WO2023283869A1 - 半导体发光元件和发光装置 - Google Patents

半导体发光元件和发光装置 Download PDF

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Publication number
WO2023283869A1
WO2023283869A1 PCT/CN2021/106427 CN2021106427W WO2023283869A1 WO 2023283869 A1 WO2023283869 A1 WO 2023283869A1 CN 2021106427 W CN2021106427 W CN 2021106427W WO 2023283869 A1 WO2023283869 A1 WO 2023283869A1
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layer
semiconductor
peak
semiconductor layer
emitting element
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PCT/CN2021/106427
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English (en)
French (fr)
Inventor
王瑜
蓝永凌
马明彬
唐超
周宏敏
董金矿
李政鸿
林兓兓
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安徽三安光电有限公司
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Application filed by 安徽三安光电有限公司 filed Critical 安徽三安光电有限公司
Priority to KR1020247001396A priority Critical patent/KR20240019839A/ko
Priority to CN202180003206.8A priority patent/CN116918080A/zh
Priority to PCT/CN2021/106427 priority patent/WO2023283869A1/zh
Publication of WO2023283869A1 publication Critical patent/WO2023283869A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Definitions

  • the invention belongs to the field of semiconductors, in particular to a semiconductor light-emitting element and a light-emitting device including the light-emitting element.
  • LED Light Emitting Diode
  • An object of the present invention is to provide a semiconductor light-emitting element with high luminous efficiency and a light-emitting device including the light-emitting element.
  • the semiconductor light-emitting element includes a semiconductor stack
  • the semiconductor stack includes: a first semiconductor layer with n-type doping; a second semiconductor layer located on the first semiconductor layer with p type doping, the second semiconductor layer includes a third surface close to the first semiconductor layer and a fourth surface away from the first semiconductor layer; an active layer located between the first semiconductor layer and the second semiconductor layer, The active layer includes a first surface close to the first semiconductor layer and a second surface close to the second semiconductor layer; it is characterized in that: the semiconductor stack further includes hydrogen impurities, and the concentration of the hydrogen impurities includes at least the concentration close to the active layer and a second peak far away from the active layer, the second peak being larger than the first peak.
  • the distance between the first peak and the second surface is between 3nm and 55nm
  • the distance between the first peak and the second peak is between 50nm and 150nm
  • the distance between the second peak and the second The distance between surfaces is less than 150 nm.
  • the first peak is between 5E19 cm -3 and 1E20cm -3
  • the second peak is greater than 1E20cm -3 .
  • the hydrogen impurity concentration has a first low value between the first peak and the first surface, a second low value between the first peak and the second peak, and the first low value is smaller than the first low value.
  • Two low values The distance between the second low value and the first peak is greater than the distance between the second low value and the second peak, and the distance between the second low value and the first peak is greater than the distance between the first peak and the second surface distance.
  • the second low value is less than 1E19 cm ⁇ 3
  • the first low value is less than 5E18 cm ⁇ 3 .
  • the present invention also provides a light-emitting device, which includes the above-mentioned semiconductor light-emitting element.
  • the semiconductor light-emitting element designed in the invention can improve the luminous efficiency of the light-emitting element and reduce the voltage.
  • FIG. 1 is a schematic diagram of a cross-sectional structure of a semiconductor light emitting device according to an embodiment of the present invention.
  • FIG. 2 is an enlarged diagram showing the relationship between concentration or ion intensity of elements in a partial range of the semiconductor element in FIG. 1 and depth.
  • Fig. 3 is a schematic cross-sectional structure diagram of a semiconductor light emitting element in another embodiment of the present invention.
  • composition of each layer contained in the semiconductor device of the present invention and the dopant can be analyzed by any suitable means, such as secondary ion mass spectrometer (secondary ion mass spectrometer) mass spectrometer, SIMS).
  • secondary ion mass spectrometer secondary ion mass spectrometer
  • SIMS secondary ion mass spectrometer
  • each layer included in the semiconductor element of the present invention can be analyzed by any suitable means, such as transmission electron microscope (transmission electron microscopy, TEM) or transmission electron microscope (scanning electron microscope, SEM), used to match, for example, the depth position of each layer on the SIMS map.
  • transmission electron microscope transmission electron microscopy, TEM
  • SEM scanning electron microscope
  • peak value refers to the maximum value of the intersection point of two segments with slopes of opposite signs to each other; The minimum value of intersection points of line segments.
  • FIG. 1 is a schematic cross-sectional structure diagram of a semiconductor light emitting element according to an embodiment of the present invention.
  • FIG. 2 shows an enlarged diagram of the relationship between the concentration or ion intensity of elements and the depth of a partial range of the semiconductor element in FIG. 1 .
  • the semiconductor light emitting element comprises a semiconductor stack 20, which comprises a first semiconductor layer 21, an active layer 22 and a second semiconductor layer 23, wherein the active layer 22 is located between the first semiconductor layer 21 and the second semiconductor layer 23 .
  • the first semiconductor layer 21 has n-type doping for providing electrons; the second semiconductor layer 23 has p-type doping for providing holes; electrons and holes emit light through recombination radiation in the active layer 22 .
