201125164 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種磊晶晶圓（epitaxial wafer)、遙 晶晶圓的製造方法、發光元件晶圓、發光元件晶圓的製造 方法以及發光元件。 【先前技術】 諸如發光二極體（light-emitting diode，LED)等發光 元件是藉由將磊晶晶圓切割成單個的元件片而製成，其中 悬晶晶圓是藉由在單晶體基板（mon〇crystalline substrate) 上遙晶生長半導體晶體層而獲得。一般而言，Led具有低 的發光效率。此乃因光提取側上之半導體晶體層之折射率 (refractive index)高於空氣之折射率’且發出之光在與空 氣之介面處被反射，進而導致降低光輸出效率。舉例而言， 氮化鎵（GaN)之折射率η為2.4。 人們已以各種方式提出一種LED，在此種LED中， 為提高光提取效率’於半導體晶黯之表面上形成亞微米 級「（0.1微米或以上且i微米以下）之細微不規則結構（參 Higher Luminescence LED Using Nano structured Surface Fabricated by Self-Assembled Block CopolymerBACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epitaxial wafer, a method of manufacturing a remote crystal wafer, a light-emitting element wafer, a method of manufacturing a light-emitting element wafer, and a light-emitting method. element. [Prior Art] A light-emitting element such as a light-emitting diode (LED) is fabricated by cutting an epitaxial wafer into individual element sheets, wherein the suspended crystal wafer is formed by a single crystal substrate ( Mon〇crystalline substrate) obtained by growing a semiconductor crystal layer on a remote crystal. In general, Led has low luminous efficiency. This is because the refractive index of the semiconductor crystal layer on the light extraction side is higher than the refractive index of air and the emitted light is reflected at the interface with the air, thereby causing a decrease in light output efficiency. For example, gallium nitride (GaN) has a refractive index η of 2.4. Various types of LEDs have been proposed in which various submicron-sized (0.1 micron or more and less than i micron) fine irregular structures are formed on the surface of a semiconductor wafer for improving light extraction efficiency. Higher Luminescence LED Using Nano structured Surface Fabricated by Self-Assembled Block Copolymer
Lithography，，，TOSHIBA REVIEW，Vol. 60 No. 10 P32 - P35 (20仍)」）。此外’除LED以外，還以各種方式提出一翻 用諸如光子晶體結構等細微不規則結構之光學元件（參見 曰本專利申請案早期公開（JP-A)第11-330619號、第 2001-308457 號及第 2002-62554 號）。 4 201125164, 細微不規則結構可藉由在半導體晶體層之表面上形成 抗蝕劑膜（resist film)並接著使抗蝕劑膜經受光刻 (photolithography)而形成。在光刻中，使用具有高精確 度之技術’例如電子束曝光（electron beam exposure)、深 紫外光雷射曝光（例如，波長λ = 248奈米）、使用半導體 雷射之超咼解析度曝光（super-resolution exposure)等等。 抗蝕劑膜亦須均勻地形成有亞微米級之厚度。為形成此種 薄的抗蝕劑膜’較佳使用旋塗製程（spin coat pr〇cess )，在 旋塗製程中利用離心力來薄薄地展布塗覆液。 【發明内容】 [發明所欲解決之問題] 然而，當使用旋塗製程來形成抗蝕劑膜時，會產生被 稱為彗星缺陷（comet defect)之塗覆缺陷。大體而言，當 塗覆液之流動受到附著於所塗覆表面上的灰塵之干^時田 便會產生彗星缺陷。因以灰塵附著點作為起點呈扇形延伸 之塗覆缺陷部看上去像彗星，故將此種塗覆缺陷稱為「彗 星缺陷」。 當如圖11所示使磊晶晶圓10圍繞中心點36旋轉並使 用旋塗製程來形成抗蝕劑膜42時，在某些情形中，會產生 多個修星缺陷7G。塗覆液在中心點36 ^近饋送。因此， 起點距中心點36越近，彗星缺陷70便擴展得越大。在本 實例中’產生三個拿星缺陷7〇1至7〇3，且起點靠近中心點 36之彗星缺陷7〇i變得最大。 在由彗星缺陷造成之塗覆缺陷部中，在蟲晶晶圓之半 201125164 導體晶體層之表面上不形成細微之不規則結構。因此，存 在以下問題：當在抗蝕劑膜中已產生彗星缺陷時，難以在 半導體晶體層之表面上形成均勻之細微不規則結構。此 外，當將磊晶晶圓切割成單個之元件片以製成LED時，會 具有在所製成之LED之間存在效能波動(performance fluctuates)之問題。 本發明之發明者經過刻苦研究後得到以下發現。亦 即’在正常情況下，晶體生長表面是鏡面，不會產生諸如 突起或類似之缺陷。然而，已發現，在LED製造中所用之 蟲晶晶圓情形中’在半導體晶體層之表面上存在直徑自幾 微米至幾百微米之突起（pr〇trusi〇n)，這些突起會產生蓉 星缺陷。磊晶晶圓之半導體晶體層需要使用高級技術來管 控晶體生長步驟，並有可能具有各種晶體缺陷。突起亦為 晶體缺陷中的一種β 此外，在半導體元件領域中，為使半導體元件變得更 ^4使用機械拋光、化學機械抛光（chemical mechanical polishing ’ CMP)或類似方法來拋光基板或使絕緣膜變平 整。拋光步驟通常是在使整個基板承受壓力的情況下在二 維平面上均勻地實施。在半導體晶體層之表面上具有突起 之蟲晶晶圓可能會以所謂之抛物面（parab〇ia)或螺旋槳 (propeller)形式翹曲。因此，當在拋光步驟中使整個基 板承受壓力時，基板可能會變形而導致對正常表面而不是 對缺陷進行拋光或者導致產生裂紋。 藉由晶體生長而獲得之晶圓之表面在正常情況下為鏡 6 201125164 面，因此，無需實施鏡面拋光步驟。而是對晶圓表面實施 抛光步驟來缝化表面。糖化晶圓正面（或背面）之目的是 對正面與背面進行區分、在周邊部上形成斜面、標記生產 編號等等（參見JP-Α第2007-42748號、2009-182341號及 第2008-181972號）。當對正面與背面進行區分時，對背面 侧進行縫化。 本發明是有鑒於上述情形而作出，且本發明之一目的 是提供一種磊晶晶圓及其製造方法，此磊晶晶圓能夠於半 導體晶體層之表面上形成具有均勻膜厚度之抗蝕劑膜。此 外，本發明之另一目的是提供一種發光元件晶圓及其製造 方法，在此發光元件晶圓中，在半導體晶體層之表面上形 成具有均勻膜厚度或均勻之細微不規則結構的抗蝕劑膜。 此外’本發明之再—目岐提供—種發光元件其中藉由 =成於半導體晶體層之表面上的均勻細微不制結構而提 高此發光元件之光提取效率。 [解決問題之手段] 為達成上述目的’根據申請專利範圍之各項的發明之 特徵在於具有以下組態。 <1>.;種蟲晶晶圓，包括：單晶體基板；以及半導體 :體層’藉由晶體生長而形成於所述單晶體基板上 ，所述 2體巧層之表面之元件形成區域與晶體生長表面相必 被局部地表面糙化。 丹丫厂Μ地慨衣职 .示1項所述之磊晶晶圓，其中所过 '、自0·1微米至10微米之算術表面粗糙度Ra 201125164 、十、鉍第<1：>項或第<2>項所述之磊晶晶圓，其中所 iittS之面積為所述半導體晶體層之表面之總面積的 <4〉.如第項至第<3>項所述之遙晶晶圓，其中所 述疋件是發光二極體（led)。 圓」由二+ 第:1〉項^'第<4>項中任一項所述之蠢晶晶 ^、中彳辭導體晶體層是由刊所構成的族群中選出 科二者/氮化錄（⑽）半導體、石申化鎵（GaAs)半導 ••鎵善碟（InGaAlp)半導體及氧化鋅（Zn〇)半導 <6>. 的方法，包括 種製造如第<i>項至第<5>項所述之磊 晶晶 圓 形』導體晶體層之所述表面之所述元件 藉由拋光而移除所述偵測到的突起部；以及 將所述元件形成區域局部地表面縫化。 至與η導體晶體層部拋光 筆磨=拋項所述之方法，其巾使用錯 項至’其勤進—步處理如第〈卜 包括m 晶圓而形成，所述發光元件晶圓 =· ’所述抗侧卿成於所述 201125164 <10>· —種發光元件晶圓，其藉由進—步處理如 t第<5>項所述之蟲晶晶_形成，所述發光元件 已括.多孔結構，藉由於所述蟲晶晶圓之表面上 級之間距排列直徑為0.05微米或以上且小於 = 形成。 瓜不乏孔而 <=.-種製造如第<9〉項所述之發光元件晶圓之方 法’包括：藉由旋塗而形成所述抗蝕劑膜。 <12>·-種製造如第<1G>項所述之發光元件晶圓之方 法，包括··於所述磊晶晶圓之表面上形成光阻劑膜；以及 ，由使用所述光阻麵進行光刻，形成纽結構，在所述 多孔結構中，直徑為⑼5微米或以上且小於！微米之孔以 亞微米級之間距排列於所述磊晶晶圓之表面上。 <13>· —種發光元件，包括：晶片，藉由切割如第<1〇> 項所述之發光元件晶圓而獲得。 [發明之效果] 曰曰根據本發明，提供一種磊晶晶圓及其製造方法，此磊 晶，圓能夠於半導體晶體層之表面上形成具有均勻膜厚度 之抗餘劑膜。此外，提供一種發光元件晶圓及其製造方法， 在，發，元件晶圓中，在半導體晶體層之表面上形成具有 均1膜厚度或均勻之細微不規則結構的抗㈣膜。此外， 亦提供一種發光元件，其中藉由形成於半導體晶體層之表 面上的均自細微不酬結躺提S此發U件之光提取效 率。 為讓本I明之上述和其他目的、特徵和優點能更明顯 201125164 易懂’下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 以下’將參照附圖來說明本發明之實施例之實例。 〈用於LED元件之磊晶晶圓> 圖1A是顯示用於發光二極體之磊晶晶圓之外觀的立 體圖’此蟲晶晶圓在本發明之一實施例中用作原材料。圖 1B是顯示自圖1A所示磊晶晶圓單分出LED晶片時之態 樣的示意圖。圖1C是顯示圖1A所示磊晶晶圓之積層結構 的剖視圖。 如圖1A及圖1C所示，用於LED之磊晶晶圓（以下 稱為「LED晶圓」）10是藉由在單晶體基板22上磊晶生長 用於構成LED元件的半導體晶體層30而形成的晶圓。半 導體晶體層30之表面14為LED晶圓1〇之正面侧。LED 晶圓10在平面圖中近乎為圓形的，且端視材料而定，其直 從（晶圓規格）為2央对至12英对。舉例而言，在其中於 藍寶石基板上設置GaN半導體晶體層之LED晶圓1〇中， 通常使用2英吋（53.8毫米）之晶圓規格。 為辨別晶體方向，在LED晶圓1〇上設置直的凹口（被 稱為「定向平面（orientation flat，OF)」12)。OF 12 亦 用於各種對準。在某些情形中，設置被稱為凹口之v形凹 口來代替OF 12。此外，在某些情形中，將LED晶圓1〇 之背面側糙化，以形成所謂之雲狀表面（cl〇udysurface)。 舉例而言，當為了區別背面與正面而對背面侧進行糙化時 201125164 或當對基板側進行拋光以使其變薄時即為如此 如圖1B所示，將LED晶圓10分成多個LED晶片20。 母- led晶片2〇之大小可為約36〇微米χ36〇微米。舉例 而言，如虛線所顯示’當沿平行於及垂直於〇f 12之方向 將LED晶圓10圖案化並接著沿圖案進行分割時，可獲得 多個在平面圖中呈矩形之LED晶片2()。舉例而言，在盆 中平行於晶體之切割表面形成〇F 12之情形中，藉由使用 雷射劃刻（laSerseribing)或類似方式在圖案上形成具有預 定深度之_槽並接著沿咖槽騎分割，便可輕易地分 割LED晶圓。 LED晶ϋ 1G在平面圖中大體為圓形，且其—部分帶 有凹口以設置〇F 12。因此，在LED晶圓1〇之表面14之 周邊部中’會產衫用於形成LED晶片2G之不被使用區 域J6 (，影區域）。相反，用於形成LED晶片20之區域Lithography,,,TOSHIBA REVIEW,Vol. 60 No. 10 P32 - P35 (20 still)"). In addition, in addition to the LED, an optical element such as a photonic crystal structure such as a photonic crystal structure is proposed in various ways (see Japanese Patent Application Laid-Open (JP-A) No. 11-330619, No. 2001-308457 No. 2002-62554). 