WO2011096142A1 - 水素製造装置および水素製造方法 - Google Patents
水素製造装置および水素製造方法 Download PDFInfo
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- WO2011096142A1 WO2011096142A1 PCT/JP2010/072899 JP2010072899W WO2011096142A1 WO 2011096142 A1 WO2011096142 A1 WO 2011096142A1 JP 2010072899 W JP2010072899 W JP 2010072899W WO 2011096142 A1 WO2011096142 A1 WO 2011096142A1
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- photoelectric conversion
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- 239000001257 hydrogen Substances 0.000 title claims abstract description 291
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 291
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 282
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 129
- 239000007789 gas Substances 0.000 claims abstract description 435
- 238000006243 chemical reaction Methods 0.000 claims abstract description 350
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 129
- 239000001301 oxygen Substances 0.000 claims abstract description 129
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 129
- 239000008151 electrolyte solution Substances 0.000 claims abstract description 71
- 239000004065 semiconductor Substances 0.000 claims description 82
- 239000003054 catalyst Substances 0.000 claims description 77
- 239000000758 substrate Substances 0.000 claims description 63
- 238000005192 partition Methods 0.000 claims description 49
- 239000004020 conductor Substances 0.000 claims description 17
- 238000005260 corrosion Methods 0.000 claims description 11
- 230000007797 corrosion Effects 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 10
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims 1
- 230000007423 decrease Effects 0.000 abstract description 12
- 238000000034 method Methods 0.000 description 57
- 239000003792 electrolyte Substances 0.000 description 50
- 239000000463 material Substances 0.000 description 47
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 35
- 239000010408 film Substances 0.000 description 33
- 239000000975 dye Substances 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 229910052710 silicon Inorganic materials 0.000 description 25
- 239000010703 silicon Substances 0.000 description 25
- 150000001875 compounds Chemical class 0.000 description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 21
- -1 SiC Chemical class 0.000 description 19
- 239000012528 membrane Substances 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 239000010409 thin film Substances 0.000 description 16
- 229920005989 resin Polymers 0.000 description 13
- 239000011347 resin Substances 0.000 description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- 229910052697 platinum Inorganic materials 0.000 description 12
- 239000003566 sealing material Substances 0.000 description 12
- 229920001940 conductive polymer Polymers 0.000 description 11
- 229910021419 crystalline silicon Inorganic materials 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 11
- 239000011521 glass Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000000446 fuel Substances 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 150000002431 hydrogen Chemical class 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229920001721 polyimide Polymers 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 229920001577 copolymer Polymers 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 6
- 229910006404 SnO 2 Inorganic materials 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 229910010272 inorganic material Inorganic materials 0.000 description 6
- 239000011147 inorganic material Substances 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 229920001187 thermosetting polymer Polymers 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 239000002861 polymer material Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 238000006722 reduction reaction Methods 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000006303 photolysis reaction Methods 0.000 description 4
- 230000015843 photosynthesis, light reaction Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 239000008057 potassium phosphate buffer Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000003980 solgel method Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 239000004693 Polybenzimidazole Substances 0.000 description 3
- 229910020923 Sn-O Inorganic materials 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 229910007541 Zn O Inorganic materials 0.000 description 3
- 229910007604 Zn—Sn—O Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000003011 anion exchange membrane Substances 0.000 description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 239000003575 carbonaceous material Substances 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005868 electrolysis reaction Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 239000011630 iodine Substances 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910003465 moissanite Inorganic materials 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000011941 photocatalyst Substances 0.000 description 3
- 229920002480 polybenzimidazole Polymers 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000010944 silver (metal) Substances 0.000 description 3
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 3
- 239000013589 supplement Substances 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 239000004114 Ammonium polyphosphate Substances 0.000 description 2
- 239000002028 Biomass Substances 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 108090000790 Enzymes Proteins 0.000 description 2
- 102000004190 Enzymes Human genes 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 239000002841 Lewis acid Substances 0.000 description 2
- 239000002879 Lewis base Substances 0.000 description 2
- 229920000265 Polyparaphenylene Polymers 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 235000019826 ammonium polyphosphate Nutrition 0.000 description 2
- 229920001276 ammonium polyphosphate Polymers 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 238000005341 cation exchange Methods 0.000 description 2
- 238000010538 cationic polymerization reaction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 238000004817 gas chromatography Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 239000003014 ion exchange membrane Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910000457 iridium oxide Inorganic materials 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 150000007517 lewis acids Chemical class 0.000 description 2
- 150000007527 lewis bases Chemical class 0.000 description 2
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 2
- 229920001197 polyacetylene Polymers 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920002098 polyfluorene Polymers 0.000 description 2
- 239000005518 polymer electrolyte Substances 0.000 description 2
- 229920005597 polymer membrane Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229920000128 polypyrrole Polymers 0.000 description 2
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 239000005373 porous glass Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000006479 redox reaction Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 239000004634 thermosetting polymer Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical compound [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 1
- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 description 1
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- XHZPRMZZQOIPDS-UHFFFAOYSA-N 2-Methyl-2-[(1-oxo-2-propenyl)amino]-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(C)(C)NC(=O)C=C XHZPRMZZQOIPDS-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- IWTYTFSSTWXZFU-UHFFFAOYSA-N 3-chloroprop-1-enylbenzene Chemical compound ClCC=CC1=CC=CC=C1 IWTYTFSSTWXZFU-UHFFFAOYSA-N 0.000 description 1
- SOSAUKRKGXFQKS-UHFFFAOYSA-N 4,5-dimethyl-2-propyl-1H-imidazole hydroiodide Chemical compound I.CCCC1=NC(C)=C(C)N1 SOSAUKRKGXFQKS-UHFFFAOYSA-N 0.000 description 1
- 229920003934 Aciplex® Polymers 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017008 AsF 6 Inorganic materials 0.000 description 1
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical compound N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 241000195493 Cryptophyta Species 0.000 description 1
- 229910017813 Cu—Cr Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229920003935 Flemion® Polymers 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical group [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 108010020056 Hydrogenase Proteins 0.000 description 1
- 235000000177 Indigofera tinctoria Nutrition 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- 229920000557 Nafion® Polymers 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 108010060806 Photosystem II Protein Complex Proteins 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 239000012327 Ruthenium complex Substances 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910003086 Ti–Pt Inorganic materials 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- QVYYOKWPCQYKEY-UHFFFAOYSA-N [Fe].[Co] Chemical compound [Fe].[Co] QVYYOKWPCQYKEY-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000006230 acetylene black Substances 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910000074 antimony hydride Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 239000000987 azo dye Substances 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000010170 biological method Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 239000002134 carbon nanofiber Substances 0.000 description 1
- 150000001244 carboxylic acid anhydrides Chemical group 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910001567 cementite Inorganic materials 0.000 description 1
- MEAHOQPOZNHISZ-UHFFFAOYSA-M cesium;hydrogen sulfate Chemical compound [Cs+].OS([O-])(=O)=O MEAHOQPOZNHISZ-UHFFFAOYSA-M 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- GVEHJMMRQRRJPM-UHFFFAOYSA-N chromium(2+);methanidylidynechromium Chemical compound [Cr+2].[Cr]#[C-].[Cr]#[C-] GVEHJMMRQRRJPM-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- UFMZWBIQTDUYBN-UHFFFAOYSA-N cobalt dinitrate Chemical compound [Co+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O UFMZWBIQTDUYBN-UHFFFAOYSA-N 0.000 description 1
- 229910001981 cobalt nitrate Inorganic materials 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- 229910000152 cobalt phosphate Inorganic materials 0.000 description 1
- ZBDSFTZNNQNSQM-UHFFFAOYSA-H cobalt(2+);diphosphate Chemical compound [Co+2].[Co+2].[Co+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O ZBDSFTZNNQNSQM-UHFFFAOYSA-H 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 229920001795 coordination polymer Polymers 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- UQSQSQZYBQSBJZ-UHFFFAOYSA-N fluorosulfonic acid Chemical compound OS(F)(=O)=O UQSQSQZYBQSBJZ-UHFFFAOYSA-N 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000006232 furnace black Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229940097275 indigo Drugs 0.000 description 1
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000003273 ketjen black Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- DZVCFNFOPIZQKX-LTHRDKTGSA-M merocyanine Chemical compound [Na+].O=C1N(CCCC)C(=O)N(CCCC)C(=O)C1=C\C=C\C=C/1N(CCCS([O-])(=O)=O)C2=CC=CC=C2O\1 DZVCFNFOPIZQKX-LTHRDKTGSA-M 0.000 description 1
- 230000004060 metabolic process Effects 0.000 description 1
- 229910001511 metal iodide Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 244000005700 microbiome Species 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000002116 nanohorn Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- LKKPNUDVOYAOBB-UHFFFAOYSA-N naphthalocyanine Chemical compound N1C(N=C2C3=CC4=CC=CC=C4C=C3C(N=C3C4=CC5=CC=CC=C5C=C4C(=N4)N3)=N2)=C(C=C2C(C=CC=C2)=C2)C2=C1N=C1C2=CC3=CC=CC=C3C=C2C4=N1 LKKPNUDVOYAOBB-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 1
- AHHWIHXENZJRFG-UHFFFAOYSA-N oxetane Chemical compound C1COC1 AHHWIHXENZJRFG-UHFFFAOYSA-N 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000005365 phosphate glass Substances 0.000 description 1
- 125000005499 phosphonyl group Chemical group 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000001007 phthalocyanine dye Substances 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000412 polyarylene Polymers 0.000 description 1
- 229920001088 polycarbazole Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000001008 quinone-imine dye Substances 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000001932 seasonal effect Effects 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 235000009518 sodium iodide Nutrition 0.000 description 1
- 239000004449 solid propellant Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- OUULRIDHGPHMNQ-UHFFFAOYSA-N stibane Chemical compound [SbH3] OUULRIDHGPHMNQ-UHFFFAOYSA-N 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 239000003115 supporting electrolyte Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 229910003470 tongbaite Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
- 239000001018 xanthene dye Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/01—Products
- C25B1/02—Hydrogen or oxygen
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
- C01B13/02—Preparation of oxygen
- C01B13/0203—Preparation of oxygen from inorganic compounds
- C01B13/0207—Water
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
- C01B3/02—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen
- C01B3/04—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by decomposition of inorganic compounds, e.g. ammonia
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/50—Processes
- C25B1/55—Photoelectrolysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
- Y02P20/133—Renewable energy sources, e.g. sunlight
Definitions
- renewable energy In recent years, the use of renewable energy is desired from the viewpoint of depletion of fossil fuel resources and the suppression of global warming gas emissions.
- renewable energy sources such as sunlight, hydropower, wind power, geothermal power, tidal power, and biomass.
- sunlight has a large amount of available energy, and there are geographical restrictions on other renewable energy sources. Because of the relatively small amount, early development and popularization of technology that can efficiently use energy from sunlight is desired.
- Possible forms of energy generated from sunlight include electrical energy produced using solar cells and solar thermal turbines, thermal energy by collecting solar energy in a heat medium, and other types of sunlight.
- Examples include storable fuel energy such as liquid fuel and hydrogen by substance reduction.
- Many solar cell technologies and solar heat utilization technologies have already been put into practical use, but the energy utilization efficiency is still low, and the cost of producing electricity and heat is still high. Technology development is underway.
- these forms of electricity and heat can be used to supplement short-term energy fluctuations, it is extremely difficult to supplement long-term fluctuations such as seasonal fluctuations, It is a problem that there is a possibility that the operating rate of the power generation equipment may be reduced due to the increase in power generation.
- storing energy as a substance, such as liquid fuel and hydrogen is extremely effective as a technology that efficiently supplements long-term fluctuations and increases the operating rate of power generation facilities. It is an indispensable technology to raise and reduce carbon dioxide emissions thoroughly.
- liquid fuels such as hydrocarbons
- gaseous fuels such as biogas and hydrogen
- solid pellets such as biomass-derived wood pellets and metals reduced by sunlight. It can.
- liquid fuel, gaseous fuel including hydrogen in terms of total utilization efficiency improvement with fuel cells, etc. solid fuel in terms of storability and energy density
- a hydrogen production technique by decomposing water with sunlight has attracted particular attention from the viewpoint that water that can be easily obtained as a raw material can be used.
- platinum is supported on a photocatalyst such as titanium oxide, and this substance is put in water to perform light separation in a semiconductor, and an electrolytic solution.
- the water is decomposed directly at high temperature using the photolysis method by reducing protons and oxidizing water, or by using thermal energy such as a high-temperature gas furnace, or indirectly by coupling with redox of metals, etc.
- Pyrolysis method that uses the metabolism of microorganisms that use light such as algae
- water electrolysis method that combines electricity generated by solar cells and water electrolysis hydrogen production equipment
- photoelectric conversion used in solar cells Examples of the method include a photovoltaic method in which electrons and holes obtained by photoelectric conversion are used in a reaction by a hydrogen generation catalyst and an oxygen generation catalyst by supporting a hydrogen generation catalyst and an oxygen generation catalyst on the material.
- the photolysis method the one that has the possibility of producing a small hydrogen production device by integrating the photoelectric conversion unit and the hydrogen generation unit is considered to be a photolysis method, a biological method, a photovoltaic method
- the photovoltaic method is considered to be one of the technologies closest to practical use.
- Patent Document 1 a titanium oxide photocatalyst electrode on which a ruthenium complex is adsorbed and a platinum electrode, an apparatus using oxidation reduction of iodine or iron is disclosed.
- Patent Documents 2 and 3 an integrated structure is adopted by connecting two layers of photocatalysts in tandem, connecting a platinum counter electrode, and sandwiching an ion exchange membrane therebetween.
- Non-Patent Document 1 a concept of a hydrogen production apparatus in which a photoelectric conversion unit, a hydrogen generation unit, and an oxygen generation unit are integrated has been announced (Non-Patent Document 1). According to this, charge separation is performed by using a photoelectric conversion unit, and hydrogen generation and oxygen generation are performed using corresponding catalysts.
- the photoelectric conversion part is made of a material used for solar cells. For example, in Non-Patent Document 2, after charge separation is performed with three silicon pin layers, a platinum catalyst is responsible for hydrogen generation and ruthenium oxide is responsible for oxygen generation.
- Non-Patent Document 3 a multi-junction photoelectric conversion material that absorbs light of different wavelengths is used by using Pt as a hydrogen generation catalyst and RuO 2 as an oxygen generation catalyst to achieve high efficiency.
- Patent Document 4 and Non-Patent Document 3 a hydrogen generation catalyst (NiFeO) and three layers of silicon pin are stacked in parallel on a substrate, and an oxygen generation catalyst (Co-Mo) is further formed on the silicon layer. ) To produce an integrated hydrogen production apparatus.
- the present invention includes a photoelectric conversion unit having a light receiving surface and a back surface, and a first gas generation unit and a second gas generation unit provided on the back surface, and the first gas generation unit and the second gas generation unit
- One of the gas generating units is a hydrogen generating unit that generates H 2 from the electrolytic solution, and the other is an oxygen generating unit that generates O 2 from the electrolytic solution, and the first gas generating unit and the second gas generating unit.
- At least one of the parts is plural, and the photoelectric conversion unit, the first gas generation unit, and the second gas generation unit are such that the electromotive force generated by the photoelectric conversion unit receiving light is the first gas generation unit.
- a hydrogen production apparatus characterized in that it is electrically connected so as to be supplied to the second gas generation section.
- an electromotive force can be generated in the photoelectric conversion unit by causing light to enter the light receiving surface of the photoelectric conversion unit, and the electromotive force can be generated between the first gas generation unit and the second gas generation unit. Can be output. Either one of the first gas generation unit and the second gas generation unit is brought into contact with the first gas generation unit and the second gas generation unit from which the electromotive force is output. H 2 can be generated from the electrolyte, while O 2 can be generated from the electrolyte. By recovering the generated H 2 , hydrogen can be produced.
- the hydrogen generation unit and the oxygen generation unit are provided on the back surface of the photoelectric conversion unit, light can be incident on the light receiving surface without passing through the electrolytic solution. Can be prevented. As a result, the amount of incident light to the photoelectric conversion unit can be increased, and the light use efficiency can be increased.
- the hydrogen generation unit and the oxygen generation unit are provided on the back surface of the photoelectric conversion unit, the light incident on the light receiving surface is generated by the hydrogen generation unit and the oxygen generation unit, and the hydrogen and It is not absorbed or scattered by oxygen. As a result, the amount of incident light to the photoelectric conversion unit can be increased, and the light use efficiency can be increased.
- the portion where the first gas generating unit and the second gas generating unit are adjacent to each other is increased, and the gap between the electrolyte near the first gas generating unit and the electrolyte near the second gas generating unit is increased.
- Proton ion conduction distance can be shortened.
- the number of proton conduction paths of the electrolyte solution or ion exchanger through which protons conduct ions can be increased, and the ratio of proton conduction regions can be increased.
- the concentration of the conductive proton can be reduced. This facilitates movement of protons in the electrolyte solution in the vicinity of the first gas generation part and the electrolyte solution in the vicinity of the second gas generation part, and the proton concentration imbalance can be reduced.
