WO2018205360A1 - 一种oled器件及oled器件的制作方法 - Google Patents
一种oled器件及oled器件的制作方法 Download PDFInfo
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- WO2018205360A1 WO2018205360A1 PCT/CN2017/089608 CN2017089608W WO2018205360A1 WO 2018205360 A1 WO2018205360 A1 WO 2018205360A1 CN 2017089608 W CN2017089608 W CN 2017089608W WO 2018205360 A1 WO2018205360 A1 WO 2018205360A1
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- oled device
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- electron transport
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- 239000011149 active material Substances 0.000 claims abstract description 60
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- ZTLUNQYQSIQSFK-UHFFFAOYSA-N n-[4-(4-aminophenyl)phenyl]naphthalen-1-amine Chemical compound C1=CC(N)=CC=C1C(C=C1)=CC=C1NC1=CC=CC2=CC=CC=C12 ZTLUNQYQSIQSFK-UHFFFAOYSA-N 0.000 description 2
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- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
Definitions
- the present invention relates to the field of organic electroluminescent devices, and in particular, to a dual-function OLED device for electroluminescence and photoelectric conversion and a method for fabricating the same.
- Organic optoelectronic devices are attracting more and more attention, especially organic electroluminescent devices (English full name Organic) Light-Emitting Diode (referred to as OLED), because of its solid-state illumination, wide viewing angle, wide color gamut, low power consumption, fast response, high and low temperature resistance, light and thin, and other excellent characteristics, it is suitable for low carbon environmental protection and green in the world today.
- OLED Organic Light-Emitting Diode
- the requirements of life have been widely used in various fields of daily production and life such as flat panel display and solid state lighting.
- the traditional organic optoelectronic devices also have some problems: the traditional organic optoelectronic devices have a single function, which is not conducive to the formation of all-organic flexible integrated circuits.
- conventional OLEDs only have electroluminescence functions and do not have photoelectric conversion functions.
- the present invention provides an OLED device comprising: a substrate, and a first electrode layer, an electron injection layer, an electron transport layer, a photoactive layer, a hole transport layer, and a second electrode layer, which are sequentially disposed on the substrate; ,
- the photoactive layer includes an exciton control layer and an active material layer
- the active material layer includes: a perovskite material and a small molecule luminescent material, and the doping molar ratio of the small molecule luminescent material is 0.1%-15% ;
- the perovskite material is a material of the formula ABX3, wherein A represents an organic ammonium group; B represents a fourth main group metal or a transition metal; and X represents a combination of a monohalogen or a polyhalogen element;
- the small molecule luminescent material is a fluorescent material or a phosphorescent material.
- the material of the exciton control layer is an electron transport type material
- the energy level of the electron transport type material is between the energy level of the material of the electron transport layer and the active material layer.
- the energy levels of the material are between and the exciton control layer is between the electron transport layer and the active material layer.
- the material of the exciton control layer is a hole transport type material
- the energy level of the hole transport type material is between the energy level of the material of the hole transport layer and the activity
- the energy level of the material of the material layer is between the hole transport layer and the active material layer.
- the present invention also provides an OLED device comprising: a substrate, and a first electrode layer, an electron injection layer, an electron transport layer, a photoactive layer, a hole transport layer, and a second electrode layer, which are sequentially disposed on the substrate; among them,
- the photoactive layer includes an exciton control layer and an active material layer, and the material of the active material layer includes: a perovskite material and a small molecule luminescent material, and the doping molar ratio of the small molecule luminescent material is 0.1%- 15%.
- the material of the exciton control layer is an electron transport type material
- the energy level of the electron transport type material is between the energy level of the material of the electron transport layer and the active material layer.
- the energy levels of the material are between and the exciton control layer is between the electron transport layer and the active material layer.
- the material of the exciton control layer is a hole transport type material
- the energy level of the hole transport type material is between the energy level of the material of the hole transport layer and the activity
- the energy level of the material of the material layer is between the hole transport layer and the active material layer.
- the perovskite material is a material of the formula ABX3, wherein A represents an organic ammonium group; B represents a fourth main group metal or a transition metal; and X represents a monohalogen or polyhalogen A combination of family elements.
- the small molecule luminescent material is a fluorescent material or a phosphorescent material.
- a method for fabricating an OLED device further comprising: sequentially forming a first electrode layer, an electron injection layer, an electron transport layer, a photoactive layer, a hole transport layer, and a second electrode on a substrate Layer; among them,
- the photoactive layer includes an exciton control layer and an active material layer, and the material of the active material layer includes: a perovskite material and a small molecule luminescent material, and the doping molar ratio of the small molecule luminescent material is 0.1%- 15%.
