WO2011093586A2 - 발광소자와 태양전지 성능을 포함하는 전자소자 - Google Patents
발광소자와 태양전지 성능을 포함하는 전자소자 Download PDFInfo
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- WO2011093586A2 WO2011093586A2 PCT/KR2010/008464 KR2010008464W WO2011093586A2 WO 2011093586 A2 WO2011093586 A2 WO 2011093586A2 KR 2010008464 W KR2010008464 W KR 2010008464W WO 2011093586 A2 WO2011093586 A2 WO 2011093586A2
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 44
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 claims abstract description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 15
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 15
- 229920000642 polymer Polymers 0.000 claims description 10
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 9
- 239000011368 organic material Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 235
- 239000000463 material Substances 0.000 description 11
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 238000004770 highest occupied molecular orbital Methods 0.000 description 9
- 238000010248 power generation Methods 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 229920000109 alkoxy-substituted poly(p-phenylene vinylene) Polymers 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000012780 transparent material Substances 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 230000027756 respiratory electron transport chain Effects 0.000 description 3
- 239000005964 Acibenzolar-S-methyl Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000010405 anode material Substances 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 229910001416 lithium ion Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004520 electroporation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004776 molecular orbital Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K65/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
Definitions
- the present invention is a multi-function that performs a solar cell (SOLAR CELL) function to produce electricity by receiving a light source such as an organic light emitting device (OLED: ORGANIC LIGHT EMITTING DIODE) and a light source such as solar light to emit light by receiving a current It relates to an electronic device.
- a light source such as an organic light emitting device (OLED: ORGANIC LIGHT EMITTING DIODE) and a light source such as solar light to emit light by receiving a current It relates to an electronic device.
- Display devices include self-luminous devices such as a cathode ray tube (CRT), a plasma display panel (PDP), a light emitting diode (LED), an organic light emitting diode (OLED), and a field emission display (FED) according to the display method.
- CTR cathode ray tube
- PDP plasma display panel
- LED light emitting diode
- OLED organic light emitting diode
- FED field emission display
- Separate light sources such as LCD (Liquid Crystal Display) and DLP (Digital Lighting Processing) are classified into passive devices that selectively block / reflect them and display active matrix types such as TFT-LCD and AMOLED, PDP and It is classified into passive matrix type such as PMOLED.
- the self-luminous device uses the principle of photoluminence that is excited by Photon and emits light, such as PDP, and the principle of Electroluminence that is excited and emits by Electron, such as OLED and LED, and like CRT and FED.
- the use of the principle of cathodoluminescence, which is excited by the accelerated electrons, is largely divided.
- OLED research was conducted in early 1980 by CWTang of Estman Kodak of the United States, and in 1987, a laminated structure of a hole transporting layer (HTL) and an electron transporting layer (ETL) was introduced.
- a thin film OLED doped with (EML) Emitting Layer (EML) was fabricated and began to rapidly develop by showing luminance characteristics of 1000 cd / m 2 or more under a driving voltage of 10V or less.
- the small molecule OLED led by Kodak, has reached the commercialization stage with continuous research and development by Pioneer and Idemistu.
- a solar cell is a semiconductor device that directly converts sunlight into electricity by using a photovoltaic effect in which electrons are generated when light is applied to a semiconductor diode forming a p-n junction.
- Solar cells are classified according to the type of material that absorbs sunlight, and bulk solar cells based on crystalline Si wafers; And thin-film solar cells such as amorphous silicon, CdTe, CIGS, fuel-sensitized solar cells (DSSC), and organic solar cells.
- thin-film solar cells such as amorphous silicon, CdTe, CIGS, fuel-sensitized solar cells (DSSC), and organic solar cells.
- OLEDs Organic light emitting diodes
- thin film solar cells have similar structures, and an attempt has been made to simultaneously implement power generation and information display.
- a material constituting each layer should be selected in consideration of energy levels between respective layers, such as a light emitting layer and a photoelectric conversion layer including a pair of electrode layers. If the energy level is not taken into consideration, the electron mobility is lowered. Accordingly, in the case of the organic light emitting diode (OLED), the luminous efficiency is low, and in the case of the solar cell, the power generation efficiency is low.