  • the second semiconductor layer 23 has two opposite surfaces, including a third surface S3 close to the first semiconductor layer 21 and a fourth surface S4 far away from the first semiconductor layer 21 .
  • the active layer 22 has two opposite surfaces, including a first surface S1 close to the first semiconductor layer 21 and a second surface S2 close to the second semiconductor layer 23 .
  • the second surface S2 and the third surface S3 overlapped; however when other semiconductor layers were inserted between the second semiconductor layer 23 and the active layer 22, the second surface S2 S2 and the third surface S3 are different.
  • the second surface S2 is in direct contact with the third surface S3, and both overlap.
  • the semiconductor stack 20 further includes hydrogen impurities H, which are located between the first surface S1 and the fourth surface S4, and further, the signal of the hydrogen impurities H is from the signal near the second surface S2 Several pairs of quantum wells/quantum barriers began to appear. At this time, one or more material layers on the active layer 22 all contain hydrogen impurity H, for example, the signal of hydrogen impurity H can be detected in the second semiconductor layer 23 .
  • the light-emitting element has hydrogen impurity H and group III element I, and the concentration of hydrogen impurity H presents a waveform in the SIMS detection spectrum.
  • the group III element I is indium. Except for group III elements, other elements in the semiconductor light emitting device are not shown in FIG. 2 , such as nitrogen, gallium, aluminum and silicon.
  • the waveform of the hydrogen impurity H includes at least a first peak V1 close to the active layer 22 and a second peak V2 far away from the active layer 22, specifically, the first peak V1 is close to the second surface S2 of the active layer 22, and the second peak V V2 is away from the second surface S2 of the active layer 22 .
  • the second peak value V2 is greater than the first peak value V1, specifically, the hydrogen concentration corresponding to the second peak value V2 is greater than the hydrogen concentration corresponding to the first peak value V1.
  • the hydrogen impurity H reaches the first peak value V1 at a position close to the second surface S2, and a higher concentration of the hydrogen impurity H can cause the second semiconductor layer 23 to generate a larger number of holes at this position, and promote the flow of holes to the active layer 22. moves, so that the concentration of holes recombined with electrons in the active layer 22 increases, and the luminous efficiency is improved.
  • the hydrogen impurity H reaches the second peak V2 at a position away from the second surface S2, and the second peak V2 is greater than the first peak V1.
  • the hydrogen impurity H reaches the second peak at a position close to the fourth surface S4 V2, a higher concentration of hydrogen impurity H can make the second semiconductor layer 23 reach a lower resistance value at this position, reduce the contact resistance between the second semiconductor layer 23 and subsequent material layers, and reduce the starting voltage of the light-emitting element, thereby
  • the design purpose of providing a high-brightness, low-voltage light-emitting element can be achieved.
  • the distance d1 between the first peak V1 and the second surface S2 is between 3 nm ⁇ 55 nm. If the distance d1 between the first peak V1 and the second surface S2 is relatively large, such as greater than 55 nm, it cannot promote the efficient entry of holes in the second semiconductor layer 23 into the active layer 22, that is, it cannot effectively improve the density of holes and electrons. Recombination efficiency, ultimately unable to improve luminous efficiency.
  • the distance d2 between the first peak V1 and the second peak V2 is between 50 nm ⁇ 150 nm, and the distance d between the second peak V2 and the second surface S2 is less than 150 nm.
  • the second semiconductor layer 23 is thicker overall, which may cause light absorption of the material layer and reduce light extraction efficiency to a certain extent.
  • the first peak V1 is between 5E19cm -3 and 1E20cm -3
  • the second peak V2 is greater than 1E20cm -3
  • the first peak value V1 and the second peak value V2 refer to the hydrogen concentration corresponding to the peak top of the hydrogen impurity waveform.
  • the hydrogen impurity concentration has a first low value L1 between the first peak V1 and the first surface S1, and a second low value L2 between the first peak V1 and the second peak V2.
  • the first low value L1 and the second low value L2 refer to the hydrogen concentration corresponding to the trough of the hydrogen impurity waveform, and the first low value L1 is smaller than the second low value L2.
  • the distance d3 between the second low value L2 and the first peak value V1 is greater than the distance d4 between the second low value L2 and the second peak value V2, and the distance between the second low value L2 and the first peak value d3 is greater than the first peak value
  • the second low value L2 is less than 1E19 cm -3
  • the first low value L1 is less than 5E18 cm -3 .
  • the above-mentioned light-emitting element has high light efficiency and low voltage performance.
  • Fig. 3 shows a schematic cross-sectional structure diagram of a semiconductor light emitting element according to another embodiment of the present invention.
  • the semiconductor light emitting element includes a light emitting diode.
  • the LED includes a substrate 10 , a semiconductor stack 20 on the substrate 10 , and a first electrode 51 and a second electrode 52 electrically connected to the semiconductor stack 20 .
  • the substrate 10 has a sufficient thickness for supporting the semiconductor stack 20 and other structures thereon.
