WO2011072213A2 - Production de graphène et de catalyseurs nanoparticulaires supportés sur le graphène à l'aide d'un rayonnement laser - Google Patents
Production de graphène et de catalyseurs nanoparticulaires supportés sur le graphène à l'aide d'un rayonnement laser Download PDFInfo
- Publication number
- WO2011072213A2 WO2011072213A2 PCT/US2010/059870 US2010059870W WO2011072213A2 WO 2011072213 A2 WO2011072213 A2 WO 2011072213A2 US 2010059870 W US2010059870 W US 2010059870W WO 2011072213 A2 WO2011072213 A2 WO 2011072213A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- graphene
- nanocomposite
- metal
- water
- semiconductor
- Prior art date
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 277
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 228
- 239000002105 nanoparticle Substances 0.000 title claims abstract description 87
- 238000004519 manufacturing process Methods 0.000 title abstract description 34
- 230000005855 radiation Effects 0.000 title abstract description 31
- 239000003054 catalyst Substances 0.000 title abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 101
- 239000002114 nanocomposite Substances 0.000 claims abstract description 97
- 229910052751 metal Inorganic materials 0.000 claims abstract description 68
- 239000002184 metal Substances 0.000 claims abstract description 68
- 239000004065 semiconductor Substances 0.000 claims abstract description 56
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 51
- 239000010439 graphite Substances 0.000 claims abstract description 51
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 155
- 229910001868 water Inorganic materials 0.000 claims description 137
- 239000000243 solution Substances 0.000 claims description 115
- 238000006243 chemical reaction Methods 0.000 claims description 63
- 239000000463 material Substances 0.000 claims description 52
- 230000002829 reductive effect Effects 0.000 claims description 50
- 239000011149 active material Substances 0.000 claims description 44
- 229910052737 gold Inorganic materials 0.000 claims description 29
- 239000013535 sea water Substances 0.000 claims description 26
- 239000010410 layer Substances 0.000 claims description 22
- 229910052709 silver Inorganic materials 0.000 claims description 20
- -1 Horn Er Inorganic materials 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 14
- 239000007787 solid Substances 0.000 claims description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052763 palladium Inorganic materials 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 239000002356 single layer Substances 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 3
- 229910052792 caesium Inorganic materials 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229920000307 polymer substrate Polymers 0.000 claims description 3
- 229910052701 rubidium Inorganic materials 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 abstract description 29
- 150000002739 metals Chemical class 0.000 abstract description 12
- 230000001678 irradiating effect Effects 0.000 abstract description 7
- 239000010931 gold Substances 0.000 description 85
- 238000006722 reduction reaction Methods 0.000 description 77
- 230000009467 reduction Effects 0.000 description 76
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 38
- 230000015572 biosynthetic process Effects 0.000 description 36
- 229910021645 metal ion Inorganic materials 0.000 description 35
- 238000002441 X-ray diffraction Methods 0.000 description 31
- 238000010521 absorption reaction Methods 0.000 description 31
- 238000010438 heat treatment Methods 0.000 description 26
- 239000002904 solvent Substances 0.000 description 24
- 235000019441 ethanol Nutrition 0.000 description 23
- 238000006392 deoxygenation reaction Methods 0.000 description 21
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 21
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 description 20
- 238000010612 desalination reaction Methods 0.000 description 19
- 210000004027 cell Anatomy 0.000 description 18
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 18
- 229920001223 polyethylene glycol Polymers 0.000 description 18
- 238000001228 spectrum Methods 0.000 description 18
- 239000002202 Polyethylene glycol Substances 0.000 description 17
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 17
- 230000007246 mechanism Effects 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 15
- 239000002245 particle Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- 239000000126 substance Substances 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- 238000003786 synthesis reaction Methods 0.000 description 13
- 210000001519 tissue Anatomy 0.000 description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 12
- 229910021118 PdCo Inorganic materials 0.000 description 11
- 238000013459 approach Methods 0.000 description 11
- 238000002474 experimental method Methods 0.000 description 11
- 229910052736 halogen Inorganic materials 0.000 description 11
- 230000003647 oxidation Effects 0.000 description 11
- 238000007254 oxidation reaction Methods 0.000 description 11
- 230000036961 partial effect Effects 0.000 description 11
- 238000003917 TEM image Methods 0.000 description 10
- 238000000862 absorption spectrum Methods 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 238000001704 evaporation Methods 0.000 description 9
- 150000003839 salts Chemical class 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 238000009833 condensation Methods 0.000 description 8
- 230000005494 condensation Effects 0.000 description 8
- 230000008034 disappearance Effects 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 238000007540 photo-reduction reaction Methods 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 238000011946 reduction process Methods 0.000 description 8
- 238000002371 ultraviolet--visible spectrum Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 230000005611 electricity Effects 0.000 description 7
- 230000005284 excitation Effects 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 238000001126 phototherapy Methods 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 230000003197 catalytic effect Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- 230000003247 decreasing effect Effects 0.000 description 6
- 229910052500 inorganic mineral Inorganic materials 0.000 description 6
- 239000002082 metal nanoparticle Substances 0.000 description 6
- 239000011707 mineral Substances 0.000 description 6
- 235000010755 mineral Nutrition 0.000 description 6
- 230000001699 photocatalysis Effects 0.000 description 6
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(I) nitrate Inorganic materials [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 235000014692 zinc oxide Nutrition 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 238000001069 Raman spectroscopy Methods 0.000 description 5
- 238000003491 array Methods 0.000 description 5
- 230000005670 electromagnetic radiation Effects 0.000 description 5
- 125000003700 epoxy group Chemical group 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 239000008188 pellet Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 229910014033 C-OH Inorganic materials 0.000 description 4
- 229910014570 C—OH Inorganic materials 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 4
- 206010028980 Neoplasm Diseases 0.000 description 4
- 238000001237 Raman spectrum Methods 0.000 description 4
- 238000006555 catalytic reaction Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 4
- 239000013505 freshwater Substances 0.000 description 4
- 239000005543 nano-size silicon particle Substances 0.000 description 4
- 239000003973 paint Substances 0.000 description 4
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000004061 bleaching Methods 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 230000021615 conjugation Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 239000011236 particulate material Substances 0.000 description 3
- 238000007626 photothermal therapy Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000002000 scavenging effect Effects 0.000 description 3
- 239000010944 silver (metal) Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 230000009897 systematic effect Effects 0.000 description 3
- 230000000930 thermomechanical effect Effects 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- IKHGUXGNUITLKF-UHFFFAOYSA-N Acetaldehyde Chemical compound CC=O IKHGUXGNUITLKF-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 238000001016 Ostwald ripening Methods 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 231100000481 chemical toxicant Toxicity 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 235000013305 food Nutrition 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000008236 heating water Substances 0.000 description 2
- 238000007210 heterogeneous catalysis Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 238000004093 laser heating Methods 0.000 description 2
- 239000006193 liquid solution Substances 0.000 description 2
- 244000144972 livestock Species 0.000 description 2
- 230000005291 magnetic effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011943 nanocatalyst Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 239000002574 poison Substances 0.000 description 2
- 231100000614 poison Toxicity 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000001988 small-angle X-ray diffraction Methods 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000009182 swimming Effects 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 239000003440 toxic substance Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- FFRBMBIXVSCUFS-UHFFFAOYSA-N 2,4-dinitro-1-naphthol Chemical compound C1=CC=C2C(O)=C([N+]([O-])=O)C=C([N+]([O-])=O)C2=C1 FFRBMBIXVSCUFS-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 101710134784 Agnoprotein Proteins 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 241000207199 Citrus Species 0.000 description 1
- 241000195493 Cryptophyta Species 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- 229910004042 HAuCl4 Inorganic materials 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- 241000699670 Mus sp. Species 0.000 description 1
- 241000872198 Serjania polyphylla Species 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 210000000577 adipose tissue Anatomy 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012496 blank sample Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 201000011510 cancer Diseases 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 235000020971 citrus fruits Nutrition 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004567 concrete Substances 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002316 cosmetic surgery Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005474 detonation Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 210000003780 hair follicle Anatomy 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000002262 irrigation Effects 0.000 description 1
- 238000003973 irrigation Methods 0.000 description 1
- 208000002780 macular degeneration Diseases 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000003863 metallic catalyst Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000002077 nanosphere Substances 0.000 description 1
- 239000008239 natural water Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001473 noxious effect Effects 0.000 description 1
- 239000002420 orchard Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000006213 oxygenation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- GPNDARIEYHPYAY-UHFFFAOYSA-N palladium(II) nitrate Inorganic materials [Pd+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O GPNDARIEYHPYAY-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 238000013032 photocatalytic reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002516 radical scavenger Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XYYVDQWGDNRQDA-UHFFFAOYSA-K trichlorogold;trihydrate;hydrochloride Chemical compound O.O.O.Cl.Cl[Au](Cl)Cl XYYVDQWGDNRQDA-UHFFFAOYSA-K 0.000 description 1
- 210000004881 tumor cell Anatomy 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
- H01L33/343—Materials of the light emitting region containing only elements of Group IV of the Periodic Table characterised by the doping materials
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B18/00—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body
- A61B18/18—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by applying electromagnetic radiation, e.g. microwaves
- A61B18/20—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by applying electromagnetic radiation, e.g. microwaves using laser
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61K—PREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
- A61K41/00—Medicinal preparations obtained by treating materials with wave energy or particle radiation ; Therapies using these preparations
- A61K41/0052—Thermotherapy; Hyperthermia; Magnetic induction; Induction heating therapy
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N5/00—Radiation therapy
- A61N5/06—Radiation therapy using light
- A61N5/0613—Apparatus adapted for a specific treatment
- A61N5/062—Photodynamic therapy, i.e. excitation of an agent
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N5/00—Radiation therapy
- A61N5/06—Radiation therapy using light
- A61N5/067—Radiation therapy using light using laser light
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J21/00—Catalysts comprising the elements, oxides, or hydroxides of magnesium, boron, aluminium, carbon, silicon, titanium, zirconium, or hafnium
- B01J21/18—Carbon
- B01J21/185—Carbon nanotubes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/89—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with noble metals
- B01J23/8913—Cobalt and noble metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/20—Catalysts, in general, characterised by their form or physical properties characterised by their non-solid state
- B01J35/23—Catalysts, in general, characterised by their form or physical properties characterised by their non-solid state in a colloidal state
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/16—Reducing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/34—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
- B01J37/349—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of flames, plasmas or lasers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
- C01B3/02—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen
- C01B3/32—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air
- C01B3/34—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents
- C01B3/38—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents using catalysts
- C01B3/40—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents using catalysts characterised by the catalyst
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/19—Preparation by exfoliation
- C01B32/192—Preparation by exfoliation starting from graphitic oxides
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/02—Treatment of water, waste water, or sewage by heating
- C02F1/04—Treatment of water, waste water, or sewage by heating by distillation or evaporation
- C02F1/14—Treatment of water, waste water, or sewage by heating by distillation or evaporation using solar energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0054—Processes for devices with an active region comprising only group IV elements
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2203/00—Integrated processes for the production of hydrogen or synthesis gas
- C01B2203/10—Catalysts for performing the hydrogen forming reactions
- C01B2203/1041—Composition of the catalyst
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2203/00—Integrated processes for the production of hydrogen or synthesis gas
- C01B2203/10—Catalysts for performing the hydrogen forming reactions
- C01B2203/1041—Composition of the catalyst
- C01B2203/1047—Group VIII metal catalysts
- C01B2203/1064—Platinum group metal catalysts
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2203/00—Integrated processes for the production of hydrogen or synthesis gas
- C01B2203/10—Catalysts for performing the hydrogen forming reactions
- C01B2203/1041—Composition of the catalyst
- C01B2203/1082—Composition of support materials
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2103/00—Nature of the water, waste water, sewage or sludge to be treated
- C02F2103/08—Seawater, e.g. for desalination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A20/00—Water conservation; Efficient water supply; Efficient water use
- Y02A20/124—Water desalination
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A20/00—Water conservation; Efficient water supply; Efficient water use
- Y02A20/124—Water desalination
- Y02A20/138—Water desalination using renewable energy
- Y02A20/142—Solar thermal; Photovoltaics
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A20/00—Water conservation; Efficient water supply; Efficient water use
- Y02A20/20—Controlling water pollution; Waste water treatment
- Y02A20/208—Off-grid powered water treatment
- Y02A20/212—Solar-powered wastewater sewage treatment, e.g. spray evaporation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/52—Improvements relating to the production of bulk chemicals using catalysts, e.g. selective catalysts
Definitions
- the invention generally relates to methods and apparatuses to produce graphene and nanoparticle catalysts supported on graphene without the use of reducing agents.
- the invention provides methods and apparatuses which use ultraviolet (UV), visible (VIS) and/or infrared (IR) light to reduce (deoxygenate) graphite oxide (GO) to graphene, or to reduce a mixture of GO plus one or more metals ions to produce nanoparticle catalysts supported on graphene.
- the invention further provides methods and systems to generate and utilize heat that is produced by irradiating GO, graphene and their metal and semiconductor nanocomposites with UV, VIS, and/or IR radiation, e.g. using sunlight, lasers, etc.
- An embodiment of the invention provides methods of making graphene sheets and metallic catalysts supported on graphene sheets by exposing graphite oxide (GO) or GO plus one or more metal ions to UV, VIS, and/or IR radiation.
- the methods of the invention do not require the use of other reducing agents to covert GO to graphene and thus contamination of the graphene by such agents and the generation of noxious by-products is eliminated.