- the energy level of the electron transport type material is between the energy level of the material of the electron transport layer between the energy levels of the materials of the active material layer
- the step of forming the photoactive layer comprises:
- the active material layer is formed on the exciton control layer.
- the energy level of the hole transport type material is different from the material of the hole transport layer.
- the step of forming the photoactive layer comprises:
- the exciton control layer is formed on the active material layer.
- the perovskite material is a material of the formula ABX3, wherein A represents an organic ammonium group; B represents a fourth main group metal or transition metal; and X represents a monohalogen element. Or a combination of polyhalogen elements.
- the small molecule luminescent material is a fluorescent material or a phosphorescent material.
- the OLED device and the OLED device are manufactured by using a photoactive layer composed of an exciton control layer and an active material layer in an OLED device, and the material of the active material layer comprises: a perovskite material and a small molecule luminescent material.
- FIG. 1 is a first schematic structural view of an OLED device according to a preferred embodiment of the present invention.
- FIG. 2 is a schematic view showing a second structure of an OLED device according to a preferred embodiment of the present invention.
- FIG. 1 is a first schematic structural diagram of an OLED device according to a preferred embodiment of the present invention
- FIG. 2 is a second schematic structural diagram of an OLED device according to a preferred embodiment of the present invention
- the OLED device 10 of the present invention comprises: a substrate 101, and a first electrode layer 102, an electron injection layer 103, an electron transport layer 104, and a photoactive layer 105, which are sequentially disposed on the substrate 101.
- the material of the active material layer 1052 includes: a perovskite material and a small molecule luminescent material. And the doping molar ratio of the small molecule luminescent material is 0.1%-15%.
- the energy level of the electron transport type material should be between the energy level of the material of the electron transport layer 104 and the active material layer 1052.
- the energy levels of the material are between and the exciton control layer 1051 is located between the electron transport layer 104 and the active material layer 1052.
- the energy level of the material of the hole transport type material is between the material of the hole transport layer 106 and the active material layer.
- the energy level of the material of 1052 is between the hole transport layer 106 and the active material layer 1052.
- the OLED device 10 of the preferred embodiment can set the position of the exciton control layer 1051 and the active material layer 1052 in the photoactive layer 105 in the OLED device 10 according to materials used in the exciton control layer, thereby further improving the power of the OLED device 10.
- the effect of the luminescence and photoelectric conversion functions can be set according to materials used in the exciton control layer, thereby further improving the power of the OLED device 10. The effect of the luminescence and photoelectric conversion functions.
- the OLED device 10 of the preferred embodiment can simultaneously realize the functions of electroluminescence and photoelectric conversion in one device by using the active layer 105 composed of a perovskite material, a small molecule luminescent material, and an exciton control layer material.
- the OLED device 10 operates on the following principle: when the potential applied to the second electrode layer 107 is higher than the potential applied to the first electrode layer 102, holes pass through the hole transport layer from the second electrode layer 107. After 106, the photoactive layer 105 is reached and electrons are passed from the first electrode layer 102 through the electron injection layer 103 and the electron transport layer 104 to the photoactive layer 105 to form an exciton, and the excitons are deactivated to emit light, and the device is in a state of electricity at this time.
- the perovskite material is a material of the formula ABX3, wherein A represents an organic ammonium group; B represents a fourth main group metal or a transition metal; and X represents a combination of a monohalogen or a polyhalogen. Further, A may be any one of an alkylamine, an aromatic amine, and a diamine; B may be any one of the fourth main group metals Pb, Ge, and Sn, or may be a transition metal Cu, Ni, Co.
- X is any one of monohalogen elements Cl, Br, and I
- the perovskite material is CH3NH3PbBr3.
- the small molecule luminescent material may be a fluorescent material or a phosphorescent material, and the molar ratio of the small molecule luminescent material in the photoactive layer is between 0.1% and 15%.
- the substrate may be a transparent substrate, a glass substrate or a flexible substrate, and the flexible substrate is made of one of a polyester or a polyimide compound.
- the first electrode layer is made of a metal having a lower work function such as lithium, magnesium, calcium, barium, aluminum or indium or an alloy thereof with copper, gold or silver, or an electrode layer formed by alternating metal and metal fluoride, for example, Mg: Ag alloy layer and Ag layer, sequential lithium fluoride or lithium nitride layer and Ag layer, sequential lithium fluoride or lithium nitride layer and Al layer. It is also possible to use one of inorganic materials ITO, FTO, or transparent conductive polymers PEDOT: PSS, PANI.