- a solar cell is bonded to one side of an organic light emitting diode (OLED).
- OLED organic light emitting diode
- At least one of the pair of electrodes uses ITO as a transparent electrode in order to transmit light emitted from the light emitting device to the user, and a pair of electrodes in order to transmit the sunlight to the photoelectric conversion layer in the solar cell. At least one of the electrodes uses ITO as a transparent electrode.
- the electrodes on the side of the organic light emitting diode are shared with each other.
- the electrode layer should be used as a transparent electrode, and there is a problem in that the organic layer underneath is damaged when the transparent electrode is used as ITO.
- An object of the present invention is to provide a structure in which two devices are stacked by sharing one electrode of a light emitting device and one electrode of a solar cell with each other, and thus electron mobility between layers is lowered.
- the luminous efficiency is lowered, or in the case of a solar cell is to solve the problem of low power generation efficiency.
- Another object of the present invention is to solve the problem that the organic material in the lower layer is damaged when forming an electrode layer in a structure in which two electrodes are stacked by sharing one electrode of a light emitting device and one electrode of a solar cell. It is to.
- the shared electrode layer preferably comprises a polymer organic material.
- the shared electrode layer may more preferably include PEDOT: PSS.
- the energy level compensation layer is preferably titanium oxide (TiOx).
- the first electrode layer is a transparent oxide electrode
- the second electrode layer is an opaque metal electrode
- the second electrode layer, the energy level compensation layer formed on the second electrode layer, the light emitting layer formed on the energy level compensation layer, on the light emitting layer A light emitting device unit including a shared electrode layer formed; And a solar cell unit including the shared electrode layer, the photovoltaic layer formed on the shared electrode layer, and a first electrode layer formed on the photoelectric conversion layer, wherein the LUMO energy level of the energy level compensation layer is included. Is smaller than the work function of the second electrode layer and larger than the LUMO energy level of the light emitting layer.
- the shared electrode layer preferably comprises a polymer organic material.
- the shared electrode layer may more preferably include PEDOT: PSS.
- the energy level compensation layer is preferably titanium oxide (TiOx).
- the second electrode layer is a transparent oxide electrode
- the first electrode layer is an opaque metal electrode
- an energy level compensation layer between the photoelectric conversion layer and the first electrode layer.
- the electron mobility between the layers is high, so that the luminous efficiency of the light emitting device or the solar cell It is effective to increase power generation efficiency.
- the organic material in the lower layer is ultimately not damaged.
- the luminous efficiency of the light emitting device or the power generation efficiency of the solar cell is increased.
- FIG. 1 is a cross-sectional view showing an electronic device according to an embodiment of the present invention.
- FIG. 2 is a schematic diagram illustrating a driving principle of the multilayer device of FIG. 1.
- 3 and 4 are graphs measuring the characteristics of the multilayer device according to FIG. 1.
- FIG. 5 is a cross-sectional view illustrating an electronic device according to another embodiment of the present invention.
- FIG. 6 is a schematic diagram illustrating a driving principle of the multilayer device of FIG. 5.
- FIG. 7 and 8 are graphs measuring the characteristics of the multilayer device according to FIG. 5.
- 1 and 2 are for the multi-function electronic device 100 according to an embodiment of the present invention, largely composed of a solar cell unit 110 and a light emitting device unit (120).
- the solar cell unit 110 includes a first electrode layer 111 and a shared electrode layer 130 as a pair of electrode layers on a transparent substrate (not shown) such as glass, and transmits light from the outside between the pair of electrode layers.
- An energy level compensation layer 112 is included between the photoelectric conversion layer 113 for converting energy and the first electrode layer 111 and the photoelectric conversion layer 113.
- the light emitting device unit 120 is sequentially stacked on the solar cell unit 110 such that the light input to the solar cell unit 110 and the light emitting device unit 120 emit light.
- the plurality of layers constituting the solar cell unit 110 is preferably transparent so that light extracted from the light emitting device unit 120 is not blocked by the solar cell unit 110.
- the first electrode layer 111 is selected as a transparent material capable of passing light while having conductivity, and an oxide electrode or a conductive polymer widely used in an electronic device may be used.