  • the substrate 10 can be made of conductive or insulating materials, such as gallium arsenide (GaAs), indium phosphide (InP ), silicon carbide (SiC), gallium phosphide (GaP), zinc oxide (ZnO), gallium nitride (GaN), aluminum nitride (AlN), germanium (Ge) or silicon (Si), etc.; insulating materials such as sapphire (Sapphire), silicon carbide (SiC), silicon nitride (SiN), glass and other transparent materials. In this embodiment, a transparent sapphire substrate is preferred.
  • the semiconductor stack 20 can be formed on the substrate 10 by MOCVD growth.
  • the substrate 10 is a bonding substrate rather than a growth substrate, and the semiconductor stack 20 is transferred to the substrate 10 by a transfer process. superior.
  • it can also be patterned to form a series of concave-convex structures on its surface.
  • the semiconductor stack 20 is the above-mentioned semiconductor stack.
  • the semiconductor laminate of this embodiment includes a buffer layer 24, a first semiconductor layer 21, a stress release layer 25, an active layer 22, and a second semiconductor layer 23, and the first electrode 51 and the second electrode 52 are respectively connected to the first semiconductor layer 21. It is electrically connected with the second semiconductor layer 23 .
  • the first semiconductor layer 21 and the second semiconductor layer 23 have opposite conductive forms.
  • the first semiconductor layer 21 has n-type doping to provide electrons
  • the second semiconductor layer has p-type doping to provide holes.
  • the electrons and holes are active
  • the luminescence is recombined in layer 22 .
  • the n-type impurity is such as silicon
  • the p-type impurity is such as magnesium, but the present invention does not limit the type of impurity.
  • the buffer layer 24 is used to reduce the lattice mismatch between the substrate 10 and the first semiconductor layer 21, so the lattice constant of the buffer layer 24 is between the substrate 10 and the first semiconductor layer 21, and may be composed of AlpInqGa1-p-qN material, wherein 0 ⁇ p ⁇ 1, 0 ⁇ q ⁇ 1, specifically AlN layer, GaN layer, AlGaN layer, AlInGaN layer, InN layer and InGaN layer.
  • the buffer layer 24 may be formed by MOCVD or PVD.
  • the stress release layer 25 is grown to release the stress generated during the growth process of the first semiconductor layer 21 , and can also adjust the size of the V-shaped pit to improve the luminance.
  • the stress release layer 25 may be a superlattice structure, such as a superlattice structure formed by alternate lamination of InGaN and GaN, or a single layer structure.
  • the active layer 22 is disposed between the first semiconductor layer 21 and the second semiconductor layer 23 and may include a homojunction, a heterojunction, a single quantum well, multiple quantum wells or other similar structures.
  • the active layer 22 includes alternately stacked quantum well layers 221 and quantum barrier layers 222.
  • the function of the quantum well layers 221 is to enable electrons and holes to recombine and emit light.
  • the energy level of the quantum barrier layers 222 is greater than that of the well layers 221. energy level, the role of the quantum barrier layer 222 is to confine electrons and holes in the quantum well layer 221 to recombine and emit light.
  • the active layer 22 on the side closest to the first semiconductor layer 21 can be a quantum well layer 221 or a quantum barrier layer 222, and the active layer 22 on the side closest to the second semiconductor layer 23 can be a quantum barrier layer 222 or a quantum well layer 221.
  • the quantum barrier layer 222 can be an aluminum-containing or aluminum-free nitride layer with a higher energy level, such as AlGaN or GaN, and the quantum barrier layer 222 can be an n-type doped layer or a non-doped layer that does not substantially contain any impurities. Miscellaneous.
  • the quantum well layer 221 is generally an indium-containing nitride layer with a lower energy level, such as InGaN.
  • the thicknesses of all quantum barrier layers 222 are approximately the same, and the thicknesses of all quantum well layers 221 are approximately the same. In other embodiments, the thicknesses of quantum barrier layers 222 can vary, and the thickness of quantum well layers 221 can also be determined according The thickness of the quantum barrier layer 222 is adjusted accordingly to match.
  • the last quantum barrier layer 222 can be an undoped layer, and can be a single-layer structure or a multi-layer structure, such as AlN, AlGaN or AlInGaN that can be an undoped single-layer structure, or u- GaN/u-AlGaN, u-InGaN/u-AlInGaN/u-AlGaN or u-GaN/AlN.
  • the growth methods of the first semiconductor layer 21, the active layer 22 and the second semiconductor layer 23 include but are not limited to metal organic chemical vapor deposition (meta l-orga nicchemical va por deposition, MOCVD) , hydride vapor phase epitaxy (hyd rid e va por phase epitaxial, HVPE), liquid-phase crystal epitaxial growth (liquid-phase epitaxy, LPE), molecular beam epitaxy (molecular beam epitaxy, MBE), or ion plating, such as sputtering or evaporation.
  • metal organic chemical vapor deposition metal organic chemical vapor deposition
  • HVPE hydride vapor phase epitaxy
  • liquid-phase crystal epitaxial growth liquid-phase epitaxy
  • LPE liquid-phase epitaxy
  • MBE molecular beam epitaxy
  • ion plating such as sputtering or evaporation.
  • the second semiconductor layer 23 extends toward the first semiconductor layer 21 to form a recess A
  • the first electrode 51 is located on the surface of the recess A
  • the second electrode 52 is located on the surface of the second semiconductor layer 23 .
