CN101577272A - 发光模组 - Google Patents
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Abstract
本发明涉及一种发光模组,其包括至少一个发光二极管芯片、一个太阳能电池及一个连接电极。每个发光二极管芯片具有一个第一P型/N型半导体层。该太阳能电池具有一个第二P型/N型半导体层。该至少一个连接电极夹设在该太阳能电池的第二P型/N型半导体层与该至少一个发光二极管芯片的第一P型/N型半导体层之间以连接该太阳能电池与该至少一个发光二极管芯片。由于该太阳能电池与该发光二极管芯片通过该连接电极直接连接而形成该发光模组,因此,该发光模组高度集成化,其具有较小的体积,可应用于小型化的电子产品,如作为手机背光模组以提供屏幕显示等。
Description
技术领域
本发明涉及一种发光模组,尤其涉及一种利用太阳能电池(Solar Cell)进行供电的发光模组。
背景技术
随着当今时代对节能环保观念的倡导,越来越多的绿色能源被开发利用,其中,太阳能作为现有最理想的绿色能源被转化为电能并广泛地应用于路灯、地灯、机场照明灯等照明装置,以提供所述照明装置发光时所耗费的电能。太阳能电池的结构具体请参阅2006 IEEE4th World Conference on Photovoltaic Energy Conversion上发表的文章Amorphous-Silicon/Polymer Solar Cells and Key Design Rules for Hybrid SolarCells。
然而,目前市面上采用太阳能供电的照明装置如太阳能路灯等,其结构通常较为庞大,例如,在现有技术中,用于将太阳能转换为电能的太阳能电池与发光元件,如荧光灯、白炽灯、发光二极管之间一般需要设置基板进行连接,导致其架设成本较高,同时也制约了采用太阳能供电的照明装置的大规模推广应用。
有鉴于此,有必要提供一种利用太阳能电池供电且集成化的发光模组。
发明内容
下面将以实施例说明一种集成化的发光模组。
一种发光模组,其包括至少一个发光二极管芯片,每个发光二极管芯片具有一个第一P型/N型半导体层;一个太阳能电池,该太阳能电池具有一个第二P型/N型半导体层;以及至少一个连接电极,其夹设在该太阳能电池的第二P型/N型半导体层与该至少一个发光二极管芯片的第一P型/N型半导体层之间以连接该太阳能电池与该至少一个发光二极管芯片。
相对于现有技术,本发明所提供的发光模组,其通过设置至少一个连接电极将至少一个发光二极管芯片与一个太阳能电池连接在一起,且该太阳能电池可转化太阳光能为电能,从而对该发光二极管芯片供电以使其发光。由于该太阳能电池与该发光二极管芯片通过该连接电极直接连接而形成该发光模组,因此,该发光模组高度集成化,其具有较小的体积,可应用于小型化的电子产品,如作为手机背光模组以提供屏幕显示等。
附图说明
图1是本发明第一实施例所提供的发光模组的剖面示意图。
图2是本发明第二实施例所提供的发光模组的剖面示意图。
具体实施方式
下面将结合附图对本发明实施例作进一步的详细说明。
请参阅图1,本发明第一实施例提供的一种发光模组10,其包括至少一个发光二极管芯片11、一个太阳能电池12,以及连接该发光二极管芯片11与该太阳能电池12的至少一个连接电极13。
该发光二极管芯片11包括一个第一N型半导体层112、一个第一P型半导体层114以及一个量子井(Multi Quantum Well,MQW)层116。该量子井116位于该第一N型半导体层112与该第一P型半导体层114之间,该第一N型半导体层112上形成有一个N型电极118。
该第一N型半导体层112可以掺杂有硅(Si)的氮化镓(GaN)作为材质,该第一P型半导体层114可以掺杂镁(Mg)的氮化镓铝(AlGaN)作为材质。该N型电极118可利用沉积或蚀刻等方法形成在该第一N型半导体层112上。
该发光二极管芯片11还具有一个透明基底(sapphire)110,上述第一N型半导体层112、量子井层116及第一P型半导体层114可依序形成在该透明基底110上,该透明基底110具体可为一个透明蓝宝石基板(transparent sapphire substrate)或掺杂有铟锡氧化物(ITO)的蓝宝石(Al2O3)基板。
该太阳能电池12包括一个光伏半导体层(Photovoltaic Semiconductor Layer)120、一个透明导电层(Transparent Conductive Layer)122及至少一个前电极(Front Electrode)层124。
具体地,该光伏半导体层120包括层叠的一个第二P型半导体层1200及一个第二N型半导体层1202,该第二P型半导体层1200与该第二N型半导体层1202之间形成一个PN结(PNjunction)。优选地,该第二N型半导体层1202和第二P型半导体层1200可分别是采用CVD等方法形成的N型α-Si:H(Hydrogenated amorphous silicon,即氢化非晶硅)及P型α-Si:H,即该太阳能电池12为一个非晶硅太阳能电池。该PN结由该第二N型半导体层1202和第二P型半导体层1200之间的界面接触而形成。
该透明导电层122形成在该光伏半导体层120的第二N型半导体层1202上,其可采用铟锡氧化层(Indium Tin Oxide,ITO)或氧化锌(ZnO)等材料制成。该透明导电层122可对该光伏半导体层120起保护作用及导电作用。
