CN104124312B - 自给式发光二极管组件 - Google Patents

自给式发光二极管组件 Download PDF

Info

Publication number
CN104124312B
CN104124312B CN201410398578.7A CN201410398578A CN104124312B CN 104124312 B CN104124312 B CN 104124312B CN 201410398578 A CN201410398578 A CN 201410398578A CN 104124312 B CN104124312 B CN 104124312B
Authority
CN
China
Prior art keywords
light
emitting diode
electrode
self contained
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410398578.7A
Other languages
English (en)
Other versions
CN104124312A (zh
Inventor
董木森
申利莹
王笃祥
王良均
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianjin Sanan Optoelectronics Co Ltd
Original Assignee
Tianjin Sanan Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tianjin Sanan Optoelectronics Co Ltd filed Critical Tianjin Sanan Optoelectronics Co Ltd
Priority to CN201410398578.7A priority Critical patent/CN104124312B/zh
Publication of CN104124312A publication Critical patent/CN104124312A/zh
Application granted granted Critical
Publication of CN104124312B publication Critical patent/CN104124312B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

本发明涉及一种自给式发光二极管组件，包括一包含太阳能电池和发光二极管的一体化元件和一包含存储功能的控制元件。其中太阳能电池和发光二极管为一体化外延和芯片结构，依次至少包含衬底、第一N型半导体层、光吸收层、P型半导体层、发光层、第二N型半导体层、N电极和P电极，二者无需额外连接层进行连接，直接制备完成，简化制备工艺并降低成本，适合大规模生产，且为自给式纯绿色光电器件，符合国家节能减排战略的需要。