- FIG. 10 is a schematic sectional view taken along a dotted line BB in FIG. 9. It is a schematic sectional drawing which shows the structure of the hydrogen production apparatus of one Embodiment of this invention. It is a schematic sectional drawing which shows the structure of the hydrogen production apparatus of the reference form of this invention. It is a schematic sectional drawing which shows the structure of the hydrogen production apparatus of the reference form of this invention. It is a schematic sectional drawing which shows the structure of the hydrogen production apparatus of one Embodiment of this invention.
- the hydrogen production apparatus of the present invention includes a photoelectric conversion unit having a light receiving surface and a back surface, and a first gas generation unit and a second gas generation unit provided on the back surface, the first gas generation unit And the second gas generating part, one is a hydrogen generating part for generating H 2 from the electrolytic solution, and the other is an oxygen generating part for generating O 2 from the electrolytic solution, the first gas generating part and the second gas generating part At least one of the two gas generation units is plural, and the photoelectric conversion unit, the first gas generation unit, and the second gas generation unit have an electromotive force generated when the photoelectric conversion unit receives light.
- the gas generator is electrically connected so as to be supplied to the second gas generator.
- a hydrogen production apparatus is an apparatus that can produce hydrogen from an electrolyte containing water.
- the photoelectric conversion part is a part that receives light and generates an electromotive force.
- the light receiving surface is a surface of the photoelectric conversion unit on which light is incident.
- the back surface is the back surface of the light receiving surface.
- the first gas generation unit and the second gas generation unit are alternately provided in parallel. According to such a configuration, it is possible to further shorten the distance of proton conduction between the electrolyte near the first gas generator and the electrolyte near the second gas generator.
- a partition wall is further provided between the first gas generation unit and the second gas generation unit. According to such a configuration, hydrogen and oxygen generated in the first gas generation unit and the second gas generation unit can be separated, and hydrogen can be recovered more efficiently.
- the partition wall is preferably provided so as to partition the first gas generation unit and the second gas generation unit. According to such a configuration, hydrogen can be recovered more efficiently.
- the first gas generation unit and the second gas generation unit are preferably substantially rectangular, and are provided so that the long sides are adjacent to each other with the partition wall in between. Is preferred. According to such a configuration, it is possible to further shorten the distance of proton conduction between the electrolyte near the first gas generator and the electrolyte near the second gas generator. Moreover, the area
- the first gas discharge port provided outside one short side of the first gas generation unit and the first gas discharge port provided outside one short side of the second gas generation unit It is preferable to further include two gas discharge ports, and the first gas discharge port and the second gas discharge port are preferably provided side by side. According to such a configuration, the generated hydrogen or oxygen can be easily recovered.
- the partition preferably includes an ion exchanger. According to such a configuration, the proton concentration imbalance between the electrolyte introduced into the space above the first gas generator and the electrolyte introduced into the space above the second gas generator. Can be eliminated, and hydrogen and oxygen can be generated stably.
- the first gas generation unit is electrically connected to the back surface of the photoelectric conversion unit, and the second gas generation unit is connected to the photoelectric conversion unit via the first conductive unit. It is preferable to be electrically connected to the light receiving surface. According to such a configuration, an electromotive force can be generated in the photoelectric conversion unit by causing light to enter the light receiving surface of the photoelectric conversion unit, and a potential difference can be generated between the light receiving surface and the back surface. Accordingly, the first gas generation unit electrically connected to the back surface of the photoelectric conversion unit, the second gas generation unit electrically connected to the light receiving surface of the photoelectric conversion unit via the first conductive unit, and A potential difference can be generated between the two.
- the electrolytic solution By bringing the electrolytic solution into contact with the first gas generating unit and the second gas generating unit in which this potential difference has occurred, either the first gas generating unit or the second gas generating unit is used as the electrolytic solution. Can generate H 2 , while O 2 can be generated from the electrolyte. By recovering the generated H 2 , hydrogen can be produced. Further, the photoelectric conversion portion can be made of a uniform material over the entire surface. For this reason, the light-receiving surface of a photoelectric conversion part can be enlarged, and the manufacturing cost of a hydrogen production apparatus can be reduced.
- the second gas generation unit is provided on the back surface of the photoelectric conversion unit via an insulating unit. According to such a configuration, it is possible to prevent leakage current from flowing between the second gas generation unit and the back surface of the photoelectric conversion unit.
- the apparatus further comprises a second electrode provided between the back surface of the photoelectric conversion unit and the first gas generation unit. According to such a configuration, the current flowing between the back surface of the photoelectric conversion unit and the first gas generation unit can be increased by the electromotive force of the photoelectric conversion unit, and hydrogen or oxygen can be generated more efficiently. Can do.
- the second electrode and the insulating portion have corrosion resistance and liquid shielding properties against the electrolytic solution. According to such a configuration, contact between the photoelectric conversion unit and the electrolytic solution can be prevented, and corrosion of the photoelectric conversion unit due to the electrolytic solution can be prevented.
- the insulating portion is provided so as to cover a side surface of the photoelectric conversion portion. According to such a configuration, the second conductive portion or the second gas generating portion can be formed on the insulating portion that covers the side surface, and the second conductive portion or the second gas generating portion is defined as the first conductive portion. It can be provided in contact with the electrode.
- the first conductive unit includes a first electrode that contacts the light receiving surface of the photoelectric conversion unit, and a second conductive unit that contacts the first electrode and the second gas generation unit, respectively. It is preferable to contain. According to such a configuration, the light receiving surface of the photoelectric conversion unit and the second gas generation unit can be electrically connected, and hydrogen or oxygen can be generated more efficiently.
- the second conductive portion is provided in a contact hole that penetrates the photoelectric conversion portion. According to such a configuration, the first electrode and the second gas generation unit can be electrically connected, and the reduction in the area of the light receiving surface of the photoelectric conversion unit due to the provision of the second conductive unit is reduced. can do.
- the second conductive portion has a cross section parallel to the light receiving surface of the photoelectric conversion portion, and the cross section is in the column direction of the first gas generating portion and the second gas generating portion. It is preferable to have an elongated shape parallel to the. According to such a configuration, it is possible to further reduce the potential drop caused by the movement of electric charge between the light receiving surface of the photoelectric conversion unit and the second gas generation unit.
- the second conductive part is provided so as to cover a side surface of the photoelectric conversion part. According to such a configuration, the second gas generation unit and the light receiving surface of the photoelectric conversion unit can be electrically connected without forming a contact hole in the photoelectric conversion unit, thereby reducing the manufacturing cost. it can.
- the first conductive part is composed of a first electrode in contact with the light receiving surface of the photoelectric conversion part, and the first electrode is in contact with the second gas generation part. According to such a configuration, the potential difference between the light receiving surface of the photoelectric conversion unit and the second gas generation unit can be further reduced.
- the second gas generation unit is provided so as to cover a side surface of the photoelectric conversion unit. According to such a configuration, the second gas generation unit and the light receiving surface of the photoelectric conversion unit can be electrically connected without forming a contact hole in the photoelectric conversion unit, thereby reducing the manufacturing cost. it can.
- the photoelectric conversion unit is preferably provided on a light-transmitting substrate. According to such a structure, the photoelectric conversion part which needs to be formed on a board
- the photoelectric conversion unit preferably has a photoelectric conversion layer composed of a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer. According to such a configuration, the photoelectric conversion unit can have a pin structure, and photoelectric conversion can be performed efficiently. Moreover, the electromotive force generated in the photoelectric conversion unit can be increased, and the electrolytic solution can be electrolyzed more efficiently.
- the photoelectric conversion unit includes a plurality of photoelectric conversion layers connected in series, and the plurality of photoelectric conversion layers generate an electromotive force generated by receiving light in the first gas generation unit and the second gas generation unit. It is preferable to output to the gas generating part.
- the photoelectric conversion unit 2 can generate an electromotive force capable of decomposing water and generating hydrogen.
- each photoelectric conversion layer is preferably connected in series by a third conductive portion.
- the photoelectric conversion layers can be provided side by side.
- the third conductive portion includes a translucent electrode provided on the light receiving surface side of the photoelectric conversion layer and a back electrode provided on the back surface side of the photoelectric conversion layer. Is preferred. According to such a configuration, the photoelectric conversion layers provided side by side can be connected in series.
- an insulating part provided between the back surface of the photoelectric conversion part and the second gas generating part, and a first part provided between the insulating part and the second gas generating part. It is preferable to further include four conductive portions. According to such a configuration, the internal resistance can be further reduced when the electromotive force generated by the photoelectric conversion unit receiving light is output to the second gas generation unit.
- an insulating portion provided in a part between the back surface of the photoelectric conversion portion and the first gas generating portion, and provided between the insulating portion and the first gas generating portion. It is preferable to further include a fifth conductive portion.
- each of the hydrogen generation unit and the oxygen generation unit includes a catalyst for a reaction in which H 2 is generated from the electrolytic solution and a catalyst for a reaction in which O 2 is generated from the electrolytic solution.
- the reaction rate of the reaction in which H 2 is generated from the electrolytic solution in the hydrogen generation unit can be increased, and the reaction rate of the reaction in which O 2 is generated from the electrolytic solution in the oxygen generation unit is increased. be able to.
- At least one of the hydrogen generation part and the oxygen generation part is a porous conductor carrying a catalyst. According to such a configuration, the surface area of at least one of the first gas generation unit and the second gas generation unit can be increased, and oxygen or hydrogen can be generated more efficiently. In addition, by using a porous conductor, a change in potential due to a current flowing between the photoelectric conversion unit and the catalyst can be suppressed, and hydrogen or oxygen can be generated more efficiently.
- the photoelectric conversion unit is provided on a light-transmitting substrate, and a top plate facing the substrate is provided on the first gas generation unit and the second gas generation unit. Further, it is preferable that a space is provided between the first gas generation unit and the second gas generation unit and the top plate. According to such a configuration, the electrolytic solution can be introduced between the first gas generation unit and the second gas generation unit and the top plate, and the first gas generation unit and the second gas generation H 2 and O 2 can be more efficiently generated from the electrolytic solution in the part.
- the present invention provides the hydrogen production apparatus of the present invention so that the light receiving surface of the photoelectric conversion unit is inclined with respect to a horizontal plane, introduces an electrolyte into the hydrogen production apparatus from the lower part of the hydrogen production apparatus, Also provided is a hydrogen production method in which light and oxygen are generated from the hydrogen generation unit and the oxygen generation unit by making light incident on the light receiving surface of the photoelectric conversion unit, and hydrogen and oxygen are discharged from the upper part of the hydrogen production apparatus. To do. According to the hydrogen production method of the present invention, hydrogen can be produced at low cost using sunlight.
- FIG. 1 shows a configuration of a hydrogen production device according to an embodiment of the present invention, and is a schematic plan view seen from the light receiving surface side of a photoelectric conversion unit.
- FIG. 2 is a schematic sectional view taken along the dotted line AA in FIG.
- FIG. 3 shows a configuration of the hydrogen production apparatus according to the embodiment of the present invention, and is a schematic back view seen from the back side of the photoelectric conversion unit.
- FIG. 9 shows the configuration of the hydrogen production apparatus according to one embodiment of the present invention, which is a schematic plan view seen from the light receiving surface side of the photoelectric conversion unit
- FIG. 10 is a schematic diagram of a dotted line BB in FIG. It is sectional drawing.
- the hydrogen production apparatus 23 of the present embodiment includes a photoelectric conversion unit 2 having a light receiving surface and a back surface, a first gas generation unit 8 and a second gas generation unit 7 provided on the back surface,
- One of the first gas generating unit 8 and the second gas generating unit 7 is a hydrogen generating unit that generates H 2 from the electrolytic solution, and the other is an oxygen generating unit that generates O 2 from the electrolytic solution,
- At least one of the one gas generation unit 8 and the second gas generation unit 7 is plural, and the photoelectric conversion unit 2, the first gas generation unit 8, and the second gas generation unit 7 are the photoelectric conversion unit 2.
- the electromotive force generated by receiving the light is electrically connected so as to be supplied to the first gas generation unit 8 and the second gas generation unit 7.
- the first conductive portion 9 included in the hydrogen production apparatus 23 of the present embodiment may be composed of the first electrode 4 and the second conductive portion 10, or may be composed only of the first electrode 4.
- the hydrogen production apparatus 23 of the present embodiment includes the substrate 1, the second electrode 5, the insulating portion 11, the partition wall 13, the top plate 14, the electrolyte flow path 15, the sealing material 16, the water supply port 18, and the first gas discharge port. 20, a second gas discharge port 19, a first gas discharge path 25, and a second gas discharge path 26 may be provided.
- the hydrogen production apparatus of this embodiment will be described.
- Substrate The substrate 1 may be provided in the hydrogen production apparatus 23 of the present embodiment. Moreover, the photoelectric conversion part 2 may be provided on the translucent board
- substrate 1 is a member used as the foundation for comprising this hydrogen production apparatus.
- substrate 1 is a member used as the foundation for comprising this hydrogen production apparatus.
- a substrate material having a high light transmittance for example, a transparent rigid material such as soda glass, quartz glass, Pyrex (registered trademark), or a synthetic quartz plate, or a transparent resin plate or film material is preferably used. In view of chemical and physical stability, it is preferable to use a glass substrate.
- a fine uneven structure can be formed so that incident light is effectively diffusely reflected on the surface of the photoelectric conversion unit 2.
- This fine concavo-convex structure can be formed by a known method such as reactive ion etching (RIE) treatment or blast treatment.
- RIE reactive ion etching
- the first conductive unit 9 electrically connects the second gas generating unit 7 and the light receiving surface of the photoelectric conversion unit 2. Further, the first conductive portion 9 may be composed of one member, or may be composed of the first electrode 4 and the second conductive portion 10. By providing the first conductive portion 9, the potential of the light receiving surface of the photoelectric conversion portion 2 and the potential of the second gas generation portion 7 can be made substantially the same, and hydrogen or oxygen can be generated in the second gas generation portion 7. Can be generated. Examples of the case where the first conductive portion 9 is made of one member include metal wiring that electrically connects the light receiving surface of the photoelectric conversion portion 2 and the second gas generation portion 7. For example, it is a metal wiring made of Ag.
- this metal wiring may have a shape like a finger electrode so as not to reduce the light incident on the photoelectric conversion unit 2.
- the first conductive unit 9 may be provided on the photoelectric conversion unit 2 side of the substrate 1 or may be provided on the light receiving surface of the photoelectric conversion unit 2.
- the first conductive portion 9 may be the first electrode 4 as shown in FIGS. 10 to 13 and the second gas generating portion 7 may be provided in contact with the first electrode 4.
- the 1st electrode 4 can be provided on the board
- the first electrode 4 By providing the first electrode 4, the current flowing between the light receiving surface of the photoelectric conversion unit 2 and the second gas generation unit 7 can be increased.
- the first electrode 4 may be provided on the entire light receiving surface of the photoelectric conversion unit 2 as shown in FIG. 2 or only on a part of the light receiving surface of the photoelectric conversion unit 2 as shown in FIGS. May be.
- the first electrode 4 may be made of a transparent conductive film such as ITO or SnO 2, or may be made of a metal finger electrode such as Ag or Au.
- the transparent conductive film is used to facilitate contact between the light receiving surface of the photoelectric conversion unit 2 and the second gas generation unit 7. What is generally used as a transparent electrode can be used. Specifically, In—Zn—O (IZO), In—Sn—O (ITO), ZnO—Al, Zn—Sn—O, SnO 2 and the like can be given.
- the transparent conductive film preferably has a sunlight transmittance of 85% or more, particularly 90% or more, and particularly 92% or more. This is because the photoelectric conversion unit 2 can absorb light efficiently.
- a known method can be used, and examples thereof include sputtering, vacuum deposition, sol-gel method, cluster beam deposition method, and PLD (Pulse Laser Deposition) method.
- the photoelectric conversion unit 2 has a light receiving surface and a back surface, and the first gas generation unit 8 and the second gas generation unit 7 can be provided in parallel on the back surface of the photoelectric conversion unit 2.
- the light receiving surface is a surface that receives light for photoelectric conversion
- the back surface is the back surface of the light receiving surface.
- the photoelectric conversion unit 2 can be provided on the substrate 1 on which the first electrode 4 is provided with the light receiving surface facing down.
- the shape of the photoelectric conversion part 2 is not specifically limited, For example, it is substantially square.
- the first gas generation unit 8 having a certain width and the second gas generation unit 7 having a certain width are arranged in parallel with one side of the photoelectric conversion unit. be able to.
- the width of the photoelectric conversion unit 2 in the direction in which the first gas generation unit 8 and the second gas generation unit 7 are arranged is, for example, 50 cm or more and 200 cm or less.
- the size of the hydrogen production apparatus can be increased, and the amount of hydrogen generation can be increased.
- vertical to the direction where the 1st gas generation part 8 and the 2nd gas generation part 7 were located is 50 cm or more and 200 cm or less, for example.
- the photoelectric conversion unit 2 is not particularly limited as long as it can separate charges by incident light and generates an electromotive force.