- the electron injecting layer is one of graphene, carbon nanotubes, ZnO, TiO2, and Cs2CO3.
- the electron transport layer may be 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBi), One of batholine (BCP) and tris(8-hydroxyquinoline)aluminum (Alq3).
- the hole transport layer is any one of an aromatic diamine compound, an aromatic triamine compound, a carbazole compound, a triphenylamine compound, a furan compound, a spiro structure compound, and a polymer material.
- the second electrode layer is made of a metal having a higher work function such as copper, gold or silver or an alloy thereof, or an electrode layer in which a metal and a metal oxide are alternately formed, such as ITO/Ag/ITO. It is also possible to use one of inorganic material ITO or transparent conductive polymer PEDOT: PSS, PANI.
- the OLED device of the present invention comprises a photoactive layer composed of an exciton control layer and an active material layer in an OLED device, the material of the active material layer comprising: a perovskite material and a small molecule luminescent material, thereby realizing the same device
- the functions of electroluminescence and photoelectric conversion are greatly improved, the functional integration of the device is greatly improved, the processing time is shortened, the manufacturing cost is greatly reduced, and the electroluminescence performance of the device can be remarkably improved.
- the present invention also provides a method of fabricating an OLED device, comprising: sequentially forming a first electrode layer, an electron injection layer, an electron transport layer, a photoactive layer, a hole transport layer, and a second electrode layer on a substrate; wherein, photoactive
- the layer includes an exciton control layer and an active material layer, and the material of the active material layer comprises: a perovskite material and a small molecule luminescent material, and the doping molar ratio of the small molecule luminescent material is 0.1%-15%.
- the step of forming the photoactive layer includes: forming excitons on the electron transport layer a control layer; forming an active material layer on the exciton control layer.
- the step of forming the photoactive layer includes: forming an activity on the electron transport layer a material layer; an exciton control layer is formed on the active material layer.
- the substrate may be a glass substrate
- the first electrode layer may be ITO
- the electron injection layer may be ZnO
- the electron transport layer may be 1,3,5-tris(N-phenylbenzimidazole-2- Benzene (TPBi)
- the active material layer can be doped with small molecule luminescent material CH3NH3PbBr3
- the exciton control layer can be 4,4',4''-tris(carbazol-9-yl)triphenylamine (TCTA)
- the hole transport layer may be N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, and the second electrode layer may be used. Au.
- the glass substrate coated with the ITO transparent conductive layer is ultrasonicated in a commercial cleaning agent, rinsed in deionized water, ultrasonicated in an isopropanol solvent, baked in a clean environment to completely remove moisture, and then Cleaning with ultraviolet light and ozone, and bombarding the surface with a low-energy oxygen plasma;
- a ZnO precursor solution was prepared by spin coating on the above substrate, and then annealed at 200 ° C for 1 h in the air to form an electron injecting layer.
- the glass substrate with the electron injecting layer is placed in a vacuum chamber, vacuumed to 2 ⁇ 10 ⁇ 4 Pa or less, and TPBi is vacuum-deposited on the electron injecting layer as an electron transporting layer, and the evaporation rate is 0.1 nm/ s, the evaporation thickness is 20 nm;
- the substrate is moved to a glove box, a certain proportion of the small molecule luminescent material is dissolved in the CH3NH3PbBr3 solution, and the CH3NH3PbBr3 solution doped with the small molecule luminescent material is spin-coated, and then annealed at 90 ° C for 10 min to form an active material layer, and then the substrate is formed.
- a vacuum chamber to prepare an exciton control layer TCTA, an evaporation rate of 0.05 nm / s, a thickness of 5 nm, thereby forming a photoactive layer;
- NPB was deposited as a hole transport layer on the photoactive layer, the evaporation rate was 0.1 nm/s, and the vapor deposition film thickness was 30 nm; and Au was vapor-deposited on the hole transport layer as the second electrode layer, and evaporation was performed. Thickness is 100 Nm.
- the substrate may be a glass substrate
- the first electrode layer may be ITO
- the electron injection layer may be ZnO
- the electron transport layer may be 1,3,5-tris(N-phenylbenzimidazole- 2-based) benzene (TPBi)
- active material layer can be doped with small molecule luminescent material CH3NH3PbBr3
- exciton control layer can be bath copper spirit (BCP)
- hole transport layer can be N, N'-diphenyl -N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB)
- the second electrode layer may be Au.
