Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
  • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
  • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
  • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
  • B24D3/28—Resins or natural or synthetic macromolecular compounds
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
  • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
  • B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
  • B24D3/342—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties incorporated in the bonding agent
  • B24D3/344—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties incorporated in the bonding agent the bonding agent being organic
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
  • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

• the polishing pad further comprises a support layer interposed between the compliant layer and the porous polishing layer.
• phrases "at least one of and “comprises at least one of followed by a list refers to any one of the items in the list and any combination of two or more items in the list.
• FIGS. 1A and IB are micrographs of a cross-section and top view, respectively, of a porous polishing pad in the prior art
• thermoplastic polymer refers to a polymeric material that is essentially not crosslinked and essentially does not form a three-dimensional network.
• thermoset refers to a polymer that is at least substantially crosslinked wherein said polymer has essentially a three-dimensional network.
• the polymer particles can be chosen such that there is minimal sintering of the particles upon heating (i.e., there is minimal plastic flow at the boundary of the polymer particles, and little to no coalescence between the particles of the polymer particles in the polishing pad of the present disclosure).
• the polishing pad can be prepared below the melting or sintering point of the particulate thermoplastic polymer.
• the polymer particles comprise thermoset polymers.
• the polymer particles can have an average particle size of at least 5 (in some embodiments, at least 7, 10, 15, 20, 25, 30, 40, or 50) microns. In some embodiments, the polymer particles can have an average particle size of up to 500 (in some embodiments, up to 400, 300, 200, or 100) microns.
• the particle size generally refers to the diameter of the particle; however, in embodiments when the particles are not spherical (e.g., fibers), the particle size can refer to the largest dimension of the particle.
• the average particle size of the polymer particles can be determined by conventional methods.
• suitable polyols useful for preparing isocyanate functional polyurethane prepolymers include higher polyalkylene glycols, such as polyethylene glycols having a number average molecular weight (Mn) of from 200 to 2000 grams per mole; hydroxyl-bearing acrylics, such as those formed from the copolymerization of (meth)acrylates and hydroxy functional (meth)acrylates, such as methyl methacrylate and hydroxyethyl methacrylate copolymers; and hydroxy functional polyesters, such as those formed from the reaction of diols, such as butane diol, and diacids or diesters, such as adipic acid or diethyl adipate.
• the polyol useful for practicing the present disclosure can have a number average molecular weight (Mn) of from 200 to 2000 grams per mole.
• suitable epoxide functional materials useful for practicing the present disclosure include epoxide functional monomers, epoxide functional prepolymers and combinations thereof.
• exemplary suitable epoxide functional monomers can include aliphatic polyepoxides, such as 1,2,3,4-diepoxybutane, 1,2,7,8-diepoxyoctane; cycloaliphatic polyepoxides, such as 1,2,4,5-diepoxycyclohexane, 1,2,5,6- diepoxycyclooctane, 7-oxa-bicyclo[4.1.0]heptane-3-carboxylic acid 7-oxa- bicyclo[4.1.0]hept-3-ylmethyl ester, l,2-epoxy-4-oxiranyl-cyclohexane and 2,3- (epoxypropyl)cyclohexane; aromatic polyepoxides, such as bis(4-hydroxyphenyl)methane diglycidyl
• the second resin having at least two groups reactive with epoxides can comprise at least one of hydroxyl, mercapto, carboxylic acid, primary amine, or secondary amine.
• the second resin can include polyols recited previously herein.
• the second resin can include polyamines recited previously herein.
• suitable polyamines can include polyamide prepolymers having at least two amine groups selected from primary amines, secondary amines and combinations thereof.
• Suitable exemplary polyamide prepolymers can include those available, for example, from Cognis Corporation, Coating & Inks Division, Monheim, Germany, under the trade designation "VERSAMID".
• the molar equivalents ratio of epoxide groups to epoxide-reactive groups of the reactants used to prepare the particulate crosslinked polyepoxide is typically from 0.5: 1.0 to 2.0: 1.0, e.g., from 0.7:1.0 to 1.3: 1.0 or from 0.8: 1.0 to 1.2: 1.0.
• Exemplary suitable catalysts for ring-opening of epoxides include any of those described above (e.g., tertiary amines such as tri-tert-butyl amine) and tetrafluoroboric acid).
• the catalyst can be added to the second resin before mixing the first and second resins.
• the epoxide ring opening catalyst can be present in an amount of less than 5 percent by weight, or less than 3 percent or 1 percent by weight, based on the total weight of the first and second resins.
• each of the polishing elements 4 generally have a plurality of pores 15 distributed substantially throughout the entire polishing element 4.
• polishing element extends along the first direction at least about 0.25 mm above a plane including the support layer (10 in FIG. 3).
• the height of the polishing surface (14 in FIG. 3, 23 in FIG. 4) above the base or bottom of the polishing element (2 in FIG. 3, 2' in FIG. 4) may be 0.25 mm, 0.5 mm, 1.5 mm, 2.0 mm, 2.5 mm, 3.0 mm, 5.0 mm, 10 mm or more, depending on the polishing composition used and the material selected for the polishing elements.
• Surfactants are useful in the compositions and porous polishing layers disclosed herein, for example, for typically reducing the pore size and the pore size range and enhancing the pore distribution even more than with the dual cure method in the absence of surfactant.
• the addition of a surfactant can help provide better control on the pore size distribution and the size, density, and shape of the pores, which in turn can have a positive impact on key metrics of uniform performance (e.g., removal rate and within wafer uniformity).
• the present disclosure provides the method according to any one of the twenty-third to thirty-seventh embodiments, wherein the pores have an average pore size in a range from 5 microns to 100 microns.
• the present disclosure provides the method according to the thirty-ninth embodiment, wherein the separate polishing elements each have an affixed end and an end distal from the support layer, and wherein the distal end is movable in an axis normal to a polishing surface of the polishing elements.
• the present disclosure provides the method according to any one of the twenty-third to thirty-eighth embodiments, wherein the polishing layer comprises separate polishing elements protruding from the compliant layer, wherein polishing elements each have an end distal from the support layer, and wherein the distal end is movable in an axis normal to a polishing surface of the polishing elements.
• Step 5 8 inch diameter pad obtained from Buehler Ltd. under the trade designation "TEXMET 1500 Polishing Pad", 40-8618, the polishing time was 6 min with 3 um grade polycrystalline diamond suspension 90-30020, available from Allied High Tech Products, Inc., as the polishing fluid.