- the photoelectric conversion unit using a silicon-based semiconductor or the photoelectric conversion unit using a compound semiconductor A photoelectric conversion part using a dye sensitizer, a photoelectric conversion part using an organic thin film, and the like.
- the photoelectric conversion unit 2 may generate an electromotive force between the light receiving surface and the back surface. Further, as shown in FIGS. 14 to 18, an electromotive force may be generated between two different regions on one surface of the photoelectric conversion unit.
- Such a photoelectric conversion unit 2 can be formed by, for example, a semiconductor substrate on which an n-type semiconductor region and a p-type semiconductor region are formed as shown in FIGS.
- the photoelectric conversion unit 2 needs to use a material that generates electromotive force necessary to generate hydrogen and oxygen in the hydrogen generation unit and the oxygen generation unit, respectively, by receiving light.
- the potential difference between the hydrogen generation unit and the oxygen generation unit needs to be larger than the theoretical voltage (1.23 V) for water splitting. For that purpose, it is necessary to generate a sufficiently large potential difference in the photoelectric conversion unit 2. Therefore, it is preferable that the photoelectric conversion unit 2 connects two or more junctions in series such as a pn junction to generate an electromotive force.
- Examples of materials that perform photoelectric conversion include silicon-based semiconductors, compound semiconductors, and materials based on organic materials, and any photoelectric conversion material can be used.
- these photoelectric conversion materials can be stacked. In the case of stacking, it is possible to form a multi-junction structure with the same material, but stacking multiple photoelectric conversion layers with different optical band gaps and complementing the low sensitivity wavelength region of each photoelectric conversion layer mutually By doing so, incident light can be efficiently absorbed over a wide wavelength region.
- the plurality of photoelectric conversion layers preferably have different band gaps. According to such a configuration, the electromotive force generated in the photoelectric conversion unit can be further increased, and the electrolytic solution can be electrolyzed more efficiently.
- the photoelectric conversion unit 2 may be one in which the photoelectric conversion layers 35 formed side by side are connected in series by a third conductive unit 33. Further, when an electromotive force is generated between the light receiving surface side and the back surface side of the photoelectric conversion layer 35, the translucent electrode 30 and the photoelectric conversion layer provided on the light receiving surface side of the photoelectric conversion layer 35 as shown in FIGS.
- the third conductive portion 33 can be formed by electrically connecting the back surface electrode 31 provided on the back surface side of 35.
- the translucent electrode 30 can be formed by the same method as the first electrode 4.
- the first electrode 4 and the translucent electrode 3 may be formed simultaneously by forming a translucent conductive film on the substrate 1 by CVD or sputtering, and subjecting the translucent conductive film to laser scribing. it can.
- the back electrode 31 can be formed by the same method as the second electrode 5.
- the method of electrically connecting the translucent electrode 30 and the back electrode 31 may be, for example, a method of forming a contact hole in the photoelectric conversion layer 35, and a part of the back electrode 31 is translucent. It may be a method of forming on a part of the electrode 30.
- the third conductive portion 33 can be formed as shown in FIGS.
- An example of the photoelectric conversion unit 2 will be specifically described below.
- the photoelectric conversion unit 2 may be a combination of these.
- the example of the following photoelectric conversion parts 2 can also be used as the photoelectric conversion layer 35 as long as there is no contradiction.
- Photoelectric conversion part using a silicon-based semiconductor examples include a single crystal type, a polycrystalline type, an amorphous type, a spherical silicon type, and combinations thereof. Any of them can have a pn junction in which a p-type semiconductor and an n-type semiconductor are joined. Further, a pin junction in which an i-type semiconductor is provided between a p-type semiconductor and an n-type semiconductor may be provided. Further, it may have a plurality of pn junctions, a plurality of pin junctions, or a pn junction and a pin junction.
- the silicon-based semiconductor is a semiconductor containing silicon, such as silicon, silicon carbide, or silicon germanium.
- the photoelectric conversion unit 2 using a silicon-based semiconductor may be a thin film or a thick photoelectric conversion layer formed on the substrate 1, and a pn junction or a pin junction is formed on a wafer such as a silicon wafer.
- a thin film photoelectric conversion layer may be formed on a wafer on which a pn junction or a pin junction is formed.
- a first conductivity type semiconductor layer is formed on the first electrode 4 stacked on the substrate 1 by a method such as a plasma CVD method.
- a method such as a plasma CVD method.
- As the first conductive type semiconductor layer a p + type or n + type amorphous Si thin film doped with a conductivity type determining impurity atom concentration of about 1 ⁇ 10 18 to 5 ⁇ 10 21 / cm 3 , a polycrystalline or A microcrystalline Si thin film is used.
- the material of the first conductivity type semiconductor layer is not limited to Si, and it is also possible to use a compound such as SiC, SiGe, or Si x O 1-x .
- a polycrystalline or microcrystalline crystalline Si thin film is formed as a crystalline Si photoactive layer by a method such as plasma CVD.
- the conductivity type is the first conductivity type having a lower doping concentration than the first conductivity type semiconductor, or the i conductivity type.
- the material for the crystalline Si-based photoactive layer is not limited to Si, and it is also possible to use a compound such as SiC, SiGe, or Si x O 1-x .
- a second conductivity type semiconductor layer having a conductivity type opposite to the first conductivity type semiconductor layer is formed by a method such as plasma CVD.
- a method such as plasma CVD.
- an n + type or p + type amorphous Si thin film doped with about 1 ⁇ 10 18 to 5 ⁇ 10 21 / cm 3 of a conductivity type determining impurity atom, or a polycrystalline or microscopic A crystalline Si thin film is used.
- the material of the second conductivity type semiconductor layer is not limited to Si, and it is also possible to use a compound such as SiC, SiGe, or Si x O 1-x .
- the second photoelectric conversion layer is composed of a first conductivity type semiconductor layer, a crystalline Si-based photoactive layer, and a second conductivity type semiconductor layer, each layer corresponding to the first photoelectric conversion layer.
- the first conductive type semiconductor layer, the crystalline Si-based photoactive layer, and the second conductive type semiconductor layer are formed.
- the volume crystallization fraction of the crystalline Si photoactive layer of the second photoelectric conversion layer is preferably higher than that of the first crystalline Si photoactive layer.
- the volume crystallization fraction as compared with the lower layer. This increases the absorption in the long wavelength region, shifts the spectral sensitivity to the long wavelength side, and can improve the sensitivity in a wide wavelength region even when the photoactive layer is configured using the same Si material. It is because it becomes. That is, by using a tandem structure with Si having different crystallization rates, the spectral sensitivity is widened, and light can be used with high efficiency. At this time, if the low crystallization rate material is not on the light receiving surface side, high efficiency cannot be achieved. Further, when the crystallization rate is lowered to 40% or less, the amorphous component increases and deterioration occurs.
- the photoelectric conversion part 2 which consists of each photoelectric conversion layer connected in series by laminating
- the photoelectric conversion part 2 can also be formed.
- the silicon substrate a single crystal silicon substrate, a polycrystalline silicon substrate, or the like can be used, and may be p-type, n-type, or i-type.
- An n-type semiconductor region 37 is formed by doping an n-type impurity such as P into a part of the silicon substrate by thermal diffusion or ion implantation, and a p-type impurity such as B is heated on the other part of the silicon substrate.
- the p-type semiconductor region 36 can be formed by doping by diffusion or ion implantation.
- pn junction in the silicon substrate, pin junction can be formed and npp + junction or pnn + junction, it is possible to form a photoelectric conversion unit 2.
- the n-type semiconductor region 37 and the p-type semiconductor region 36 can each be formed on a silicon substrate as shown in FIG. 16, and the n-type semiconductor region 37 and the p-type semiconductor region 36 are shown in FIGS. A plurality of either of them can be formed. Further, as shown in FIGS. 15 and 17, the silicon substrate on which the n-type semiconductor region 37 and the p-type semiconductor region 36 are formed is placed side by side and connected in series by the third conductive portion 33 to form the photoelectric conversion unit 2. You can also. Further, as shown in FIG. 18, the trench isolation 42 is formed in one silicon substrate, and the n-type semiconductor region 37 and the p-type semiconductor region 36 are formed in the respective regions separated by the trench isolation 42, thereby producing photoelectric.
- the conversion part 2 can also be formed. Note that, although described with reference to a silicon substrate, pn junction, pin junction, may use other semiconductor substrate or the like can be formed npp + junction or pnn + junction. In addition, as long as the n-type semiconductor region 37 and the p-type semiconductor region 36 can be formed, the semiconductor layer is not limited to the semiconductor substrate and may be a semiconductor layer formed on the substrate.
- Photoelectric conversion part using a compound semiconductor is, for example, GaP, GaAs, InP, InAs, or IId-VI elements composed of group III-V elements, CdTe / CdS, Examples thereof include those in which a pn junction is formed using CIGS (Copper Indium Gallium DiSelenide) composed of the I-III-VI group.
- CIGS Copper Indium Gallium DiSelenide
- a method for manufacturing a photoelectric conversion unit using a compound semiconductor is shown below.
- MOCVD metal organic chemical vapor deposition
- a group III element material for example, an organic metal such as trimethylgallium, trimethylaluminum, or trimethylindium is supplied to the growth apparatus using hydrogen as a carrier gas.
- a gas such as arsine (AsH 3 ), phosphine (PH 3 ), and stibine (SbH 3 ) is used as the material of the group V element.
- Examples of p-type or n-type impurity dopants include diethyl zinc for p-type conversion, monosilane (SiH 4 ), disilane (Si 2 H 6 ), and hydrogen selenide (H 2 Se) for n-type conversion. Etc. are used. These source gases can be thermally decomposed by supplying them onto a substrate heated to, for example, 700 ° C., and a desired compound semiconductor material film can be epitaxially grown. The composition of these growth layers can be controlled by the gas composition to be introduced, and the film thickness can be controlled by the gas introduction time. When multi-junction laminating these photoelectric conversion parts, it is possible to form a growth layer with excellent crystallinity by adjusting the lattice constant between layers as much as possible, and to improve the photoelectric conversion efficiency. Become.
- a known window layer on the light receiving surface side or a known electric field layer on the non-light receiving surface side may be provided to improve carrier collection efficiency.
- a buffer layer for preventing diffusion of impurities may be provided.
- the photoelectric conversion part using a dye sensitizer is mainly composed of, for example, a porous semiconductor, a dye sensitizer, an electrolyte, a solvent, and the like.
- a material constituting the porous semiconductor for example, one or more kinds of known semiconductors such as titanium oxide, tungsten oxide, zinc oxide, barium titanate, strontium titanate, cadmium sulfide can be selected.
- a paste containing semiconductor particles is applied by a screen printing method, an ink jet method and the like, dried or baked, a method of forming a film by a CVD method using a raw material gas, etc. , PVD method, vapor deposition method, sputtering method, sol-gel method, method using electrochemical oxidation-reduction reaction, and the like.
- the dye sensitizer adsorbed on the porous semiconductor various dyes having absorption in the visible light region and the infrared light region can be used.
- the carboxylic acid group, carboxylic anhydride group, alkoxy group, sulfonic acid group, hydroxyl group, hydroxylalkyl group, ester group, mercapto group, phosphonyl in the dye molecule It is preferable that a group or the like is present.
- These functional groups provide an electrical bond that facilitates electron transfer between the excited state dye and the conduction band of the porous semiconductor.
- dyes containing these functional groups include ruthenium bipyridine dyes, quinone dyes, quinone imine dyes, azo dyes, quinacridone dyes, squarylium dyes, cyanine dyes, merocyanine dyes, and triphenylmethane dyes.
- ruthenium bipyridine dyes quinone dyes, quinone imine dyes, azo dyes, quinacridone dyes, squarylium dyes, cyanine dyes, merocyanine dyes, and triphenylmethane dyes.
- Xanthene dyes porphyrin dyes, phthalocyanine dyes, berylene dyes, indigo dyes, naphthalocyanine dyes, and the like.
- Examples of the method of adsorbing the dye to the porous semiconductor include a method of immersing the porous semiconductor in a solution in which the dye is dissolved (dye adsorption solution).
- the solvent used in the dye adsorption solution is not particularly limited as long as it dissolves the dye, and specifically, alcohols such as ethanol and methanol, ketones such as acetone, ethers such as diethyl ether and tetrahydrofuran.
- Nitrogen compounds such as acetonitrile, aliphatic hydrocarbons such as hexane, aromatic hydrocarbons such as benzene, esters such as ethyl acetate, water, and the like.
- the electrolyte is composed of a redox pair and a solid medium such as a liquid or polymer gel holding the redox pair.
- a redox pair iron- and cobalt-based metals and halogen substances such as chlorine, bromine, and iodine are preferably used as the redox pair, and metal iodides such as lithium iodide, sodium iodide, and potassium iodide and iodine are used.
- the combination of is preferably used.
- imidazole salts such as dimethylpropylimidazole iodide can also be mixed.
- carbonate compounds such as propylene carbonate, nitrile compounds such as acetonitrile, alcohols such as ethanol and methanol, water, aprotic polar substances, and the like are used. Of these, carbonate compounds and nitrile compounds are preferred. Used.
- a photoelectric conversion part using an organic thin film comprises an electron hole transport layer composed of an organic semiconductor material having electron donating properties and electron accepting properties, or an electron transport layer having electron accepting properties. It may be a laminate of a hole transport layer having an electron donating property.
- the electron-donating organic semiconductor material is not particularly limited as long as it has a function as an electron donor, but it is preferable that a film can be formed by a coating method, and among them, an electron-donating conductive polymer is preferably used.
- the conductive polymer refers to a ⁇ -conjugated polymer, which is composed of a ⁇ -conjugated system in which double bonds or triple bonds containing carbon-carbon or hetero atoms are alternately connected to single bonds, and exhibits semiconducting properties. Point.
- Examples of the electron-donating conductive polymer material include polyphenylene, polyphenylene vinylene, polythiophene, polycarbazole, polyvinyl carbazole, polysilane, polyacetylene, polypyrrole, polyaniline, polyfluorene, polyvinyl pyrene, polyvinyl anthracene, and derivatives, Examples thereof include a polymer, a phthalocyanine-containing polymer, a carbazole-containing polymer, and an organometallic polymer.
- thiophene-fluorene copolymer polyalkylthiophene, phenylene ethynylene-phenylene vinylene copolymer, fluorene-phenylene vinylene copolymer, thiophene-phenylene vinylene copolymer and the like are preferably used.
- the electron-accepting organic semiconductor material is not particularly limited as long as it has a function as an electron acceptor. However, it is preferable that a film can be formed by a coating method, and among them, an electron-donating conductive polymer is preferably used.
- the electron-accepting conductive polymer include polyphenylene vinylene, polyfluorene, and derivatives and copolymers thereof, or carbon nanotubes, fullerene and derivatives thereof, CN group or CF 3 group-containing polymers, and —CF Examples thereof include 3- substituted polymers.
- an electron-accepting organic semiconductor material doped with an electron-donating compound an electron-donating organic semiconductor material doped with an electron-accepting compound, or the like can be used.
- the electron-accepting conductive polymer material doped with the electron-donating compound include the above-described electron-accepting conductive polymer material.
- a Lewis base such as an alkali metal such as Li, K, Ca, or Cs or an alkaline earth metal can be used. The Lewis base acts as an electron donor.
- the electron-donating conductive polymer material doped with the electron-accepting compound include the above-described electron-donating conductive polymer material.
- a Lewis acid such as FeCl 3 , AlCl 3 , AlBr 3 , AsF 6 or a halogen compound can be used.
- Lewis acid acts as an electron acceptor.
- photoelectric conversion unit 2 In the photoelectric conversion unit 2 shown above, it is assumed that sunlight is received and photoelectric conversion is primarily performed. However, it is emitted from a fluorescent lamp, an incandescent lamp, an LED, or a specific heat source depending on the application. It is also possible to perform photoelectric conversion by irradiating artificial light such as light.
- the second electrode 5 can be provided between the photoelectric conversion unit 2 and the first gas generation unit 8.
- the potential of the back surface of the photoelectric conversion unit 2 and the potential of the first gas generation unit 8 can be made substantially the same.
- the ohmic cross between the back surface of the photoelectric conversion unit 2 and the first gas generation unit 8 can be reduced.
- the electric current which flows between the back surface of the photoelectric conversion part 2 and the 1st gas generation part 8 can be enlarged. Thereby, hydrogen or oxygen can be more efficiently generated by the electromotive force generated in the photoelectric conversion unit 2.
- the second electrode 5 can be omitted.
- the 2nd electrode 5 has the corrosion resistance with respect to electrolyte solution, and the liquid shielding property with respect to electrolyte solution. Thereby, corrosion of the photoelectric conversion part 2 by electrolyte solution can be prevented.
- the 2nd electrode 5 has electroconductivity
- it is a metal thin film, for example, is thin films, such as Al, Ag, Au. These can be formed by, for example, sputtering.