- the glass substrate coated with the ITO transparent conductive layer is ultrasonicated in a commercial cleaning agent, rinsed in deionized water, ultrasonicated in an isopropanol solvent, baked in a clean environment to completely remove moisture, and then Cleaning with ultraviolet light and ozone, and bombarding the surface with a low-energy oxygen plasma;
- a ZnO precursor solution was prepared by spin coating on the above substrate, and then annealed at 200 ° C for 1 h in the air to form an electron injecting layer.
- the glass substrate with the electron injecting layer is placed in a vacuum chamber, vacuumed to 2 ⁇ 10 ⁇ 4 Pa or less, and TPBi is vacuum-deposited on the electron injecting layer as an electron transporting layer, and the evaporation rate is 0.1 nm/ s, the evaporation thickness is 20 nm;
- an exciton control layer BCP is prepared by evaporation, the evaporation rate is 0.05 nm/s, and the thickness is 5 nm; then the substrate is moved to a glove box, and a certain proportion of the small molecule luminescent material is dissolved in the CH3NH3PbBr3 solution in advance, and swirled. Applying a solution of a small molecule luminescent material CH3NH3PbBr3, and then annealing at 90 ° C for 10 min, forming an active material layer, finally forming a photoactive layer 5;
- NPB was vapor-deposited on the photoactive layer 5 as the hole transport layer 6, the evaporation rate was 0.1 nm/s, the vapor deposition film thickness was 30 nm, and Au was vapor-deposited on the hole transport layer 6 as the second electrode layer. 7, evaporation thickness is 100 Nm.
- the OLED device formed in the method for fabricating the OLED device of the present invention is the same as the OLED device described in the above embodiments.
- the OLED device and the OLED device are manufactured by using a photoactive layer composed of an exciton control layer and an active material layer in an OLED device, and the material of the active material layer comprises: a perovskite material and a small molecule luminescent material.