4 201125164, The fine irregular structure can be formed by forming a resist film on the surface of the semiconductor crystal layer and then subjecting the resist film to photolithography. In lithography, techniques with high precision are used, such as electron beam exposure, deep ultraviolet laser exposure (eg, wavelength λ = 248 nm), and exposure using a semiconductor laser. (super-resolution exposure) and so on. The resist film must also be uniformly formed to have a submicron thickness. In order to form such a thin resist film, a spin coat pr〇cess is preferably used, and the coating liquid is thinly spread by centrifugal force in the spin coating process. SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] However, when a resist film is formed using a spin coating process, a coating defect called a comet defect is generated. In general, comet defects occur when the flow of the coating liquid is affected by the dust adhering to the coated surface. Since the coating defect portion which is fan-shaped extending from the dust attachment point looks like a comet, such a coating defect is referred to as a "star defect". When the epitaxial wafer 10 is rotated around the center point 36 as shown in Fig. 11 and the resist film 42 is formed by a spin coating process, in some cases, a plurality of star defect 7G is generated. The coating liquid is fed near the center point 36^. Therefore, the closer the starting point is to the center point 36, the larger the comet defect 70 expands. In this example, three star defects, 7〇1 to 7〇3, are generated, and the comet defect 7〇i of the starting point near the center point 36 becomes maximum. In the coated defect portion caused by the comet defect, no fine irregular structure is formed on the surface of the semiconductor crystal layer of the 201125164 conductor crystal layer. Therefore, there is a problem that when a comet defect has been generated in the resist film, it is difficult to form a uniform fine irregular structure on the surface of the semiconductor crystal layer. In addition, when the epitaxial wafer is diced into individual component pieces to form an LED, there is a problem of performance fluctuates between the fabricated LEDs. The inventors of the present invention obtained the following findings after painstaking research. That is, under normal circumstances, the crystal growth surface is mirror-finished, and defects such as protrusions or the like are not generated. However, it has been found that in the case of a wafer wafer used in the manufacture of LEDs, 'there are protrusions on the surface of the semiconductor crystal layer having diameters ranging from a few micrometers to several hundred micrometers, which generate a star. defect. The semiconductor crystal layer of an epitaxial wafer requires advanced techniques to control the crystal growth step and possibly various crystal defects. The protrusion is also one of crystal defects. Further, in the field of semiconductor elements, in order to make the semiconductor element become more polished, the substrate is polished or chemically polished using a mechanical polishing, chemical mechanical polishing (CMP) or the like. Flattened. The polishing step is usually carried out uniformly on a two-dimensional plane while subjecting the entire substrate to pressure. A wafer wafer having protrusions on the surface of the semiconductor crystal layer may warp in the form of a so-called parab〇ia or propeller. Therefore, when the entire substrate is subjected to pressure during the polishing step, the substrate may be deformed to cause polishing of the normal surface rather than the defect or causing cracks. The surface of the wafer obtained by crystal growth is normally mirror 6 201125164, so there is no need to perform a mirror polishing step. Instead, a polishing step is performed on the surface of the wafer to sew the surface. The purpose of saccharifying the front side (or the back side of the wafer) is to distinguish the front side from the back side, to form a bevel on the peripheral portion, to mark the production number, etc. (see JP-A Nos. 2007-42748, 2009-182341, and 2008-181972). number). When the front and back sides are distinguished, the back side is sewn. The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an epitaxial wafer capable of forming a resist having a uniform film thickness on a surface of a semiconductor crystal layer and a method of manufacturing the same. membrane. Further, another object of the present invention is to provide a light-emitting element wafer in which a resist having a uniform film thickness or a uniform fine irregular structure is formed on a surface of a semiconductor crystal layer, and a method of manufacturing the same. Membrane film. Further, the present invention provides a light-emitting element in which the light extraction efficiency of the light-emitting element is improved by a uniform fine structure which is formed on the surface of the semiconductor crystal layer. [Means for Solving the Problem] In order to achieve the above object, the invention according to each of the scopes of the patent application has the following configuration. <1>.; a seed crystal wafer comprising: a single crystal substrate; and a semiconductor: bulk layer formed on the single crystal substrate by crystal growth, element formation regions and crystal growth on the surface of the two-body layer The surface phase must be partially roughened. The Tanjung Factory has a generous clothing position. The epitaxial wafer described in item 1 has an arithmetic surface roughness Ra from 2011 to 10 μm, and the first surface is <1:> Or the epitaxial wafer according to the item <2>, wherein the area of the iittS is <4> of the total area of the surface of the semiconductor crystal layer, as in item to item <3> The remote crystal wafer is described, wherein the element is a light emitting diode (LED). The circle of the sinusoidal crystal and the sinusoidal conductor crystal layer according to any one of the items of the above-mentioned items, which are selected from the above-mentioned items, are selected from the group consisting of the journals. The method of recording (10) semiconductor, stellite gallium (GaAs) semiconducting • gallium ingot (InGaAlp) semiconductor and zinc oxide (Zn〇) semiconducting <6>, including seed manufacturing as <i> The element of the surface of the epitaxial crystal "conductor crystal layer described in the item <5> is removed by polishing to remove the detected protrusion; and the element is formed The surface of the area is partially sewn. To the method described in the polishing of the η-conductor crystal layer portion, the towel is formed by using the wrong item to form a wafer, and the light-emitting element wafer is formed. The anti-side is formed in the 201125164 <10>---a light-emitting element wafer, which is formed by further processing the insect crystal crystal as described in item t5 <5> The element has a porous structure formed by the arrangement of the upper surface of the crystal wafer having a diameter of 0.05 μm or more and less than =. The method of manufacturing a light-emitting element wafer according to item <9> includes the formation of the resist film by spin coating. <12> The method of producing a light-emitting element wafer according to the item <1G>, comprising: forming a photoresist film on a surface of the epitaxial wafer; and, by using the The photoresist surface is photolithographically patterned to form a neon structure in which the diameter is (9) 5 microns or more and less than! The pores of the micrometers are arranged on the surface of the epitaxial wafer in a submicron order. <13> A light-emitting element comprising: a