WO2011052395A1 - Tranche épitaxiale, procédé de fabrication d'une tranche épitaxiale, tranche d'éléments luminescents, procédé de fabrication d'une tranche d'éléments luminescents et élément luminescent - Google Patents

Tranche épitaxiale, procédé de fabrication d'une tranche épitaxiale, tranche d'éléments luminescents, procédé de fabrication d'une tranche d'éléments luminescents et élément luminescent Download PDF

Info

Publication number
WO2011052395A1
WO2011052395A1 PCT/JP2010/068097 JP2010068097W WO2011052395A1 WO 2011052395 A1 WO2011052395 A1 WO 2011052395A1 JP 2010068097 W JP2010068097 W JP 2010068097W WO 2011052395 A1 WO2011052395 A1 WO 2011052395A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
light
epitaxial wafer
emitting element
crystal layer
Prior art date
Application number
PCT/JP2010/068097
Other languages
English (en)
Inventor
Kimio Ichikawa
Original Assignee
Fujifilm Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corporation filed Critical Fujifilm Corporation
Publication of WO2011052395A1 publication Critical patent/WO2011052395A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds

Definitions

  • EPITAXIAL WAFER METHOD OF PRODUCING EPITAXIAL WAFER, LIGHT-EMITTING ELEMENT WAFER, METHOD OF PRODUCING LIGHT-EMITTING
  • the present invention relates to an epitaxial wafer, a method of producing an epitaxial wafer, a light-emitting element wafer, a method of producing a light-emitting element wafer, and a light-emitting element.
  • a light-emitting element such as a light-emitting diode (LED) or the like is produced by cutting an epitaxial wafer obtained by epitaxially growing a semiconductor crystal layer on a monocrystalline substrate into individual pieces element by element.
  • LED light-emitting diode
  • an LED is low in light-emitting efficiency. This is because the refractive index of a semiconductor crystal layer on a light extraction side is higher than that of air and emitting light is reflected at an interface with air to result in lowering light output efficiency.
  • the refractive index n of gallium nitride (GaN) is 2.4.
  • the fine irregular structure can be formed by forming a resist film on a surface of a semiconductor crystal layer, followed by subjecting the resist film to photolithography.
  • the resist film as well has to be uniformly formed with a thickness of sub-micrometer order.
  • a spin coat process where a centrifugal force is used to thinly expand a coating liquid is preferred.
  • a coating defect called a comet defect is generated.
  • the comet defect is generated. Since a coating defect section extending in fan with an attached point of dust as a starting point looks like a comet, the coating defect is called a "comet defect".
  • the nearer the starting point is to the center point 36 the larger the comet defect 70 expands.
  • three comet defects 70 ⁇ to 70 3 are generated, and the comet defect 70] of which starting point is near the center point 36 becomes largest.
  • a crystal growth surface is a mirror surface and defects such as protrusions or the like are not generated.
  • defects such as protrusions or the like are not generated.
  • a semiconductor crystal layer of the epitaxial wafer necessitates a high level of technology to manage and control a crystal growth step and is likely to have various crystal defects.
  • the protrusion as well is one of the crystal defects.
  • polishing step is normally conducted uniformly on a two-dimensional plane with an entire substrate held under pressure.
  • An epitaxial wafer having protrusions on a surface of the semiconductor crystal layer is likely to warp in so-called parabola or propeller. Accordingly, when, in the polishing step, an entirety of substrate is held under pressure, the substrate may be deformed to result in polishing a normal surface other than the defect or in generating cracks.
  • a surface of a wafer obtained by crystal growth is normally a mirror surface
  • a polishing step of a wafer surface is rather conducted to roughen a surface.
  • An object of roughening a wafer front surface (or back surface) is to differentiate a front and back surface, to chamfer a peripheral portion, to mark a production number and the like (see JP-A Nos. 2007-42748, 2009- 182341 and 2008- 181972).
  • a front surface is differentiated from a back surface, a back surface side is roughened.
  • the present invention was conducted in view of the above-mentioned situations and an object of the invention is to provide an epitaxial wafer capable of forming a resist film having a uniform film thickness on a surface of a semiconductor crystal layer and a production method thereof. Furthermore, another object of the present invention is to provide a light-emitting element wafer where on a surface of semiconductor crystal layer a resist film having a uniform film thickness or a uniform fine irregular structure is formed and a production method thereof. Still furthermore, still another object of the invention is to provide a light-emitting element of which light extraction efficiency is improved by a uniform fine irregular structure formed on a surface of a semiconductor crystal layer.