  • the first electrode 51 and the second electrode 52 are located on the same side of the substrate 10 .
  • the first electrode 51 and the second electrode 52 may also be located on opposite sides of the substrate 10 .
  • a transparent conductive layer 30 can also be included between the second electrode 52 and the second semiconductor layer 23, and the transparent conductive layer 30 can promote the lateral diffusion of the current injected by the second electrode 52 and transfer to the semiconductor layer, so that the first semiconductor layer 21 and the second semiconductor layer
  • the second semiconductor layer 53 generates electrons and holes.
  • the transparent conductive layer 30 covers the upper surface of the second semiconductor layer 23 .
  • the transparent conductive layer 23 may also cover the upper surface of the first semiconductor layer 21 at the bottom of the recess A at the same time, so as to further promote the spread of current.
  • the material of the transparent conductive layer 30 is a transparent conductive material, for example, selected from indium tin oxide (ITO), tin oxide (TO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), oxide One or a combination of at least two of indium tin zinc oxide (ITZO), antimony tin oxide (ATO), antimony zinc oxide (AZO), graphene (Graphene), and other suitable transparent conductive oxide materials.
  • ITO indium tin oxide
  • TO tin oxide
  • ZnO zinc oxide
  • IZO indium zinc oxide
  • IGZO indium gallium zinc oxide
  • oxide One or a combination of at least two of indium tin zinc oxide (ITZO), antimony tin oxide (ATO), antimony zinc oxide (AZO), graphene (Graphene), and other suitable transparent conductive oxide materials.
  • the covering area of the upper surface of the second semiconductor layer 23 by the transparent conductive layer 30 is at least 80%, more preferably at least 90%.
  • the transparent conductive layer 30 can be formed by a coating process, such as sputtering, or can be formed in different patterns by an etching process as required. Moreover, after coating, a high-temperature annealing treatment is performed to achieve good ohmic contact between the transparent conductive layer 30 and the second semiconductor layer 23 .
  • a local current blocking layer 40 is also provided between the first electrode 51 and/or the second electrode 52 and the second semiconductor layer 23 respectively, and the current blocking layer 40 is formed of a transparent insulating material, such as silicon oxide, silicon carbide, silicon nitride, One or a combination of several aluminum oxides can have a Bragg structure.
  • the current blocking layer 40 partially blocks current from the second electrode 52 and/or forms vertical current transmission between the first electrode 51 and the second semiconductor layer 23 .
  • the shape of the current blocking layer 40 can be circular, circular or square, and can be one or more pieces, which can be selected and designed according to the requirements of current blocking.
  • the main functions of the first electrode 51 and the second electrode 52 are to provide connection to an external power source and to inject current from the external power source to the light emitting element.
  • the first electrode 51 and the second electrode 52 can include a plurality of metal layers stacked in sequence, and the materials of the plurality of metal layers can include an ohmic contact layer, a reflective layer, a barrier layer and a wiring layer in sequence, and the metal material is selected from chromium, tungsten, Aluminum, copper, platinum, gold, palladium, titanium, rhodium, other suitable materials, or combinations thereof.
  • the first electrode 51 and the second electrode 52 can be formed by physical vapor deposition, chemical vapor deposition, atomic layer deposition, coating, sputtering or other suitable techniques.
  • the first electrode 51 and/or the second electrode 52 includes a pad part and an extension part, and the extension part is conducive to the lateral expansion of the current, so that the current can be injected into all regions in the second semiconductor layer 23 as much as possible, and the luminous efficiency of the light emitting diode is improved. and luminous uniformity.
  • the insulating protection layer 60 serves as the outermost layer of the light-emitting element and covers the light-emitting surface of the light-emitting element.
  • the insulating protective layer 60 covers the outer periphery of the second electrode 52 and the surface of the transparent conductive layer 30. In other embodiments, it can also cover the inner sidewall of the depression around the first electrode 51 and the outer periphery of the light emitting element. side wall.
  • the refractive index of the insulating protective layer 60 is lower than that of the transparent conductive layer 30 and the light-emitting element, which can promote the light emitted from the semiconductor active layer 22 to pass through the insulating transparent layer as much as possible after passing through the transparent conductive layer 30 or the peripheral sidewall of the light-emitting element.
  • the reflection ratio of the optical layer 30 is reduced, thereby improving the light extraction efficiency.
  • the insulating protection layer 60 can also perform moisture isolation and insulation protection for the side walls of the light-emitting element and the transparent conductive layer 30 around the electrodes.
  • the material of the insulating protection layer 60 is selected from one or a combination of silicon oxide, silicon carbide, silicon nitride, and aluminum oxide, and may be a distributed Bragg structure.
  • a light emitting device including the above light emitting element is provided.