- a transparent conductive film such as In—Zn—O (IZO), In—Sn—O (ITO), ZnO—Al, Zn—Sn—O, and SnO 2 is used.
- Insulating part The insulating part 11 can be provided between the back surface of the photoelectric conversion part 2 and the second gas generating part 7. The insulating part 11 can also be provided between the first gas generating part 8 and the second gas generating part 7. Furthermore, the insulating part 11 is between the first conductive part 9 and the photoelectric conversion part 2, between the second conductive part 10 and the photoelectric conversion part 2, and between the second conductive part 10 and the second electrode 5. It can be provided in between.
- an electromotive force generated in the photoelectric conversion unit 2 causes a current to flow between the light receiving surface of the photoelectric conversion unit 2 and the second gas generation unit 7. A current can flow between the gas generating unit 8 and the first gas generating unit 8. Further, the leakage current can be further reduced.
- the potential of the light receiving surface of the photoelectric conversion unit 2 and the potential of the second gas generation unit 7 can be made substantially the same, and the potential of the back surface of the photoelectric conversion unit 2 and the first gas generation unit 8 can be made. Can be made substantially the same, and hydrogen and oxygen can be generated more efficiently.
- An opening for electrically connecting the first gas generating unit 8 and a part of the back surface of the photoelectric conversion unit 2 and the second surface can be provided between the generation unit 7 and the back surface of the photoelectric conversion unit 2.
- An opening for electrically connecting the gas generating unit 7 and a part of the back surface of the photoelectric conversion unit 2 can be provided.
- the 5th electroconductive part 44 provided between the insulating part 11 and the 1st gas generation part 8 can be provided.
- the 4th electroconductive part 45 provided between the insulating part 11 and the 2nd gas generation part 7 can be provided.
- the insulation part 11 has the corrosion resistance with respect to electrolyte solution, and the liquid shielding property with respect to electrolyte solution. Thereby, corrosion of the photoelectric conversion part 2 by electrolyte solution can be prevented.
- the insulating part 11 can be used regardless of an organic material or an inorganic material.
- organic polymers and inorganic materials include metal oxides such as Al 2 O 3 , SiO 2 such as porous silica films, fluorine-added silicon oxide films (FSG), SiOC, HSQ (Hydrogen Silsesquioxane) films, SiN x , It is possible to use a method of forming a film by dissolving silanol (Si (OH) 4 ) in a solvent such as alcohol and applying and heating.
- a film containing a paste containing an insulating material is applied by a screen printing method, an ink jet method, a spin coating method, etc., dried or baked, or a CVD method using a source gas is used. And a method using a PVD method, a vapor deposition method, a sputtering method, a sol-gel method, and the like.
- Second Conductive Part The second conductive part 10 can be provided so as to be in contact with the first electrode 4 and the second gas generating part 7, respectively.
- the first electrode 4 that is in contact with the light receiving surface of the photoelectric conversion portion 2 and the second gas generating portion 7 can be easily electrically connected. Since the second conductive unit 10 contacts the first electrode 4 in contact with the light receiving surface of the photoelectric conversion unit 2 and the second gas generation unit 7 provided on the back surface of the photoelectric conversion unit 2, the photoelectric conversion unit 2 If the cross-sectional area of the second conductive portion parallel to the light receiving surface is too large, the area of the light receiving surface of the photoelectric conversion portion 2 is reduced.
- the cross-sectional area of the second conductive part 10 parallel to the light receiving surface of the photoelectric conversion unit 2 is made too small, there is a difference between the potential of the light receiving surface of the photoelectric conversion unit 2 and the potential of the second gas generating unit 7. May occur, and a potential difference for decomposing the electrolytic solution may not be obtained, which may lead to a decrease in the generation efficiency of hydrogen or oxygen. Therefore, the cross-sectional area of the second conductive part parallel to the light receiving surface of the photoelectric conversion part 2 needs to be within a certain range.
- the cross-sectional area of the second conductive part parallel to the light-receiving surface of the photoelectric conversion unit 2 is 100% of the area of the light-receiving surface of the photoelectric conversion unit 2 In this case, it can be 0.1% or more and 10% or less, preferably 0.5% or more and 8% or less, and more preferably 1% or more and 6% or less.
- the second conductive portion 10 may be provided in a contact hole that penetrates the photoelectric conversion portion 2.
- the reduction in the area of the light receiving surface of the photoelectric conversion unit 2 due to the provision of the second conductive unit 10 can be further reduced.
- this makes it possible to shorten the current path between the light receiving surface of the photoelectric conversion unit 2 and the second gas generation unit 7 and to generate hydrogen or oxygen more efficiently.
- this makes it possible to easily adjust the cross-sectional area of the second conductive portion 10 parallel to the light receiving surface of the photoelectric conversion portion 2.
- the contact hole provided with the second conductive portion 10 may be one or plural, and may have a circular cross section.
- the cross-sectional area of the contact hole parallel to the light-receiving surface of the photoelectric conversion unit 2 is 0 when the area of the light-receiving surface of the photoelectric conversion unit 2 is 100%. .1% or more and 10% or less, preferably 0.5% or more and 8% or less, more preferably 1% or more and 6% or less. According to such a configuration, the reduction in the area of the light receiving surface of the photoelectric conversion unit due to the provision of the second conductive unit can be reduced.
- the second conductive portion 10 is formed from a portion provided in a contact hole penetrating the photoelectric conversion portion 2 and a portion provided between the second gas generating portion 7 and the insulating portion 11 as shown in FIG. It may be.
- the electrical connection between the second gas generation unit 7 and the second conductive unit 10 is sufficient, and the light receiving surface of the photoelectric conversion unit 2 and the potential of the second gas generation unit 7 are substantially the same. can do.
- a catalyst having low conductivity can be used for the second gas generation unit 7.
- the second conductive unit 10 may be provided in a region where the photoelectric conversion unit 2 is not formed. Further, the second conductive unit 10 may be provided so as to cover the side surface of the photoelectric conversion unit 2.
- the material of the second conductive portion 10 is not particularly limited as long as it has conductivity.
- a paste containing conductive particles for example, a carbon paste, an Ag paste or the like applied by screen printing, an inkjet method, etc., dried or baked, a method of forming a film by a CVD method using a raw material gas, a PVD method, Examples thereof include a vapor deposition method, a sputtering method, a sol-gel method, and a method using an electrochemical redox reaction.
- FIG. 5 shows a hydrogen production apparatus according to an embodiment of the present invention as viewed from the light receiving surface side.
- the cross section of the second conductive unit 10 parallel to the light receiving surface of the photoelectric conversion unit 2 may be circular as shown in FIG. 1 or may be elongated as shown in FIG. Further, the number of the second conductive parts 10 may be plural for each of the second gas generating parts 7 as shown in FIG. 1, and for each of the second gas generating parts 7 and 1 as shown in FIG. One may be sufficient.
- the second conductive portion 10 provided in the contact hole for electrically connecting the light receiving surface of the photoelectric conversion portion 2 and the second gas generating portion 7 has a long shape substantially parallel to the partition wall 13. May be formed.
- the second conductive portion 10 provided in the contact hole has a cross section parallel to the light receiving surface of the photoelectric conversion portion 2, and the cross section is a row of the first gas generation portion and the second gas generation portion. You may have a shape parallel to a direction.
- the first gas generation unit 8 is provided on the back surface of the photoelectric conversion unit 2. Thus, the first gas generation unit 8 does not block the light incident on the photoelectric conversion unit 2.
- the first gas generation unit 8 is one of a hydrogen generation unit and an oxygen generation unit, and can be electrically connected to the back surface of the photoelectric conversion unit 2.
- a fifth conductive unit 44 is provided between the photoelectric conversion unit 2 and the first gas generation unit 8. Is also possible. Thereby, the potential of the back surface of the photoelectric conversion unit 2 and the potential of the first gas generation unit 8 can be made substantially the same, and hydrogen or oxygen can be generated by the electromotive force generated in the photoelectric conversion unit 2. .
- production part 8 is plural, and it may be provided so that the 2nd gas generation
- the boundary between the first gas generation unit 8 and the second gas generation unit 7 can be increased, and the electrolyte solution in the vicinity of the first gas generation unit 8 and the vicinity of the second gas generation unit 7 The distance of the electrolyte solution can be shortened.
- the first gas generation unit 8 can be provided so as not to contact the second gas generation unit 7. Thereby, it is possible to prevent leakage current from flowing between the first gas generation unit 8 and the second gas generation unit 7. Further, the first gas generation unit 8 may be exposed to the electrolyte flow path 15. As a result, H 2 or O 2 can be generated from the electrolytic solution on the surface of the first gas generating unit 8.
- the second gas generating unit 7 is provided on the back surface of the photoelectric conversion unit 2. Thus, the second gas generation unit 7 does not block the light incident on the photoelectric conversion unit 2.
- the second gas generation unit 7 is one of a hydrogen generation unit and an oxygen generation unit, and can be electrically connected to the light receiving surface of the photoelectric conversion unit 2 via the first conductive unit 9. . Thereby, the potential of the light receiving surface of the photoelectric conversion unit 2 and the potential of the second gas generation unit 7 can be made substantially the same, and hydrogen or oxygen can be generated by the electromotive force generated in the photoelectric conversion unit 2. it can.
- a fourth gas generation unit 45 is provided between the photoelectric conversion unit 2 and the second gas generation unit 7. Is also possible.
- the second gas generation unit 7 can be electrically connected to the photoelectric conversion unit via the back surface of the photoelectric conversion unit.
- the second gas generation unit 7 can also be provided so as to be in contact with the first electrode 4.
- the potential of the light receiving surface of the photoelectric conversion unit 2 and the potential of the second gas generation unit 7 can be made substantially the same. For example, as shown in FIGS.
- the side surface of the photoelectric conversion unit 2 can be covered with the insulating unit 11, and the second gas generation unit 7 can be provided thereon so as to cover the side surface of the photoelectric conversion unit 2. .
- the second gas generating unit 7 and the light receiving surface of the photoelectric conversion unit 2 can be electrically connected without forming a contact hole.
- the second conductive portion 10 may be provided between the first electrode 4 and the second gas generation portion 7. As a result, the internal resistance can be reduced.
- the 2nd gas generation part 7 is plural, and it may be provided so that it may be arranged in parallel with the 1st gas generation part 8 alternately.
- the second gas generation unit 7 may be provided on the back surface of the photoelectric conversion unit 2 via the insulating unit 11. Further, the second gas generation unit 7 can be provided so as not to contact the first gas generation unit 8. This can prevent a leakage current from flowing. Further, the second gas generation unit 7 may be exposed to the electrolyte flow path 15. As a result, H 2 or O 2 can be generated from the electrolytic solution on the surface of the second gas generating unit 7.
- variety of the direction where the 1st gas generation part 8 and the 2nd gas generation part 7 were arranged in parallel is not specifically limited, For example, it may be the same and may differ like FIG. .
- the first gas generation unit 8 may have a width of, for example, 5 cm or more and 20 cm or less.
- the 2nd gas generation part 7 may have a width
- the width of the first gas generation unit 8 may be 50 or more and 200 or less, or 50 or more and 80 or less and 120 or more and 200 or less, where the width of the second gas generation unit 8 is 100. Also good. According to such a structure, the width
- the width of the first gas generation part 8 and the second gas generation part 7 that becomes the hydrogen generation part may be wider than the width that becomes the oxygen generation part.
- the width of the hydrogen generation part may be 1.2 to 2.5 times the width of the oxygen generation part.
- the width of the first gas generation unit 8 and the second gas generation unit 7 that becomes the hydrogen generation unit can be substantially double the width of the direction that becomes the oxygen generation unit.
- the width of the electrolyte channel 15 above the hydrogen generator and the width of the electrolyte channel 15 above the oxygen generator may be substantially 2: 1 in accordance with this width.
- the ratio of hydrogen and oxygen generation amount from water is 2: 1, if the activity of the hydrogen generation catalyst included in the hydrogen generation portion and the oxygen generation catalyst included in the oxygen generation portion are equivalent and the catalyst loading amount is equal, According to this configuration, the influence on the hydrogen generation rate and the oxygen generation rate due to accumulation of bubbles and gas can be made substantially the same, and hydrogen can be generated more efficiently.
- At least one of the first gas generation unit 8 and the second gas generation unit 7 has a catalyst surface area larger than the area of the light receiving surface. According to such a configuration, hydrogen or oxygen can be generated more efficiently by the electromotive force generated in the photoelectric conversion unit.
- at least one of the first gas generation unit and the second gas generation unit is a porous conductor carrying a catalyst. According to such a configuration, the surface area of at least one of the first gas generation unit and the second gas generation unit can be increased, and oxygen or hydrogen can be generated more efficiently.
- a porous conductor a change in potential due to a current flowing between the photoelectric conversion unit and the catalyst can be suppressed, and hydrogen or oxygen can be generated more efficiently.
- Hydrogen generating part is a part that generates H 2 from the electrolytic solution, and is one of the first gas generating part 8 and the second gas generating part 7.
- produces from the electrolyte solution near a hydrogen generation part, it is thought that the proton concentration of this electrolyte solution decreases. This decrease in proton concentration is eliminated by the generation of proton conduction with the electrolyte near the oxygen generating portion.
- the hydrogen generation unit may include a catalyst for a reaction in which H 2 is generated from the electrolytic solution. Thereby, the reaction rate of the reaction in which H 2 is generated from the electrolytic solution can be increased.
- the hydrogen generation part may consist only of a catalyst for the reaction in which H 2 is generated from the electrolytic solution, or this catalyst may be supported on a support. Further, the hydrogen generation unit may have a catalyst surface area larger than the area of the light receiving surface of the photoelectric conversion unit 2. Thereby, the reaction in which H 2 is generated from the electrolytic solution can be set to a faster reaction rate.
- the hydrogen generation part may be a porous conductor carrying a catalyst. This can increase the catalyst surface area.
- the hydrogen generation unit may include at least one of Pt, Ir, Ru, Pd, Rh, Au, Fe, Ni, and Se as a hydrogen generation catalyst. According to such a configuration, hydrogen can be generated at a higher reaction rate by the electromotive force generated in the photoelectric conversion unit.
- the catalyst for the reaction of generating H 2 from the electrolyte is a catalyst that promotes the conversion of two protons and two electrons into one molecule of hydrogen, is chemically stable, and generates hydrogen overvoltage.
- platinum group metals such as Pt, Ir, Ru, Pd, Rh, and Au, which have catalytic activity for hydrogen, and alloys or compounds thereof, Fe, Ni, and Se that constitute the active center of hydrogenase that is a hydrogen-producing enzyme.
- An alloy or a compound, a combination thereof, or the like can be preferably used.
- a nanostructure containing Pt and Pt has a small hydrogen generation overvoltage and can be suitably used.
- Materials such as CdS, CdSe, ZnS, and ZrO 2 whose hydrogen generation reaction is confirmed by light irradiation can also be used.
- the metal material a material having electronic conductivity and resistance to corrosion in an acidic atmosphere is preferable.
- noble metals such as Au, Pt, Pd, metals such as Ti, Ta, W, Nb, Ni, Al, Cr, Ag, Cu, Zn, Su, Si, and nitrides and carbides of these metals
- the alloy include stainless steel, Cu—Cr, Ni—Cr, and Ti—Pt.
- the metal material contains at least one element selected from the group consisting of Pt, Ti, Au, Ag, Cu, Ni, and W from the viewpoint that there are few other chemical side reactions. These metal materials have a relatively small electric resistance, and can suppress a decrease in voltage even when a current is extracted in the surface direction.
- a metal surface having poor corrosion resistance may be coated with a conductive polymer, a conductive nitride, a conductive carbide, a conductive oxide, or the like.
- the carbonaceous material a chemically stable and conductive material is preferable.
- examples thereof include carbon powders and carbon fibers such as acetylene black, vulcan, ketjen black, furnace black, VGCF, carbon nanotube, carbon nanohorn, and fullerene.
- Examples of the inorganic material having conductivity include In—Zn—O (IZO), In—Sn—O (ITO), ZnO—Al, Zn—Sn—O, SnO 2 , and antimony oxide-doped tin oxide. .
- examples of the conductive polymer include polyacetylene, polythiophene, polyaniline, polypyrrole, polyparaphenylene, polyparaphenylene vinylene, and the like
- examples of the conductive nitride include carbon nitride, silicon nitride, gallium nitride, indium nitride, and nitride. Germanium, titanium nitride, zirconium nitride, thallium nitride, etc.
- conductive carbides include tantalum carbide, silicon carbide, zirconium carbide, titanium carbide, molybdenum carbide, niobium carbide, iron carbide, nickel carbide, hafnium carbide, tungsten carbide. , Vanadium carbide, chromium carbide, and the like.
- conductive oxide include tin oxide, indium tin oxide (ITO), and antimony oxide-doped tin oxide.
- the structure of the conductor supporting the hydrogen generation catalyst includes a plate shape, a foil shape, a rod shape, a mesh shape, a lath plate shape, a porous plate shape, a porous rod shape, a woven fabric shape, a nonwoven fabric shape, a fiber shape, and a felt shape. It can be used suitably. Further, a grooved conductor in which the surface of the felt-like electrode is pressure-bonded in a groove shape is preferable because the electric resistance and the flow resistance of the electrode liquid can be reduced.