  • An epitaxial wafer including: a monocrystalline substrate; and a semiconductor crystal layer formed on the monocrystalline substrate by crystal growth, an element forming region of a surface of the semiconductor crystal layer being partially surface roughened in comparison with a crystal growth surface.
  • ⁇ 2> The epitaxial wafer of ⁇ 1>, wherein the roughened surface has an arithmetic surface roughness Ra of from 0.1 ⁇ to 10 ⁇ .
  • ⁇ 5> The epitaxial wafer of any one of ⁇ 1> to ⁇ 4>, wherein the semiconductor crystal layer is any one selected from the group consisting of a gallium nitride (GaN) semiconductor, a gallium arsenide (GaAs) semiconductor, an indium-gallium-aluminum-phosphorus
  • a method of producing the epitaxial wafer of ⁇ 1> to ⁇ 5> including:
  • a method of producing the light-emitting element wafer of ⁇ 10> including: forming a photoresist film on a surface of the epitaxial wafer; and forming a porous structure where holes having a diameter of 0.05 ⁇ or more and less than 1 ⁇ are arranged at a pitch of sub-micrometer order on a surface of the epitaxial wafer by photolithography with the photoresist film.
  • ⁇ 13> A light-emitting element including a chip obtained by sectioning the light-emitting element wafer of ⁇ 10>.
  • an epitaxial wafer capable of forming a resist film having a uniform film thickness on a surface of a semiconductor crystal layer and a production method thereof are provided. Furthermore, a light-emitting element wafer where on a surface of semiconductor crystal layer a resist film having a uniform film thickness or a uniform fine irregular structure is formed and a production method thereof are provided. Still furthermore, a light-emitting element of which light extraction efficiency is improved by a uniform fine irregular structure formed on a surface of a semiconductor crystal layer is provided.
  • FIG. 1 A is a diagram for explaining an LED wafer used as a raw material
  • FIG IB is a diagram for explaining an LED wafer used as a raw material
  • FIG. 1C is a diagram for explaining an LED wafer used as a raw material
  • FIG 2A is a perspective view showing an aspect where a defect portion is present on a surface of an LED wafer
  • FIG 2B is an enlarged diagram of the defect portion of FIG. 2 A;
  • FIG. 3 is a schematic diagram showing an aspect where a resist film is formed by spin coating on a surface of the LED wafer;
  • FIG. 4A is a sectional diagram showing an aspect where a fine irregular structure is non-uniformized by generation of a comet defect
  • FIG. 4B is a sectional diagram showing an aspect where a fine irregular structure is non-uniformized by generation of a comet defect
  • FIG 4C is a sectional diagram showing an aspect where a fine irregular structure is non-uniformized by generation of a comet defect
  • FIG 5 A is a process chart showing a production process of an LED wafer involving an embodiment of the present invention
  • FIG. 5B is a process chart showing a production process of an LED wafer involving an embodiment of the present invention.
  • FIG. 6 is a plan diagram of an LED wafer wherefrom protrusions involving an embodiment of the present invention are removed;
  • FIG. 7 is a schematic diagram showing an aspect where a protrusion is removed by polishing to form a rough surface section
  • FIG. 8 A is a sectional diagram showing an aspect where when an LED wafer from which a protrusion has been removed is used a fine irregular structure is uniformly formed;
  • FIG. 8B is a sectional diagram showing an aspect where when an LED wafer from which a protrusion has been removed is used a fine irregular structure is uniformly formed;
  • FIG 8C is a sectional diagram showing an aspect where when an LED wafer from which a protrusion has been removed is used a fine irregular structure is uniformly formed;
  • FIG. 9 is a sectional diagram schematically showing a structure of an LED element involving an embodiment of the present invention.
  • FIG. 10 is a partially enlarged diagram of a surface of a semiconductor crystal layer of an LED element.
  • FIG 11 is a plan view for describing a comet defect generated by spin coating.
  • FIG. 1 A is a perspective view showing an appearance of an epitaxial wafer for light-emitting diode, which is used as a raw material in an embodiment of the present invention.
  • FIG IB is a schematic diagram showing an aspect when LED chips are individualized from the epitaxial wafer shown in FIG. 1 A.
  • FIG. 1C is a sectional view showing a laminate structure of the epitaxial wafer shown in FIG 1 A.
  • an epitaxial wafer for LEDs (hereinafter, referred to as "LED wafer") 10 is a wafer obtained by epitaxially growing a semiconductor crystal layer 30 constituting an LED element on a monocrystalline substrate 22.
  • a surface 14 of the semiconductor crystal layer 30 is a front surface side of the LED wafer 10.
  • the LED wafer 10 is almost circular in plan view and a diameter (wafer size) thereof is from 2 inch to 12 inch depending on a material.
  • a wafer size of 2 inch (53.8 mm) is usually used.
  • a straight notch called an orientation flat (OF) 12 is disposed to distinguish a crystal direction.
  • An OF 12 is used also in various alignments.
  • a V-shaped notch called a notch is disposed.
  • a back surface side of the LED wafer 10 is roughened to form a so-called cloudy surface. For example, this is a case when a back surface side is roughened to distinguish a back surface from a front surface or a case when a substrate side is polished to make thin.
  • the LED wafer 10 is divided into plural LED chips 20.
  • a magnitude of each of LED chips 20 may be about 360 ⁇ x 360 ⁇ .
  • plural LED chips 20 rectangular in plan view can be obtained.
  • the OF 12 is formed in parallel with a cleaved surface of a crystal, by forming a scribe groove having a predetermined depth on the pattern by laser scribing or the like, followed by dividing along the scribe groove, the LED wafer can be readily divided.
  • the LED wafer 10 is roughly circular in plan view and a part thereof is notched to dispose an OF 12. Accordingly, in a peripheral section of a surface 14 of the LED wafer 10, an unused region 16 (hatched portion) that is not used to form the LED chips 20 is generated. On the other hand, a region used to form LED chips 20 is called an "element forming region 18". The LED chips 20 obtained from the LED wafer 10 are used to form individual LED elements. A structure of the LED element will be described below.
  • the LED wafer 10 has a semiconductor crystal layer 30 formed on a monocrystalline substrate 22.
  • an n-type semiconductor layer 24, a light-emitting layer 26 and a p-type semiconductor layer 28 are stacked in this order from a monocrystalline substrate 22 side.
  • the p-type semiconductor layer 28 is exposed on the surface 14 of the LED wafer 10.
  • a GaN based LED wafer on a sapphire substrate, an n-GaN layer, a light-emitting layer and a p-GaN layer are stacked.
  • the semiconductor crystal layer 30 can be formed by the use of a known epitaxial growth method such as a metalorganic vapor phase epitaxy method (MOVPE), a molecular beam epitaxial growth method (MBE) or the like.
  • MOVPE metalorganic vapor phase epitaxy method
  • MBE molecular beam epitaxial growth method
  • the semiconductor crystal layer 30 can be constituted of a gallium nitride (GaN) semiconductor, a gallium arsenide (GaAs) semiconductor, an
  • a semiconductor constituting the semiconductor crystal layer 30 is appropriately selected in accordance with a desired emission wavelength, emission brightness and the like of LED.
  • An emission wavelength of the LED can be broadly selected from an UV region (for example, 200 nm) to an infrared region.
  • FIG. 2 A is a perspective view showing an aspect when a surface of the LED wafer is partially enlarged and observed.
  • FIG. 2B is a partially enlarged view of a surface of FIG. 2A.
  • a protrusion 34 is present in the part 32.
  • a protrusion 34 found at one position (part 32) is illustrated.
  • FIG 3 is a schematic diagram showing an aspect when a resist film is formed on a surface of the LED wafer by spin coating.
  • the LED wafer 10 is rotated around a rotation axis L of the LED wafer 10 (for example, in a direction of an arrow mark A).
  • the rotation axis L is an axis that goes through a center point 36 of the LED wafer 10 and is vertical to a surface 14 of the LED wafer 10.
  • a dispenser 38 for feeding a resist film forming coating liquid (photoresist) 40 is disposed on the upper side of the LED wafer 10.
  • a coating liquid 40 from the dispenser 38 is fed.
  • the coating liquid 40 that is fed is thinly stretched from an inner side toward an outer side by a centrifugal force owing to a rotation of the LED wafer 10. Thereby, the resist film is formed into a thin film of sub-micrometer order.
  • Viscosity of a coating liquid 40 used to process a photonic crystal structure described below is 0.1 Pa - s or less, preferably 0.05 Pa - s or less.
  • the lower limit of the viscosity is preferably 0.005 Pa- s or more and more preferably 0.01 Pa* s or more.
  • FIGs. 4A to 4C are sectional views showing an aspect when a fine irregular structure is inhomogenized owing to generation of comet defects.
  • the drawings describe
  • a height of the protrusion 34 is larger than a thickness of a resist film 42 and the protrusion 34 is present so as to punch through the resist film 42.
  • FIG. 4 A when a resist film is formed by spin coating, a flow of the coating liquid 40 from the inside toward the outside is disturbed by the protrusion 34, thereby a coating defect section called a comet defect is generated (see FIG. 11). As the result thereof, on a side inner than the protrusion 34, a thick resist film 42 is formed and on a side outer than the protrusion 34, a thin resist film 42 is formed. That is, the resist film 42 is not formed uniformly.
  • a resist film 42 is patterned so as to form a fine irregular structure on a surface 14 of the LED wafer 10.
  • the fine irregular structure here is a photonic crystal structure where circular holes are regularly bored.
  • the resist film 42 is patterned, owing to mask exposure and development of the resist film 42, circular holes 43 are regularly bored in the resist film 42.
  • deep circular holes 43 are formed, and on a side more outside than the protrusion 34, shallow circular holes 43 are formed.
  • a surface 14 of the LED wafer 10 is exposed. That is, the resist film 42 is not uniformly patterned.
  • the LED wafer can be more preferably etched.
  • a thickness of the lower resist layer is preferably from 0.01 ⁇ to 1 ⁇ , more preferably from 0.02 ⁇ to 0.5 ⁇ , and still more preferably from 0.05 ⁇ to 0.3 ⁇ . Even when the lower resist layer is formed, a protrusion-like defect generated on a surface of the LED wafer cannot be completely covered, that is, the comet defect cannot be improved.
  • FIGs. 5 A and 5B each show a process chart showing a production step of an LED wafer involving an embodiment of the present invention.
  • An LED wafer involving an embodiment of the present invention is what has been obtained by removing protrusions that generate comet defects from the LED wafer that becomes foregoing raw material.
  • defect portions 46 owing to protrusions on a surface 14 of the LED wafer 10 are detected.
  • plural (from several defect portions to several tens defect portions) defect portions 46 are detected.
  • three defect portions 461 to 46 3 are detected.
  • the defect portions 461 to 46 3 each are different in a distance from the center point 36 and in area.
  • the defect portion 46 owing to the protrusions has a diameter in the order from several micrometers to several hundred micrometers. In particular, the defect portions 46 of about several hundred micrometers in diameter are high in the likelihood of forming comet defects.
  • these defect portions 46 can be visually confirmed.
  • detected defect portions 46 can be marked with a pencil by circling the defect portions 46 or the like.
  • a position of the defect portion 46 may be specified.
  • the LED wafer 10 is disposed on a predetermined stage, a surface 14 of the LED wafer 10 is photographed by a stationary camera, and the photographed image may be used to specify a position (coordinates) of the defect portion 46 from an X-Y coordinate system set relative to the camera.
  • the protrusion 34 present in the detected defect portion 46 is mechanically polished and removed.
  • polishing machines include known rotary polishing machines such as a pencil grinder, a drum grinder, a spindle grinder and the like. Among these, a pencil grinder appropriate for polishing a narrow range is preferable. Furthermore, in the case where the outermost periphery section of the LED wafer 10 warps 20 ⁇ or more from a reference surface, the LED wafer 10 is deformed by holding under pressure; accordingly, also from the viewpoint that there is no need of holding the LED 10 under pressure, a pencil grinder is preferable.
  • a pencil grinder 48 equipped with a polishing section 48A where a disc-like grind stone rotates is used as a polishing machine.
  • the polishing section 48A brought into contact with the defect portion 46, the polishing section 48 A is rotated, the protrusion 34 present in the defect portion 46 is polished and removed.
  • a surface 14 of the LED wafer 10 is preferably washed and dried.
  • the protrusion 34 can be manually removed with a pencil grinder 48. Furthermore, in the case where an image taken with a camera is used to specify a position of the defect portion 46, a polishing operation can be also automatically conducted by disposing a polishing machine movable in three-dimensional directions (3 axis directions of X-axis/Y-axis/Z-axis) on a stage, followed by moving the polishing machine to a specified position and by moving in an up and down direction (Z axis direction). Since the defect portion 46 is polished until a height
  • the height "substantially" the same means that as to a polishing height of the protrusion 34 a process error of micrometer order can be allowed because a thickness of the resist film is sub-micrometer order. As will be described below, this is because an aim here is achieved as long as a flat resist film is formed by polishing the protrusion 34 to the extent where the comet defect is not generated.
  • a monitoring means to track a progress status of the polishing, whether the polishing came to an end or not can be determined to automatically finish the polishing.
  • the monitoring means like this, an optical monitoring unit that makes use of reflective light or an image processing unit that processes a photographic image can be used.
  • the defect portion 46 can be visually confirmed, since also whether the polishing came to an end or riot can be visually determined, this is most efficient.
  • FIG 6 is a plan view of an LED wafer from which a protrusion involving an embodiment of the present invention has been removed.
  • An LED wafer 1 OA from which protrusions have been removed by polishing has rough surface portions 50 of which surface is roughened in comparison with a crystal growth surface (mirror surface) partially in an element forming region of the LED surface 14 A.
  • three detected defect portions 46 ⁇ to 46 3 are polished (see FIGs. 5A and 5B) and thereby three rough surface sections 50i to 50 3 are formed on the surface 14A.
  • the rough surface section 50 is a surface portion of which arithmetic surface roughness Ra is from 0.1 ⁇ to 10 ⁇ .
  • a region of which arithmetic surface roughness Ra is 0.1 ⁇ or more is obviously different from a crystal growth surface that is a mirror surface and can be also visually distinguished.
  • the comet defect can be remarkably reduced.
  • a thickness of the resist film may fluctuate.
  • the upper limit value of the arithmetic surface roughness Ra is preferably as small as possible and 1 ⁇ or less is more preferable.
  • the arithmetic surface roughness Ra is the arithmetic average surface roughness according to JIS B0601 and a measurement length is from 10 ⁇ to 100 ⁇ .
  • a measurement method may be either an optical measurement method or a stylus type measurement method.
  • FIG. 7 is a schematic diagram that shows an aspect where a protrusion is polished and removed to form a rough surface section. It is preferred to polish to a broad range containing a defect portion 46 owing to the protrusion 34 so that a height the substantially same as a surface 14 of an LED wafer 10 may be obtained.
  • the roughening process is preferably conducted in the range where the diameter R 2 may be 0.5 to 10 times the diameter R ⁇ by polishing.
  • a total area of the rough surface section 50 is in the range of 0.1 to 10 times a total area of the defect portion 46.
  • FIGs. 8 A to 8C each are a sectional diagram that shows an aspect where when an LED wafer 10A from which a protrusion has been removed is used, a fine irregular structure is homogeneously formed. As shown in FIG. 8 A, on a surface 14 A of the LED wafer 10A, the defect portion 46 is polished and thereby a rough surface section 50 is formed. When a resist film is formed by spin coating, a coating liquid 40 expands from the inside toward the outside.
  • the resist film 42 is patterned so as to form a fine irregular structure on a surface 14A of an LED wafer 10A.
  • circular holes 43 are regularly bored.
  • a rough surface section 50 is formed at a height substantially the same as the surface 14 A; accordingly, circular holes 43 having a constant depth are formed from the inside toward the outside. That is, the resist film 42 is homogeneously patterned.
  • the resist film 42 is homogeneously formed and thereby a fine irregular structure is homogeneously formed on a surface of a semiconductor crystal layer 30.
  • the LED wafer 10A is provided with a homogeneously formed fine irregular structure on a surface 14A thereof, even when LEDs are produced by dividing into plural LED chips 20, performances of produced LEDs do not fluctuate.
  • FIG. 9 is a sectional view schematically showing a structure of an LED element (light-emitting element) involving an embodiment of the present invention.
  • an LED element 20A includes a monocrystalline substrate 22, a
  • the contact layer 52 can be constituted of a transparent conductive material such as indium tin oxide (ITO) or the like.
  • the p-side electrode 54 and n-side electrode 56 can be constituted of a metal such as gold (Au) or the like.
  • the protective film 58 can be constituted of an insulating material such as a metal oxide or the like.
  • the semiconductor crystal layer 30 is constituted of an n-type semiconductor layer 24, a light-emitting layer 26 and a p-type semiconductor layer 28.
  • the n-type semiconductor layer 24, the light-emitting layer 26 and the p-type semiconductor layer 28 are formed by sequentially epitaxially growing on the monocrystalline substrate 22. Furthermore, the semiconductor crystal layer 30 is formed in mesa by partially removing by dry etching the n-type semiconductor layer 24, the light-emitting layer 26 and the p-type semiconductor layer 28 to the middle of the n-type semiconductor layer 24.
  • the n-side electrode 56 On a surface of the n-type semiconductor layer 24 exposed by etching, the n-side electrode 56 is formed. On the other hand, on the p-type semiconductor layer 28, the p-side electrode 54 is formed via the contact layer 52. Furthermore, the protective film 58 is formed so as to cover a surface of the n-type semiconductor layer 24, light-emitting layer 26, p-type semiconductor layer 28 and contact layer 52 and a side surface of the p-side electrode 54 and n-side electrode 56.
  • FIG. 10 is a partially enlarged diagram of a surface of a semiconductor crystal layer of an LED element.
  • An LED element 20 A prepared with the LED wafer 1 OA has a fine irregular structure formed on a surface of the semiconductor crystal layer 30, that is, on a surface of the p-type semiconductor layer 28.
  • a part 60 of a surface of the p-type semiconductor layer 28 is enlarged and the fine irregular structure will be detailed therewith.
  • a photonic crystal structure where circular holes 62 are regularly bored is formed on a surface of the p-type semiconductor layer 28 .
  • a two-dimensional photonic crystal structure where circular holes 62 are arranged in square lattice is formed.
  • a light extraction efficiency of an LED element 20A is improved.
  • a depth Z of the circular hole 62 can be set to, for example, about 0.1 ⁇ to 0.2 ⁇ .
  • a light-emitting element is an LED was described.
  • a light-emitting element may be another semiconductor light-emitting element such as a semiconductor laser or the like.
  • An LED wafer obtained by depositing a GaN semiconductor crystal layer on an m surface of a sapphire substrate having a diameter of 2 inches (trade name: "ES-WQBL", manufactured by Epistar Corporation) was prepared. It was confirmed that, on a surface of the LED wafer (p-GaN layer surface), protrusion defects having a diameter of 100 ⁇ and a diameter of 200 ⁇ , respectively, were 10.
  • a surface of the LED wafer was polished with a pencil grinder and thereby the protrusion defects having a diameter of about 50 ⁇ or more were removed.
  • the polishing with a pencil grinder was conducted with an elastic rubber grindstone having a diameter of 2 mm and #800 grain size rotating at 4000 rpm. From a result of optical microscope observation of a surface of the LED wafer, a total area of a protrusion defect portion was 0.002% of a total area of the LED wafer and a total area of the ground portion was 0.01%.
  • a photoresist liquid having the viscosity of 0.01 Pa* s was coated by a spin coater (trade name: ' ⁇ - ⁇ ', manufactured by Mikasa Corporation) and thereby a resist film having a thickness of 0.1 ⁇ was formed.
  • the photoresist liquid was obtained by dissolving 2 g of the compound having a salt structure (in which the molar ratio of anion : cation is 1 : 1/2) shown below in 100 ml of tetrafluoropropanol. By polishing the protrusions, on a spin-coated resist film, a comet defect was not found.
  • a surface of a laser-processed LED wafer was etched by the use of a parallel plate type RIE system (trade name: "10NL", manufactured by SUMCO Co., Ltd.) with SF6 gas to remove the resist film.
  • a surface of an LED wafer from where the resist film was removed is observed with an AFM, it was confirmed that a photonic crystal structure where circular holes having a diameter of an aperture of 0.2 ⁇ and a depth of 0.2 ⁇ are formed at a pitch of 0.4 ⁇ is obtained.
  • a light amount distribution at a forward current of 3.5 V was from 4.5 mW to 6.0 mW.
  • a resist film was formed, followed by conducting a photonic crystal processing with the resist film.
  • comet defects were formed in the surroundings of the protrusion.
  • the circular holes formed thereafter by etching were formed indefinite and deformed in shape depending on positions and a depth of the comet defect portion was several tens nm. It was the same as that a fine irregular structure was not formed.
  • a light amount distribution at a forward current of 3.5 V was from 4.0 mW to 6.0 mW. It is found that in comparison with example 1, a light amount distribution is broad and a light amount fluctuates more.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

La présente invention concerne une tranche épitaxiale comportant : un substrat monocristallin et une couche en cristal semi-conducteur formée sur le substrat monocristallin par un procédé de croissance cristalline, un élément formant une région d'une surface de la couche en cristal semi-conducteur étant partiellement une surface rugueuse en comparaison avec une surface de croissance cristalline.
PCT/JP2010/068097 2009-10-30 2010-10-07 Tranche épitaxiale, procédé de fabrication d'une tranche épitaxiale, tranche d'éléments luminescents, procédé de fabrication d'une tranche d'éléments luminescents et élément luminescent WO2011052395A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-251134 2009-10-30
JP2009251134A JP2011096935A (ja) 2009-10-30 2009-10-30 エピタキシャルウエハ、エピタキシャルウエハの製造方法、発光素子ウエハ、発光素子ウエハの製造方法、及び発光素子

Publications (1)

Publication Number Publication Date
WO2011052395A1 true WO2011052395A1 (fr) 2011-05-05

Family

ID=43921821

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2010/068097 WO2011052395A1 (fr) 2009-10-30 2010-10-07 Tranche épitaxiale, procédé de fabrication d'une tranche épitaxiale, tranche d'éléments luminescents, procédé de fabrication d'une tranche d'éléments luminescents et élément luminescent

Country Status (3)

Country Link
JP (1) JP2011096935A (fr)
TW (1) TW201125164A (fr)
WO (1) WO2011052395A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2973755B1 (fr) * 2013-03-13 2018-12-05 Lumileds Holding B.V. Structure semiconducteur comprenant un contact réfléchissant poreux

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104246990A (zh) 2012-04-26 2014-12-24 东丽株式会社 具有凹凸结构的晶体衬底的制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5527686A (en) * 1978-08-21 1980-02-27 Sony Corp Projection eliminating device
JPS61147523A (ja) * 1984-12-21 1986-07-05 Mitsubishi Metal Corp 気相成長基板の突起除去方法および装置
JP2008182110A (ja) * 2007-01-25 2008-08-07 Matsushita Electric Ind Co Ltd 窒化物半導体発光装置
JP2008283037A (ja) * 2007-05-11 2008-11-20 Hitachi Cable Ltd 発光素子
JP2009043895A (ja) * 2007-08-08 2009-02-26 Hitachi Cable Ltd 発光素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3990925A (en) * 1975-03-31 1976-11-09 Bell Telephone Laboratories, Incorporated Removal of projections on epitaxial layers
JPS56114315A (en) * 1980-02-14 1981-09-08 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5527686A (en) * 1978-08-21 1980-02-27 Sony Corp Projection eliminating device
JPS61147523A (ja) * 1984-12-21 1986-07-05 Mitsubishi Metal Corp 気相成長基板の突起除去方法および装置
JP2008182110A (ja) * 2007-01-25 2008-08-07 Matsushita Electric Ind Co Ltd 窒化物半導体発光装置
JP2008283037A (ja) * 2007-05-11 2008-11-20 Hitachi Cable Ltd 発光素子
JP2009043895A (ja) * 2007-08-08 2009-02-26 Hitachi Cable Ltd 発光素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2973755B1 (fr) * 2013-03-13 2018-12-05 Lumileds Holding B.V. Structure semiconducteur comprenant un contact réfléchissant poreux

Also Published As

Publication number Publication date
TW201125164A (en) 2011-07-16
JP2011096935A (ja) 2011-05-12

Similar Documents

Publication Publication Date Title
US12027643B2 (en) Process for producing adjacent chips comprising LED wires and device obtained by the process
JP4642138B2 (ja) 化合物半導体素子ウェハーの製造方法
US7645625B2 (en) Method for fine processing of substrate, method for fabrication of substrate, and light emitting device
KR102208684B1 (ko) 반도체 발광 소자 및 그 제조 방법
KR100967841B1 (ko) 질화갈륨계 화합물 반도체 발광소자
TWI327340B (en) Production method for semiconductor device
KR20150103661A (ko) 나노와이어 led 구조 및 이를 제조하는 방법
CN104637877B (zh) 半导体芯片的制造方法、半导体芯片及半导体装置
KR20120016262A (ko) 향상된 추출 효율을 갖는 재발광 반도체 구조물
TW201838204A (zh) 具有氮化銦鎵模板層的紅色發光二極體及其製造方法
TWI702734B (zh) 半導體發光元件及其製造方法
JP6865431B2 (ja) エッチング方法
WO2011052395A1 (fr) Tranche épitaxiale, procédé de fabrication d'une tranche épitaxiale, tranche d'éléments luminescents, procédé de fabrication d'une tranche d'éléments luminescents et élément luminescent
JP2009158696A (ja) 半導体発光素子の製造方法および半導体発光素子
CN101083220B (zh) 衬底、衬底检测方法以及制造元件和衬底的方法
JP6849968B2 (ja) エッチング方法
KR100893260B1 (ko) 기능성 박막, 그 제조방법 및 이를 이용한 표시장치
US10937927B2 (en) Group III nitride light-emitting element and method for producing the light-emitting element
JP2006332267A (ja) 発光装置、発光装置の製造方法および窒化物半導体基板
KR20060124104A (ko) 발광 소자의 제조 방법 및 이에 의해 제조된 발광 소자
JP2004200529A (ja) 半導体ウェハ研磨方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10826529

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10826529

Country of ref document: EP

Kind code of ref document: A1