CN101561104A - Led光源装置 - Google Patents
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- CN101561104A CN101561104A CNA2008103011500A CN200810301150A CN101561104A CN 101561104 A CN101561104 A CN 101561104A CN A2008103011500 A CNA2008103011500 A CN A2008103011500A CN 200810301150 A CN200810301150 A CN 200810301150A CN 101561104 A CN101561104 A CN 101561104A
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- 239000000463 material Substances 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 15
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 5
- -1 albronze Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010930 yellow gold Substances 0.000 claims description 3
- 229910001097 yellow gold Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical group [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 229910001887 tin oxide Inorganic materials 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- 230000003760 hair shine Effects 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 13
- 239000002210 silicon-based material Substances 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 238000005286 illumination Methods 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- 229910017767 Cu—Al Inorganic materials 0.000 description 1
- 229910005543 GaSe Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/30—Driver circuits
- H05B45/37—Converter circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/34—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering
- H02J7/35—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering with light sensitive cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S362/00—Illumination
- Y10S362/80—Light emitting diode
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Abstract
一种LED光源装置,其包括:一个LED发光元件,该LED发光元件用于发光。所述LED光源装置还进一步包括:一个太阳能电池单元及一可充电电池单元。所述太阳能电池单元用于产生电能。所述可充电电池单元用于存储所述太阳能电池单元产生的电能,并将该存储的电能提供给所述LED发光元件使其发光。本发明LED光源装置的太阳能电池单元可自身产生电能,并通过可充电电池单元给所述LED发光元件提供电能,这样LED发光元件发光时,无需在外部接收电能。
Description
技术领域
本发明涉及一种光源装置,尤其涉及一种可自身提供电能的LED光源装置。
背景技术
随着节能的倡导,越来越多绿色能源被开发利用。LED作为最理想的发光件越来越多地被应用在路灯、地灯、机场照明灯等照明装置上。目前,发光二极管(Light EmittingDiode,LED)因具光质佳(也即LED光源射出的光谱)及发光效率高等特性得到广泛的应用,具体可参阅Michael S.Shur等人在文献Proceedings of the IEEE,Vol.93,No.10(2005年10月)中发表的“Solid-State Lighting:Toward Superior Illumination”一文。
现有的LED光源装置中,一般采用燃烧大量煤炭和石油来发电,从而提供电能。然而,这样却造成了环境污染和不可再生的矿物能源资源的减少,严重地影响了人类社会的可持续发展。
发明内容
有鉴于此,有必要提供一种可自身提供电能的LED光源装置。
一种LED光源装置,其包括:一个LED发光元件,该LED发光元件用于发光。所述LED光源装置还进一步包括:一个太阳能电池单元及一可充电电池单元。所述太阳能电池单元用于产生电能。所述可充电电池单元用于存储所述太阳能电池单元产生的电能,并将该存储的电能提供给所述LED发光元件使其发光。
相对于现有技术,所述LED光源装置进一步包括一可产生电能的太阳能电池单元及一可存储所述太阳能电池单元产生的电能的可充电电池单元。因此,所述LED发光元件发光时,可直接通过所述可充电电池单元存储的电能使其发光,从而无需再接收外部电能。
附图说明
图1是本发明实施方式LED光源装置的结构示意图;
图2是图1中LED光源装置的太阳能电池单元的结构示意图。
具体实施方式
以下将结合附图对本发明作进一步的详细说明。