Description

自给式发光二极管组件
技术领域
本发明涉及一种半导体光电组件，具体是一种自给式发光二极管组件。
背景技术
近年来，发光二极管（LED）和太阳能电池作为绿色光源和绿色能源已逐步应用在工农业以及人们的生活中，然而两种器件通常为分开应用或通过外部连接层结合后应用。例如：中国发明专利200810145853.9是采用结合层将LED与太阳能电池连接，中国实用新型专利201020223192.X是采用胶膜将LED与太阳能电池连接，中国发明专利200810301433.5是采用连接电极将LED与太阳能电池连接，额外连接层会造成能量的损耗、工艺难度及成本的增加，而且我们还面临着日益加重的能源和环境危机，因此，有必要提出一种一体化结合太阳能电池与发光二极管的元件，以解决上述存在的问题。
发明内容
针对上述问题，本发明提供一种自给式发光二极管组件，其采用太阳能电池与发光二极管的一体化元件，实现自给式发光，无需其他外部连接层，简化工艺并降低成本。
自给式发光二极管组件，包括：一包含太阳能电池和发光二极管的一体化元件，依次至少包含衬底、第一N型半导体层、光吸收层、P型半导体层、发光层、第二N型半导体层、N电极和P电极；一控制元件，用于控制太阳能电池和发光二极管。
所述光吸收层材料为InxGa1-xN，其中0＜x＜1，优选范围为0.01~0.5，可以为InGaN量子阱层或InGaN量子点层或InGaN层或其任意组合。
所述发光层材料为InyGa1-yN，其中0＜y＜1，优选范围为0.2~0.6，可以为InGaN量子阱层或InGaN量子点层或InGaN层或其任意组合。
优选的，所述光吸收层所吸收光谱与发光层所发射光谱交叠率≤50%，优选≤5%。
所述N电极至少包含第一N电极和第二N电极。
所述第一N电极和P电极通过引线连接构成太阳能电池，第二N电极和P电极通过引线连接构成发光二极管。
所述太阳能电池和发光二极管为一体化外延和芯片结构，二者中间不需额外连接层和连接工艺，芯片制备工艺中太阳能电池面积与发光二极管面积的比例可调节，比例为1：z，其中0＜z≤1，优选范围0.5~1。
所述控制元件同时具有存储功能和控制功能，用于存储电能以及控制太阳能电池和发光二极管，使自给式发光二极管组件可以单独发电、单独发光或同时发电和发光。
本发明所述的自给式发光二极管组件，至少具有以下有益效果：
（1）通过外延和芯片工艺直接制备完成太阳能电池和发光二极管结合的一体化元件，无需分开制备后再结合工艺和额外连接层，从而简化制备工艺并降低成本；
（2）太阳能电池和发光二极管结合的一体化元件的芯片制作工艺可实现太阳能电池面积与发光二极管面积的比例根据需要进行调节，利于更优化的设计；
（3）太阳能电池和发光二极管结合的一体化元件再连接一具有存储功能的控制元件，组成一自给式发光二极管，可直接设置在建筑物橱窗/顶棚及其他户外应用之处，可以单独发电、单独发光或同时发电和发光，实现自给自足，更加高效和绿色。
本发明所述自给式发光二极管组件为绿色器件且制备工艺简单，适用于大规模生产和国家节能减排战略的需要。
附图说明
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明的实施例一起用于解释本发明，并不构成对本发明的限制。此外，附图数据是描述概要，不是按比例绘制。
图1为本发明实施例自给式发光二极管组件的剖面示意图。
图2为本发明实施例自给式发光二极管组件可调节面积的剖面示意图。
图中标示：100：衬底；101：缓冲层；102a：第一N型半导体层；102b：第二N型半导体层；103：光吸收层；104：P型半导体层；105：发光层；106a：第一N电极；106b：第二N电极；107：P电极；108：绝缘保护层；109：引线；110：控制元件。
具体实施方式
下面将结合示意图对本发明的自给式发光二极管组件进行更详细的描述。
实施例
如图1所示，本发明提供一种自给式发光二极管组件，从下至上依次包括：
（1）一衬底100，所述衬底选用蓝宝石（Sapphire）或晶格常数（lattice constant）接近于氮化物半导体的单晶氧化物，在本实施例优选为Sapphire衬底；
（2）一缓冲层101，所述缓冲层生长在衬底100之上；
（3）一第一N型半导体层102a，所述第一N型半导体层生长在缓冲层101之上；
（4）一光吸收层103，所述光吸收层生长在第一N型半导体层102a之上，所述光吸收层材料为InxGa 1-xN，其中0＜x＜1，优选范围为0.01~0.5，可以为InGaN量子阱层或InGaN量子点层或InGaN层或其任意组合；
（5）一P型半导体层104，所述P型半导体层生长在光吸收层103之上；
（6）一发光层105，所述发光层生长在P型半导体层104之上，所述发光层材料为InyGa 1-yN，其中0＜y＜1，优选范围为0.2~0.6，可以为InGaN量子阱层或InGaN量子点层或InGaN层或其任意组合；进一步优选的，所述光吸收层所吸收光谱与发光层所发射光谱交叠率≤50%，优选≤5%；
（7）一第二N型半导体层102b，所述第二N型半导体层生长在发光层105之上生长，至此完成太阳能电池与发光二极管的一体化外延结构；
（8）通过蚀刻工艺暴露出部分第一N型半导体层102a、第二N型半导体层102b和P型半导体层104，分别在其上制作第一N电极106a、第二N电极106b和P电极107；至此完成太阳能电池与发光二极管的一体化芯片结构。其中；太阳能电池面积与发光二极管面积比例可调节，比例为1：z，其中0＜z≤1，优选范围0.5~1，如图2所示；
（9）分别在第一N电极106a、第二N电极106b和P电极107上连接引线，第一N电极106a和P电极107引线构成太阳能电池，第二N电极106b和P电极107引线构成发光二极管；
（10）太阳能电池第一N电极106a和P电极107引线、发光二极管第二N电极106b和P电极107引线均连接至控制元件110，控制元件110具有存储功能和控制功能，用于存储电能以及控制太阳能电池和发光二极管，使自给式发光二极管组件可以单独发电、单独发光或同时发电和发光；至此完成自给式发光二极管组件的制备。
以上所制备的自给式发光二极管组件，为太阳能电池和发光二极管结合的一体化元件，外延和芯片工艺均为一体化，无需分开制备后再结合工艺及额外连接层，简化制备工艺和降低成本。作为自给式发光二极管，可直接设置在建筑物橱窗/顶棚及其他户外应用之处，可以单独发电、单独照明/显示或同时发电和照明/显示，更加清洁和高效，实现自给自足。
本发明所述自给式发光二极管为绿色器件且制备工艺简单，适用于大规模生产和国家节能减排战略的需要。
以上表示了本发明的优选实施例，应该理解的是，本领域技术人员可以修改在此描述的本发明，而仍然实现本发明的有益效果。因此，以上描述应当被理解为对于本领域技术人员的广泛知道，而并不作为对本发明的限制，凡依本发明所做的任何变更，皆属本发明的保护范围之内。

Claims (8)

