WO2011092879A1 - 弾性表面波フィルタ装置 - Google Patents
弾性表面波フィルタ装置 Download PDFInfo
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- WO2011092879A1 WO2011092879A1 PCT/JP2010/062152 JP2010062152W WO2011092879A1 WO 2011092879 A1 WO2011092879 A1 WO 2011092879A1 JP 2010062152 W JP2010062152 W JP 2010062152W WO 2011092879 A1 WO2011092879 A1 WO 2011092879A1
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- resonator
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- wave filter
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
- H03H9/0557—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement the other elements being buried in the substrate
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
Definitions
- the present invention relates to a surface acoustic wave filter device.
- the present invention relates to a surface acoustic wave filter device including a surface acoustic wave filter chip that is flip-chip mounted on a wiring board.
- Patent Document 1 various surface acoustic wave filter devices using surface acoustic waves have been proposed as band-pass filters mounted on RF (Radio Frequency) circuits in communication devices such as mobile phones. ing.
- RF Radio Frequency
- FIG. 14 is a schematic cross-sectional view of the surface acoustic wave filter device described in Patent Document 1.
- the surface acoustic wave filter device 100 includes a package 101 and a surface acoustic wave filter element 102 disposed in the package 101.
- the package 101 includes a base substrate 101a, a side wall 101b, and a cap member 101c.
- the surface acoustic wave filter element 102 is flip-chip mounted on the base substrate 101a.
- FIG. 15 is a schematic plan view of the surface acoustic wave filter element 102.
- FIG. 16 is a schematic circuit diagram of the surface acoustic wave filter device 100.
- FIG. 17 is a schematic plan view of the base substrate 101a.
- the surface acoustic wave filter element 102 includes a piezoelectric substrate 102a and a ladder-type surface acoustic wave filter portion 102b formed on the piezoelectric substrate 102a.
- the surface acoustic wave filter device 100 connects the serial arm resonators 104 a and 104 b connected in series in the serial arm 103 (see FIG. 16), and the serial arm 103 and the ground potential.
- Inductors L101 to L103 are provided between the parallel arm resonators 105a to 105c and the ground potential.
- the series arm 103 is provided with inductors L104 and L105.
- the series arm resonators 104a and 104b and the parallel arm resonators 105a to 105c are formed on the piezoelectric substrate 102a as shown in FIG.
- the inductors L101 to L105 are formed on the base substrate 101a as shown in FIG.
- the inductors L101 to L105 are configured by wirings 107a to 107e formed on the base substrate 101a. Since the surface acoustic wave filter element 102 is flip-chip mounted on the base substrate 101a, the surface of the base substrate 101a is a die attach surface.
- the inductor may be composed of a chip-type inductor mounted on a base substrate or the like, but is preferably composed of wiring formed on the base substrate from the viewpoint of downsizing the surface acoustic wave filter device.
- the base substrate as the place where the wiring constituting the inductor is formed, the inside of the base substrate and the die attach surface of the base substrate can be considered.
- the wiring configuring the inductor is formed inside the base substrate, the distance between the wiring configuring the inductor and the ground potential is shortened. For this reason, it becomes difficult to form an inductor having a large inductance value. Therefore, it is preferable that the wiring constituting the inductor is formed on the die attach surface of the base substrate that is located farthest from the ground potential.
- the wiring that constitutes the inductor is formed on the die attach surface of the base substrate, electromagnetic coupling or capacitive coupling occurs between the wiring that constitutes the inductor and the resonator formed on the piezoelectric substrate. May deteriorate. Therefore, for example, as shown in FIGS. 15 to 17, in the surface acoustic wave filter device 100, the wirings 107a to 107e constituting the inductors L101 to L105 are connected to the series arm resonators 104a and 104b on the piezoelectric substrate 102a. It is formed on the peripheral edge of the surface of the base substrate 101a so as not to face the parallel arm resonators 105a to 105c.