请一并参阅图1与图2,为本发明实施方式的LED光源装置10,其包括一个太阳能电池单元100、一个可充电电池单元(Rechargeable Battery)110及一个LED发光元件120。
所述太阳能电池单元100包括一个基板17,所述基板17具有一个承载面172,所述基板17的承载面172上依次形成有:背电极(Back Metal Contact Layer)16,P型半导体层15,P-N结层14,N型半导体层13,透明导电层(Transparent Conductive Oxide)12,及前电极(Front Metal Contact Layer)11。
所述基板17是可挠曲的材料做成,该基板17的厚度大约在10μm至100μm之间。本实施方式中,所述基板17是可挠曲的铝镁合金箔(Al-Mg alloy foil)。所述基板17的材料还可以是铝不锈钢片(stainless steel sheet),或聚合物薄板(polymer sheet)等可挠曲的材料。实际应用中,所述基板17也可由单晶硅、多晶硅或玻璃材料做成,并不限于本实式方式。
所述背电极16的材料可以是银(Ag),铜(Cu),钼(Mo),铝(Al),铜铝合金(Cu-Al Alloy),银铜合金(Ag-Cu Alloy),或者铜钼合金(Cu-Mo Alloy)等。所述背电极16的侧边设有一电连接端161。
所述P型半导体层15的材料可以是P型非晶硅(P type amorphous silicon,简称P-a-Si)材料,特别是P型含氢非晶硅(P type amorphous silicon with hydrogen,简称P-a-Si:H)材料。当然,该P型半导体层的材料也可以是III-V族化合物或II-VI族化合物,特别是掺杂铝(Al)、钾(Ga)、铟(In)的半导体材料,如氮化铝钾(AlGaN)或铝砷化镓(AlGaAs)。
优选地,所述P型半导体层15的材料为P型非晶硅材料。非晶硅材料对光的吸收性比结晶硅材料强约500倍,所以在对光子吸收量要求相同的情况下,非晶硅材料制成的P型半导体层的厚度远小于结晶硅材料制成的P型半导体层的厚度。且非晶硅材料对基板材质的要求更低。所以采用非晶硅材料不仅可以节省大量的材料,也使得制作大面积的太阳能电池单元成为可能(结晶硅太阳能电池单元的面积受限于硅晶圆的尺寸)。
所述P-N结层14的材料可以是结合性较好的III-V族化合物或I-III-VI族化合物,如碲化镉(CdTe)、铜铟硒(CuInSe2)等材料。也可以是铜铟镓硒(CuIn1-XGaSe2,CIGS)。该P-N结层14用于将光子转换成电子-孔穴对并形成势垒电场。
N型半导体层13的材料可以是N型非晶硅(N Type Amorphous Silicon,简称N-a-Si)材料,特别是N型含氢非晶硅(N Type Amorphous Silicon With Hydrogen,简称N-a-Si:H)材料。当然,该N型半导体层13的材料也可以是III-V族化合物或II-VI族化合物,特别是掺杂氮(N)、磷(P)、砷(As)的半导体材料,如氮化钾(GaN)或磷化铟镓(InGaP)。
透明导电层12的材料可以是,例如,铟锡氧化层(Indium Tin Oxide,ITO),氧化锌(ZnO)等。
前电极11的材料可以是银(Ag),铜(Cu),钼(Mo),铝(Al),铜铝合金(Cu-AlAlloy),银铜合金(Ag-Cu Alloy),或者铜钼合金(Cu-Mo Alloy)等。所述太阳能电池单元100通过其前电极11和背电极16上的电连接端161分别连接至可充电电池单元(Rechargeable Battery)110的正负极上可对其充电。
所述可充电电池单元110可以选择锂离子/锂聚合物电池,可适应于薄型化设计。其用于为所述LED发光元件120提供电能。
本实施方式中,所述LED发光元件120为多个LED组成的LED阵列,在实际制造的过程中,可根据实际对照明亮度和照明范围的需要设置LED发光元件120的数量。而且,太阳能电池单元100的面积也可以根据其光电转换效率和实际所需要的电能来确定。
所述LED光源装置10进一步包括一充放电控制器(Charge/Discharge Controller)130。所述充放电控制器(Charge/Discharge Controller)130为一个模块化的芯片,其包括一个第一DC/DC转换器(DC/DC Converter)132、一个第二DC/DC转换器134、一个PWM控制器(PulseWidth Modulation Controller,即脉宽调制控制器)136。
具体的,所述太阳能电池单元100与可充电电池单元110之间通过所述第一DC/DC转换器(DC/DC Converter)132电连接,所述可充电电池单元110与所述LED发光元件120之间通过所述第二DC/DC转换器134电连接。
所述PWM控制器136分别与所述可充电电池单元110、第一DC/DC转换器132、LED发光元件120以及第二DC/DC转换器134电连接,其工作方法为:
在充电模式下,所述PWM控制器136由所述可充电电池单元110获得一个电压反馈信号VF和一个电流反馈信号IF,从而提供给所述第一DC/DC转换器132一个第一PWM输出信号(图2中I表示第一PWM输出信号)以精准控制对所述可充电电池单元110充电。
在放电模式下,所述PWM控制器136由所述LED发光元件120获得一个亮度反馈信号LF,从而提供给所述第二DC/DC转换器134一个第二PWM输出信号(图2中II表示第一PWM输出信号)以精准控制所述LED发光元件120的亮度。可以理解的是,所述第二PWM输出信号设定一定的占空比,进而可以控制所述LED发光元件120点亮和未点亮时间比,从而控制所述LED发光元件120的亮度。
所述LED光源装置进一步包括一可产生电能的太阳能电池单元及一可存储所述太阳能电池单元产生的电能的可充电电池单元。因此,所述LED发光元件发光时,可直接通过所述可充电电池单元存储的电能使其发光,从而无需再接收外部电能。
另外,本领域技术人员还可在本发明精神内做其它变化,当然,这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围之内。
Claims (11)
