WO2011105169A1 - Dispositif de conversion photoélectrique - Google Patents

Dispositif de conversion photoélectrique Download PDF

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Publication number
WO2011105169A1
WO2011105169A1 PCT/JP2011/051780 JP2011051780W WO2011105169A1 WO 2011105169 A1 WO2011105169 A1 WO 2011105169A1 JP 2011051780 W JP2011051780 W JP 2011051780W WO 2011105169 A1 WO2011105169 A1 WO 2011105169A1
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Prior art keywords
photoelectric conversion
slit
conversion device
width
substrate
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PCT/JP2011/051780
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English (en)
Japanese (ja)
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和司 石木
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三洋電機株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
    • H01L31/03685—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table including microcrystalline silicon, uc-Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • the present invention relates to a photoelectric conversion device.
  • a photoelectric conversion device using polycrystalline, microcrystalline, or amorphous silicon is known.
  • a photoelectric conversion device having a structure in which thin films of microcrystalline or amorphous silicon are stacked has attracted attention from the viewpoint of resources, cost reduction, and efficiency.
  • FIG. 9 schematically shows a top view and a cross-sectional view of the basic configuration of the photoelectric conversion device 200 as disclosed in Patent Document 1 of the related art.
  • the photoelectric conversion device 200 generally has a structure in which a transparent electrode 12, a photoelectric conversion layer 14, and a back electrode 16 are laminated on a transparent substrate 10 made of glass or the like. generate.
  • the photoelectric conversion device 200 is formed by laminating the transparent electrode 12, the photoelectric conversion layer 14, and the back electrode layer 16 in this order on the transparent substrate 10.
  • Examples of the photoelectric conversion layer 14 include an amorphous silicon (a-Si) photoelectric conversion layer, a microcrystalline ( ⁇ c-Si) photoelectric conversion layer, or a tandem structure thereof.
  • the stacked body is formed so as to be a power generation region by connecting the photoelectric conversion elements 20... Adjacent in the Y direction in series. And the electric power generation area
  • the photoelectric conversion device 200 is formed by sequentially laminating the photoelectric conversion layer 14 and the back electrode 16 on the transparent electrode 12 including the slits S1 and S2 formed on the main surface of the transparent substrate 10. And slit S5 was formed so that it might overlap with slit S2 by laser processing, and between adjacent photoelectric conversion elements 20 and 20 was electrically separated. At this time, the slits S5 are provided at regular intervals, and the photoelectric conversion element array 221 having a constant width is formed. That is, the width of the photoelectric conversion element rows 221 is set so that all n + 1 photoelectric conversion element rows 221 have the same width when n slits S5 are formed in the power generation region. A reverse voltage is applied to the photoelectric conversion element array 221 in order to improve the output. By applying the reverse voltage, defects such as defects or pinholes included in the photoelectric conversion layer 14 or leaked portions in the photoelectric conversion device 200 can be removed.
  • the moisture when moisture enters from the periphery of the transparent substrate 10, the moisture easily enters the slit S5 located at the end of the power generation region, and the photoelectric conversion layer 14 exposed through the slit S5 There has been a problem that moisture enters the interface such as the back electrode 16 and the film peels off.
  • An object of the present invention is to provide a photoelectric conversion device having improved weather resistance as compared with the conventional photoelectric conversion device described above.
  • a photoelectric conversion device forms a power generation region including a structure in which a first electrode, a photoelectric conversion layer, and a second electrode are sequentially stacked on a substrate.
  • a photoelectric conversion device in which a power generation region is divided into n + 1 power generation regions by n slits (n is 2 or more), and compared to the width of each photoelectric region when the power generation region is divided equally, at the end of the substrate The width of the photoelectric conversion region located is set to be wide.
  • a photoelectric conversion device with improved weather resistance can be provided.
  • 1 to 7 show a manufacturing process of the photoelectric conversion device 100 in the present embodiment.
  • 1 to 7 schematically show a top view and a cross-sectional view in each step of the manufacturing process of the photoelectric conversion device 100.