- the surface acoustic wave filter device 100 it is necessary to enlarge the base substrate 101a in order to secure a region for providing the wirings 107a to 107e constituting the inductors L101 to L105, and the surface acoustic wave filter device is increased in size.
- a region for providing wiring constituting the inductor is secured at the peripheral portion of the surface of the base substrate. It was difficult.
- the present invention has been made in view of such points, and an object thereof is to provide a small surface acoustic wave filter device having good filter characteristics.
- the present inventor has found that the filter characteristics deteriorate so much even if a specific inductor provided on the die attach surface of the wiring board faces a specific resonator provided on the piezoelectric substrate. I found it not. Specifically, it has been found that if the resonator is connected to the input pad or the output pad and the inductor connected to the resonator, the filter characteristics do not deteriorate so much even if they face each other. As a result, the present invention has been made.
- the surface acoustic wave filter device includes a wiring board having a die attach surface and a surface acoustic wave filter chip.
- the surface acoustic wave filter chip is flip-chip mounted on the die attach surface of the wiring board.
- the surface acoustic wave filter chip includes a piezoelectric substrate and a ladder-type surface acoustic wave filter portion formed on the piezoelectric substrate.
- the ladder-type surface acoustic wave filter unit includes an input pad and an output pad, a series arm connected between the input pad and the output pad, and a plurality of resonators.
- the plurality of resonators includes at least one first resonator connected to the input pad or the output pad.
- An inductor connected to the first resonator is formed on the die attach surface of the wiring board.
- the inductor is provided so that at least a part thereof faces the first resonator, but does not face a resonator other than the first resonator among the plurality of resonators.
- the wiring board has an input terminal to which the input pad is connected and an output terminal to which the output pad is connected.
- the plurality of resonators include a plurality of series arm resonators and at least one parallel arm resonator.
- the plurality of series arm resonators are connected in series in the series arm.
- At least one parallel arm resonator is connected between the series arm and the ground potential.
- the first resonator is a series arm resonator.
- the inductor is connected between the first resonator and the input terminal or between the first resonator and the output terminal.
- the wiring board has an input terminal to which the input pad is connected and an output terminal to which the output pad is connected.
- the plurality of resonators include a plurality of series arm resonators and at least one parallel arm resonator.
- the plurality of series arm resonators are connected in series in the series arm.
- At least one parallel arm resonator is connected between the series arm and the ground potential.
- the first resonator is a parallel arm resonator.
- the inductor is connected between the first resonator and the input terminal or between the first resonator and the output terminal.
- the wiring board has an input terminal to which the input pad is connected and an output terminal to which the output pad is connected.
- the plurality of resonators include a plurality of series arm resonators and at least one parallel arm resonator.
- the plurality of series arm resonators are connected in series in the series arm.
- At least one parallel arm resonator is connected between the series arm and the ground potential.
- the first resonator is a series arm resonator.
- the inductor is connected in parallel with the first resonator.
- the wiring board has an input terminal to which the input pad is connected and an output terminal to which the output pad is connected.
- the plurality of resonators include a plurality of series arm resonators and at least one parallel arm resonator.
- the plurality of series arm resonators are connected in series in the series arm.
- At least one parallel arm resonator is connected between the series arm and the ground potential.
- the first resonator is a parallel arm resonator.
- the inductor is connected between the first resonator and the ground potential.
- the surface acoustic wave filter device is a duplexer.
- the inductor connected to the at least one first resonator connected to the input pad or the output pad is at least partially opposed to the first resonator, These are provided so as not to face the resonators other than the first resonator. For this reason, the area
- FIG. 1 is a schematic circuit diagram of a duplexer according to an embodiment of the present invention.
- FIG. 2 is a schematic cross-sectional view of a duplexer according to an embodiment of the present invention.
- FIG. 3 is a schematic perspective plan view showing the electrode structure of the transmitting surface acoustic wave filter chip in the duplexer according to the embodiment of the present invention.