1.自给式发光二极管组件，包括：
一包含太阳能电池和发光二极管的一体化元件，依次至少包含衬底、第一N型半导体层、光吸收层、P型半导体层、发光层、第二N型半导体层、第一N电极、第二N电极和P电极，所述第一N电极和P电极通过引线连接构成太阳能电池，所述第二N电极和P电极通过引线连接构成发光二极管；
一控制元件，用于控制太阳能电池和发光二极管。
2.根据权利要求1所述的自给式发光二极管组件，其特征在于：所述光吸收层材料为InxGa1-xN，其中0.01≤x≤0.5。
3.根据权利要求2所述的自给式发光二极管组件，其特征在于：所述光吸收层为InGaN量子阱层或InGaN量子点层或其任意组合。
4.根据权利要求1所述的自给式发光二极管组件，其特征在于：所述发光层材料为InyGa1-yN，其中0.2≤y≤0.6。
5.根据权利要求4所述的自给式发光二极管组件，其特征在于：所述发光层为InGaN量子阱层或InGaN量子点层或其任意组合。
6.根据权利要求1所述的自给式发光二极管组件，其特征在于：所述光吸收层所吸收光谱与发光层所发射光谱交叠率≤5%。
7.根据权利要求1所述的自给式发光二极管组件，其特征在于：所述太阳能电池和发光二极管为一体化外延的芯片结构，二者中间无任何额外连接层，芯片制备工艺中太阳能电池面积与发光二极管面积比例为1：z，其中0.5≤z ≤1。
8.根据权利要求1所述的自给式发光二极管组件，其特征在于：所述控制元件同时具有存储功能和控制功能，用于存储电能以及控制太阳能电池和发光二极管，使自给式发光二极管组件单独发电或单独发光或同时发电、发光。
CN201410398578.7A 2014-08-14 2014-08-14 自给式发光二极管组件 Active CN104124312B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410398578.7A CN104124312B (zh) 2014-08-14 2014-08-14 自给式发光二极管组件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410398578.7A CN104124312B (zh) 2014-08-14 2014-08-14 自给式发光二极管组件

Publications (2)

Publication Number Publication Date
CN104124312A CN104124312A (zh) 2014-10-29
CN104124312B true CN104124312B (zh) 2017-04-12

Family

ID=51769655

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410398578.7A Active CN104124312B (zh) 2014-08-14 2014-08-14 自给式发光二极管组件

Country Status (1)

Country Link
CN (1) CN104124312B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108011017B (zh) * 2017-11-27 2020-04-21 清华大学 上转换器件和材料及其制造方法
JP7059983B2 (ja) * 2019-06-13 2022-04-26 信越半導体株式会社 電子デバイス及びその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101577272A (zh) * 2008-05-06 2009-11-11 鸿富锦精密工业（深圳）有限公司 发光模组
CN101645467A (zh) * 2008-08-07 2010-02-10 联胜光电股份有限公司 光电转换元件
CN102326262A (zh) * 2009-10-21 2012-01-18 松下电器产业株式会社 太阳能电池及其制造方法
CN102473762A (zh) * 2010-01-26 2012-05-23 光州科学技术院 包括发光元件及太阳能电池性能的电子元件

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101577272A (zh) * 2008-05-06 2009-11-11 鸿富锦精密工业（深圳）有限公司 发光模组
CN101645467A (zh) * 2008-08-07 2010-02-10 联胜光电股份有限公司 光电转换元件
CN102326262A (zh) * 2009-10-21 2012-01-18 松下电器产业株式会社 太阳能电池及其制造方法
CN102473762A (zh) * 2010-01-26 2012-05-23 光州科学技术院 包括发光元件及太阳能电池性能的电子元件

Also Published As

Publication number Publication date
CN104124312A (zh) 2014-10-29

Similar Documents

Publication Publication Date Title
CN108598227A (zh) 一种半导体白光发光二极管
CN102945902A (zh) 一种光子晶体结构的发光二级管及其应用
CN104124312B (zh) 自给式发光二极管组件
CN204857783U (zh) 一种侧面发光的led
CN202678396U (zh) 一种新型多量子阱发光二极管
TWI492405B (zh) A light emitting type transparent solar cell device
CN203607398U (zh) 一种高显色性白光led结构
CN206364054U (zh) 一种凸型led芯片结构
CN105702669B (zh) 一种植物生长专用宽波段蓝光led
CN103258943A (zh) 完全人工红蓝光型光合转光玻璃平面光源
CN204375750U (zh) 一种基于opv驱动oled发光的器件
CN108050476B (zh) 智能庭院led灯
CN201956347U (zh) 大功率led
CN202192805U (zh) 可降低温室效应的玻璃面板结构
CN201773862U (zh) 一种高亮度发光二极管晶粒
CN107681027B (zh) 白光led及其制作方法
CN110364599A (zh) 一种面向多传输的背发光二极管阵列及其制备方法
CN204498414U (zh) Led线上调光控制电路
CN209959515U (zh) 一种发七彩光的驱蚊扇
CN202216030U (zh) 一种led植物灯
CN209433753U (zh) 一种具有光电显示功能的发电玻璃
CN201758137U (zh) 高亮度发光二极管晶粒
CN107768475B (zh) 一种太阳能电池组件
CN205508868U (zh) 一种多面发光led芯片
CN206329956U (zh) 一种植物生长照明灯

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant