WO2011058957A1 - 有機エレクトロルミネッセンス素子の製造方法 - Google Patents
有機エレクトロルミネッセンス素子の製造方法 Download PDFInfo
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- WO2011058957A1 WO2011058957A1 PCT/JP2010/069892 JP2010069892W WO2011058957A1 WO 2011058957 A1 WO2011058957 A1 WO 2011058957A1 JP 2010069892 W JP2010069892 W JP 2010069892W WO 2011058957 A1 WO2011058957 A1 WO 2011058957A1
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- light emitting
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- HFXKQSZZZPGLKQ-UHFFFAOYSA-N cyclopentamine Chemical class CNC(C)CC1CCCC1 HFXKQSZZZPGLKQ-UHFFFAOYSA-N 0.000 description 1
- CUIWZLHUNCCYBL-UHFFFAOYSA-N decacyclene Chemical compound C12=C([C]34)C=CC=C4C=CC=C3C2=C2C(=C34)C=C[CH]C4=CC=CC3=C2C2=C1C1=CC=CC3=CC=CC2=C31 CUIWZLHUNCCYBL-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 150000008376 fluorenones Chemical class 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- JVZRCNQLWOELDU-UHFFFAOYSA-N gamma-Phenylpyridine Natural products C1=CC=CC=C1C1=CC=NC=C1 JVZRCNQLWOELDU-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910021482 group 13 metal Inorganic materials 0.000 description 1
- 229940083761 high-ceiling diuretics pyrazolone derivative Drugs 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 150000002503 iridium Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 1
- 229910052808 lithium carbonate Inorganic materials 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical class C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- DGBWPZSGHAXYGK-UHFFFAOYSA-N perinone Chemical class C12=NC3=CC=CC=C3N2C(=O)C2=CC=C3C4=C2C1=CC=C4C(=O)N1C2=CC=CC=C2N=C13 DGBWPZSGHAXYGK-UHFFFAOYSA-N 0.000 description 1
- FIZIRKROSLGMPL-UHFFFAOYSA-N phenoxazin-1-one Chemical compound C1=CC=C2N=C3C(=O)C=CC=C3OC2=C1 FIZIRKROSLGMPL-UHFFFAOYSA-N 0.000 description 1
- UOMHBFAJZRZNQD-UHFFFAOYSA-N phenoxazone Natural products C1=CC=C2OC3=CC(=O)C=CC3=NC2=C1 UOMHBFAJZRZNQD-UHFFFAOYSA-N 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 150000004033 porphyrin derivatives Chemical class 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical class O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229940102127 rubidium chloride Drugs 0.000 description 1
- 229910001952 rubidium oxide Inorganic materials 0.000 description 1
- CWBWCLMMHLCMAM-UHFFFAOYSA-M rubidium(1+);hydroxide Chemical compound [OH-].[Rb+].[Rb+] CWBWCLMMHLCMAM-UHFFFAOYSA-M 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical class C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 150000003518 tetracenes Chemical class 0.000 description 1
- VLLMWSRANPNYQX-UHFFFAOYSA-N thiadiazole Chemical compound C1=CSN=N1.C1=CSN=N1 VLLMWSRANPNYQX-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 150000003577 thiophenes Chemical class 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 150000001651 triphenylamine derivatives Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/821—Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Definitions
- the present invention relates to a method for producing an organic electroluminescence element (hereinafter sometimes referred to as an organic EL element), and a display device and an illumination device including the organic EL element obtained by the production method.
- an organic electroluminescence element hereinafter sometimes referred to as an organic EL element
- the organic EL element includes a pair of electrodes (anode and cathode) and a light emitting layer provided between the electrodes.
- the organic EL element emits light when a voltage is applied to a pair of electrodes so that holes are injected from the anode and electrons are injected from the cathode, and these holes and electrons are combined in the light emitting layer.
- One of the pair of electrodes is composed of an electrode exhibiting optical transparency, and light generated in the light emitting layer is emitted outside through the electrode exhibiting optical transparency.
- ITO indium tin oxide
- the ITO thin film Since the ITO thin film has a higher refractive index than that of the light emitting layer, total reflection occurs at the interface of the ITO thin film. Therefore, the present situation is that most of the light emitted from the light emitting layer is not used effectively without being emitted outside. Therefore, in order to reduce the angle of incidence on the electrode (ITO thin film) and suppress total reflection, manufacture of an organic EL element in which a diffraction grating that changes the traveling direction of light emitted from the light emitting layer is formed on the electrode or light emitting layer. A method has been proposed (see, for example, Patent Document 1).
- an organic EL element includes a predetermined organic layer or inorganic layer between a pair of electrodes as necessary, and sequentially stacks the plurality of layers on a support substrate.
- a predetermined organic layer or inorganic layer between a pair of electrodes as necessary, and sequentially stacks the plurality of layers on a support substrate.
- a concavo-convex structure can be formed in a plurality of layers, but each layer is formed so that the concavo-convex shape of the surface of the curable resin layer and the surface shape of each layer are completely matched. It is difficult to laminate the layers, and as the distance from the curable resin layer increases, the uneven shape of each layer gradually becomes gentle. As described above, in the conventional manufacturing method, it is difficult to form the desired uneven shape in the layer provided between the pair of electrodes. Moreover, in order to form uneven
- an object of the present invention is to provide a method of manufacturing an organic EL element that can easily form a desired structure for suppressing total reflection generated in an electrode in a layer provided between a pair of electrodes.
- the present invention is (1) a method for producing an organic electroluminescence device comprising a pair of electrodes and two or more organic layers provided between the electrodes, and including a light emitting layer as the two or more organic layers. , Forming one of the pair of electrodes; Forming two or more organic layers having the periodic structure that inclines the traveling direction of light traveling in a direction substantially perpendicular to the thickness direction of the light emitting layer in the thickness direction; Forming the other electrode of the pair of electrodes, In the process of forming two or more organic layers, After laminating two or more flat layers to be the organic layer, Furthermore, the organic electroluminescence device is formed by imprinting the periodic structure that is two-dimensionally and periodically arranged in a plane perpendicular to the thickness direction of the light emitting layer on the two or more layers of the flat plate.
- the present invention relates to (2) the method for producing an organic electroluminescent element according to (1), wherein the organic layer having a periodic structure periodically arranged two-dimensionally is an organic layer containing a polymer compound.
- the present invention relates to a display device comprising an organic electroluminescence element produced by the production method according to (3), (1) or (2).
- the present invention relates to a lighting device including an organic electroluminescence element manufactured by the manufacturing method according to (1) or (2).
- an organic EL element in which a desired structure for suppressing total reflection generated in an electrode is formed in a layer provided between a pair of electrodes.
- the organic EL device of this embodiment includes a pair of electrodes and two or more organic layers provided between the electrodes, and includes a light emitting layer as the two or more organic layers, and usually the pair of electrodes. And two or more organic layers are sequentially laminated on a supporting substrate.
- the pair of electrodes have different polarities and are provided as an anode or a cathode, respectively.
- One of the pair of electrodes is constituted by an electrode exhibiting light transmittance.
- Another electrode having a polarity different from that of the light transmissive electrode may be a light transmissive electrode or an opaque electrode, but reflects light toward the light transmissive electrode. It is preferable that the reflection electrode be configured.
- a light emitting layer is provided between the pair of electrodes as at least one of the two or more organic layers. That is, at least one light emitting layer is provided between the pair of electrodes.
- a predetermined organic layer may be provided between the pair of electrodes.
- Two or more light-emitting layers may be provided between the pair of electrodes.
- an inorganic layer made of an inorganic material or a mixed layer made of an organic material and an inorganic material may be provided between the pair of electrodes.
- FIG. 1 is a diagram schematically showing a method for manufacturing an organic EL element.
- the organic EL device manufacturing method of the present invention includes a step of forming one of a pair of electrodes, a step of forming two or more organic layers, and the other electrode of the pair of electrodes.
- the step of forming two or more organic layers after laminating two or more flat layers to be the organic layer, two-dimensionally in a plane perpendicular to the thickness direction of the light emitting layer A traveling direction of light that travels in a direction substantially perpendicular to the thickness direction of the light emitting layer by forming a periodic structure that is periodically arranged on the flat layer that is formed by laminating two or more layers by an imprint method.