wafer obtained by cutting a light-emitting element wafer as described in the above item <1>. [Effects of the Invention] According to the present invention, there is provided an epitaxial wafer capable of forming an anti-surplus film having a uniform film thickness on a surface of a semiconductor crystal layer, and a method of manufacturing the same. Further, a light-emitting element wafer and a method of manufacturing the same are provided, in which an anti-(four) film having a uniform film thickness or a uniform fine irregular structure is formed on a surface of a semiconductor crystal layer. Further, there is also provided a light-emitting element in which the light extraction efficiency of the U-shaped member is obtained by the fine-gravity without being paid by the surface formed on the surface of the semiconductor crystal layer. The above and other objects, features and advantages of the present invention will become more apparent from the appended claims. [Embodiment] Hereinafter, an example of an embodiment of the present invention will be described with reference to the drawings. <Epitaxial Wafer for LED Element> Fig. 1A is a perspective view showing the appearance of an epitaxial wafer for a light-emitting diode. This wafer wafer is used as a raw material in an embodiment of the present invention. Fig. 1B is a view showing a state in which the LED wafer is separated from the epitaxial wafer shown in Fig. 1A. Fig. 1C is a cross-sectional view showing the laminated structure of the epitaxial wafer shown in Fig. 1A. As shown in FIG. 1A and FIG. 1C, an epitaxial wafer (hereinafter referred to as "LED wafer") 10 for an LED is formed by epitaxially growing a semiconductor crystal layer 30 for constituting an LED element on a single crystal substrate 22. Formed wafers. The surface 14 of the semiconductor crystal layer 30 is the front side of the LED wafer 1 . The LED wafer 10 is nearly circular in plan view and depends on the material, and its direct (wafer specification) is from 2 center to 12 inches. For example, in an LED wafer in which a GaN semiconductor crystal layer is provided on a sapphire substrate, a wafer size of 2 inches (53.8 mm) is usually used. In order to discern the crystal direction, a straight notch (referred to as "orientation flat (OF)" 12) is provided on the LED wafer 1 〇. OF 12 is also used for various alignments. In some cases, a v-shaped notch called a notch is provided instead of the OF 12. Further, in some cases, the back side of the LED wafer 1 is roughened to form a so-called cloud-like surface. For example, when the back side is roughened in order to distinguish the back side and the front side, or when the substrate side is polished to be thinned, as shown in FIG. 1B, the LED wafer 10 is divided into a plurality of LEDs. Wafer 20. The size of the mother-led wafer 2 can be about 36 Å to χ 36 Å. For example, as shown by the dashed line, when the LED wafer 10 is patterned in a direction parallel to and perpendicular to the 〇f 12 and then divided along the pattern, a plurality of LED chips 2 having a rectangular shape in plan view can be obtained ( ). For example, in the case where the crucible is formed parallel to the cutting surface of the crystal, a groove having a predetermined depth is formed on the pattern by using laser scribing or the like and then riding along the coffee pot. Dividing, you can easily split the LED wafer. The LED wafer 1G is generally circular in plan view, and is partially provided with a notch to set the 〇F12. Therefore, a shirt is formed in the peripheral portion of the surface 14 of the LED wafer 1 to form an unused area J6 (shadow area) of the LED wafer 2G. Instead, the area used to form the LED chip 20
被稱為元件形成區域18」。自IJED晶圓10獲得之LED 曰日片20用於形成單個之LED元件。以下，將對[ED元件 之結構進行說明。 圖^ 所示’ led晶圓1〇具有形成於單晶體基板 之半導體晶體層3G。在半導體晶體層3G中，自單晶 ^反22之側依序堆疊有n型半導體層24、發光層仏及 Ρ里體層28。Ρ型半導體層28暴露於LED晶圓1〇之 表面14上。舉例而言’在基於GaN之LKD晶圓中，在藍 f石基板上堆疊n-GaN層、發光層及p-GaN層。半導體晶 層3〇可利用習知之蟲晶生長方法形成，例如利用金屬有 201125164 機氣相磊晶（metal organic vapor phase epitaxy，MOVPE ) 方法刀子束蠢晶生長（molecular beam epitaxial growth， MBE)方法等等。 半導體晶體層30可由氮化鎵（GaN)半導體、砷化鎵 (GaAs)半導體、銦-鎵_鋁_磷（InGaAlp)半導體、氧化 鋅（ZnO)半導體或類似者構成。用於構成半導體晶體層 30之半導體是依據LED之賴望發光波長、發光亮度等 而加以適當選擇。LED之發光波長可廣泛地選自 UV區域 (例如200奈米）至紅外光區域。 ▲圖2A是顯示當局部地放大並觀察LED晶圓之表面與 之態樣的立體圖。圖2B是圖2A之表面的局部放大圖。如 圖2B之放大圖所示，當詳細地觀察LED晶圓ι〇之表面 =之一部分32時’發現在部分32中存在突起34。在藉由 方疋塗而於LED晶圓1〇之表面14上形成抗_膜之情形 中，會因突起34而產生蓉星缺陷。此處，繚示在一個位置 (部分32)上所發現之突起34。然*，在實際中亦存在 在表面14上分散地存在多個突起34之情形。 <彗星缺陷及細微不規則結構之不均勻性> 圖3是顯示當藉由旋塗而於咖晶圓之表面上形成抗 =3之態樣的示意圖。如圖3所示，在藉由旋塗而於 ^曰曰® H)之表® 14上形成抗蚀劑膜之情形中，咖晶 =圍，LED晶圓1G之旋轉軸線L旋轉（例如， 頭^己A之方向）。旋轉軸線L是經過咖晶圓1〇 心點36並垂直於LED晶圓1〇之表面14的軸線。 12 201125164. 此外，如以虚線所示意性地顯示，在LED晶圓l〇之 上侧，設置有分配器（dispenser) 38，以饋送用於形成抗 蝕劑膜之塗覆液（光阻劑）40。在LED晶圓1〇之中心點 36附近，饋送來自分配器38之塗覆液40。藉由因LED晶 圓10旋轉所產生之離心力，所饋送之塗覆液4〇自内側朝 外側薄薄地鋪展開。藉此，將抗蝕劑膜形成為亞微米級之 薄膜。 用於處理以下所述光子晶體結構之塗覆液40之黏度 為0.1帕.秒（Pa.s)或以下’較佳為0.05帕.秒或以下。黏 度之下限較佳為0.005帕.秒或以上，更佳為0.01帕.秒或 以上。 圖4A至圖4C是顯示當由於彗星缺陷的產生而使細微 不規則結構不均勻時之態樣的剖視圖。這些圖描述習知問 題。如上文所述，在LED晶圓10之正面14 (即半導體晶 體層30之表面）上存在突起34之情形中，突起34會使得 在抗蝕劑膜中形成彗星缺陷。突起3 4之高度大於抗蝕劑膜 42之厚度，且所存在之突起34穿透抗蝕劑膜42。 如圖4A所示，當藉由旋塗形成抗蝕劑膜時，自内側 朝外側流動之塗覆液4〇受到突起34干擾，進而產生被稱 為^星缺陷之塗覆缺陷部（參見圖1〇。結果，在較突起 34靠内之側上，形成厚的抗蝕劑膜42，而在較突起34靠 外之側上，形成薄的抗蝕劑膜42 ^亦即，不均勻地形成抗 蝕劑膜42。 如圖4B所示，將抗蝕劑膜42圖案化，以於LED晶 13 201125164 圓10之表面14上形成細微不規則結構。如下文所將說明， 此處之細微不規則結構是其中規則地開有圓形孔之光子晶 體結構。當將抗#劑膜42圖案化時，由於抗餘劑膜42之 遽罩曝光（mask exposure)及顯影（development)，會在 抗蝕劑膜42中規則地開有圓形孔43。在較突起34靠内之 侧上，形成深的圓形孔43，而在較突起34靠外之側上， 形成淺的圓形孔43。在形成有圓形孔43之部分中，暴露 出LED晶圓1〇之表面14。亦即，抗蚀劑膜42被不均勻 地圖案化。 如圖4C所示’當使用已開有圓形孔43之抗蝕劑膜42 進行乾式蝕刻（dry etch)時，LED晶圓1〇之表面14被部 分地移除。因形成圓形孔43而被暴露出之表面14藉由乾 式触刻被移除。藉此，在半導體晶體層30之表面上，形成 細微不規則結構，在此細微不規則結構中已規則地開有與 圓形孔43相對應之圓形孔44。在較突起34靠内之侧上， 形成深的圓形孔44，而在較突起34靠外之侧上，則形成 淺的圓形孔44。亦即，不均勻地形成細微不規則結構。此 處’藉由假定突起34部分不被蝕刻而對圖式進行了簡化。 根據圖4A至圖4C之實例顯而易見，當在LED晶圓 1〇之表面14上存在突起34時，會在抗蝕劑膜42中產生 塗覆缺陷部；因此，難以於半導體晶體層3〇之表面上均勻 地形成細微不規則結構。此外，在上述内容中，如圖4A 所示’描述在較突起34靠外之侧上形成薄抗蝕劑膜似之 實例。然而，亦存在在較突起34靠外之侧上不形成樹脂膜 201125164 形成圓^fl 種情形中’在較突起34靠外之側上，不 半導體:體声44。亦即’因不存在抗·膜42， 形刻而被平整地移除，進而不 會產作=當=旋塗而形成抗_膜時 程中，在存在在噴墨製程或噴塗製 輝中產生液體滴;形：’亦會在乾燥步 發生變化，進而二二;周圍之抗㈣丨膜之厚度會 =外，當在LED晶(5與㈣細之間恰當地設置具有 刻性之半導體層或金屬層（例如氧切（si〇2) :等）作為下部抗_層時，可更佳地侧咖晶圓。下 =钮劑層之厚度較佳為請微米至1微米，更佳為〇.〇2 /至〇‘5微米，尤其更佳為⑽5微米至Q 3微米。甚至 二形成下部抗賴糾，亦無法完全覆蓋㈣晶圓表面上 厅產生之突起狀缺陷，亦即，無法改良彗星缺陷。 <突起之移除> 圖5A及圖5B分別顯示根據本發明實施例之LED晶 #之製造步驟之流程圖。根據本發明實施例之LED晶圓是 轉由自作為前述原材料之LED晶圓移除會產生_星缺陷 之突起後所獲得之LED晶圓。 首先，如圖5A所示，偵測LED晶圓1〇之表面14上 ^突起造成之缺陷部46。在某些情形中，偵測到多個（自 幾個缺陷部至幾十個缺陷部）缺陷部46。在本實例中，偵 15 201125164 卿三個缺陷部46ι至％。缺陷部％直％各自距中心 6之距離以及面積並不相同。由突起造成之缺陷部46 具有大約自幾微米至幾百微米之直徑。具體而言，直徑約 為幾百微米之缺陷部46形絲星賴之可紐較高。然 而丄在大多數LED晶圓中，在缺陷部46之總面積由「心」 ，不且表面14之總面積由「St」表示之情形中，缺陷部46 按百分比計所佔面積之比率（==Sd/StX刚）實質為〇〇2% 或以下。 在某些情形中，可以目視方式確認此等缺陷部46。在 此種情形中，可藉由使用鉛筆圈劃缺陷部46或類似方式來 標§己所偵測之缺陷部46。此外，藉由使用與op 12及led 晶圓10之外周邊相接觸之L形刻度尺45並以中心點％ 作為基準點，可指明缺陷部46之位置。此外，儘管圖中未 示出，然而LED晶圓1〇是設置於預定平台上，由靜止照 相機對LED晶圓1〇之表面14進行拍照，並可使用所拍攝 之影像、根據相對於照相機設定之χ_γ座標系來指明缺陷 部46之位置（座標）。 接著，如圖5B所示，對存在於所偵測缺陷部46中之 突起34進行機械拋光及移除。拋光機之實例包括習知之旋 轉式拋光機，例如鉛筆磨具、鼓形磨具（drum grinder)、 轉軸式模具（spindle grinder)等等。