- an oxide electrode or a conductive polymer widely used in an electronic device may be used.
- ITO indium tin oxide
- the photoelectric conversion layer 113 may use a photoelectric conversion material used in the thin film solar cell.
- PC 70 BM used as the photoelectric conversion layer 113 has an energy bend of 5.5 eV as a HOOC (Highest Occupied Molecular Orbital) energy level and a 3.6 eV as a Low Unoccupide Molecular Orbital (LUMO) energy level.
- HOOC Highest Occupied Molecular Orbital
- LUMO Low Unoccupide Molecular Orbital
- the common electrode layer 130 it is preferable to use a transparent electrode material so as not to block light emitted from the light emitting device unit 120 to be stacked in a subsequent process, and in the present invention, from the polymer OLED to the hole injection layer, PEDOT: PSS (Poly Elyene Dioxty Thiospnene / Poly Stylene Sulfonate) was used as a common electrode layer. Dimethyl sulfoxide solution was added to PEDOT: PSS solution to improve conductivity.
- the photoelectric conversion layer 113 made of an organic material is damaged in the process of forming ITO on the photoelectric conversion layer 113.
- an organic transparent electrode was used, and more preferably, PEDOT: PSS was used.
- the work function is about 4.8 eV
- the LUMO energy level of the photoelectric conversion layer 113 is about 3.6 eV.
- An energy level compensation layer 112 is introduced between the layers 113.
- the energy level compensation layer 112 has a LUMO energy level that is smaller than the work function of the first electrode layer 111 and is greater than the LUMO energy level of the photoelectric conversion layer 113, and it is preferable to select a transparent material.
- titanium oxide (TiOx) having an LUMO energy level of about 4.4 eV was used.
- the light emitting device unit 120 includes the shared electrode layer 130 and the second electrode layer 121 used as electrodes in the solar cell unit 110 as a pair of electrodes, and the shared electrode layer 130 and the second electrode layer 121. ) And a light emitting layer 123 between the two layers.
- the shared electrode layer 130 is used as the anode of the light emitting device unit 120 in the present invention.
- the second electrode layer 121 was used as the cathode.
- the second electrode layer 121 included a metal electrode, and Al, which is widely used in OLEDs, was used.
- the second electrode layer 121 may be LiF / Al, Ca / Al, Mg / Al, etc. used as a multilayer cathode of an OLED, and in the present invention, LUMO of MEH-PPV used as a material of the emission layer 123. Considering the energy level of 2.8 eV, Ca / Al with a work function of 2.9 eV was used.
- the light emitting layer 123 may be a material used for commonly known low molecular OLEDs and polymer OLEDs, and may be used as a material depending on the light emission wavelength.
- a common electron injection layer (EIL: Electron) is used between the common electrode layer 130 and the light emitting layer 123 or the second electrode layer 121 and the light emitting layer 123 to increase the efficiency of electrons by increasing the mobility of electrons or holes.
- Injection layer ETL
- Electron Transfer Layer ETL
- hole transfer layer HTL: Hole Transfer Layer
- Hole Injection Layer may further include a hole injection layer (Hole Injection Layer).
- the light emitting layer 123 used MEH-PPV known as a light emitting material of the polymer OLED.
- the light emitting layer 123 and the second electrode layer 121 in the light emitting device unit 120 described as an embodiment of the present invention is not limited to the above description, various modifications may be possible.
- the photoelectric conversion layer 113 converts light into electrical energy to transfer electrons and holes to the first electrode layer 111 and the shared electrode layer 130, respectively, and a charger such as a Li-ion battery along the wires connected to the respective electrode layers 111 and 130. Energy is stored (not shown).
- the light emitting device unit 120 supplies electric energy stored in an external power source or the charger through wires connected to the shared electrode layer 130 and the second electrode layer 121, respectively, and generates holes in the shared electrode layer 130. Electrons are transferred from the electrode layer 121 to the light emitting layer 123 to recombine electrons and holes in the light emitting layer to form an exciton, and the exciton transitions to a ground state and emits light. At this time, the emitted light passes through the solar cell unit 110 and is transmitted to the user.