- An organic layer having a periodic structure in which is tilted in the thickness direction is formed.
- the organic EL device of the present invention includes two or more organic layers between a pair of electrodes.
- an organic EL device including a hole injection layer and a light emitting layer as two or more organic layers will be described.
- FIG. 1 as an example of the embodiment, one electrode 2, a hole injection layer 3, a light emitting layer 4, an electron injection layer 8, the other electrode 5, and a sealing member 10 are laminated on a support substrate 6 in this order.
- the manufacturing method of the comprised organic EL element 1 is shown.
- a so-called bottom emission type organic EL element in which light emitted from the light emitting layer 4 is emitted through the support substrate 6
- a substrate exhibiting light transmittance is used as the support substrate 6.
- the support substrate 6 may be a light transmissive substrate. It may be an opaque substrate.
- One electrode 2 is provided on a support substrate 6.
- the one electrode 2 is flat on both main surfaces and has a flat plate shape. That is, the surface of one electrode 2 is not uneven.
- an electrode exhibiting optical transparency is used for one electrode 2.
- a reflective electrode that reflects light toward the other electrode 5 as the one electrode 2.
- a support substrate 6 described later is prepared, and one electrode is formed on the support substrate 6 by a predetermined method described later.
- one electrode 2 is provided as an anode.
- an organic EL element having a configuration in which an electrode functioning as an anode of a pair of electrodes is disposed near the support substrate 6 and an electrode functioning as a cathode is disposed at a position away from the support substrate 6 will be described.
- an organic EL element having a configuration in which an electrode functioning as a cathode of a pair of electrodes is disposed near the support substrate, and an electrode functioning as an anode is disposed at a position away from the support substrate.
- Step of forming two or more organic layers In the step of forming two or more organic layers, after laminating two or more flat layers to be the organic layers, they are further periodically arranged two-dimensionally in a plane perpendicular to the thickness direction of the light emitting layer.
- the periodic structure is formed on the flat plate layer laminated by two or more layers by the imprint method, so that the traveling direction of light traveling in a direction substantially perpendicular to the thickness direction of the light emitting layer is the thickness direction.
- An organic layer having an inclined periodic structure is formed.
- the hole injection layer 3 and the light emitting layer 4 are formed as two or more organic layers.
- a flat layer to be an organic layer (hole injection layer 3 in this embodiment) is formed.
- the flat layer can be formed, for example, by applying an ink containing a material for the layer by a predetermined application method and drying the ink.
- a flat layer can be formed by applying an ink containing a material to be the hole injection layer 3 described later by a predetermined coating method and further drying.
- a flat layer to be an organic layer (in this embodiment, the light emitting layer 4) is laminated on the flat layer to be the organic layer (in the present embodiment, hole injection layer 3) formed as described above.
- the flat layer can be formed in the same manner as the flat layer that becomes the hole injection layer 3 described above.
- a plate-like layer that becomes the light-emitting layer 4 can be formed by applying an ink containing a material that becomes the light-emitting layer 4 described later by a predetermined application method and further drying.
- a periodic structure is formed in the flat layer laminated as described above by an imprint method (a so-called embossing method).
- a periodic structure is formed by transferring the shape of this mold to the flat plate layer laminated as described above, using a mold on which predetermined convex portions are formed.
- a mold on which convex portions are formed at positions corresponding to the depressions 11 to be formed in the laminate 7 of the hole injection layer 3 and the light emitting layer 4 is pressed against the flat layer, and the mold By transferring the structure, periodic recesses 11 can be formed in the laminate 7.
- this imprint method may be particularly referred to as nanoimprint.
- a method suitable for a member to be imprinted can be used, and examples thereof include a thermal imprint method and an optical imprint method.
- the thermal imprint method can be applied to a thermoplastic member. For example, by pressing a heated mold against a thermoplastic member, the shape of the mold can be transferred to the member. For example, it is preferable to transfer the shape of the mold to the member by pressing the mold heated to a temperature higher than the glass transition temperature of the thermoplastic member against the thermoplastic member.
- the photoimprint method can be applied to a member containing a material that is cured by irradiation with light, such as a photocurable monomer. For example, the shape of the mold can be transferred to the member by polymerizing the photocurable monomer by irradiating ultraviolet rays while the mold is pressed.
- the hole injection layer 3 and the light emitting layer 4 are provided as two or more organic layers.
- a periodic structure is formed in the laminate 7 of the hole injection layer 3 and the light emitting layer 4.
- the laminate 7 of the hole injection layer 3 and the light emitting layer 4 has a two-dimensional periodic structure in which the traveling direction of light traveling in a direction substantially perpendicular to the thickness direction of the light emitting layer is inclined in the thickness direction. Is formed.
- a plurality of dents 11 extending in the thickness direction of the stacked body of the hole injection layer and the light emitting layer are formed in the stacked body 7 of the hole injection layer 3 and the light emitting layer 4.
- the plurality of recesses 11 are formed two-dimensionally with a predetermined period on a plane perpendicular to the thickness direction of the stacked body 7 of the hole injection layer 3 and the light emitting layer 4.
- the recess 11 may or may not penetrate through the laminate 7 of the hole injection layer 3 and the light emitting layer 4. Further, when the dent 11 does not penetrate the laminate 7 of the hole injection layer 3 and the light emitting layer 4, the dent 11 is directed from the main surface on the other electrode 5 side of the light emitting layer toward the one electrode 2 side. It is formed to stretch.
- Examples of the shape defined by the surface facing the recess 11 include a cylinder, a polygonal column, a cone, a polygonal pyramid, a truncated cone and a truncated pyramid.
- FIG. 2 schematically shows an arrangement in which the recess 11 is provided.
- FIG. 2 is a view of the laminated body 7 of the hole injection layer 3 and the light emitting layer 4 as viewed from one side in the thickness direction, and assumes a cylindrical recess 11 and shows a circular shape as a cross-sectional shape of the recess 11. .
- the recess 11 is preferably formed over the entire region where the pair of electrodes are opposed to each other.
- the dent 11 includes a plurality of first stripes (hereinafter referred to as vertical stripes) arranged in parallel at equal intervals and a second stripe (hereinafter referred to as vertical stripes) arranged in parallel at equal intervals. It is arranged at the intersection with the horizontal stripe).
- first stripes hereinafter referred to as vertical stripes
- second stripe hereinafter referred to as vertical stripes
- vertical stripes and horizontal stripes are indicated by two-dot chain lines.
- the crossing angle ⁇ between the vertical stripes and the horizontal stripes may be any number, and the vertical stripe interval L1 and the horizontal stripe interval L2 may be the same or different.
- FIG. 2A shows the arrangement of the recesses 11 when the crossing angle ⁇ between the vertical stripes and the horizontal stripes is 90 °, and the vertical stripe interval L1 and the horizontal stripe interval L2 are the same.
- FIG. 2B shows the arrangement of the recesses 11 when the crossing angle ⁇ between the vertical stripes and the horizontal stripes is 45 °, and the interval between the vertical stripes is “2 1/2 ” when the interval between the horizontal stripes is “1”. Show. Further, for example, the recess 11 may be arranged at the intersection of the vertical stripe and the horizontal stripe when the crossing angle ⁇ of the vertical stripe and the horizontal stripe is 60 ° (acute angle) and the vertical stripe interval L1 and the horizontal stripe interval L2 are the same.
- the vertical stripe interval L1 and the horizontal stripe interval L2 and the vertical stripe-horizontal stripe crossing angle ⁇ respectively represent the traveling direction of light traveling in a direction substantially perpendicular to the thickness direction of the stacked body 7 of the hole injection layer 3 and the light emitting layer 4.
- the diffraction grating is set so as to change the direction of light so as to be inclined in the thickness direction of the laminate 7 of the hole injection layer 3 and the light emitting layer 4.
- the vertical stripe interval L1 and the horizontal stripe interval L2 are usually a distance ( ⁇ o / distance) obtained by dividing one wavelength ( ⁇ o) of light to be used as outgoing light among the light emitted from the light emitting layer 4 by the refractive index (n).