其中，適用於拋光狹 窄範圍之船筆模具較佳。此外，在LED晶圓1〇之最外周 邊部自基準表面翻1曲20微米或以上之情形中，LED晶圓 10會因承受壓力而變形；因此’自無需，LED 10承受壓 20112516( 力之觀點而言，鉛筆模具亦較佳。 在圖5B所示之實例中，使用配備有拋光部48A之鉛 筆磨具48作為拋光機，在拋光部48A中，盤狀磨石（grind stone)旋轉。當使拋光部48A接觸缺陷部46並旋轉時， 存在於缺陷部46中之突起34被拋光及移除。為移除因拋 光而產生之灰塵，在拋光後，較佳地沖洗LED晶圓10之 表面14並乾燥之。 在可以目視方式確認缺陷部46之情形中，可使用鉛筆 模具48人工地移除突起34。此外，在使用以照相機拍攝 之影像來指明缺陷部46之位置的情形中，亦可藉由以下方 式自動地實施拋光操作：在平台上設置可在三維方向（X 軸/Y軸/Z軸這3個轴向）上移動之拋光機，並接著將拋光 機移動至指定位置並沿上下方向（Z軸方向）移動《因缺 陷部46被拋光至達到與LED晶圓1〇之表面丨4實質相同 之高度為止，故自動地確定在上下方向之位置。此處，高 度「實質」相同意謂對於突起34之拋光高度而言，因抗蝕 劑膜之厚度是亞微米級的，故可容許存在微米級之製程誤 差。如下文所將說明，此乃因只要藉由將突起34拋光至不 會產生彗星缺陷之程度而形成平的抗蝕劑膜，便可達成此 處之目的。 此外’藉由設置監測裝置來追蹤拋光之進展狀態，便 可確定拋光操作是否結束以自動地結束拋光。可使用利用 反射光之光學監測單元或用於處理攝影影像之影像處理單 元作為此類監測裝置。此外，在可以目視方式確認缺陷部 17 201125164 46之情形中，因亦可以目視方式確定拋光是否結束，故此 種方式最為有效。 <突起已被移除之LED晶圓> 圖6是本發明實施例所涉及之突起已被移除的LED晶 圓之平面圖。突起已藉由拋光而被移除之LED晶圓1〇Α 具有粗糙表面部50，與局部地位於LED表面14A之元件 形成區域中之晶體生長表面（鏡面）相比，粗糙表面部5〇 之表面被糙化。在本實例中，三個所偵測缺陷部至463 被拋光（參見圖5A及圖5B)，因而在表面14A上形成三 個粗糙表面部5(^至503。 此處’粗糙表面部50是算術表面粗糙度Ra為ο ι微 米至10微米之表面部。算術表面粗糙度Ra為Ο.!微米或 以上之區域明顯不同於作為鏡面之晶體生長表面，並且亦 可以目視方式加以區分。當算術表面粗糙度Ra被製作為 10微米或以下時’可大幅減少彗星缺陷。在粗糙表面部5〇 周圍’在某些情形中’抗蝕劑膜之厚度可能會波動。為避 免抗钱劑膜厚度之變化，較佳使算術表面粗糙度Ra之上 限值盡可能小，且更佳為丨微米或以下。 另外，算術表面粗糙度Ra是依據JIS B0601之算術平 均表面粗縫度’且量測長度為1〇微米至1〇〇微米。此外， 里測方法可為光學量測方法或觸針式量測方法。 ® 7是顯示在突起被拋光及移除後形成粗糙表面部之 態樣的示意圖。較佳對包含由突起34造成之缺陷部46的 寬廣範圍進行拋光，以便可獲得與LED晶圓10之表面Η 201125164 實質相同之南度。舉例而言，當缺陷部46之直徑被指定為 Ri且粗糙表面部50之直徑被指定為I時，較佳在直徑R2 可為直徑R1之0.5倍至10倍的範圍中藉由拋光來實施糙 化製程。另一方面，無需移除不會干擾抗蝕劑膜形成之小 突起以及存在於不被使用區域16中之突起（參見圖1B)。 相應地，粗糙表面部50之總面積處於為缺陷部46之總面 積之0.1倍至1〇倍的範圍内。 甚至當過度地實施糙化製程時，缺陷部46所佔據之面 積比率亦小於〇 02%或以下。因此，當粗縫表面部之總 面積被指定為「sc」且表面14之總面積被指定為rSt」時， 粗I表面部50按百分比計所佔據之面積比率（= Sc/Stxl〇〇)為〇」％或以下。 圖8A至圖8(：分別為當使用突起已被移除之led晶 10A時均勻地形成細微不規則結構之態樣的剖視圖。如 ，8A =示，在LED晶圓i〇a之表面Μ上，抛光缺陷 。46丄藉此形成婦表面冑％。當藉由旋塗形成抗蚀劑膜 、’塗覆液40會自内側朝外侧展布。 存在圖4八所示突起34之情形相比，顯而易見，因 二二覆液40之流動不受干擾’因此可自 ^ , 4α. 形成膜厚度恆定之抗蝕劑膜42。亦即，均勻地 2 42。此外，在藉由拋光而移除突起34後， 而'，!^面部5G及其周圍，保留有細微之不規則部。然 劑液㈣ί微之不朗部並不形餘星缺陷。此乃因抗触 、有會經歷「液體膜變平（liquid film flattening)」 19 201125164 之特性，其中由於塗覆及乾燥過程中之「找平現象 (leveling)」，抗蝕劑液體會沿傾斜表面乾燥並固化，進而 形成平的抗蝕劑膜。 如圖8B所示，將抗蝕劑膜42圖案化，以於LED晶 圓10A之表面14A上形成細微不規則結構。在抗蝕劑: 42中，規則地開有圓形孔43。與存在圖4B所示突起34 之情形相比，顯而易見，粗糙表面部5〇被形成為與表面 14A實質相同之高度；因此，自内側朝外娜成深度恆定 之圓形孔43。亦即，抗蝕劑膜42被均勻地圖案化。 如圖8C所不，當使用其中已開有圓形孔之抗蝕劑膜 42實施乾式蝕刻時，因形成圓形孔43而暴露之表面i4A 藉由乾式蝕刻被移除，藉此形成其中規則地開有圓形孔44 之細被不規則結構。與存在圖4C所示突起34之情形相 比’顯而易見’因形成深度恆定之圓形孔43，因此在LED 晶圓10A之表面14A上，自内侧朝外侧形成深度恆定之圓 形孔44。此外，在粗糙表面部5〇中，亦形成具有實質相 同形狀之圓形孔44。亦即，均勻地形成細微不規則結構。It is called an element forming region 18". The LED chip 20 obtained from the IJED wafer 10 is used to form a single LED component. Hereinafter, the structure of the [ED element will be described. The 'led wafer 1' shown in Fig. 2 has a semiconductor crystal layer 3G formed on a single crystal substrate. In the semiconductor crystal layer 3G, an n-type semiconductor layer 24, a light-emitting layer 仏 and a ruthenium layer 28 are sequentially stacked from the side of the single crystal. The germanium-type semiconductor layer 28 is exposed on the surface 14 of the LED wafer. For example, in a GaN-based LKD wafer, an n-GaN layer, a light-emitting layer, and a p-GaN layer are stacked on a blue f-stone substrate. The semiconductor crystal layer 3 can be formed by a conventional method for growing a crystal, such as a metal organic vapor phase epitaxy (MOVPE) method, a molecular beam epitaxial growth (MBE) method, and the like. Wait. The semiconductor crystal layer 30 may be composed of a gallium nitride (GaN) semiconductor, a gallium arsenide (GaAs) semiconductor, an indium-gallium-aluminum-phosphorus (InGaAlp) semiconductor, a zinc oxide (ZnO) semiconductor, or the like. The semiconductor used to constitute the semiconductor crystal layer 30 is appropriately selected depending on the wavelength of the light emitted from the LED, the luminance of the light, and the like. The wavelength of the LED can be broadly selected from the UV region (e.g., 200 nm) to the infrared region. ▲ Fig. 2A is a perspective view showing a state in which the surface of the LED wafer is partially enlarged and observed. Fig. 2B is a partial enlarged view of the surface of Fig. 2A. As shown in the enlarged view of Fig. 2B, when the surface of the LED wafer ι = = one portion 32 is observed in detail, it is found that the protrusion 34 is present in the portion 32. In the case where an anti-film is formed on the surface 14 of the LED wafer 1 by the square coating, the star defects are generated by the protrusions 34. Here, the protrusions 34 found at one location (portion 32) are shown. However, in practice, there are also cases where a plurality of protrusions 34 are dispersedly present on the surface 14. <Inhomogeneity of comet defect and fine irregular structure> Fig. 3 is a view showing a state in which an anti-3 is formed on the surface of a coffee wafer by spin coating. As shown in FIG. 3, in the case where a resist film is formed on the surface of the sheet|seat® 14 by spin coating, the rotation axis L of the LED wafer 1G is rotated (for example, Head ^ A direction). The axis of rotation L is the axis that passes through the center of the wafer 36 and is perpendicular to the surface 14 of the LED wafer. 12 201125164. Further, as schematically indicated by a broken line, on the upper side of the LED wafer 10, a dispenser 38 is provided to feed a coating liquid for forming a resist film (photoresist) Agent) 40. The coating liquid 40 from the dispenser 38 is fed near the center point 36 of the LED wafer. By the centrifugal force generated by the rotation of the LED crystal 10, the applied coating liquid 4 is spread thinly from the inner side toward the outer side. Thereby, the resist film is formed into a submicron-sized film. The coating liquid 40 for treating the photonic crystal structure described below has a viscosity of 0.1 Pa.sup.second (Pa.s) or less, preferably 0.05 Pascal seconds or less. The lower limit of the viscosity is preferably 0.005 Pa.s or more, more preferably 0.01 Pa.s or more. 4A to 4C are cross-sectional views showing a state when the fine irregular structure is uneven due to the occurrence of a comet defect. These figures describe the conventional problems. As described above, in the case where the protrusions 34 are present on the front surface 14 of the LED wafer 10 (i.e., the surface of the semiconductor crystal layer 30), the protrusions 34 cause the formation of comet defects in the resist film. The height of the protrusions 34 is larger than the thickness of the resist film 42, and the protrusions 34 present penetrate the resist film 42. As shown in FIG. 4A, when a resist film is formed by spin coating, the coating liquid 4 flowing from the inside to the outside is disturbed by the protrusions 34, thereby producing a coating defect portion called a star defect (see the figure). As a result, on the side closer to the inner side of the protrusion 34, a thick resist film 42 is formed, and on the outer side of the protrusion 34, a thin resist film 42 is formed, that is, unevenly A resist film 42 is formed. As shown in FIG. 4B, the resist film 42 is patterned to form a fine irregular structure on the surface 14 of the LED crystal 13 201125164 circle 10. As will be explained below, the subtle here The irregular structure is a photonic crystal structure in which a circular hole is regularly opened. When the anti-reagent film 42 is patterned, due to mask exposure and development of the anti-surplus film 42 A circular hole 43 is regularly formed in the resist film 42. On the inner side of the protrusion 34, a deep circular hole 43 is formed, and on the outer side of the protrusion 34, a shallow circular hole is formed. 