- the technology provided herein is thus "green technology” i.e. the technology is environmentally friendly.
- exposing GO, graphene, and metal and semiconductor nanocomposites of GO and graphene to UV, VIS, and/or IR radiant energy results in the highly efficient production of heat (photothermal energy conversion), and methods and apparatuses for the production of heat in this manner are provided.
- the materials used to generate heat in this manner can be regenerated and reused.
- the GO provided in the providing step is in solution, and the solution may be an aqueous solution. Li other embodiments, the solution comprises one or more organic solvents.
- the GO provided in the providing step is solid graphite oxide.
- the method is carried out in the absence of chemical reducing agents.
- the GO provided in the providing step is mixed with at least one metal or metal alloy and the exposing step produces metal or metal alloy nanoparticles supported on the graphene.
- At least one of said at least one metals may be selected from the group consisting of Au, Ag, Pd. Co, Pd, Co, Au, Ag, Cu, Pt, Ni, Fe, Mn, Cr, V, Ti, Sc, Ce, Pr, Nd, Sm t Gd, Horn Er, Yb, Al, Ga, Sn, Pb, In, Mg, Ca, Sr, Na, K, Rb, and Cs.
- the GO provided in the providing step is mixed with at least one semiconductor material, and the exposing step produces semiconductor nanoparticles supported on the graphene.
- the at least one semiconductor material may be selected from the group consisting of silicon, titanium oxide and zinc oxide.
- the providing step provides GO that is exfoliated.
- the invention also provides a method of producing heat via photothermal energy conversion.
- the method comprises the step of exposing at least one photothermally active material to a source of one or more of ultraviolet (UV), visible (VIS), or infrared (IR) radiant energy, wherein the photothermally active material is selected from the group consisting of: graphite oxide (GO), partially reduced GO, graphene, a metal nanocomposite of GO, a metal nanocomposite of partially reduced GO, a metal nanocomposite of graphene, a semiconductor nanocomposite of GO, a semiconductor nanocomposite of partially reduced GO, and a semiconductor nanocomposite of graphene.
- the at least one photothermally active material is dispersed in a liquid medium.
- the source of one or more of ultraviolet (UV), visible (VIS), or infrared (IR) light energy is sunlight; in other embodiments, the source of one or more of ultraviolet (UV), visible (VIS), or infrared (IR) light energy is a laser.
- the invention also provides an apparatus for producing heat via photothermal energy conversion.
- the apparatus comprises: 1) a container for containing at least one
- the container permitting exposure of the at least one photothermally active material to a source of one or more of ultraviolet (UV), visible (VIS), or infrared (IR) light energy
- the photothermally active material being selected from the group consisting of: graphite oxide (GO), partially reduced GO, graphene, a metal nanocomposite of GO, a metal nanocomposite of partially reduced GO, a metal nanocomposite of graphene, a semiconductor nanocomposite of GO, a semiconductor nanocomposite of partially reduced GO, and a semicomductor nanocomposite of graphene); 2) a container for containing a heatable medium; and 3) one or more conduits for transporting heated medium to location where heat is to be released from said heated medium.
- the heatable medium is water.
- the container for containing at least one photothermally active material and the container for containing a heatable medium are the same container.
- the invention also provides an apparatus for desalinating sea water.
- the apparatus comprises 1 ⁇ a container for containing at least one photothermally active material, the container permitting exposure of the at least one photothermally active material to a source of one or more of ultraviolet (UV), visible (VIS), or infrared (IR) light energy, and the photothermally active material being selected from the group consisting of: graphite oxide (GO), partially reduced GO, graphene, a metal nanocomposite of GO, a metal
- nanocomposite of partially reduced GO a metal nanocomposite of graphene, a
- the container for containing at least one photothermally active material and the container for containing sea water are the same container.
- the invention also provides a method for destroying unwanted cells or tissue in a subject in need thereof, comprising the steps of 1) placing at least one photothermally active material at or near said unwanted cells or tissue; and 2) exposing the at least one photothermally active material to a source of one or more of ultraviolet (UV), visible (VIS), or infrared (IR) radiant energy, the photothermally active material being selected from the group consisting of: graphite oxide (GO), partially reduced GO, graphene, a metal nanocomposite of GO, a metal nanocomposite of partially reduced GO, a metal nanocomposite of graphene, a semiconductor nanocomposite of GO, a semiconductor nanocomposite of partially reduced GO, and a semicomductor nanocomposite of graphene; Heat produced in the exposing step destroys said unwanted cells or tissue in said subject.
- the unwanted cells or tissue are hyperproliferating cells or tissue.
- the invention also provides a photovoltaic cell, comprising a transparent conducting layer, a photoabs orbing layer comprising at least one semiconductor nanocomposite of graphene; and a back electrode.
- the transparent conducting layer comprises a graphene monolayer on a glass or polymer substrate; and in another embodiment, the back electrode comprises graphene.
- the graphene is made by the methods of the invention.
- the invention provides a light-emitting-diode (LED), comprising a substrate, and a semiconductor nanocomposite of graphene associated with the substrate.
- the semiconductor nanocomposite of graphene is doped with impurities to create a p-n junction on the substrate.
- the graphene is made by the methods of the invention,
- FIG. 1A-C A, X-ray diffraction (XRD) of GO as a function of the 532 nm laser irradiation time (5W, 30 Hz) at 0, 5, and 10 min irradiation times; B, XRD of GO, LCG after laser irradiation at 532 and 355 nm; C, XRD of GO following the 1064 nra laser irradiation for 1 and 2 min using 100 mJ/pulse, 30 Hz.
- XRD X-ray diffraction
- a and B UV-vis (ultraviolet- visible) spectra of GO and LCG dispersed in ethanoi;
- B UV-vis spectra showing the change of GO solution in water as a function of laser irradiation time (532 nm, 5 W, 30 Hz).
- FIG. 3A-D A, Fourier transform-Infrared (FT-IR) spectra of graphite oxide (GO) and laser converted graphene (LCG); B, XPS CI s spectra of GO and LCG; C, Raman spectra of GO and graphene formed after laser irradiation of GO.
- FT-IR Fourier transform-Infrared
- FIG. A and B Temperature changes during laser irradiation of graphite oxide solutions with the fundamental (1064 nm), 2 nd harmonic (532 nm), and 3rd harmonic (355 nm) of the neodyniium-doped yttrium aluminium garnet (Nd/YAG) laser (5W, 30 Hz).
- the * denotes bleaching the solution after 6 min with the 355 nm irradiation (5W, 30 Hz).
- Dotted curves show the temperature changes of irradiating the same volume of pure water with the corresponding laser frequency (5W, 30 Hz);
- B Temperature changes during laser irradiation of graphite oxide solutions with the 2nd harmonic of the Nd YAG laser (532 nm, 5W, 30 Hz) after repeated irradiation cycles.
- the dashed curve shows the temperature change of irradiating the same volume of pure water with the 532 nm (5W, 30 Hz).
- the results of cycles 2-7 were largely superimposable after about 4 minutes of radiation and are shown as one line.
- Figure 5 XRD spectra of graphene oxide (GO) and laser-converted graphene (LCG) prepared by 532 nm laser irradiation (4W, 30 Hz) of GO for 10 minutes in different solvents as indicated.
- FIG. 6A and B Absorption spectra of 25 ⁇ , HAuC + GO in 50% ethanol -water, 2% PEG-water and pure water recorded after two minutes laser irradiation (532 nm, 4 W, 30 Hz). Dotted lines represent data of bank solutions containing the same amount of HAuCU but no GO under identical laser irradiation conditions.
- B Absorption spectra of the same solutions in (a) irradiated with lower laser power (532 nm, 1 W, 30 Hz) showing no formation of gold nanoparticles in the pure water solution (black).
- FIG. 7A-D A, XRD data of GO before and after the 532 nm laser irradiation (4 W, 30 Hz) for 10 minutes in different solvents as indicated.
- B XRD data of Au nanoparticles incorporated within partially reduced GO.
- C XRD data obtained after the 532 nm laser irradiation (4 W, 30 Hz) of GO in water containing different amounts of HAuCU as indicated.
- D Absorption spectra of GO solutions in water containing different amounts of HAuCU as indicated after the 532 nm laser irradiation.
- FIG. 8A and B A, XPS (CI S) spectra of GO and partially reduced GO containing Au nanoparticles prepared after 10 minutes laser irradiation (532 nm, 4 W, 30 Hz) of HAuCU - GO solutions in different solvents as indicated.
- B XPS (Au 4f) spectra of Au nanoparticles incorporated in partially reduced GO prepared in different solvents as indicated.
- FIG. 9A-C A, Absorption spectra of AgN03 - GO solutions in 50% ethanol-water, 2% PEG-water and pure water recorded after five minutes laser irradiation (532 nm, 4 W, 30 Hz). Dotted lines represent data of bank solutions containing the same amount of AgNOi but no GO after 10 minutes laser irradiation (532 nm, 4 W, 30 Hz).
- B XRD data of GO before and after the 532 nm laser irradiation (4 W, 30 Hz) for five minutes in different solvents as indicated.
- Figure 1 1A and B.
- A Repeated laser irradiation (532 nm, 30 Hz, 2 W average power) cycles of 3 niL HAuC + GO aqueous solution containing 10 HAuCL; and 0.6 mg GO.
- B Absorption spectra of the HAuCU + GO solution recorded after different irradiation cycles using the 532 nm laser irradiation with an average laser power of 2 W.
- FIG. 13A-C A, XRD of Pd nanoparticles supported on graphene; B, UV-0V Is of Ag nanoparticles supported on graphene; c, XRD of Au nanoparticles supported on graphene.
- Pd, Ag and Au nanoparticles supported on graphene were prepared by the 532nm laser irradiation in solution.
- FIG 16A and B A, Temperature changes during laser irradiation (532 nm, 4 and 5 W, 30 Hz) of graphite oxide (GO) solutions (3 ml solution, 2mg GO/10 ml H 2 0) containing 1 mg Si nanoparticles; B, Temperature changes during laser irradiation (532 nm, 5 W, 30 Hz) of graphite oxide (GO) solutions (3 ml solution, 2mg GO/10 ml 3 ⁇ 40) containing 1 mg Si nanoparticles.
- GO graphite oxide
- FIG 17A-C Laser synthesis of bimetallic PdCo nanoparticles supported on graphene.
- A XRD data of reduced grahene oxide film containing PdCo nanoparticles showing the absence of the graphene oxide diffraction peak ;
- B XRD data of reduced grahene oxide film containing PdCo nanoparticles showing the diffraction peak due to PdCo bimetallic nanoparticles;
- C TEM of bimetallic PdCo nanoparticles supported on graphene. bimetallic PdCo nanoparticles supported on graphene.
- Figure 18A and B EDS and TEM of laser synthesis of bimetallic PdCo nanoparticles supported on graphene.
- A Atomic percent composition of the PdCo bimetallic nanoparticles supported on graphene showing a composition of 70 % (at) Pd and 30% (at) Co.
- B Atomic percent composition of the PdCo bimetallic nanoparticles supported on graphene showing a composition of 90 % (at) Pd and 10% (at) Co.
- FIG. 20 Fabrication of photovoltaic (PV) and optionally light-emitting diode (LED) devices using dual purpose graphene substrates.
- PV photovoltaic
- LED light-emitting diode
- FIG. 21 Schematic of a simple solar still.
- FIG. 22 Schematic depiction of apparatus and system for production of heat by the methods of the invention.
- FIG. 23 Schematic depiction of apparatus and system for generation of electricity by the methods of the invention.
- Figure 24 Figure 23. Schematic depiction of apparatus and system for desalination by the methods of the invention.
- FIG. 25 Schematic depiction of light-emitting-diode (LED) of the invention.
- the invention provides advances in 1) the manufacture of graphene (using either GO in solution or solid GO); 2) the manufacture of metal catalysts supported on graphene; and 3) the generation of heat using reusable GO, graphene and metal or semiconductor nanocomposites thereof.
- UV light we mean electromagnetic radiation with wavelength in the range of from about 10 to 400nm.
- visible (VIS) light we mean electromagnetic radiation in the range of from about 390 nm to 750 nm.
- ultraviolet light we mean electromagnetic radiation in the range of from about 0.7 to about 300 micrometers ( ⁇ ).
- light energy or as “UV-VIS-IR energy” or “UV-VIS-IR light”
- UV-VIS-IR light we mean electromagnetic radiation with wavelength in the range of from about 10 to 400nm.
- UV-VIS-IR energy ultraviolet-VIS-IR energy
- graphene we mean sp 2 -bonded carbon atoms that are densely packed in a one- atom-thick planar sheet.
- Graphene atoms form a honeycomb or “chicken-wire” atomic scale crystal lattice made of carbon atoms and their bonds.
- the crystalline or “flake” form of graphite consists of many graphene sheets stacked together.
- Graphite oxide (formerly called graphitic oxide or graphitic acid) as used herein, refers to a compound of carbon, oxygen, and hydrogen in variable ratios, obtained by treating graphite with strong oxidizers.
- the maximally oxidized bulk product is a yellow solid with C:0 ratio between 2.1 and 2.9, that retains the layer structure of graphite but with a much larger and irregular spacing.
- the structure and properties of graphite oxide are variable and depend on the particular synthesis method and degree of oxidation. It typically preserves the layer structure of the parent graphite, but the layers are buckled and the interlayer spacing is about two times larger ( ⁇ 7 A) than that of graphite. Strictly speaking "oxide" is an incorrect but historically established name.