Abstract
一种OLED器件（10）及OLED器件的制作方法，其包括基板（101）、及依次设置在基板上的第一电极层（102）、电子注入层（103）、电子传输层（104）、光活性层（105）、空穴传输层（106）以及第二电极层（107）；其中，光活性层包括激子调控层（1051）以及活性材料层（1052），活性材料层的材料包括：钙钛矿材料及小分子发光材料，且小分子发光材料的掺杂摩尔比为0.1％-15％。
Description
本发明涉及有机电致发光器件领域，尤其涉及一种电致发光和光电转换的双功能的OLED器件及OLED器件的制作方法。
有机光电子器件越来越受到人们的关注，尤其是有机电致发光器件(英文全称为Organic
Light-Emitting
Diode，简称为OLED)，因其具有固态发光、视角宽、色域广、功耗低、响应速度快、耐高低温、轻薄可卷曲等一系列优异特性，适用在当今世界低碳环保、绿色生活的要求，并已广泛应用于平板显示和固态照明等日常生产和生活的各个领域。
近年来，使用OLED屏的可穿戴式电子设备越来越受到消费者的喜爱，如智能手表、智能手环、智能眼镜等。这类设备都有一个共同的特点，即功能集成度高，除了显示信息外，通常还要实现其他实用功能，而这些实用功能通常是在终端中集成其他组部件来实现，不利于缩减终端的体积。
另外，传统的有机光电子器件也存在一些问题：传统的有机光电子器件的功能单一，不利于形成全有机柔性集成电路，比如传统的OLED只具备电致发光功能，而不具备光电转换功能。
故，有必要提供一种OLED器件及OLED器件的制作方法，以解决现有技术所存在的问题。
本发明的目的在于提供一种OLED器件及OLED器件的制作方法，可以同时在一个器件中实现电致发光和光电转换的功能。
本发明提供一种OLED器件，其包括：基板、及依次设置在所述基板上的第一电极层、电子注入层、电子传输层、光活性层、空穴传输层以及第二电极层；其中，
所述光活性层包括激子调控层以及活性材料层，所述活性材料层包括：钙钛矿材料及小分子发光材料，且所述小分子发光材料的掺杂摩尔比为0.1%-15%；
所述钙钛矿材料是化学式为ABX3的材料，其中，A代表有机铵基团；B代表第四主族金属或过渡金属；X代表一元卤族元素或多元卤族元素的组合；
所述小分子发光材料为荧光材料或磷光材料。
在本发明的OLED器件中，所述激子调控层的材料为电子传输型材料，所述电子传输型材料的能级介于所述电子传输层的材料的能级与所述活性材料层的材料的能级之间，且所述激子调控层位于所述电子传输层与所述活性材料层之间。
在本发明的OLED器件中，所述激子调控层的材料为空穴传输型材料，所述空穴传输型材料的能级介于所述空穴传输层的材料的能级与所述活性材料层的材料的能级之间，且所述激子调控层位于所述空穴传输层与所述活性材料层之间。
本发明还提供一种OLED器件，其包括：基板、及依次设置在所述基板上的第一电极层、电子注入层、电子传输层、光活性层、空穴传输层以及第二电极层；其中，
所述光活性层包括激子调控层以及活性材料层，所述活性材料层的材料包括：钙钛矿材料及小分子发光材料，且所述小分子发光材料的掺杂摩尔比为0.1%-15%。
在本发明的OLED器件中，所述激子调控层的材料为电子传输型材料，所述电子传输型材料的能级介于所述电子传输层的材料的能级与所述活性材料层的材料的能级之间，且所述激子调控层位于所述电子传输层与所述活性材料层之间。
在本发明的OLED器件中，所述激子调控层的材料为空穴传输型材料，所述空穴传输型材料的能级介于所述空穴传输层的材料的能级与所述活性材料层的材料的能级之间，且所述激子调控层位于所述空穴传输层与所述活性材料层之间。
在本发明的OLED器件中，所述钙钛矿材料是化学式为ABX3的材料，其中，A代表有机铵基团；B代表第四主族金属或过渡金属；X代表一元卤族元素或多元卤族元素的组合。
在本发明的OLED器件中，所述小分子发光材料为荧光材料或磷光材料。
依据本发明的上述目的，还提供一种OLED器件的制作方法，其包括：在基板上依次形成第一电极层、电子注入层、电子传输层、光活性层、空穴传输层以及第二电极层；其中，
所述光活性层包括激子调控层以及活性材料层，所述活性材料层的材料包括：钙钛矿材料及小分子发光材料，且所述小分子发光材料的掺杂摩尔比为0.1%-15%。
在本发明的OLED器件的制作方法中，当所述激子调控层的材料为电子传输型材料时，所述电子传输型材料的能级介于所述电子传输层的材料的能级与所述活性材料层的材料的能级之间，形成所述光活性层的步骤，包括：
在所述电子传输层上形成所述激子调控层；
在所述激子调控层上形成所述活性材料层。
在本发明的OLED器件的制作方法中，当所述激子调控层的材料为空穴传输型材料时，所述空穴传输型材料的能级介于所述空穴传输层的材料的能级与所述活性材料层的材料的能级之间，形成所述光活性层的步骤，包括：
