WO2011043244A1 - Dispositif de formation de film, tête de formation de film et procédé de formation de film - Google Patents

Dispositif de formation de film, tête de formation de film et procédé de formation de film Download PDF

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Publication number
WO2011043244A1
WO2011043244A1 PCT/JP2010/067136 JP2010067136W WO2011043244A1 WO 2011043244 A1 WO2011043244 A1 WO 2011043244A1 JP 2010067136 W JP2010067136 W JP 2010067136W WO 2011043244 A1 WO2011043244 A1 WO 2011043244A1
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Prior art keywords
film forming
forming material
vapor
organic film
inorganic film
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PCT/JP2010/067136
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English (en)
Japanese (ja)
Inventor
裕司 小野
輝幸 林
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東京エレクトロン株式会社
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Priority to CN201080044833.8A priority Critical patent/CN102575347B/zh
Priority to JP2011535361A priority patent/JP5484478B2/ja
Publication of WO2011043244A1 publication Critical patent/WO2011043244A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process

Definitions

  • the present invention relates to a film forming apparatus that performs co-evaporation by supplying a mixed vapor of an organic film forming material and an inorganic film forming material to a substrate to be processed, a film forming head that forms the film forming apparatus, and a film forming method.
  • Organic EL elements using electroluminescence (EL) have been developed.
  • Organic EL elements have lower power consumption than cathode ray tubes, etc., and are self-luminous, so they have advantages such as better viewing angle than liquid crystal displays (LCDs), and future development is expected. Yes.
  • the most basic structure of the organic EL element is a sandwich structure in which an anode (anode) layer, a light emitting layer and a cathode (cathode) layer are formed on a glass substrate.
  • anode anode
  • a light emitting layer a light emitting layer
  • a cathode cathode
  • ITO Indium Tin Oxide
  • an electron transport layer and an electron injection layer are sequentially formed on the light emitting layer in order to bridge the movement of electrons from the cathode layer to the light emitting layer.
  • It is a membrane.
  • An alkali metal having a low work function such as cesium Cs or lithium Li is used for the electron injection layer, and an electron transporting organic material such as Alq3q is used for the electron transport layer.
  • the electron transport layer and the electron injection layer are each formed by vapor deposition.
  • Patent Documents 1 and 2 disclose a film forming apparatus for manufacturing the organic EL element described above.
  • the film forming apparatus includes a processing chamber that accommodates a glass substrate that is a substrate to be processed, and a vapor generating unit that generates vapor of a film forming material is disposed outside the processing chamber. Inside the processing chamber, a vapor deposition head is provided which is connected to a vapor generation unit through a pipe and ejects vapor of a film forming material generated in the vapor generation unit toward a glass substrate.
  • the electron injection layer and the electron transport layer are formed by vapor deposition on the cathode side of the organic EL element, respectively, but after the formation of the electron transport layer made of an organic film forming material, Since the electron injection layer is made of an inorganic film forming material, the energy barrier at the interface between the electron transport layer and the electron injection layer is increased, and sufficient light emission intensity cannot be obtained unless the drive voltage is increased. There was a problem.
  • the internal pressure of the vapor deposition head particularly the vapor pressure of the organic film forming material is 10 Pa
  • the internal pressure of the processing chamber is 1 ⁇ 10 ⁇ 2 Pa
  • the temperature of the film forming material is 450 ° C. Since the vapor pressure at 450 ° C. of lithium Li and cesium Cs used for the electron injection layer is higher than 10 ⁇ 2 Pa, the vapor pressure of sodium Na is about 10 2 Pa, and the vapor pressure of calcium is higher than 10 4 Pa, in principle, Each inorganic film forming material can be ejected from the vapor deposition head into the processing chamber.
  • the vapor pressure of lithium Li which is particularly desired to be used, is extremely small and co-evaporation with the same concentration as the organic film-forming material cannot be performed, so that the energy barrier at the interface cannot be lowered.
  • the temperature of the film forming material it is necessary to set the temperature of the film forming material to 700 ° C. or higher. It is difficult to perform vapor deposition.
  • the present invention has been made in view of such circumstances, and enables co-evaporation of an organic film-forming material and an inorganic film-forming material under the required conditions without the above-described restrictions. Therefore, it is possible to improve the electron injection efficiency by reducing the energy barrier at the interface between the electron transport layer and the electron injection layer, and to manufacture an organic EL device with improved light emission intensity.
  • a film forming apparatus is provided in a processing chamber that accommodates a substrate to be processed, a vapor generating unit that generates vapor of an organic film forming material, and is generated in the vapor generating unit. And an organic film forming material supply unit that jets the vapor of the organic film forming material directed toward the substrate to be processed, in an inorganic film forming apparatus that jets the vapor of the inorganic film forming material toward the substrate to be processed.
  • a film material supply unit, and the organic film formation material supply unit and the inorganic film formation material supply unit are arranged such that the portions to be ejected of the organic film formation material and the inorganic film formation material overlap on the substrate to be processed. It is characterized by.
  • the film-forming head according to the present invention is a film-forming head that supplies vapor of a film-forming material toward a substrate to be processed, and an organic film-forming material supply unit that ejects vapor of the organic film-forming material toward the substrate to be processed And an inorganic film forming material supply unit that ejects vapor of the inorganic film forming material toward the substrate to be processed, and the organic film forming material supply unit and the inorganic film forming material supply unit include the organic film forming material and The inorganic film-forming material is ejected at a location where it overlaps on the substrate to be processed.
  • the film-forming head according to the present invention is a film-forming head that supplies vapor of a film-forming material toward a substrate to be processed, and an organic film-forming material supply unit that ejects vapor of the organic film-forming material toward the substrate to be processed
  • An inorganic film forming material supply unit that ejects vapor of the inorganic film forming material toward the substrate to be processed; an organic film forming material vapor that is injected from the organic film forming material supply unit; and the inorganic film forming material
  • a mixing chamber for mixing the vapor of the inorganic film forming material ejected from the supply unit, and the mixing chamber passes the mixed vapor of the organic film forming material and the inorganic film forming material and supplies the mixed vapor to the substrate to be processed. It has an opening.
  • the film forming method according to the present invention is a film forming method for forming a film by storing a substrate to be processed in a processing chamber and supplying vapor of a film forming material toward the stored substrate to be processed.