- exfoliated graphite oxide we mean GO in which the layers have been separated.
- graphene is produced by irradiating, with "light” or “radiant” energy, GO in suspension or dispersed in a liquid medium without the use of any chemical reducing agent. Irradiation is carried out in a manner that results in reduction and hence deoxygenation of the GO, and the production of the characteristic sp 2 -bonded carbon atoms densely packed in a one-atom-thick planar sheet.
- Liquid media that can be used to disperse GO in a manner suitable for irradiation include but are not limited to: aqueous-based media such as water; aqueous solutions of water and alcohols such as ethanol (e.g. from about 10 to about 90 % ETOH, or from about 20 to about 80%, or from about 30 to about 70%, or from about 40 to about 60%, and usually about 50% ETOH); solutions of polyethylene glycol (PEG) in water (e.g. from about 1% to about 10%, e.g. about 1 , 2, 3, 4, 5, 6, 7, 8, 9 or 10% PEG in water); other alcohols such as methanol, isopropanol, etc., or other polar liquids such as acetonitrile,
- PEG polyethylene glycol
- the concentration of GO in the medium that is irradiated is generally in the range of from about 0.1 mg/mL (or even less) to about 10 mg/mL(or greater), and is usually in the range of from about 1 mg/mL to about 5 mg/mL.
- Types of light energy that may be used in the production of graphene from GO include but are not limited to various sources of UV, VIS and/or IR radiation such as lasers, radiation from tungsten-halogen lamps, sunlight, mercury lamps, hydrogen lamps, etc. Any source that provides a suitable wavelength of light may be used in the practice of the invention
- the wavelength that is used is generally in the range of from about 100 to about 800 nm, or from about 300 to about 1 lOOnm, and may be, for example, about 193 nm, or about 266 nm, or about 248 nm, or about 308 nm, or about 355 nm, or about 532 nm, or about 980 nm, or about 1064 nm.
- the power of the laser radiation is generally in the range of from about IWatt (W) to about 10W, and is generally in the range of from about 2W to about 9W, or even in the range of from about 3W to about 8W, i.e.
- the frequency i.e. number of cycles per second, "hertz” or "Hz"
- the frequency is generally in the range of from about 10 to about 50 Hz, or from about 20 to about 40 Hz, and may be about 30Hz.
- a YAG laser is employed at 355 nm, 5W and 30 Hz.
- the power employed is generally in the range of from about 100 to 1000W, and may be from about 200 to about 900W, or from about 300 to about 800W, or from about 400 to about 700W, or from about 500 to about 600W, with a power of about 500W being frequently used.
- the length of exposure of GO to the light energy will vary depending on the type and strength of radiation that is used, the concentration of GO in the suspension, and the solution volume. Generally, these variables are adjusted so that the time of radiation is in the range of from about 1 to about 10 minutes, i.e. about 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10 minutes. Further, several cycles of irradiation may be used, e.g. from about 1 to about 10 or more cycles (i.e. about 1 , 2, 3, 4, 5, 6, 7, 8, 9, or 10 cycles) with each cycle including an exposure of the GO to the source of radiation of at least about one minute or more, as described above.
- the GO Prior to exposing the GO to light energy, the GO may be exfoliated in order to separate the layers. This is generally accomplished by dispersing GO in water using ultrasonic or stirring until a clear well-dispersed solution is obtained with a golden yellow color.
- the starting temperature at which the conversion of GO to graphene is carried out is generally ambient (i.e. room) temperature, i.e. about 20 to 25°C (68 to 77°F), although this need not always be the case. In some embodiments, the temperature may be higher (e.g. up to about 37°C) or lower (e.g. as low as about 1-2°C) while still successfully producing graphene. It is also possible to start with frozen GO solution (below 0 °C, e.g. -50°C or - 10°C, etc.) and convert the frozen solution to liquid by the photothermal effect of GO. Those of skill in the art will recognize that an increase in starting temperature may accelerate the reaction whereas a decrease in initial temperature may slow the reaction rate, either of which may be desirable for particular applications.
- irradiation is carried out in a manner that results in the complete conversion of GO to graphene. However, this is not always the case.
- one or more of the amount, duration, intensity and wavelength(s) of irradiation is adjusted or tuned so as to cause only partial deoxygenation of the GO, but not complete conversion to graphene.
- the result may be the partial deoxygenation of the GO, or the substantially complete dexoygenation of GO, producing graphene.
- the deoxygenation of GO to graphene need not be an "all or nothing" event.
- substantially complete usually at least about 75%, 80%, 85%, 90%, 95%, 99%, or even up to about 100% of the GO is converted to graphene.
- the graphene is produced using lasers, and what is produced is thus termed “laser converted graphene” or “LCG”.
- laser converted graphene or “LCG”.
- individual (single) LCG sheets are produced by laser reduction of exfoliated GO in water, and the reaction is carried out under ambient conditions (e.g. at room temperature, which is about 20-25°C).
- the progress of the reaction may be monitored by any suitable method, examples of which include but are not limited to UV-VIS spectral data, FTIR, Raman spectroscopy, etc.
- the source of radiation is withdrawn or removed and the graphene sheets are removed from the reaction mixture.
- the solution may be centrifuged and the graphene separated after centrifuging, or the solution may be filtered to separate the graphene sheets, etc.
- the graphene may be rinsed (e.g. with water or another solvent, e.g. an alcohol), dried and stored for further use. Using solid GO
- the GO that is utilized to produce graphene is solid GO.
- metal powder or nanoparticles are mixed with GO to form a mixture that is, e.g. pressed into a pellet (cake, block, layer, sheet, etc.) using high pressure.
- the mixed pellet is then used for the laser desorption process as described above, and metal-graphene nanocomposites are formed.
- GO solid target is converted into graphene by the Laser Vaporization Controlled Condensation (LVCC) method as described in US patents 5, 580,655; 5,695,617; 6,136,156, 6,368,406 and 7,413,725, the complete contents of which are incorporated herein by reference.
- LVCC Laser Vaporization Controlled Condensation
- the graphene sheets produced by both the "in solution” and “solid GO” methods may be used in any of a variety of applications and as components of a variety of apparatuses, e.g. they may be used in nanoelectronics, supercapacitors, batteries, photovoltaics, LEDs, and related devices.
- the properties of graphene such as the high thermal, chemical, and mechanical stability as well as a high surface area, also represent desirable characteristics for its use as a 2-dimensional catalyst support for metallic and bimetallic nanoparticles.
- the invention also provides methods for producing graphene sheets which support one or more metal atoms, e.g. for use in catalyzing a variety of chemical reactions and transformation, particularly at high temperature.
- the main advantage of using the photochemical and photothermal reduction methods described herein to prepare metal nanoparticles supported on graphene is to avoid the use of toxic chemical reducing agents and thus provide a green approach for the synthesis and processing of metal-graphene nanocomposites.
- the absence of traces of reducing or capping agents from the surface of the supported nanocatalysts is advantageous.
- the present methods provide better control of the reduction processes without the need of high temperatures, and the possibility of the facile simultaneous reduction of two or more different metal ions on the graphene surface which could produce graphene nanocomposites with desirable catalytic, magnetic and optical properties.
- metal-graphene nanocomposites may be carried out using either GO dispersed in a liquid medium or solid GO. Generally, the overall procedure is the same as that which is described above for the production of graphene. However, in this embodiment, what is irradiated is a mixture of GO plus at least one metal of interest.
- soluble metal salts are used.
- metal powder or nanoparticles are mixed with GO to form a mixture that is, e.g. pressed into a pellet using high pressure pellet production.
- the mixed pellet is then used for the laser desorption process as described above for the LVCC method.
- metal ions upon exposure to light energy as described herein, simultaneous reduction of the GO and metal ions takes place and metal-graphene nanocomposites are formed.
- metals examples include but are not limited to Pd, Co, Au, Ag, Cu, Pt, Ni, Fe, Mn, Cr, V, Ti, Sc, etc and rare earth metals such as Ce, Pr, Nd, Sm, Gd, Horn Er, Yb, etc., and other metals such as Al, Ga, Sn, Pb, In, Mg, Ca, Sr, Na, , Rb, Cs, etc.
- semiconductors can be used such as Si, Ge, CdSe, CdS, CdTe, ZnO, ZnS, ZnSe, etc.
- the metals are provided as salts, i.e.
- the resulting catalyst is bi-metallic (or tri- metallic, etc., depending on how many metals are present).
- metals include but are not limited to: Pd plus Co; Au plus Ag, Pd plus Pt, Cu plus Pd, Pt plus Fe, etc.
- the metals in the mixture that is irradiated are generally in the form of e.g. metal salts, and the concentration of the metal ions is generally in the range of from about 1 % to about 20-30 %, depending on, for example, the desired density of metal on the graphene sheet that is formed.
- Metal catalysts supported on graphene sheets made according to the methods described herein may be used for any of a variety of purposes, including but not limited to catalysis, e.g. for use in Fischer-Tropsch Synthesis, hydrogen production reactions, CO oxidation, etc., as well as for sensors, hydrogen storage, energy conversion, and for other applications.
- catalysis e.g. for use in Fischer-Tropsch Synthesis, hydrogen production reactions, CO oxidation, etc.
- sensors e.g. for sensors, hydrogen storage, energy conversion, and for other applications.
- semiconductor materials mixed with and irradiated with the GO and graphene sheets with associated semiconductor particles are formed.
- examples of such substances include but are not limited to silicon, titanium and zinc oxides, CdSe, ZnS, CdS, etc.
- the conditions for carrying out such reactions are generally the same as those for the simultaneous reduction of GO and metal ions as described above.
- Si silicon
- the concentration of Si in the mixture that is irradiated is generally from about 1% to about 20%, and the Si is generally in the form of Silicon powder or Si nanoparticles. Similar concentrations are used for the other semiconductor materials. Further, in some embodiment, silicon, titanium and zinc oxides, CdSe, ZnS, CdS, etc.
- the conditions for carrying out such reactions are generally the same as those for the simultaneous reduction of GO and metal ions as described above.
- the concentration of Si in the mixture that is irradiated is generally from about 1% to about 20%, and the Si is generally in the form of Silicon powder or Si nanoparticles. Similar
- semiconductor materials may be reduced together with GO and one or more metals of interest as described above.
- the invention provides a method for the very high efficiency conversion of visible, infrared and ultraviolet radiation into thermal energy, i.e. heat.
- graphite oxide and graphene as well as their metal and semiconductor nanocomposites are exposed to light energy, and, as a result, heat is produced via a photothermal coupling reaction.
- the invention provides methods and apparatuses for generating heat by this method.
- the materials that are used in this embodiment of the invention include but are not limited to GO, graphene, and metal and semiconductor nanocomposites of GO and graphene.
- Exemplary metal and semiconductor nanocomposites of GO and graphene include but are not limited to those formed with gold, silver, palladium, copper, platinum, silicon, titanium dioxide, zinc oxide, etc. These materials may be referred to herein as "GO, graphene and nanocomposites thereof or as "photothermal ly active materials", etc.
- This embodiment of the invention has applications in a wide variety of scenarios, including but not limited to phototherapy in the medical field, for the production of heat in general, e.g. for domestic purposes, and for desalination of water. Each of these exemplary uses is discussed below.
- the method involves: 1 ) identification of a patient or subject in need of phototherapy (e.g. a subject with unwanted cells or tissues such as hyperproliferating cells of tissues (e.g. cancerous tumors, etc.); 2) identification of one or more locations within or on the body of the patient where the application of heat would be beneficial (e.g. in the environs of a tumor); 3) placement of GO, graphene and/or one or more nanocomposites thereof at the identified location(s) where it is desired to produce heat (e.g.
- irradiation of the GO, graphene and/or one or more nanocomposites with a suitable wavelength of electromagnetic radiation causes the generation of intense heat at the targeted area, and the targeted, unwanted cells or tissues at or in the vicinity of the targeted area are harmed or destroyed (killed).
- irradiation is carried out only once whereas in other embodiments, irradiation is carried out repeatedly at spaced-apart intervals, i.e. the targeted area is subjected to repeated cycles of radiation.
- the amount of GO, graphene and/or one or more nanocomposites at the irradiated (targeted) site(s) may be varied or adjusted so as to influence the amount of heat that is generated, thus lending a high level of flexibility to the method.
- the amount of heat that is generated at any given time or site can be modulated in a flexible manner, e.g. increased or reduced, as required or desired, by varying one or both of 1) the amount of GO, graphene and/or one or more nanocomposites at the irradiated site; and 2) the frequency, duration, intensity, and particular wavelengths of radiation that are used.
- a laser is used as the radiation source.
- a laser it is possible to narrowly focus the radiation, pinpoint the targeted area, and avoid irradiating surrounding tissue.
- Those of skill in the art will recognize that the use of lasers for phototherapy or similar purposes in known.
- the phototherapy can be carried out much more rapidly and efficiently, and even areas that are otherwise difficult to access may be targeted.
- Exemplary uses for this aspect of the technology include but are not limited to applications in phototherapy (e.g. for the treatment of cancer; treatment of macular degeneration; etc.); as well as for the destruction or removal of: unwanted fatty deposits (e.g. in arteries) or fatty tissue (e.g. for cosmetic surgery); unwanted pigments, hair follicles, diseased or dead tissue, hyperproliferating cells or tissue, etc.