43. In the portion where the circular hole 43 is formed, the surface 14 of the LED wafer 1 is exposed. That is, the resist film 42 is uneven. As shown in Fig. 4C, when the resist film 42 having the circular holes 43 is used for dry etch, the surface 14 of the LED wafer 1 is partially removed. The exposed surface 14 of the circular hole 43 is removed by dry lithography. Thereby, on the surface of the semiconductor crystal layer 30, a fine irregular structure is formed, in which the fine irregular structure is regularly opened. A circular hole 44 corresponding to the circular hole 43. On the inner side of the projection 34, a deep circular hole 44 is formed, and on the outer side of the projection 34, a shallow circular hole 44 is formed. That is, the fine irregular structure is unevenly formed. Here, the drawing is simplified by assuming that the portion of the protrusion 34 is not etched. It is apparent from the example of FIGS. 4A to 4C that when the LED wafer is 〇 When the protrusions 34 are present on the surface 14, a coating defect portion is generated in the resist film 42; therefore, it is difficult to uniformly form fine irregularities on the surface of the semiconductor crystal layer 3〇. Further, in the above, As shown in FIG. 4A, 'describes a thin resist formed on the outer side of the protrusion 34. The film is similar to the example. However, there is also a case where no resin film 201125164 is formed on the outer side of the protrusion 34. In the case of forming a circle, the side on the outer side of the protrusion 34 is not semiconductor: body sound 44. 'Because there is no anti-film 42, it is removed in a flat shape, so that it will not be produced = when = spin coating to form an anti-film time course, in the presence of liquid in the inkjet process or spray ash Drop; shape: 'will also change in the drying step, and then two or two; the surrounding resistance (four) the thickness of the enamel film will be = outside, when the LED crystal (5 and (4) fine between the appropriate set of the semiconductor layer or When a metal layer (for example, oxygen cut (si〇2): etc.) is used as the lower anti-layer, the wafer can be more preferably used. Lower = the thickness of the button layer is preferably from micrometers to 1 micrometer, more preferably 〇.〇2 / to 〇 '5 micrometers, and even more preferably (10) 5 micrometers to Q 3 micrometers. Even the formation of the lower anti-glare can not completely cover (4) the protrusion-like defects generated in the upper surface of the wafer surface, that is, the defect of the comet cannot be improved. <Removal of Protrusions> Figs. 5A and 5B respectively show a flow chart of a manufacturing step of the LED crystal # according to an embodiment of the present invention. The LED wafer according to an embodiment of the present invention is an LED wafer obtained by removing a protrusion which is a star defect from the LED wafer which is the aforementioned raw material. First, as shown in Fig. 5A, the defective portion 46 caused by the protrusions on the surface 14 of the LED wafer 1 is detected. In some cases, a plurality of defective portions 46 (from several defective portions to several tens of defective portions) are detected. In this example, Detect 15 201125164 qing three defect parts 46 ι to %. The % difference % of the defective portions are not the same from the center 6 and the area. The defect portion 46 caused by the protrusion has a diameter of from about several micrometers to several hundred micrometers. Specifically, the defect portion 46 having a diameter of about several hundred micrometers has a higher shape. However, in most LED wafers, in the case where the total area of the defective portion 46 is "heart" and the total area of the surface 14 is represented by "St", the ratio of the defective portion 46 to the area occupied by the percentage ( ==Sd/StX just) is essentially 〇〇2% or less. In some cases, such defective portions 46 can be visually confirmed. In this case, the defective portion 46 can be marked by using the pencil circled defect portion 46 or the like. Further, the position of the defective portion 46 can be indicated by using the L-shaped scale 45 in contact with the outer periphery of the op 12 and the led wafer 10 with the center point % as a reference point. In addition, although not shown in the drawing, the LED wafer 1 is disposed on a predetermined platform, and the surface 14 of the LED wafer 1 is photographed by the still camera, and the captured image can be used, according to the camera setting. The χ γ coordinate is used to indicate the position (coordinate) of the defective portion 46. Next, as shown in Fig. 5B, the protrusions 34 present in the detected defective portion 46 are mechanically polished and removed. Examples of the polishing machine include conventional rotary polishing machines such as a pencil grinder, a drum grinder, a spindle grinder, and the like. Among them, a boat pen mold suitable for polishing a narrow range is preferred. In addition, in the case where the outermost peripheral portion of the LED wafer 1 turns from the reference surface by 20 μm or more, the LED wafer 10 is deformed by the pressure; therefore, the LED 10 is subjected to the pressure of 20112516. In view of the above, a pencil mold is also preferable. In the example shown in Fig. 5B, a pencil grinder 48 equipped with a polishing portion 48A is used as a polishing machine, and in the polishing portion 48A, a grind stone is rotated. When the polishing portion 48A is brought into contact with the defect portion 46 and rotated, the protrusions 34 present in the defect portion 46 are polished and removed. To remove dust generated by polishing, the LED wafer is preferably rinsed after polishing. The surface 14 is dried and dried. In the case where the defective portion 46 can be visually confirmed, the projection 34 can be manually removed using the pencil mold 48. Further, in the case where the image taken by the camera is used to indicate the position of the defective portion 46. The polishing operation can also be automatically performed by providing a polishing machine that can move in the three-dimensional direction (the three axes of the