- 3 to 4 are graphs illustrating characteristics of the solar cell unit 110 and the light emitting device unit 120 in the electronic device according to the exemplary embodiment described with reference to FIGS. 1 and 2.
- Figure 3 is a measure of the characteristics of the solar cell unit 110, the efficiency of 2.53% was measured
- Figure 4 is a measure of the characteristics of the light emitting device unit 120, the maximum brightness in the peak wavelength band of about 580nm 1700cd / m 2 , the minimum driving voltage was measured at 3V.
- FIGS. 5 and 6 illustrate a multifunctional electronic device 200 according to another embodiment of the present invention, unlike the embodiment described above with reference to FIGS. 1 and 2, the solar cell unit 210 and the light emitting device unit ( The stacking order of 220 is configured differently.
- the light emitting device unit 220 includes a second electrode layer 221 and a shared electrode layer 230 as a pair of electrode layers on a transparent substrate (not shown) such as glass, and includes a light emitting layer 223 between the pair of electrode layers; And an energy level compensation layer 222 between the second electrode layer 221 and the light emitting layer 223.
- the solar cell unit 210 is sequentially stacked on the light emitting element unit 220 such that the side from which the light emitted from the light emitting element unit 220 is extracted and the side into which the light is injected into the solar cell unit 210 are the same.
- the plurality of layers constituting the light emitting device unit 220 is preferably transparent so that light transmitted from the outside is not blocked from being transmitted to the solar cell unit 210 by the light emitting device unit 220.
- the second electrode layer 221 is selected as a transparent material capable of passing light while having conductivity, and an oxide electrode or a conductive polymer widely used in an electronic device may be used.
- an oxide electrode or a conductive polymer widely used in an electronic device may be used.
- ITO indium tin oxide
- the light emitting layer 223 may be a material used for commonly known low molecular OLEDs and polymer OLEDs, and may be used as a material according to the emission wavelength.
- EIL Electron
- Injection layer ETL
- Electron Transfer Layer ETL
- hole transfer layer HTL
- Hole Injection Layer may further include a hole injection layer (Hole Injection Layer).
- the light emitting layer 223 used MEH-PPV which is known as a light emitting material of a polymer OLED, and the MEH-PPV has a 5.0 eV energy level of HOMO (Highest Occupied Molecular Orbital), and a LUMO (Lowest Unoccupied Molecular Orbital) energy level. Has 2.8eV.
- the shared electrode layer 230 is preferably a transparent electrode material so as not to block the external light transmitted to the solar cell 210 is laminated in a later process, in the present invention, the hole injection layer in the polymer OLED PEDOT: PSS (Poly Elyene Dioxty Thiospnene / Poly Stylene Sulfonate) was used as a common electrode layer. Dimethyl sulfoxide solution was added to PEDOT: PSS solution to improve conductivity.
- the work function of the common electrode layer 230 is 5.0 eV, which is similar to the work function of 4.8 eV of ITO, which is generally used as an anode material of OLED, and is the same as the 5.0 MOV of HOH energy level of MEH-PPV, which is the light emitting layer 223. Since the movement of holes is efficient, the common electrode layer 230 is used as the anode in the present invention.
- the shared electrode layer 230 is used as the cathode, the difference in energy level between the work function 5.0 eV of the shared electrode layer 230 and the 2.8 eV, the LUMO energy level of the MEH-PPV, which is the light emitting layer 223, becomes large.
- the energy level compensation layer made of titanium oxide for compensating the energy level is introduced between the light emitting layer 223 and the light emitting layer 223, the light emitting layer 223 made of an organic material is damaged when the energy level compensation layer is formed. Therefore, it is preferable to use the shared electrode layer 230 as an anode and to use the second electrode layer 221 as a cathode.
- the indium tin oxide (ITO) is used for the second electrode layer 221 used as the cathode in the present invention
- the work function of ITO is 4.8 eV
- the LUMO energy level of the light emitting layer 223 is 2.8 eV.
- the energy level compensation layer 222 is formed between the second electrode layer 221 and the light emitting layer 223 to improve the electron transfer efficiency.
- the energy level compensation layer 222 has a LUMO energy level smaller than the work function of the second electrode layer 221 and greater than the LUMO energy level of the light emitting layer 223, and it is preferable to select a transparent material.
