WO2011079474A1 - 基于紫光led的白光发光装置 - Google Patents

基于紫光led的白光发光装置 Download PDF

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Publication number
WO2011079474A1
WO2011079474A1 PCT/CN2009/076373 CN2009076373W WO2011079474A1 WO 2011079474 A1 WO2011079474 A1 WO 2011079474A1 CN 2009076373 W CN2009076373 W CN 2009076373W WO 2011079474 A1 WO2011079474 A1 WO 2011079474A1
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Prior art keywords
phosphor
device based
emitting device
violet led
light
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PCT/CN2009/076373
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English (en)
French (fr)
Inventor
周明杰
马文波
乔延波
时朝璞
李清涛
Original Assignee
海洋王照明科技股份有限公司
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Application filed by 海洋王照明科技股份有限公司 filed Critical 海洋王照明科技股份有限公司
Priority to US13/514,959 priority Critical patent/US20130001444A1/en
Priority to PCT/CN2009/076373 priority patent/WO2011079474A1/zh
Priority to CN200980161531.6A priority patent/CN102687266B/zh
Priority to EP09852759.1A priority patent/EP2521169B1/en
Priority to JP2012546305A priority patent/JP2013516075A/ja
Publication of WO2011079474A1 publication Critical patent/WO2011079474A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
    • C03C14/006—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77342—Silicates
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V3/00—Globes; Bowls; Cover glasses
    • F21V3/04—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings
    • F21V3/10—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by coatings
    • F21V3/12—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by coatings the coatings comprising photoluminescent substances
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/06—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters for filtering out ultraviolet radiation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
    • F21V9/38—Combination of two or more photoluminescent elements of different materials
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2214/00—Nature of the non-vitreous component
    • C03C2214/16—Microcrystallites, e.g. of optically or electrically active material
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V3/00—Globes; Bowls; Cover glasses
    • F21V3/04—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings
    • F21V3/06—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by the material
    • F21V3/061—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by the material the material being glass
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Definitions

  • the invention belongs to the technical field of illumination, and relates to a light-emitting device, in particular to a white light-emitting device based on a violet LED. Background technique
  • Luminescent glass is a new type of luminescent material developed in recent years. Among them, the high siloxane luminescent glass series luminescent materials can be excited by violet light efficiently, and the luminescence spectrum covers the visible light region.
  • the high siloxane luminescent glass series luminescent material is prepared by using porous glass having a SiO 2 content of more than 95 wt% (weight percent) as a matrix glass, and immersing the porous glass in a solution containing active ions (such as Eu, Ce, Tb, Cu) by solution impregnation.
  • active ions such as Eu, Ce, Tb, Cu
  • the technical problem to be solved by the present invention is to realize white light emission in combination with a combination of a violet LED chip and a three-primary phosphor in the prior art, but the defect of low light excitation conversion efficiency of the three primary color phosphors used provides a light conversion efficiency.
  • the technical solution adopted by the present invention to solve the technical problem thereof is: a white light based on a violet LED
  • the illuminating device comprises a casing, wherein the casing is provided with a supporting plate, and at least one purple LED semiconductor light source having an emission wavelength in the range of 210 nm to 410 nm is disposed on the supporting plate, and z is disposed in the casing opposite to the violet LED semiconductor light source.
  • One of the formed phosphor layers is: a white light based on a violet LED
  • the illuminating device comprises a casing, wherein the casing is provided with a supporting plate, and at least one purple LED semiconductor light source having an emission wavelength in the range of 210 nm to 410 n
  • the high-oxygen luminescent glass plate doped with Eu ions is prepared as follows: a high-silicon porous glass having a pore size of several nanometers to several tens of nanometers and a volume of micropores of 25 to 40% of the total volume of the glass is selected.
  • the high-silicon porous glass is immersed in a solution having a concentration of Eu ions of 0.005 to 0.1 M.
  • the solvent may be water, ethanol, etc., and the immersed glass is taken out and dried, and then sintered at a temperature of 1050 ° C to 1200 ° C to form a dense one.
  • High silica light emitting glass plate doped with Eu ions is prepared as follows: a high-silicon porous glass having a pore size of several nanometers to several tens of nanometers and a volume of micropores of 25 to 40% of the total volume of the glass is selected.