- the refractive index is a refractive index of a member having a periodic structure at a wavelength ( ⁇ o) of light to be used as outgoing light, and a refractive index of a member made of an organic substance is usually about 1.7.
- the height of the recess 11 in the thickness direction of the laminate 7 of the hole injection layer 3 and the light emitting layer 4 is preferably high enough to diffract light, for example, 40 nm to 2 ⁇ m, preferably 60 nm. ⁇ 51 ⁇ m, more preferably 80 nm to 500 nm.
- the width of the recess 11 in the direction perpendicular to the thickness direction of the laminate 7 of the hole injection layer 3 and the light emitting layer 4 is not more than half of the above-described vertical stripe interval L1 or horizontal stripe interval L2, and preferably 80 nm to It is 500 nm, more preferably 100 to 300 nm.
- an electron injection layer is formed.
- the electron injection layer 8 may be formed by filling a recess 11 formed in the stacked body 7 of the hole injection layer 3 and the light emitting layer 4 as in the embodiment described later.
- the injection layer 8 has a flat plate shape with both main surfaces being flat, and is formed on a laminate 7 of the hole injection layer 3 and the light emitting layer 4.
- a plurality of recesses 11 are formed in the laminate 7 of the hole injection layer 3 and the light emitting layer 4, and a flat plate shape is formed on the laminate 7 of the hole injection layer 3 and the light emitting layer 4.
- a periodic void is formed between the stacked body 7 of the hole injection layer 3 and the light emitting layer 4 and the electron injection layer 8.
- the electron injection layer of the present embodiment is formed by, for example, a laminating method. As shown in FIGS. 1 (5) and 6 (6), in this embodiment, the other electrode 5 and the electron injection layer 8 are laminated in this order on a predetermined sealing member 10 to be described later.
- the electron injection layer 8 can be formed on the light-emitting layer 4 by laminating a plate on which 5 and the electron injection layer 8 are laminated. By forming the electron injection layer 8 in this way, the other electrode 5 and the sealing member 10 are also formed at the same time.
- a laminating method specifically, Appl. Phys. Lett. 88, 223509 (2006).
- an electron injection layer can be formed on a laminate of a hole injection layer and a light emitting layer by previously forming an electron injection layer on a highly peelable substrate and further transferring the layer.
- the other electrode 5 is formed on the electron injection layer 8 by a predetermined method.
- the other electrode 5 is provided as a cathode.
- the other electrode 5 is preferably a reflective electrode that reflects light to the one electrode 2.
- the other electrode 5 is an electrode having optical transparency.
- the other electrode 5 can be formed on the electron injection layer 8. If the other electrode 5 and the electron injection layer 8 are not laminated at the same time as described above, but only the electron injection layer 8 is formed on the light emitting layer 4 in advance, the other electrode is formed, for example, by vapor deposition or lamination. 5 may be formed on the electron injection layer 8. Moreover, in this embodiment, in order to form the two organic layers of the hole injection layer and the light emitting layer, imprinting the two organic layers at the same time forms a periodic structure in all the organic layers.
- the periodic structure may be formed in only two of the three or more layers.
- imprinting may be performed so that the convex portions of the mold reach only two layers near the mold.
- the hole injection layer 3 and the light emitting layer 4 are processed at once by the imprint method, thereby forming a periodic structure in the stacked body 7 of the hole injection layer 3 and the light emitting layer 4.
- a curable resin layer having irregularities formed on the surface is formed on a support substrate, and a plurality of layers are formed on the curable resin layer.
- two or more organic layers were formed.
- the desired periodic structure can be formed in the light emitting layer 4).
- the pair of electrodes is formed with irregularities, but in this embodiment, the periodicity is obtained by processing two or more organic layers (in this embodiment, the hole injection layer 3 and the light emitting layer 4).
- one electrode 2 disposed closer to the support substrate can be formed in a flat plate shape, and the other electrode can also be formed in a flat plate shape. Thereby, a uniform electric field can be generated between the electrodes.
- the periodic structure is formed in the laminate 7 including only the hole injection layer and the light emitting layer.
- the laminate including the hole injection layer, the hole transport layer, and the light emitting layer is formed by the above-described imprint method.
- a periodic structure may be formed.
- FIG. 3 schematically shows a method for manufacturing an organic EL device according to another embodiment of the present invention. Since the manufacturing method of this embodiment is different from the above-described embodiment only in the formation method of the electron injection layer 8 and the other electrode 5, the same reference numerals are assigned to the corresponding portions, and redundant description is omitted.
- the electron injection layer is formed by, for example, a vapor deposition method.
- the electron injection layer 8 is slightly formed not only on the surface of the laminate 7 of the hole injection layer 3 and the light emitting layer 4 but also in the recess 11 of the laminate 7. Is done.
- the other electrode is formed. As shown in FIG. 3 (6), the other electrode is laminated on the sealing member 10, and the other electrode 5 is laminated on the electron injection layer 8 by laminating the substrate on which the other electrode 5 is laminated. 5 can be formed.
- the other electrode 5 is formed by a vapor deposition method, the other electrode 5 is formed not only on the electron injection layer 8 but also in the recess 11 of the laminate 7.
- the organic EL element of each embodiment described above is usually provided with a sealing member for sealing the organic EL element.
- the sealing member 10 can be formed simultaneously with the other electrode 5 when the other electrode 5 is formed by a laminating method.
- the organic EL element of each of the above-described embodiments is preferably formed with irregularities on, for example, a surface from which light is emitted (that is, an interface with air).
- a surface from which light is emitted that is, an interface with air.
- it is preferable to form unevenness on the surface of the support substrate in a bottom emission type organic EL element, it is preferable to form unevenness on the surface of the support substrate, and in a top emission type organic EL element, it is preferable to form unevenness on the surface of the sealing member.
- irregularities for example, it is preferable to form irregularities having an elevation difference of 0.1 ⁇ m or more and 0.2 mm or less. By forming such irregularities, total reflection that occurs at the interface between the substrate and air or the interface between the sealing member and air can be suppressed.
- a film having irregularities formed on the surface may be bonded to the support substrate or the sealing member.
- the absolute value of the difference in refractive index between the adhesive layer and two members sandwiching the adhesive layer is 0.2 or less.
- the organic EL element can include a predetermined layer in addition to the light emitting layer between the pair of electrodes as described above.
- Examples of the layer provided between the cathode and the light emitting layer include an electron injection layer, an electron transport layer, and a hole blocking layer.
- the layer in contact with the cathode is referred to as an electron injection layer, and the layer excluding this electron injection layer is referred to as an electron transport layer.
- the electron injection layer has a function of improving the electron injection efficiency from the cathode.
- the electron transport layer has a function of improving electron injection from the layer in contact with the surface on the cathode side.
- the hole blocking layer has a function of blocking hole transport. In the case where the electron injection layer and / or the electron transport layer have a function of blocking hole transport, these layers may also serve as the hole blocking layer.
- the hole blocking layer has a function of blocking hole transport makes it possible, for example, to produce an element that allows only hole current to flow, and confirm the blocking effect by reducing the current value.
- Examples of the layer provided between the anode and the light emitting layer include a hole injection layer, a hole transport layer, and an electron block layer.
- the layer in contact with the anode is called a hole injection layer, and the layers other than the hole injection layer are positive. It is called a hole transport layer.
- the hole injection layer has a function of improving the hole injection efficiency from the anode.
- the hole transport layer has a function of improving hole injection from a layer in contact with the surface on the anode side.
- the electron blocking layer has a function of blocking electron transport. In the case where the hole injection layer and / or the hole transport layer has a function of blocking electron transport, these layers may also serve as an electron blocking layer.
- the electron blocking layer has a function of blocking electron transport makes it possible, for example, to produce an element that allows only electron current to flow, and confirm the blocking effect by reducing the current value.
- the electron injection layer and the hole injection layer may be collectively referred to as a charge injection layer, and the electron transport layer and the hole transport layer may be collectively referred to as a charge transport layer.
- an organic layer including these hole injection layer, hole transport layer, electron block layer, light emitting layer, hole block layer, electron transport layer, electron injection layer, Various additives may be added to form a desired shape by the imprint method.