  • the organic film forming material supply unit and the inorganic film forming material supply unit apply the organic film forming material and the inorganic film forming method to the substrate to be processed so that the portions to be ejected overlap on the substrate to be processed. Blow out material vapor. Since the vapor of the organic film forming material and the vapor of the inorganic film forming material are ejected separately, for example, it is possible to mix the organic film forming material vapor at 450 ° C. and the inorganic film forming material vapor at 700 ° C. Become.
  • the pressures of the organic film-forming material and the inorganic film-forming material ejected into the processing chamber are reduced, and each constituent molecule and atom do not collide, so that the organic film-forming material is not burned out. Accordingly, the vapor of the organic film forming material and the vapor of the inorganic film forming material are mixed and formed on the substrate to be processed. Therefore, according to the film forming apparatus, the film forming head, and the film forming method of the present invention, the energy barrier at the interface in the electron transport layer or the electron injection layer of the organic EL element can be lowered, and the electron injection efficiency can be improved. It becomes possible.
  • the vapor of the organic film forming material ejected from the organic film forming material supply unit and the vapor of the inorganic film forming material ejected from the inorganic film forming material supply unit are mixed in the mixing chamber, The mixed vapor is supplied to the substrate to be processed through the opening. Accordingly, it is possible to form a substrate to be processed by uniformly mixing the organic film-forming material and the inorganic film-forming material as compared with the case where the mixing chamber having the opening is not provided.
  • the present invention it becomes possible to co-evaporate the organic film-forming material and the inorganic film-forming material under the required conditions, and the co-evaporation enables the energy of the interface in the electron transport layer and the electron injection layer of the organic EL element. It is possible to improve the electron injection efficiency by reducing the barrier, and it is possible to manufacture an organic EL element with improved emission intensity.
  • FIG. 6 is a sectional view taken along line IV-IV in FIG. 5. It is sectional drawing which shows typically the structure of an inorganic film-forming material supply part. It is sectional drawing which showed typically the organic EL element formed into a film using the film-forming system which concerns on this Embodiment.
  • FIG. 6 is a side sectional view schematically showing a configuration of a film forming head according to Modification 1.
  • FIG. 6 is a side sectional view of a film forming head according to Modification 2.
  • FIG. It is explanatory drawing which showed notionally arrangement
  • It is a side view of a heating apparatus. It is a front view of a heating apparatus.
  • FIG. 13 is a sectional view taken along line XV-XV in FIG. 12.
  • FIG. 10 is a side sectional view of a film forming head according to Modification 3.
  • FIG. 10 is a side sectional view of a film forming head according to Modification 3.
  • FIG. 1 is an explanatory diagram conceptually illustrating the configuration of a film forming system according to the present embodiment.
  • the film forming system according to the present embodiment includes a loader 90, a transfer chamber 91, a film forming apparatus 1, a transfer chamber 92, an etching apparatus 93, which are arranged in series in the transport direction of the substrate G to be processed (see FIG. 3).
  • a transfer chamber 94, a sputtering apparatus 95, a transfer chamber 96, a CVD apparatus 97, a transfer chamber 98, and an unloader 99 are configured.
  • the loader 90 is an apparatus for carrying the substrate to be processed G, for example, the substrate to be processed G on which the ITO layer 31 is previously formed, into the film forming system.
  • the transfer chambers 91, 92, 94, 96, and 98 are apparatuses for delivering the substrate to be processed G between the processing apparatuses.
  • the film forming apparatus 1 forms a hole injection layer, a hole transport layer, a blue light emitting layer, a red light emitting layer, a green light emitting layer, and an electron transport layer or an electron injection layer on the substrate G to be processed by vacuum deposition. It is a device. Details will be described later.
  • the etching apparatus 93 is an apparatus for adjusting the shape of the organic layer to a predetermined shape.
  • the sputtering apparatus 95 is an apparatus that forms a cathode layer on an electron transport layer by sputtering, for example, silver Ag, magnesium Mg / silver Ag alloy using a pattern mask.
  • the CVD apparatus 97 is an apparatus for forming a sealing layer made of a nitride film or the like by CVD or the like and sealing various films formed on the substrate G to be processed.
  • the unloader 99 is an apparatus for carrying the substrate to be processed G out of the film forming system.
  • FIG. 2 is a perspective view schematically showing the configuration of the film forming apparatus 1
  • FIG. 3 is a side sectional view schematically showing the configuration of the film forming apparatus 1.
  • the film forming apparatus 1 includes a processing chamber 11 for accommodating a substrate to be processed G and performing a film forming process on the substrate to be processed G inside.
  • the processing chamber 11 has a hollow, substantially rectangular parallelepiped shape whose longitudinal direction is the transport direction, and is made of aluminum, stainless steel, or the like.
  • a surface of one end in the longitudinal direction of the processing chamber 11 (a surface on the back side in FIG. 2) is formed with a carry-in port 11a for carrying the substrate G to be processed into the processing chamber 11, and a surface on the other end in the longitudinal direction.
  • a carry-out port 11b for carrying out the substrate G to be processed out of the processing chamber 11 is formed on the front surface in FIG.
  • the carry-in port 11a and the carry-out port 11b have a slit shape having a longitudinal direction orthogonal to the carry-in direction, and the longitudinal directions of the carry-in port 11a and the carry-out port 11b are substantially the same.
  • the longitudinal direction of the carry-in port 11a and the carry-out port 11b is referred to as a horizontal direction
  • the direction perpendicular to the horizontal direction and the conveyance direction is referred to as a vertical direction.
  • an exhaust hole 11 c is formed at an appropriate location of the storage chamber, and a vacuum pump 15 disposed outside the processing chamber 11 is connected to the exhaust hole 11 c through an exhaust pipe 14.
  • a vacuum pump 15 disposed outside the processing chamber 11 is connected to the exhaust hole 11 c through an exhaust pipe 14.
  • the inside of the processing chamber 11 is depressurized to a predetermined pressure, for example, 10-2 Pa.
  • the transfer device 12 includes a guide rail 12a provided at the bottom of the processing chamber 11 along the longitudinal direction, and a moving member 12b that is guided by the guide rail 12a and is movable in the transfer direction, that is, the longitudinal direction. And a support base 12c that is provided at the upper end of the moving member 12b and supports the substrate G to be processed so as to be substantially parallel to the bottom.
  • An electrostatic chuck that holds the substrate to be processed G, a substrate heater to be processed to keep the temperature of the substrate to be processed G constant, a refrigerant pipe, and the like are provided inside the support base 12c.
