JP2015103793A - 高光透過性薄膜太陽電池パネル - Google Patents
高光透過性薄膜太陽電池パネル Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 27
- 230000003287 optical effect Effects 0.000 title abstract 3
- 230000031700 light absorption Effects 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims 1
- 238000002834 transmittance Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004566 building material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022491—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of a thin transparent metal layer, e.g. gold
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0468—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising specific means for obtaining partial light transmission through the module, e.g. partially transparent thin film solar modules for windows
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
10 第1の分割線
11 透明基板
12 第2の分割線
13 前面電極層
15 光吸収層
17 背面電極層
20 第1の溝部
21 第1の開口パターン
23 第2の開口パターン
25 第3の開口パターン
27 第4の開口パターン
30 第2の溝部
31 第5の開口パターン
33 第6の開口パターン
40 第3の溝部
41 第7の開口パターン
43 第8の開口パターン
45 第9の開口パターン
50 下部開口パターン
A 第1の方向
B 第2の方向
C1 領域
C2 領域
C3 領域
C4 領域
D 周期
M 振幅
Claims (8)
- 入光方向から順番に、透明基板、前面電極層、光吸収層及び背面電極層を備える高光透過性薄膜太陽電池パネルであって、
前記前面電極層は、前記透明基板上に形成され、前記前面電極層上には、少なくとも1つの第1の開口パターン及び複数の第7の開口パターンが形成され、前記少なくとも1つの開口パターンは、第1の方向に連続して延設されることにより、少なくとも1つの第1の分割線を形成し、
前記光吸収層は、前記前面電極層上に形成される上、前記少なくとも1つの第1の分割線を被覆し、少なくとも1つの第2の開口パターン、少なくとも1つの第3の開口パターン、複数の第5の開口パターン及び複数の第8の開口パターンを有し、前記少なくとも1つの第2の開口パターン及び前記少なくとも1つの第3の開口パターンは、前記少なくとも1つの第1の開口パターンに平行する上、前記第1の方向に連続して延設され、前記少なくとも1つの第2の開口パターンは、少なくとも1つの第2の分割線を形成し、
前記背面電極層は、前記光吸収層上に形成される上、前記少なくとも1つの第2の分割線を被覆し、少なくとも1つの第4の開口パターン、複数の第6の開口パターン及び複数の第9の開口パターンを有し、前記少なくとも1つの第4の開口パターンは、前記第1の方向に延設され、前記少なくとも1つの第4の開口パターン及び前記少なくとも1つの第3の開口パターンは、幅が同一である上、位置が重なることにより、前記第1の方向上に少なくとも1つの第1の溝部を形成し、
前記複数の第5の開口パターン及び前記複数の第6の開口パターンは、幅が同一である上、位置が重なることにより、複数の第2の溝部を形成し、前記複数の第2の溝部は、所定周期で連続する波形曲線であり、前記複数の第2の溝部の波形曲線が前進する方向は、前記第1の方向と直交する第2の方向であり、前記所定周期で連続する波形曲線の振幅は、10μm〜10mmであり、周期は、5μm〜500mmであり、前記複数の第2の溝部間は、互いに平行であり、前記波形曲線の位相は、同一、偏移又は逆であり、
前記複数の第7の開口パターン、前記複数の第8の開口パターン及び前記複数の第9の開口パターンは、幅が同一である上、位置が重なり、連続して延設されることにより、複数の第3の溝部を形成し、前記複数の第3の溝部は、前記第2の方向上に延設又は前進し、前記複数の第2の溝部と平行、重複又は交差し、
前記少なくとも1つの第1の溝部、前記複数の第2の溝部及び前記複数の第3の溝部により、前記光吸収層は、複数のブロックに分割されることを特徴とする高光透過性薄膜太陽電池パネル。 - 前記複数の第3の溝部の少なくとも1つは、直線であることを特徴とする請求項1に記載の高光透過性薄膜太陽電池パネル。
- 前記複数の第3の溝部の少なくとも1つは、所定周期で連続する波形曲線であり、その振幅は、10μm〜10mmであり、周期は、5μm〜500mmであることを特徴とする請求項3に記載の高光透過性薄膜太陽電池パネル。
- 前記複数の第2の溝部と前記複数の第3の溝部とが重複又は交差する場合、前記複数の第7の開口パターンの幅は、前記複数の第5の開口パターン及び前記複数の第6の開口パターンの幅より小さいことを特徴とする請求項1に記載の高光透過性薄膜太陽電池パネル。
- 前記複数の第2の溝部と前記複数の第3の溝部とが重複又は交差する場合、前記複数の第7の開口パターンの幅は、前記複数の第5の開口パターン及び前記複数の第6の開口パターンの幅と同一であることを特徴とする請求項1に記載の高光透過性薄膜太陽電池パネル。