- titanium oxide (TiOx) having an LUMO energy level of about 4.4 eV was used.
- the solar cell unit 210 includes the shared electrode layer 230 and the first electrode layer 211 used as electrodes in the light emitting device unit 220 as a pair of electrodes, and the shared electrode layer 230 and the first electrode layer 211. ) And a photoelectric conversion layer 213 is included.
- the photoelectric conversion layer 213 may use a photoelectric conversion material used in the thin film solar cell.
- PC 70 BM used as the photoelectric conversion layer 213 has an energy bend of 5.5 eV at the HOMO energy level and 3.6 eV at the LUMO energy level.
- Al which is a reflective metal material
- the work function of the shared electrode layer 230 is 5.0eV
- the HOMO energy level of the photoelectric conversion layer 213 is 5.5eV
- LUMO energy level is 3.6 eV
- the work function of Al used as the first electrode layer 211 is 4.3 eV.
- the difference in the energy level between the LUMO energy level of the photoelectric conversion layer 213 and the work function of the first electrode layer 211 is not large, and thus mobility of electrons generated in the photoelectric conversion layer 213 to the first electrode layer 211 is obtained. Is high, and the difference in energy level between the HOMO energy level of the photoelectric conversion layer 213 and the work function of the shared electrode layer 230 is not large, and thus the mobility of the electroporation to the common electrode layer 230 generated in the photoelectric conversion layer 213 is increased. high.
- HBL Hole Blocking Layer
- TiOx used in the light emitting device unit 220 was used.
- the HOMO energy level of TiOx is much larger than the HOMO energy level of the photovoltaic layer 213, it is possible to suppress the movement of the holes generated in the photoelectric conversion layer 213 to the first electrode layer 211, and thus, the solar field.
- the power generation efficiency of the branch 210 can be improved.
- the organic material layer stacked between the shared electrode layer 230 and the energy level compensation layer 222 in the light emitting device unit 220 is not limited to the above description and various modifications. An example would be possible.
- an external light source is a photoelectric conversion layer through a transparent substrate / second electrode layer 221 / energy level compensation layer 222 / light emitting layer 223 / shared electrode layer 230.
- the photoelectric conversion layer 213 converts light into electrical energy to transfer electrons and holes to the first electrode layer 211 and the shared electrode layer 230, respectively, and the respective electrode layers 211 and 230.
- Energy is stored in a charger (not shown) such as a Li-ion battery along a wire connected to the battery.
- the light emitting device unit 220 supplies electric energy stored in an external power source or the charger through wires connected to the shared electrode layer 230 and the second electrode layer 221, respectively, and generates holes in the shared electrode layer 230.
- the second electrode layer 221 electrons are transferred to the light emitting layer 223 to recombine electrons and holes in the light emitting layer to form excitons, and the excitons emit light as they transition to the ground state.
- the emitted light passes through the solar cell unit 110 and is transmitted to the user.
- FIGS. 7 and 8 are graphs measuring the characteristics of the solar cell unit 210 and the light emitting device unit 220 in the electronic device 200 according to an embodiment of the present invention described with reference to FIGS. 5 and 6.
- Figure 7 is a measurement of the characteristics of the solar cell unit 210, the efficiency of 1.31% was measured
- Figure 8 is a measurement of the characteristics of the light emitting device unit 220, the maximum luminance in the peak wavelength band of about 600nm 6cd / m 2 , the minimum driving voltage was 9V.
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Abstract
Description
Claims (11)
- 제 1 전극층, 상기 제 1 전극층 상에 형성되는 에너지 준위 보상층, 상기 에너지 준위 보상층 상에 형성되는 광전변환층, 상기 광전변환층 상에 형성되는 공유전극층을 포함하는 태양전지부; 및상기 공유전극층을 포함하며, 상기 공유전극층 상에 형성되는 발광층, 상기 발광층 상에 형성되는 제 2 전극층을 포함하는 발광소자부;를 포함하며,상기 에너지 준위 보상층의 LUMO 에너지 준위는 상기 제 1 전극층의 일함수보다 작고, 상기 광전변환층의 LUMO 에너지 준위보다 큰 것을 특징으로 하는 전자소자.