  • the support base 12c is configured to move by a linear motor.
  • a plurality of vapor deposition heads 13 for forming a film on the substrate G to be processed by a vacuum vapor deposition method are provided in the upper part of the processing chamber 11 and in the substantially central part in the transport direction.
  • the vapor deposition head 13 includes a first head 13a for vapor-depositing a hole injection layer, a second head 13b for vapor-depositing a hole transport layer, a third head 13c for vapor-depositing a blue light-emitting layer, a fourth head 13d for vapor-depositing a red light-emitting layer, and green.
  • the fifth head 13e for depositing the light emitting layer and the film forming head 2 according to the present invention are arranged in order along the transport direction.
  • the film formation head 2 is an apparatus for co-evaporating an organic film formation material, for example, Alq3, which is a material for electron transport, and an inorganic film formation material, for example, Li, for a material for electron injection.
  • a vapor generating unit 17 disposed outside the processing chamber 11 is connected to the membrane head 2 via a pipe 16.
  • the steam generation unit 17 includes a container 17a and a heating mechanism 17b disposed inside the container 17a.
  • the heating mechanism 17b has a container-shaped portion that can store the vapor of the organic film forming material that is the material of the electron transport layer, and is configured to heat the organic film forming material with electric power supplied from the power source 17c. . For example, it is configured to heat with an electric resistor. In this manner, the organic film forming material stored in the heating mechanism 17b is heated to generate vapor of the organic film forming material.
  • the container 17a is connected to a transport gas supply pipe 17d for supplying a transport gas made of an inert gas, for example, a rare gas such as Ar, to the substrate G to be processed.
  • the container 17a is connected to the container 17a from the transport gas supply pipe.
  • the vapor of the organic film forming material is supplied from the vapor generating unit 17 to the film forming head 2 via the pipe 16 together with the transport gas supplied to the film forming head 2.
  • the first to fifth heads 13a, 13b, 13c, 13d, and 13e are configured such that a vapor of a predetermined organic film forming material is supplied from a vapor generation unit (not shown).
  • FIG. 4 is a partially broken perspective view schematically showing the film forming head 2 according to the present embodiment
  • FIG. 5 is a side sectional view of the film forming head 2
  • FIG. 6 is a line IV-IV in FIG. It is sectional drawing.
  • the film forming head 2 includes a housing 21, an organic film forming material supply unit 22, an inorganic film forming material supply unit 24, a mixing chamber 23 for mixing the organic film forming material and the vapor of the inorganic film forming material,
  • the power supply members 25a and 25b and the heat retaining heaters 27a, 27b and 27c are provided.
  • the housing 21 is made of, for example, aluminum or stainless steel, has a horizontally long, substantially rectangular parallelepiped shape with a small width in the transport direction, and includes a bottom plate portion 21a, a side wall 21b, and a top plate portion 21c.
  • the inside of the housing 21 is vacuum.
  • the organic film forming material supply unit 22 includes an inflow chamber 22a into which the organic film forming material flows.
  • the inflow chamber 22 a is smaller in size than the casing 21, has a hollow substantially rectangular parallelepiped shape with one side notched on the side of the outlet 11 b side (lower right in FIG. 5), and is accommodated inside the casing 21.
  • the inflow chamber 22a is made of stainless steel, for example, and either the outer or inner surface of the inflow chamber 22a, or the outer and inner surfaces are plated with copper. Since copper plating improves thermal conductivity, radiant heat radiated from heat retaining heaters 27a and 27b, which will be described later, can be evenly transmitted to the inflow chamber 22a.
  • An organic film forming material supply pipe 22b through which the vapor of the organic film forming material generated in the vapor generating unit 17 flows into the inflow chamber 22a is connected to a substantially central portion of the upper part of the inflow chamber 22a.
  • a plurality of organic film-forming material ejection holes 22c are uniformly formed across the both ends in the lateral direction in the inclined portion corresponding to the cutout portion of the inflow chamber 22a.
  • the arrangement method of the organic film forming material ejection holes 22c is not particularly limited as long as the vapor of the organic film forming material can be uniformly ejected in the lateral direction.
  • the plurality of organic film forming material ejection holes 22c may be arranged side by side in the horizontal direction, arranged in a staggered manner along the horizontal direction, or may be a slit.
  • the mixing chamber 23 has a pentagonal, horizontally long mixing chamber lower portion 23a and an upper side of the mixing chamber lower portion 23a in a side view with one side of the upper portion on the carry-in port 11a (the upper left portion in FIG. 5) as an inclined portion. It is comprised with the mixing chamber upper part 23b of a hollow rectangular parallelepiped shape. Further, the outer and inner surfaces of the mixing chamber 23 are plated with copper. The mixing chamber upper portion 23b and the mixing chamber lower portion 23a communicate with each other.
  • An inclined portion of the organic film forming material supply unit 22 is joined to the inclined portion of the mixing chamber lower portion 23a so as to be separated from the mixing chamber upper portion 23b.
  • the film forming material is configured to be ejected.
  • the inclined part of the organic film forming material supply unit 22 constitutes a part of the inclined part of the mixing chamber lower part 23a.
  • the bottom of the mixing chamber lower part 23 a is configured to share the bottom plate part 21 a of the housing 21.
  • a slit is an example of the shape of the opening part 23c, and you may comprise the opening part 23c in the some hole arrange
  • the plurality of holes need not be arranged in a straight line, and may be staggered.
  • the mixing chamber upper portion 23b has a shorter width than the mixing chamber lower portion 23a, and power supply members 25a and 25b for supplying power to the inorganic film forming material supply unit 24 are connected to both side surfaces in the horizontal direction.
  • Conductive support members 26 a and 26 b that support the inorganic film forming material supply unit 24 are provided inside the mixing chamber 23.
  • the support members 26a and 26b are substantially rectangular parallelepiped plates, and are connected to the mixing chamber upper portion 23b from the lateral direction.
  • the plate pieces of the support members 26 a and 26 b protruding into the mixing chamber upper portion 23 b are electrically connected to the inorganic film forming material supply unit 24.
  • Bolt holes are formed in the plate pieces of the support members 26a and 26b protruding to the outside of the mixing chamber upper portion 23b, and one ends of the power supply members 25a and 25b are fixed with bolts.
  • the power supply members 25 a and 25 b are arranged in such a posture that the longitudinal direction is the vertical direction, and the other end side protrudes upward from the top plate portion 21 c of the housing 21.