- Oxygen generating part is a part for generating O 2 from the electrolytic solution, and is either one of the first gas generating part 8 and the second gas generating part 7.
- produces from the electrolyte solution near an oxygen generation part, it is thought that the proton concentration of this electrolyte solution increases. This increase in proton concentration is eliminated by the generation of proton conduction with the electrolyte near the hydrogen generation part.
- the oxygen generation unit may include a catalyst for a reaction in which O 2 is generated from the electrolytic solution.
- the reaction rate of the reaction in which O 2 is generated from the electrolytic solution can be increased.
- the oxygen generation part may consist only of a catalyst for the reaction that generates O 2 from the electrolytic solution, or the catalyst may be supported on a carrier.
- the oxygen generation unit may have a catalyst surface area larger than the area of the light receiving surface of the photoelectric conversion unit 2. Thereby, the reaction in which O 2 is generated from the electrolytic solution can be set to a faster reaction rate.
- the oxygen generation part may be a porous conductor carrying a catalyst. This can increase the catalyst surface area.
- the oxygen generation unit may include at least one of Mn, Ca, Zn, Co, and Ir as an oxygen generation catalyst. According to such a configuration, oxygen can be generated at a higher reaction rate by the electromotive force generated in the photoelectric conversion unit.
- the catalyst for the reaction of generating O 2 from the electrolyte is a catalyst that promotes the conversion of two water molecules into one molecule of oxygen, four protons, and four electrons, and is chemically stable.
- a material having a small oxygen generation overvoltage can be used.
- oxides or compounds containing Mn, Ca, Zn, Co, which are active centers of Photosystem II, which is an enzyme that catalyzes the reaction of generating oxygen from water using light and platinum such as Pt, RuO 2 , IrO 2
- compounds containing group metals, oxides or compounds containing transition metals such as Ti, Zr, Nb, Ta, W, Ce, Fe, Ni, and combinations of the above materials.
- iridium oxide, manganese oxide, cobalt oxide, and cobalt phosphate can be suitably used because they have low overvoltage and high oxygen generation efficiency.
- the catalyst can be supported on a conductor in order to increase the reaction area and improve the gas generation rate.
- the conductor carrying the catalyst include metal materials, carbonaceous materials, and conductive inorganic materials.
- a promoter When the catalytic activity of the hydrogen generating catalyst and the oxygen generating catalyst alone is small, a promoter can be used. Examples thereof include oxides or compounds of Ni, Cr, Rh, Mo, Co, and Se.
- the method for supporting the hydrogen generating catalyst and the oxygen generating catalyst can be applied directly to a conductor or semiconductor, PVD methods such as vacuum deposition, sputtering, and ion plating, dry coating methods such as CVD,
- the method can be appropriately changed depending on the material such as an analysis method.
- a conductive material can be appropriately supported between the photoelectric conversion unit and the catalyst.
- the reaction surface area is increased by supporting it on porous materials such as metals and carbon, fibrous materials, nanoparticles, etc., and the hydrogen and oxygen generation rates are improved. It is possible to make it.
- the top plate 14 is a material that constitutes a flow path such as an electrolytic solution and confines the generated hydrogen and oxygen, and a highly confidential substance is required. It is not particularly limited whether it is transparent or opaque, but is preferably a transparent material from the viewpoint that hydrogen and oxygen are visible.
- the transparent top plate is not particularly limited, and examples thereof include a transparent rigid material such as quartz glass, Pyrex (registered trademark), and a synthetic quartz plate, a transparent resin plate, and a transparent resin film. Among them, it is preferable to use a glass material because it is a gas that is not chemically permeable and is chemically and physically stable.
- the partition 13 can be provided so as to partition the first gas generation unit 8 and the second gas generation unit 7. Further, the partition wall 13 can be provided so as to partition the space between the first gas generation unit 8 and the top plate 14 and the space between the second gas generation unit 7 and the top plate 14. Thereby, it is possible to prevent the hydrogen and oxygen generated in the first gas generation unit 8 and the second gas generation unit 7 from being mixed, and to separate and recover the hydrogen and oxygen.
- the partition wall 13 may include an ion exchanger. As a result, protons that are unbalanced by the electrolytic solution in the space between the first gas generating unit 8 and the top plate 14 and the electrolytic solution in the space between the second gas generating unit 7 and the top plate 14 are obtained.
- the concentration can be kept constant. That is, the proton concentration can be eliminated through the movement of ions through the partition walls 9.
- the partition wall 13 may be provided so as to be in contact with the top plate 14 as shown in FIG. 2, for example, or may be provided so that a space remains between the top plate 14 and the partition wall 13 as shown in FIG. By providing as shown in FIG. 7, proton imbalance can be more easily eliminated. Further, the partition wall 13 may be provided with holes. This can more easily eliminate proton imbalance. Even if a space is provided between the top plate 14 and the partition wall 13, the hydrogen production apparatus is installed with the light receiving surface of the photoelectric conversion unit 2 facing upward, so that mixing of hydrogen and oxygen can be prevented. Moreover, mixing of hydrogen and oxygen can be prevented by providing a hole near the top plate 14 of the partition wall 13.
- the electrolyte channel 15 between the first gas generator 8 and the top plate 14 and the electrolyte channel 15 between the second gas generator 7 and the top plate 14 are completely separated by the partition wall 13.
- the partition wall 13 can be installed to form a gas flow path as shown in FIG.
- the partition wall 13 can be installed by a lower cost means such as a printing method so that the generated hydrogen and oxygen are not mixed.
- a portion where the substrate 1 and the top plate 14 are joined becomes the sealing material 16.
- the ratio of the hydrogen generation amount and the oxygen generation amount from the electrolytic solution is a 2: 1 molar ratio, and the gas generation amount differs between the first gas generation unit 8 and the second gas generation unit 7.
- the partition wall 13 is made of a material that allows water to pass through in order to keep the water content in the apparatus constant.
- an inorganic film such as porous glass, porous zirconia, or porous alumina or an ion exchanger can be used.
- the ion exchanger any ion exchanger known in the art can be used, and a proton conductive membrane, a cation exchange membrane, an anion exchange membrane, or the like can be used.
- the material of the proton conductive membrane is not particularly limited as long as it is a material having proton conductivity and electrical insulation, and a polymer membrane, an inorganic membrane, or a composite membrane can be used.
- polymer membrane examples include Nafion (registered trademark) manufactured by DuPont, Aciplex (registered trademark) manufactured by Asahi Kasei Co., and Flemion (registered trademark) manufactured by Asahi Glass Co., Ltd., which are perfluorosulfonic acid electrolyte membranes.
- membranes and hydrocarbon electrolyte membranes such as polystyrene sulfonic acid and sulfonated polyether ether ketone.
- Examples of the inorganic film include films made of phosphate glass, cesium hydrogen sulfate, polytungstophosphoric acid, ammonium polyphosphate, and the like.
- Examples of the composite membrane include a membrane made of a sulfonated polyimide polymer, a composite of an inorganic material such as tungstic acid and an organic material such as polyimide, and specifically, Gore Select membrane (registered trademark) or pores manufactured by Gore. Examples thereof include a filling electrolyte membrane.
- a high temperature environment for example, 100 ° C.
- sulfonated polyimide 2-acrylamido-2-methylpropanesulfonic acid (AMPS)
- APMS 2-acrylamido-2-methylpropanesulfonic acid
- sulfonated polybenzimidazole phosphonated polybenzimidazole
- sulfuric acid examples include cesium hydrogen and ammonium polyphosphate.
- the cation exchange membrane may be any solid polymer electrolyte that can move cations.
- fluorine ion exchange membranes such as perfluorocarbon sulfonic acid membranes and perfluorocarbon carboxylic acid membranes, polybenzimidazole membranes impregnated with phosphoric acid, polystyrene sulfonic acid membranes, sulfonated styrene / vinylbenzene copolymers Examples include membranes.
- an anion exchange membrane When the anion transport number of the supporting electrolyte solution is high, it is preferable to use an anion exchange membrane.
- a solid polymer electrolyte capable of transferring anions can be used. Specifically, a polyorthophenylenediamine film, a fluorine-based ion exchange film having an ammonium salt derivative group, a vinylbenzene polymer film having an ammonium salt derivative group, a film obtained by aminating a chloromethylstyrene / vinylbenzene copolymer, etc. Can be mentioned.
- the sealing material 16 is a material for bonding the substrate 1 and the top plate 14 and sealing the electrolyte flowing in the hydrogen production apparatus 23 and the hydrogen and oxygen generated in the hydrogen production apparatus 23.
- an ultraviolet curable adhesive, a thermosetting adhesive, or the like is preferably used, but the type thereof is not limited.
- UV curable adhesives are resins that undergo polymerization when irradiated with light having a wavelength of 200 to 400 nm and undergo a curing reaction within a few seconds after light irradiation, and are classified into radical polymerization type and cationic polymerization type.
- the sealing material 16 is described, but the sealing material 16 is not limited as long as it has a function of bonding the substrate 1 and the top plate 14. Physically using a member such as a screw from the outside using a resin or metal gasket. In addition, it is possible to appropriately use a method of increasing the confidentiality by applying pressure.
- the electrolyte channel 15 can be a space between the first gas generator 8 and the top plate 14 and a space between the second gas generator 7 and the top plate 14. Further, the electrolyte channel 15 can be partitioned by the partition wall 13. For example, a pump, a fan, heat, etc. that circulates the electrolyte in the electrolyte channel so that the generated hydrogen and oxygen bubbles are efficiently separated from the first gas generator 8 or the second gas generator 7. It is also possible to provide a simple device such as a convection generator.
- the water supply port, the first gas discharge port, the second gas discharge port, the first gas discharge channel and the second gas discharge channel The water supply port 18 is formed by making an opening in a part of the sealing material 16 included in the hydrogen production device 23. Can be provided.
- the water supply port 18 is arranged for replenishing water decomposed into hydrogen and oxygen, and the arrangement location and shape thereof are particularly limited as long as water as a raw material is efficiently supplied to the hydrogen production apparatus. Although it is not a thing, it is preferable to install in the hydrogen production apparatus lower part from a viewpoint of fluidity
- the first gas discharge port 20 and the second gas discharge port 19 make an opening in the sealing material 16 in the upper part of the hydrogen production device 23 when the hydrogen production device 23 is installed with the water supply port 18 facing downward. Can be provided. Further, the first gas discharge port 20 may be provided outside one short side of the first gas generation unit, and the second gas discharge port 19 is formed on one short side of the second gas generation unit. It may be provided outside. Moreover, the 1st gas exhaust port 20 and the 2nd gas exhaust port 19 can be provided in the 1st gas generation part 20 side and the 2nd gas generation part 19 side on both sides of the partition 13.
- the hydrogen production device 23 receives light from the photoelectric conversion unit 2. It can be installed so that the surface is inclined with respect to the horizontal plane with the water supply port 18 on the lower side and the first gas discharge port 20 and the second gas discharge port 19 on the upper side. By installing in this way, the electrolytic solution can be introduced into the hydrogen production device 23 from the water supply port 18 and the electrolytic solution flow path 15 can be filled with the electrolytic solution.
- hydrogen and oxygen can be continuously generated in the hydrogen generation unit and the oxygen generation unit, respectively.
- the generated hydrogen and oxygen can be separated by the partition wall 13, and the hydrogen and oxygen can rise to the upper part of the hydrogen production device 23 and can be recovered from the first gas discharge path 25 and the second gas discharge path 26. .
- Electrolytic Solution is an aqueous solution containing an electrolyte, such as an electrolytic solution containing 0.1 M H 2 SO 4 , a 0.1 M potassium phosphate buffer solution, or the like.
- Example 1 The following hydrogen production apparatus as shown in FIGS. 1 to 3 was produced.
- the SnO 2 thin film as the first electrode 4 is provided on the glass substrate as the substrate 1.
- a three-junction photoelectric conversion unit 2 composed of an a-Si layer is laminated on the first electrode 4, and a second electrode 5 of a transparent electrode layer composed of indium tin oxide (ITO) is further formed on the surface. Is provided.
- a hydrogen generation part (first gas generation part 8) carrying the hydrogen generation catalyst 4 is provided on the second electrode 5 while being isolated from the second electrode 5 by an insulating part 11 made of a polyimide film.
- an oxygen generating part (second gas generating part 7) carrying an oxygen generating catalyst is provided from the first electrode 4 through the second conductive part 10 made of Ag paste.
- a plurality of hydrogen generation units and oxygen generation units are arranged in parallel, and are sandwiched between the substrate 1 and the glass top plate 14 so as to have a structure in which the electrolyte flows on the layer where the hydrogen generation unit and the oxygen generation unit are provided.
- a structure in which an electrolytic solution flow path 15 that is a space for flowing an electrolytic solution is provided and a partition wall 13 made of a glass filter is provided between the hydrogen generating portion and the oxygen generating portion so that hydrogen and oxygen are not mixed is configured. Details of the manufacturing process will be described below.
- a glass substrate with U-type tin dioxide (SnO 2 ) manufactured by Asahi Glass Co., Ltd. was used as the substrate 1 and the first electrode 4.
- an a-Si film was formed by plasma CVD.
- a 20 nm-thick a-SiO p layer was formed at a substrate temperature of 150 ° C. using SiH 4 and CO 2 as main gases, B 2 H 6 as a doping gas, and hydrogen as a diluent gas.
- the n-layer of a-SiO was sequentially formed to form a photoelectric conversion layer having a pin junction.
- two more photoelectric conversion layers having pin junctions were formed by the same method, and the photoelectric conversion unit 2 including three photoelectric conversion layers was formed.
- ITO having a film thickness of 200 nm was formed by a sputtering method.
- the formed photoelectric conversion part 2 and the second electrode 5 are a photolithography process, (1) a resist is applied on a silicon thin film, (2) light exposure is performed using a photomask, and a latent image of a mask pattern is formed on the resist. And (3) development to pattern the resist, the thin film was etched, and (4) resist stripping was performed to form a contact hole.
- a material is applied and baked by spin coating to produce a polyimide film. did.
- Ag paste was applied onto the substrate by screen printing, an iridium oxide sheet was placed thereon, and the second conductive portion 10 and the oxygen generation portion were formed in the contact hole by heat treatment.
- Pt was formed on the second electrode 5 by sputtering to produce a hydrogen generating part.
- a porous glass partition wall 9 is disposed between the hydrogen generation catalyst and the oxygen generation catalyst, and the substrate and the top plate, and the substrate / top plate and the partition wall are connected by using an acid-resistant epoxy resin sealing material 13.
- a hydrogen production apparatus according to the present invention was produced.
- Example 2 A hydrogen production apparatus as shown in FIG. 5 was produced under the following conditions. In the same manner as in Example 1, on the substrate 1, the photoelectric conversion unit 2, the second electrode 5, the insulating unit 11, the second conductive unit 10, the oxygen generation unit (second gas generation unit 7), and hydrogen generation Parts (first gas generation part 8) were formed.
- the difference from the first embodiment is that the contact hole provided with the second conductive portion 10 is provided along the long axis direction of the second gas generating portion 7.
- the contact formation by this structure can be made narrower than the width of the second gas generating part 7 connected to the two conductive parts 10, and hydrogen and oxygen can be produced efficiently.
- Example 3 A hydrogen production apparatus as shown in FIG. 7 was produced under the following conditions. In the same manner as in Example 1, on the substrate 1, the photoelectric conversion unit 2, the second electrode 5, the insulating unit 11, the second conductive unit 10, the oxygen generation unit (second gas generation unit 7), and hydrogen generation Parts (first gas generation part 8) were formed. Subsequently, as shown in FIG. 7, the partition wall 13 is thermosetting so that the gas is efficiently collected at a location between the first gas generation unit 8 and the second gas generation unit 7. After the polyimide was produced by the screen printing method, the periphery of the device was sealed with a sealing material for the substrate side material and the top plate material. In this way, a hydrogen production apparatus was produced.
- Example 4 A hydrogen production apparatus as shown in FIG. 6 was produced under the following conditions. In the same manner as in Example 1, on the substrate 1, the photoelectric conversion unit 2, the second electrode 5, the insulating unit 11, the second conductive unit 10, the oxygen generation unit (second gas generation unit 7), and hydrogen generation Parts (first gas generation part 8) were formed.
- the difference from the first embodiment is that the widths of the first gas generation unit 8 and the second gas generation unit 7 are different. When one molecule of water is electrolyzed, hydrogen is generated at a ratio of 1 molecule and oxygen is generated at a ratio of 0.5 molecule. Therefore, it is possible to change the width of the catalyst layer according to the catalyst activity and the amount of supported catalyst to achieve a balance. It was.