  • the high-silicon porous glass is immersed in a solution having a concentration of Eu
  • the Eu-doped high-oxygen luminescent glass plate has a thickness of 0.1 mm to 50 mm.
  • the Eu-doped high-oxygen luminescent glass plate is a luminescent glass plate that absorbs light having a wavelength of 210 nm to 410 nm and emits blue light having a wavelength of 430 to 460 nm.
  • the yellow phosphor is a material capable of absorbing blue light emitted from a high-oxygen luminescent glass plate doped with Eu ions and emitting yellow color light, and has a maximum emission peak position of 530 nm to 590 nm.
  • the yellow fluorescent powder is preferably one or both of a silicate phosphor having a broad band excitation or a rare earth garnet system phosphor having Ce as an activator.
  • YAG Ce system phosphor (such as Dalian Luming Luminescence Technology Co., Ltd. product number LMY-60-C material), silicate system phosphor (such as Dalian Luming Luminescence Technology Co., Ltd. commodity number LMS-550 Material), nitride system phosphor (such as Beijing Zhongcun Yuji Technology Co., Ltd. product number ZYP560);
  • the green phosphor is a material capable of absorbing light emitted by a high-oxygen luminescent glass plate doped with Eu ions and emitting green color.
  • the maximum emission peak position of the green phosphor is 490 nm to 525 nm, and the green phosphor Preference is given to chlorosilicate phosphors or Ca 3 Sc 2 Si 3 0 12 : Ce green luminescent materials.
  • a chlorosilicate phosphor satisfying Ca 8 + y Eu x Mn y Mg (Si0 4 ) 4 C1 2 , a Ca 3 Sc 2 Si 3 0 12 : Ce phosphor, or the like.
  • the red phosphor is a material capable of absorbing red light emitted from a high-oxygen luminescent glass plate doped with Eu ions and emitting red color light, and the red phosphor is a vulcanization having a maximum emission peak position of 595 nm to 680 nm.
  • the sulfide phosphors are selected such as CaS:Eu, SrS:Eu, etc., and the nitride phosphors are selected as the luminescent materials of Beijing Zhongcun Yuji Technology Co., Ltd., product number ZYP630.
  • the weight ratio of the yellow phosphor to the red phosphor is 1:0.1-1:1.
  • the weight ratio of the green phosphor to the red phosphor is 1:0.1 to 1:1.
  • the invention adopts at least one violet LED semiconductor light source with an emission wavelength in the range of 210 nm to 410 nm on the support plate, and the violet LED semiconductor light source emits ultraviolet light and is irradiated on the high silicon oxide light-emitting glass plate doped with Eu ions, doped.
  • the high-oxygen luminescent glass of Eu ion efficiently converts the ultraviolet light in the range of 210 nm to 410 nm emitted by the violet LED into a strong blue light with an illuminating peak of about 450 nm, by adjusting the doping concentration of Eu in the high-oxygen luminescent glass and the glass.
  • the thickness is used to control the absorption of ultraviolet light and the intensity of blue light, and then the blue light re-energizes a mixture of a yellow phosphor and a red phosphor suitable for 450 nm excitation, a green phosphor and a red phosphor, which are disposed on a high siloxane glass plate.
  • One kind of luminescence in the mixture and the yellow phosphor, and the light emitted by the blue light and the phosphor combine to form white light of different color temperature and different color rendering index, thereby realizing white light with high color rendering coefficient.
  • Figure 3 is a graph of excitation and emission spectra of yellow phosphor LMS-550. detailed description
  • the preparation method of Eu-doped high-oxygen luminescent glass is as follows:
  • the Eu ion-containing raw material is made into an aqueous solution containing Eu ions, a nitric acid solution, a sulfuric acid solution, an ethanol solution or an acetone solution, and a high silica porous glass having a SiO 2 content of more than 95% by weight is immersed in the solution, wherein Eu The concentration of ions is 0.005 ⁇ 0.1M.
  • high-silicon porous glass can be immersed in different concentrations of Eu ion solution to make high-oxygen oxygen with different Eu ion content.
  • Light-emitting glass to control the absorption of ultraviolet light and the intensity of blue light.