  • the power feeding members 25a and 25b have a conductive portion, and supply power from the outside of the housing 21 to the inorganic film forming material supply portion 24 via the support members 26a and 26b inside the housing 21. is there.
  • FIG. 7 is a cross-sectional view schematically showing the configuration of the inorganic film forming material supply unit 24.
  • the inorganic film forming material supply unit 24 is a so-called alkaline dispenser and includes a hollow inorganic film forming material casing 24a.
  • a plurality of inorganic film-forming material ejection holes 24b are formed uniformly along the longitudinal ends of the lower surface of the inorganic film-forming material casing 24a.
  • an inorganic film forming material that is an electron injection layer material, for example, a non-metallic square dish-shaped material charging portion 24c into which an alkali metal is charged is disposed inside the inorganic film forming material casing 24a.
  • the material charging unit 24c is supported by the heating device 24d and fixed by the fixing member 24i with the mounting surface facing upward.
  • the heating device 24d has a metal base 24e having a groove on the upper surface into which the material charging part 24c is fitted, and heaters 24f, 24g, and 24h are embedded in the base 24e.
  • the heaters 24f, 24g, and 24h are connected to the power supply members 25a and 25b through the support members 26a and 26b, and indirectly heat the material charging unit 24c through the base material 24e of the heating device 24d.
  • the inorganic film forming material supply unit 24 includes heaters 24j, 24k, 24l, and 24m embedded in the inorganic film forming material casing 24a.
  • the heating device 24d and the material input unit 24c generate heat by the power supply, and the inorganic film forming material input to the material input unit 24c is heated and evaporated.
  • steam of the evaporated inorganic film-forming material is ejected below from the inorganic film-forming material ejection hole 24b formed in the inorganic film-forming material casing 24a.
  • the base material 24e and the material charging unit 24c can be heated by the heaters 24f, 24g, and 24h without energizing the material charging unit 24c, and the alkali metal can be heated. More preferable from the viewpoint. It is also possible to configure such that the metal material charging portion 24c is directly energized. Needless to say, the configuration of the inorganic film forming material supply unit 24 is not limited to the above configuration. For example, an accommodation cylinder for accommodating the inorganic film forming material may be provided, an inorganic film forming material ejection hole may be formed in the lower peripheral surface portion, and the entire accommodation cylinder may be configured by an electric resistor that is heated by a voltage supplied from the outside. .
  • the heat retaining heater 27a is an electrical resistance heat type heater, and is routed so as to oppose the surface and the lower portion of the inflow chamber 22a on the carry-in port 11a side, and the temperature of the inflow chamber 22a is maintained at a predetermined temperature or more by radiant heat. It is configured as follows. The predetermined temperature may be set so that the organic film forming material does not condense. Similarly, the heat retaining heater 27b is routed between the inflow chamber 22a and the mixing chamber 23, and the heat retaining heater 27c is routed so as to face the surface of the mixing chamber 23 on the carry-out port 11b side. The heat retaining heater 27b heats the inflow chamber 22a and the mixing chamber 23, and the heat retaining heater 27c heats the mixing chamber 23.
  • temperature sensors are disposed at appropriate locations in the inflow chamber 22a and the mixing chamber 23, and power supply to the heat retaining heaters 27a, 27b, and 27c is controlled based on the detection results of the temperature sensors.
  • an electric resistance type heater has been described as an example, if the inflow chamber 22a and the mixing chamber 23 can be heated, an induction heating method or a heat medium may be used.
  • FIG. 8 is a cross-sectional view schematically showing the organic EL element 3 formed using the film forming system according to the present embodiment.
  • the substrate to be processed G carried into the storage chamber of the film forming apparatus 1 is electrostatically adsorbed on the support 12c shown in FIG. 3 with the surface of the substrate, that is, the ITO layer 31 facing upward, and kept at a constant temperature. Is done. Note that, before the substrate G to be processed is loaded, the inside of the processing chamber 11 is previously depressurized to a predetermined pressure, for example, 10 ⁇ 2 Pa or less by driving the vacuum pump 15. Then, the support base 12c moves in the transport direction along the guide rail 12a, and the substrate G to be processed passes below the vapor deposition head 13. In the process of passing under the vapor deposition head 13, as shown in FIG.
  • the substrate G to be processed has a hole injection layer 33a, a hole transport layer 33b, a blue light emitting layer 33c, a red light emitting layer 33d, and a green light emitting layer 33e. Films are sequentially formed.
  • the vapor deposition head 2 at the final stage is supplied with a mixed vapor obtained by mixing the vapors of the organic film-forming material and the inorganic film-forming material
  • the substrate G to be processed has the organic film-forming material and the inorganic film-forming material.
  • Co-evaporation is performed. That is, an electron transport layer 33f in which an organic film forming material and an inorganic film forming material are mixed is formed on the substrate G to be processed.
  • the electron transport layer 33f does not form an interface, that is, an energy barrier formed when an organic film forming material and an inorganic film forming material are sequentially deposited. Therefore, the electron injection efficiency can be improved and the emission intensity is improved.
  • the operation of the film forming head 2 is as follows. First, the vapor of the organic film forming material flows into the inflow chamber 22a through the pipe 16 and the organic film forming material supply pipe 22b from the vapor generating unit 17 outside the storage chamber. Note that the vapor pressure of the organic film forming material is, for example, 10 Pa. Since the internal pressure of the mixing chamber 23 is about 10 ⁇ 2 Pa, the vapor of the organic film forming material that has flowed into the inflow chamber 22 a is ejected from the organic film forming material ejection hole 22 c into the mixing chamber 23.
  • the accommodation cylinder 24a of the inorganic film forming material supply unit 24 is supplied from a power source (not shown) to the accommodation cylinder 24a of the inorganic film forming material supply unit 24 through the power supply members 25a and 25b and the support members 26a and 26b.
  • the storage cylinder 24a generates heat by the power supply, and the inorganic film forming material stored in the storage cylinder 24a is heated and evaporated.
  • the vapor pressure of the inorganic film forming material is controlled by adjusting the power supply amount.
  • steam of the evaporated inorganic film-forming material spouts downward from the inorganic film-forming material ejection hole 24b formed in the storage cylinder 24a.