- Example 5 In the hydrogen production apparatus produced in Example 1, the oxygen generation unit was produced as follows. PH 7 and 0.1M potassium phosphate buffer and 0.5mM cobalt nitrate on the cathode side of a glass electrochemical cell with a glass filter as a partition, and pH 7 and 0.1M potassium phosphate buffer on the anode side. I put it in. Porous carbon is immersed in the cathode electrolyte, Pt mesh is immersed in the anode electrolyte, the electrodes are electrically connected, and then a phosphoric acid is electrochemically applied by applying a potential of 1.29 V (vs NHE). Cobalt was supported on porous carbon.
- the oxygen generation catalyst thus prepared in the second gas generation unit 7 of the hydrogen production apparatus of Example 1, it is possible to manufacture an apparatus having a larger surface area and an improved oxygen generation rate. became.
- Example 6 The hydrogen production apparatus produced in Example 1 was installed obliquely so that sunlight was incident in a direction perpendicular to the light receiving surface. An electrolyte containing 0.1 M H 2 SO 4 was injected from the water supply port 18 to the vicinity of the first gas outlet 20 and the second gas outlet 19 and irradiated with sunlight. It is confirmed by gas chromatography that hydrogen and oxygen are generated from the gas generator 8 and the second gas generator 7, respectively, and that hydrogen is discharged from the first gas outlet 20 and oxygen is discharged from the first gas outlet 20. did.
- Example 7 A hydrogen production apparatus in which the oxygen generation catalyst produced in Example 5 was formed in the second gas generation unit 7 was installed obliquely so that sunlight was incident in a direction perpendicular to the light receiving surface.
- the electrolyte surface containing the pH 7, 0.1M potassium phosphate buffer solution was injected from the water supply port 18 to the vicinity of the first gas discharge port 20 and the second gas discharge port 19 and irradiated with sunlight,
- the gas chromatography indicates that hydrogen and oxygen are generated from the first gas generation unit 8 and the second gas generation unit 7 respectively, and that hydrogen is discharged from the first gas discharge port 20 and oxygen is discharged from the first gas discharge port 20. Confirmed. As a result, it was confirmed that hydrogen could be produced using a neutral electrolyte.
- the hydrogen production apparatus of the present invention is used as an energy creation apparatus that decomposes water by using solar energy to produce hydrogen and oxygen. Hydrogen can be produced on-site at home, hydrogen stations, and large-scale hydrogen production plants.
- Second conductive unit 11 Insulation section 13: partition wall 14: top plate 15: electrolyte flow path 16: sealant 18: water supply port 19: second gas discharge port 20: first gas discharge port 23: hydrogen production device 25: first gas discharge channel 26 : Second gas discharge path 28: photoelectric conversion layer 30: translucent electrode 31: back electrode 33: third conductive part 35: semiconductor region 36: p-type semiconductor region 37: n-type semiconductor region 40: isolation 42: Trench isolation 44: Fifth conductive part 45: Fourth conductive part
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Abstract
Description
本発明は、このような事情に鑑みてなされたものであり、光利用効率が高く、高効率で水素を製造することができ、水素発生速度が低下しない水素製造装置を提供する。
また、本発明によれば、光電変換部の裏面上に水素発生部および酸素発生部を設けるため、受光面に入射する光が、水素発生部および酸素発生部、ならびにそこからそれぞれ発生する水素及び酸素により吸収や散乱されることはない。このことにより、光電変換部へ入射光の量を多くすることができ、光利用効率を高くすることができる。
また、本発明によれば、光電変換部と、水素発生部および酸素発生部とが同一の装置に設けられているため、従来の太陽電池と水の電気分解装置を組み合わせるよりも、水素製造コストを低下させることができる。
また、本発明によれば、第1の気体発生部および第2の気体発生部は、少なくとも一方が複数である。このことにより第1の気体発生部と第2の気体発生部とが隣接する部分が増加し、第1の気体発生部付近の電解液と第2の気体発生部付近の電解液との間のプロトンがイオン伝導する距離を短くすることができる。また、このプロトンがイオン伝導する電解液またはイオン交換体のプロトン伝導経路が多くすることができ、プロトン伝導領域の比率を大きくすることができる。この結果、伝導プロトンの濃度を小さくすることができる。
このことにより、プロトンが第1の気体発生部付近の電解液と第2の気体発生部付近の電解液において移動しやすくなり、プロトン濃度の不均衡を小さくすることができる。その結果、水素発生速度の低下を防止することができる。さらに、水素製造装置を大型化し、製造する水素量が多くなった場合でも、プロトン濃度の不均衡による水素発生速度の低下を防止することができる。また、第1の気体発生部付近の電解液と第2の気体発生部付近の電解液との間のプロトンの移動は、水素発生反応の律速となる場合があるため、プロトンを移動しやすくできることにより、水素発生反応の速度を最大限に高めることができる。
光電変換部とは、光を受光し起電力が生じる部分である。
受光面とは、光が入射する光電変換部の面である。
裏面とは、受光面の裏の面である。
このような構成によれば、第1の気体発生部付近の電解液と第2の気体発生部付近の電解液との間のプロトンがイオン伝導する距離をより短くすることができる。
本発明の水素製造装置において、第1の気体発生部と第2の気体発生部との間に隔壁をさらに備えることが好ましい。
このような構成によれば、第1の気体発生部および第2の気体発生部でそれぞれ発生した水素および酸素を分離することができ、水素をより効率的に回収することができる。
本発明の水素製造装置において、隔壁は、第1の気体発生部と第2の気体発生部とを仕切るように設けられることが好ましい。
このような構成によれば、水素をより効率的に回収することができる。
このような構成によれば、第1の気体発生部付近の電解液と第2の気体発生部付近の電解液との間のプロトンがイオン伝導する距離をより短くすることができる。また、第1の気体発生部および第2の気体発生部を形成する領域を広くすることができ、水素発生量をより多くすることができる。また、実質的に長方形とし、かつ、隔壁を挟んで設けることにより、発生させた水素または酸素を容易に回収することができる。
本発明の水素製造装置において、第1の気体発生部の一方の短辺の外側に設けられた第1ガス排出口と、第2の気体発生部の一方の短辺の外側に設けられた第2ガス排出口とをさらに備えることが好ましく、第1ガス排出口および第2ガス排出口は並んで設けられることが好ましい。
このような構成によれば、発生させた水素または酸素を容易に回収することができる。
このような構成によれば、発生させた水素または酸素をより容易に回収することができ、利便性を高くすることができる。
本発明の水素製造装置において、隔壁は、イオン交換体を含むことが好ましい。
このような構成によれば、第1の気体発生部の上部の空間に導入された電解液と第2の気体発生部の上部の空間に導入された電解液との間のプロトン濃度の不均衡を解消することができ、安定して水素および酸素を発生させることができる。
本発明の水素製造装置において、第1の気体発生部は、前記光電変換部の裏面と電気的に接続し、第2の気体発生部は、第1の導電部を介して前記光電変換部の受光面と電気的に接続したことが好ましい。
このような構成によれば、光電変換部の受光面に光を入射させることにより光電変換部に起電力を生じさせることができ、受光面と裏面との間に電位差が生じさせることができる。このことにより、光電変換部の裏面と電気的に接続した第1の気体発生部と、光電変換部の受光面と第1の導電部を介して電気的に接続した第2の気体発生部との間も電位差を生じさせることができる。この電位差が生じた第1の気体発生部と第2の気体発生部とに電解液を接触させることにより、第1の気体発生部と第2の気体発生部のうち、どちらか一方で電解液からH2を発生させることができ、他方で電解液からO2を発生させることができる。この発生したH2を回収することにより水素を製造することができる。
また、光電変換部を全面にわたり均一な材料による構造とすることができる。このため、光電変換部の受光面を広くすることができ、また、水素製造装置の製造コストを低下させることができる。
このような構成によれば、第2の気体発生部と光電変換部の裏面との間にリーク電流が流れることを防止することができる。
本発明の水素製造装置において、前記光電変換部の裏面と第1の気体発生部との間に設けられた第2電極をさらに備えることが好ましい。
このような構成によれば、光電変換部の起電力により光電変換部の裏面と第1の気体発生部と間に流れる電流を大きくすることができ、より効率的に水素または酸素を発生させることができる。
このような構成によれば、光電変換部と電解液との接触を防止することができ、電解液による光電変換部の腐食を防止することができる。
本発明の水素製造装置において、前記絶縁部は、前記光電変換部の側面を覆うように設けられたことが好ましい。
このような構成によれば、側面を覆う絶縁部の上に第2の導電部または第2の気体発生部を形成することができ、第2の導電部または第2の気体発生部を第1電極に接触するように設けることができる。
本発明の水素製造装置において、第1の導電部は、前記光電変換部の受光面に接触する第1電極と、第1電極および第2の気体発生部にそれぞれ接触する第2の導電部とを含むことが好ましい。
このような構成によれば、光電変換部の受光面と第2の気体発生部を電気的に接続させることができ、より効率的に水素または酸素を発生させることができる。
このような構成によれば、第1電極と第2の気体発生部を電気的に接続させることができ、第2の導電部を設けたことによる光電変換部の受光面の面積の減少を少なくすることができる。
本発明の水素製造装置において、第2の導電部は、前記光電変換部の受光面と平行な断面を有し、該断面は、第1の気体発生部および第2の気体発生部の列方向と平行な細長い形状を有することが好ましい。
このような構成によれば、光電変換部の受光面と第2の気体発生部との間の電荷の移動に伴う電位の低下をより小さくすることができる。
このような構成によれば、光電変換部にコンタクトホールを形成することなく、第2の気体発生部と光電変換部の受光面を電気的に接続することができ、製造コストを低減することができる。
本発明の水素製造装置において、第1の導電部は、前記光電変換部の受光面に接触する第1電極からなり、第1電極は、第2の気体発生部と接触することが好ましい。
このような構成によれば、光電変換部の受光面と第2気体発生部との間の電位差をより小さくすることができる。
このような構成によれば、光電変換部にコンタクトホールを形成することなく、第2の気体発生部と光電変換部の受光面を電気的に接続することができ、製造コストを低減することができる。
本発明の水素製造装置において、前記光電変換部は、透光性を有する基板の上に設けられることが好ましい。
このような構成によれば、基板上に形成する必要がある光電変換部を本発明の水素製造装置に適用することができる。また、本発明の水素製造装置を取り扱いやすくすることができる。
このような構成によれば、光電変換部がpin構造を有することができ、効率よく光電変換をすることができる。また、光電変換部で生じる起電力をより大きくすることができ、電解液をより効率的に電気分解することができる。
本発明の水素製造装置において、前記光電変換部は、直列接続した複数の光電変換層を含み、前記複数の光電変換層は、受光することにより生じる起電力を第1の気体発生部および第2の気体発生部に出力することが好ましい。
このような構成によれば、光電変換部2は水を分解し水素を発生させることができる起電力を発生させることができる。
本発明の水素製造装置において、各光電変換層は、第3の導電部により直列接続されたことが好ましい。
このような構成によれば、各光電変換層を並べて設けることができる。
本発明の水素製造装置において、第3の導電部は、前記光電変換層の受光面側に設けられた透光性電極と、前記光電変換層の裏面側に設けられた裏面電極とを含むことが好ましい。
このような構成によれば、並べて設けられた各光電変換層を直列接続することができる。
このような構成によれば、光電変換部が受光することにより生じる起電力を第2の気体発生部に出力するときに内部抵抗をより小さくすることができる。
本発明の水素製造装置において、前記光電変換部の裏面と第1の気体発生部との間の一部に設けられた絶縁部と、前記絶縁部と第1の気体発生部との間に設けられた第5の導電部とをさらに備えることが好ましい。
このような構成によれば、光電変換部が受光することにより生じる起電力を第1の気体発生部に出力するときに内部抵抗をより小さくすることができる。
本発明の水素製造装置において、前記水素発生部および前記酸素発生部は、それぞれ電解液からH2が発生する反応の触媒および電解液からO2が発生する反応の触媒を含むことが好ましい。
このような構成によれば、水素発生部における電解液からH2が発生する反応の反応速度を増大させることができ、酸素発生部における電解液からO2が発生する反応の反応速度を増大させることができる。このことにより、光電変換部で生じた起電力により、より効率的にH2を製造することができ、光の利用効率を向上させることができる。
本発明の水素製造装置において、水素発生部および酸素発生部のうち少なくとも一方は、触媒が担持された多孔質の導電体であることが好ましい。
このような構成によれば、第1の気体発生部および第2の気体発生部のうち少なくとも一方の触媒表面積を大きくすることができ、より効率的に酸素または水素を発生させることができる。また、多孔質の導電体を用いることにより、光電変換部と触媒との間の電流が流れることによる電位の変化を抑制することができ、より効率的に水素または酸素を発生させることができる。
このような構成によれば、第1の気体発生部および第2の気体発生部と前記天板との間に電解液を導入することができ、第1の気体発生部および第2の気体発生部において電解液からより効率的にH2およびO2が発生させることができる。
このような構成によれば、第1の気体発生部および第2の気体発生部でそれぞれ発生した水素および酸素を分離することができ、水素をより効率的に回収することができる。
本発明の水素製造方法によれば、太陽光を利用して、低コストで水素を製造することができる。
図1は本発明の一実施形態の水素製造装置の構成を示し、光電変換部の受光面側から見た概略平面図である。図2は、図1の点線A-Aの概略断面図である。図3は、本発明の一実施形態の水素製造装置の構成を示し、光電変換部の裏面側から見た概略裏面図である。また、図9は、本発明の一実施形態の水素製造装置の構成を示し、光電変換部の受光面側から見た概略平面図であり、図10は、図9の点線B-Bの概略断面図である。
以下、本実施形態の水素製造装置について説明する。