- the heat generating properties of the invention are used for applications in which the heat that is generated from the reaction is captured or conserved and then used for heating on a large scale, e.g. for domestic or commercial heating.
- one or more of the materials described herein are incorporated into an apparatus in a manner that permits or facilitates exposure of the material to a source of light energy.
- the source of light energy is sunlight, although this is not always the case.
- the material that is exposed to light energy is generally in the form of a suspension of the material in a medium that absorbs or captures the heat (e.g.
- the medium is moved or circulated to an environment that is to be heated via transfer of the heat from the medium to the environment.
- the graphene material may be in the form of a sheet which is submerged in or coated with e.g. a liquid medium.
- the graphene materials can be used repeatedly and/or regenerated for repeated uses without degradation or loss of efficiency.
- This embodiment of the invention may be implemented in such apparatuses as e.g. hot water or steam heating systems (e.g. boilers), and the like.
- Figure 22 shows a schematic depiction of an exemplary embodiment of this type.
- container 100 contains heatable medium 1 10 (e.g. water, other liquid medium, air, etc.) and photothermally active material 120 (GO, partially reduced GO, graphene and/or one or more nanocomposites thereof).
- Incident light 130 e.g. sunlight
- Surrounding heatable medium 1 10 is heated and transported via conduit 140 to a location where the heat is released from heated medium 160, e.g. to destination such as dwelling 150, where heated medium 160 circulates and releases heat.
- the heat (and/or optionally light) that is produced is used directly, e.g. to heat homes or dwellings, e.g. for humans or other life forms that do not thrive in or are generally adverse to the cold.
- dwellings may be conventional (e.g. houses, dormitories, buildings for livestock or other animals, etc.) or for heating greenhouses or orchards (e.g. to prevent the loss of crops such as citrus crops during a freeze), for desalination (discussed below), etc.
- Heating units employing the technology of the invention may be "built-in" to a structure, or may be portable (mobile). Other less conventional applications may occur to those of skill in the art, e.g.
- the photothermal cells or arrays may be activated by exposure to an alternative light source, e.g. laser, tungsten-halogen lamp, etc.
- the heat that is generated as described herein may be used, e.g. to heat substances (e.g. liquids) such as water for any use (e.g. in homes, recreational facilities, business, etc.) or to create steam for heating, or for the generation of electricity (e.g. via a steam turbine connected to an electrical power generator), etc.
- heat substances e.g. liquids
- FIG 23 shows container 200 which contains medium 210 (e.g. water) and photothermally active material 220 (GO, partially reduced GO, graphene and/or one or more nanocomposites thereof), incident light 230 (e.g.
- the methods and apparatuses have application in manufacturing, where the heat may be used to drive chemical reactions for the synthesis of various products (e.g. by heating the reaction components or the medium in which the reaction is carried out, by creating steam, etc.
- the materials used to generate heat in this manner can be regenerated after several cycles of exposure to light energy, and then reused with high efficiency. Regeneration is accomplished e.g. by washing, filtration or centrifuging if necessary and/or by re-oxidizing the graphene or graphene nanocomposite, etc.
- This method of heat generation can be applied for other purposes as well, e.g. those where the targeted generation of heat at a distance is desired or advantageous.
- photothermal reactive material placed in an explosive device can be irradiated from a distance (e.g. with a laser), causing detonation of the device from a distance.
- a distance e.g. with a laser
- Examples of this application include but are not limited to uses by the military during warfare, in excavations, or during construction and mining where the removal of earth or rock, etc, is required, etc.
- the materials and methods of the invention may be used in a variety of scenarios where it is desirable to produce heat above and beyond that which is supplied by exposure to sunlight.
- the photothermally active materials as described herein may be used in any of a variety of forms, e.g. as particles, sheets, discs, etc, or as coatings or paints, or other wise attached to or incorporated into an item.
- the materials described herein may be used to replace e.g. carbon black in various applications such as those described in US patents 6,508,247; 6,827,772; 7,255,134; and 7,820,865, the complete contents of each of which are herein incorporated by reference.
- graphene polymer composites may be used to coat or otherwise be incorporated into materials used for building or heating swimming pools, aquaria, algae ponds, etc. (e.g. pipes, floating, removable, or stationary panels; liners; cement; concrete; tiles; etc.).
- the materials may be advantageously incorporated into building materials (e.g. roofing, siding, materials for banking a building during winter, etc.).
- the materials may have applications for use in fabric or clothing (e.g. cold weather footwear, jackets, sweaters, hats, etc. or in items intended for emergency e.g. blankets); in materials for use in accelerating the removal or melting of snow and ice, e.g.
- tarps or sheets of materials that can be placed on e.g. a sidewalk, or placed on or incorporated into a vehicle, especially a vehicle that is primarily used during cold conditions; or used to protect trees or crops during a freeze; or for use in camping material, e.g. tents, sleeping bags, etc.; or in cooking materials (e.g. pots) or in stoves or ovens, particularly in areas where sources of fuel are scarce; or even for novelty items to cause an increase in heat that is surprisingly out of proportion to incident sunlight.
- the materials of the invention may be used in any circumstance where sunlight is available and where it is desired to efficiently provide photothermal heating.
- suitable wavelengths of radiant energy may also be supplied by other sources (lamps, flashlights, laser sources, etc. as described herein).
- suitable sources lamps, flashlights, laser sources, etc. as described herein.
- efficient photothermally induced heating can be provided in any environment even in the absence of sunlight.
- the interiors of buildings walls, floors, ceilings, etc.
- covers for foods may be made from or coated with photothermally active materials and heated when exposed to one or more suitable wavelengths of radiation.
- the photothermally active materials as described herein may be used in any of a variety of forms, e.g. as particles, sheets, discs, etc, or as coatings or paints, or other wise attached to or incorporated into an item, so long as they are positioned or located so as to provide heat in a suitable manner.
- particles of the materials may be mixed with water (e.g. in a swimming pool), and optionally, agitated to distribute the particles; or materials which make up the pool may be coated with photothermally active materials, etc.
- the latter approach may have advantages in that particulate material may be more difficult to remove if required, e.g. to clean the system.
- the heat-generating capability of the technology is used in the process of desalination, i.e. for the removal of salts and other minerals from water that contains unacceptably high levels of these substances.
- the technology is used for the desalination of sea water in order to produce desalinated water that is suitable for consumption (e.g. by humans, livestock, etc.) and/or for irrigation.
- the technology is especially well adapted to geographical locations which have ample sunshine but where there is a scarcity of sources of fresh water.
- the photothermally active materials as described herein may be used in any of a variety of forms, e.g.
- particles of the materials may be mixed with sea water, and optionally, agitated to distribute the particles; or a container in which sea water is present may be coated with the photothermally active materials, etc.
- the latter approach may have advantages in that particulate material may be more difficult to remove if required, e.g. to clean the system.
- the heat produced by the methods described herein is used to heat water which contains unwanted materials (e.g. salts, minerals, chemicals, etc., for example, sea water, brackish water, water discharged from manufacturing facilities, water contaminated with feces or microbes, etc.) sufficiently to cause evaporation of water vapor, leaving behind the salts, minerals and/or contaminants.
- the water vapor is captured and condensed to produce "fresh" water.
- the methods of the invention are used to heat the water to at least from about 70 to about 80 °C, and then a second energy source is used to supply further heating. This embodiment still provides significant energy savings by decreasing the amount of heat required from the second energy source.
- water vapor produced by this method is used as a source of humidity e.g. to produce humidified air, instead of or in addition to producing water.
- the method also provides apparatuses capable of carrying out these reactions.
- Such an apparatus comprises at least: means (e.g. a container) for containing at least one photothermally active material of the invention (GO, graphene and/or metal or semiconductor nanocomposites thereof) and water which contains salt and/or unwanted minerals or chemicals; means for irradiating the combined material and water (if artificial sources of light energy are used) or means for allowing exposure of the water to natural sunlight (e.g.
- the salt and/or mineral laden water may not come into direct contact with the photothermally active material, but may be heated indirectly by transfer of heat from another liquid that is heated by the photothermal energy conversion.
- FIG. 24 An exemplary desalination apparatus is depicted in Figure 24.
- container 300 contains e.g. seawater 310 and photothermally active material 320.
- Incident light energy (e.g. sunlight) 330 falls on photothermally active material 320, which produces heat, thereby heating seawater 310.
- Water vapor (represented by arrow 380) is created and transported by optional conduit 340 to condenser 350, which condenses the water vapor.
- Receptacle 360 receives (catches, contains, etc.) condensed fresh water 370.
- some elements of the apparatus are optional or may be combined, e.g.
- condenser 350 may be located within or part of conduit 340, or condenser 350 may be located in or part of receptacle 360, etc.
- Various other conduits, valves, pipes etc. may be employed in the apparatus, and any or all of these components may also be coated with or have incorporated therein the photothermally active materia! described herein, e.g. a GO or graphene-polymer composition may be used to coat or manufacture pipes.
- the materials of the invention are employed in solar humidification-dehuniidification (HDH) methods for thermal water desalination.
- HDH is based on evaporation of sea water or brackish water and consecutive condensation of the generated humid air, mostly at ambient pressure, thereby mimicking the natural water cycle, but over a much shorter time frame.
- the simplest configuration is implemented as a solar still, evaporating the sea water inside a glass or other suitable polymer covered container, and condensing the water vapor on the lower side of the cover, from which it is captured. More sophisticated designs separate the solar heat gain section from the evaporation- condensation chamber.
- An exemplary optimized design may comprise separated evaporation and condensation sections.
- MEH multiple-effect humidification
- the graphene and graphene nanocom osites produced by the methods of the invention also have applications for the production of electricity and light, and the invention also provides methods and apparatuses for the production of electricity and/or light.
- FIG. 20 A schematic of an exemplary photovoltaic cell of the invention is depicted in Figure 20. This figure shows transparent conducting layer 10, photoabsorber 20 and back electrode 30, one or more of which incorporates one or more graphene or graphene-metal or graphene-semiconductor composites produced as described herein.
- Transparent conducting layer 10 is generally a glass or polymer substrate into or onto which the materials of the invention (e.g. a graphene monolayer or graphene-metal monolayer made by the methods described herein) may be loaded or positioned.
- Graphene monolayer fabricated as described herein are both transparent and conductive, and may replace indium tin oxide (ITO)-coatings which can be extremely problematic, suffering from price volatility, sustained high cost, and limited worldwide availability.
- Photoabsorber 20 further comprises, for example, a graphene-semiconductor nanocomposite made as described herein.
- Back electrode 30 generally comprises graphene (typically a graphene monolayer produced as described herein) and/or metallic ink.
- such cells or arrays of such cells are arranged in suitable locations such as on rooftops or areas exposed to sunlight without interference (e.g. open lands).
- suitable locations such as on rooftops or areas exposed to sunlight without interference (e.g. open lands).
- many other configurations may also be employed, including portable versions of the cells or arrays.
- the invention provides LEDs comprising a substrate (e.g. a chip), and a semiconductor nanocomposite of graphene associated with the substrate.
- the LEDs are made by the methods and processes described herein fore the generation of graphene from GO.
- the semiconductor nanocomposite of graphene is doped with impurities to create one or more p- n junctions (positive-negative junctions) on the substrate.
- p-side anode
- n-side cathode
- Charge-carriers i.e.
- An exemplary LED 300 is depicted in Figure 25, which shows substrate 410 with associated graphene layer 420 (e.g. a semiconductor nanocomposite of graphene) having associated semiconductor nanoparticles 430, and doped with impurities 3440.
- substrate 410 with associated graphene layer 420 e.g. a semiconductor nanocomposite of graphene
- associated semiconductor nanoparticles 430 e.g. a semiconductor nanocomposite of graphene
- a single device may be fabricated which advantageously produces both heat and light.
- This example describes the development of a facile laser reduction method for the synthesis of laser converted graphene (LCG).
- the method provides a solution processable synthesis of individual graphene sheets in water under ambient conditions without the use of any chemical reducing agent.
- the XRD pattern of the exfoliated GO is characterized by a peak at 2 ⁇ 10.9 with a larger d-spacing of 8.14 A (compared with the typical value of 3.34 A in graphite) resulting from the insertion of hydroxy! and epoxy groups between the carbon sheets and the carboxyl groups along the terminal and lateral sides of the sheets as a result of the oxidation process of graphite.
- the irradiation time required for the deoxygenation of GO using the 532 or the 355 nm lasers varies from a few to several minutes depending on the laser power, the concentration of GO, and the volume of the solution.
- Experiments using the fundamental of the YAG laser (1064 nm, 30Hz, 5W) resulted in a rapid partial
- NLO nonlinear optical
- OL optical limiting
- Figure 3 A compares the FT-IR spectra of GO and the LCG.
- the XPS data of the LCG clearly indicate that most of the oxygen-containing groups in GO are removed after the 532 nm laser irradiation of GO in water (Figure 3B).
- the Raman spectra of the prepared GO and LCG are shown in Figure 3C.
- the spectrum of the exfoliated GO shows a broadened and blue-shifted G-band (1594 cm “1 ) and the D-band with small intensity at 1354 cm-1 (as compared with graphite).
- the spectrum of the LCG shows a strong G-band around 1572 cm “1 , almost at the same frequency as that of graphite with a small shoulder, identified as the DO-band around 1612 cm “1 , and a weak D- band around 1345 cm " ' .
- the D-band and the DO-shoulder have been attributed to structural disorder at defect sites and finite size effects, respectively.
