CN102916099A - 发光二极管与其制造方法 - Google Patents
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Abstract
本发明公开了一种发光二极管与其制造方法,发光二极管具有基板、N型半导体层、主动层、P型半导体层、电流扩散层与金属电极。P型半导体层中所掺杂的金属离子与氢气经由热处理程序会产生金属氢化物,此金属氢化物会直接形成在P型半导体层的表面以作为电流阻挡层使用。由于金属氢化物直接形成在P型半导体层的表面,所以其结构平整,可以降低电极与焊线剥离的问题。
Description
技术领域
本发明涉及一种发光二极管,且特别涉及一种利用金属氢化物作为电流阻挡层的发光二极管与其制造方法。
背景技术
发光二极管(Light Emitting Diode,简称LED)主要由P型与N型的半导体材料组成,它能产生在紫外线、可见光以及红外线区域内的自幅射光。一般可见光的发光二极管大部份应用在电子仪器设备的指示器或是照明,而红外线的发光二极管则应用于光纤通讯方面。发光二极管初时多用作为指示灯、显示板等,但随着白光发光二极管的出现,也被用作照明。由于LED具有省电、寿命长、亮度高等诸多优点,近来在环保与节能省碳的趋势下,LED的应用愈来愈广泛,例如交通号志、路灯、手电筒与液晶显示的背光模块等。
发光二极管的结构有相当多的改良与调整是为了提高发光二极管的出光效率(light extraction efficiency),其中之一是在透明电极与磊晶层(如P型半导体层)之间设置电流阻挡层。电流阻挡层通常是由氮化硅(Silicon Nitride)或是氧化硅(Silicon Oxide)形成。由于氮化硅或氧化硅具有一定的厚度,所以其上的金属容易产生剥离(peeling)的问题,进而造成工艺良率的下降。
发明内容
本发明提供一种发光二极管与其制造方法,其利用热处理程序所形成的金属氢化物作为电流阻挡层使用。由于金属氢化物直接形成在P型半导体层的表面,所以厚度小于氧化硅或氮化硅所形成的电流阻挡层,以此增加隔离层的电流阻隔功效与改善上方电极与焊线剥离的问题。
本发明实施例提供一种发光二极管,其具有基板、N型半导体层、主动层、P型半导体层、电流扩散层与金属电极,其特征在于P型半导体层与电流扩散层之间具有由P型半导体层中所掺杂的金属离子与氢键结后所产生的一电流阻挡层以阻挡电流由该电流阻挡层的区域通过。
本发明实施例另提出一种发光二极管的制造方法,其包括下列步骤:提供一基板;形成一发光二极管平台于该基板上,该发光二极管平台至少包括一N型半导体层、一主动层与一P型半导体层;以硅甲烷或乙硅烷为反应气体形成一隔离层于该P型半导体层之上;经由热处理程序(ThermalAnnealing),使该隔离层中的氢气与该P型半导体层中的金属离子产生键结以在该P型半导体层的表面上形成一电流阻挡层;形成一电流扩散层以覆盖该电流阻挡层;以及形成一第一金属电极于该电流扩散层上。
综上所述,本发明直接利用热处理程序形成的金属氢化物来做为一电流阻挡层使用,故可以在氧化硅(SiO2)或氮化硅(SiNX)所形成的隔离层厚度变薄的情况下,保持原先的电流阻隔能力,以此改善上方电极与焊线剥离的问题。
为让本发明的上述和其他目的、特征和优点能更明显易懂,下文特举本发明的较佳实施例,并配合所附图式,作详细说明如下。
附图说明
图1A~图1F为本发明一实施例的发光二极管制造工艺示意图。
图2为本发明一实施例的电流阻挡层的结构图。
图3为本发明一实施例的发光二极管的制作方法流程图。
图4A~图4E为根据本发明另一实施例的发光二极管制造工艺示意图。
图5为本发明一实施例的省略去除隔离层130的步骤的流程图。
其中,附图标记说明如下:
110:基板 120:磊晶层
122:N型半导体层 124:主动层
126:P型半导体层 126a:接触面
130:隔离层 140:电流阻挡层
150、450:电流扩散层 160:第一金属电极
170:第二金属电极 200:电流阻挡层的结构
S301~S313:流程图步骤
具体实施方式
请参照图1A~图1F,其为本发明一实施例的发光二极管的制造工艺示意图。发光二极管包括基板110、磊晶层120电流阻挡层140、电流扩散层150与金属电极160、170,其中磊晶层120包括N型半导体层122、主动层124、P型半导体层126。N型半导体层122、主动层124、P型半导体层126形成在基板110上,如图1A所示。基板110的材质例如蓝宝石(sapphire)、GaP、GaAs、AlGaAs、碳化硅(SiC)。本实施例的基板110以蓝宝石基板为例说明,晶格方向例如为(0001),但本发明不限制所使用的基板材质与晶格方向。