基板1は、本実施形態の水素製造装置23が備えてもよい。また、光電変換部2は、受光面が基板1側となるように透光性の基板1の上に設けられてもよい。なお、光電変換部2が、半導体基板などからなり一定の強度を有する場合、基板1は省略することが可能である。また、光電変換部2が樹脂フィルムなど柔軟性を有する材料の上に形成可能な場合、基板1は省略することができる。
光透過率が高い基板材料として、例えば、ソーダガラス、石英ガラス、パイレックス(登録商標)、合成石英板等の透明なリジッド材、あるいは透明樹脂板やフィルム材等が好適に用いられる。化学的および物理的安定性を備える点より、ガラス基板を用いることが好ましい。
基板1の光電変換部2側の表面には、入射した光が光電変換部2の表面で有効に乱反射されるように、微細な凹凸構造に形成することができる。この微細な凹凸構造は、例えば反応性イオンエッチング(RIE)処理もしくはブラスト処理等の公知の方法により形成することが可能である。
第1の導電部9は、第2の気体発生部7と光電変換部2の受光面とを電気的に接続させる。また、第1の導電部9は、1つの部材からなってもよく、第1電極4と第2の導電部10からなってもよい。第1の導電部9を設けることにより、光電変換部2の受光面の電位と第2の気体発生部7の電位をほぼ同じにすることができ、第2の気体発生部7で水素または酸素を発生させることができる。
第1の導電部9が1つの部材からなる場合としては、例えば、光電変換部2の受光面と第2の気体発生部7を電気的に接続させる金属配線などである。また、例えば、Agからなる金属配線である。また、この金属配線は、光電変換部2に入射する光を減少させないように、フィンガー電極のような形状を有してもよい。第1の導電部9は、基板1の光電変換部2側に設けられてもよく、光電変換部2の受光面に設けられてもよい。また、第1の導電部9を例えば図10~13のように、第1電極4とし、第2の気体発生部7を第1電極4と接触するように設けてもよい。
第1電極4は、基板1の上に設けることができ、光電変換部2の受光面と接触するように設けることができる。また、第1電極4は透光性を有してもよい。また、第1電極4は、基板1を省略可能の場合、光電変換部2の受光面に直接設けられてもよい。第1電極4を設けることにより、光電変換部2の受光面と第2の気体発生部7との間に流れる電流を大きくすることができる。第1電極4は、図2のように光電変換部2の受光面全面上に設けられてもよく、図11、13のように光電変換部2の受光面の一部の上のみに設けられてもよい。
第1電極4は、例えば、ITO、SnO2などの透明導電膜からなってもよく、Ag、Auなどの金属のフィンガー電極からなってもよい。
透明導電膜は、光電変換部2の受光面と第2の気体発生部7とのコンタクトを取りやすくするために用いている。
一般に透明電極として使用されているものを用いることが可能である。具体的にはIn-Zn-O(IZO)、In-Sn-O(ITO)、ZnO-Al、Zn-Sn-O、SnO2等を挙げることができる。なお本透明導電膜は、太陽光の光線透過率が85%以上、中でも90%以上、特に92%以上であることが好ましい。このことにより光電変換部2が光を効率的に吸収することができるためである。
透明導電膜の作成方法としては公知の方法を用いることができ、スパッタリング、真空蒸着、ゾルゲル法、クラスタービーム蒸着法、PLD(Pulse Laser Deposition)法などが挙げられる。
光電変換部2は、受光面および裏面を有し、光電変換部2の裏面の上に第1の気体発生部8と第2の気体発生部7が並列に設けることができる。なお、受光面とは、光電変換するための光を受光する面であり、裏面とは、受光面の裏の面である。また、光電変換部2は、第1電極4が設けられた基板1の上に受光面を下にして設けることができる。
光電変換部2の形は、特に限定されないが、例えば、実質的に方形である。光電変換部2が実質的に方形の場合、光電変換部の一辺と平行に、一定の幅を有する第1の気体発生部8と一定の幅を有する第2の気体発生部7を並列に並べることができる。この場合、第1の気体発生部8と第2の気体発生部7の並んだ方向の光電変換部2の幅は、例えば、50cm以上200cm以下である。このことにより、水素製造装置を大型化することができ、水素発生量を多くすることができる。また、第1の気体発生部8と第2の気体発生部7の並んだ方向に垂直な方向の光電変換部2の幅は、例えば、50cm以上200cm以下である。
光電変換部2は、受光面と裏面との間に起電力が生じるものでもよい。また、図14~図18に示めすように、光電変換部の一方の面の2つの異なる領域間で起電力が生じるものであってもよい。このような光電変換部2は、例えば、図14~図18のようなn型半導体領域とp型半導体領域を形成した半導体基板などにより形成することができる。
光電変換部2は、図11、13、15、17、18のように、並べて形成した光電変換層35を第3の導電部33により直列接続したものであってもよい。また、光電変換層35が受光面側と裏面側との間に起電力が生じる場合、図11、13のように光電変換層35の受光面側に設けた透光性電極30と光電変換層35の裏面側に設けた裏面電極31とを電気的に接続することにより第3の導電部33を形成することができる。なお、透光性電極30は、第1電極4と同様の方法に形成することが可能である。また、基板1上にCVD法またはスパッタリング法により透光性導電膜を形成し、透光性導電膜をレーザスクライブ加工することにより、第1電極4と透光性電極3を同時に形成することもできる。裏面電極31は、第2電極5と同様の方法で形成可能である。また、透光性電極30と裏面電極31とを電気的に接続する方法は、例えば、光電変換層35にコンタクトホールを形成する方法であってもよく、裏面電極31の一部が透光性電極30の一部の上に形成する方法であってもよい。
また、光電変換層35が裏面側の異なる領域間に起電力を生じさせる場合、図15、17、18のように第3の導電部33を形成することができる。
光電変換部2の例を以下に具体的に説明する。また、光電変換部2は、これらを組み合わせたものでもよい。また、以下の光電変換部2の例は、矛盾しない限り光電変換層35とすることもできる。
シリコン系半導体を用いた光電変換部2は、例えば、単結晶型、多結晶型、アモルファス型、球状シリコン型、及びこれらを組み合わせたもの等が挙げられる。いずれもp型半導体とn型半導体が接合したpn接合を有することができる。また、p型半導体とn型半導体との間にi型半導体を設けたpin接合を有するものとすることもできる。また、pn接合を複数有するもの、pin接合を複数有するもの、pn接合とpin接合を有するものとすることもできる。
シリコン系半導体とは、シリコンを含む半導体であり、例えば、シリコン、シリコンカーバイド、シリコンゲルマニウムなどである。また、シリコンなどにn型不純物またはp型不純物が添加されたものも含み、また、結晶質、非晶質、微結晶のものも含む。
また、シリコン系半導体を用いた光電変換部2は、基板1の上に形成された薄膜または厚膜の光電変換層であってもよく、また、シリコンウェハなどのウェハにpn接合またはpin接合を形成したものでもよく、また、pn接合またはpin接合を形成したウェハの上に薄膜の光電変換層を形成したものでもよい。
基板1上に積層した第1電極4上に、第1導電型半導体層をプラズマCVD法等の方法で形成する。この第1導電型半導体層としては、導電型決定不純物原子濃度が1×1018~5×1021/cm3程度ドープされた、p+型またはn+型の非晶質Si薄膜、または多結晶あるいは微結晶Si薄膜とする。第1導電型半導体層の材料としては、Siに限らず、SiCあるいはSiGe,SixO1-x等の化合物を用いることも可能である。
シリコン基板としては、単結晶シリコン基板または多結晶シリコン基板などを用いることができ、p型であっても、n型であっても、i型であってもよい。このシリコン基板の一部にPなどのn型不純物を熱拡散またはイオン注入などによりドープすることによりn型半導体領域37を形成し、シリコン基板のほかの一部にBなどのp型不純物を熱拡散またはイオン注入などによりドープすることによりp型半導体領域36を形成することができる。このことにより、シリコン基板にpn接合、pin接合、npp+接合またはpnn+接合などを形成することができ、光電変換部2を形成することができる。
なお、ここではシリコン基板を用いて説明したが、pn接合、pin接合、npp+接合またはpnn+接合などを形成することができる他の半導体基板を用いてもよい。また、n型半導体領域37およびp型半導体領域36を形成することができれば、半導体基板に限定されず、基板上に形成された半導体層であってもよい。
化合物半導体を用いた光電変換部は、例えば、III-V族元素で構成されるGaP、GaAsやInP、InAs、II-VI族元素で構成されるCdTe/CdS、I-III-VI族で構成されるCIGS(Copper Indium Gallium DiSelenide)などを用いpn接合を形成したものが挙げられる。
色素増感剤を利用した光電変換部は、例えば、主に多孔質半導体、色素増感剤、電解質、溶媒などにより構成される。
多孔質半導体を構成する材料としては、例えば、酸化チタン、酸化タングステン、酸化亜鉛、チタン酸バリウム、チタン酸ストロンチウム、硫化カドミウム等公知の半導体から1種類以上を選択することが可能である。多孔質半導体を基板上に形成する方法としては、半導体粒子を含有するペーストをスクリーン印刷法、インクジェット法等で塗布し乾燥もしくは焼成する方法や、原料ガスを用いたCVD法等により製膜する方法、PVD法、蒸着法、スパッタ法、ゾルゲル法、電気化学的な酸化還元反応を利用した方法等が挙げられる。
酸化還元対としては一般に、鉄系、コバルト系等の金属類や塩素、臭素、ヨウ素等のハロゲン物質が好適に用いられ、ヨウ化リチウム、ヨウ化ナトリウム、ヨウ化カリウム等の金属ヨウ化物とヨウ素の組み合わせが好ましく用いられる。さらに、ジメチルプロピルイミダゾールアイオダイド等のイミダゾール塩等を混入することもできる。
有機薄膜を用いた光電変換部は、電子供与性および電子受容性を持つ有機半導体材料で構成される電子正孔輸送層、または電子受容性を有する電子輸送層と電子供与性を有する正孔輸送層とが積層されたものであってもよい。
電子供与性の有機半導体材料としては、電子供与体としての機能を有するものであれば特に限定されないが、塗布法により製膜できることが好ましく、中でも電子供与性の導電性高分子が好適に使用される。
電子受容性の導電性高分子としては、例えばポリフェニレンビニレン、ポリフルオレン、およびこれらの誘導体、共重合体、あるいはカーボンナノチューブ、フラーレンおよびこれらの誘導体、CN基またはCF3基含有ポリマーおよびそれらの-CF3置換ポリマー等が挙げられる。
第2電極5は、光電変換部2と第1の気体発生部8との間に設けることができる。第2電極5を設けることにより、光電変換部2の裏面の電位と第1の気体発生部8の電位をほぼ同じにすることができる。また、光電変換部2の裏面と第1の気体発生部8との間のオーミックロスを低減することができる。また、光電変換部2の裏面と第1の気体発生部8との間に流れる電流を大きくすることができる。このことにより、光電変換部2で生じた起電力により水素または酸素をより効率的に発生させることができる。なお、光電変換部2の裏面と第1の気体発生部8とを電気抵抗を小さくコンタクトすることが可能である場合、第2電極5は、省略することが可能である。また、第2電極5は、電解液に対する耐食性および電解液に対する遮液性を有することが好ましい。このことにより、電解液による光電変換部2の腐食を防止することができる。
第2電極5は、導電性を有すれば特に限定されないが、例えば、金属薄膜であり、また、例えば、Al、Ag、Auなどの薄膜である。これらは、例えば、スパッタリングなどにより形成することができる。また、例えば、In-Zn-O(IZO)、In-Sn-O(ITO)、ZnO-Al、Zn-Sn-O、SnO2等の透明導電膜である。
絶縁部11は、光電変換部2の裏面と第2の気体発生部7との間に設けることができる。また、絶縁部11は、第1の気体発生部8と第2の気体発生部7との間に設けることもできる。さらに、絶縁部11は、第1の導電部9と光電変換部2との間、第2の導電部10と光電変換部2との間、および第2導電部10と第2電極5との間に設けることができる。
絶縁部11を設けることにより、光電変換部2で生じた起電力により、光電変換部2の受光面と第2の気体発生部7との間に電流を流し、光電変換部2の裏面と第1の気体発生部8との間に電流を流すことができる。また、リーク電流をより小さくすることができる。このことにより、光電変換部2の受光面の電位と第2の気体発生部7の電位をほぼ同じにすることができ、また、光電変換部2の裏面の電位と第1の気体発生部8の電位をほぼ同じにすることができ、より効率的に水素および酸素を発生させることができる。
また、光電変換部2が図14~18のように、光電変換部2の裏面の異なる領域間で起電力を生じさせる場合、絶縁部11は、第1の気体発生部8および第2の気体発生部7と光電変換部2の裏面との間に設けることができ、第1の気体発生部8と光電変換部2の裏面の一部とを電気的に接続させるための開口および第2の気体発生部7と光電変換部2の裏面の一部とを電気的に接続させるための開口を有することができる。
また、絶縁部11と第1の気体発生部8との間に設けられた第5の導電部44を備えることができる。また、絶縁部11と第2の気体発生部7との間に設けられた第4の導電部45を備えることができる。このことにより、内部抵抗を低減することができる。例えば、図11、図14のように第5の導電部44および第4の導電部45を設けることができる。
また、絶縁部11は、電解液に対する耐食性および電解液に対する遮液性を有することが好ましい。このことにより、電解液による光電変換部2の腐食を防止することができる。
第2の導電部10は、第1電極4と第2の気体発生部7とにそれぞれ接触するように設けることができる。第2の導電部10を設けることにより、容易に光電変換部2の受光面に接触した第1電極4と第2の気体発生部7とを電気的に接続することができる。
第2の導電部10は光電変換部2の受光面と接触した第1電極4と光電変換部2の裏面上に設けられた第2の気体発生部7とに接触するため、光電変換部2の受光面と平行な第2導電部の断面積を大きくしすぎると、光電変換部2の受光面の面積を小さくすることにつながる。また、光電変換部2の受光面に平行な第2の導電部10の断面積を小さくしすぎると光電変換部2の受光面の電位と第2の気体発生部7の電位との間に差が生じ、電解液を分解する電位差が得られなくなる場合もあり、水素または酸素の発生効率の減少につながる場合もある。従って、光電変換部2の受光面と平行な第2導電部の断面積は、一定の範囲である必要がある。例えば、光電変換部2の受光面と平行な第2導電部の断面積(第2導電部が複数の場合、その断面積の総計)は、光電変換部2の受光面の面積を100%としたとき、0.1%以上10%以下とすることができ、好ましくは、0.5%以上8%以下、さらに好ましくは、1%以上6%以下とすることができる。
また、第2の導電部10が設けられたコンタクトホールは、1つまたは複数でもよく、円形の断面を有してもよい。また、光電変換部2の受光面と平行なコンタクトホールの断面積(コンタクトホールが複数の場合、その断面積の総計)は、光電変換部2の受光面の面積を100%としたとき、0.1%以上10%以下とすることができ、好ましくは、0.5%以上8%以下、さらに好ましくは、1%以上6%以下とすることができる。このような構成によれば、第2の導電部を設けたことによる光電変換部の受光面の面積の減少を少なくすることができる。
また、第2の導電部10は、図4のように光電変換部2を貫通するコンタクトホールに設けられた部分と第2の気体発生部7と絶縁部11との間に設けられた部分からなってもよい。このことにより、第2の気体発生部7と第2の導電部10との電気的な接続が十分となり、光電変換部2の受光面と第2の気体発生部7との電位をほぼ同じにすることができる。また、第2の気体発生部7に導電率が低い触媒などを用いることができる。
また、第2の導電部10は、光電変換部2が形成されていない領域に設けられてもよい。
さらに、第2の導電部10は、光電変換部2の側面を覆うように設けられてもよい。
第1の気体発生部8は、光電変換部2の裏面の上に設けられる。このことにより、第1の気体発生部8は光電変換部2に入射する光を遮ることはない。また、第1の気体発生部8は、水素発生部および酸素発生部のいずれか一方であり、光電変換部2の裏面と電気的に接続することができる。光電変換部2と第1の気体発生部8との間で効率よく電子伝達を行うために、光電変換部2と第1の気体発生部8との間に第5の導電部44を備えることも可能である。このことにより、光電変換部2の裏面の電位と第1の気体発生部8の電位をほぼ同じとすることができ、光電変換部2で生じた起電力により水素または酸素を発生させることができる。また、第1の気体発生部8は、複数であり、第2の気体発生部7と交互に並列に並ぶように設けられてもよい。このことにより、第1の気体発生部8と第2の気体発生部7との境界部を多くすることができ、第1の気体発生部8付近の電解液と第2の気体発生部7付近の電解液の距離を短くすることができる。また、第1の気体発生部8付近の電解液と第2の気体発生部7付近の電解液との間のプロトン濃度の不均衡を解消しようとするプロトンの移動を容易にすることができる。このことにより、プロトン濃度の不均衡による水素発生速度の低下を防止することができる。
第2の気体発生部7は、光電変換部2の裏面の上に設けられる。このことにより、第2の気体発生部7は光電変換部2に入射する光を遮ることはない。また、第2の気体発生部7は、水素発生部および酸素発生部のいずれか一方であり、光電変換部2の受光面と第1の導電部9を介して電気的に接続することができる。このことにより、光電変換部2の受光面の電位と第2の気体発生部7の電位をほぼ同じにすることができ、光電変換部2で生じた起電力により水素または酸素を発生させることができる。光電変換部2と第2の気体発生部7の間で効率よく電子伝達を行うために、光電変換部2と第2の気体発生部7との間に第4の気体発生部45を備えることも可能である。
また、第2の気体発生部7は、第1電極4と接触するように設けることもできる。このことにより光電変換部2の受光面の電位と第2の気体発生部7の電位をほぼ同じにすることができる。例えば、図10、12、13のように、光電変換部2の側面を絶縁部11で覆い、その上に光電変換部2の側面を覆うように第2の気体発生部7を設けることができる。このことにより、コンタクトホールを形成することなく第2の気体発生部7と光電変換部2の受光面とを電気的に接続することができる。また、図11のように、第1電極4と第2の気体発生部7との間に第2の導電部10を設けてもよい。このことにより、内部抵抗を低減することができる。
また、第1の気体発生部8の幅は、第2の気体発生部8の幅を100としたとき、50以上200以下であってもよく、50以上80以下および120以上200以下であってもよい。このような構成によれば、第1の気体発生部および第2の気体発生部のうち、水素発生部となる方の幅を酸素発生部となる方の幅より広くすることができ、水素と酸素の発生量の違いによる水素発生速度の低下を防止することができる。