  • FIG. 1 shows the excitation and emission spectra of high-oxygen luminescent glass doped with Eu ions. It can be seen from the figure that the glass strongly absorbs light from 240 nm to 410 m and achieves strong blue light emission around 450 nm.
  • the yellow, green, and red phosphors suitable for excitation at 450 nm used in the examples of the present invention can be directly used by commercially available commercials.
  • Embodiment 1 as shown in FIG. 2, a white light emitting device based on a violet LED, comprising a casing 3, a support plate 2 is disposed in the casing 3, and at least one emission wavelength is set in the range of 210 nm to 410 nm on the support plate 2.
  • the purple LED semiconductor light source 1 is provided with four violet LED semiconductor light sources 1 in the present embodiment, and the shell 1 is also provided with high-oxygen oxyluminescence doped with Eu ions opposite to the violet LED semiconductor light source 1.
  • the glass plate 4, the violet LED semiconductor light source 1 and the Eu-doped high-oxygen luminescent glass plate 4 are spaced apart, and the high-oxygen luminescent glass plate facing away from the violet LED semiconductor light source is provided with a yellow phosphor and a red fluorescent light.
  • the phosphor layer 5 is formed by dispersing the above-mentioned phosphor in a transparent epoxy resin or directly coating the surface of the high siloxane glass plate 4 by spin coating or spraying.
  • Embodiment 2 a white light emitting device based on a violet LED, wherein the yellow phosphor in the phosphor layer 5 is a silicate phosphor having a broad band excitation.
  • Dalian Luming Luminescence Technology Co., Ltd. is used.
  • a series of rare earth-activated silicate phosphors (product number LMS-550), the structure of the apparatus of the present embodiment, the selection of the violet LED, and the coating method of the phosphor are the same as those in the first embodiment, and are not described herein again.
  • the excitation and emission spectra of the yellow phosphor LMS-550 are shown in Fig. 3. From the excitation spectrum, it can be seen that the LMS-550 phosphor can efficiently absorb blue-violet light from about 300 nm to 460 nm and emit yellow light of about 550 nm. In the present device, most of the 365 nm violet light emitted by the violet LED is absorbed by the Eu-doped high-oxygen luminescent glass plate 4, and emits 442 nm of blue light, and the Eu-doped high-oxygen luminescent glass plate 4 emits blue light. Further, the LMS-550 phosphor coated on the outside of the high siloxane glass plate 4 is partially absorbed to emit yellow light, and the remaining blue light and the emitted yellow light are combined to form white light.
  • Embodiment 3 a white light emitting device based on a violet LED, wherein the yellow phosphor selected from the phosphor layer 5 is a rare earth garnet phosphor of Ce as an activator, and the embodiment selects Dalian Luming Lighting Technology Co., Ltd. , Phosphor of product number LMY-60-C.
  • the structure of the device, the selection of the violet LED, and the coating method of the phosphor are the same as those in the first embodiment, and are not described herein again.
  • Embodiment 4 a white light emitting device based on a violet LED, wherein a mixture of a yellow phosphor and a red phosphor in the phosphor layer 5 increases the color rendering property of the white light emitting device, the yellow phosphor and the red phosphor
  • the weight ratio is 1: 0.4, of which the yellow phosphor is selected from Dalian Luming Lighting Technology Co., Ltd. LMS series rare earth activated silicate phosphor (commodity number LMS-550), red phosphor used Beijing Zhongcun Yuji Technology Co., Ltd. ZYP650H red phosphor.
  • the structure of the device, the selection of the violet LED, and the coating method of the phosphor are the same as those in the first embodiment, and are not described herein again.
  • Embodiment 5 a white light emitting device based on a violet LED, wherein a mixture of a green phosphor and a red phosphor in the phosphor layer 5 increases the color rendering property of the white light emitting device, the green phosphor and the red phosphor
  • the weight ratio is 1: 0.6 green phosphor is selected from Dalian Luming Luminescence Technology Co., Ltd. LMS series rare earth activated silicate phosphor (commodity number LMS-520), red phosphor is selected from Beijing Zhongcun Yuji Technology Co., Ltd. ZYP650H red fluorescence powder.
  • the structure of the device, the selection of the violet LED, and the coating method of the phosphor are the same as those in the first embodiment, and are not described herein again.