基板110与N型半导体层122之间的缓冲层(未图示)可以是氮化镓铝(AlGaN),但本实施例不限制于此。磊晶层120可以利用有机金属化学气相沉积法(metal organic chemical-vapor deposition,MOCVD)、液相磊晶法(LiquidPhase Epitaxy,LPE)或分子束磊晶法(Molecular Beam epitaxy,MBE)来形成,本实施例不受限制。以有机金属化学气相沉积法形成磊晶层120时,具有沉积材料的气体会被导入反应室以沉积磊晶层120,这些反应气体例如是硅甲烷(Silane,SiH4)或乙硅烷(Disilane,H6Si2)。N型半导体层122例如为硅掺杂的磷化铝镓铟材料或硅掺杂的氮化镓材料;P型半导体层126例如为镁掺杂的磷化铝镓铟材料或镁掺杂的氮化镓材料。主动层124可为多重量子井(Multiquantum Well,MQW)结构,例如为氮化铟镓/氮化镓(In0.3Ga0.7N/GaN)量子井结构。
在磊晶层120形成后,可以经由微影、蚀刻等工艺定义磊晶层120的结构,以形成发光二极管平台(Mesa)101。磊晶层120的N型半导体层122、主动层124、P型半导体层126会有部份被移除以暴露出N型半导体层122的部份结构,如图1B所示。
隔离层130为硅化物,例如氧化硅或氮化硅,其形成方法是利用硅甲烷或乙硅烷为反应气体,以磊晶方式在P型半导体层126的上形成硅化物,如图1C所示。由于硅甲烷或乙硅烷具有氢离子,且反应时以氢气作为载流气体,所以隔离层130会捕陷住一些氢离子或氢气。然后,经由热处理程序(thermal process,或称为退火(annealing)),使P型半导体层126中所掺杂的金属离子(例如镁)与氢键结后所产生镁-氢键结(Mg-H complex)。热处理程序的回火温度例如为摄氏500℃至600℃,反应时间例如为5分钟。
镁-氢键结会造成P型半导层126的电洞浓度降低,提升此区域的阻抗,以形成电流阻挡层140。镁离子与氢离子键结产生的化合物有很多种,例如MgH,MgH2,Mg2H,Mg2H2,Mg2H3,and Mg2H4等,本实施例不限制所形成的镁-氢化合物的类型。所形成的镁-氢键结会降低流经电流阻挡层140的电流,以达到阻挡电流的功效。换言之,本实施例是直接利用在P型半导体层126表面形成的金属氢化物,取代传统的硅化物,做为电流阻挡层使用。值得注意的是,P型半导体层126掺杂的金属离子不限定于镁离子,如铍(Be)离子、钙(Ca)离子或钡(Ba)离子等能提供电洞浓度的掺杂物皆可以与氢键结,做为电流阻挡层使用。
在去除隔离层130后,可以看出电流阻挡层140会直接形成在P型半导体层126的表面上,其表面平整,没有凸起的结构,如图1E所示。其中该去除技术包括了利用蚀刻工艺、化学机械研磨(CMP)工艺或使用缓冲氧化层溶液(BOE)等,本发明不因此限定。电流扩散层150可以直接形成在P型半导体层126上以覆盖电流阻挡层140,如图1F所示。形成电流扩散层150的技术包括:电子束蒸镀法、溅镀法等,但本发明不因此限定。电流扩散层150可利用具有低侧向电阻的材料形成,使电流容易向侧边扩散,其材质例如是氧化铟锡(ITO)、氧化锌铝(AZO)、氧化锡(SnO)、氧化镉锡(CTO)、氧化锑锡(ATO)以及镍/金(Ni/Au)等,但本实施例不限制于上述材质。此外,于电流扩散层150与P型半导体层126之间的接触层(未图示)可以是短周期超晶格的氮化镓(GaN SPS),但本实施例不限制于此。
金属电极160、170分别形成在电流扩散层150与N型半导体层122之上以作为正、负电极使用。电流扩散层150可以让电流平均分布到金属电极160以外的区域,让发光区域分布到金属电极160以外的区域。由图1F可以看出,电流阻挡层140直接形成在P型半导体层126接触电流扩散层150的接触面上,其位置与形状对应于金属电极160。电流阻挡层140可以防止电流直接经由金属电极160下方流进P型半导体层126中,以降低在金属电极160下方产生电子电洞复合的机率。以此,可以提高金属电极160以外区域的出光效率。