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Abstract

本发明属于半导体技术领域，尤其涉及半导体发光元件和发光装置，包括半导体叠层，该半导体叠层包括：第一半导体层，具有n型掺杂；第二半导体层，位于所述第一半导体层上，具有p型掺杂，所述第二半导体层包括靠近第一半导体层的第一表面和远离第一半导体层的第二表面；有源层，位于所述第一半导体层和第二半导体层之间，所述有源层包括靠近第一半导体层的第三表面和靠近第二半导体层的第四表面；其特征在于：该半导体叠层还包括氢杂质，该氢杂质的浓度至少包括靠近有源层的第一峰值和远离有源层的第二峰值，所述第二峰值大于第一峰值。本发明的发光元件具有高亮度的性能。

Description

半导体发光元件和发光装置 技术领域
本发明属于半导体领域，尤其涉及半导体发光元件和包括该发光元件的发光装置。
 背景技术
近些年来，发光二极管(Light Emitting Diode，LED)半导体技术的发展由于技术的提升，使得芯片发光效率大幅提升，也因此增加在各方面的应用性，例如从投影笔到照明应用等，大幅增加了应用的范围。此外，LED也具有体积小、寿命长、低污染以及低成本等优点，在光学特性上更具有色彩饱和度佳以及动态色彩控制等特点，因此使得LED相关技术成为目前最受瞩目的技术。
 技术解决方案
本发明的目的在于提供一种具有高发光效率的半导体发光元件和包括该发光元件的发光装置。
根据本发明的第一方面，半导体发光元件，包括半导体叠层，该半导体叠层包括：第一半导体层，具有n型掺杂；第二半导体层，位于所述第一半导体层上，具有p型掺杂，所述第二半导体层包括靠近第一半导体层的第三表面和远离第一半导体层的第四表面；有源层，位于所述第一半导体层和第二半导体层之间，所述有源层包括靠近第一半导体层的第一表面和靠近第二半导体层的第二表面；其特征在于： 该半导体叠层还包括氢杂质，该氢杂质的浓度至少包括靠近有源层的第一峰值和远离有源层的第二峰值，所述第二峰值大于第一峰值。
其中，所述第一峰值与第二表面的距离介于3nm~55nm之间，所述第一峰值和第二峰值之间的距离介于50nm~150nm之间，所述第二峰值与第二表面之间的距离小于150nm。所述第一峰值介于5E19 cm -3~1E20cm -3之间，所述第二峰值大于 1E20cm -3。
进一步地，所述氢杂质浓度在所述第一峰值和第一表面之间具有第一低值，在第一峰值和第二峰值之间具有第二低值，所述第一低值小于第二低值。所述第二低值与第一峰值之间的距离大于第二低值与第二峰值之间的距离，所述第二低值与第一峰值之间的距离大于第一峰值与第二表面的距离。所述第二低值小于1E19cm -3，所述第一低值小于5E18cm -3。
本发明同时提供发光装置，其包括上述的半导体发光元件。
 有益效果
本发明设计的半导体发光元件，可以提高发光元件的发光效率、降低电压。
本发明的其他特征和有点将在随后的说明书中阐述，并且，部分地在说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
 附图说明
图1为本发明的其一实施例的半导体发光元件截面结构示意图。
图2为图1中半导体元件的部分范围的元素的浓度或离子强度与深度的关系放大图。
图3为本发明的另一实施例中的半导体发光元件截面结构示意图。
 本发明的实施方式
以下实施例将伴随着附图说明本发明的概念，在附图或说明中，相似或相同的部分是使用相同的标号，并且在附图中，元件的形状或厚度可扩大或缩小。需特别注意的是，图中未绘示或说明书未描述的元件，可以是熟悉此技术的人士所知的形式。
本发明的半导体元件包含的每一层的组成以及掺杂物可用任何适合的方式分析，例如二次离子质谱仪(secondary ion mass spectrometer，SIMS)。
本发明的半导体元件包含的每一层的厚度可用任何适合的方式分析，例如穿透式电子显微镜(transmission electron microscopy，TEM)或是穿透式电子显微镜 (scanningelectron microscope，SEM)，用于配合例如于SIMS图谱上的各层深度位置。
在本发明中，如果没有特别的说明，用语【峰值】是指两段具有彼此相反符号的斜率的线段的相交点的最大值；用语【低值】是指两段具有彼此相反符号的斜率的线段的相交点的最小值。
图1是本发明其一实施例的半导体发光元件的截面结构示意图。图2示出了图1中半导体元件的部分范围的元素的浓度或离子强度与深度的关系放大图。
半导体发光元件包括半导体叠层20，该半导体叠层包括第一半导体层21、有源层22和第二半导体层23，其中有源层22位于第一半导体层21和第二半导体层23之间。第一半导体层21具有n型掺杂，用于提供电子；第二半导体层23具有p型掺杂，用于提供空穴；电子和空穴在有源层22内通过复合辐射发光。
第二半导体层23具有相对的两个表面，包括靠近第一半导体层21的第三表面S3和远离第一半导体层21的第四表面S4。同样地，有源层22具有相对的两个表面，包括靠近第一半导体层21的第一表面S1和靠近第二半导体层23的第二表面S2。当第二半导体层23与有源层22直接接触时，第二表面S2和第三表面S3重叠；然而当第二半导体层23和有源层22之间还插入其他半导体层时，第二表面S2和第三表面S3则不同。本实施例中，第二表面S2和第三表面S3直接接触，两者重叠。