  • Embodiment 6 a white light emitting device based on a violet LED, wherein a mixture of a green phosphor and a red phosphor in the phosphor layer 5 increases the color rendering property of the white light emitting device, the green phosphor and the red phosphor
  • the weight ratio is 1:0.5
  • the green phosphor is Ca 8 _ x _ y Eu x Mn y M g (Si0 4 ) 4 Cl 2
  • the red phosphor is selected from Beijing Zhongcun Yuji Technology Co., Ltd. ZYP650H red phosphor, device
  • the structure, the selection of the violet LED, and the coating method of the phosphor are the same as those in the first embodiment, and are not described herein again.
  • Embodiment 7 a white light emitting device based on a violet LED, wherein a mixture of a green phosphor and a red phosphor in the phosphor layer 5 increases the color rendering property of the white light emitting device, the green phosphor and the red phosphor
  • the weight ratio is 1:0.2
  • the green phosphor is Ca 3 Sc 2 Si 3 0 12: Ce
  • the red phosphor is CaS : Eu
  • the structure of the device the choice of violet LED and the coating method of the phosphor are the same as in the first embodiment. I will not repeat them here.
  • Embodiment 8 is a white light emitting device based on a violet LED, wherein a mixture of a green phosphor and a red phosphor in the phosphor layer 5 increases the color rendering property of the white light emitting device, the green phosphor and the red phosphor.
  • the weight ratio is 1: 0.1
  • the green phosphor is Ca 3 Sc 2 Si 3 0 12: Ce
  • the red phosphor is SrS: Eu.
  • the structure of the device, the choice of violet LED and the coating method of the phosphor are the same. Example 1, no further description here.
  • Embodiment 9 a white light emitting device based on a violet LED, wherein a mixture of a green phosphor and a red phosphor in the phosphor layer 5 increases the color rendering property of the white light emitting device, the green phosphor and the red phosphor
  • the weight ratio is 1:1, the green phosphor is Ca 3 Sc 2 Si 3 0 12 : Ce, the red phosphor is CaS : Eu, the structure of the device, the choice of violet LED and the coating method of the phosphor are the same as in the first embodiment. I will not repeat them here.
  • Embodiment 10 a white light emitting device based on a violet LED, wherein a mixture of a yellow phosphor and a red phosphor in the phosphor layer 5 increases the color rendering property of the white light emitting device, the yellow phosphor and the red phosphor
  • the weight ratio is 1: 0.1, among which the yellow phosphor is selected from Dalian Luming Luminescence Technology Co., Ltd. LMS series rare earth activated silicate phosphor (product number LMS-560), and the red phosphor is selected from Beijing Zhongcun Yuji Technology Co., Ltd. ZYP630H Red phosphor.
  • the structure of the device, the selection of the violet LED, and the coating method of the phosphor are the same as those in the first embodiment, and are not described herein again.
  • Embodiment 11 a white light emitting device based on a violet LED, wherein a mixture of a yellow phosphor and a red phosphor in the phosphor layer 5 increases the color rendering property of the white light emitting device, the yellow phosphor and the red phosphor
  • the weight ratio is 1:1, among which the yellow phosphor is selected from Dalian Luming Luminescence Technology Co., Ltd. LMS series rare earth activated silicate phosphor (product number LMS-555), and the red phosphor is selected from Beijing Zhongcun Yuji Technology Co., Ltd. ZYP650 Red phosphor.
  • the structure of the device, the selection of the violet LED, and the coating method of the phosphor are the same as those in the first embodiment, and will not be described herein.

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Description

基于紫光 LED的白光发光装置 技术领域
本发明属于照明技术领域， 涉及一种发光装置， 尤其涉及一种基于紫光 LED的白光发光装置。 背景技术
发光玻璃是近年来发展起来的新型发光材料， 其中高硅氧发光玻璃系列 发光材料可以被紫光高效激发，发光光谱覆盖可见光区域。高硅氧发光玻璃系 列发光材料的制备方法是采用 Si02含量超过 95wt% (重量百分比）的多孔玻璃 为基质玻璃， 通过溶液浸渍法将多孔玻璃浸入含活性离子 （如 Eu、 Ce、 Tb、 Cu、 Zn、 Sn等） 的水溶液、 酸溶液或有机溶液中， 再经高温 （105CTC以上） 在空气或还原气氛中烧结而成。
目前，紫光 LED芯片与三基色荧光粉组合实现白光发光成为白光 LED的 一个发展趋势， 与用蓝光 LED (460nm) 禾 P YAG: Ce黄色荧光粉结合产生白 光的方式相比， 它具有显色性高的特点。 但是， 适合紫外光 LED所用三基色 荧光粉的光激发转换效率并不高， 须进一步提高。 发明内容
本发明要解决的技术问题在于， 针对现有技术中紫光 LED芯片与三基色 荧光粉组合实现白光发光，但所用的三基色荧光粉的光激发转换效率较低的缺 陷， 提供一种光转换效率高、 显色系数高的基于紫光 LED的白光发光装置。
本发明解决其技术问题所采用的技术方案是： 一种基于紫光 LED的白光 发光装置， 包括外壳， 外壳内设有支撑板， 在支撑板上设有至少一个发射波长 在 210nm~410nm范围内的紫光 LED半导体光源， z在外壳内还设置有与紫光 LED半导体光源相对的掺杂 Eu离子的高硅氧发光玻璃板， 背向紫光 LED半 导体光源的高硅氧发光玻璃板一面设有黄色荧光粉与红色荧光粉的混合物、绿 色荧光粉与红色荧光粉的混合物、 黄色荧光粉中的一种形成的荧光粉层。
所述掺杂 Eu离子的高硅氧发光玻璃板， 其制备方法如下： 选用孔径大小 为几纳米到几十纳米、微孔的体积占玻璃总体积的 25~40%的高硅氧多孔玻璃， 将高硅氧多孔玻璃浸泡在 Eu离子的浓度为 0.005〜0.1M的溶液中， 溶剂可以 为水、 乙醇等， 浸泡后的玻璃取出干燥后在 1050°C~1200°C温度下烧结成致密 的掺杂 Eu离子的高硅氧发光玻璃板。
所述掺杂 Eu离子的高硅氧发光玻璃板的厚度为 0.1mm~50mm。
所述掺杂 Eu离子的高硅氧发光玻璃板为吸收波长为 210nm~410nm的光 而发射波长为 430〜460nm蓝光的发光玻璃板。
所述的黄色荧光粉为能够吸收掺杂 Eu离子的高硅氧发光玻璃板发出的蓝 光而发射出黄颜色的光的材料， 其最大发射峰位置在 530nm~590nm。 黄色荧 光粉优选是具有宽谱带激发的硅酸盐荧光粉或者以 Ce为激活剂的稀土石榴石 体系荧光粉中的一种或两种。比如 YAG: Ce体系荧光粉 (如大连路明发光科技 股份有限公司商品编号 LMY-60-C的材料)、 硅酸盐体系荧光粉 (如大连路明发 光科技股份有限公司商品编号 LMS-550的材料)、氮化物体系荧光粉 (如北京中 村宇极科技有限公司商品编号 ZYP560的材料)等；
所述绿色荧光粉为能够吸收掺杂 Eu离子的高硅氧发光玻璃板发出的蓝光 而发射出绿颜色的光的材料，绿色荧光粉的最大发射峰位置在 490nm~525nm， 所述绿色荧光粉优选为氯硅酸盐荧光粉或 Ca3Sc2Si3012 : Ce绿色发光材料。 比 如化学式满足 Ca8+yEuxMnyMg (Si04) 4C12的氯硅酸盐荧光粉、 Ca3Sc2Si3012 : Ce荧光粉等。
所述的红色荧光粉为能够吸收掺杂 Eu离子的高硅氧发光玻璃板发出的蓝 光而发射出红颜色的光的材料， 所述的红色荧光粉为最大发射峰位置在 595nm~680nm 的硫化物荧光粉或氮化物荧光粉。 硫化物荧光粉选择如 CaS:Eu,SrS:Eu等， 氮化物荧光粉选择如北京中村宇极科技有限公司商品编号 ZYP630的发光材料。
所述黄色荧光粉与红色荧光粉的混合物中， 黄色荧光粉与红色荧光粉的重 量比为 1:0.1-1:1 。
所述绿色荧光粉与红色荧光粉的混合物中，绿色荧光粉与红色荧光粉的重 量比为 1:0.1~1:1。
本发明采用在支撑板上设有至少一个发射波长在 210nm~410nm范围内的 紫光 LED半导体光源， 紫光 LED半导体光源发射紫外光， 照射在掺杂 Eu离 子的高硅氧发光玻璃板上，掺杂 Eu离子的高硅氧发光玻璃将紫光 LED发出的 210nm~410nm范围内的紫外光高效地转化为发光波峰在 450nm左右的强蓝 光， 通过调整 Eu在高硅氧发光玻璃中的掺杂浓度和玻璃的厚度来控制对紫外 光的吸收和蓝光的发光强度，然后蓝光再激发高硅氧发光玻璃板上设置的适合 450nm激发的黄色荧光粉与红色荧光粉的混合物、绿色荧光粉与红色荧光粉的 混合物、黄色荧光粉中的一种发光，蓝光和荧光粉所发的光复合形成不同色温、 不同显色指数的白光， 从而实现合成高显色系数的白光。 附图说明
下面将结合附图及实施例对本发明作进一步说明， 附图中： 图 1是掺杂 Eu离子的高硅氧发光玻璃的激发光谱与发射光谱；
图 2是本发明中的一种基于紫光 LED的白光发光装置；
图 3是黄色荧光粉 LMS-550的激发与发射光谱图。 具体实施方式
以下通过实施例和附图对本发明进一步详述。
掺杂 Eu的高硅氧发光玻璃的制备方法如下：
首先将含有 Eu离子的原料制成含有 Eu离子的水溶液、 硝酸溶液、 硫酸溶 液、 乙醇溶液或丙酮溶液， 再将 Si02含量超过 95wt%的高硅氧多孔玻璃浸入所 述的溶液中， 其中 Eu离子的浓度为 0.005〜0.1M， 根据对紫外光的吸收和蓝光 的发光强度要求不同， 可以将高硅氧多孔玻璃浸泡在不同浓度的 Eu离子溶液 中， 制成不同 Eu离子含量的高硅氧发光玻璃， 来控制对紫外光的吸收和蓝光 的发光强度， 浸泡后的高硅氧多孔玻璃取出干燥， 然后放入高温炉中， 在 95%N2+5%H2还原气氛下， 经过 1050°C ~1200°C的高温烧结 2小时， 关闭高温 炉电源， 让玻璃随炉冷却， 制得掺有 Eu的高硅氧蓝光发光玻璃。 图 1 给出了 掺杂 Eu离子的高硅氧发光玻璃的激发光谱与发射光谱， 从图中可以看出， 该 种玻璃强烈的吸收 240nm~410m的光， 实现 450nm左右的强蓝光发射。
本发明实施例中所采用的适合 450nm激发的黄、 绿、 红荧光粉均可采用 市售商业， 直接加以利用。
实施例 1，如图 2所示，一种基于紫光 LED的白光发光装置，包括外壳 3， 外壳 3内设有支撑板 2，在支撑板 2上设有至少一个发射波长在 210nm~410nm 范围内的紫光 LED半导体光源 1，本实施例设置四个紫光 LED半导体光源 1， 外壳 1内还设置有与紫光 LED半导体光源 1相对的掺杂 Eu离子的高硅氧发光 玻璃板 4，紫光 LED半导体光源 1与掺杂 Eu离子的高硅氧发光玻璃板 4之间 留有间距， 背向紫光 LED半导体光源的高硅氧发光玻璃板一面设有黄色荧光 粉与红色荧光粉的混合物、绿色荧光粉与红色荧光粉的混合物、黄色荧光粉中 的一种形成的荧光粉层 5。荧光粉层 5是将上述荧光粉分散在透明的环氧树脂 中以旋涂或喷涂等方式直接涂敷在高硅氧发光玻璃板 4的表面形成的。
实施例 2， 一种基于紫光 LED的白光发光装置， 其荧光粉层 5中的黄色 荧光粉是具有宽谱带激发的硅酸盐荧光粉，本实施例选用大连路明发光科技股 份有限公司 LMS系列稀土激活的硅酸盐荧光粉 （商品编号 LMS-550), 本实 施例装置的结构、 紫光 LED的选择及荧光粉的涂敷方式同实施例 1 ， 在此不 再赘述。
黄色荧光粉 LMS-550的激发与发射光谱见图 3， 从其激发光谱可以看出 LMS-550荧光粉可以高效的吸收从 300nm到 460nm左右的蓝紫光而发射出 550nm左右的黄光。在本装置中， 紫光 LED发射出的 365nm的紫光大部分被 掺杂 Eu的高硅氧发光玻璃板 4吸收， 而发射出 442nm的蓝光， 掺杂 Eu的高 硅氧发光玻璃板 4发射的蓝光又可以被高硅氧发光玻璃板 4外涂敷的 LMS-550 荧光粉部分吸收而发射出黄光， 剩余的蓝光和发出的黄光复合形成白光。
实施例 3， 一种基于紫光 LED的白光发光装置， 其荧光粉层 5中的选用 黄色荧光粉为 Ce为激活剂的稀土石榴石体系荧光粉， 本实施例选用大连路明 发光科技股份有限公司， 商品编号 LMY-60-C 的荧光粉。 装置的结构、 紫光 LED的选择及荧光粉的涂敷方式同实施例 1 ， 在此不再赘述。
实施例 4， 一种基于紫光 LED的白光发光装置， 其荧光粉层 5中的选用 黄色荧光粉和红色荧光粉的混合物，增加了白光发光装置的显色性，黄色荧光 粉和红色荧光粉的重量比为 1 : 0.4，其中黄色荧光粉选用大连路明发光科技股 份有限公司 LMS系列稀土激活的硅酸盐荧光粉 （商品编号 LMS-550), 红色 荧光粉选用北京中村宇极科技有限公司 ZYP650H红色荧光粉。 装置的结构、 紫光 LED的选择及荧光粉的涂敷方式同实施例 1 ， 在此不再赘述。
实施例 5， 一种基于紫光 LED的白光发光装置， 其荧光粉层 5中的选用 绿色荧光粉和红色荧光粉的混合物，增加了白光发光装置的显色性，绿色荧光 粉和红色荧光粉的重量比为 1 : 0.6绿色荧光粉选用大连路明发光科技股份有 限公司 LMS系列稀土激活的硅酸盐荧光粉 （商品编号 LMS-520) , 红色荧光 粉选用北京中村宇极科技有限公司 ZYP650H红色荧光粉。 装置的结构、 紫光 LED的选择及荧光粉的涂敷方式同实施例 1 ， 在此不再赘述。
实施例 6， 一种基于紫光 LED的白光发光装置， 其荧光粉层 5中的选用绿 色荧光粉和红色荧光粉的混合物，增加了白光发光装置的显色性，绿色荧光粉 和红色荧光粉的重量比为 1 : 0.5，绿色荧光粉选用 Ca8_x_yEuxMnyMg(Si04)4Cl2，， 红色荧光粉选用北京中村宇极科技有限公司 ZYP650H红色荧光粉， 装置的结 构、 紫光 LED的选择及荧光粉的涂敷方式同实施例 1 ， 在此不再赘述。
实施例 7， 一种基于紫光 LED的白光发光装置， 其荧光粉层 5中的选用绿 色荧光粉和红色荧光粉的混合物，增加了白光发光装置的显色性，绿色荧光粉 和红色荧光粉的重量比为 1 : 0.2, 绿色荧光粉选用 Ca3Sc2Si3012: Ce， 红色荧 光粉选用 CaS : Eu, 装置的结构、 紫光 LED的选择及荧光粉的涂敷方式同实施 例 1 ， 在此不再赘述。
实施例 8， 一种基于紫光 LED的白光发光装置， 其荧光粉层 5中的选用绿 色荧光粉和红色荧光粉的混合物，增加了白光发光装置的显色性，绿色荧光粉 和红色荧光粉的重量比为 1 : 0.1， 绿色荧光粉选用 Ca3Sc2Si3012: Ce， 红色荧 光粉选用 SrS: Eu, 装置的结构、 紫光 LED的选择及荧光粉的涂敷方式同实施 例 1 ， 在此不再赘述。
实施例 9， 一种基于紫光 LED的白光发光装置， 其荧光粉层 5中的选用绿 色荧光粉和红色荧光粉的混合物，增加了白光发光装置的显色性，绿色荧光粉 和红色荧光粉的重量比为 1 : 1， 绿色荧光粉选用 Ca3Sc2Si3012 : Ce, 红色荧光 粉选用 CaS : Eu, 装置的结构、 紫光 LED的选择及荧光粉的涂敷方式同实施例 1 ， 在此不再赘述。
