JP2008088489A - 蒸着装置 - Google Patents
蒸着装置 Download PDFInfo
- Publication number
- JP2008088489A JP2008088489A JP2006269085A JP2006269085A JP2008088489A JP 2008088489 A JP2008088489 A JP 2008088489A JP 2006269085 A JP2006269085 A JP 2006269085A JP 2006269085 A JP2006269085 A JP 2006269085A JP 2008088489 A JP2008088489 A JP 2008088489A
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- vapor deposition
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- 238000007740 vapor deposition Methods 0.000 title claims abstract description 105
- 239000000463 material Substances 0.000 claims abstract description 76
- 238000012545 processing Methods 0.000 claims abstract description 64
- 238000001704 evaporation Methods 0.000 claims abstract description 7
- 230000007246 mechanism Effects 0.000 claims abstract description 7
- 239000012159 carrier gas Substances 0.000 claims description 27
- 238000005192 partition Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 3
- 238000000638 solvent extraction Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 63
- 239000000758 substrate Substances 0.000 description 57
- 238000012546 transfer Methods 0.000 description 27
- 238000005401 electroluminescence Methods 0.000 description 25
- 238000000151 deposition Methods 0.000 description 13
- 239000011521 glass Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K1/00—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K41/00—Spindle sealings
- F16K41/10—Spindle sealings with diaphragm, e.g. shaped as bellows or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【解決手段】蒸着により被処理体Gを成膜処理する蒸着装置13であって、被処理体Gを成膜処理する処理室30と、成膜材料を蒸発させる蒸気発生室31とを隣接させて配置し、処理室30の内部と蒸気発生室31の内部を減圧させる排気機構36,41を設け、処理室30に、成膜材料の蒸気を噴出させる蒸気噴出口80を配置し、蒸気発生室31に、成膜材料を蒸発させる蒸気発生部70〜72と、成膜材料の蒸気の供給を制御する制御弁75〜77とを配置し、蒸気発生部31で発生させた成膜材料の蒸気を、処理室30と蒸気発生室31の外部に出さずに、蒸気噴出口80に供給させる流路81〜83、85を設けた。
【選択図】図3
Description
G ガラス基板
10 処理システム
11 ローダ11
12、14、16、18、20、22 トランスファーチャンバ
13 発光層の蒸着装置
15 仕事関数調整層の成膜装置
17 エッチング装置
19 スパッタリング装置
21 CVD装置
23 アンローダ
30 処理室
31 蒸気発生室
32 容器本体
33 隔壁
35、40 排気孔
36、41 真空ポンプ
45 ガイド部材
47 基板保持部
55〜60 蒸着ユニット
65 蒸着ヘッド
66 配管ケース
70〜72 蒸気発生部
75〜77 制御弁
80 蒸気噴出口
81〜83 枝配管
85 合流配管
90 ヒータ
91 ヒータブロック
92 材料容器
93 キャリアガス供給配管
94 キャリアガス経路
Claims (8)
- 蒸着により被処理体を成膜処理する蒸着装置であって、
被処理体を成膜処理する処理室と、成膜材料を蒸発させる蒸気発生室とを隣接させて配置し、
前記処理室の内部と前記蒸気発生室の内部を減圧させる排気機構を設け、
前記処理室に、成膜材料の蒸気を噴出させる蒸気噴出口を配置し、
前記蒸気発生室に、成膜材料を蒸発させる蒸気発生部と、成膜材料の蒸気の供給を制御する制御弁とを配置し、
前記蒸気発生部で発生させた成膜材料の蒸気を、前記処理室と前記蒸気発生室の外部に出さずに、前記蒸気噴出口に供給させる流路を設けたことを特徴とする、蒸着装置。 - 前記蒸気噴出口が任意の面に形成された蒸着ヘッドを有し、前記蒸着ヘッドの前記蒸気噴出口が形成された面を前記処理室内に露出させた姿勢で、前記蒸着ヘッドを、前記処理室と前記蒸気発生室とを仕切る隔壁に支持したことを特徴とする、請求項1に記載の蒸着装置。
- 前記隔壁の少なくとも一部を断熱材としたことを特徴とする、請求項2に記載の蒸着装置。
- 前記蒸気発生部と前記制御弁を、前記蒸着ヘッドに支持させたことを特徴とする、請求項2または3に記載の蒸着装置。
- 前記蒸気発生部で蒸発させた成膜材料の蒸気を前記蒸気噴出口に供給させるためのキャリアガスを、前記蒸気発生機構に供給するキャリアガス供給配管を有することを特徴とする、請求項1〜4のいずれかに記載の蒸着装置。
- 前記蒸気発生部は、全体を一体的に加熱可能なヒータブロックを有し、前記ヒータブロックの内部に、成膜材料を充填可能な材料容器と、前記キャリアガス供給配管から供給されたキャリアガスを前記材料容器に通すキャリアガス経路を配置したことを特徴とする、請求項5に記載の蒸着装置。
- 前記成膜材料は、有機EL素子の発光層の成膜材料であることを特徴とする、請求項1〜6のいずれかに記載の蒸着装置。
- 前記制御弁は、ベローズ弁またはダイアフラム弁であることを特徴とする、請求項1〜7のいずれかに記載の蒸着装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006269085A JP5173175B2 (ja) | 2006-09-29 | 2006-09-29 | 蒸着装置 |
TW096136640A TW200835796A (en) | 2006-09-29 | 2007-09-29 | Vapor-deposition apparatus |
US12/441,934 US20100071623A1 (en) | 2006-09-29 | 2007-10-01 | Evaporating apparatus |
DE112007002217T DE112007002217T5 (de) | 2006-09-29 | 2007-10-01 | Bedampfungsvorrichtung |
PCT/JP2007/069187 WO2008041671A1 (fr) | 2006-09-29 | 2007-10-01 | Appareil de dépôt par évaporation |