- FIG. 4 is a schematic plan view of the die attach surface of the wiring board in the duplexer according to the embodiment of the present invention.
- FIG. 5 is a schematic perspective plan view of a duplexer according to an embodiment of the present invention.
- FIG. 6 is a schematic plan view of a die attach surface of a wiring board in a duplexer according to a comparative example.
- FIG. 1 is a schematic circuit diagram of a duplexer according to an embodiment of the present invention.
- FIG. 2 is a schematic cross-sectional view of a duplexer according to an embodiment of the present invention.
- FIG. 3 is
- FIG. 7 is a schematic perspective plan view of a duplexer according to a comparative example.
- FIG. 8 is a graph showing pass characteristics of a transmission filter in a duplexer according to an embodiment of the present invention, and pass characteristics of a transmission filter in a duplexer according to a comparative example.
- FIG. 9 is a graph showing the isolation characteristics of the duplexer according to one embodiment of the present invention and the isolation characteristics of the duplexer according to the comparative example.
- FIG. 10 is a schematic circuit diagram of the transmission filter in the duplexer according to the first modification.
- FIG. 11 is a schematic circuit diagram of a transmission-side filter in a duplexer according to a second modification.
- FIG. 12 is a schematic circuit diagram of a transmission-side filter in a duplexer according to a third modification.
- FIG. 13 is a schematic circuit diagram of a transmission-side filter in a duplexer according to a fourth modification.
- FIG. 14 is a schematic cross-sectional view of the surface acoustic wave filter device described in Patent Document 1.
- FIG. 15 is a schematic plan view of the surface acoustic wave filter element 102.
- FIG. 16 is a schematic circuit diagram of the surface acoustic wave filter device 100.
- FIG. 17 is a schematic plan view of the base substrate 101a.
- the duplexer 1 shown in FIGS. 1 and 2 as a type of surface acoustic wave filter device as an example.
- the duplexer 1 is merely an example.
- the surface acoustic wave filter device according to the present invention is not limited to the duplexer 1.
- the surface acoustic wave filter device according to the present invention may have, for example, only one filter unit, or may be a duplexer other than a duplexer, such as a triplexer.
- the duplexer 1 of the present embodiment is, for example, an RF (Radio Frequency) circuit that is an RF (Radio Frequency) circuit such as a mobile phone that supports a CDMA (Code Division Multiple Access) system such as UMTS (Universal Mobile Telecommunications System).
- the duplexer 1 is a duplexer corresponding to UMTS-BAND2.
- the transmission frequency band of UMTS-BAND2 is 1850 to 1910 MHz, and the reception frequency band is 1930 to 1990 MHz.
- FIG. 1 is a schematic circuit diagram of the duplexer 1 of the present embodiment.
- FIG. 2 is a schematic cross-sectional view of the duplexer 1 of the present embodiment.
- the duplexer 1 includes a wiring board 10, a transmission-side surface acoustic wave filter chip 14, and a reception-side surface acoustic wave filter chip 15.
- the transmission-side surface acoustic wave filter chip 14 and the reception-side surface acoustic wave filter chip 15 are flip-chip mounted on the die attach surface 10 a of the wiring substrate 10.
- a sealing resin layer 16 is formed on the wiring substrate 10 so as to cover the transmission-side surface acoustic wave filter chip 14 and the reception-side surface acoustic wave filter chip 15. That is, the duplexer 1 of the present embodiment is a CSP type surface acoustic wave filter device.
- the reception-side surface acoustic wave filter chip 15 includes a longitudinally coupled resonator type surface acoustic wave filter unit 15A formed on a piezoelectric substrate (not shown).
- a reception-side filter is configured by the longitudinally coupled resonator-type surface acoustic wave filter unit 15A.