- TEM images of the LCG sheets show wrinkled and partially folded sheets with a lateral dimension of up to a few micrometers in length.
- AFM images with cross- section analysis show that most of the flakes consist of a single graphene sheet.
- the vertical heights of the sheet at different lateral locations were determined to be 0.99, 1.03, and 1.02 nm. This is consistent with the reported AFM results on graphene, where the single layer graphene is ⁇ 1 nm.
- the shorter excitation wavelength of 355 nm is strongly absorbed and good for heating the GO surface, but the GO solution bleaches out at higher laser power and longer irradiation times (>5 W, 30 Hz, and >6 min). This indicates that the 532 nm irradiation is more efficient for obtaining rapid photothermal energy conversion by GO in water. It is important to note that in the case of the IR irradiation, the increase in the temperature of the GO solution is mainly due the absorption of the IR photons by water.
- the advantage of the 532 nm (or the 355 nm) irradiation is that it efficiently converts GO to the more thermally and chemically stable graphene with integrated electronic conjugation. Because of the stability of graphene and its stronger NLO and OL properties as compared with GO, 5 repeated irradiation cycles can be performed with no loss of photothermal conversion efficiency (not shown).We were able to repeat the heating (laser on) and cooling (laser off) cycles reproducibly over seven cycles with almost the same temperature profiles (not shown). The temperature of the solution returns to room temperature after the laser is turned off at almost the same rate as heating occurs during laser irradiation.
- the photothermal energy conversion of the LCG (second irradiation cycle of GO) appears to be similar to that of CCG prepared by the hydrazine hydrate reduction of GO.
- These results demonstrate the very high stability of the LCG as a potential photothermal converter for a variety of applications that require fast and efficient temperature rise.
- the first application of graphene composites in photothermal therapy has been reported very recently. 1 1
- the laser reduction of GO in water, the accompanied significant temperature rise of water, and the repeated cycles of laser heating of the LCG have not been demonstrated prior to this work. It is reasonable to speculate that the demonstration of efficient photothermal energy conversion by GO and graphene would trigger several other applications in addition to photothermal therapy.
- the observed temperature rise reflects the steady-state net heat transfer from the LCG to water following the deoxygenation of GO by photothermal energy conversion.
- the suggested mechanism involves the absorption of the photon energy at 532 or 355 nm by GO resulting in the formation of a heated electron gas that subsequently cools rapidly (picosecond time scale) by exchanging energy with the GO lattice. 8,9
- nanosecond pulse lasers are suitable for thermal confinement of absorbed energy. 8 ' 9
- the computed temperatures from pulse laser heating can be on the order of several thousand degrees. 9
- the laser energy will be dissipated to the surroundings, and a steady state will be reached.
- GO was prepared by the oxidation of high purity graphite powder (99.9999%, 200 mesh, Alfa Aesar) according to the method of Hummers and Offeman. 10 After repeated washing of the resulting yellowish-brown cake with hot water, the powder was dried at room temperature under vacuum overnight. Dried GO (2 mg) was sonicated in 10 mL of deionized water until a homogeneous yellow dispersion was obtained.
- the temperature of the solution was monitored during the laser irradiation using a thermocouple immersed in the solution.
- the LCG sheets were separated and dried overnight under vacuum before the XRD, Raman, IR, and XPS measurements.
- X'Pert Philips Materials Research diffractometer using Cu KRl radiation.
- the XPS analysis was performed on a Thermo Fisher Scientific ESCALAB 250 using a monochromatic Al KR.
- Absorption spectra were recorded using a Hewlett- Packard HP-8453 diode array spectrophotometer.
- FT-IR spectra a KBr (IR grade) disk containing either GO or LCG was prepared and scanned from 4000 to 500 cm "1 using the Nicolet 6700 FT-IR system under transmission mode.
- the Raman spectra were measured using an excitation wavelength of 457.9 nm provided by a Spectra-Physics model 2025 argon ion laser.
- the laser beam was focused to a 0.10 mm diameter spot on the sample with a laser power of lmW.
- the samples were pressed into a depression at the end of a 3 mm diameter stainless steel rod held at a 30° angle in the path of the laser beam.
- the detector was a Princeton Instruments 1340 400 liquid nitrogen CCD detector attached to a Spexmodel 1870 0.5m single spectrograph with interchangeable 1200 and 600 lines/mm holographic gratings (Jobin-Yvon).
- the Raman scattered light was collected by a Canon 50mmf/0.95 camera lens.
- the holographic gratings provided high discrimination, Schott and Corning glass cutoff filters were used to provide additional filtering of reflected laser light, when necessary.
- GO was prepared by the oxidation of high purity graphite powder (99.9999%, 200 mesh, Alfa Aesar) according to the method of Hummers and Offeman. 8 After repeated washing of the resulting yellowish-brown cake with hot water, the powder was dried at room temperature under vacuum overnight. 2 mg of the dried GO was sonicated in 10 mL of deionized water (or 50% ethanol-water or 2% PEG-water mixture) until a homogeneous yellow dispersion was obtained.
- deionized water or 50% ethanol-water or 2% PEG-water mixture
- the tungsten-halogen lamp used was 500 W.
- the distance between center of the sample and light source was 35 cm and no filters were used.
- the temperature of the solution was monitored during irradiation using a thermocouple immersed in the solution.
- the LCG sheets and the metal-LCG nanocomposites were separated and dried overnight under vacuum before the XRD or the XPS measurements.
- TEM images were obtained using a Joel JEM-1230 electron microscope operated at 120 kV equipped with a Gatan UltraScan 4000SP 4K x 4K CCD camera. Absorption spectra were recorded using a Hewlett-Packard HP-8453 diode array spectrophotometer. The X-ray diffraction patterns were measured with an X'Pert Philips Materials Research Diffractometer using Cu Kal radiation. The X-ray photoelectron spectroscopy (XPS) analysis was performed on a Thermo Fisher Scientific ESCALAB 250 using a monochromatic Al KR.
- XPS X-ray photoelectron spectroscopy
- XRD data of the LCG obtained after the 532 nm (4 W, 30 Hz) irradiation of GO for 10 min in different solvents was obtained.
- the yellow golden color of the GO solution changes to black with complete disappearance of the XRD 10.9° peak ( Figure 5), thus indicating the reduction of GO and the restoration of the sp 2 carbon sites in the LCG.
- the irradiation time required for the reduction of GO varies from a few to several minutes depending on the nature of the solvent, the laser power, the concentration of GO and the volume of the solution. For example, under identical conditions of GO concentration (0.2 mg/mL), solution volume (3 mL) and laser power (4 W, 30 Hz), the reduction of GO is completed after 5, 8, and 10 min in 50% ethanol-water, 2% PEG- water and pure water, respectively.
- two photon absorption is expected to contribute significantly to the absorption of the laser energy by GO due to excited state nonlinearties which enhance the two-photon absorption of GO at 532 nm in the nanosecond regime.
- UV-Vis spectra of GO following the 532 nm laser irradiation in 50% ethanol-water and 2 % PEG-water mixtures, and in pure water showed that, in all cases, the characteristic shoulder of GO at 305 nm disappears after laser irradiation, and the absorption peak of GO at 230 nm redshifts to about 270 nm due to the ⁇ * transitions of extended aromatic C-C bonds as the electronic conjugation within graphene is restored in the LCG.
- the XPS data of the LCG in 50% ethanol-water, 2 % PEG-water, and pure water clearly indicate that most of the oxygen-containing groups in GO are removed after the laser irradiation.
- the TEM images of the reduced GO showed wrinkled and partially folded sheets with a lateral dimension of up to a few microns in length. No obvious differences were observed in the TEM images of the LCG in different solvent environments.
- the reduction of GO in the presence of ethanol or PEG is much faster than in pure water under identical solution volume, concentration and laser power conditions.
- 532 nm irradiation with 1 W laser power (30 Hz) converts GO in pure water into graphene in about 40 min (7.2 x 10 3 laser pulses), while in the presence of 50% ethanol or 2% PEG, the same concentration of GO can be reduced in about 22, or 32 min, respectively.
- the ethanol and PEG solutions exhibit higher reduction efficiencies than pure water. Without being bound by theory, this is attributed to the role of ethanol or PEG in scavenging the holes generated by the laser irradiation of GO.
- Figure 6A compares the absorption spectra of GO solutions containing the same amount of HAuC in 50% ethanol-water and 2% PEG-water mixtures and in pure water before and after the 532 nm irradiation (4 W, 30 Hz) for 2 min.
- the reduction of the gold ions and formation of Au nanoparticles is clearly evident by the observation of the Surface Plasmon Resonance (SPR) band of Au nanoparticles (527-531 nm) as shown. It is clear that laser excitation of GO is involved in the reduction of the Au ions since irradiation of the HAuCU solutions in the absence of GO under identical conditions does not result in the formation of Au nanoparticles (Figure 5).
- SPR Surface Plasmon Resonance
- the SPR band shifts from 531 nm after 2 min irradiation to 548 nm after 6 min irradiation of GO in the 50% ethanol-water mixture (not shown).
- the SPR band shifts from 535 nm to 558 nm after 2 min and 10 min irradiation times, respectively of GO in the 2% PEG-water mixture (not shown).
- the redshift in the SPR band is attributed to the formation of large aggregated Au nanoparticles as confirmed by the TEM images showing the presence of particles in the size range of 30-70 nm after 10 min irradiation (not shown).
- These large particles are formed via an Ostwald ripening process where the initially formed small particles with higher surface energies are consumed in the growth of the large particles with lower surface energies at longer irradiation times.
- Selective formation of small Au nanoparticles can be achieved by decreasing the concentration of HAuC and using shorter irradiation times where the Ostwald ripening process can be minimized.
- the increase in the SPR band intensity of the Au nanoparticles for the 50 % ethanol and the 2 %PEG solutions as compared to pure water is attributed to increasing the concentration of the Au nanoparticles in the presence of ethanol or PEG consistent with the increased reduction efficiencies of these solutions over pure water.
- the reduction of the Au ions is not observed in pure water as indicated by the absence of the SPR band of Au nanoparticles as shown in Figure 6B. This suggests that the laser reduction mechanism is different in water than in the presence of alcohol or PEG.
- TEM images were obtained of the Au nanoparticles dispersed on the surface of the LCG graphene sheets formed by the 2 min laser irradiation of the GO solutions containing the same amount of HAuCl 4 in 50% ethanol- water and 2% PEG-water mixtures and in pure water. From the images, it was clear that the concentration of the Au nanoparticles formed in the GO-water solution is significantly lower than the concentration formed in the presence of ethanol or PEG. Again, this is likely a consequence of the favorable reducing environment created by ethanol or PEG as compared to water.
- irradiation of GO in water in the presence of HAuCU shows that a small GO peak remains in the XRD suggesting that only a partial reduction of GO takes place.
- the XRD pattern of Au is clearly observed in the resulting Au-LCG nanocomposites formed by laser irradiation of the GO solutions containing the same amount of HAuCU as shown in Figure 7B.
- the partial reduction of GO in the presence of the Au ions is attributed to the formation of Au nanoparticles which efficiently absorb the 532 nm photons due to the SPR (-530 nm) thus decreasing the probability of two-photon absorption by GO.
- This will result in decreasing both the number of the photogenerated electrons needed for the reduction of GO as well as the photothermal energy conversion resulting from the nonradiative recombination of the electron-hole pairs.
- the temperature rise reflects the steady state net heat transfer to the solution following the nonradiative recombination of the e-h pairs in GO. It is clear that laser irradiation of the metal ions' solutions in the absence of GO does not show any significant temperature rise under identical conditions as shown in Figure 10. Therefore, it can be concluded that the temperature rise of the GO solutions containing metal ions following the 532 nm irradiation is mainly due to the photothermal energy conversion by GO and the LCG. Also, the SPR bands of Au and Ag are not observed in the UV-Vis spectra of the laser irradiated HAuC14 and AgNOj solutions in the absence of GO.
- the reduction of the metal ions appears to be coupled to the absorption of the 532 nm photons by GO and the subsequent photogenerated electron or photothermal reduction processes depending on the nature of the solvent.
- a decrease in the temperature rise of the GO solution containing metal ions is observed as compared to the GO solution without the metal ions as shown in Figure 10. Similar trends have been observed for the Au and Ag ions in the GO solutions of 2% PEG- water and pure water (not shown). It is reasonable to assume that the decrease in the temperature rise of the irradiated solution in the presence of GO-metal ions mixture is qualitatively related to the contribution of the photothermal effects to the reduction mechanism of the metal ions and GO.
- the energy required for reduction of the metal ions is provided by the photothermal energy conversion of GO and therefore the net amount of heat transferred to the solution is decreased.
- the photothermal effects appear to be similar in 50% ethanol-water, 2% PEG-water and in pure water, the enhancement of the reduction of GO and metal ions in ethanol and PEG is most likely due to hole scavenging properties of these solvents which leave the photogenerated electrons available for the reduction of the metal ions and GO.
- Figure 11 A shows the temperature profiles of repeated irradiation cycles of the HAuCU-GO solution using a 2 W average laser power. After each cycle, the solution was cooled down before starting the next irradiation cycle. In the 7 th cycle, irradiation starts when the temperature of the solution was 36 °C and it became 47 °C after irradiation for 10 min. Then the solution was cooled down to room temperature and the S th cycle started for 10 min where the temperature reached only 41 °C, and the solution color changes to dark blue. This suggests that the drop in temperature is associated with the formation of large aggregated Au nanoparticles.