- an additive can be added in the range which does not inhibit the function of each layer. For example, when the viscosity of the layer to be imprinted is low, it is difficult to accurately transfer the shape of the mold, but a predetermined additive may be added to increase the viscosity of the layer to be imprinted.
- the viscosity of the layer to be imprinted can be increased, the shape of the mold can be accurately transferred, and a periodic structure having a desired shape can be formed. Further, when such an easily vaporizing additive is used, it is possible to remove the additive by, for example, heating a predetermined layer after forming an imprint.
- the layer having a periodic structure that is periodically arranged two-dimensionally preferably contains a polymer when forming a shape by the imprint method.
- the polymer means a compound having a polystyrene-equivalent number average molecular weight of 10 3 to 10 8 .
- An example of a layer structure that can be taken by the organic EL element of the present embodiment is shown below.
- a) Anode / hole injection layer / light emitting layer / cathode b) Anode / hole injection layer / light emitting layer / electron injection layer / cathode c) Anode / hole injection layer / light emitting layer / electron transport layer / cathode d) Anode / Hole injection layer / light emitting layer / electron transport layer / electron injection layer / cathode e) anode / hole transport layer / light emitting layer / cathode f) anode / hole transport layer / light emitting layer / electron injection layer / cathode g) Anode / hole transport layer / light emitting layer / electron transport layer / cathode h) anode / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode i
- the organic EL element of the present embodiment may have two or more light emitting layers.
- structural unit A when the laminate sandwiched between the anode and the cathode is referred to as “structural unit A”, the configuration of an organic EL element having two light emitting layers is obtained.
- the layer structure shown in the following p) can be mentioned. Note that the two (structural unit A) layer structures may be the same or different.
- Examples of the structure of the organic EL element include the layer structure shown in the following r). q) Anode / (structural unit B) x / (structural unit A) / cathode
- the symbol “x” represents an integer of 2 or more
- (structural unit B) x is a stack in which the structural unit B is stacked in x stages. Represents the body.
- a plurality of (structural units B) may have the same or different layer structure.
- the charge generation layer is a layer that generates holes and electrons by applying an electric field.
- Examples of the charge generation layer include a thin film made of vanadium oxide, indium tin oxide (Indium Tin Oxide), molybdenum oxide, or the like.
- both the hole injection layer and the light emitting layer, or only the hole injection layer have a periodic structure has been described.
- the predetermined layer, the predetermined two layers, or more layers may have a periodic structure.
- ⁇ Support substrate> As the support substrate, for example, glass, plastic, polymer film, silicon plate, and a laminate of these are used.
- substrate which shows a light transmittance is used in a bottom emission type organic EL element, you may use an opaque board
- the support substrate preferably has a high gas barrier property, but in order to further improve the gas barrier property, for example, an inorganic layer made of metal, metal oxide, metal nitride, metal carbide, metal oxynitride, and the like, A layer in which an organic layer is laminated or an inorganic-organic hybrid layer may be formed on at least one surface of the support substrate.
- the pair of electrodes includes an anode and a cathode.
- anode a thin film of metal oxide, metal sulfide or metal can be used.
- a thin film made of indium oxide, zinc oxide, tin oxide, ITO, indium zinc oxide (Indium Zinc Oxide: abbreviation IZO), gold, platinum, silver, copper, or the like is used.
- ITO, IZO Or a thin film made of tin oxide is preferably used.
- an organic transparent conductive film such as polyaniline or a derivative thereof, polythiophene or a derivative thereof may be used.
- the cathode those having a small work function, easy electron injection into the light emitting layer and high electrical conductivity are preferable, and alkali metals, alkaline earth metals, transition metals, Group 13 metals of the periodic table, and the like are used. it can.
- the cathode material include lithium, sodium, potassium, rubidium, cesium, beryllium, magnesium, calcium, strontium, barium, aluminum, scandium, vanadium, zinc, yttrium, indium, cerium, samarium, europium, terbium, ytterbium, and the like.
- An alloy or graphite or a graphite intercalation compound is used.
- the cathode may be composed of a laminate in which two or more layers are laminated. An electron injection layer described later may be used as the cathode.
- an electrode exhibiting optical transparency is used as one of the pair of electrodes.
- the above-described metal thinned to such an extent that visible light can be transmitted, or a thin film made of ITO, IZO, or tin oxide can be used as an electrode exhibiting light transmittance.
- the film thickness of the anode and the cathode is appropriately set in consideration of required characteristics and process simplicity, and is, for example, 10 nm to 10 ⁇ m, preferably 20 nm to 1 ⁇ m, and more preferably 50 nm to 500 nm.
- Examples of methods for producing the anode and the cathode include a vacuum deposition method, a sputtering method, an ion plating method, a plating method, a method for thermocompression bonding of a metal thin film, and a lamination method.
- the hole injection layer As the hole injection material constituting the hole injection layer, phenylamine, starburst amine, phthalocyanine, vanadium oxide, molybdenum oxide, ruthenium oxide, aluminum oxide, etc., amorphous carbon, polyaniline, polythiophene derivatives Etc. As described above, the hole injection layer can be formed by applying an ink containing the exemplified materials by a predetermined application method and then drying the ink.
- the solvent for the ink examples include chlorine solvents such as chloroform, methylene chloride, dichloroethane, ether solvents such as tetrahydrofuran, aromatic hydrocarbon solvents such as toluene and xylene, ketone solvents such as acetone and methyl ethyl ketone, ethyl acetate, Listed are ester solvents such as butyl acetate and ethyl cellosolve acetate, and water.
- chlorine solvents such as chloroform, methylene chloride, dichloroethane
- ether solvents such as tetrahydrofuran
- aromatic hydrocarbon solvents such as toluene and xylene
- ketone solvents such as acetone and methyl ethyl ketone, ethyl acetate
- ester solvents such as butyl acetate and ethyl cellosolve acetate, and water.
- predetermined coating methods spin coating method, casting method, micro gravure coating method, gravure coating method, bar coating method, roll coating method, wire bar coating method, dip coating method, spray coating method, screen printing method, flexographic printing method , Offset printing method, inkjet printing method and the like.
- ⁇ Hole transport layer> As the hole transport material constituting the hole transport layer, polyvinylcarbazole or a derivative thereof, polysilane or a derivative thereof, a polysiloxane derivative having an aromatic amine in a side chain or a main chain, a pyrazoline derivative, an arylamine derivative, a stilbene derivative, Triphenyldiamine derivative, polyaniline or derivative thereof, polythiophene or derivative thereof, polyarylamine or derivative thereof, polypyrrole or derivative thereof, poly (p-phenylene vinylene) or derivative thereof, or poly (2,5-thienylene vinylene) or And derivatives thereof.
- the hole transport material constituting the hole transport layer polyvinylcarbazole or a derivative thereof, polysilane or a derivative thereof, a polysiloxane derivative having an aromatic amine in a side chain or a main chain, a pyrazoline derivative, an arylamine derivative, a stilbene derivative, Triphenyldiamine
- hole transport material polyvinyl carbazole or a derivative thereof, polysilane or a derivative thereof, a polysiloxane derivative having an aromatic amine compound group in a side chain or a main chain, polyaniline or a derivative thereof
- Polymeric hole transport materials such as polythiophene or derivatives thereof, polyarylamine or derivatives thereof, poly (p-phenylene vinylene) or derivatives thereof, or poly (2,5-thienylene vinylene) or derivatives thereof are preferable, and polyvinyl More preferred are carbazole or derivatives thereof, polysilane or derivatives thereof, polysiloxane derivatives having an aromatic amine in the side chain or main chain, and the like.
- a low-molecular hole transport material it is preferably used by being dispersed in a polymer binder.
- a method for forming a hole transport layer in the case of a low molecular hole transport material, a method of forming a film from a mixed solution with a polymer binder can be mentioned. The method by the film-forming from can be mentioned.
- any solvent capable of dissolving a hole transport material may be used.
- Chlorine solvents such as chloroform, methylene chloride and dichloroethane, ether solvents such as tetrahydrofuran, aromatics such as toluene and xylene.
- ether solvents such as tetrahydrofuran
- aromatics such as toluene and xylene.