X-axis/Y-axis/Z-axis) on the platform, and then moving the polishing machine to Specify position and up and down (Z-axis direction) movement "Because the defective portion 46 is polished to a height substantially equal to the surface 丨4 of the LED wafer 1", the position in the vertical direction is automatically determined. Here, the height "substantially" is the same. It is said that for the polishing height of the protrusions 34, since the thickness of the resist film is submicron-sized, a process error of a micron order can be tolerated. As will be explained below, as long as the protrusions 34 are polished to The purpose of this is achieved by not forming a flat resist film to the extent of the comet defect. In addition, by setting the monitoring device to track the progress of the polishing, it is possible to determine whether the polishing operation is finished to automatically end the polishing. An optical monitoring unit that uses reflected light or an image processing unit that processes photographic images can be used as such a monitoring device. Further, in the case where the defective portion 17 201125164 46 can be visually confirmed, it is also possible to visually determine whether the polishing is performed or not. This is the most effective way. <LED wafer with protrusions removed> FIG. 6 is a projection of the embodiment of the present invention has been removed A plan view of the LED wafer. The LED wafer 1A whose protrusion has been removed by polishing has a rough surface portion 50 as compared with a crystal growth surface (mirror surface) partially located in the element formation region of the LED surface 14A. The surface of the rough surface portion 5 is roughened. In the present example, the three detected defective portions to 463 are polished (see Figs. 5A and 5B), thereby forming three rough surface portions 5 on the surface 14A (^ to 503. Here, the 'rough surface portion 50 is a surface portion having an arithmetic surface roughness Ra of from οm to 10 μm. The arithmetic surface roughness Ra is Ο.! μm or more is significantly different from the crystal growth surface as a mirror surface, It can also be distinguished by visual means. When the arithmetic surface roughness Ra is made to be 10 μm or less, the comet defect can be greatly reduced. The thickness of the resist film may fluctuate around the rough surface portion 5' in some cases. In order to avoid variations in the thickness of the anti-money film, it is preferred to make the upper limit of the arithmetic surface roughness Ra as small as possible, and more preferably 丨 micron or less. Further, the arithmetic surface roughness Ra is an arithmetic mean surface roughness degree according to JIS B0601 and the measurement length is 1 〇 micrometer to 1 〇〇 micrometer. In addition, the measurement method may be an optical measurement method or a stylus measurement method. ® 7 is a schematic view showing a state in which a rough surface portion is formed after the protrusion is polished and removed. It is preferable to polish a wide range including the defective portion 46 caused by the projections 34 so as to obtain substantially the same southness as the surface Η 201125164 of the LED wafer 10. For example, when the diameter of the defective portion 46 is designated as Ri and the diameter of the rough surface portion 50 is designated as I, it is preferably performed by polishing in a range in which the diameter R2 can be 0.5 to 10 times the diameter R1. Roughening process. On the other hand, it is not necessary to remove the small protrusions which do not interfere with the formation of the resist film and the protrusions which are present in the unused area 16 (see Fig. 1B). Accordingly, the total area of the rough surface portion 50 is in the range of 0.1 to 1 times the total area of the defective portion 46. Even when the roughening process is excessively performed, the area ratio occupied by the defective portion 46 is also less than 〇 02% or less. Therefore, when the total area of the rough surface portion is designated as "sc" and the total area of the surface 14 is designated as rSt", the ratio of the area occupied by the rough I surface portion 50 in percentage (= Sc/Stxl〇〇) It is %% or less. 8A to 8(() are cross-sectional views respectively showing a state in which a minute irregular structure is uniformly formed when the led crystal 10A whose protrusion has been removed is used. For example, 8A = shows that the surface of the LED wafer i〇aΜ On the other hand, the polishing defect is 46. Thereby, the surface area % is formed. When the resist film is formed by spin coating, the coating liquid 40 is spread from the inner side toward the outer side. The presence of the protrusion 34 shown in FIG. It is obvious that the flow of the liquid-repellent solution 40 is not disturbed, so that the resist film 42 having a constant film thickness can be formed from ^, 4α. That is, uniformly 2 42. Further, it is moved by polishing. In addition to the protrusions 34, and the ',!^ face 5G and its surroundings, there are subtle irregularities. However, the liquid (4) is not shaped by the residual star. This is because of anti-touch, there will be experience. Liquid film flattening 19 201125164, in which the resist liquid dries and solidifies along the inclined surface due to the "leveling" in the coating and drying process, thereby forming a flat resist. The film is patterned as shown in FIG. 8B for the LED wafer 10A. A fine irregular structure is formed on the face 14A. In the resist: 42, a circular hole 43 is regularly opened. As compared with the case where the protrusion 34 shown in Fig. 4B is present, it is apparent that the rough surface portion 5 is formed to be The surface 14A is substantially the same height; therefore, a circular hole 43 having a constant depth from the inside toward the outside is formed. That is, the resist film 42 is uniformly patterned. As shown in Fig. 8C, when a circle has been opened therein When the resist film 42 of the hole is subjected to dry etching, the surface i4A exposed by the formation of the circular hole 43 is removed by dry etching, thereby forming a fine irregular structure in which the circular hole 44 is regularly opened. Compared with the case where the protrusion 34 shown in Fig. 4C is present, it is apparent that a circular hole 44 having a constant depth is formed on the surface 14A of the LED wafer 10A, and a circular hole 44 having a constant depth is formed from the inner side toward the outer side. Further, in the rough surface portion 5, circular holes 44 having substantially the same shape are also formed. That is, fine irregularities are uniformly formed.