- the reduction of the Au ions is much more efficient and faster in the presence of ethanol consistent with the 532 nm laser irradiation results. Therefore, the main features of the photocatalytic reduction of GO and metal ions observed using pulse laser irradiation are reproduced by using the tungsten-halogen lamp. This demonstrates the possibility of using solar energy for the photoreduction of metal ions-GO mixtures and the formation of metal-graphene nanocomposites.
- the reduction mechanism of the metal ions probably involves the participation of electrons from the LCG or the partially reduced GO.
- GO as a semiconductor absorbs either two photons of 532 nm or one photon of 355 nm resulting in the creation of an e " -h+ pair.
- the holes are scavenged to produce protons and reducing organic radicals.
- the electrons are used for the reduction of the metal ions, and since the alcohol radicals ( C2H4OH) are strong reducing agents they undergo oxidation to CH3CHO and therefore reduce GO.
- the present approach leads to the formation of metal nanocrystals dispersed on the reduced or partially reduced GO surfaces without the use of chemical reducing or capping agents which tend to significantly reduce the catalytic activity and poison the nanoparticle catalysts.
- the observed photothermal effects leading to a significant increase in the temperature of the solution suggests that metal-graphene nanocomposites could be promising materials for the efficient conversion of solar energy into usable heat for a variety of thermal, thermochemical and thermomechanical applications.
- EXAMPLE 3 Photothermal Energy Conversion by Metal and Semiconductor Nanoparticle Composites of Graphite Oxide and Graphene in Water Using Lasers and Tungsten-Halogen Lamps
- This Example describes a method for the conversion of sunlight and other visible, infrared and ultraviolet radiation into thermal energy which can be used for heating water for domestic use as well as for the evaporation of sea water for efficient desalination.
- the invention uses graphite oxide and graphene as well as their metal and semiconductor nanocomposites such gold nanoparticles-graphene oxide nanocomposites, gold
- nanoparticles-graphene nanocomposites, and silicon-graphite oxide, and silicon-graphene nanocomposites are silver, palladium, copper, and platinum.
- Other semiconductor nanoparticles used with graphite oxide and graphene are titanium dioxide and zinc oxide.
- Figure 15 shows the temperature increase in solutions of (a) pure water; (b), 1 ml Au particles + 9 ml water; (c) 10 ml of water with 1 mg of suspended GO; (d), 10 ml of water with 1 mg of suspended GO + 10 ⁇ of HAuC /HCl; (e) mixture contains 1 ml of gold spheres and 9 ml of GO mixture, in response to irradiation of the solutions with energy from a tungsten-halogen lamp (500 W).
- a tungsten-halogen lamp 500 W
- Figures 16A and B show the efficient coupling of photothermal energy conversion via laser irradiation of GO solutions containing silicon nanoparticles.
- Bimetallic PdCo nanoparticles supported on graphene are prepared by the laser irradiation process in solutions and the resulting PdCO nanoparticles exhibit higher catalytic activity for CO oxidation as compared to Pd/graphene and Co/graphene catalysts made from Pd nanoparticles or Co nanoparticles supported on graphene, as shown in the data presented in Figures 17A-C, 18A and B and 1 .
- Solar thermal technology has been used for centuries to provide water heating and/or steam for many purposes. The most common uses are: domestic water heating; and commercial applications in order to provide larger quantities of hot water for use in hotels, hospitals, and restaurants. Additional uses include solar crop drying technologies, basic solar stills to purify water in remote regions where contaminated water cannot be avoided, solar- driven desalination and solar thermal processed steam for industrial purposes. In the latter example, processed steam can be used for different industrial applications based on its ultimate temperature.
- a solar steam boiler can produce steam at temperatures up to 150 °C and can thus replace the low pressure steam boilers currently used in the textile, chemical, and food industries.
- a solar steam boiler comprises at least two or more containers for the solar heating of a medium such as air.
- An exterior side of an exemplary boiler structure that is exposed to incident solar radiation is usually either coated with a blackened heat absorbing material or is covered with absorber plates as "fins". These absorber plates are normally made of metals such as copper or aluminum and are usually painted with selective coatings that absorb and retain heat better than ordinary black paint.
- Metallic nanoparticles exhibit a very strong UV-VIS absorption band not present in the corresponding bulk spectrum. This absorption is due to the collective excitation of conduction electrons when particle sizes are smaller than the mean free path of carriers in these materials, an effect known as a localized surface plasmon resonance (LSPR).
- LSPR localized surface plasmon resonance
- one or more layers of metal nanoparticles are adsorbed onto thermally conductive graphene sheets and incorporated into the design of the solar stills and/or other apparatuses of the invention.
- the graphene-metal nanocomposites absorb sunlight with very high efficiency.
- graphene sheets coated with metal nanoparticles increase the boiler's overall efficiency and ultimately produce steam at temperatures over 260 °C.
- Incorporation of the graphene sheets may be accomplished by any of several methods, e.g. by attaching them to the photoabsorbing surface of the apparatus e.g.
- a suitable adhesive e.g. a photoabsorbing surface, the "fins” of a still, etc.
- a suitable surface e.g. a photoabsorbing surface, the "fins” of a still, etc.
- incorporating the graphene sheets into a photoabsorbing material when it is manufactured by adding particulate material directly to the water that is to be heated, etc.
- the general principle of solar desalination is based on the fact that glass and other like materials transmit incident short-wave solar radiation.
- this visible radiation is directed so as to pass through a glass cover and into a container of sea water, and the incident radiation heats the sea water.
- Wavelengths re-radiated from the surface of the heated water have infrared frequencies, and very little of the infrared energy is transmitted back through the glass. As a consequence, this infrared energy is trapped and heats the sea water even further.
- This style of desalination system is generally suitable for small production rates, the still's output rate per unit area being relatively small. For example, a prior art well-designed unit having a thermal efficiency of about 50% can produce -4.5 L/m 2 /day.
- the equipment is both simple to construct and operate with little or no electrical needs. This lends itself to use in remote areas. However, for large capacity plants very large tracts of land are needed in order to make the process worthwhile since capital, land and civil engineering costs are inevitably high.
- FIG. 21 A schematic of an exemplary solar still is depicted in Figure 21.
- Nanomaterials that can be used in water purification and desalination processes include metal and metal oxide nanoparticles as well as graphene and carbon nanotubes.
- a methodology which combines solar desalination and nanotechnology has been developed in our laboratory. This approach is based on producing low cost graphene/gold/silver nanoparticle composites for water desalination.
- the resulting structures absorb light strongly and convert excess energy into heat in an efficient manner.
- These new composite materials are added to sea water to dramatically enhance the rate of water evaporation upon exposure to sunlight. For example, using the technology provided herein, production rates of ⁇ 10 or more (e.g. 20-100) L/m 2 /day are attained.
- the materials may be added to the sea water as particles, or the container that contains the sea water may he coated with the materials, or panels or sheets of the materials may be placed in juxtaposition to the sea water and in a manner that exposes the materials to incident sunlight, or in any other manner that provides efficient exposure of the materials to the sunlight, and transmission of the heat that is generated into the seawater. Sufficient heat is produced to cause evaporation of the sea water, and production of water vapor, which then is condensed to fresh water.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- General Health & Medical Sciences (AREA)
- Biomedical Technology (AREA)
- Veterinary Medicine (AREA)
- Public Health (AREA)
- Animal Behavior & Ethology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Surgery (AREA)
- Inorganic Chemistry (AREA)
- Pathology (AREA)
- Radiology & Medical Imaging (AREA)
- Otolaryngology (AREA)
- Combustion & Propulsion (AREA)
- Biophysics (AREA)
- Composite Materials (AREA)
- Plasma & Fusion (AREA)
- Medicinal Chemistry (AREA)
- Epidemiology (AREA)
- Heart & Thoracic Surgery (AREA)
- Molecular Biology (AREA)
- Medical Informatics (AREA)
- Toxicology (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/514,671 US9768355B2 (en) | 2009-12-10 | 2010-12-10 | Production of graphene and nanoparticle catalysts supported on graphene using laser radiation |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US28527109P | 2009-12-10 | 2009-12-10 | |
US61/285,271 | 2009-12-10 | ||
US36581710P | 2010-07-20 | 2010-07-20 | |
US61/365,817 | 2010-07-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011072213A2 true WO2011072213A2 (fr) | 2011-06-16 |
WO2011072213A3 WO2011072213A3 (fr) | 2011-12-29 |
Family
ID=44146199
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2010/059870 WO2011072213A2 (fr) | 2009-12-10 | 2010-12-10 | Production de graphène et de catalyseurs nanoparticulaires supportés sur le graphène à l'aide d'un rayonnement laser |
Country Status (2)
Country | Link |
---|---|
US (1) | US9768355B2 (fr) |
WO (1) | WO2011072213A2 (fr) |
Cited By (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102290251A (zh) * | 2011-07-18 | 2011-12-21 | 艾荻环境技术(上海)有限公司 | 基于导电基底的光电还原制备石墨烯薄膜的方法 |
CN102304737A (zh) * | 2011-09-06 | 2012-01-04 | 天津大学 | 氧化锌/氧化石墨烯复合光开关材料及其电化学制备方法 |
CN102615290A (zh) * | 2011-12-12 | 2012-08-01 | 湖南理工学院 | 一种Ag/石墨烯纳米复合材料的制备方法 |
CN103055838A (zh) * | 2013-01-21 | 2013-04-24 | 武汉理工大学 | TiO2-rGO复合光催化剂的可见光光敏化制备方法 |
US20130180842A1 (en) * | 2012-01-18 | 2013-07-18 | Thomas Nelson Blanton | Method for reducing graphite oxide |
CN103273219A (zh) * | 2013-06-28 | 2013-09-04 | 深圳市富维德电子科技有限公司 | 一种锡银铜镍焊料及其制备方法 |
KR101367414B1 (ko) * | 2012-08-22 | 2014-02-27 | 도시바삼성스토리지테크놀러지코리아 주식회사 | 다수의 광 기록장치를 이용한 그래핀 제조 방법 및 장치 |
KR101374839B1 (ko) * | 2012-08-22 | 2014-03-19 | 도시바삼성스토리지테크놀러지코리아 주식회사 | 다수의 광 소자를 이용한 그래핀 제조 방법 및 장치, 광 기록장치 |
CN103738944A (zh) * | 2013-11-14 | 2014-04-23 | 盐城增材科技有限公司 | 一种通过纳米粒子掺杂制备三维石墨烯的方法 |
US20140239236A1 (en) * | 2012-01-18 | 2014-08-28 | Deepak Shukla | Method for reducing graphite oxide |
CN104401987A (zh) * | 2014-11-26 | 2015-03-11 | 东华大学 | 一种多孔石墨烯弹性泡沫的制备方法 |