  • the ejected vapors of the organic film forming material and the inorganic film forming material are mixed in the mixing chamber 23, and the mixed vapor obtained by mixing is supplied toward the substrate G to be processed in the processing chamber 11 through the opening 23c. Is done. Note that the pressure or temperature of the organic film-forming material and inorganic film-forming material ejected into the mixing chamber 23 decreases, and the constituent molecules and atoms do not collide with each other frequently, so that the organic film-forming material is not burned out. .
  • the substrate G to be processed after the film formation process is carried into the etching apparatus 93 by the transfer chamber 92.
  • the etching apparatus 93 the shape and the like of various films are adjusted.
  • it is carried into the sputtering apparatus 95 by the transfer chamber 94.
  • the sputtering apparatus 95 the cathode layer 32 is formed.
  • the substrate G to be processed is carried into the CVD apparatus 97 by the transfer chamber 96.
  • each layer formed on the substrate G to be processed is sealed with a sealing layer 34 such as a nitride film.
  • the target substrate G subjected to the sealing process is carried out of the film forming system from the unloader 99 via the transfer chamber 98.
  • an organic film forming material Alq3 having a vapor pressure of 10 Pa at 450 ° C. is supplied to the inflow chamber 22a and ejected, and an inorganic film forming material Li having a vapor pressure of 10 Pa is ejected and mixed at 700 ° C.
  • an organic film forming material Alq3 having a vapor pressure of 10 Pa at 450 ° C. is supplied to the inflow chamber 22a and ejected, and an inorganic film forming material Li having a vapor pressure of 10 Pa is ejected and mixed at 700 ° C.
  • the energy barrier at the interface between the electron transport layer and the electron injection layer of the organic EL element 3 can be reduced, the electron injection efficiency can be improved, and the organic EL element 3 with improved emission intensity can be manufactured. .
  • the mixing chamber 23 in which the opening 23c is formed is provided, it is possible to form the substrate G to be processed by more uniformly mixing the organic film forming material and the inorganic film forming material.
  • the electron injection efficiency can be improved, and the organic EL element 3 with improved emission intensity can be manufactured.
  • the vapor of the mixed organic film forming material and inorganic film forming material is supplied to the substrate G to be processed from the slit-shaped opening 23c. Therefore, it is possible to form a film with the mixed vapor on the linear region of the substrate G to be processed.
  • the opening 23c includes a plurality of holes arranged in one direction.
  • the inorganic film forming material ejection holes 24b and the organic film forming material ejection holes 22c are arranged in parallel in the longitudinal direction of the opening 23c. Therefore, it becomes possible to form the substrate G to be processed by more uniformly mixing the organic film forming material and the inorganic film forming material.
  • the inorganic film forming material ejection holes 24b and the organic film forming material ejection holes 22c are arranged in substantially the same direction as the one direction of the opening. Similar effects can be obtained by arranging them in parallel.
  • the organic film forming material ejection holes 22c and the inorganic film forming material ejection holes 24b are arranged side by side in substantially the same direction as the longitudinal direction of the opening 23c, a co-deposition layer of the organic film forming material and the inorganic film forming material is formed.
  • the film uniformity can be further improved.
  • the arrangement width of the inorganic film forming material ejection holes 24b is narrower than the arrangement width of the organic film formation material ejection holes 22c, the lateral dimension of the film formation head 2 can be reduced.
  • the mixing chamber 23 is provided. However, if the vapors of the organic film forming material and the inorganic film forming material can be ejected to substantially the same place, the mixing chamber 23 is eliminated. Also good. Moreover, you may comprise only the partition plate which has an opening part.
  • the organic film forming material supply unit 22 and the inorganic film forming material supply unit 24 may be juxtaposed.
  • the organic film forming material supply unit 22 and the inorganic film forming material supply unit 24 may each be configured in a cylindrical shape and arranged coaxially.
  • the mounting posture of the organic film forming material supply unit 22 and the inorganic film forming material supply unit 24 is not particularly limited as long as the mixed vapor of the organic film forming material and the inorganic film forming material can be supplied from the opening.
  • FIG. 9 is a side sectional view schematically showing the configuration of the film forming head 102 according to the first modification.
  • the film forming apparatus 1 according to Modification 1 includes a housing 121, an organic film forming material supply unit 122, a mixing chamber 123, an inorganic film forming material supply unit 24, power supply members 25a and 25b, and heat insulation. Heaters 27a, 27b, 27c, and 27d are provided.
  • the film forming apparatus 1 according to the modification 1 further includes a heat medium flow path 28a through which a heat medium for cooling the inflow chamber 122a is passed.
  • the heat medium flow path 28a is, for example, a water-cooled flow path through which water flows. Further, the heat medium passage 28a is covered with a water-cooled heat shield plate 28b.
  • the bottom plate portion 121a, the side wall 121b and the top plate portion 121c of the storage chamber, and the mixing chamber lower portion 123a are provided with two heat retaining heaters 27b and 27d and a heat medium passage 28a between the inflow chamber 122a and the mixing chamber 123 in the transport direction.
  • the dimensions are such that they can be placed side by side.
  • One heat retaining heater 27b is in close proximity to the inflow chamber 122a, and the other heat retaining heaters 27d and 27c are in close proximity to the mixing chamber 123.
  • the heat medium passage 28a is routed so as to be positioned between the inflow chamber 122a and the mixing chamber 123, more specifically, between the heat retaining heaters 27b and 27d.
  • the operation of the refrigerant cycle for causing the heat medium to flow through the heat medium flow path 28a is controlled by a control unit (not shown).
  • the temperature of the inflow chamber 122a is controlled to be equal to or lower than the temperature at which the organic film forming material is not burned by passing the heat medium, particularly the refrigerant, through the heat medium flow passage 28a. Can do. Condensation and burning of the organic film forming material can be prevented by the heat retaining heaters 27b and 27d and the heat medium passage 28a.
  • FIG. 10 is a side sectional view of the film forming head 202 according to the second modification.
  • the film forming head 202 according to the second modification includes an organic film forming material supply unit 4 that ejects vapor of an organic film forming material toward the substrate G to be processed, and a vapor of inorganic film forming material toward the substrate G to be processed.
  • the organic film forming material supply unit 4 and the inorganic film forming material supply unit 5 are provided on the substrate G to be ejected with the organic film forming material and the inorganic film forming material supply unit 5. It is arranged so that it overlaps.
  • FIG. 11 is an explanatory view conceptually showing the arrangement of the ejection holes of the organic film forming material supply unit 4 and the inorganic film forming material supply unit 5.