- the longitudinally coupled resonator type surface acoustic wave filter unit 15A is a filter unit having a balance-unbalance conversion function, and the unbalanced signal terminal 15a of the longitudinally coupled resonator type surface acoustic wave filter unit 15A is formed on the wiring board 10.
- the first and second balanced signal terminals 15b and 15c are connected to the first and second receiving-side signal terminals 22a and 22b formed on the wiring board 10, respectively. ing.
- the impedance of the unbalanced signal terminal 15a is 50 ⁇ .
- the impedances of the first and second balanced signal terminals 15b and 15c are 100 ⁇ .
- the reception-side filter is configured by the longitudinally coupled resonator-type surface acoustic wave filter unit 15A, but the reception-side filter may be configured by a ladder-type surface acoustic wave filter unit.
- a matching inductor L1 is connected between the connection point between the antenna terminal 21 and the unbalanced signal terminal 15a and the ground potential.
- the transmitting surface acoustic wave filter chip 14 includes a ladder type surface acoustic wave filter section 14A.
- the ladder-type surface acoustic wave filter unit 14A constitutes a transmission-side filter.
- the ladder-type surface acoustic wave filter unit 14 ⁇ / b> A is connected between an antenna terminal 21 formed on the wiring board 10 and a transmission-side signal terminal 24 formed on the wiring board 10. Yes.
- the ladder-type surface acoustic wave filter unit 14 ⁇ / b> A includes a series arm 33 that connects the antenna terminal 21 and the transmission-side signal terminal 24. In the series arm 33, the series arm resonators S1 to S3 are connected in series.
- the series arm resonator S1 is composed of surface acoustic wave resonators S11 to S13.
- the series arm resonator S2 includes surface acoustic wave resonators S21 to S23.
- the series arm resonator S3 includes surface acoustic wave resonators S31 to S33.
- the series arm resonators S1 to S3 are each composed of a plurality of surface acoustic wave resonators, but each function as one resonator.
- the ladder-type surface acoustic wave filter unit 14A has high power durability. Note that each of the series arm resonators S1 to S3 may be composed of one surface acoustic wave resonator.
- Capacitors C1 to C5 are connected in parallel to the surface acoustic wave resonators S21 to S23 constituting the series arm resonator S2. These capacitors C1 to C5 shift the antiresonance frequency of the series arm resonator S2 to the low frequency side. Therefore, by providing the capacitors C1 to C5, the steepness of the filter characteristics of the transmission side filter is enhanced.
- An LC resonance circuit 34 in which an inductor L3 and a capacitor C6 are connected in parallel is connected between the series arm resonator S3 and the transmission-side signal terminal 24.
- the attenuation pole formed by the LC resonance circuit 34 is located on the high pass band side of the transmission filter. Therefore, by providing the LC resonance circuit 34, the amount of attenuation on the high pass band side of the transmission filter is increased.
- the ladder-type surface acoustic wave filter unit 14A has parallel arms 37 to 39 connected between the series arm 33 and the ground potential.
- the parallel arms 37 to 39 are provided with parallel arm resonators P1 to P3.
- the parallel arm resonator P1 is composed of surface acoustic wave resonators P11 and P12.
- the parallel arm resonator P2 includes surface acoustic wave resonators P21 and P22.
- the parallel arm resonator P3 includes surface acoustic wave resonators P31 and P32.
- the parallel arm resonators P1 to P3 are each composed of a plurality of surface acoustic wave resonators, but each function as one resonator.
- each of the parallel arm resonators P1 to P3 may be composed of one surface acoustic wave resonator.
- An inductor L2 is connected between the parallel arm resonators P1 and P2 and the ground potential. This inductor L2 can increase the attenuation on the low pass band side of the transmission filter.
- FIG. 3 is a schematic perspective plan view showing the electrode structure of the transmission-side surface acoustic wave filter chip 14 in the duplexer 1 of the present embodiment. Specifically, FIG. 3 shows the electrode structure of the transmission-side surface acoustic wave filter chip 14 in a state where the transmission-side surface acoustic wave filter chip 14 is seen through from above the duplexer 1.
