JP6298152B2 - 太陽電池およびこれを用いた太陽電池モジュール - Google Patents
太陽電池およびこれを用いた太陽電池モジュール Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Description
図1〜3に示すように、太陽電池素子1は半導体基板2を有する。半導体基板2は主として入射した光を受光する受光面2aと、その受光面2aの裏側に位置する裏面2bを有する。また、太陽電池素子1には、受光面2a上に受光面側電極が設けられている。また、太陽電池素子1には、裏面2b上に裏面側電極が設けられている。
次に、太陽電池16の製造方法について説明する。
本発明の一実施形態に係る太陽電池モジュール21は、図12(a)に示すように、太陽電池モジュール21は、主として光を受ける面である第1面21aを有し、図12(b)に示すように、第1面21aの裏面に相当する第2面21bを有する。また太陽電池モジュール21は、図12(a)、(b)に示すように、複数の太陽電池16を有する太陽電池パネル22と、この太陽電池パネル22の外周部に配置されたフレーム23とを有して、第2面21b側に端子箱24等をさらに有している。端子箱24には、太陽電池モジュール21により発生した電力を外部回路に供給するための出力ケーブル25が接続されている。
2:半導体基板
2a:受光面
2b:裏面
2p:第1半導体部
2n:第2半導体部
3:バスバー電極
4:集電電極
5:補助集電電極
6:パッシベーション層
7:第1電極
7a:第1側面
7b:第2側面
8:第2電極
8a:第1部分
8b:第2部分
9:第3電極
10:補助集電電極
11:間隙
12:スペーサ部材(当接部材)
13:反射防止膜
14:BSF層
15、15a、15b:リード部材
16:太陽電池
17:フィレット
18:半田層
19:第4電極
20a〜20c:導電ペースト
21:太陽電池モジュール
21a:第1面
21b:第2面
22:太陽電池パネル
23:フレーム
24:端子箱
25:出力ケーブル
31:透光性基板
32:表面側充填材
33:裏面側充填材
34:裏面材
35:横方向配線
36:外部導出配線
Claims (9)
- 主面を有する半導体基板と、
表面および側面を有し、前記半導体基板の主面上に、一方向に並んで配置された複数の第1電極と、
前記第1電極間の間隙に位置する、前記半導体基板の主面上に配置されたパッシベーション層と、
複数の前記第1電極の表面上に配置された導電性接着剤と、
前記パッシベーション層を跨ぐように、隣り合う前記第1電極に前記導電性接着剤を介して接続されたリード部材と、
前記間隙に位置して前記一方向に前記パッシベーション層と並んで前記半導体基板の主面上または前記パッシベーション層の表面上に配置されて、前記リード部材の一部に下から当接している、前記第1電極の高さよりも高い当接部材とを備え、
前記導電性接着剤は半田からなり、前記当接部材は主成分としてアルミニウムを含有している、太陽電池。 - 前記半導体基板の主面上の前記第1電極の並びに沿った両側に配置されて、複数の前記第1電極の側面にそれぞれ接続された2つの第2電極をさらに備え、
前記当接部材は、導電性を有しており、前記間隙において2つの前記第2電極を接続している、請求項1に記載の太陽電池。 - 前記半導体基板の主面上に配置され、前記第2電極に接続されて外側に引き出された第3電極をさらに備える、請求項2に記載の太陽電池。
- 前記第3電極は、前記半導体基板の主面上において格子状のパターンを構成している、請求項3に記載の太陽電池。
- 前記第2電極、前記第3電極および前記当接部材は、同じ導電性材料からなる、請求項3または請求項4に記載の太陽電池。
- 前記間隙において隣り合う前記第1電極を結ぶように前記パッシベーション層および前記当接部材の非形成領域を有しており、該非形成領域に、隣り合う前記複数の第1電極同士に接続された第4電極をさらに備える、請求項1乃至請求項5のいずれかに記載の太陽電池。
- 前記間隙において隣り合う前記第1電極を結ぶように前記パッシベーション層の非形成領域を有しており、該非形成領域に、隣り合う前記第1電極同士および前記当接部材に接続された第4電極をさらに備える、請求項2乃至請求項5のいずれかに記載の太陽電池。
- 前記当接部材の一部は、前記第4電極上に位置している、請求項7に記載の太陽電池。
- 請求項1乃至請求項8のいずれかに記載の太陽電池の複数を並べて電気的に接続した太陽電池パネルを備えた太陽電池モジュール。
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JP2001044459A (ja) * | 1999-07-29 | 2001-02-16 | Kyocera Corp | 太陽電池 |
US7494607B2 (en) * | 2005-04-14 | 2009-02-24 | E.I. Du Pont De Nemours And Company | Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom |
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