根據圖8A至圖8C之實例顯而易見，在使用突起已被 移除之LED晶圓l〇A之情形中，均勻地形成抗蝕劑膜42, 藉此於半導體晶體層30之表面上均勻地形成細微不規則 結構。因此，只要LED晶圓1〇人於其表面14a上設置有 均勻形成之細微不規則結構，甚至當藉由分割成多個LED 晶片20來製成LED時，所製成之LED之效能亦不會出現 波動。 20 201125164 <LED元件> 接著，將闡述以LED晶圓i〇A製備之LED元件之处 構。圖9是示意性地顯示根據本發明實施例之咖元件（^ 光兀件）之結構的剖視圖。如圖9所示，LED元件包 括單晶體基板22、半導體晶體層3G、接觸層52、p側電極 54、η側電極56及保護膜58。接觸層52可由諸如氧化鋼 錫（mdmmtinoxide，ΙΤ0)等透明導電材料製成。ρ側電 極54與η侧電極56可由諸如金（Au)等金屬製成。保護 膜58可由諸如金屬氧化物等絕緣材料製成。 半導體晶體層30由n型半導體層24、發光層％及 型半導體層28構成。η型半導體層24、發光層％及ρ型 半導體層28是藉由依序蟲晶生長於單晶體基板22上而形 成。此外，半導體層30是藉由以乾式侧將η型半導體層 24、發光層26及ρ型半導體層28局部地移除至η ^ 體層24之中間而形成為台面結構（mesa)。 在藉由制而暴露出的n型半導體層24之表面上，护 成η側電極56。另-方面’在p型半導體層以上，透過 接觸層52形成p側電極54。此外，保護膜5 ，型半導體層24、發光層26、p型半導體層 層52之表面與p側電極54及n側電極％之侧面。 圖10是·元件之半導體晶體層之表面 圖。以哪晶圓製備之咖元件肅在半^晶體 層3〇之表面上（即在P型半導體層烈之表面上）有 細微不規則結構。P型半導體層28之表面之—部分⑼被 21 201125164 放大’並將以此來詳細說明細微不規則結構。如圖10所 示’在P型半導體層28之表面上’形成規則地開有圓形孔 62之光子晶體結構。在本實例中，形成以正方形柵格 (lattice)形式排列有圓形孔62之二維光子晶體結構。 當於P型半導體層28之表面上形成光子晶體結構時， LED元件20A之光提取效率得到提高。舉例而言，當光子 晶體結構之柵格排列被設計成使得圓形孔62之孔直徑χ 可為1微米或以下、且若圓形孔62之間距被指定為γ則 χγ之比值（=孔直徑χ/間距γ)可為i或以下時，led 兀件20A之光提取效率會大幅提高。圓形孔62之深度z 可設定為例如約0.1微米至〇 2微米。 在上述實施例中，闡述了發光元件為LED之情形。然 而二只要發光元件是藉由對磊晶晶圓進行單分而製得，發 光凡件亦可為另-種半導體發統件，例如半導體雷射等 等。 實例 、頁例1> 之藍2 ，此LED日日日圓是藉由在直徑為2英时 板（商品名：「ES_WQBL」，由Epistar公司製 ； 〇ΕΝ ° ， 在此LED B曰圓之表自（p_GaN層表面）上 米與直徑為·微米之突输_為1G個為从 使用錯筆模具來拋光此LED晶圓之表面，藉此移除直 22 201125164. 徑為約5 0微米或以上之突起缺陷。以鉛筆模具進行之拋光 是使用以4000轉/分鐘（rpm)之轉速旋轉之彈性橡膠磨石 來實施，此彈性橡膠磨石之直徑為2毫米且粒度/grain size)為#800。根據對此LED晶圓表面進行光學顯微鏡觀 察之結果，突起缺陷部之總面積佔LED晶圓總面積之 0.002% ’且被研磨部分之總面積為〇 〇1 %。 於此LED晶圓之表面上，使用旋塗機（商品名： 「H-1」，由Mikasa公司製造）塗覆黏度為〇 〇1帕秒之光 阻劑液體，藉此形成厚度為〇.丨微米之抗蝕劑膜。此光阻 劑液體是藉由將2克具有以下所示鹽類結構（其中陰離 子.陽離子之莫爾比為1 : 1/2)之化合物溶解於1〇〇毫升 之四氟丙醇（tetraflu〇roPiOpanol)中而獲得。藉由對突起 進行拋光，在經旋塗之抗姓劑膜上未發現彗星缺陷。As is apparent from the examples of FIGS. 8A to 8C, in the case where the LED wafer 10A whose protrusion has been removed is used, the resist film 42 is uniformly formed, thereby uniformly forming on the surface of the semiconductor crystal layer 30. Subtle irregular structure. Therefore, as long as the LED wafer 1 is provided with a fine irregular structure uniformly formed on the surface 14a thereof, even when the LED is formed by dividing into a plurality of LED chips 20, the performance of the manufactured LED is not There will be fluctuations. 20 201125164 <LED Element> Next, the structure of the LED element prepared by the LED wafer i〇A will be explained. Fig. 9 is a cross-sectional view schematically showing the structure of a coffee element (photo element) according to an embodiment of the present invention. As shown in Fig. 9, the LED element includes a single crystal substrate 22, a semiconductor crystal layer 3G, a contact layer 52, a p-side electrode 54, an n-side electrode 56, and a protective film 58. The contact layer 52 may be made of a transparent conductive material such as oxidized steel (mdmmtinoxide, ΙΤ0). The p-side electrode 54 and the n-side electrode 56 may be made of a metal such as gold (Au). The protective film 58 may be made of an insulating material such as a metal oxide. The semiconductor crystal layer 30 is composed of an n-type semiconductor layer 24, a light-emitting layer%, and a type semiconductor layer 28. The n-type semiconductor layer 24, the light-emitting layer %, and the p-type semiconductor layer 28 are formed by sequentially growing crystal grains on the single crystal substrate 22. Further, the semiconductor layer 30 is formed into a mesa structure by locally removing the n-type semiconductor layer 24, the light-emitting layer 26, and the p-type semiconductor layer 28 to the middle of the n-type body layer 24 on the dry side. The n-side electrode 56 is protected on the surface of the n-type semiconductor layer 24 exposed by the system. On the other hand, the p-side electrode 54 is formed through the contact layer 52 above the p-type semiconductor layer. Further, the surfaces of the protective film 5, the semiconductor layer 24, the light-emitting layer 26, and the p-type semiconductor layer 52 are on the side faces of the p-side electrode 54 and the n-side electrode %. Fig. 10 is a surface view of a semiconductor crystal layer of an element. The wafer component prepared by the wafer has a fine irregular structure on the surface of the semiconductor layer 3 (i.e., on the surface of the P-type semiconductor layer). The portion (9) of the surface of the P-type semiconductor layer 28 is enlarged by 21 201125164 and will be used to explain the fine irregular structure in detail. As shown in Fig. 10, 'on the surface of the P-type semiconductor layer 28', a photonic crystal structure in which a circular hole 62 is regularly formed is formed. In the present example, a two-dimensional photonic crystal structure in which circular holes 62 are arranged in a square lattice form is formed. When a photonic crystal structure is formed on the surface of the P-type semiconductor layer 28, the light extraction efficiency of the LED element 20A is improved. For example, when the grid arrangement of the photonic crystal structures is designed such that the hole diameter χ of the circular hole 62 can be 1 μm or less, and if the distance between the circular holes 62 is specified as γ, the ratio of χγ (= hole) When the diameter 间距/pitch γ) can be i or less, the light extraction efficiency of the LED element 20A is greatly improved. The depth z of the circular hole 62 can be set, for example, to about 0.1 μm to 〇 2 μm. In the above embodiment, the case where the light-emitting element is an LED is explained. However, as long as the light-emitting elements are formed by single-dividing the epitaxial wafers, the light-emitting elements may be other semiconductor semiconductor components, such as semiconductor lasers and the like. Example, page example 1> Blue 2, this LED day and day yen is made by the board at a diameter of 2 inches (trade name: "ES_WQBL", made by Epistar; 〇ΕΝ °, where the LED B is round The distance from the (p_GaN layer surface) to the diameter of the micron is 1G. The surface of the LED wafer is polished from the wrong pen mold, thereby removing the straight line 22 201125164. The diameter is about 50 microns or The above-mentioned protrusion defect. Polishing with a pencil mold is carried out using an elastic rubber grindstone rotating at a speed of 4000 rpm, which is 2 mm in diameter and grain size is # 800. As a result of optical microscopic observation of the surface of the LED wafer, the total area of the protrusion defective portion accounts for 0.002% of the total area of the LED wafer and the total area of the polished portion is 〇 〇 1%. On the surface of the LED wafer, a photoresist liquid having a viscosity of 〇〇1 pascal was applied using a spin coater (trade name: "H-1", manufactured by Mikasa Co., Ltd.), thereby forming a thickness of 〇.丨Micron resist film. The photoresist liquid was prepared by dissolving 2 g of a compound having the salt structure shown below (in which the anion. cation has a molar ratio of 1: 1/2) in 1 ml of tetrafluoropropanol (tetraflu〇). Obtained in roPiOpanol). By polishing the protrusions, no comet defects were found on the spin-coated anti-surname film.