- FIG. 4 is a schematic plan view of the die attach surface 10a of the wiring board 10 in the duplexer 1 of the present embodiment.
- FIG. 5 is a schematic perspective plan view of the duplexer 1 of the present embodiment. Specifically, FIG. 5 shows a state seen through from above the duplexer 1.
- the transmission-side surface acoustic wave filter chip 14 includes a piezoelectric substrate 30.
- an output pad 32 connected to the antenna terminal 21, an input pad 31 connected to the transmission side signal terminal 24, series arm resonators S1 to S3, and a parallel arm resonator P1.
- capacitors C1 to C6, ground pads 41 to 43 connected to the ground potential, electrode pads 44, and dummy pads 45 are formed.
- the surface acoustic wave resonators S11 to S13, S21 to S23, S31 to S33 constituting the series arm resonators S1 to S3 and the surface acoustic wave resonators P11, P12 constituting the parallel arm resonators P1 to P3, P21, P22, P31, and P32 are configured by one interdigital transducer and a set of reflectors disposed on both sides of the interdigital transducer.
- the capacitors C1 to C6 are composed of comb-like electrodes. Bumps are formed on the input pad 31, the output pad 32, the ground pads 41 to 43, the electrode pad 44, and the dummy pad 45.
- the circles in FIG. 3 indicate bumps.
- the piezoelectric substrate 30 can be configured by a piezoelectric single crystal substrate such as LiNbO 3 or LiTaO 3 .
- a plurality of electrodes and inductors L2 and L3 made of wiring are formed on the die attach surface 10a of the wiring substrate 10.
- the plurality of electrodes are connected to the electrode patterns of the transmission-side surface acoustic wave filter chip 14 and the reception-side surface acoustic wave filter chip 15 by bumps.
- the inductor L2 is formed so as not to face the transmission-side surface acoustic wave filter chip 14.
- the inductor L3 is formed so that a part of the inductor L3 faces the transmission-side surface acoustic wave filter chip 14.
- the inductor L3 is provided so that a part of the inductor L3 faces the series arm resonator S3 and the parallel arm resonator P3 connected to the input pad 31. Yes.
- the inductors L2 and L3 are formed on the die attach surface 10a of the wiring board 10 that is located farthest from the ground potential. For this reason, for example, compared with the case where the inductors L2 and L3 are formed inside the wiring substrate 10, the inductance values of the inductors L2 and L3 can be increased without increasing the size of the inductors L2 and L3.
- the inductor L3 is formed so as to face the series arm resonator S3 and the parallel arm resonator P3. For this reason, compared with the case where the inductor L3 is disposed so as not to face the transmission-side surface acoustic wave filter chip 14 including the series arm resonator S3 and the parallel arm resonator P3, the wiring substrate 10 is not increased in size. The region where the inductor L3 is formed can be increased. Therefore, the inductance value of the inductor L3 can be increased.
- the inductor L3 faces the series arm resonator S3 and the parallel arm resonator P3 connected to the input pad 31, but other resonators S1, S2, P1, P2 and capacitors C1 to C6. Is not opposite. Accordingly, it is possible to suppress the deterioration of the filter characteristics of the transmission side filter. Hereinafter, this effect will be described in more detail with reference to specific examples.
- FIG. 6 is a schematic plan view of the die attach surface 201a of the wiring board 201 in the duplexer 200 of the comparative example.
- FIG. 7 is a schematic perspective plan view of the duplexer 200 of the comparative example. Specifically, FIG. 7 shows a state seen through from above the duplexer 200 of the comparative example. As shown in FIGS.
- the inductor L3 includes a part of the inductor L3 not only in the series arm resonator S3 and the parallel arm resonator P3 but also in the parallel arm resonator P2. It is formed so as to face each other.