  • FIG. 1 to 7 schematically show a top view and a cross-sectional view in each step of the manufacturing process of the photoelectric conversion device 100.
  • the transparent electrode 12 is formed on the transparent substrate 10 as shown in FIG.
  • the transparent substrate 10 transmits light having a wavelength used for photoelectric conversion by the photoelectric conversion device and has an insulating surface.
  • glass, plastic, or the like can be used as the transparent substrate 10.
  • the transparent electrode 12 transmits light having a wavelength that the photoelectric conversion device uses for photoelectric conversion, and has conductivity.
  • transparent conductivity obtained by doping tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (ITO), etc. with tin (Sn), antimony (Sb), fluorine (F), aluminum (Al), etc.
  • An oxide (TCO) can be used.
  • a slit S1 extending in the X direction and a slit S2 extending in the Y direction are formed. That is, the transparent electrode 12 is formed in a strip shape by the slit S1, and the five slits S2 are formed to divide the transparent electrode 12 into six regions.
  • the width Ha of the transparent electrode region 12a (12f) located at the edge of the substrate is larger than the width h of the six transparent electrode regions 212 formed by providing five slits S2 at equal intervals in the X direction.
  • the transparent electrode region 12c (12d) located at the center of the substrate is divided so that the width Hc is narrow. That is, the width of the transparent electrode region is set such that Ha> h> Hc.
  • the slits S1 and S2 are formed to have a depth up to the surface of the transparent substrate 10.
  • a YAG laser (fundamental wave) having a wavelength of 1064 nm as the laser device for forming the slits S1 and S2. Formed by adjusting the power of the laser beam emitted from the laser device and irradiating the surface of the transparent electrode 12 opposite to the surface adjacent to the transparent substrate 10 so as to be focused on the surface of the transparent electrode 12 and scanning. can do.
  • the photoelectric conversion layer 14 is formed so as to cover the transparent electrode 12, as shown in FIG.
  • the photoelectric conversion layer 14 is not particularly limited, and examples thereof include an amorphous silicon (a-Si) photoelectric conversion layer, a microcrystalline ( ⁇ c-Si) photoelectric conversion layer, and a tandem structure thereof.
  • the photoelectric conversion layer 14 can be formed using plasma CVD or the like.
  • step S14 the photoelectric conversion layer 14 is removed using a laser to form a slit S3 extending in the X direction.
  • the slit S3 is formed to have a depth up to the surface of the transparent electrode 12 so as to divide the photoelectric conversion layer 14.
  • the slit S3 can be formed by adjusting the power of the laser beam emitted from the laser device, irradiating from the transparent substrate 10 side, and scanning.
  • the back electrode 16 is formed so as to cover the photoelectric conversion layer 14.
  • the back electrode 16 is preferably a reflective metal.
  • a stacked structure of a reflective metal and a transparent conductive oxide (TCO) is also preferable.
  • silver (Ag), aluminum (Al), or the like can be used as the reflective metal.
  • the transparent conductive oxide film (TCO) tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (ITO), or the like can be used.
  • step S18 the photoelectric conversion layer 14 and the back electrode 16 are removed using a laser to form a slit S4 extending in the X direction.
  • the slit S4 is provided on the opposite side of the slit S1 in the Y direction when the slit S3 is used as a reference.
  • the slit S4 is formed to have a depth up to the interface with the transparent electrode 12 so as to divide the photoelectric conversion layer 14 and the back electrode 16. Thereby, it becomes the shape where multiple photoelectric conversion elements 20 ... which consist of the transparent electrode 12, the photoelectric converting layer 14, and the back surface electrode 16 were connected in series.
  • the slit S4 can be formed by adjusting the power of the laser beam emitted from the laser device, irradiating from the transparent substrate 10 side, and scanning.
  • step S20 as shown in FIG. 6, five slits S5 extending in the Y direction are formed by removing the photoelectric conversion layer 14 and the back electrode 16 using a laser. That is, the slit S5 that overlaps the slit S2 so as to divide the power generation region in which the photoelectric conversion elements 20 formed of the transparent electrode 12, the photoelectric conversion layer 14, and the back electrode 16 are connected in series into a plurality of regions 21a to 21f.
  • the slit S5 is formed to have a depth up to the interface between the photoelectric conversion layer 14 and the transparent substrate 10. Since the slit S5 overlaps the slit S2, the width relationship of the transparent electrode region where Ha> h> Hc is not changed.