参看附图2，进一步地，半导体叠层20还包括氢杂质H，氢杂质H位于第一表面S1和第四表面S4之间，更进一步地，氢杂质H的信号从靠近第二表面S2的几对量子阱/量子垒中开始出现。此时，位于有源层22上的其中一层或者多层材料层均包含氢杂质H，例如第二半导体层23中均可以检测出氢杂质H的信号。
用SIMS检测发光元件的元素组成，可检测到发光元件具有氢杂质H以及三族元素I，并且氢杂质H的浓度在SIMS检测图谱中呈现波形。本实施例中，三族元素I为铟。除了三族元素之外，半导体发光元件内的其他元素未在图2中显示，例如氮、稼、铝以及硅。
氢杂质H的波形至少包括靠近有源层22的第一峰值V1和远离有源层22的第二峰值V2，具体地，第一峰值V1靠近有源层22的第二表面S2，第二峰值V2远离有源层22的第二表面S2。并且第二峰值V2大于第一峰值V1，具体的是指，第二峰值V2所对应的氢浓度大于第一峰值V1所对应的氢浓度。氢杂质H在靠近第二表面S2的位置达到第一峰值V1，较高浓度的氢杂质H可以使第二半导体层23在该位置产生较大量的空穴，并且促进空穴向有源层22移动，使得在有源层22内与电子复合的空穴浓度增加，提高发光效率。同时，氢杂质H在远离第二表面S2的位置达到第二峰值V2，并且第二峰值V2大于第一峰值V1，本实施例中，氢杂质H在靠近第四表面S4的位置达到第二峰值V2，较高浓度的氢杂质H可以使第二半导体层23在该位置达到较低的电阻值，降低第二半导体层23与后续材料层之间的接触电阻，降低发光元件的启动电压，从而可以实现提供一种高亮度、低电压的发光元件的设计目的。
第一峰值V1与第二表面S2的距离d1介于3nm~55nm之间。第一峰值V1与第二表面S2的距离d1如果较大，例如大于55nm，则无法促进第二半导体层23内的空穴高效进入有源层22内，也即无法有效提高空穴和电子的复合效率，最终无法提高发光效率。
第一峰值V1和第二峰值V2之间的距离d2介于50nm~150nm之间，第二峰值V2与第二表面S2之间的距离d小于150nm。当第二峰值V2与第二表面S2之间的距离d较大时，例如大于150nm，第二半导体层23整体较厚，会产生材料层的吸光问题，在一定程度上降低出光效率。
第一峰值V1介于5E19cm -3~1E20cm -3之间，第二峰值V2大于1E20cm -3。其中，第一峰值V1和第二峰值V2指的是氢杂质波形的峰顶处所对应的氢浓度。
进一步地，氢杂质浓度在第一峰值V1和第一表面S1之间具有第一低值L1，在第一峰值V1和第二峰值V2之间具有第二低值L2。其中，第一低值L1和第二低值L2指的是氢杂质波形的波谷处所对应的氢浓度,并且第一低值L1小于第二低值L2。
第二低值L2与第一峰值V1之间的距离d3大于第二低值L2与第二峰值V2之间的d4距离，第二低值L2与第一峰值d3之间的距离大于第一峰值V1与第二表面S2的距离d1。第二低值L2小于1E19cm -3，第一低值L1小于5E18cm -3。
采用以上所述的发光元件具有高光效、低电压性能。
图3示出了本发明另一实施例的半导体发光元件截面结构示意图。
参看附图3，半导体发光元件包括发光二极管。发光二极管包括基板10、位于基板10上的半导体叠层20以及与半导体叠层20电性连接的第一电极51和第二电极52。
基板10具有一足够厚的厚度用于支撑位于其上的半导体叠层20以及其他结构，基板10可以由导电材料或者绝缘材料制成，导电材料例如砷化镓(GaAs)、磷化铟(InP)、碳化硅(SiC)、磷化镓(GaP)、氧化锌(ZnO)、氮化镓(GaN)、氮化铝(AlN)、锗(Ge)或硅(Si)等；绝缘材料例如蓝宝石(Sapphire)、碳化硅（SiC）、氮化硅（SiN）、玻璃等透明材料。本实施例优选透明的蓝宝石衬底。在一实施例中，半导体叠层20可以通过MOCVD生长的方式形成在基板10上，在另一实施例中，基板10为接合基板而非成长基板，半导体叠层20通过转移工艺转移至基板10上。为了提高基板10的出光效率，还可以对其进行图形化处理，在其表面形成一系列凹凸结构。
其中的半导体叠层20为上述的半导体叠层。本实施方式的半导体叠层包括缓冲层24、第一半导体层21、应力释放层25、有源层22和第二半导体层23，第一电极51和第二电极52分别与第一半导体层21和第二半导体层23电性连接。第一半导体层21和第二半导体层23具有相反的导电形态，第一半导体层21具有n型掺杂提供电子，第二半导体层具有p型掺杂提供空穴，电子和空穴在有源层22中复合发光。n型杂质例如硅，P型杂质例如镁，但本发明对杂质种类并不作限制。
缓冲层24，用于减小基板10和第一半导体层21两者之间的晶格失配，因此缓冲层24的晶格常数介于基板10和第一半导体层21之间，可以由包括AlpInqGa1-p-qN的材料制成，其中0≤p≤1，0≤q≤1，具体可以为AlN层、GaN层、AlGaN层、AlInGaN层、InN层和InGaN层。缓冲层24的形成方式可以为MOCVD法或者PVD法。