Landscapes

• Engineering & Computer Science (AREA)
• Mechanical Engineering (AREA)
• Microelectronics & Electronic Packaging (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Physics & Mathematics (AREA)
• Power Engineering (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Mechanical Treatment Of Semiconductor (AREA)
• Compositions Of Macromolecular Compounds (AREA)
• Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
• Polishing Bodies And Polishing Tools (AREA)
• Polyurethanes Or Polyureas (AREA)

Priority Applications (5)

Applications Claiming Priority (4)

Publications (2)

Family

ID=44247814

Family Applications (1)

Country Status (6)

Cited By (5)

Families Citing this family (58)

Family Cites Families (11)

• 2010
  • 2010-12-20 KR KR1020127019080A patent/KR101855073B1/ko not_active Expired - Fee Related
  • 2010-12-20 WO PCT/US2010/061199 patent/WO2011087737A2/en not_active Ceased
  • 2010-12-20 US US13/518,475 patent/US20130012108A1/en not_active Abandoned
  • 2010-12-20 JP JP2012546101A patent/JP5728026B2/ja active Active
  • 2010-12-20 SG SG2012046546A patent/SG181890A1/en unknown
  • 2010-12-21 TW TW099145034A patent/TWI517975B/zh not_active IP Right Cessation

Also Published As

Similar Documents

Legal Events