  • the organic film forming material supply unit 4 is disposed outside the region where the inorganic film forming material supply unit 5 ejects the inorganic film forming material.
  • the region is below the plane including the inorganic film forming material ejection holes 51a for ejecting the inorganic film forming material from the inorganic film forming material supply unit 5, that is, on the substrate G to be processed.
  • a region below the straight line indicated by a two-dot chain line indicates a region where the inorganic film forming material is injected from the inorganic film forming material supply unit 5.
  • the organic film-forming material supply unit 4 is disposed above the straight line indicated by the two-dot chain line.
  • the organic film forming material supply unit 4 has an organic film forming material ejection hole 41a through which the vapor of the organic film forming material is jetted, and an organic film forming material casing 41 into which the vapor of the organic film forming material flows from the outside, Organic film forming material heaters 42a, 42b, 42c, 42d for heating the organic film forming material casing 41, and heat medium passages 43, 43 for allowing a heat medium such as air to flow therethrough are provided.
  • the film material heaters 42a, 42b, 42c, 42d and the heat medium passages 43, 43 are embedded in the organic film forming material casing 41 by heater fixing members 41b, 41c, 41d, 41e.
  • the housing 41 for organic film-forming material has a substantially rectangular frame member whose longitudinal direction is substantially perpendicular to the paper surface, and a hollow plate member extends from the substantially lower center of the frame member to the inorganic film-forming material supply unit 5 side. It protrudes.
  • An organic film forming material ejection hole 41a for ejecting the organic film forming material flowing through the inside of the frame member and the hollow plate member is formed at the tip of the hollow plate member.
  • a plurality of concave portions for embedding the organic film forming material heaters 42a and 42b and the heat medium passages 43a and 43b are formed on the outer surface of the hollow plate member.
  • the concave portion has, for example, a substantially arc shape in a side view.
  • the organic film forming material heaters 42a and 42b and the heat medium passages 43a and 43b are cylindrical in shape, and a good heat conductive film such as a carbon graphite film is wound around the outer peripheral surface thereof. It is inserted into a plurality of recesses.
  • the organic film forming material heaters 42a, 42b,... And the heat medium passages 43a, 43b fitted in the recesses are fixed by heater fixing members 41d, 41e.
  • the heater fixing members 41d and 41e are plate-like members corresponding to the outer surface of the hollow plate member, and have recesses that fit into the organic film forming material heaters 42a and 42b and the heat medium passages 43a and 43b. Yes.
  • the shape of the recess is substantially semicircular when viewed from the side, like the recess formed in the hollow plate member.
  • the heater fixing members 41d and 41e are fixed to the organic film forming material casing 41.
  • organic film forming material heaters 42c and 42d are fitted on the upper surface of the frame member, and are fixed to the frame member by heater fixing members 41b and 41c.
  • An organic film forming material supply pipe 40 through which the vapor of the organic film forming material generated by the vapor generating unit 17 flows into the organic film forming material casing 41 is connected to a substantially central part of the upper part of the frame member.
  • the organic film forming material supply pipe 40 is made of, for example, stainless steel, and either the outer or inner surface of the organic film forming material supply pipe 40 or the outer and inner surfaces are plated with copper in order to improve thermal conductivity. ing.
  • the film forming apparatus also includes supply pipe heaters 61 and 62 that heat the organic film forming material supply pipe 40.
  • the inorganic film forming material supply section 5 includes a hollow inorganic film forming material casing 51.
  • the inorganic film-forming material casing has a substantially hollow cylindrical shape whose longitudinal direction is substantially perpendicular to the paper surface, and the lower part projects toward the organic film-forming material supply unit 4 side.
  • a plurality of inorganic film-forming material ejection holes 51a are formed uniformly along the both ends in the longitudinal direction on the lower surface of the protruding portion.
  • a container in which an inorganic film forming material as an electron injection layer material, for example, an alkali metal is charged is supported by the heating device 54.
  • the container has a non-metallic square dish shape having an opening 57a on the upper surface for sending vapor of the inorganic film forming material into the inorganic film forming material casing 51.
  • FIG. 12 is a side view of the heating device 54
  • FIG. 13 is a front view of the heating device 54
  • FIG. 14 is a sectional view taken along the line XIV-XIV in FIG. 13
  • FIG. 15 is a sectional view taken along the line XV-XV in FIG. is there.
  • the heating device 54 has a first half 54a constituting the lower side of the heating device 54 and a second half 54b constituting the upper side of the heating device 54. On the upper surface of the second half 54b, A groove portion into which the container is fitted is formed.
  • the first and second halves 54a and 54b are made of metal.
  • a plurality of recesses for embedding the first heaters 55a and 55b and the first heat medium flow path 56 are formed on the upper surface of the first half 54a.
  • the concave portion has, for example, a substantially arc shape in a side view.
  • the outer shapes of the first heaters 55a and 55b and the first heat medium flow passage 56 are cylindrical, and good heat conductive films 55c, 55d, and 56a, for example, carbon graphite films are wound around the outer peripheral surfaces thereof. Are fitted into the plurality of recesses.
  • the first heaters 55a and 55b and the first heat medium flow path 56 fitted in the recess are fixed so as to be sandwiched by the second half 54b.
  • the second half 54 b is a plate-like member corresponding to the first half 54 a and has a recess that fits into the first heaters 55 a and 55 b and the first heat medium flow path 56.
  • the shape of the recess is substantially semicircular when viewed from the side, like the recess formed in the hollow plate member.
  • the first and second halves 54a and 54b are welded all around. Both ends of the first heat medium flow channel 56 are connected to an air cooling device (not shown), and the air cooling device allows air to flow through the first heat medium flow channels 56b and 56c.
  • the second heaters 52a, 52b, 52c, 52d, 52e, and 52f and the second heat medium flow channels 53a, 53b, and 53c are fitted into the outer peripheral surface of the inorganic film forming material casing 51.
  • a plurality of recesses are formed, and the second heaters 52a, 52b, 52c, 52d, 52e, 52f and the second heat medium passages 53a, 53b, 53c are fitted into the recesses.
  • the second heaters 52a, 52b, 52c, 52d, 52e, 52f and the second heat medium passages 53a, 53b, 53c are connected to the inorganic film forming material casing 51 by the heater fixing members 51b, 51c, 51d. Fixed to be embedded.