在所述电子传输层上形成所述活性材料层；
在所述活性材料层上形成所述激子调控层。
在本发明的OLED器件的制作方法中，所述钙钛矿材料是化学式为ABX3的材料，其中，A代表有机铵基团；B代表第四主族金属或过渡金属；X代表一元卤族元素或多元卤族元素的组合。
在本发明的OLED器件的制作方法中，所述小分子发光材料为荧光材料或磷光材料。
本发明的OLED器件及OLED器件的制作方法，通过在OLED器件中使用激子调控层和活性材料层组成的光活性层，该活性材料层的材料包括：钙钛矿材料及小分子发光材料，从而实现在同一个器件中实现电致发光和光电转换的功能，大大提高了器件的功能集成度，缩短了制程时间，大幅缩减制造成本，并且可以显著提高器件的电致发光性能。
为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
图1为本发明优选实施例提供的OLED器件的第一结构示意图；
图2为本发明优选实施例提供的OLED器件的第二结构示意图。
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
参阅图1、图2，图1为本发明优选实施例提供的OLED器件的第一结构示意图；图2为本发明优选实施例提供的OLED器件的第二结构示意图。如图1、图2所示，本发明的OLED器件10，其包括：基板101、及依次设置在基板101上的第一电极层102、电子注入层103、电子传输层104、光活性层105、空穴传输层106以及第二电极层107，其中，该光活性层105包括激子调控层1051以及活性材料层1052，该活性材料层1052的材料包括：钙钛矿材料及小分子发光材料，且该小分子发光材料的掺杂摩尔比为0.1%-15%。
如图1所示，当该激子调控层1051采用的材料为电子传输型材料时，应使该电子传输型材料的能级介于电子传输层104的材料的能级与活性材料层1052的材料的能级之间，且激子调控层1051位于电子传输层104与活性材料层1052之间。
如图2所示，当该激子调控层1051的材料为空穴传输型材料时，应使该空穴传输型材料的能级介于空穴传输层106的材料的能级与活性材料层1052的材料的能级之间，且激子调控层1051位于空穴传输层106与活性材料层1052之间。
本优选实施例的OLED器件10可以根据激子调控层采用的材料设置光活性层105中激子调控层1051和活性材料层1052在该OLED器件10中的位置，从而进一步提高OLED器件10的电致发光和光电转换功能的效果。
本优选实施例的OLED器件10通过使用钙钛矿材料、小分子发光材料以及激子调控层材料组成的活性层105，可以同时在一个器件中实现电致发光和光电转换的功能。
具体地，该OLED器件10工作原理如下：当施加在第二电极层107上的电位比施加在第一电极层102上的电位高时，空穴从第二电极层107上经空穴传输层106后到达光活性层105且电子从第一电极层102经电子注入层103和电子传输层104后到达光活性层105进行复合形成激子，激子失活辐射发光，该器件此时处于电致发光模式；当施加在第二电极层107上的电位比施加在第一电极层102上的电位低时，此时在外界特定波段的光的照射下，光活性层105中产生激子，激子在第一电极层102与第二电极层107形成的电场的作用下，分离形成空穴和电子，空穴经空穴传输层106传至第二电极层107，电子经电子传输层104和电子注入层103传至第一电极层102，从而形成电流，该器件此时处于光电转换模式。
下面对苯优选实施例中每一层结构中采用的材料进行详细的说明，本领域技术人员可根据需要合理选择每一层结构中使用的材料。
该钙钛矿材料是化学式为ABX3的材料，其中，A代表有机铵基团；B代表第四主族金属或过度金属；X代表一元卤族元素或多元卤族元素的组合。进一步的，A可以为烷基胺、芳香胺和二胺中的任意一种；B可以是第四主族金属Pb、Ge、Sn中的任意一种，也可以是过渡金属Cu、Ni、Co、Fe2、Mn、Eu中的任意一种；X是一元卤族元素Cl、Br和I中的任意一种，X也可以是多元卤族元素的组合，具有如下结构通式：ClxBryIz，其中，x+y+z=3，本优选实施例的OLED器件的发光光色以及光电转换的对应波段可以通过选择活性材料来调节，本领域技术人员可根据需要合理选择钙钛矿材料。优选的，该钙钛矿材料为CH3NH3PbBr3。
该小分子发光材料可以为荧光材料或磷光材料，并且该小分子发光材料在光活性层中的摩尔比介于0.1%-15%之间。
该基板可以是透明基板、玻璃基板或柔性基板，柔性基板采用聚酯类、聚酰亚胺类化合物中的一种材料。