- FIG. 8 shows the transmission characteristics of the transmission filter in the duplexer 1 of the present embodiment and the transmission characteristics of the transmission filter in the duplexer 200 of the comparative example.
- the minimum value of the attenuation amount was about 45.4 dB in the reception frequency band of 1930 to 1990 MHz.
- the minimum value of attenuation is about 49.8 dB in the reception frequency band of 1930 to 1990 MHz, which is the minimum value of attenuation compared to the duplexer 200 of the comparative example. Is about 4.4 dB larger.
- the amount of attenuation on the high pass band side is larger than that of the transmission side filter in the duplexer 200 of the comparative example.
- FIG. 9 shows the isolation characteristics of the duplexer 1 of the present embodiment and the isolation characteristics of the duplexer 200 of the comparative example.
- the isolation characteristic shown in FIG. 9 is an isolation characteristic between the transmission-side signal terminal 24 and the first and second reception-side signal terminals 22a and 22b.
- the minimum attenuation value was about 53 dB in the reception frequency band of 1930 to 1990 MHz.
- the minimum value of attenuation is about 60 dB in the reception frequency band of 1930 to 1990 MHz, and the isolation characteristic is about 7 dB better than that of the duplexer 200 of the comparative example.
- the elastic surface It can be seen that good filter characteristics can be realized without increasing the size of the wave filter device.
- the inductor L3 formed on the die attach surface 201a of the wiring board 201 is parallel arm resonator P2 formed on the piezoelectric substrate 30 of the transmission surface acoustic wave filter chip 14. Therefore, capacitive coupling and electromagnetic coupling occur between the inductor L3 and the parallel arm resonator P2. As a result, a path by capacitive coupling or electromagnetic coupling is formed between the inductor L3 and the parallel arm resonator P2. With this path, a part of the signal flows directly from the input pad 31 to the parallel arm resonator P2 without passing through the series arm resonator S3.
- the attenuation on the high-pass band side of the transmission side filter in the duplexer 200 of the comparative example is reduced, and the isolation characteristics of the duplexer 200 of the comparative example are degraded, and the filter characteristics are degraded.
- the inductor L3 formed on the die attach surface 10a of the wiring substrate 10 is a series arm resonator formed on the piezoelectric substrate 30 of the transmission-side surface acoustic wave filter chip 14. It is formed so as to face S3 and the parallel arm resonator P3 but not to face the other resonators S1, S2, P1, P2 and the capacitors C1 to C6. Therefore, even if capacitive coupling or electromagnetic coupling occurs between the inductor L3 and the series arm resonator S3 and between the inductor L3 and the parallel arm resonator P3, the other resonators S1, S2, P1.
- P2 and capacitors C1 to C6 do not cause capacitive coupling or electromagnetic coupling. Therefore, a path in which a part of the signal flows directly from the input pad 31 to the other resonators S1, S2, P1, P2 and the capacitors C1 to C6 without passing through a desired path is not formed. Therefore, in the duplexer 1 of the present embodiment, the filter characteristics such as the attenuation amount and the isolation characteristic on the high side of the pass band of the transmission filter are unlikely to deteriorate.
- the inductor L3 includes a part of the inductor L3 in series arm resonance. It may be formed so as to face only one of the child S3 and the parallel arm resonator P3.
- FIG. 10 is a schematic circuit diagram of the transmission filter in the duplexer according to the first modification.
- FIG. 11 is a schematic circuit diagram of a transmission-side filter in a duplexer according to a second modification.
- FIG. 12 is a schematic circuit diagram of a transmission-side filter in a duplexer according to a third modification.
- FIG. 13 is a schematic circuit diagram of a transmission-side filter in a duplexer according to a fourth modification.
- the inductor formed on the die attach surface of the wiring board facing the resonator formed on the piezoelectric substrate is an inductor constituting the LC resonance circuit.