CN104399090A (zh) * | 2014-11-12 | 2015-03-11 | 深圳先进技术研究院 | 一种聚多巴胺修饰的还原氧化石墨烯及其制备方法和应用 |
CN104842087A (zh) * | 2015-05-09 | 2015-08-19 | 芜湖鼎瀚再制造技术有限公司 | 一种Ni-Mn-Mo纳米焊层及其制备方法 |
US20160077074A1 (en) * | 2011-12-21 | 2016-03-17 | The Regents Of The University Of California | Interconnected corrugated carbon-based network |
CN105597763A (zh) * | 2015-12-21 | 2016-05-25 | 天津工业大学 | 磁性石墨烯基氧化锌复合材料的制备方法 |
CN105645459A (zh) * | 2016-01-15 | 2016-06-08 | 长沙理工大学 | 一种表面修饰海胆状ZnO/TiO2复合材料及其制备方法 |
CN105905988A (zh) * | 2016-05-25 | 2016-08-31 | 安徽普氏生态环境工程有限公司 | 一种基于可见光催化-电催化空气氧化降解污水cod的方法 |
CN106111207A (zh) * | 2016-06-27 | 2016-11-16 | 镇江市高等专科学校 | 一种有机金属框架/纳米二氧化锡/石墨烯复合光催化材料及其制备方法和用途 |
EP3121008A1 (fr) | 2015-07-23 | 2017-01-25 | Agfa Graphics Nv | Précurseur de plaque d'impression lithographique comprenant de l'oxyde de graphite |
WO2017013058A1 (fr) * | 2015-07-23 | 2017-01-26 | Agfa Graphics Nv | Composition comprenant de l'oxyde de graphite et un composé absorbant le rayonnement infrarouge |
CN106902350A (zh) * | 2017-02-21 | 2017-06-30 | 东南大学 | 一种金属掺杂的光热碳纳米材料及其制备方法和应用 |
US9779884B2 (en) | 2012-03-05 | 2017-10-03 | The Regents Of The University Of California | Capacitor with electrodes made of an interconnected corrugated carbon-based network |
CN108715471A (zh) * | 2018-06-13 | 2018-10-30 | 南京师范大学 | 一种基于铜纳米颗粒光热效应的海水淡化方法 |
CN108862443A (zh) * | 2018-06-01 | 2018-11-23 | 常熟理工学院 | 金纳米粒子/石墨烯三维光热转换材料及其用途 |
US10211495B2 (en) | 2014-06-16 | 2019-02-19 | The Regents Of The University Of California | Hybrid electrochemical cell |
CN109751656A (zh) * | 2019-01-25 | 2019-05-14 | 王立平 | 一种石墨烯ptc结合红外电采暖技术 |
CN110240530A (zh) * | 2019-06-28 | 2019-09-17 | 北京工业大学 | 一种碳纳米管/石墨烯改性金属/氧化物纳米含能复合薄膜及其方法 |
CN110302474A (zh) * | 2019-06-28 | 2019-10-08 | 徐仕坚 | 一种旋磁场远红外能量房 |
CN110614454A (zh) * | 2019-09-27 | 2019-12-27 | 江苏科技大学 | 一种基于石墨烯的化学镀锡钎料、焊膏及其制备方法 |
CN110669284A (zh) * | 2019-09-30 | 2020-01-10 | 北京石墨烯技术研究院有限公司 | 石墨烯复合材料及其制备方法,以及一种制成品及其应用 |
US10614968B2 (en) | 2016-01-22 | 2020-04-07 | The Regents Of The University Of California | High-voltage devices |
CN110980701A (zh) * | 2019-12-27 | 2020-04-10 | 大连理工大学 | 一种石墨烯的制备方法、石墨烯及其应用 |
US10622163B2 (en) | 2016-04-01 | 2020-04-14 | The Regents Of The University Of California | Direct growth of polyaniline nanotubes on carbon cloth for flexible and high-performance supercapacitors |
US10655020B2 (en) | 2015-12-22 | 2020-05-19 | The Regents Of The University Of California | Cellular graphene films |
US10734167B2 (en) | 2014-11-18 | 2020-08-04 | The Regents Of The University Of California | Porous interconnected corrugated carbon-based network (ICCN) composite |
CN111662410A (zh) * | 2020-07-06 | 2020-09-15 | 华南农业大学 | 三明治结构分子印迹sers基底及其制备方法与应用 |
CN112316142A (zh) * | 2020-11-23 | 2021-02-05 | 苏州大学 | 一种半导体聚合物纳米颗粒及其制备方法和应用 |
US10938032B1 (en) | 2019-09-27 | 2021-03-02 | The Regents Of The University Of California | Composite graphene energy storage methods, devices, and systems |
US10938021B2 (en) | 2016-08-31 | 2021-03-02 | The Regents Of The University Of California | Devices comprising carbon-based material and fabrication thereof |
US11062855B2 (en) | 2016-03-23 | 2021-07-13 | The Regents Of The University Of California | Devices and methods for high voltage and solar applications |
US11097951B2 (en) | 2016-06-24 | 2021-08-24 | The Regents Of The University Of California | Production of carbon-based oxide and reduced carbon-based oxide on a large scale |
US11133134B2 (en) | 2017-07-14 | 2021-09-28 | The Regents Of The University Of California | Simple route to highly conductive porous graphene from carbon nanodots for supercapacitor applications |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8828193B2 (en) * | 2011-09-06 | 2014-09-09 | Indian Institute Of Technology Madras | Production of graphene using electromagnetic radiation |
EP2785310B1 (fr) * | 2011-11-30 | 2017-10-25 | Fundació Institut de Ciències Fotòniques | Procédé destiné à améliorer la photoépilation basé sur des nanocomplexes métalliques |
JP5896142B2 (ja) * | 2012-03-23 | 2016-03-30 | 東芝ライテック株式会社 | セラミックヒータおよび定着装置 |
US9174413B2 (en) | 2012-06-14 | 2015-11-03 | International Business Machines Corporation | Graphene based structures and methods for shielding electromagnetic radiation |
US9413075B2 (en) | 2012-06-14 | 2016-08-09 | Globalfoundries Inc. | Graphene based structures and methods for broadband electromagnetic radiation absorption at the microwave and terahertz frequencies |
JP5994569B2 (ja) * | 2012-10-26 | 2016-09-21 | 株式会社豊田自動織機 | 熱変換部材及び熱変換積層体 |
JP6059952B2 (ja) * | 2012-10-26 | 2017-01-11 | 株式会社豊田自動織機 | 熱変換部材及び熱変換積層体 |
US9545625B2 (en) * | 2012-11-09 | 2017-01-17 | Arizona Board Of Regents On Behalf Of Arizona State University | Ionic liquid functionalized reduced graphite oxide / TiO2 nanocomposite for conversion of CO2 to CH4 |
CN103000245B (zh) * | 2012-12-03 | 2015-09-23 | 京东方科技集团股份有限公司 | 一种石墨烯金属混合电极材料、其制备方法、应用及基板 |
KR20140100619A (ko) * | 2013-02-05 | 2014-08-18 | 도시바삼성스토리지테크놀러지코리아 주식회사 | 복수의 광원을 사용한 그래핀 제조장치 |
US20160303544A1 (en) * | 2013-11-04 | 2016-10-20 | Portland State University | Method of making a metallic composite and use thereof |
CN112479189A (zh) | 2014-02-17 | 2021-03-12 | 威廉马歇莱思大学 | 激光诱导的石墨烯材料和它们在电子装置中的用途 |
US20170025557A1 (en) * | 2014-04-02 | 2017-01-26 | Georgia Tech Research Corporation | Broadband reduced graphite oxide based photovoltaic devices |
US10828400B2 (en) | 2014-06-10 | 2020-11-10 | The Research Foundation For The State University Of New York | Low temperature, nanostructured ceramic coatings |
TWI548448B (zh) * | 2015-01-05 | 2016-09-11 | 國立交通大學 | 製備二維材料的方法 |
GB201501342D0 (en) * | 2015-01-27 | 2015-03-11 | Univ Lancaster | Improvements relating to the authentication of physical entities |
AU2015200886A1 (en) * | 2015-02-20 | 2016-09-08 | Monash University | Carbon-based surface plasmon source and applications thereof |
US10632534B2 (en) * | 2015-02-26 | 2020-04-28 | Purdue Research Foundation | Processes for producing and treating thin-films composed of nanomaterials |
US9931609B1 (en) * | 2015-04-10 | 2018-04-03 | University Of Puerto Rico | Antibacterial activity of silver-graphene quantum dots nanocomposites against gram-positive and gram-negative bacteria |
US9863885B2 (en) * | 2015-10-07 | 2018-01-09 | The Regents Of The University Of Californa | Graphene-based multi-modal sensors |
CA2916078C (fr) * | 2015-12-22 | 2016-10-11 | Envision Sq Inc. | Materiau composite photocatalytique pour la decomposition des polluants atmospheriques |
EP3458420B1 (fr) * | 2016-05-16 | 2021-02-24 | B.G. Negev Technologies & Applications Ltd., at Ben-Gurion University | Espaceur antibiofilm et antimicrobien pour membrane fonctionnelle |
JPWO2018066630A1 (ja) * | 2016-10-05 | 2019-08-29 | 学校法人関西学院 | イリジウム化合物−グラフェンオキサイド複合体 |
WO2018066628A1 (fr) * | 2016-10-05 | 2018-04-12 | 学校法人関西学院 | Complexe de composé métallique et d'oxyde de graphène |
JPWO2018066629A1 (ja) * | 2016-10-05 | 2019-08-29 | 学校法人関西学院 | 銅化合物−グラフェンオキサイド複合体 |
CN106540711A (zh) * | 2016-10-25 | 2017-03-29 | 东南大学 | 一种绿色制备银‑氧化锌‑石墨烯‑泡沫镍材料的方法 |
CN106654382A (zh) * | 2017-01-05 | 2017-05-10 | 戴雪青 | 一种石墨烯电池的制备方法 |
US10566145B2 (en) * | 2017-03-18 | 2020-02-18 | King Abdulaziz City For Science And Technology—Kacst | TiO2-graphene-silver hybrid nanocomposite and a method of preparation thereof |
US11219892B2 (en) | 2017-10-06 | 2022-01-11 | Virginia Commonwealth University | Carbon based materials as solid-state ligands for metal nanoparticle catalysts |
KR102491248B1 (ko) | 2018-03-06 | 2023-01-20 | 삼성전자주식회사 | 질량 분석 장치, 질량 분석 방법 및 반도체 웨이퍼의 분석 방법 |
KR102082694B1 (ko) | 2018-05-09 | 2020-02-28 | 한국과학기술연구원 | 그래핀 적용 대상의 표면에 그래핀을 직접 합성하는 방법 및 상기 방법을 이용하여 형성된 그래핀을 포함하는 소자 |
US10941041B2 (en) * | 2018-07-06 | 2021-03-09 | Savannah River Nuclear Solutions, Llc | Method of manufacturing graphene using photoreduction |
CN110026172B (zh) * | 2019-04-28 | 2022-01-04 | 江苏双良环境科技有限公司 | 一种在金属网上固化石墨烯基光催化剂的方法 |
US10844483B1 (en) | 2019-12-16 | 2020-11-24 | Quantum Elements Development, Inc. | Quantum printing methods |
CN111349984B (zh) * | 2020-03-12 | 2022-06-28 | 北京服装学院 | 一种制备石墨烯纤维的清洁化湿法纺丝方法 |
US11623871B2 (en) * | 2020-12-15 | 2023-04-11 | Quantum Elements Development Inc. | Rare earth metal instantiation |
CN113818030B (zh) * | 2021-09-30 | 2022-09-02 | 北华航天工业学院 | 基于Au@rGO-PEI/PVB光热-热电驱动的电催化产氢集成体系、制备及应用 |
CN114027320B (zh) * | 2021-12-27 | 2023-06-02 | 上海金铎禹辰水环境工程有限公司 | 一种石墨烯抗菌材料及其制备方法和应用 |
CN114778652B (zh) * | 2022-03-18 | 2023-07-18 | 华南理工大学 | 一种激光直写图案化纳米金@还原氧化石墨烯纸基电化学传感器的制备方法与应用 |
CN114471545B (zh) * | 2022-03-25 | 2023-05-26 | 上海大学 | 一种贵金属-氧化石墨烯基复合催化剂及其制备方法 |
US20230340671A1 (en) * | 2022-04-26 | 2023-10-26 | II Gerard Bello | Apparatus for deposition of graphene upon a metal substrate and method for doing so |
CN115608384A (zh) * | 2022-10-25 | 2023-01-17 | 福建师范大学 | 一种卤化物钙钛矿-石墨烯-Pt复合材料及其制备方法与应用 |
CN115676986A (zh) * | 2022-11-01 | 2023-02-03 | 河南师范大学 | 一种三维孔结构Fe2O3/rGO/泡沫镍复合电容脱盐电极的制备及应用 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070131915A1 (en) * | 2005-11-18 | 2007-06-14 | Northwestern University | Stable dispersions of polymer-coated graphitic nanoplatelets |
WO2008112639A2 (fr) * | 2007-03-13 | 2008-09-18 | Wisconsin Alumni Research Foundation | Cellules photovoltaiques a base de graphite |
US20090068471A1 (en) * | 2007-09-10 | 2009-03-12 | Samsung Electronics Co., Ltd. | Graphene sheet and process of preparing the same |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8317984B2 (en) * | 2009-04-16 | 2012-11-27 | Northrop Grumman Systems Corporation | Graphene oxide deoxygenation |
-
2010
- 2010-12-10 US US13/514,671 patent/US9768355B2/en not_active Expired - Fee Related
- 2010-12-10 WO PCT/US2010/059870 patent/WO2011072213A2/fr active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070131915A1 (en) * | 2005-11-18 | 2007-06-14 | Northwestern University | Stable dispersions of polymer-coated graphitic nanoplatelets |
WO2008112639A2 (fr) * | 2007-03-13 | 2008-09-18 | Wisconsin Alumni Research Foundation | Cellules photovoltaiques a base de graphite |
US20090068471A1 (en) * | 2007-09-10 | 2009-03-12 | Samsung Electronics Co., Ltd. | Graphene sheet and process of preparing the same |
Non-Patent Citations (2)
Title |
---|
VICTOR ABDELSAYED ET AL. J. PHYS. CHEM. LETT. vol. 1, 08 September 2010, pages 2804 - 2809 * |
YONG ZHOU ET AL. ADVANCED MATERIALS vol. 22, 03 September 2009, pages 67 - 71 * |
Cited By (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102290251A (zh) * | 2011-07-18 | 2011-12-21 | 艾荻环境技术(上海)有限公司 | 基于导电基底的光电还原制备石墨烯薄膜的方法 |
CN102304737A (zh) * | 2011-09-06 | 2012-01-04 | 天津大学 | 氧化锌/氧化石墨烯复合光开关材料及其电化学制备方法 |
CN102615290A (zh) * | 2011-12-12 | 2012-08-01 | 湖南理工学院 | 一种Ag/石墨烯纳米复合材料的制备方法 |
CN102615290B (zh) * | 2011-12-12 | 2016-04-06 | 湖南理工学院 | 一种Ag/石墨烯纳米复合材料的制备方法 |
US11397173B2 (en) | 2011-12-21 | 2022-07-26 | The Regents Of The University Of California | Interconnected corrugated carbon-based network |
US10648958B2 (en) | 2011-12-21 | 2020-05-12 | The Regents Of The University Of California | Interconnected corrugated carbon-based network |
US20160077074A1 (en) * | 2011-12-21 | 2016-03-17 | The Regents Of The University Of California | Interconnected corrugated carbon-based network |