  • Both ends of the second heat medium passages 53a, 53b, 53c are connected to an air cooling device (not shown), and the air cooling device allows air to flow through the second heat medium passages 53a, 53b, 53c. ing.
  • the said air cooling apparatus is comprised so that the direction which lets air flow through may be switched periodically. By periodically switching the air, it is possible to prevent a temperature difference from occurring between one end and the other end of the inorganic film forming material casing 51 and improve the thermal uniformity in the longitudinal direction of the container 57. It becomes possible to make it.
  • FIG. 16 is a schematic view showing an arrangement example of the inorganic film forming material ejection holes 51a.
  • the inorganic film forming material ejection holes 51a are arranged in a staggered manner as shown in FIG. 16, for example. Needless to say, the arrangement of the inorganic film forming material ejection holes 51a is only an example.
  • the film forming head 202 includes an organic film forming material supply unit 4 and an inorganic film forming material supply unit 5, a heat shield plate 71 for an organic material supply unit that blocks heat radiated from the substrate G, and an inorganic film forming material.
  • a heat shield plate 72 for the supply unit 5 is provided.
  • the film formation head 202 is radiated between the organic film formation material supply unit 4 and the inorganic film formation material supply unit 5 with the organic film formation material supply unit 4 and the inorganic film formation material supply unit 5 separated from each other. It has a heat shield plate 8 that shields heat.
  • the heat shield 8 has a heat medium passage 8a for air cooling inside.
  • FIG. 17 is a block diagram showing a configuration example of the control device 59 that controls the operation of the film forming head 202.
  • the control device 59 has a control unit 59a such as a CPU (Central Processing Unit).
  • the controller 59a stores at least a computer program for controlling the operations of the first and second heaters 55a, 55b, 52a, 52b, 52c, 52d, 52e, and 52f of the film forming head 202 via the bus.
  • the first temperature detection unit 59f detects the temperature around the first heaters 55a and 55b, for example, the temperature of the first half 54a of the heating device 54, and gives the detected temperature to the control unit 59a.
  • the second temperature detector 59g detects the temperature around the second heaters 52a, 52b, 52c, 52d, 52e, and 52f, for example, the temperature of the inorganic film forming material casing 51, and the detected temperature is controlled by the controller 59a. To give.
  • the first and second heaters 55a, 55b, 52a, 52b, 52c, 52d, 52e, and 52f are connected to the bus via a power supply circuit connected to the I / O port. I / O ports and power supply circuits are not shown.
  • the controller 59a controls the first and second heaters 55a and 55g so that the temperature of the inorganic film forming material supplier 5 reaches a specific target temperature.
  • the power supply to 55b, 52a, 52b, 52c, 52d, 52e, and 52f is controlled.
  • the first and second heaters 55a, 55b, 52a, 52b, 52c, 52d, 52e, and 52f are each represented by one block.
  • FIG. 18 is a flowchart showing a processing procedure of control related to power supply to the first and second heaters 55a, 55b, 52a, 52b, 52c, 52d, 52e, and 52f.
  • FIG. 19 shows the first and second heaters 55a, 55a, 55 is a timing chart showing power supply to 55b, 52a, 52b, 52c, 52d, 52e, and 52f and a temperature change of the container 57.
  • the control unit 59a turns on the first and second heaters 55a, 55b, 52a, 52b, 52c, 52d, 52e, and 52f (step S11).
  • control unit 59a starts power feeding to the first and second heaters 55a, 55b, 52a, 52b, 52c, 52d, 52e, and 52f by giving a control signal to the power supply circuit. Then, the control unit 59a uses the first and second temperature detection units 59f and 59g to change the ambient temperature T1 of the first heaters 55a and 55b to the vicinity of the second heaters 52a, 52b, 52c, 52d, 52e, and 52f. It is determined whether or not the temperature is equal to or lower than T2 (step S12).
  • step S12 NO
  • the control unit 59a The output of 1 heater 55a, 55b is reduced, or the output of 2nd heater 52a, 52b, 52c, 52d, 52e, 52f is increased (step S13).
  • the processing in steps S12 and S13 is processing for preventing the vapor of the inorganic film forming material from condensing and adhering on the inner wall of the inorganic film forming material casing 51.
  • Step S12 the ambient temperature T1 of the first heaters 55a and 55b is equal to or lower than the ambient temperature T2 of the second heaters 52a, 52b, 52c, 52d, 52e, and 52f (step S12: YES), or the process of step S13 is performed.
  • the control unit 59a determines whether or not the ambient temperature T1 of the first heaters 55a and 55b is equal to or higher than the first temperature using the first temperature detection unit 59f (step S14).
  • the first temperature is a temperature lower than a specific target temperature. For example, when the target temperature is 500 degrees, the first temperature is set to 400 degrees to 450 degrees.
  • the first temperature may be a predetermined temperature specified by an experiment, or may be a temperature calculated based on an input target temperature.
  • the control part 59a performs the process of step S14 again.
  • the control unit 59a turns off the first heaters 55a and 55b as shown in FIG. (Step S15). Specifically, the control unit 59a stops power supply to the first heaters 55a and 55b by giving a control signal to the power supply circuit. Next, the control unit 59a determines whether or not the ambient temperature T2 of the second heaters 52a, 52b, 52c, 52d, 52e, and 52f is equal to or higher than the second temperature using the second temperature detection unit 59g ( Step S16).
  • the second temperature is higher than a specific target temperature, and when the ambient temperature T2 of the second heaters 52a, 52b, 52c, 52d, 52e, 52f reaches the second temperature, the second heaters 52a, 52b, 52c. , 52d, 52e, and 52f, the temperature of the container 57 and the inorganic film-forming material is just set to the target by the heat radiated from the periphery of the second heaters 52a, 52b, 52c, 52d, 52e, and 52f. It is a temperature that reaches the temperature.
  • the second temperature may be a predetermined temperature determined by experiment or the like, or may be a temperature calculated based on the input target temperature.
  • step S16 when the target temperature is 500 degrees, 520 degrees is set as the second temperature.
  • the control unit 59a performs the process of step S16 again. To do.
  • the control unit 59a when it is determined that the ambient temperature T2 of the second heaters 52a, 52b, 52c, 52d, 52e, 52f is equal to or higher than the second temperature (step S16: YES), the control unit 59a, as shown in FIG.
  • the control unit 59a monitors the temperatures detected by the first and second temperature detection units 59f and 59g, and gives a control signal to the power supply circuit so that each temperature matches the target temperature.