由于电流阻挡层140直接形成在P型半导体层126接触电流扩散层150的接触面126a上,其表面平整,厚度远小于氧化硅或氮化硅所形成的电流阻挡层。因此,可以降低金属电极160与焊线脱离的问题。此外,电流阻挡层140的结构有多种实施方式,如图2所示,其为本发明一实施例的电流阻挡层的结构图。电流阻挡层的结构200可以依照设计需求设计所需的图形,以增加出光效率。值得注意的是,本发明的电流阻挡层结构不限于此图2。
此外,从上述图1A~图1F的说明,可以归纳出一种发光二极管的制造方法,如图3所示,其为本发明一实施例的发光二极管的制作方法流程图。首先,提供一基板110(步骤S301),再形成一发光二极管平台101于基板110上,发光二极管平台101至少包括一N型半导体层122、一主动层124与一P型半导体层126(步骤S303)。接着以硅甲烷或乙硅烷为反应气体形成一隔离层130于P型半导体层126之上(步骤S305),之后经由热处理程序(ThermalAnnealing),本实施例是以反应时间约5分钟的500~600℃高温进行回火,可以使隔离层130中的氢气与P型半导体层126中的金属离子产生键结以在P型半导体层126的表面上形成一电流阻挡层140(步骤S307)。然后,将P型半导体层126上方的隔离层130去除(步骤S309),接着形成一电流扩散层150覆盖住电流阻挡层140(步骤S311),最后形成第一金属电极160于电流扩散层150上,以及形成第二金属电极170连接N型半导体层122(步骤S313)。上述发光二极管的制造方法的其余细节,本技术领域具有通常知识者应可由上述实施例的说明中推知,在此不加赘述。
在本发明另一实施例中,上述隔离层130可以保留在电流阻挡层140上方以加强电流阻隔的效果,换句话说,电流扩散层150与P型半导体层126之间会具有两层的电流隔离层,其一为电流阻挡层140,其二为隔离层130。请参照图4A~图4E,其为本发明另一实施例的发光二极管的制造工艺示意图,并请同时参照图1A~图1F。其中,图4A~图4D的实施方式如同上述图1A~图1D的说明,在此不加赘述。
图4A~图4E与图1A~图1F不同处在于省略去除隔离层130的步骤(如图1E所示),直接形成电流扩散层450以覆盖隔离层130,如图4E所示。隔离层430的厚度较佳是小于10000埃(angstrom,符号),但本发明的隔离层430的厚度不限制于此。
请同时参照图5,其为本发明一实施例的省略去除隔离层130的步骤的流程图。图5与图3主要差异在于省略“去除隔离层”的步骤S309。也就是说,隔离层130被保留下来,以作为电流隔离层使用,并且在隔离层130与P型半导体层126的接触面上形成由镁氢键结构成的电流阻挡层140。
特别要说明的是,隔离层130与P型半导体层126之间由镁氢键结形成的电流阻挡层140可以增加隔离层130电流阻隔的功效,即绝缘性。所以相较于现有技术,本实施例可以使用较薄的隔离层130来达到相同的电流阻隔效果,并且改善上方电极与焊线剥离的问题。此外,电流阻挡层140也可解决隔离层130漏电的问题。
综上所述,本发明利用隔离层中的氢气与P型半导体层中的金属离子经过热处理程序后所形成的金属氢化物可以增加隔离层的电流阻挡功效,也可以取代隔离层做为电流阻挡层使用。此外,降低隔离层的厚度或者去除隔离层都可以改善上方电极与焊线剥离的问题。
虽然本发明的较佳实施例已揭露如上,然本发明并不受限于上述实施例,任何所属技术领域中具有通常知识者,在不脱离本发明所揭露的范围内,当可作些许的更动与调整,因此本发明的保护范围应当以后附的申请专利范围所界定者为准。
Claims (19)
1.一种发光二极管,具有一基板、一N型半导体层、一主动层、一P型半导体层、一电流扩散层与一第一金属电极,其特征在于,该P型半导体层与该电流扩散层之间具有由该P型半导体层中所掺杂的金属离子与氢键结后所产生的一电流阻挡层以阻挡电流由该电流阻挡层的区域通过。
2.如权利要求1所述的发光二极管,其特征在于,该电流阻挡层的位置对应于该第一金属电极的位置以阻挡电流自该电流阻挡层通过而发光。
3.如权利要求1所述的发光二极管,其特征在于,透明电极是部份直接形成在该电流阻挡层上。
4.如权利要求1所述的发光二极管,其特征在于,主动层为量子井主动层。