- hydrocarbon solvents such as acetone and methyl ethyl ketone
- ester solvents such as ethyl acetate, butyl acetate, and ethyl cellosolve acetate.
- polymer binder to be mixed those not extremely disturbing charge transport are preferable, and those having weak absorption with respect to visible light are suitably used.
- the polymer binder include polycarbonate, polyacrylate, polymethyl acrylate, polymethyl methacrylate, polystyrene, polyvinyl chloride, and polysiloxane.
- the film thickness of the hole transport layer is, for example, 1 nm to 1 ⁇ m, preferably 2 nm to 500 nm, and more preferably 5 nm to 200 nm.
- the light emitting layer includes an organic substance that emits fluorescence and / or phosphorescence, or an organic substance and a dopant.
- the dopant is added for the purpose of, for example, improving luminous efficiency or changing the emission wavelength.
- the organic substance used for the light emitting layer may be either a low molecular compound or a high molecular compound. Examples of the light emitting material constituting the light emitting layer include the following.
- the solubility to a solvent is generally higher in a polymer compound, when the light emitting layer is formed by a coating method, the light emitting layer preferably contains a polymer compound.
- dye-based light emitting materials include cyclopentamine derivatives, tetraphenylbutadiene derivative compounds, triphenylamine derivatives, oxadiazole derivatives, pyrazoloquinoline derivatives, distyrylbenzene derivatives, distyrylarylene derivatives, pyrrole derivatives, thiophenes.
- examples thereof include a ring compound, a pyridine ring compound, a perinone derivative, a perylene derivative, an oligothiophene derivative, an oxadiazole dimer, and a pyrazoline dimer.
- metal complex-based light emitting materials include rare earth metals such as Tb, Eu, and Dy, or Al, Zn, Be, Ir, Pt, and the like as a central metal, and oxadiazole, thiadiazole, phenylpyridine, and phenylbenzimidazole.
- Metal complexes having a quinoline structure as a ligand such as iridium complexes, platinum complexes, and other metal complexes having light emission from a triplet excited state, aluminum quinolinol complexes, benzoquinolinol beryllium complexes, benzoxazolids. Examples include ruzinc complexes, benzothiazole zinc complexes, azomethylzinc complexes, porphyrin zinc complexes, and phenanthroline europium complexes.
- polymer-based light-emitting materials include polyparaphenylene vinylene derivatives, polythiophene derivatives, polyparaphenylene derivatives, polysilane derivatives, polyacetylene derivatives, polyfluorene derivatives, and polyvinylcarbazole derivatives, and the above-described dye-based light-emitting materials and metal complex systems. And a material obtained by polymerizing the light emitting material.
- examples of materials that emit blue light include distyrylarylene derivatives, oxadiazole derivatives, and polymers thereof, polyvinylcarbazole derivatives, polyparaphenylene derivatives, and polyfluorene derivatives. Of these, polymer materials such as polyvinyl carbazole derivatives, polyparaphenylene derivatives, and polyfluorene derivatives are preferred.
- Examples of materials that emit green light include quinacridone derivatives, coumarin derivatives, and polymers thereof, polyparaphenylene vinylene derivatives, polyfluorene derivatives, and the like. Of these, polymer materials such as polyparaphenylene vinylene derivatives and polyfluorene derivatives are preferred.
- Examples of materials that emit red light include coumarin derivatives, thiophene ring compounds, and polymers thereof, polyparaphenylene vinylene derivatives, polythiophene derivatives, polyfluorene derivatives, and the like.
- polymer materials such as polyparaphenylene vinylene derivatives, polythiophene derivatives, and polyfluorene derivatives are preferable.
- a material that emits white light a mixture of materials that emit light of the above-described blue, green, and red colors, or a component that becomes a material that emits light of each color as a monomer, and a polymer obtained by polymerizing this as a material are used. May be.
- an element that emits white light as a whole may be realized by stacking light emitting layers formed using materials that emit light of each color.
- Examples of the dopant material include perylene derivatives, coumarin derivatives, rubrene derivatives, quinacridone derivatives, squarylium derivatives, porphyrin derivatives, styryl dyes, tetracene derivatives, pyrazolone derivatives, decacyclene, phenoxazone, and the like. Note that the thickness of such a light emitting layer is usually about 2 nm to 2000 nm.
- Examples of the method for forming a light emitting layer containing an organic substance include a method of applying a solution containing a light emitting material to the surface of a substrate, a vacuum deposition method, a laminating method, and the like.
- Specific examples of the solvent used for the film formation from the solution include the same solvents as those used as the solvent for dissolving the hole injection material when forming the hole injection layer from the above solution.
- an electron transport material constituting the electron transport layer an oxadiazole derivative, anthraquinodimethane or a derivative thereof, benzoquinone or a derivative thereof, naphthoquinone or a derivative thereof, anthraquinone or a derivative thereof, tetracyanoanthraquinodimethane or a derivative thereof, Fluorenone derivatives, diphenyldicyanoethylene or derivatives thereof, diphenoquinone derivatives, or metal complexes of 8-hydroxyquinoline or derivatives thereof, polyquinoline or derivatives thereof, polyquinoxaline or derivatives thereof, polyfluorene or derivatives thereof, and the like can be given.
- electron transport materials include oxadiazole derivatives, benzoquinone or derivatives thereof, anthraquinones or derivatives thereof, metal complexes of 8-hydroxyquinoline or derivatives thereof, polyquinoline or derivatives thereof, polyquinoxaline or derivatives thereof, polyfluorenes Or a derivative thereof, preferably 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole, benzoquinone, anthraquinone, tris (8-quinolinol) aluminum, and polyquinoline. preferable.
- a film formation method of the electron transport layer in the case of a low molecular electron transport material, a vacuum deposition method from a powder, or a method by film formation from a solution or a molten state can be exemplified, and in a polymer electron transport material, Examples thereof include a method by film formation from a solution or a molten state. In film formation from a solution or a molten state, a polymer binder may be further used in combination. Examples of the method for forming an electron transport layer from a solution include the same film formation method as the method for forming a hole transport layer from a solution described above.
- the film thickness of the electron transport layer the optimum value varies depending on the material to be used, and it may be selected so that the drive voltage and the light emission efficiency are appropriate values, and at least a thickness that does not cause pinholes is required. If it is too thick, the drive voltage of the element becomes high, which is not preferable. Accordingly, the thickness of the electron transport layer is, for example, 1 nm to 1 ⁇ m, preferably 2 nm to 500 nm, and more preferably 5 nm to 200 nm.
- the electron injecting material constituting the electron injecting layer may be an alkali metal, an alkaline earth metal, an alloy containing one or more of the above metals, or an oxide, halide or carbonate of the above metal, depending on the type of the light emitting layer. Or a mixture of the aforementioned substances.
- Alkali metals or their oxides, halides and carbonates include lithium, sodium, potassium, rubidium, cesium, lithium oxide, lithium fluoride, sodium oxide, sodium fluoride, potassium oxide, potassium fluoride, rubidium oxide, fluorine. Examples thereof include rubidium chloride, cesium oxide, cesium fluoride, and lithium carbonate.
- alkaline earth metals or oxides, halides and carbonates thereof include magnesium, calcium, barium, strontium, magnesium oxide, magnesium fluoride, calcium oxide, calcium fluoride, barium oxide, barium fluoride, Examples include strontium oxide, strontium fluoride, and magnesium carbonate.
- the electron injection layer may be a laminate in which two or more layers are laminated. Specific examples of the laminate include LiF / Ca.
- the electron injection layer is formed by vapor deposition, sputtering, printing, or the like.
- the thickness of the electron injection layer is preferably about 1 nm to 1 ⁇ m.
- sealing member for example, an inorganic layer made of metal, metal oxide, metal nitride, metal carbide, metal oxynitride or the like, a layer in which the inorganic layer and the organic layer are laminated, or an inorganic-organic hybrid layer is used. it can.
- the inorganic layer is preferably stable in the air, specifically, silica, alumina, titania, indium oxide, tin oxide, titanium oxide, zinc oxide, indium tin oxide, aluminum nitride, silicon nitride, silicon carbide, Examples thereof include a thin film layer of silicon oxynitride and a combination thereof, more preferably a thin film layer made of aluminum nitride, silicon nitride, or silicon oxynitride, and still more preferably a thin film layer of silicon oxynitride.