  • a YAG laser (fundamental wave) with a wavelength of 1064 nm as the laser device for forming the slit S5. It can be formed by adjusting the power of the laser beam emitted from the laser device so as to be focused on the surface of the transparent electrode 12 from the transparent substrate 10 side and scanning the slit S5.
  • the photoelectric conversion device arrays 21a to 21f including the power generation region are arranged in parallel, and the photoelectric conversion device 100 connected in parallel is configured.
  • step S22 as shown in FIG. 7, a reverse voltage opposite to the photovoltaic force generated in each photoelectric conversion layer 14 is probed between adjacent photoelectric conversion elements 20. Apply by 30. At this time, the applied voltage is about 6V. By applying this reverse voltage, a low resistance portion such as a defect or a pinhole included in the photoelectric conversion layer 14 or a leaked portion in the photoelectric conversion device 100 can be evaporated and removed.
  • the width of the transparent electrode is Ha> h
  • the width of the photoelectric conversion element array 21a (21f) located at the end of the substrate is larger than the width of the photoelectric conversion element array 21 of the prior art.
  • interlayer refers to an interlayer between the photoelectric conversion layer 14 and the back electrode 16 or a back electrode 16 composed of a plurality of layers. It means the layer between the conductive film.
  • the width of the transparent electrode is set as Hc ⁇ h so that the width of the photoelectric conversion element array 21c (21d) located at the center of the substrate is narrower than the width of the photoelectric conversion element array 221 of the prior art. That is, when reverse voltages of the same magnitude are applied to the photoelectric conversion element array 221 and the photoelectric conversion element array 21c, the photoelectric conversion element array 21c (21d) having a narrower width than the photoelectric conversion element array 221 is per unit area.
  • the current applied to is increased. As a result, a larger current flows through a low resistance portion such as a defect or a pinhole included in the photoelectric conversion layer 14 or a defective portion such as a leak portion in the photoelectric conversion device 100. As a result, the amount of heat generated in a low resistance portion such as a defect or a pinhole, or a defective portion such as a leak portion increases, and the defective portion can be evaporated and better removed.
  • the photoelectric conversion element array 21a (21f) located at the edge of the substrate current is less likely to concentrate than in the central portion of the substrate, so that a defective portion that greatly affects the output of the photoelectric conversion device 100 is removed, Removal of a defective portion having little influence on the output of the photoelectric conversion device 100 is not performed.
  • This suppresses the formation of holes formed in the photoelectric conversion element array 21a (21f) located at the edge of the substrate by applying a reverse voltage to evaporate the defective portion. Therefore, it is possible to suppress moisture from entering from the hole and to suppress peeling of the film caused by moisture entering between the photoelectric conversion layer 14 and the back electrode 16. As a result, the weather resistance of the photoelectric conversion device 100 can be improved, and a decrease in conversion efficiency can be suppressed.
  • step S12 in the case of a tandem structure including a plurality of amorphous silicon (a-Si) photoelectric conversion layers and microcrystalline ( ⁇ c-Si) photoelectric conversion layers, a structure having an intermediate layer It is good.
  • a structure having an intermediate layer tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (ITO) or the like is doped with tin (Sn), antimony (Sb), fluorine (F), aluminum (Al), or the like.
  • a transparent conductive oxide (TCO) may be used.
  • step S20 a step of removing the outer peripheral portion of the photoelectric conversion device 100 may be provided.
  • a step of forming a back sheet or a resin layer for protecting the surface of the photoelectric conversion device 100 may be provided after step S22.
  • the width in the CC cross section in the X direction is narrower in the slit S5 than in the slit S2, and the slit S5 is formed in the slit S2.
  • the slit S2 may be formed in the slit S5 such that the width in the cross section CC in the X direction is wider than the slit S2.
  • the interlayer that can obtain the effect (1) includes the interlayer between the transparent electrode 12 and the photoelectric conversion layer 14 in addition to the interlayer in the above embodiment.
  • the present invention can be used for a photoelectric conversion device.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
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Abstract