生长应力释放层25，以释放第一半导体层21生长过程中产生的应力，还可以调节V型坑的大小，提高发光亮度。应力释放层25可以是超晶格结构，例如由InGaN和GaN交替层叠形成的超晶格结构，也可以是单层结构。
有源层22设置在第一半导体层21和第二半导体层23之间，可以包括同质结、异质结、单一量子阱、多重量子阱或其他类似的结构。本实施例中，有源层22包括交替层叠的量子阱层221和量子垒层222，量子阱层221的作用是使电子和空穴能够复合发光，量子垒层222的能级大于阱层221的能级，量子垒层222的作用是将电子和空穴限制在量子阱层221内复合发光。最靠近第一半导体层21一侧的有源层22可以是量子阱层221或者量子垒层222，最靠近第二半导体层23一侧的有源层22可以是量子垒层222或者量子阱层221。量子垒层222可以是含铝或者不含铝的氮化物层，具有较高的能级，例如AlGaN或者GaN,量子垒层222可以是n型掺杂层或者实质上不含任何杂质的非掺杂层。量子阱层221通常为含铟的氮化物层，具有较低的能级，例如InGaN。
在本实施例中，所有量子垒层222的厚度大致相同,所有量子阱层221的厚度大致相同，在其他实施例中，量子垒层222的厚度可以变化，量子阱层221的厚度也可以根据量子垒层222的厚度相应地调整使其进行匹配。最后一个量子垒层222可以为未掺杂层，可以是单层结构或者为多层结构，例如可以是未掺杂单层结构的AlN、AlGaN或者AlInGaN，或者未掺杂多层结构的u-GaN/u-AlGaN，u-InGaN/u-AlInGaN/u-AlGaN或者u-GaN/AlN。
第一半导体层21、有源层22和第二半导体层23的生长方式包含但不限于金属有机化学气相沉积(meta l-orga nicchemical va por d eposition，MOCVD) 、氢化物气相外延法(hyd rid e va por phaseepitaxial，HVPE)、液相晶体外延生长(liquid-phase epitaxy，LPE)、分子束外延（molecular beam epitaxy，MBE）、或者离子镀，例如溅镀或蒸镀等方式形成。
本实施例中，第二半导体层23向第一半导体层21延伸形成凹陷A，第一电极51位于凹陷A的表面，第二电极52位于第二半导体层23的表面。如此，第一电极51和第二电极52位于基板10的同一侧。在另一实施例中，第一电极51和第二电极52也可以位于基板10的相对的两侧。
第二电极52和第二半导体层23之间还可以包括透明导电层30，透明导电层30可以促使由第二电极52注入的电流横向扩散并传递至半导体层，使得第一半导体层21和第二半导体层53产生电子以及空穴。透明导电层30覆盖在第二半导体层23的上表面。在其他实施例中，透明导电层23还可以同时覆盖凹陷A底部的第一半导体层21的上表面，进一步促进电流的扩展。
透明导电层30的材料为透明导电材料，例如选自铟锡氧化物（ITO）、氧化锡（TO）、氧化锌（ZnO）、氧化铟锌（IZO）、氧化铟稼锌（IGZO）、氧化铟锡锌（ITZO）、氧化锑锡（ATO）、氧化锑锌（AZO）、石墨烯（Graphene）中的一种或者至少两种的组合，以及其他适合的透明导电氧化物材料。
透明导电层30在第二半导体层23的上表面的覆盖面积占比至少80%以上，更佳的是覆盖面积占比至少90%以上。透明导电层30可以通过镀膜工艺形成，例如溅镀，也可以根据需要通过蚀刻工艺形成不同图案。并且，在镀膜后，进行高温退火处理以实现透明导电层30与第二半导体层23之间具有良好的欧姆接触。
第一电极51和/或第二电极52分别与第二半导体层23之间还设有局部电流阻挡层40，电流阻挡层40由透明绝缘材料形成，例如氧化硅、碳化硅、氮化硅、三氧化二铝中的一种或者几种的组合，可以为分别布拉格结构。电流阻挡层40局部阻挡电流从第二电极52和/或第一电极51与第二半导体层23之间形成纵向的电流传输。电流阻挡层40的形状可以是环形、圆形或者方形，为一块或者多块，可以根据电流阻挡的需求而选择设计。
第一电极51和第二电极52的主要作用是提供外部电源连接，并且从外部电源注入电流至发光元件。第一电极51和第二电极52可以包括依次层叠的多个金属层，多个金属层的材料可以依次包括欧姆接触层、反射层、阻挡层以及打线层，金属材料选自铬、钨、铝、铜、铂、金、钯、钛、铑、其他适合的材料，或者上述材料的组合。第一电极51和第二电极52可以通过物理气相沉积法、化学气相沉积法、原子层沉积法、涂布、溅镀或者其他适合的技术形成。第一电极51和/或第二电极52包括焊盘部和延伸部，延伸部利于电流的横向扩展，使电流能够尽可能地注入第二半导体层23内的所有区域，提高发光二极管的发光效率和发光均匀性。
绝缘保护层60作为发光元件的最外层，覆盖在发光元件的出光面上。本实施例中，绝缘保护层60覆盖在第二电极52的外周以及透明导电层30的表面，在其他实施例中，还可以覆盖第一电极51周围的凹陷的内侧壁上以及发光元件的外围侧壁。绝缘保护层60的折射率低于透明导电层30和发光元件的折射率，可以促进从半导体有源层22发出的光透过透明导电层30或者发光元件的外围侧壁之后能尽量通过绝缘透光层30，反射比例降低，由此提升出光效率。绝缘保护层60还可以对发光元件的侧壁以及电极周围的透明导电层30进行水汽隔离以及绝缘保护。绝缘保护层60的材料选自氧化硅、碳化硅、氮化硅、三氧化二铝中的一种或者几种的组合，可以为分布布拉格结构。