- the organic EL element described above can be suitably used for a curved or flat illumination device, for example, a planar light source used as a light source of a scanner, and a display device.
- a light emitting layer is provided as at least one organic layer of two or more organic layers, and the laminate 7 of the hole injection layer 3 and the light emitting layer 4 is composed of two layers. It has a dimensional periodic structure. Since such a periodic structure is formed in the stacked body 7 of the hole injection layer 3 and the light emitting layer 4, light traveling at an angle at which total reflection occurs at the electrode (light whose incident angle to the electrode is larger than the critical angle). For example, the traveling direction of light having an incident angle on the electrode near 90 ° can be tilted in a direction perpendicular to the electrode. As a result, total reflection occurring at the electrode can be suppressed, and light can be emitted efficiently.
- the organic layer having two or more layers has a periodic structure
- the organic layer having the periodic structure in this embodiment, in this embodiment, in this embodiment, in this embodiment, in this embodiment, in this embodiment, in the laminated body 7) of the hole injection layer 3 and the light emitting layer 4
- a recess 11 is formed that becomes a void.
- the refractive index between the stacked body 7 of the hole injection layer 3 and the light emitting layer 4 and the inside of the recess 11 is obtained. And the function as a diffraction grating can be sufficiently exhibited.
- the stacked body 7 of the hole injection layer 3 and the light emitting layer 4 is disposed in a portion excluding the recess 11.
- the hole injection is performed in the region where the recess 11 is formed.
- a layered body 7 of the layer 3 and the light emitting layer 4 may be formed, and a void may be provided in a region where the layered body 7 of the hole injection layer 3 and the light emitting layer 4 is formed in this embodiment.
- Even the periodic structure having such a configuration exhibits a function as a diffraction grating.
- the stacked body 7 of the hole injection layer 3 and the light emitting layer 4 is formed as a plurality of cylinders, but the hole injection layer 3 and the light emitting layer 4 are formed in a portion excluding the recess 11.
- the configuration of the present embodiment in which the laminated body 7 is disposed is preferable because the mechanical strength is increased.
- a void is formed in the recess 11 formed in the stacked body 7 of the hole injection layer 3 and the light emitting layer 4, but the stacked body 7 of the hole injection layer 3 and the light emitting layer 4 is refracted. Insulating materials having different rates may be filled in the recesses 11 formed in the stacked body 7 of the hole injection layer 3 and the light emitting layer 4, and a flat electron injection layer 8 may be provided thereon.
- FIG. 4 is a diagram schematically showing a mold.
- FIG. 4A shows a top view of the mold
- FIG. 4B schematically shows a cross-sectional view of the mold.
- the size of the mold is 20 mm ⁇ 20 mm in plan view, and a plurality of columnar structures are formed in a pattern at the center of the mold.
- the size of the region where the cylindrical structure is formed is 10 mm ⁇ 10 mm in the center of the mold in plan view.
- the diameter Lb is 150 nm and the height Ld is 160 nm.
- the distance La between the central axes of adjacent cylinders is 300 nm.
- the crossing angle ⁇ between the vertical stripes and the horizontal stripes indicated by two-dot chain lines is 60 °.
- An interval Lc between adjacent cylinders is 150 nm.
- a substrate on which a 20 mm ⁇ 50 mm ITO was patterned at the center on a 50 mm ⁇ 50 mm glass substrate was ultrasonically cleaned in acetone, isopropyl alcohol, and ultrapure water, and dried by nitrogen blowing.
- the coated substrate and the mold obtained above are set in a nanoimprint apparatus (AB4 manufactured by Obducat), and thermally imprinted at 60 ° C. for 5 minutes at a pressure of 60 bar. It transferred at once to the laminate of the injection layer and the light emitting layer. After imprinting, the substrate was released from the mold. Further, after imprinting, the imprinted substrate was heat-treated at 100 ° C.
- ⁇ Evaluation of structure> The sample in which the laminate of the hole injection layer and the light emitting layer is formed on the glass substrate as described above is irradiated with UV light having a wavelength of 254 nm from the light emitting layer side, and PL (photoluminescence) light emission is emitted from the glass substrate side. The emitted blue light was measured with an integrating sphere.
- the manufactured sample includes a region (A) in which a periodic structure is formed in the stacked body of the hole injection layer and the light emitting layer, and a region (B) in which the periodic structure is not formed in the stacked body. That is, the region (B) is a region where a flat hole injection layer and a flat light emitting layer are stacked on a glass substrate.
- the PL light intensity measured by the integrating sphere when the region (B) is irradiated with ultraviolet light is “1”