L'invention porte sur un dispositif de conversion photoélectrique qui présente une résistance aux intempéries améliorée. Dans le dispositif de conversion photoélectrique (100), une région de génération de puissance est formée, ladite région de génération de puissance comprenant une structure dans laquelle une première électrode (12), une couche de conversion photoélectrique (14) et une seconde électrode (16) sont successivement stratifiées sur un substrat (10), et la région de génération de puissance est divisée en six colonnes d'éléments de conversion photoélectrique (21) au moyen de cinq fentes (S5). La largeur d'une colonne d'éléments de conversion photoélectrique (21a(21f)) placée au niveau de la partie d'extrémité du substrat est configurée plus grande que la largeur (H) de chaque colonne d'éléments de conversion photoélectrique (221) lorsque la région de génération de puissance est divisée de façon égale.
PCT/JP2011/051780 2010-02-26 2011-01-28 Dispositif de conversion photoélectrique WO2011105169A1 (fr)

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JP2010041483A JP2011181543A (ja) 2010-02-26 2010-02-26 光電変換装置
JP2010-041483 2010-02-26

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EP3435424A1 (fr) * 2017-07-27 2019-01-30 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Panneau photovoltaïque et son procédé de fabrication

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JPS5984478A (ja) * 1982-11-04 1984-05-16 Matsushita Electric Ind Co Ltd 太陽電池モジユ−ル
JPS6190474A (ja) * 1984-10-09 1986-05-08 Sanyo Electric Co Ltd 光起電力装置
JPS63112357U (fr) * 1987-01-16 1988-07-19
JP2000349326A (ja) * 1999-06-07 2000-12-15 Kanegafuchi Chem Ind Co Ltd 太陽電池モジュール
JP2002373997A (ja) * 2001-04-10 2002-12-26 Kanegafuchi Chem Ind Co Ltd 集積型ハイブリッド薄膜光電変換モジュール
WO2007004501A1 (fr) * 2005-07-01 2007-01-11 Honda Motor Co., Ltd. Module de cellules solaires
WO2010079769A1 (fr) * 2009-01-09 2010-07-15 シャープ株式会社 Module de cellules solaires à couche mince et matrice de cellules solaires à couche mince
WO2011030729A1 (fr) * 2009-09-08 2011-03-17 株式会社アルバック Module de cellules solaires

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5984478A (ja) * 1982-11-04 1984-05-16 Matsushita Electric Ind Co Ltd 太陽電池モジユ−ル
JPS6190474A (ja) * 1984-10-09 1986-05-08 Sanyo Electric Co Ltd 光起電力装置
JPS63112357U (fr) * 1987-01-16 1988-07-19
JP2000349326A (ja) * 1999-06-07 2000-12-15 Kanegafuchi Chem Ind Co Ltd 太陽電池モジュール
JP2002373997A (ja) * 2001-04-10 2002-12-26 Kanegafuchi Chem Ind Co Ltd 集積型ハイブリッド薄膜光電変換モジュール
WO2007004501A1 (fr) * 2005-07-01 2007-01-11 Honda Motor Co., Ltd. Module de cellules solaires
WO2010079769A1 (fr) * 2009-01-09 2010-07-15 シャープ株式会社 Module de cellules solaires à couche mince et matrice de cellules solaires à couche mince
WO2011030729A1 (fr) * 2009-09-08 2011-03-17 株式会社アルバック Module de cellules solaires

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