  • the power supply to the second heaters 52a, 52b, 52c, 52d, 52e, and 52f is controlled. More specifically, the control unit 59a temporarily stops heating by the second heaters 52a, 52b, 52c, 52d, 52e, and 52f or lowers the output, and the second temperature is lower than the target temperature.
  • the ambient temperature T2 is maintained at the target temperature by repeating the above-described processing. Even when the heating of the inorganic film forming material is stopped, the condition that the ambient temperature T1 of the first heaters 55a and 55b is equal to or lower than the ambient temperature T2 of the second heaters 52a, 52b, 52c, 52d, 52e, and 52f is maintained. The temperature of the container 57 and the inorganic film-forming material may be lowered while remaining. This is to prevent the vapor of the inorganic film forming material from condensing and adhering on the inner wall of the inorganic film forming material casing 51. Therefore, it is not necessary to maintain the above condition when the temperature is lower than a predetermined temperature at which the vapor of the inorganic film forming material is not generated.
  • the container 57 having the longitudinal direction can be uniformly heated to the target temperature. That is, the temperature uniformity in the longitudinal direction of the container 57 can be improved.
  • the process for maintaining the temperature of the container 57 at the target temperature is not particularly limited.
  • power may be intermittently supplied to the second heaters 52a, 52b, 52c, 52d, 52e, and 52f, or the temperature detected by the second temperature detection unit 59g is determined by the target temperature or the target temperature.
  • the power may be supplied to the second heaters 52a, 52b, 52c, 52d, 52e, and 52f for a certain period of time.
  • you may control the temperature of the container 57 by changing the electric power feeding amount to 2nd heater 52a, 52b, 52c, 52d, 52e, 52f.
  • the organic film forming material supply unit 4 and the inorganic film forming material supply unit 5 supply the substrate G to be processed. It is possible to prevent the film formation conditions from being deteriorated by the radiant heat radiated to the surface. For example, it is possible to prevent the film pattern from being displaced due to thermal expansion of the pattern mask. Further, it is possible to suppress heat damage to the organic film to be formed.
  • the organic film forming material supply unit is heated by the heat radiated from the inorganic film forming material supply unit 5. Can be prevented from being abnormally heated and the organic film forming material burned out.
  • the organic film forming material supply unit 4 is at a lower temperature than the inorganic film forming material supply unit 5, and the organic film forming material supply unit 4 ejects the inorganic film forming material from the inorganic film forming material supply unit 5. Therefore, the inorganic film forming material sprayed from the inorganic film forming material supply unit 5 can be prevented from condensing and adhering to the organic film forming material supply unit 4. Since the inorganic film forming material supply unit 5 is at a high temperature, the organic film forming material injected from the organic film forming material supply unit 4 does not adhere to the inorganic film forming material supply unit 5.
  • the inorganic film forming material adheres to the organic film forming material supply unit 4 and may cause a contamination problem. According to the present embodiment, it is possible to prevent the organic film forming material and the inorganic film forming material from adhering to both the organic film forming material supply unit 4 and the inorganic film forming material supply unit 5.
  • the responsiveness of the temperature control is improved.
  • the temperature of the container 57 can be controlled with higher accuracy.
  • the temperature of the heating device 54 is heated to a first temperature lower than the target temperature, and then the inorganic film forming material casing 51 is heated to a second temperature higher than the target temperature, thereby uniformly surrounding the container 57.
  • the radiant heat can uniformly heat the container 57 to the target temperature and make the heat distribution in the longitudinal direction of the container 57 uniform.
  • the inorganic film forming material casing 51 and the heating The device 54 can be cooled uniformly. That is, temperature uniformity in the longitudinal direction of the inorganic film forming material casing 51, the heating device 54, and the container 57 can be improved.
  • FIG. 20 is a sectional side view of the film forming head 302 according to the third modification.
  • the heat shield plates 371 and 372 according to the modification 3 respectively have heat shield plate heat medium passages 371a and 372a for air cooling.
  • the heat shield plate heat medium passages 371a and 372a have the heat shield plates 371 and 372 formed therein, so that the organic film forming material is supplied. It is possible to more effectively prevent the film forming conditions from being deteriorated by the radiant heat radiated from the unit 4 and the inorganic film forming material supply unit 5 to the substrate G to be processed.

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Abstract

Cette invention concerne un dispositif de formation de film qui permet la codéposition d'un matériau filmogène organique et d'un matériau filmogène inorganique dans les conditions requises. Le dispositif de formation de film comprend une chambre de traitement qui accueille un substrat (G) à traiter ; une unité de génération de vapeur qui est disposée à l'extérieur de la chambre de traitement et qui génère la vapeur du matériau filmogène organique ; une unité de distribution de matériau filmogène organique (22) qui est disposée à l'intérieur de la chambre de traitement et qui émet la vapeur de matériau filmogène organique générée par l'unité de génération de vapeur ; une unité de distribution de matériau filmogène inorganique (24) qui est disposée à l'intérieur de la chambre de traitement et qui émet de la vapeur de matériau filmogène inorganique ; et une chambre de mélange (23) qui mélange la vapeur de matériau filmogène organique émise par l'unité de distribution de matériau filmogène organique (22) et la vapeur de matériau filmogène inorganique émise par l'unité de distribution de matériau filmogène inorganique (24). La chambre de mélange (23) ménage au dispositif de formation de film une sortie (23c) à travers laquelle passe le mélange de vapeur du matériau filmogène organique et du matériau filmogène inorganique, pour diffuser sur le substrat (G) à traiter la vapeur mélangée.
PCT/JP2010/067136 2009-10-05 2010-09-30 Dispositif de formation de film, tête de formation de film et procédé de formation de film WO2011043244A1 (fr)

Priority Applications (2)

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CN201080044833.8A CN102575347B (zh) 2009-10-05 2010-09-30 成膜装置、成膜头和成膜方法
JP2011535361A JP5484478B2 (ja) 2009-10-05 2010-09-30 成膜装置及び成膜ヘッド

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JP2009231835 2009-10-05

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002348659A (ja) * 2001-05-23 2002-12-04 Junji Kido 連続蒸着装置、蒸着装置及び蒸着方法
JP2003059922A (ja) * 2001-08-08 2003-02-28 National Institute Of Advanced Industrial & Technology 絶縁膜生成方法およびその装置
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