- 제 1 항에 있어서, 상기 공유전극층은 고분자 유기물을 포함하는 것을 특징으로 하는 전자소자.
- 제 2 항에 있어서, 상기 공유전극층은 PEDOT:PSS를 포함하는 것을 특징으로 하는 전자소자.
- 제 1 항에 있어서, 상기 에너지 준위 보상층은 타이타늄 산화물(TiOx)인 것을 특징으로 하는 전자소자.
- 제 4 항에 있어서, 상기 제 1 전극층은 투명한 산화물 전극이고, 상기 제 2 전극층은 불투명한 금속 전극인것을 특징으로 하는 전자소자.
- 제 2 전극층, 상기 제 2 전극층 상에 형성되는 에너지 준위 보상층, 상기 에너지 준위 보상층 상에 형성되는 발광층, 상기 발광층 상에 형성되는 공유전극층을 포함하는 발광소자부; 및상기 공유전극층을 포함하며, 상기 공유전극층 상에 형성되는 광전변환층, 상기 광전변환층 상에 형성되는 제 1 전극층을 포함하는 태양전지부;를 포함하며,상기 에너지 준위 보상층의 LUMO 에너지 준위는 상기 제 2 전극층의 일함수보다 작고, 상기 발광층의 LUMO 에너지 준위보다 큰 것을 특징으로 하는 전자소자.
- 제 6 항에 있어서, 상기 공유전극층은 고분자 유기물을 포함하는 것을 특징으로 하는 전자소자.
- 제 7 항에 있어서, 상기 공유전극층은 PEDOT:PSS를 포함하는 것을 특징으로 하는 전자소자.
- 제 6 항에 있어서, 상기 에너지 준위 보상층은 타이타늄 산화물(TiOx)인 것을 특징으로 하는 전자소자.
- 제 9 항에 있어서, 상기 제 2 전극층은 투명한 산화물 전극이고, 상기 제 1 전극층은 불투명한 금속 전극인것을 특징으로 하는 전자소자.
- 제 6 항에 있어서, 상기 광전변환층과 상기 제 1 전극층 사이에 에너지 준위 보상층을 더 포함하는 것을 특징으로 하는 전자소자.
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US13/378,071 US8723191B2 (en) | 2010-01-26 | 2010-11-26 | Electronic device which performs as light emitting diode and solar cell |
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KR1020100006869A KR101036213B1 (ko) | 2010-01-26 | 2010-01-26 | 발광소자와 태양전지 성능을 포함하는 전자소자 |
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TWI782666B (zh) * | 2021-04-01 | 2022-11-01 | 友達光電股份有限公司 | 太陽能板 |
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CN104737319B (zh) * | 2012-10-18 | 2017-12-19 | 富士通株式会社 | 光电转换元件及其制造方法 |
JP2014086490A (ja) * | 2012-10-22 | 2014-05-12 | Toshiba Corp | 発光発電モジュール、発光発電装置 |
TWI531079B (zh) * | 2014-08-12 | 2016-04-21 | 友達光電股份有限公司 | 太陽能電池及其製作方法 |
CN104124312B (zh) * | 2014-08-14 | 2017-04-12 | 天津三安光电有限公司 | 自给式发光二极管组件 |
WO2017081831A1 (ja) * | 2015-11-12 | 2017-05-18 | パナソニックIpマネジメント株式会社 | 光センサ |
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KR102610769B1 (ko) * | 2016-06-09 | 2023-12-07 | 삼성디스플레이 주식회사 | 박막태양전지를 구비한 유기발광 표시장치 및 그 제조방법 |
CN107768475B (zh) * | 2017-10-27 | 2019-01-01 | 南京工业大学 | 一种太阳能电池组件 |
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- 2010-11-26 CN CN201080026611.3A patent/CN102473762B/zh not_active Expired - Fee Related
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WO2011093586A3 (ko) | 2011-10-20 |
US20120091473A1 (en) | 2012-04-19 |
KR101036213B1 (ko) | 2011-05-20 |
US8723191B2 (en) | 2014-05-13 |
CN102473762B (zh) | 2015-01-21 |
CN102473762A (zh) | 2012-05-23 |
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