该第一电极层采用锂、镁、钙、锶、铝、铟等功函数较低的金属或它们与铜、金、银的合金，或金属与金属氟化物交替形成的电极层，如，依次的Mg:Ag合金层与Ag层、依次的氟化锂或氮化锂层与Ag层、依次的氟化锂或氮化锂层与Al层。也可以采用无机材料ITO、FTO，或透明导电聚合物PEDOT：PSS、PANI中的一种。
该电子注入层为石墨烯、碳纳米管、ZnO、TiO2、Cs2CO3中的一种。
该电子传输层可以是4,7-二苯基-1,10-菲罗啉（Bphen）、1,3,5-三(N-苯基苯并咪唑-2-基)苯（TPBi）、浴铜灵(BCP）、三(8-羟基喹啉)铝（Alq3）中的一种。
该空穴传输层为芳香族二胺类化合物、芳香族三胺类化合物、咔唑类化合物、三苯胺类化合物、呋喃类化合物、螺形结构化合物、聚合物材料中的任意一种。
该第二电极层采用铜、金、银等功函数较高的金属或它们的合金，或金属与金属氧化物交替形成的电极层，如ITO/Ag/ITO。也可以采用无机材料ITO，或透明导电聚合物PEDOT：PSS、PANI中的一种。
本发明的OLED器件，通过在OLED器件中使用激子调控层和活性材料层组成的光活性层，该活性材料层的材料包括：钙钛矿材料及小分子发光材料，从而实现在同一个器件中实现电致发光和光电转换的功能，大大提高了器件的功能集成度，缩短了制程时间，大幅缩减制造成本，并且可以显著提高器件的电致发光性能。
本发明还提供一种OLED器件的制作方法，其包括在基板上依次形成第一电极层、电子注入层、电子传输层、光活性层、空穴传输层以及第二电极层；其中，光活性层包括激子调控层以及活性材料层，活性材料层的材料包括：钙钛矿材料及小分子发光材料，且小分子发光材料的掺杂摩尔比为0.1%-15%。
当激子调控层的材料的能级介于电子传输层的材料的能级与活性材料层的材料的能级之间时，形成光活性层的步骤，包括：在电子传输层上形成激子调控层；在激子调控层上形成活性材料层。
当激子调控层的材料的能级介于空穴传输层的材料的能级与活性材料层的材料的能级之间时，形成光活性层的步骤，包括：在电子传输层上形成活性材料层；在活性材料层上形成激子调控层。
在制造OLED器件时，基板可采用玻璃基板，第一电极层可采用ITO，电子注入层可采用ZnO，电子传输层可采用1,3,5-三(N-苯基苯并咪唑-2-基)苯（TPBi），活性材料层可采用掺杂小分子发光材料的CH3NH3PbBr3，激子调控层可采用4,4',4''-三(咔唑-9-基)三苯胺（TCTA），空穴传输层可采用N,N'-二苯基-N,N'-(1-萘基)-1,1'-联苯-4,4'-二胺，第二电极层可采用Au。
具体地，首先，将涂布了ITO透明导电层的玻璃基板在商用清洗剂中超声处理，在去离子水中冲洗，在异丙醇溶剂中超声，在洁净环境下烘烤至完全除去水分，然后用紫外光和臭氧清洗，并用低能氧等离子体轰击表面；
随后将ZnO前驱体溶液通过旋涂的方式制备在上述基板上，然后在空气中200℃退火1h，形成电子注入层。
接着，把上述带有电子注入层的玻璃基板置于真空腔内，抽真空至2×10-4Pa以下，在上述电子注入层上真空蒸镀TPBi作为电子传输层，蒸镀速率为0.1nm/s，蒸镀厚度为20nm；
然后将上述基板移至手套箱，预先将一定比例的小分子发光材料溶解于CH3NH3PbBr3溶液中，旋涂掺杂小分子发光材料的CH3NH3PbBr3溶液，然后90℃退火10min，形成活性材料层，然后将基板移至真空腔内蒸镀制备激子调控层TCTA，蒸镀速率为0.05nm/s，厚度为5nm，从而形成光活性层；
最后，在光活性层之上蒸镀NPB作为空穴传输层，蒸镀速率为0.1nm/s，蒸镀膜厚为30nm；在空穴传输层之上蒸镀Au作为第二电极层，蒸镀厚度为100
nm。
另外，在制作OLED器件时，基板可采用玻璃基板，第一电极层可采用ITO，电子注入层可采用ZnO，电子传输层可采用1,3,5-三(N-苯基苯并咪唑-2-基)苯（TPBi），活性材料层可采用掺杂小分子发光材料的CH3NH3PbBr3，激子调控层可采用浴铜灵(BCP），空穴传输层可采用N,N'-二苯基-N,N'-(1-萘基)-1,1'-联苯-4,4'-二胺（NPB），第二电极层可采用Au。
具体地，首先，将涂布了ITO透明导电层的玻璃基板在商用清洗剂中超声处理，在去离子水中冲洗，在异丙醇溶剂中超声，在洁净环境下烘烤至完全除去水分，然后用紫外光和臭氧清洗，并用低能氧等离子体轰击表面；
随后将ZnO前驱体溶液通过旋涂的方式制备在上述基板上，然后在空气中200℃退火1h，形成电子注入层。
接着，把上述带有电子注入层的玻璃基板置于真空腔内，抽真空至2×10-4Pa以下，在上述电子注入层上真空蒸镀TPBi作为电子传输层，蒸镀速率为0.1nm/s，蒸镀厚度为20nm；