- the PL light intensity measured by the integrating sphere when the region (A) is irradiated with ultraviolet light is 1.9.
- Al and Ba are sequentially deposited with a thickness of 100 nm and 5 nm, respectively, with a vacuum vapor deposition machine to form a cathode and an electron injection layer.
- the metal deposition starts after the degree of vacuum reaches 2.5 ⁇ 10 ⁇ 4 Pa or less.
- a photo-curable sealant is applied around the sealing glass substrate with a dispenser.
- a sealing glass on which a cathode and an electron injection layer are formed is laminated on a substrate on which an ITO, a hole injection layer, and a light emitting layer are formed. Lamination is performed in a nitrogen atmosphere. Furthermore, it seals by hardening
- the light extraction efficiency is improved as in the PL evaluation described above.
- the present invention can be used for manufacturing an organic EL device.
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Abstract
Description
一対の電極のうちの一方の電極を形成する工程と、
前記発光層の厚み方向に略垂直な方向に進行する光の進行方向を前記厚み方向に傾ける前記周期構造を有する二層以上の有機層を形成する工程と、
一対の電極のうちの他方の電極を形成する工程とを含み、
二層以上の有機層を形成する工程では、
前記有機層となる平板状の層を二層以上積層した後、
さらに前記二層以上積層した前記平板状の層に、前記発光層の厚み方向に垂直な平面において二次元的に周期的に配置される前記周期構造をインプリント法によって形成する有機エレクトロルミネッセンス素子の製造方法に関する。
本発明は、(2)前記二次元的に周期的に配置される周期構造を有する有機層が高分子化合物を含む有機層である(1)記載の有機エレクトロルミネッセンス素子の製造方法に関する。
本発明は、(3)(1)又は(2)記載の製造方法により作製された有機エレクトロルミネッセンス素子を備える表示装置に関する。
本発明は、(1)又は(2)記載の製造方法により作製された有機エレクトロルミネッセンス素子を備える照明装置に関する。
一方の電極2は支持基板6上に設けられる。この一方の電極2は両主面が平坦であって、平板状である。すなわち一方の電極2には表面に凹凸が形成されていない。前述したボトムエミッション型の有機EL素子では、一方の電極2には光透過性を示す電極が用いられる。またトップエミッション型の有機EL素子では一方の電極2には光を他方の電極5に向けて反射する反射電極を用いることが好ましい。
二層以上の有機層を形成する工程では、前記有機層となる平板状の層を二層以上積層した後、さらに前記発光層の厚み方向に垂直な平面において二次元的に周期的に配置される周期構造を、前記二層以上積層した前記平板状の層に、インプリント法によって形成することにより、前記発光層の厚み方向に略垂直な方向に進行する光の進行方向を前記厚み方向に傾ける周期構造を有する有機層を形成する。
次に電子注入層8上に所定の方法で他方の電極5を形成する。本実施形態では他方の電極5は陰極として設けられる。なお前述したボトムエミッション型の有機EL素子では他方の電極5には、光を一方の電極2に反射する反射電極を用いることが好ましい。またトップエミッション型の有機EL素子では他方の電極5には光透過性を示す電極が用いられる。
a)陽極/正孔注入層/発光層/陰極
b)陽極/正孔注入層/発光層/電子注入層/陰極
c)陽極/正孔注入層/発光層/電子輸送層/陰極
d)陽極/正孔注入層/発光層/電子輸送層/電子注入層/陰極
e)陽極/正孔輸送層/発光層/陰極
f)陽極/正孔輸送層/発光層/電子注入層/陰極
g)陽極/正孔輸送層/発光層/電子輸送層/陰極
h)陽極/正孔輸送層/発光層/電子輸送層/電子注入層/陰極
i)陽極/正孔注入層/正孔輸送層/発光層/陰極
j)陽極/正孔注入層/正孔輸送層/発光層/電子注入層/陰極
k)陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/陰極
l)陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/電子注入層/陰極
m)陽極/発光層/電子注入層/陰極
n)陽極/発光層/電子輸送層/陰極
o)陽極/発光層/電子輸送層/電子注入層/陰極
(ここで、記号「/」は、記号「/」を挟む各層が隣接して積層されていることを示す。以下同じ。)
本実施の形態の有機EL素子は2層以上の発光層を有していてもよい。上記a)~o)の層構成のうちのいずれか1つにおいて、陽極と陰極とに挟持された積層体を「構造単位A」とすると、2層の発光層を有する有機EL素子の構成として、下記p)に示す層構成を挙げることができる。なお2つある(構造単位A)の層構成は互いに同じでも、異なっていてもよい。
p)陽極/(構造単位A)/電荷発生層/(構造単位A)/陰極
また「(構造単位A)/電荷発生層」を「構造単位B」とすると、3層以上の発光層を有する有機EL素子の構成として、下記r)に示す層構成を挙げることができる。
q)陽極/(構造単位B)x/(構造単位A)/陰極
なお記号「x」は、2以上の整数を表し、(構造単位B)xは、構造単位Bがx段積層された積層体を表す。また複数ある(構造単位B)の層構成は同じでも、異なっていてもよい。
支持基板としてはたとえばガラス、プラスチック、高分子フィルム、及びシリコン板、並びにこれらを積層したものなどが用いられる。なおボトムエミッション型の有機EL素子では光透過性を示す基板が用いられるが、トップエミッション型の有機EL素子では、不透明の基板を用いてもよい。
一対の電極は陽極と陰極によって構成される。
正孔注入層を構成する正孔注入材料としては、フェニルアミン系、スターバースト型アミン系、フタロシアニン系、酸化バナジウム、酸化モリブデン、酸化ルテニウム、酸化アルミニウム等の酸化物、アモルファスカーボン、ポリアニリン、ポリチオフェン誘導体などが挙げられる。正孔注入層は、前述したように、例示した材料を含むインキを所定の塗布法で塗布成膜し、さらに乾燥することによって形成することができる。
正孔輸送層を構成する正孔輸送材料としては、ポリビニルカルバゾール若しくはその誘導体、ポリシラン若しくはその誘導体、側鎖若しくは主鎖に芳香族アミンを有するポリシロキサン誘導体、ピラゾリン誘導体、アリールアミン誘導体、スチルベン誘導体、トリフェニルジアミン誘導体、ポリアニリン若しくはその誘導体、ポリチオフェン若しくはその誘導体、ポリアリールアミン若しくはその誘導体、ポリピロール若しくはその誘導体、ポリ(p-フェニレンビニレン)若しくはその誘導体、又はポリ(2,5-チエニレンビニレン)若しくはその誘導体などが挙げられる。
発光層は、蛍光及び/又は燐光を発光する有機物、若しくは該有機物と、ドーパントとを含んで構成される。ドーパントは、たとえば発光効率の向上や発光波長を変化させるなどの目的で付加される。発光層に用いられる有機物としては、低分子化合物又は高分子化合物のいずれでもよい。発光層を構成する発光材料としては、例えば以下のものを挙げられる。なお溶媒への溶解性は高分子化合物の方が一般的に高いため、塗布法で発光層を形成する場合には発光層は高分子化合物を含むことが好ましい。
電子輸送層を構成する電子輸送材料としては、オキサジアゾール誘導体、アントラキノジメタン若しくはその誘導体、ベンゾキノン若しくはその誘導体、ナフトキノン若しくはその誘導体、アントラキノン若しくはその誘導体、テトラシアノアンスラキノジメタン若しくはその誘導体、フルオレノン誘導体、ジフェニルジシアノエチレン若しくはその誘導体、ジフェノキノン誘導体、又は8-ヒドロキシキノリン若しくはその誘導体の金属錯体、ポリキノリン若しくはその誘導体、ポリキノキサリン若しくはその誘導体、ポリフルオレン若しくはその誘導体等を挙げることができる。
電子注入層を構成する電子注入材料としては、発光層の種類に応じて、アルカリ金属、アルカリ土類金属、又は前記金属を1種類以上含む合金、又は前記金属の酸化物、ハロゲン化物及び炭酸塩、又は前記物質の混合物などが挙げられる。アルカリ金属又はその酸化物、ハロゲン化物、炭酸塩としては、リチウム、ナトリウム、カリウム、ルビジウム、セシウム、酸化リチウム、フッ化リチウム、酸化ナトリウム、フッ化ナトリウム、酸化カリウム、フッ化カリウム、酸化ルビジウム、フッ化ルビジウム、酸化セシウム、フッ化セシウム、炭酸リチウム等が挙げられる。また、アルカリ土類金属又はその酸化物、ハロゲン化物、炭酸塩の例としては、マグネシウム、カルシウム、バリウム、ストロンチウム、酸化マグネシウム、フッ化マグネシウム、酸化カルシウム、フッ化カルシウム、酸化バリウム、フッ化バリウム、酸化ストロンチウム、フッ化ストロンチウム、炭酸マグネシウム等が挙げられる。電子注入層は、2層以上を積層した積層体であってもよい。積層体の具体例としては、LiF/Caなどが挙げられる。電子注入層は、蒸着法、スパッタリング法、印刷法等によって形成される。電子注入層の膜厚としては、1nm~1μm程度が好ましい。
封止部材としてはたとえば金属、金属酸化物、金属窒化物、金属炭化物、金属酸窒化物などから成る無機層、前記無機層と有機層とを積層した層又は無機-有機ハイブリッド層を用いることができる。無機層としては、空気中で安定なものが好ましく、具体的にはシリカ、アルミナ、チタニア、酸化インジウム、酸化錫、酸化チタン、酸化亜鉛、インジウム錫酸化物、窒化アルミニウム、窒化ケイ素、炭化ケイ素、酸窒化ケイ素、及びそれらの組合せの薄膜層が挙げられ、より好ましくは窒化アルミニウム、窒化ケイ素、酸窒化ケイ素からなる薄膜層であり、さらに好ましくは酸窒化ケイ素の薄膜層である。
電子線描画(EB描画)装置を用いて、複数本の円柱をSi製の部材に二次元的な周期でパターン形成し、Si製の鋳型12を作製した。図4は鋳型を模式的に示す図である。図4(1)に鋳型の上面図を示し、図4(2)に鋳型の断面図を模式的に示す。鋳型のサイズは平面視で20mm×20mmであり、鋳型の中央部に複数本の円柱構造をパターン形成している。円柱構造を形成した領域のサイズは平面視で鋳型の中央10mm×10mmである。各円柱のサイズは、径Lbが150nmであり、高さLdが160nmである。隣り合う円柱の中心軸間の距離Laは300nmである。またそれぞれ二点鎖線で示す縦縞と横縞の交差角θは60°である。隣り合う円柱と円柱との間隔Lcは150nmである。この鋳型を用いてインプリントすることにより、正孔注入層と発光層とからなる積層体に径150nmの円柱状の穴が150nmの間隔で形成される。
<二次元周期構造物の作製>