在抗蝕劑膜之整個表面上，藉由使用配備有雷射光學 系統之曝光裝置（商品名：「NE〇_1〇〇〇」，由PulseTech有 限公司製造）來實施雷射處理，從而可以〇 4微米之間距 23 201125164 形成開口直徑為0.15微米之圓形孔，其中雷射光學系統之 波長為405奈米且。 使用平行板型RIE系統（商品名：「1〇NL」，由SUMC〇 有限公司製造）以SF6氣體蝕刻經雷射處理之led晶圓 之表面’ W歸抗侧膜。AFM齡鎌綱被移 除之LED B曰曰圓之表面時，確認獲得光子晶體結構，在此光 子晶體結射，以〇_4微米之間距形成孔直徑為〇 2微米 且深度為0.2微来之圓形孔。當量測所得LED曰曰曰圓之平面 内發光分佈（in-plane emission distribution)時，在 3.5 伏 之正向電流下之光量分佈為4.5毫瓦至6.0毫瓦。 <比較例1> 2與實例1她之方式、但使用聽缺陷未被移除之 LED晶圓’形成抗㈣膜，隨後使用抗賴膜實施光子晶 體處理。在形成抗糊糾，確認在突起周_賴星缺 陷。此後藉由钮刻而形成之圓形孔之形狀隨位置而不確定 且變形，且蓉星缺陷部之深度為幾十奈米。此與未形成細 微不規則結構時相同。當量測所得咖晶圓之面内發光分 佈時，在3.5伏之正向電流下之光量分佈為4 〇毫瓦至6 〇 毫瓦。發現與實例丨相比，光量分佈寬且光量波動較大。 雖然本發明已以較佳實施例揭露如上，然其並非用以 „明，任何熟習此技藝者’在不脫離本發明之精神 t \，内’當可作些許之更動與满部’因此本發明之保謹 範圍當視後附之_請專職圍所界定者鱗。 … 【圖式簡單說明】 24 201125164 圖1A是用於解釋用作原材料之LED晶圓的圖式。 圖是用於解釋用作原材料之LED晶圓的圖式。 圖ic是用於解釋用作原材料之LED晶圓的圖式。 圖2A是顯示在LED晶圓之表面上存在缺陷部之態樣 的立體圖。 圖2B是圖2A之缺陷部之放大圖。 圖3是顯示藉由在LED晶圓之表面上進行旋塗而形成 抗蝕劑膜之態樣的示意圖。 圖4A是顯示因產生彗星缺陷而使細微不規則結構不 均勻之態樣的剖視圖。 圖4B是顯示因產生彗星缺陷而使細微不規則結構不 均勻之態樣的剖視圖。 圖4C是顯示因產生彗星缺陷而使細微不規則結構不 均勻之態樣的剖視圖。 圖5A是顯示根據本發明實施例的一種LED晶圓製造 製程的流程圖。 圖5B是顯示根據本發明實施例的一種LED晶圓製造 製程的流程圖。 圖6是LED晶圓之平面圖，其中本發明之一實施例所 涉及之突起已被移除。 圖7是顯示藉由拋光而移除突起以形成粗糙表面部之 態樣的示意圖。 圖8A是顯示當使用突起已被移除之LED晶圓時均勻 地形成細微不規則結構之態樣的剖視圖。 25 201125164 地米^ 8B是齡纽較起已被移除之LED晶圓時均勺 地升^田微不規則結構之態樣的剖視圖。 吟勺勾 地护是齡纽肖狄已郷狀LED晶圓時均勺 地形成細微不規則結構之態樣的剖視圖。 ^ 結構錄地辭轉本翻倾狀咖元件之 圖。圖H)是猶之半導體晶體層之表面的局部放大 卜圖11是聽描述#由缝㈣生之彗星缺陷的平面 【主要元件符號說明】 10 :磊晶晶圓/LED晶圓 l〇A : LED 晶圓 12 .定向平面 14 I表面 14A :表面 16 :不被使用區域 18 :元件形成區域 20 : LED晶片 20A ·· LED 元件 22 :單晶體基板 24 : η型半導體層 26 :發光層 28 :ρ型半導體層 26 201125164 30 :半導體晶體層 32 :部分 34 :突起 36 :中心點 38 :分配器 40 :塗覆液 42 :抗蝕劑膜 43 :圓形孔 44 :圓形孔 45 : L形刻度尺 46 :缺陷部 461 :缺陷部 462 :缺陷部 463 :缺陷部 48 :鉛筆磨具 48A :拋光部 50 :粗糙表面部 5(^ :粗糙表面部 5〇2 :粗糖表面部 5〇3 .粗f邊表面部 52 接觸層 54 p側電極 56 η側電極 58 保護膜 201125164 60 :部分 62 :圓形孔 70::彗星缺陷 702 :彗星缺陷 703 :彗星缺陷 A :方向 L :旋轉轴線 R1 :缺陷部之直徑 R2 :粗糙表面部之直徑 X:圓形孔之孔直徑 Y:圓形孔之間距 Z:圓形孔之深度 28Laser treatment is performed on the entire surface of the resist film by using an exposure apparatus (trade name: "NE〇_1〇〇〇", manufactured by PulseTech Co., Ltd.) equipped with a laser optical system, thereby 〇 4 microns between 23 201125164 A circular hole having an opening diameter of 0.15 μm is formed, wherein the wavelength of the laser optical system is 405 nm. The surface of the laser-treated led wafer was etched with SF6 gas using a parallel plate type RIE system (trade name: "1〇NL", manufactured by SUMC Co., Ltd.). When the surface of the LED B曰曰 circle of the AFM syllabary was removed, it was confirmed that the photonic crystal structure was obtained, and the photonic crystal was formed, and the hole diameter was 〇2 μm and the depth was 0.2 μm. Round hole. When the in-plane emission distribution of the LED is rounded, the light distribution at a forward current of 3.5 volts is 4.5 mW to 6.0 mW. <Comparative Example 1> 2 and Example 1 her method, but using an LED wafer whose hearing defect was not removed, formed an anti-(tetra) film, followed by photonic crystal treatment using a resist film. In the formation of anti-aliasing, it is confirmed that the protuberance week _ Lai Xing is defective. Thereafter, the shape of the circular hole formed by the button engraving is indefinite and deformed depending on the position, and the depth of the defective portion of the star is several tens of nanometers. This is the same as when a fine irregular structure is not formed. When the in-plane luminescence distribution of the equivalent wafer is measured, the light distribution at a forward current of 3.5 volts is 4 〇 mW to 6 毫 mW. It was found that the light amount distribution was wider and the light amount fluctuated more than the example 丨. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to be used by those skilled in the art, and without departing from the spirit of the invention, it may be modified and full. The scope of the invention is as follows: please refer to the squad defined by the full-time enclosure. ... [Simple description of the schema] 24 201125164 Figure 1A is a diagram for explaining the LED wafer used as a raw material. A diagram of an LED wafer used as a raw material. Figure ic is a diagram for explaining an LED wafer used as a raw material. Fig. 2A is a perspective view showing a state in which a defect portion exists on the surface of the LED wafer. It is an enlarged view of the defect portion of Fig. 2A. Fig. 3 is a schematic view showing a state in which a resist film is formed by spin coating on the surface of the LED wafer. Fig. 4A shows that the defect is caused by the occurrence of a comet defect. A cross-sectional view showing a state in which the regular structure is uneven. Fig. 4B is a cross-sectional view showing a state in which a fine irregular structure is uneven due to a comet defect. Fig. 4C is a view showing a state in which a fine irregular structure is uneven due to a comet defect. a cross-sectional view of the same. Figure 5 A is a flow chart showing an LED wafer manufacturing process according to an embodiment of the present invention. Fig. 5B is a flow chart showing an LED wafer manufacturing process according to an embodiment of the present invention. The protrusion involved in one embodiment of the invention has been removed. Fig. 7 is a schematic view showing a state in which the protrusion is removed by polishing to form a rough surface portion. Fig. 8A is a view showing the LED crystal which has been removed when the protrusion is used. A cross-sectional view of a state in which a minute irregular structure is uniformly formed in a circle. 25 201125164 地米^ 8B is a sectional view of a state in which the number of the irregularly structured structures of the field is increased.吟 勾 地 是 是 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽It is a partial enlargement of the surface of the semiconductor crystal layer of Juss. Figure 11 is the plane of the comet defect produced by the slit (four). [Main component symbol description] 10: Epitaxial wafer / LED wafer l〇A : LED wafer 12. Orientation plane 14 I surface 14A: surface 16: no Use area 18: element formation region 20: LED wafer 20A · LED element 22: single crystal substrate 24: n-type semiconductor layer 26: light-emitting layer 28: p-type semiconductor layer 26 201125164 30: semiconductor crystal layer 32: portion 34: protrusion 36 : Center point 38: Distributor 40: Coating liquid 42: Resist film 43: Round hole 44: Round hole 45: L-shaped scale 46: Defective portion 461: Defective portion 462: Defective portion 463: Defective portion 48: pencil grindstone 48A: polished portion 50: rough surface portion 5 (^: rough surface portion 5〇2: rough sugar surface portion 5〇3. thick f side surface portion 52 contact layer 54 p side electrode 56 n side electrode 58 protection Membrane 201125164 60 : Section 62 : Round hole 70 :: Comet defect 702 : Comet defect 703 : Comet defect A : Direction L : Rotation axis R1 : Defect portion diameter R2 : Rough surface portion diameter X: Round hole Hole diameter Y: distance between round holes Z: depth of round hole 28