5.如权利要求1所述的发光二极管,其特征在于,该N型半导体形成在该基板上;该主动层形成在该N型半导体层与该P型半导体层之间;该电流阻挡层形成在该P型半导体层上且位于该电流扩散层与该P型半导体层之间;该第一金属电极形成在该P型半导体层上。
6.如权利要求1所述的发光二极管,其特征在于,该发光二极管还包括一第二金属电极,连接于该N型半导体层。
7.如权利要求1所述的发光二极管,其特征在于,该基板为蓝宝石基板。
8.如权利要求1所述的发光二极管,其特征在于,掺杂在该P型半导体层中的金属离子包括镁离子,该电流阻挡层由镁-氢键结形成。
9.如权利要求1所述的发光二极管,其特征在于,该P型半导体层与该电流扩散层之间还具有由硅化物形成的一隔离层,该隔离层形成在该电流阻挡层之上。
10.如权利要求9所述的发光二极管,其特征在于,该隔离层的厚度小于10000埃。
11.一种发光二极管的制造方法,其特征在于,包括:
提供一基板;
形成一发光二极管平台于该基板上,该发光二极管平台至少包括一N型半导体层、一主动层与一P型半导体层;
以硅甲烷或乙硅烷为反应气体形成一隔离层于在该P型半导体层之上;
经由热处理程序,使该隔离层中的氢气与该P型半导体层中的金属离子产生键结以在该P型半导体层的表面上形成一电流阻挡层;
形成一电流扩散层以覆盖该电流阻挡层之上方;以及
形成一第一金属电极于该电流扩散层上。
12.如权利要求11所述的发光二极管的制造方法,其特征在于,在执行热处理程序的步骤中,其回火温度为摄氏500℃至600℃,反应时间为5分钟。
13.如权利要求11所述的发光二极管的制造方法,其特征在于,还包括:
形成一第二金属电极以连接该N型半导体层。
14.如权利要求11所述的发光二极管的制造方法,其特征在于,该发光二极管平台是通过磊晶工艺形成,且其磊晶工艺中使用氢气作为载流气体。
15.如权利要求11所述的发光二极管的制造方法,其特征在于,掺杂在该P型半导体层中的金属离子包括镁离子,该电流阻挡层由镁-氢键结形成。
16.如权利要求11所述的发光二极管的制造方法,其特征在于,该基板为蓝宝石基板;该主动层为量子井主动层。
17.如权利要求11所述的发光二极管的制造方法,其特征在于,该隔离层为氮化硅。
18.如权利要求11所述的发光二极管的制造方法,其特征在于,在形成该电流扩散层之前还包括去除该隔离层。
19.如权利要求11所述的发光二极管的制造方法,其特征在于,该隔离层的厚度小于10000埃。
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TWI540753B (zh) * | 2013-07-30 | 2016-07-01 | 隆達電子股份有限公司 | 發光二極體結構 |
CN103441193B (zh) * | 2013-08-29 | 2016-04-06 | 刘晶 | 一种led管芯片电极的制作方法、led管芯片及led管 |
TWI581452B (zh) * | 2014-10-24 | 2017-05-01 | Nat Chunghsing Univ | High light extraction rate of light-emitting diodes, conductive films, and conductive films The production method |
KR20180060704A (ko) * | 2016-11-29 | 2018-06-07 | 광주과학기술원 | 수직 적층형 마이크로 디스플레이 |
DE102018127201A1 (de) * | 2018-10-31 | 2020-04-30 | Osram Opto Semiconductors Gmbh | Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips |
TWI685129B (zh) | 2018-12-17 | 2020-02-11 | 財團法人工業技術研究院 | 紫外光c發光二極體 |
TWI803556B (zh) * | 2018-12-28 | 2023-06-01 | 晶元光電股份有限公司 | 半導體疊層、半導體元件及其製造方法 |
CN111525014B (zh) | 2020-04-27 | 2021-10-12 | 开发晶照明(厦门)有限公司 | 固态发光器件 |
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