然后，蒸镀制备激子调控层BCP，蒸镀速率为0.05nm/s，厚度为5nm；随后将上述基板移至手套箱，预先将一定比例的小分子发光材料溶解于CH3NH3PbBr3溶液中，旋旋涂掺杂小分子发光材料的CH3NH3PbBr3溶液，然后90℃退火10min，形成活性材料层，最终形成光活性层5；
最后，在光活性层5之上蒸镀NPB作为空穴传输层6，蒸镀速率为0.1nm/s，蒸镀膜厚为30nm；在空穴传输层6之上蒸镀Au作为第二电极层7，蒸镀厚度为100
nm。
本发明的OLED器件的制作方法中形成的OLED器件与上述实施例描述的OLED器件一致，具体可参照上述OLED器件的优选实施例的描述，在此不再赘述。
本发明的OLED器件及OLED器件的制作方法，通过在OLED器件中使用激子调控层和活性材料层组成的光活性层，该活性材料层的材料包括：钙钛矿材料及小分子发光材料，从而实现在同一个器件中实现电致发光和光电转换的功能，大大提高了器件的功能集成度，缩短了制程时间，大幅缩减制造成本，并且可以显著提高器件的电致发光性能。
综上，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。
Claims (13)
- 一种OLED器件，其包括：基板、及依次设置在所述基板上的第一电极层、电子注入层、电子传输层、光活性层、空穴传输层以及第二电极层；其中，所述光活性层包括激子调控层以及活性材料层，所述活性材料层包括：钙钛矿材料及小分子发光材料，且所述小分子发光材料的掺杂摩尔比为0.1%-15%；所述钙钛矿材料是化学式为ABX3的材料，其中，A代表有机铵基团；B代表第四主族金属或过渡金属；X代表一元卤族元素或多元卤族元素的组合；所述小分子发光材料为荧光材料或磷光材料。
- 根据权利要求1所述的OLED器件，其中所述激子调控层的材料为电子传输型材料，所述电子传输型材料的能级介于所述电子传输层的材料的能级与所述活性材料层的材料的能级之间，且所述激子调控层位于所述电子传输层与所述活性材料层之间。
- 根据权利要求1所述的OLED器件，其中所述激子调控层的材料为空穴传输型材料，所述空穴传输型材料的能级介于所述空穴传输层的材料的能级与所述活性材料层的材料的能级之间，且所述激子调控层位于所述空穴传输层与所述活性材料层之间。
- 一种OLED器件，其包括：基板、及依次设置在所述基板上的第一电极层、电子注入层、电子传输层、光活性层、空穴传输层以及第二电极层；其中，所述光活性层包括激子调控层以及活性材料层，所述活性材料层包括：钙钛矿材料及小分子发光材料，且所述小分子发光材料的掺杂摩尔比为0.1%-15%。
- 根据权利要求4所述的OLED器件，其中所述激子调控层的材料为电子传输型材料，所述电子传输型材料的能级介于所述电子传输层的材料的能级与所述活性材料层的材料的能级之间，且所述激子调控层位于所述电子传输层与所述活性材料层之间。
- 根据权利要求4所述的OLED器件，其中所述激子调控层的材料为空穴传输型材料，所述空穴传输型材料的能级介于所述空穴传输层的材料的能级与所述活性材料层的材料的能级之间，且所述激子调控层位于所述空穴传输层与所述活性材料层之间。
- 根据权利要求4所述的OLED器件，其中所述钙钛矿材料是化学式为ABX3的材料，其中，A代表有机铵基团；B代表第四主族金属或过渡金属；X代表一元卤族元素或多元卤族元素的组合。
- 根据权利要求4所述的OLED器件，其中所述小分子发光材料为荧光材料或磷光材料。
- 一种OLED器件的制作方法，其包括：在基板上依次形成第一电极层、电子注入层、电子传输层、光活性层、空穴传输层以及第二电极层；其中，所述光活性层包括激子调控层以及活性材料层，所述活性材料层包括：钙钛矿材料及小分子发光材料，且所述小分子发光材料的掺杂摩尔比为0.1%-15%。
- 根据权利要求9所述的OLED器件的制作方法，其中当所述激子调控层的材料为电子传输型材料时，所述电子传输型材料的能级介于所述电子传输层的材料的能级与所述活性材料层的材料的能级之间，形成所述光活性层的步骤，包括：在所述电子传输层上形成所述激子调控层；在所述激子调控层上形成所述活性材料层。
- 根据权利要求9所述的OLED器件的制作方法，其中当所述激子调控层的材料为空穴传输型材料时，所述空穴传输型材料的能级介于所述空穴传输层的材料的能级与所述活性材料层的材料的能级之间，形成所述光活性层的步骤，包括：在所述电子传输层上形成所述活性材料层；在所述活性材料层上形成所述激子调控层。
- 根据权利要求9所述的OLED器件的制作方法，其中所述钙钛矿材料是化学式为ABX3的材料，其中，A代表有机铵基团；B代表第四主族金属或过度金属；X代表一元卤族元素或多元卤族元素的组合。
- 根据权利要求9所述的OLED器件的制作方法，其中所述小分子发光材料为荧光材料或磷光材料。
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