本发明的另一实施例中，提供包括上述发光元件的发光装置。
需注意的是，本发明所列举的各实施例仅用以说明本发明，并非用以限制本发明的范围。任何人对本发明所作显而易见的修饰或变更都不脱离本发明的精神与范围。不同实施例中相同或相似的构件，或者不同实施例中具相同标号的构件都具有相同的物理或化学特性。此外，本发明中上述的实施例在适当的情况下，是可互相组合或替换，而非仅限于所描述的特定实施例。在一实施例中详细描述的特定构件与其他构件的连接关系也可以应用于其他实施例中，且均落于所附的本发明的权利要求保护范围的范畴中。

Claims (12)

  1. 半导体发光元件，包括半导体叠层，该半导体叠层包括：
    第一半导体层，具有n型掺杂；
    第二半导体层，位于所述第一半导体层上，具有p型掺杂，所述第二半导体层包括靠近第一半导体层的第三表面和远离第一半导体层的第四表面；
    有源层，位于所述第一半导体层和第二半导体层之间，所述有源层包括靠近第一半导体层的第一表面和靠近第二半导体层的第二表面；
    其特征在于： 该半导体叠层还包括氢杂质，该氢杂质的浓度至少包括靠近有源层的第一峰值和远离有源层的第二峰值，所述第二峰值大于第一峰值。
  2. 根据权利要求1所述的半导体发光元件，其特征在于：所述第一峰值与第二表面的距离介于3nm~55nm之间。
  3. 根据权利要求1所述的半导体发光元件，其特征在于：所述第一峰值和第二峰值之间的距离介于50nm~150nm之间。
  4. 根据权利要求1所述的半导体发光元件，其特征在于：所述第二峰值与第二表面之间的距离小于150nm。
  5. 根据权利要求1所述的半导体发光元件，其特征在于：所述第一峰值介于5E19cm -3~1E20cm -3之间。
  6. 根据权利要求1所述的半导体发光元件，其特征在于：所述第二峰值大于1E20cm -3。
  7. 根据权利要求1所述的半导体发光元件，其特征在于：所述氢杂质浓度在所述第一峰值和第一表面之间具有第一低值，在第一峰值和第二峰值之间具有第二低值，所述第一低值小于第二低值。
  8. 根据权利要求7所述的半导体发光元件，其特征在于：所述第二低值与第一峰值之间的距离大于第二低值与第二峰值之间的距离。
  9. 根据权利要求7所述的半导体发光元件，其特征在于：所述第二低值与第一峰值之间的距离大于第一峰值与第二表面的距离。
  10. 根据权利要求7所述的半导体发光元件，其特征在于：所述第二低值小于1E19cm -3。
  11. 根据权利要求7所述的半导体发光元件，其特征在于：所述第一低值小于5E18cm -3。
  12. 发光装置，其特征在于：包括权利要求1~11任意一项的半导体发光元件。
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US20040166599A1 (en) * 2000-02-10 2004-08-26 Sharp Kabushiki Kaisha Semiconductor light emitting device and method for producing the same
CN1941442A (zh) * 2005-09-30 2007-04-04 日立电线株式会社 半导体发光元件
CN101069289A (zh) * 2004-12-23 2007-11-07 Lg伊诺特有限公司 氮化物半导体发光器件及其制造方法
CN108598224A (zh) * 2018-05-31 2018-09-28 华灿光电（浙江）有限公司 一种发光二极管外延片的制作方法及其发光二极管外延片
CN111403565A (zh) * 2020-03-27 2020-07-10 安徽三安光电有限公司 发光二极管及其制作方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040166599A1 (en) * 2000-02-10 2004-08-26 Sharp Kabushiki Kaisha Semiconductor light emitting device and method for producing the same
CN101069289A (zh) * 2004-12-23 2007-11-07 Lg伊诺特有限公司 氮化物半导体发光器件及其制造方法
CN1941442A (zh) * 2005-09-30 2007-04-04 日立电线株式会社 半导体发光元件
CN108598224A (zh) * 2018-05-31 2018-09-28 华灿光电（浙江）有限公司 一种发光二极管外延片的制作方法及其发光二极管外延片
CN111403565A (zh) * 2020-03-27 2020-07-10 安徽三安光电有限公司 发光二极管及其制作方法

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