该至少一个前电极124进一步形成在该透明导电层122上,其材料可以是银(Ag),铜(Cu),钼(Mo),铝(Al),铜铝合金(Cu-Al Alloy),银铜合金(Ag-Cu Alloy),或者铜钼合金(Cu-Mo Alloy)等。另外,该前电极124可通过金属导线14电性连接至该N型电极118。
该至少一个连接电极13用于连接该发光二极管芯片11与该太阳能电池12,其夹设在该太阳能电池的光伏半导体层120与该发光二极管芯片11的第一P型半导体层114之间,且其材料同样可以是银(Ag),铜(Cu),钼(Mo),铝(Al),铜铝合金(Cu-Al Alloy),银铜合金(Ag-Cu Alloy),或者铜钼合金(Cu-Mo Alloy)等。
当该太阳能电池12受太阳光照射时,聚集在PN结上的空穴(Holes)及电子(Electrons)将分别为光伏半导体层120的第二P型半导体层1200及第二N型半导体层1202所吸引并移动,进而聚集在该第二P型半导体层1200及该第二N型半导体层1202的两端,使得该第二P型半导体层1200及第二N型半导体层1202之间形成电势差,而由于该第二N型半导体层1202依次通过透明导电层122、前电极124、金属导线14及N型电极118与第一N型半导体层112电性连接,而该第二P型半导体层1200则通过连接电极13与该第一P型半导体层114电性连接,因此,该发光二极管芯片11中的第一P型半导体层114与其第一N型半导体层112之间也将形成电势差,使得该第一P型半导体层114中的空穴流向第一N型半导体层112,同时第一N型半导体层112中的电子流向第一P型半导体层114,当该空穴与该电子相遇时,其二者相互结合并释放出光子从而发光并起到照明的作用。由此,该太阳能电池12吸收太阳光照并将太阳光能转化为电能,从而对发光二极管芯片11供电。可以理解的是,在该能量转化过程中,该连接电极13既相当于发光二极管芯片11的P型电极,又相当于太阳能电池12的背电极(Back Electrode)层,其节省了分别制造发光二极管芯片11的P型电极及太阳能电池12的背电极的制程,从而节约了发光模组10的制造成本。另外,该太阳能电池12与该发光二极管芯片11通过该连接电极13直接连接而形成该发光模组10,使得该发光模组10具有较小的体积,并可应用于小型化的电子产品,如作为手机背光模组以提供屏幕显示等。
可以理解的是,该至少一个发光二极管芯片11的数目可根据照明的需要进行设定,并不局限于图1所示出的两个。另外,该至少一个连接电极13的数目可与该发光二极管芯片11的数目相一致,以相对应地电性连接该至少一个发光二极管芯片11与该太阳能电池12。
本领域技术人员进一步可以理解的是,在本实施例中,发光二极管芯片11的第一N型半导体层112与第一P型半导体层114之间的位置,以及太阳能电池12的第二N型半导体层1202与第二P型半导体层1200之间的位置可以同时互换,使得该连接电极13夹设在第一N型半导体层112与第二N型半导体层1202之间以连接该至少一个发光二极管芯片11与该太阳能电池12,其同样可以利用太阳能电池12将太阳光能转化为电能并对发光二极管芯片11供电。
请参阅图2,本发明第二实施例提供的一种发光模组20,其与本发明第一实施例的发光模组10的不同之处在于:该发光模组20进一步包括一个蓄电装置25,太阳能电池22在白天受太阳光照时所转化的电能储存在该蓄电装置25中,该蓄电装置25在需要时,如在夜晚时对至少一个发光二极管芯片21供电。
该蓄电装置25可为铅蓄电池、锂/离子电池、镍/金属氢化物电池或电容器等,在本实施例中,该蓄电装置25为一个锂/离子电池。
该发光二极管芯片21的第一N型半导体层212与该太阳能电池22的前电极224分别通过金属导线24、26电性连接至该蓄电装置25的负极,而连接电极23则通过金属导线28连接至该蓄电装置25的正极。工作时,该太阳能电池22通过该金属导线24、28对该蓄电装置25充电,而该蓄电装置25通过该金属导线26、28对该发光二极管芯片21供电。
可以理解的是,对于本领域的普通技术人员来说,可以根据本发明的技术构思做出其它各种相应的改变与变形,而所有这些改变与变形都应属于本发明权利要求的封装范围。
Claims (10)
1.一种发光模组,其包括:
至少一个发光二极管芯片,每个发光二极管芯片具有一个第一P型半导体层;
一个太阳能电池,该太阳能电池具有一个第二P型半导体层;以及
至少一个连接电极,其夹设在该太阳能电池的第二P型半导体层与该至少一个发光二极管芯片的第一P型半导体层之间以连接该太阳能电池与该至少一个发光二极管芯片。
2.如权利要求1所述的发光模组,其特征在于,该至少一个发光二极管进一步包括一个第一N型半导体层及形成在该第一N型半导体层上的一个N型电极,该太阳能电池远离第二P型半导体层的一侧设置与该N型电极相对应的至少一个前电极,该N型电极与该前电极电性连接。
3.如权利要求2所述的发光模组,其特征在于,该N型电极通过金属导线与该前电极电性连接。
4.如权利要求2所述的发光模组,其特征在于,该太阳能电池还包括设置在第二P型半导体层的远离连接电极的一侧的一个第二N型半导体层,该第二N型半导体层上形成一个透明导电层,该至少一个前电极进一步形成在该透明导电层上。
5.如权利要求2所述的发光模组,其特征在于,该发光模组进一步包括一个蓄电装置,该蓄电装置分别与该太阳能电池及该至少一个发光二极管芯片电性连接,且该蓄电装置由该太阳能电池对其进行充电,进而对该至少一个发光二极管芯片供电。