1.一种LED光源装置,其包括:一个LED发光元件,该LED发光元件用于发光,其特征在于:所述LED光源装置还进一步包括:一个太阳能电池单元及一可充电电池单元,所述太阳能电池单元用于产生电能,所述可充电电池单元用于存储所述太阳能电池单元产生的电能,并将该存储的电能提供给所述LED发光元件使其发光。
2.如权利要求1所述的LED光源装置,其特征在于:所述LED光源装置进一步包括一充放电控制器,所述充放电控制在充电模式下用于精准控制所述可充电电池单元充电,在放电模式下用于控制所述LED发光元件的亮度。
3.如权利要求2所述的LED光源装置,其特征在于:所述充放电控制器包括一个第一DC/DC转换器、一个第二DC/DC转换器、一个脉宽调制控制器,所述太阳能电池单元与可充电电池单元之间通过所述第一DC/DC转换器电连接,所述可充电电池单元与所述LED发光元件之间通过所述第二DC/DC转换器电连接。
4.如权利要求1所述的LED光源装置,其特征在于:所述太阳能电池单元包括一个基板、一层背电极、一层P型半导体层、一层P-N结层、一层N型半导体层、一层透明导电层、及一层前电极,所述基板包括一个承载面,所述背电极形成该基板的承载面上,所述P型半导体层形成在该背电极上,所述P-N结层形成在该P型半导体层上所述N型半导体层形成在该P-N结层上,所述透明导电层形成在该N型半导体层上。
5.如权利要求4所述的LED光源装置,其特征在于:所述基板由可挠曲的材料做成。
6.如权利要求5所述的LED光源装置,其特征在于:所述基板的材料为铝镁合金箔、不锈钢片,或聚合物薄板。
7.如权利要求4所述的LED光源装置,其特征在于:所述背电极的材料是银、铜、钼、铝、铜铝合金、银铜合金或者铜钼合金。
8.如权利要求4所述的LED光源装置,其特征在于:所述P型半导体层的材料是P型非晶硅、氮化铝镓或者砷化铝镓。
9.如权利要求4所述的LED光源装置,其特征在于:所述P-N结层的材料是铜铟镓硒、碲化镉或者铜铟硒。
10.如权利要求4所述的LED光源装置,其特征在于:所述N型半导体层的材料是N型非晶硅、氮化钾或者磷化铟镓。
11.如权利要求4所述的LED光源装置,其特征在于:所述透明导电层的材料是铟锡氧化层或者氧化锌。
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CNA2008103011500A CN101561104A (zh) | 2008-04-16 | 2008-04-16 | Led光源装置 |
US12/327,572 US7972025B2 (en) | 2008-04-16 | 2008-12-03 | Light emitting diode device |
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CNA2008103011500A CN101561104A (zh) | 2008-04-16 | 2008-04-16 | Led光源装置 |
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CN107079567A (zh) * | 2014-11-05 | 2017-08-18 | 德克萨斯仪器股份有限公司 | 使用dc‑dc转换器的照明装置的控制 |
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US8466582B2 (en) * | 2010-12-03 | 2013-06-18 | Enphase Energy, Inc. | Method and apparatus for applying an electric field to a photovoltaic element |
US20130023181A1 (en) * | 2011-07-18 | 2013-01-24 | Kuo-Hui Chang | Water pressure conveyance dynamic ornament |
FR2986603A1 (fr) * | 2012-02-02 | 2013-08-09 | Led4Life | Plot de signalisation lumineuse a 360° a faible consommation energetique |
US10374447B2 (en) * | 2013-03-14 | 2019-08-06 | Infineon Technologies Austria Ag | Power converter circuit including at least one battery |
EP3047704B1 (en) | 2014-01-08 | 2017-02-22 | Philips Lighting Holding B.V. | Converter between solar panel, source and load |
US10563827B2 (en) * | 2018-08-27 | 2020-02-18 | Reza Jadidzadeh | Solar powered illumination system |
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US5656098A (en) * | 1992-03-03 | 1997-08-12 | Canon Kabushiki Kaisha | Photovoltaic conversion device and method for producing same |
US8563845B2 (en) * | 2006-04-06 | 2013-10-22 | Carmanah Technologies Corp. | Adaptive solar powered system |
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CN107079567A (zh) * | 2014-11-05 | 2017-08-18 | 德克萨斯仪器股份有限公司 | 使用dc‑dc转换器的照明装置的控制 |
CN107079567B (zh) * | 2014-11-05 | 2020-06-02 | 德克萨斯仪器股份有限公司 | 使用dc-dc转换器的照明装置的控制方法及其相关电路 |
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