实施例 10， 一种基于紫光 LED的白光发光装置， 其荧光粉层 5中的选用 黄色荧光粉和红色荧光粉的混合物，增加了白光发光装置的显色性，黄色荧光 粉和红色荧光粉的重量比为 1 : 0.1，其中黄色荧光粉选用大连路明发光科技股 份有限公司 LMS系列稀土激活的硅酸盐荧光粉 （商品编号 LMS-560), 红色 荧光粉选用北京中村宇极科技有限公司 ZYP630H红色荧光粉。 装置的结构、 紫光 LED的选择及荧光粉的涂敷方式同实施例 1 ， 在此不再赘述。
实施例 11， 一种基于紫光 LED的白光发光装置， 其荧光粉层 5中的选用 黄色荧光粉和红色荧光粉的混合物，增加了白光发光装置的显色性，黄色荧光 粉和红色荧光粉的重量比为 1 : 1， 其中黄色荧光粉选用大连路明发光科技股 份有限公司 LMS系列稀土激活的硅酸盐荧光粉 （商品编号 LMS-555 ), 红色 荧光粉选用北京中村宇极科技有限公司 ZYP650红色荧光粉。装置的结构、紫 光 LED的选择及荧光粉的涂敷方式同实施例 1 ， 在此不再赘述。

Claims

权 利 要 求
1、 一种基于紫光 LED 的白光发光装置， 其特征在于， 包括外壳， 外壳 内设有支撑板，在支撑板上设有至少一个发射波长在 210nm~410nm范围内的 紫光 LED半导体光源， 外壳内还设置有与紫光 LED半导体光源相对的掺杂 Eu离子的高硅氧发光玻璃板，背向紫光 LED半导体光源的高硅氧发光玻璃板 一面设有黄色荧光粉与红色荧光粉的混合物、 绿色荧光粉与红色荧光粉的混 合物、 黄色荧光粉中的一种形成的荧光粉层。
2、 根据权利要求 1所述的基于紫光 LED的白光发光装置， 其特征在于， 所述掺杂 Eu离子的高硅氧发光玻璃板为吸收波长为 210nm~410nm的光而发 射波长为 430〜460nm蓝光的发光玻璃板。
3、 根据权利要求 2所述的基于紫光 LED的白光发光装置， 其特征在于， 所述掺杂 Eu离子的高硅氧发光玻璃板的厚度为 0.1mm~50mm。
4、 根据权利要求 1〜3任意一项所述的基于紫光 LED的白光发光装置， 其特征在于，所述的黄色荧光粉为最大发射峰位置在 530nm~590nm的荧光粉。
5、 根据权利要求 4所述的基于紫光 LED的白光发光装置， 其特征在于， 所述的黄色荧光粉是具有宽谱带激发的硅酸盐荧光粉、或者以 Ce为激活剂的 稀土石榴石体系荧光粉中的一种或两种。
6、 根据权利要求 1〜3任意一项所述的基于紫光 LED的白光发光装置， 其特征在于， 所述绿色荧光粉为最大发射峰位置在 490nm~525nm的荧光粉。
7、 根据权利要求 6所述的基于紫光 LED的白光发光装置， 其特征在于， 所述绿色荧光粉为氯硅酸盐荧光粉或 Ca3Sc2Si3012 : Ce绿色发光材料。
8、 根据权利要求 1〜3任意一项所述的基于紫光 LED的白光发光装置， 其特征在于，所述的红色荧光粉为最大发射峰位置在 595nm~680nm的硫化物 荧光粉或氮化物荧光粉。
9、 根据权利要求 1〜3任意一项所述的基于紫光 LED的白光发光装置， 其特征在于，所述黄色荧光粉与红色荧光粉的混合物中，黄色荧光粉与红色荧 光粉的重量比为 1:0.1~1:1。
10、 根据权利要求 1〜3任意一项所述的基于紫光 LED的白光发光装置， 其特征在于， 所述绿色荧光粉与红色荧光粉的混合物中， 绿色荧光粉与红色 荧光粉的重量比为 1:0.1~1:1。
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