- An inductor such as
- the impedance matching inductor L4 connected to the series arm resonator S3 and the parallel arm resonator P3 and also connected to the transmission side signal terminal 24 which is the input terminal of the transmission side filter is provided.
- the inductor L4 may be disposed on the die attach surface 10a of the wiring board 10 so that at least a part of the inductor L4 faces one or both of the series arm resonator S3 and the parallel arm resonator P3.
- the inductor L5 connected in parallel with the series arm resonator S3 is arranged such that at least a part of the inductor L5 faces one or both of the series arm resonator S3 and the parallel arm resonator P3.
- the wiring board 10 may be disposed on the die attach surface 10a.
- an inductor L6 connected between the parallel arm resonator P3 and the ground potential has at least a part of the inductor L6, one of the series arm resonator S3 and the parallel arm resonator P3. Or you may arrange
- an inductor L7 connected between the connection point of the parallel arm resonator P3 and the parallel arm resonator P2 and the ground potential is replaced by at least a part of the inductor L7.
- the inductor is connected to the resonator formed on the piezoelectric substrate and connected to the input pad, and at least a part of the inductor is connected to the resonator.
- this invention is not limited to such a structure.
- An inductor is connected to a resonator formed on a piezoelectric substrate and connected to an output pad, and at least a part of the inductor is formed on the die attach surface of the wiring substrate so as to face the resonator. Even so, good filter characteristics can be realized without increasing the size of the surface acoustic wave filter device.
- the transmission filter of the duplexer is configured by a ladder-type surface acoustic wave filter
- the ladder-type surface acoustic wave filter may constitute a duplexer reception-side filter.
- a duplexer is given as an example of the surface acoustic wave filter device embodying the present invention.
- the surface acoustic wave filter device according to the present invention includes: Instead of the duplexer, an interstage filter mounted on the RF circuit may be used.
- sealing resin layer 21 ... antenna terminal 22a ... first receiving side signal terminal 22b ... first 2 reception side signal terminals 24 ... transmission side signal terminals 30 ... piezoelectric substrate 31 ... input pad 32 ... output pad 33 ... series arm 34 ... LC resonance circuit 7-39 ... parallel arms 41-43 ... grounding pad 44 ... electrode pad 45 ... dummy pads
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Abstract
Description
1…デュプレクサ
S1~S3…直列腕共振子
P1~P3…並列腕共振子