6.如权利要求5所述的发光模组,其特征在于,该蓄电装置包括一个正极及一个负极,该发光二极管芯片的第一N型半导体层与该太阳能电池的前电极分别与该蓄电装置的负极电性连接,该连接电极与该蓄电装置的正极电性连接。
7.如权利要求5所述的发光模组,其特征在于,该蓄电装置为铅蓄电池、锂/离子电池、镍/金属氢化物电池或电容器。
8.如权利要求2所述的发光模组,其特征在于,该前电极及该连接电极分别为银、铜、钼、铝、铜铝合金、银铜合金或铜钼合金中的任意一种材料所制成。
9.如权利要求1所述的发光模组,其特征在于,该太阳能电池为一个非晶硅太阳能电池。
10.一种发光模组,其包括:
至少一个发光二极管芯片,每个发光二极管芯片具有一个第一N型半导体层;
一个太阳能电池,该太阳能电池具有一个第二N型半导体层;以及
至少一个连接电极,其夹设在该太阳能电池的第二N型半导体层与该至少一个发光二极管芯片的第一N型半导体层之间以连接该太阳能电池与该至少一个发光二极管芯片。
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CN104103707A (zh) * | 2013-04-11 | 2014-10-15 | 德晶科技股份有限公司 | 发光太阳能电池组件 |
CN104124312B (zh) * | 2014-08-14 | 2017-04-12 | 天津三安光电有限公司 | 自给式发光二极管组件 |
CN108011017A (zh) * | 2017-11-27 | 2018-05-08 | 清华大学 | 上转换器件和材料及其制造方法 |
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CN101777573B (zh) * | 2009-12-25 | 2012-01-11 | 友达光电(厦门)有限公司 | 太阳能发光装置 |
KR101754949B1 (ko) * | 2010-09-06 | 2017-07-07 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
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KR100358107B1 (ko) * | 2000-12-18 | 2002-10-25 | 한국전자통신연구원 | 산화환원형 초고용량 커페시터 및 그 제조방법 |
US7485799B2 (en) * | 2002-05-07 | 2009-02-03 | John Michael Guerra | Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same |
KR20050039014A (ko) * | 2003-10-23 | 2005-04-29 | 주식회사 엘지화학 | 유기 발광 소자용 전극 및 이를 포함하는 유기 발광 소자 |
US20060017055A1 (en) * | 2004-07-23 | 2006-01-26 | Eastman Kodak Company | Method for manufacturing a display device with low temperature diamond coatings |
JP4203457B2 (ja) * | 2004-07-28 | 2009-01-07 | シャープ株式会社 | 発光モジュールおよび発光システム |
JP5023455B2 (ja) * | 2005-03-28 | 2012-09-12 | 大日本印刷株式会社 | 有機薄膜太陽電池の製造方法および有機薄膜太陽電池 |
TWI305431B (en) * | 2005-04-06 | 2009-01-11 | Au Optronics Corp | Organic light emitting diode display |
US20080277652A1 (en) * | 2007-02-22 | 2008-11-13 | Nitto Denko Corporation | Carbon-containing semiconducting devices and methods of making thereof |
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CN104103707A (zh) * | 2013-04-11 | 2014-10-15 | 德晶科技股份有限公司 | 发光太阳能电池组件 |
CN104124312B (zh) * | 2014-08-14 | 2017-04-12 | 天津三安光电有限公司 | 自给式发光二极管组件 |
CN108011017A (zh) * | 2017-11-27 | 2018-05-08 | 清华大学 | 上转换器件和材料及其制造方法 |
CN113838887A (zh) * | 2021-08-31 | 2021-12-24 | 电子科技大学 | 一种自供电式全钙钛矿发光二极管 |
CN113838887B (zh) * | 2021-08-31 | 2024-04-05 | 电子科技大学 | 一种自供电式全钙钛矿发光二极管 |
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