50mmx50mmのガラス基板上の中央部に20mmx50mmのITOをパターニングした基板を、アセトン、イソプロピルアルコール、超純水中で超音波洗浄し、窒素ブローで乾燥した。UVオゾン処理を5秒間行ったITOガラス基板上に、0.5%のグリセロールを添加したポリ(エチレンジオキシチオフェン)/ポリスチレンスルホン酸(スタルク社製、AI4083)の懸濁液を、スピンコーターによって塗布し、200℃で5分間加熱してから、再度その上に、0.5%のグリセロールを添加したポリ(エチレンジオキシチオフェン)/ポリスチレンスルホン酸(スタルク社製、AI4083)の懸濁液を、スピンコーターによって塗布し、合計膜厚が155nmの正孔輸送層を得た。続いて青色発光材料であるLumation BP361(SUMATION製)の濃度が1質量%のキシレン溶液をスピンコーターを用いて正孔輸送層上に塗布した。膜厚は80nmになるようにスピンコート条件を調整した。
次に上記で得られた塗布基板と鋳型を、ナノインプリント装置(Obducat社製AB4)にセットし、60barsの圧力で、180℃5分間熱インプリントし、鋳型の形状を塗布基板中央部分の正孔注入層と発光層の積層体に一度に転写した。インプリント後、鋳型から基板を離型した。さらにインプリント後、インプリントした基板を100℃で加熱処理した。
<構造物の評価>
上記のように正孔注入層と発光層との積層体をガラス基板上に形成したサンプルに、波長が254nmの紫外線を発光層側から照射し、PL(フォトルミネッセンス)発光として、ガラス基板側から出射する青色の光を積分球で測定した。
<有機EL素子の作製>
封止ガラス基板上に真空蒸着機でAl、Baをそれぞれ100nm、5nmの厚みで順次蒸着し、陰極と電子注入層を形成する。なお金属の蒸着は、真空度が2.5×10-4Pa以下に到達した後に開始する。
作製した素子では、先に示したPL評価と同様に、光取り出し効率は向上する。
2 一方の電極
3 正孔注入層
4 発光層
5 他方の電極
6 支持基板
7 正孔注入層と発光層との積層体
8 電子注入層
9 鋳型
10 封止部材
11 凹み
12 鋳型
Claims (4)
- 一対の電極と、該電極間に設けられる二層以上の有機層とを備え、該二層以上の有機層が発光層を含む有機エレクトロルミネッセンス素子の製造方法であって、
一対の電極のうちの一方の電極を形成する工程と、
前記発光層の厚み方向に略垂直な方向に進行する光の進行方向を前記厚み方向に傾ける前記周期構造を有する該二層以上の有機層を形成する工程と、
一対の電極のうちの他方の電極を形成する工程とを含み、
該二層以上の有機層を形成する工程では、
前記有機層となる平板状の層を二層以上積層した後、
さらに前記二層以上積層した前記平板状の層に、前記発光層の厚み方向に垂直な平面において二次元的に周期的に配置される前記周期構造をインプリント法によって形成する有機エレクトロルミネッセンス素子の製造方法。 - 前記二次元的に周期的に配置される周期構造を有する有機層が高分子化合物を含む有機層である請求項1記載の有機エレクトロルミネッセンス素子の製造方法。
- 請求項1又は2記載の製造方法により作製された有機エレクトロルミネッセンス素子を備える表示装置。
- 請求項1又は2記載の製造方法により作製された有機エレクトロルミネッセンス素子を備える照明装置。
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JP6160485B2 (ja) * | 2011-08-23 | 2017-07-12 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子、照明装置及び表示装置 |
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KR101716960B1 (ko) | 2015-05-28 | 2017-03-16 | 세종대학교산학협력단 | 그래핀 보호를 위한 포장 장치, 그래핀 보호 포장 방법 및 그래핀 회수방법 |
KR102395919B1 (ko) * | 2015-06-19 | 2022-05-10 | 삼성디스플레이 주식회사 | 유기발광 표시장치 |
GB2541890A (en) * | 2015-09-01 | 2017-03-08 | Cambridge Display Tech Ltd | Nanoimprint patterning method |
JP2019197423A (ja) * | 2018-05-10 | 2019-11-14 | シャープ株式会社 | 基板の製造方法及び表示装置の製造方法 |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10229243A (ja) * | 1997-02-18 | 1998-08-25 | Hitachi Ltd | 有機発光素子 |
JPH11307266A (ja) * | 1998-04-23 | 1999-11-05 | Matsushita Electric Ind Co Ltd | 有機発光素子 |
JP2000200687A (ja) * | 1998-12-29 | 2000-07-18 | Seiko Epson Corp | El装置 |
JP2002008868A (ja) * | 2000-06-16 | 2002-01-11 | Seiko Epson Corp | 面発光装置 |
JP2002313554A (ja) * | 2001-04-16 | 2002-10-25 | Seiko Epson Corp | 発光素子及び発光素子の製造方法 |
JP2004311419A (ja) * | 2003-03-25 | 2004-11-04 | Kyoto Univ | 発光素子及び有機エレクトロルミネセンス発光素子 |
JP2005251488A (ja) * | 2004-03-03 | 2005-09-15 | Hitachi Displays Ltd | 発光素子,発光型表示装置及び照明装置 |
JP2009009861A (ja) | 2007-06-28 | 2009-01-15 | Tokyo Institute Of Technology | 有機el素子及びその製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2223167C (en) | 1996-12-04 | 2004-04-27 | Hitachi, Ltd. | Organic light emitting element and producing method thereof |
US6392338B1 (en) | 1998-04-23 | 2002-05-21 | Matsushita Electrical Industrial Co., Ltd. | Organic light emitter having optical waveguide for propagating light along the surface of the substrate |
KR20010024923A (ko) * | 1998-12-17 | 2001-03-26 | 야스카와 히데아키 | 발광 장치 |
GB2361356B (en) | 2000-04-14 | 2005-01-05 | Seiko Epson Corp | Light emitting device |
US7038373B2 (en) * | 2002-07-16 | 2006-05-02 | Eastman Kodak Company | Organic light emitting diode display |
CN1781339A (zh) * | 2003-03-25 | 2006-05-31 | 国立大学法人京都大学 | 发光元件以及有机电致发光元件 |
SG10201500825SA (en) * | 2005-02-17 | 2015-04-29 | Agency Science Tech & Res | Method of low temperature imprinting process with high pattern transfer yield |
JP2008107720A (ja) * | 2006-10-27 | 2008-05-08 | Enplas Corp | 偏光子およびその製造方法 |
CN101226241B (zh) * | 2007-01-18 | 2011-04-20 | 财团法人工业技术研究院 | 单层偏光及配向功能整合膜及其制法和含有其的液晶显示器 |
US20110168976A1 (en) * | 2008-07-24 | 2011-07-14 | The Regents Of The University Of California | Micro- and nano-structured led and oled devices |
JP5575434B2 (ja) | 2009-08-20 | 2014-08-20 | 住友化学株式会社 | 電極付基板の製造方法 |
-
2009
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10229243A (ja) * | 1997-02-18 | 1998-08-25 | Hitachi Ltd | 有機発光素子 |
JPH11307266A (ja) * | 1998-04-23 | 1999-11-05 | Matsushita Electric Ind Co Ltd | 有機発光素子 |
JP2000200687A (ja) * | 1998-12-29 | 2000-07-18 | Seiko Epson Corp | El装置 |
JP2002008868A (ja) * | 2000-06-16 | 2002-01-11 | Seiko Epson Corp | 面発光装置 |
JP2002313554A (ja) * | 2001-04-16 | 2002-10-25 | Seiko Epson Corp | 発光素子及び発光素子の製造方法 |
JP2004311419A (ja) * | 2003-03-25 | 2004-11-04 | Kyoto Univ | 発光素子及び有機エレクトロルミネセンス発光素子 |
JP2005251488A (ja) * | 2004-03-03 | 2005-09-15 | Hitachi Displays Ltd | 発光素子,発光型表示装置及び照明装置 |
JP2009009861A (ja) | 2007-06-28 | 2009-01-15 | Tokyo Institute Of Technology | 有機el素子及びその製造方法 |
Non-Patent Citations (2)
Title |
---|
APPL. PHYS. LETT., vol. 88, 2006, pages 223509 |
See also references of EP2501207A4 |
Also Published As
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JP2011103194A (ja) | 2011-05-26 |
EP2501207A4 (en) | 2013-11-06 |
EP2501207A1 (en) | 2012-09-19 |
TWI549562B (zh) | 2016-09-11 |
JP5528774B2 (ja) | 2014-06-25 |
US20120306357A1 (en) | 2012-12-06 |
CN102687591A (zh) | 2012-09-19 |
CN102687591B (zh) | 2015-05-06 |
KR20120101058A (ko) | 2012-09-12 |
TW201129237A (en) | 2011-08-16 |
US8773015B2 (en) | 2014-07-08 |
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