- 前記複数の第2の溝部と前記複数の第3の溝部とが重複又は交差する場合、前記複数の第7の開口パターンの幅は、前記複数の第5の開口パターン及び前記複数の第6の開口パターンより大きいが、前記複数の第7の開口パターンの側壁に前記光吸収層が形成されることにより、実際に形成される複数の下部開口パターンの幅は、前記複数の第5の開口パターン及び前記複数の第6の開口パターンと同一であることを特徴とする請求項1に記載の高光透過性薄膜太陽電池パネル。
- 前記透明基板は、無アルカリガラス、石英ガラス又はアクリルからなり、前記前面電極層は、透明導電材料からなり、前記光吸収層は、単結晶シリコン、多結晶シリコン、非結晶シリコン、微結晶シリコン、CIGS薄膜及びCIGSS薄膜中の少なくとも1つであり、前記背面電極層は、前記透明導電材料及び/又は金属材料であることを特徴とする請求項1に記載の高光透過性薄膜太陽電池パネル。
- 前記透明電極材料は、ITO及びアルミニウム−亜鉛酸化物中の少なくとも1つであり、前記金属材料は、モリブデン、銀及びニッケル中の少なくとも1つであることを特徴とする請求項7に記載の高光透過性薄膜太陽電池パネル。
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TW102142876 | 2013-11-25 | ||
TW102142876A TWI459574B (zh) | 2013-11-25 | 2013-11-25 | High transmittance thin film solar panels |
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JP2015103793A true JP2015103793A (ja) | 2015-06-04 |
JP5746748B2 JP5746748B2 (ja) | 2015-07-08 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006245507A (ja) * | 2005-03-07 | 2006-09-14 | Sharp Corp | 薄膜太陽電池およびその製造方法 |
JP2010272871A (ja) * | 2009-05-21 | 2010-12-02 | Wuxi Suntech Power Co Ltd | 透光性薄膜太陽電池モジュール |
WO2012035780A1 (ja) * | 2010-09-16 | 2012-03-22 | 三洋電機株式会社 | 光電変換装置 |
JP5220204B2 (ja) * | 2009-11-17 | 2013-06-26 | 三菱電機株式会社 | 薄膜太陽電池およびその製造方法 |
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TWI382557B (zh) * | 2008-11-14 | 2013-01-11 | Nexpower Technology Corp | 薄膜太陽能電池之穿透孔製作方法 |
TWI424576B (zh) * | 2010-04-30 | 2014-01-21 | Axuntek Solar Energy | 穿透式太陽能電池模組及其製造方法 |
KR20120096339A (ko) * | 2011-02-22 | 2012-08-30 | 엘지전자 주식회사 | 박막형 태양전지 모듈 및 그 제조방법 |
TW201248876A (en) * | 2011-05-17 | 2012-12-01 | Axuntek Solar Energy | See-through solar battery module and manufacturing method thereof |
EP2834847B1 (en) * | 2012-04-03 | 2021-06-02 | Flisom AG | Thin-film photovoltaic device with wavy monolithic interconnects |
-
2013
- 2013-11-25 TW TW102142876A patent/TWI459574B/zh not_active IP Right Cessation
- 2013-12-28 JP JP2013273700A patent/JP5746748B2/ja not_active Expired - Fee Related
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- 2014-07-30 US US14/446,405 patent/US9553218B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006245507A (ja) * | 2005-03-07 | 2006-09-14 | Sharp Corp | 薄膜太陽電池およびその製造方法 |
JP2010272871A (ja) * | 2009-05-21 | 2010-12-02 | Wuxi Suntech Power Co Ltd | 透光性薄膜太陽電池モジュール |
JP5220204B2 (ja) * | 2009-11-17 | 2013-06-26 | 三菱電機株式会社 | 薄膜太陽電池およびその製造方法 |
WO2012035780A1 (ja) * | 2010-09-16 | 2012-03-22 | 三洋電機株式会社 | 光電変換装置 |
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JP5746748B2 (ja) | 2015-07-08 |
US20150136222A1 (en) | 2015-05-21 |
TW201521211A (zh) | 2015-06-01 |
US9553218B2 (en) | 2017-01-24 |
TWI459574B (zh) | 2014-11-01 |
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