S11~S13、S21~S23、S31~S33、P11,P12、P21,P22、P31,P32…弾性表面波共振子
C1~C6…キャパシタ
10…配線基板
10a…ダイアタッチ面
14…送信側弾性表面波フィルタチップ
14A…ラダー型弾性表面波フィルタ部
15…受信側弾性表面波フィルタチップ
15A…縦結合共振子型弾性表面波フィルタ部
15a…不平衡信号端子
15b…第1の平衡信号端子
15c…第2の平衡信号端子
16…封止樹脂層
21…アンテナ端子
22a…第1の受信側信号端子
22b…第2の受信側信号端子
24…送信側信号端子
30…圧電基板
31…入力パッド
32…出力パッド
33…直列腕
34…LC共振回路
37~39…並列腕
41~43…接地用パッド
44…電極パッド
45…ダミーパッド
Claims (6)
- ダイアタッチ面を有する配線基板と、
前記配線基板の前記ダイアタッチ面にフリップチップ実装されている弾性表面波フィルタチップとを備える弾性表面波フィルタ装置であって、
前記弾性表面波フィルタチップは、圧電基板と、前記圧電基板上に形成されているラダー型弾性表面波フィルタ部とを有し、
前記ラダー型弾性表面波フィルタ部は、入力パッド及び出力パッドと、前記入力パッドと前記出力パッドとを接続している直列腕と、前記入力パッドまたは前記出力パッドに接続されている少なくともひとつの第1の共振子を含む複数の共振子とを備え、
前記配線基板の前記ダイアタッチ面には、前記第1の共振子に接続されているインダクタが形成されており、
前記インダクタは、少なくとも一部が前記第1の共振子と対向する一方、前記複数の共振子のうち、前記第1の共振子以外の共振子とは対向しないように設けられている、弾性表面波フィルタ装置。 - 前記配線基板は、前記入力パッドが接続されている入力端子と、前記出力パッドが接続されている出力端子とを有し、
前記複数の共振子は、前記直列腕において直列に接続されている複数の直列腕共振子と、前記直列腕とグラウンド電位との間に接続されている少なくともひとつの並列腕共振子とを含み、
前記第1の共振子は前記直列腕共振子であり、
前記インダクタは、前記第1の共振子と前記入力端子との間または前記第1の共振子と前記出力端子との間に接続されている、請求項1に記載の弾性表面波フィルタ装置。 - 前記配線基板は、前記入力パッドが接続されている入力端子と、前記出力パッドが接続されている出力端子とを有し、
前記複数の共振子は、前記直列腕において直列に接続されている複数の直列腕共振子と、前記直列腕とグラウンド電位との間に接続されている少なくともひとつの並列腕共振子とを含み、
前記第1の共振子は前記並列腕共振子であり、
前記インダクタは、前記第1の共振子と前記入力端子との間または前記第1の共振子と前記出力端子との間に接続されている、請求項1に記載の弾性表面波フィルタ装置。 - 前記配線基板は、前記入力パッドが接続されている入力端子と、前記出力パッドが接続されている出力端子とを有し、
前記複数の共振子は、前記直列腕において直列に接続されている複数の直列腕共振子と、前記直列腕とグラウンド電位との間に接続されている少なくともひとつの並列腕共振子とを含み、
前記第1の共振子は前記直列腕共振子であり、
前記インダクタは、前記第1の共振子と並列に接続されている、請求項1に記載の弾性表面波フィルタ装置。 - 前記配線基板は、前記入力パッドが接続されている入力端子と、前記出力パッドが接続されている出力端子とを有し、
前記複数の共振子は、前記直列腕において直列に接続されている複数の直列腕共振子と、前記直列腕とグラウンド電位との間に接続されている少なくともひとつの並列腕共振子とを含み、
前記第1の共振子は並列腕共振子であり、
前記インダクタは、前記第1の共振子とグラウンド電位との間に接続されている、請求項1に記載の弾性表面波フィルタ装置。 - 分波器である、請求項1~5のいずれか一項に記載の弾性表面波フィルタ装置。
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EP10844637.8A EP2530837A4 (en) | 2010-01-28 | 2010-07-20 | SURFACE ACOUSTIC WAVE FILTER DEVICE |
CN201080062605.3A CN102725958B (zh) | 2010-01-28 | 2010-07-20 | 弹性表面波滤波装置 |
JP2011551662A JP5354028B2 (ja) | 2010-01-28 | 2010-07-20 | 弾性表面波フィルタ装置 |
KR1020127018859A KR101387447B1 (ko) | 2010-01-28 | 2010-07-20 | 탄성표면파 필터장치 |
US13/558,402 US8436697B2 (en) | 2010-01-28 | 2012-07-26 | Surface acoustic wave filter device |
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US13/558,402 Continuation US8436697B2 (en) | 2010-01-28 | 2012-07-26 | Surface acoustic wave filter device |
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US20120286896A1 (en) | 2012-11-15 |
EP2530837A1 (en) | 2012-12-05 |
JPWO2011092879A1 (ja) | 2013-05-30 |
EP2530837A4 (en) | 2014-02-26 |
US8436697B2 (en) | 2013-05-07 |
JP5354028B2 (ja) | 2013-11-27 |
CN102725958B (zh) | 2015-03-11 |
CN102725958A (zh) | 2012-10-10 |
KR20120094522A (ko) | 2012-08-24 |
KR101387447B1 (ko) | 2014-04-21 |
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