US20140239236A1 (en) * | 2012-01-18 | 2014-08-28 | Deepak Shukla | Method for reducing graphite oxide |
US20130180842A1 (en) * | 2012-01-18 | 2013-07-18 | Thomas Nelson Blanton | Method for reducing graphite oxide |
US11257632B2 (en) | 2012-03-05 | 2022-02-22 | The Regents Of The University Of California | Capacitor with electrodes made of an interconnected corrugated carbon-based network |
US11915870B2 (en) | 2012-03-05 | 2024-02-27 | The Regents Of The University Of California | Capacitor with electrodes made of an interconnected corrugated carbon-based network |
US9779884B2 (en) | 2012-03-05 | 2017-10-03 | The Regents Of The University Of California | Capacitor with electrodes made of an interconnected corrugated carbon-based network |
US11004618B2 (en) | 2012-03-05 | 2021-05-11 | The Regents Of The University Of California | Capacitor with electrodes made of an interconnected corrugated carbon-based network |
KR101367414B1 (ko) * | 2012-08-22 | 2014-02-27 | 도시바삼성스토리지테크놀러지코리아 주식회사 | 다수의 광 기록장치를 이용한 그래핀 제조 방법 및 장치 |
KR101374839B1 (ko) * | 2012-08-22 | 2014-03-19 | 도시바삼성스토리지테크놀러지코리아 주식회사 | 다수의 광 소자를 이용한 그래핀 제조 방법 및 장치, 광 기록장치 |
CN103055838A (zh) * | 2013-01-21 | 2013-04-24 | 武汉理工大学 | TiO2-rGO复合光催化剂的可见光光敏化制备方法 |
CN103273219A (zh) * | 2013-06-28 | 2013-09-04 | 深圳市富维德电子科技有限公司 | 一种锡银铜镍焊料及其制备方法 |
CN103738944A (zh) * | 2013-11-14 | 2014-04-23 | 盐城增材科技有限公司 | 一种通过纳米粒子掺杂制备三维石墨烯的方法 |
US10847852B2 (en) | 2014-06-16 | 2020-11-24 | The Regents Of The University Of California | Hybrid electrochemical cell |
US11569538B2 (en) | 2014-06-16 | 2023-01-31 | The Regents Of The University Of California | Hybrid electrochemical cell |
US10211495B2 (en) | 2014-06-16 | 2019-02-19 | The Regents Of The University Of California | Hybrid electrochemical cell |
CN104399090A (zh) * | 2014-11-12 | 2015-03-11 | 深圳先进技术研究院 | 一种聚多巴胺修饰的还原氧化石墨烯及其制备方法和应用 |
US10734167B2 (en) | 2014-11-18 | 2020-08-04 | The Regents Of The University Of California | Porous interconnected corrugated carbon-based network (ICCN) composite |
US11810716B2 (en) | 2014-11-18 | 2023-11-07 | The Regents Of The University Of California | Porous interconnected corrugated carbon-based network (ICCN) composite |
CN104401987A (zh) * | 2014-11-26 | 2015-03-11 | 东华大学 | 一种多孔石墨烯弹性泡沫的制备方法 |
CN104842087A (zh) * | 2015-05-09 | 2015-08-19 | 芜湖鼎瀚再制造技术有限公司 | 一种Ni-Mn-Mo纳米焊层及其制备方法 |
CN107848290A (zh) * | 2015-07-23 | 2018-03-27 | 爱克发有限公司 | 包含氧化石墨的平版印刷印版前体 |
WO2017013058A1 (fr) * | 2015-07-23 | 2017-01-26 | Agfa Graphics Nv | Composition comprenant de l'oxyde de graphite et un composé absorbant le rayonnement infrarouge |
CN107922194A (zh) * | 2015-07-23 | 2018-04-17 | 爱克发有限公司 | 包含氧化石墨和红外吸收化合物的组合物 |
US10632734B2 (en) | 2015-07-23 | 2020-04-28 | Agfa Nv | Lithographic printing plate precursor comprising graphite oxide |
EP3121008A1 (fr) | 2015-07-23 | 2017-01-25 | Agfa Graphics Nv | Précurseur de plaque d'impression lithographique comprenant de l'oxyde de graphite |
WO2017013060A1 (fr) | 2015-07-23 | 2017-01-26 | Agfa Graphics Nv | Précurseur de plaque d'impression lithographique comprenant de l'oxyde de graphite |
CN107848290B (zh) * | 2015-07-23 | 2019-10-18 | 爱克发有限公司 | 包含氧化石墨的平版印刷印版前体 |
CN105597763A (zh) * | 2015-12-21 | 2016-05-25 | 天津工业大学 | 磁性石墨烯基氧化锌复合材料的制备方法 |
US11118073B2 (en) | 2015-12-22 | 2021-09-14 | The Regents Of The University Of California | Cellular graphene films |
US11891539B2 (en) | 2015-12-22 | 2024-02-06 | The Regents Of The University Of California | Cellular graphene films |
US10655020B2 (en) | 2015-12-22 | 2020-05-19 | The Regents Of The University Of California | Cellular graphene films |
CN105645459A (zh) * | 2016-01-15 | 2016-06-08 | 长沙理工大学 | 一种表面修饰海胆状ZnO/TiO2复合材料及其制备方法 |
US11842850B2 (en) | 2016-01-22 | 2023-12-12 | The Regents Of The University Of California | High-voltage devices |
US10614968B2 (en) | 2016-01-22 | 2020-04-07 | The Regents Of The University Of California | High-voltage devices |
US10892109B2 (en) | 2016-01-22 | 2021-01-12 | The Regents Of The University Of California | High-voltage devices |
US11961667B2 (en) | 2016-03-23 | 2024-04-16 | The Regents Of The University Of California | Devices and methods for high voltage and solar applications |
US11062855B2 (en) | 2016-03-23 | 2021-07-13 | The Regents Of The University Of California | Devices and methods for high voltage and solar applications |
US10622163B2 (en) | 2016-04-01 | 2020-04-14 | The Regents Of The University Of California | Direct growth of polyaniline nanotubes on carbon cloth for flexible and high-performance supercapacitors |
CN105905988A (zh) * | 2016-05-25 | 2016-08-31 | 安徽普氏生态环境工程有限公司 | 一种基于可见光催化-电催化空气氧化降解污水cod的方法 |
CN105905988B (zh) * | 2016-05-25 | 2018-11-30 | 安徽普氏生态环境工程有限公司 | 一种基于可见光催化-电催化空气氧化降解污水cod的方法 |
US11097951B2 (en) | 2016-06-24 | 2021-08-24 | The Regents Of The University Of California | Production of carbon-based oxide and reduced carbon-based oxide on a large scale |
CN106111207A (zh) * | 2016-06-27 | 2016-11-16 | 镇江市高等专科学校 | 一种有机金属框架/纳米二氧化锡/石墨烯复合光催化材料及其制备方法和用途 |
US10938021B2 (en) | 2016-08-31 | 2021-03-02 | The Regents Of The University Of California | Devices comprising carbon-based material and fabrication thereof |
US11791453B2 (en) | 2016-08-31 | 2023-10-17 | The Regents Of The University Of California | Devices comprising carbon-based material and fabrication thereof |
CN106902350A (zh) * | 2017-02-21 | 2017-06-30 | 东南大学 | 一种金属掺杂的光热碳纳米材料及其制备方法和应用 |
US11133134B2 (en) | 2017-07-14 | 2021-09-28 | The Regents Of The University Of California | Simple route to highly conductive porous graphene from carbon nanodots for supercapacitor applications |
CN108862443A (zh) * | 2018-06-01 | 2018-11-23 | 常熟理工学院 | 金纳米粒子/石墨烯三维光热转换材料及其用途 |
CN108715471A (zh) * | 2018-06-13 | 2018-10-30 | 南京师范大学 | 一种基于铜纳米颗粒光热效应的海水淡化方法 |
CN109751656A (zh) * | 2019-01-25 | 2019-05-14 | 王立平 | 一种石墨烯ptc结合红外电采暖技术 |
CN110302474A (zh) * | 2019-06-28 | 2019-10-08 | 徐仕坚 | 一种旋磁场远红外能量房 |
CN110302474B (zh) * | 2019-06-28 | 2021-05-14 | 徐仕坚 | 一种旋磁场远红外能量房 |
CN110240530A (zh) * | 2019-06-28 | 2019-09-17 | 北京工业大学 | 一种碳纳米管/石墨烯改性金属/氧化物纳米含能复合薄膜及其方法 |
CN110614454A (zh) * | 2019-09-27 | 2019-12-27 | 江苏科技大学 | 一种基于石墨烯的化学镀锡钎料、焊膏及其制备方法 |
US10938032B1 (en) | 2019-09-27 | 2021-03-02 | The Regents Of The University Of California | Composite graphene energy storage methods, devices, and systems |
CN110669284A (zh) * | 2019-09-30 | 2020-01-10 | 北京石墨烯技术研究院有限公司 | 石墨烯复合材料及其制备方法,以及一种制成品及其应用 |
CN110980701A (zh) * | 2019-12-27 | 2020-04-10 | 大连理工大学 | 一种石墨烯的制备方法、石墨烯及其应用 |
CN111662410A (zh) * | 2020-07-06 | 2020-09-15 | 华南农业大学 | 三明治结构分子印迹sers基底及其制备方法与应用 |
CN112316142A (zh) * | 2020-11-23 | 2021-02-05 | 苏州大学 | 一种半导体聚合物纳米颗粒及其制备方法和应用 |
CN112316142B (zh) * | 2020-11-23 | 2021-06-04 | 苏州大学 | 一种半导体聚合物纳米颗粒及其制备方法和应用 |
Also Published As
Publication number | Publication date |
---|---|
US9768355B2 (en) | 2017-09-19 |
US20120265122A1 (en) | 2012-10-18 |
WO2011072213A3 (fr) | 2011-12-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9768355B2 (en) | Production of graphene and nanoparticle catalysts supported on graphene using laser radiation | |
Svoboda et al. | Graphitic carbon nitride nanosheets as highly efficient photocatalysts for phenol degradation under high-power visible LED irradiation | |
Rohokale et al. | A novel two-step co-precipitation approach of CuS/NiMn2O4 heterostructured nanocatalyst for enhanced visible light driven photocatalytic activity via efficient photo-induced charge separation properties | |
Pan et al. | Structure of Z-scheme CdS/CQDs/BiOCl heterojunction with enhanced photocatalytic activity for environmental pollutant elimination | |
Naik et al. | Pulsed laser synthesis of reduced graphene oxide supported ZnO/Au nanostructures in liquid with enhanced solar light photocatalytic activity | |
Liu et al. | Ag–ZnO submicrometer rod arrays for high-efficiency photocatalytic degradation of Congo red and disinfection | |
Saravanakumar et al. | The design of novel visible light driven Ag/CdO as smart nanocomposite for photodegradation of different dye contaminants | |
Mohamed et al. | A novel design of porous Cr2O3@ ZnO nanocomposites as highly efficient photocatalyst toward degradation of antibiotics: a case study of ciprofloxacin | |
Qin et al. | One-step fabrication of TiO2/Ti foil annular photoreactor for photocatalytic degradation of formaldehyde | |
Pimpliskar et al. | Synthesis of silver-loaded ZnO nanorods and their enhanced photocatalytic activity and photoconductivity study | |
Jaleh et al. | State-of-the-art technology: Recent investigations on laser-mediated synthesis of nanocomposites for environmental remediation | |
Roza et al. | Tailoring the active surface sites of ZnO nanorods on the glass substrate for photocatalytic activity enhancement | |
Lv et al. | Layered double hydroxide nanosheets as efficient photocatalysts for NO removal: Band structure engineering and surface hydroxyl ions activation | |
György et al. | Enhanced UV-and visible-light driven photocatalytic performances and recycling properties of graphene oxide/ZnO hybrid layers | |
Roza et al. | ZnO nanorods decorated with carbon nanodots and its metal doping as efficient photocatalyst for degradation of methyl blue solution | |
Kumar et al. | Rapid microwave synthesis of reduced graphene oxide-supported TiO2 nanostructures as high performance photocatalyst | |
Khavar et al. | Facile preparation of multi-doped TiO2/rGO cross-linked 3D aerogel (GaNF@ TGA) nancomposite as an efficient visible-light activated catalyst for photocatalytic oxidation and detoxification of atrazine | |
Sharma et al. | Insight into ZnO/carbon hybrid materials for photocatalytic reduction of CO2: An in-depth review | |
Chen et al. | Bi4Ti3O12/TiO2 heterostructure: Synthesis, characterization and enhanced photocatalytic activity | |
Yang et al. | Fabrication of CuCo2S4 yolk-shell spheres embedded with S-scheme V2O5-deposited on wrinkled g-C3N4 for effective promotion of levofloxacin photodegradation | |
Mohanty et al. | Hot electron-mediated photocatalytic degradation of ciprofloxacin using Au-decorated SrTiO3-and Ti3C2 MXene-based interfacial heterostructure nanoarchitectonics | |
Kumar et al. | Controlling the kinetics of visible-light-induced photocatalytic performance of gold decorated graphitic carbon nitride nanocomposite using different proteins | |
Sharma et al. | Recent advances in wide spectral responsive and photothermal heterojunctions for photocatalytic pharmaceutical pollutant degradation and energy conversion | |
Abulizi et al. | In situ synthesis of hierarchical nitrogen-doped MoS2 microsphere with an excellent visible light-driven photocatalytic nitrogen fixation ability | |
Imranullah et al. | Stable and highly efficient natural sunlight driven photo-degradation of organic pollutants using hierarchical porous flower-like spinel nickel cobaltite nanoflakes |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10836744 Country of ref document: EP Kind code of ref document: A1 |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10836744 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13514671 Country of ref document: US |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 10836744 Country of ref document: EP Kind code of ref document: A2 |