また、第1の気体発生部および第2の気体発生部のうち少なくとも一方は、触媒が担持された多孔質の導電体であることが好ましい。このような構成によれば、第1の気体発生部および第2の気体発生部のうち少なくとも一方の触媒表面積を大きくすることができ、より効率的に酸素または水素を発生させることができる。また、多孔質の導電体を用いることにより、光電変換部と触媒との間の電流が流れることによる電位の変化を抑制することができ、より効率的に水素または酸素を発生させることができる。
水素発生部は、電解液からH2を発生させる部分であり、第1の気体発生部8および第2の気体発生部7のうちどちらか一方である。なお、水素発生部付近の電解液から水素が発生するため、この電解液のプロトン濃度は減少すると考えられる。このプロトン濃度の低下は、酸素発生部付近の電解液との間で、プロトン伝導が生じることにより解消される。
酸素発生部は、電解液からO2を発生させる部分であり、第1の気体発生部8および第2の気体発生部7のうちどちらか一方である。なお、酸素発生部付近の電解液から酸素が発生するため、この電解液のプロトン濃度は増加すると考えられる。このプロトン濃度の増加は、水素発生部付近の電解液との間で、プロトン伝導が生じることにより解消される。
天板14は、第1の気体発生部8および第2の気体発生部7の上に基板1と対向するように設けることができる。また、天板14は、第1の気体発生部8および第2の気体発生部7と天板14との間に空間が設けられるように設けることができる。
隔壁13は、第1の気体発生部8と第2の気体発生部7とを仕切るように設けることができる。また、隔壁13は、第1の気体発生部8と天板14との間の空間および第2の気体発生部7と天板14との間の空間とを仕切るように設けることができる。このことにより、第1の気体発生部8および第2の気体発生部7で発生させた水素および酸素が混合することを防止することができ、水素および酸素を分離して回収することができる。
また、隔壁13は、イオン交換体を含んでもよい。このことにより、第1の気体発生部8と天板14との間の空間の電解液と第2の気体発生部7と天板14との間の空間の電解液でアンバランスとなったプロトン濃度を一定に保つことができる。つまり、プロトンが隔壁9を介してイオンの移動が起こることによりプロトン濃度のアンバランスを解消することができる。
隔壁9は、光電変換部2の裏面と平行な帯状の断面を有してもよく、この断面は、1cm以上5cm以下の幅を有してもよい。また、1cm以上3cm以下の幅を有してもよい。このような構成によれば、発生させた水素および酸素をより効率的に回収することができ、かつ、第1の気体発生部と第2の気体発生部との間隔をより短くすることができ、プロトン濃度の不均衡をより小さくすることができる。
イオン交換体としては、当該分野で公知のイオン交換体をいずれも使用でき、プロトン伝導性膜、カチオン交換膜、アニオン交換膜等を使用できる。
水素発生、酸素発生がそれぞれ水素発生触媒、酸素発生触媒にて選択的に行われ、これに伴うイオンの移動が起こる場合、必ずしもイオン交換のための特殊な膜等の部材を配置する必要はない。ガスを物理的に隔離することのみの目的であれば、後述のシール材に記載の紫外線硬化性樹脂あるいは熱硬化性樹脂を用いることが可能である。
シール材16は、基板1と天板14を接着し、水素製造装置23内を流れる電解液および水素製造装置23内で生成した水素および酸素を密閉するための材料である。シール材16は、例えば、紫外線硬化性接着剤、熱硬化性接着剤等が好適に使用されるが、その種類は限定されるものではない。紫外線硬化性の接着剤としては、200~400nmの波長を持つ光を照射することにより重合が起こり光照射後数秒で硬化反応が起こる樹脂であり、ラジカル重合型とカチオン重合型に分けられ、ラジカル重合型樹脂としてはアクリルレート、不飽和ポリエステル、カチオン重合型としては、エポキシ、オキセタン、ビニルエーテル等が挙げられる。また熱硬化性の高分子接着剤としては、フェノール樹脂、エポキシ樹脂、メラミン樹脂、尿素樹脂、熱硬化性ポリイミド等の有機樹脂が挙げられる。熱硬化性の高分子接着剤は、熱圧着時に圧力を掛けた状態で加熱重合し、その後、加圧したまま、室温まで冷却することにより、各部材を良好に接合させるため、締め付け部材等を要しない。また、有機樹脂に加えて、ガラス基板に対して密着性の高いハイブリッド材料を用いることが可能である。ハイブリッド材料を用いることによって、弾性率や硬度等の力学的特性が向上し、耐熱性や耐薬品性が飛躍的に向上する。ハイブリッド材料は、無機コロイド粒子と有機バインダ樹脂とから構成される。例えば、シリカなどの無機コロイド粒子と、エポキシ樹脂、ポリウレタンアクリレート樹脂やポリエステルアクリレート樹脂などの有機バインダ樹脂とから構成されるものが挙げられる。
電解液流路15は、第1の気体発生部8と天板14との間の空間および第2の気体発生部7と天板14との間の空間とすることができる。また、電解液流路15は、隔壁13により仕切ることができる。
生成した水素及び酸素の気泡が効率よく第1の気体発生部8または第2の気体発生部7から離れるように、電解液流路の内部で電解液を循環させるような例えばポンプやファン、熱による対流発生装置などの簡易装置を備え付けることも可能である。
給水口18は、水素製造装置23に含まれるシール材16の一部に開口を作ることにより設けることができる。給水口18は、水素及び酸素へと分解された水を補充するために配置され、その配置箇所および形状は、原料となる水が効率よく水素製造装置へ供給されさえすれば、特に限定されるものではないが、流動性および供給の容易性の観点から、水素製造装置下部に設置することが好ましい。
電解液は、電解質を含む水溶液であり、例えば、0.1MのH2SO4を含む電解液、0.1Mリン酸カリウム緩衝液などである。
本発明を以下に示す実施例を用いてより具体的に説明するが、本発明は実施例に限定されるものではない。
図1~図3に示すような次の水素製造装置を作製した。
作製した水素製造装置は、基板1であるガラス基板上に、第1電極4であるSnO2薄膜が設けられている。その第1電極4上に、a-Si層で構成される三接合の光電変換部2が積層され、さらにその表面に酸化インジウムスズ(ITO)で構成される透明電極層の第2電極5が設けられている。この第2電極5上に水素発生触媒4を担持した水素発生部(第1の気体発生部8)が設けられ、一方、第2電極5とはポリイミド膜により構成される絶縁部11で隔離した形で、第1電極4からAgペーストにより作製された第2の導電部10を通じて酸素発生触媒を担持した酸素発生部(第2の気体発生部7)が設けられている。水素発生部と酸素発生部は複数並列に配置されており、水素発生部および酸素発生部が設けられる層上に電解液が流れる構造を取るように、基板1とガラス製の天板14で挟み込むように、電解液を流す空間である電解液流路15を設け、水素と酸素が混合しないよう、水素発生部と酸素発生部の間にガラスフィルタ製の隔壁13を設けた構造を構成した。以下にその作製プロセスについて詳細を示す。
次に、プラズマCVD法により、a―Siの製膜を行った。まず、基板温度150℃で、SiH4およびCO2を主ガス、B2H6をドーピングガス、水素を希釈ガスとして、膜厚20nmのa-SiOのp層を製膜した。その後、SiH4を主ガス、H2を希釈ガスとして膜厚200nmのa-Siのi層、再びSiH4およびCO2を主ガス、PH3をドーピングガス、水素を希釈ガスとして、膜厚10nmのa-SiOのn層を順次製膜し、pin接合を有する光電変換層を形成した。この後、同様の方法でpin接合を有する光電変換層をさらに2層形成し、3層の光電変換層からなる光電変換部2を形成した。続けてスパッタリング法により、膜厚200nmのITOを形成した。製膜された光電変換部2および第2電極5は、フォトリソグラフィー工程、(1)シリコン薄膜上にレジストを塗布、(2)フォトマスクを用いて光露光を行い、レジストにマスクパターンの潜像を形成、(3)現像してレジストをパターン化し、薄膜をエッチング、(4)レジスト剥離、によりコンタクトホールを形成するパターニングを行った。
水素発生触媒と酸素発生触媒の間には、多孔質ガラス製の隔壁9を配置し、基板と天板、および基板・天板と隔壁を耐酸性エポキシ樹脂のシール材13を用い接続することにより、本発明による水素製造装置の作製を行った。
図5に示すような水素製造装置を次の条件で作製した。
実施例1と同様の方法で、基板1上に、光電変換部2、第2電極5、絶縁部11、第2の導電部10、酸素発生部(第2の気体発生部7)、水素発生部(第1の気体発生部8)をそれぞれ形成した。ここで実施例1との差異は、第2の導電部10を設けたコンタクトホールが第2の気体発生部7の長軸方向に沿って設けられている点である。このように、コンタクトホールの個数を減らすことにより、接触不良を減少させることが可能である上、第2の気体発生部7の幅をより狭くする際にも、コンタクトホールの断面積が、第2の導電部10に接続されている第2の気体発生部7の幅よりも狭く本構造によるコンタクト形成が可能であり、効率よく水素および酸素の製造が可能となる。
図7に示すような水素製造装置を次の条件で作製した。
実施例1と同様の方法で、基板1上に、光電変換部2、第2電極5、絶縁部11、第2の導電部10、酸素発生部(第2の気体発生部7)、水素発生部(第1の気体発生部8)をそれぞれ形成した。
続けて、隔壁13は図7に示されるように、第1の気体発生部8および第2の気体発生部7が設置された間の箇所に、ガスが効率的に集められるように熱硬化性ポリイミドをスクリーン印刷法により作製した上で、基板側の材料と天板材料をシール材により装置の周辺を封止した。このようにして水素製造装置の作製を行った。
図6に示すような水素製造装置を次の条件で作製した。
実施例1と同様の方法で、基板1上に、光電変換部2、第2電極5、絶縁部11、第2の導電部10、酸素発生部(第2の気体発生部7)、水素発生部(第1の気体発生部8)をそれぞれ形成した。ここで実施例1との差異は、第1の気体発生部8と第2の気体発生部7の幅が異なる点である。水1分子を電気分解する際、水素が1分子、酸素が0.5分子の割合で生成するため、触媒活性および触媒担持量により触媒層の幅を変化させ、バランスを取ることが可能となった。
実施例1により作製される水素製造装置のうち、酸素発生部を次のように作製した。
ガラスフィルターを隔壁とするガラス製電気化学セルのカソード側にpH7、0.1Mのリン酸カリウム緩衝液および0.5mMの硝酸コバルトを、アノード側にpH7、0.1Mのリン酸カリウム緩衝液を投入した。多孔質カーボンをカソード側電解液中に浸し、Ptメッシュをアノード電解液中に浸し、両極を電気的に接続した後、1.29V(vs NHE)の電位をかけることにより電気化学的にリン酸コバルトを多孔質カーボン上に担持した。このように作製した酸素発生触媒を実施例1の水素製造装置の第2の気体発生部7に形成することにより、表面積をより大きくし酸素発生速度を向上させた装置を作製することが可能となった。
実施例1により作製された水素製造装置を太陽光が受光面に対して垂直方向に入射するように斜めに設置した。給水口18より、0.1MのH2SO4を含む電解液を、液面が第1ガス排出口20および第2ガス排出口19付近まで注入し、太陽光を照射したところ、第1の気体発生部8および第2の気体発生部7からそれぞれ水素および酸素が生成し、第1ガス排出口20より水素が、第1ガス排出口20より酸素が排出されることをガスクロマトグラフィにて確認した。
実施例5により作製された酸素発生触媒を第2の気体発生部7に形成した水素製造装置を太陽光が受光面に対して垂直方向に入射するように斜めに設置した。給水口18より、pH7、0.1Mリン酸カリウム緩衝液を含む電解液を、液面が第1ガス排出口20および第2ガス排出口19付近まで注入し、太陽光を照射したところ、第1の気体発生部8および第2の気体発生部7からそれぞれ水素および酸素が生成し、第1ガス排出口20より水素が、第1ガス排出口20より酸素が排出されることをガスクロマトグラフィにて確認した。これにより中性の電解液を用いても水素製造が可能となることが確認された。
Claims (31)
- 受光面および裏面を有する光電変換部と、前記裏面の上に設けられている第1の気体発生部および第2の気体発生部とを備え、
第1の気体発生部および第2の気体発生部のうち、一方は電解液からH2を発生させる水素発生部であり、他方は電解液からO2を発生させる酸素発生部であり、
第1の気体発生部および第2の気体発生部は、少なくとも一方が複数であり、
前記光電変換部と第1の気体発生部および第2の気体発生部とは、前記光電変換部が受光することにより生じる起電力が第1の気体発生部および第2の気体発生部に供給されるように電気的に接続されていることを特徴とする水素製造装置。 - 第1の気体発生部および第2の気体発生部は、交互に並列に設けられている請求項1に記載の装置。
- 第1の気体発生部と第2の気体発生部との間に隔壁をさらに備える請求項1または2に記載の装置。
- 前記隔壁は、第1の気体発生部と第2の気体発生部とを仕切るように設けられている請求項3に記載の装置。
- 第1の気体発生部および第2の気体発生部は、実質的に長方形であり、かつ、前記隔壁を挟んで長辺が隣接するように設けられている請求項3または4に記載の装置。
- 第1の気体発生部の一方の短辺の外側に設けられている第1ガス排出口と、
第2の気体発生部の一方の短辺の外側に設けられている第2ガス排出口とをさらに備え、
第1ガス排出口および第2ガス排出口は並んで設けられている請求項5に記載の装置。 - 第1ガス排出口および第2ガス排出口は複数であり、
複数の第1ガス排出口は、1つの第1ガス排出路に導通し、
複数の第2ガス排出口は、1つの第2ガス排出路に導通する請求項6に記載の装置。 - 前記隔壁は、イオン交換体を含む請求項3~7のいずれか1つに記載の装置。
- 第1の気体発生部は、前記光電変換部の裏面と電気的に接続し、
第2の気体発生部は、第1の導電部を介して前記光電変換部の受光面と電気的に接続している請求項1~8のいずれか1つに記載の装置。 - 第2の気体発生部は、絶縁部を介して前記光電変換部の裏面上に設けられている請求項9に記載の装置。
- 前記光電変換部の裏面と第1の気体発生部との間に設けられている第2電極をさらに備える請求項10に記載の装置。
- 第2電極および前記絶縁部は、前記電解液に対する耐食性および遮液性を有する請求項11に記載の装置。
- 前記絶縁部は、前記光電変換部の側面を覆うように設けられている請求項10~12のいずれか1つに記載の装置。
- 第1の導電部は、前記光電変換部の受光面に接触する第1電極と、第1電極および第2の気体発生部にそれぞれ接触する第2の導電部とを含む請求項9~13のいずれか1つに記載の装置。
- 第2の導電部は、前記光電変換部を貫通するコンタクトホールに設けられている請求項14に記載の装置。
- 第2の導電部は、前記光電変換部の受光面と平行な断面を有し、
該断面は、第1の気体発生部および第2の気体発生部の列方向と平行な細長い形状を有する請求項15に記載の装置。 - 第2の導電部は、前記光電変換部の側面を覆うように設けられている請求項14に記載の装置。
- 第1の導電部は、前記光電変換部の受光面に接触する第1電極からなり、
第1電極は、第2の気体発生部と接触する請求項9~13のいずれか1つに記載の装置。 - 第2の気体発生部は、前記光電変換部の側面を覆うように設けられている請求項18に記載の装置。
- 前記光電変換部は、透光性を有する基板の上に設けられている請求項1~19のいずれか1つに記載の装置。
- 前記光電変換部は、p型半導体層、i型半導体層およびn型半導体層からなる光電変換層を有する請求項1~20のいずれか1つに記載の装置。
- 前記光電変換部は、直列接続した複数の光電変換層を含み、
前記複数の光電変換層は、受光することにより生じる起電力を第1の気体発生部および第2の気体発生部に供給する請求項1~21のいずれか1つに記載の装置。 - 各光電変換層は、第3の導電部により直列接続されている請求項22に記載の装置。
- 第3の導電部は、前記光電変換層の受光面側に設けられている透光性電極と、前記光電変換層の裏面側に設けられている裏面電極とを含む請求項23に記載の装置。
- 前記光電変換部の裏面と第2の気体発生部との間に設けられている絶縁部と、前記絶縁部と第2の気体発生部との間に設けられている第4の導電部とをさらに備える請求項1~9のいずれか1つに記載の装置。
- 前記光電変換部の裏面と第1の気体発生部との間の一部に設けられている絶縁部と、前記絶縁部と第1の気体発生部との間に設けられている第5の導電部とをさらに備える請求項1~9、25のいずれか1つに記載の装置。
- 前記水素発生部および前記酸素発生部は、それぞれ電解液からH2が発生する反応の触媒および電解液からO2が発生する反応の触媒を含む請求項1~26のいずれか1つに記載の装置。
- 前記水素発生部および前記酸素発生部のうち少なくとも一方は、触媒が担持されている多孔質の導電体である請求項27に記載の装置。
- 前記光電変換部は、透光性を有する基板の上に設けられ、
第1の気体発生部および第2の気体発生部の上に前記基板に対向する天板をさらに備え、
第1の気体発生部および第2の気体発生部と前記天板との間に空間が設けられている請求項1~28のいずれか1つに記載の装置。 - 第1の気体発生部と第2の気体発生部との間に隔壁をさらに備え、
前記隔壁は、第1の気体発生部と前記天板との間の空間および第2の気体発生部と天板との間の空間とを仕切るように設けられている請求項29に記載の装置。 - 請求項1~30のいずれか1つに記載の水素製造装置を前記光電変換部の受光面が水平面に対し傾斜するように設置し、
前記水素製造装置の下部から前記水素製造装置に電解液を導入し、太陽光を前記光電変換部の受光面に入射させることにより前記水素発生部および前記酸素発生部からそれぞれ水素および酸素を発生させ、前記水素製造装置の上部から水素および酸素を排出する水素製造方法。
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- 2010-12-20 CN CN201080063346.6A patent/CN102812159B/zh not_active Expired - Fee Related
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JP2013045696A (ja) * | 2011-08-25 | 2013-03-04 | Sharp Corp | アニオン交換膜型燃料電池システム |
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Also Published As
Publication number | Publication date |
---|---|
EP2535442B1 (en) | 2016-10-05 |
EP2535442A1 (en) | 2012-12-19 |
US9708718B2 (en) | 2017-07-18 |
CN102812159B (zh) | 2015-08-26 |
US20130015076A1 (en) | 2013-01-17 |
CN102812159A (zh) | 2012-12-05 |
JP2011179109A (ja) | 2011-09-15 |
EP2535442A4 (en) | 2014-11-12 |
BR112012019778A2 (pt) | 2016-05-17 |
JP5663254B2 (ja) | 2015-02-04 |
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