KR1020097005687A KR101075130B1 (ko) | 2006-09-29 | 2007-10-01 | 증착 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006269085A JP5173175B2 (ja) | 2006-09-29 | 2006-09-29 | 蒸着装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011236147A Division JP5511767B2 (ja) | 2011-10-27 | 2011-10-27 | 蒸着装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008088489A true JP2008088489A (ja) | 2008-04-17 |
JP2008088489A5 JP2008088489A5 (ja) | 2011-12-08 |
JP5173175B2 JP5173175B2 (ja) | 2013-03-27 |
Family
ID=39268526
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006269085A Expired - Fee Related JP5173175B2 (ja) | 2006-09-29 | 2006-09-29 | 蒸着装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20100071623A1 (ja) |
JP (1) | JP5173175B2 (ja) |
KR (1) | KR101075130B1 (ja) |
DE (1) | DE112007002217T5 (ja) |
TW (1) | TW200835796A (ja) |
WO (1) | WO2008041671A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010031324A (ja) * | 2008-07-29 | 2010-02-12 | Tokyo Electron Ltd | 蒸着源ユニット、蒸着方法、蒸着源ユニットの制御装置および成膜装置 |
WO2010038631A1 (ja) * | 2008-09-30 | 2010-04-08 | 東京エレクトロン株式会社 | 蒸着装置、蒸着方法およびプログラムを記憶した記憶媒体 |
JP2011105962A (ja) * | 2009-11-12 | 2011-06-02 | Hitachi High-Technologies Corp | 真空蒸着装置、真空蒸着方法、および、有機el表示装置の製造方法 |
JP2011179073A (ja) * | 2010-03-01 | 2011-09-15 | Ulvac Japan Ltd | 薄膜形成装置 |
JP2012504187A (ja) * | 2008-09-29 | 2012-02-16 | アプライド マテリアルズ インコーポレイテッド | 有機材料用の蒸発器および有機材料を蒸発させるための方法 |
JP2020020035A (ja) * | 2018-07-30 | 2020-02-06 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 表示装置の製造装置、及び表示装置の製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5020650B2 (ja) * | 2007-02-01 | 2012-09-05 | 東京エレクトロン株式会社 | 蒸着装置、蒸着方法および蒸着装置の製造方法 |
DE102010041376A1 (de) | 2009-09-25 | 2011-04-07 | Von Ardenne Anlagentechnik Gmbh | Verdampfereinrichtung für eine Beschichtungsanlage und Verfahren zur Koverdampfung von mindestens zwei Substanzen |
JP2014095131A (ja) * | 2012-11-09 | 2014-05-22 | Tokyo Electron Ltd | 成膜装置 |
US20160281212A1 (en) | 2015-03-24 | 2016-09-29 | Siva Power, Inc. | Thermal management of evaporation sources |
US10593967B2 (en) * | 2016-06-30 | 2020-03-17 | Honeywell International Inc. | Modulated thermal conductance thermal enclosure |
Citations (6)
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JPS6278188A (ja) * | 1985-08-01 | 1987-04-10 | アメリカン・サイアナミド・カンパニ− | バブラ−シリンダ装置 |
JP2004059992A (ja) * | 2002-07-29 | 2004-02-26 | Sony Corp | 有機薄膜形成装置 |
JP2005036296A (ja) * | 2003-07-17 | 2005-02-10 | Fuji Electric Holdings Co Ltd | 有機薄膜の製造方法および製造装置 |
JP2005203248A (ja) * | 2004-01-16 | 2005-07-28 | Sony Corp | 蒸着方法及び蒸着装置 |
JP2006104497A (ja) * | 2004-10-01 | 2006-04-20 | Hitachi Zosen Corp | 蒸着装置 |
JP2006249541A (ja) * | 2005-03-14 | 2006-09-21 | Hitachi Zosen Corp | 蒸着装置 |
Family Cites Families (4)
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JP3734239B2 (ja) | 1999-04-02 | 2006-01-11 | キヤノン株式会社 | 有機膜真空蒸着用マスク再生方法及び装置 |
JP2002322556A (ja) | 2001-02-21 | 2002-11-08 | Semiconductor Energy Lab Co Ltd | 成膜方法及び成膜装置 |
JP3705237B2 (ja) * | 2001-09-05 | 2005-10-12 | ソニー株式会社 | 有機電界発光素子を用いた表示装置の製造システムおよび製造方法 |
US7364772B2 (en) | 2004-03-22 | 2008-04-29 | Eastman Kodak Company | Method for coating an organic layer onto a substrate in a vacuum chamber |
-
2006
- 2006-09-29 JP JP2006269085A patent/JP5173175B2/ja not_active Expired - Fee Related
-
2007
- 2007-09-29 TW TW096136640A patent/TW200835796A/zh unknown
- 2007-10-01 US US12/441,934 patent/US20100071623A1/en not_active Abandoned
- 2007-10-01 WO PCT/JP2007/069187 patent/WO2008041671A1/ja active Search and Examination
- 2007-10-01 DE DE112007002217T patent/DE112007002217T5/de not_active Withdrawn
- 2007-10-01 KR KR1020097005687A patent/KR101075130B1/ko not_active IP Right Cessation
Patent Citations (6)
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JPS6278188A (ja) * | 1985-08-01 | 1987-04-10 | アメリカン・サイアナミド・カンパニ− | バブラ−シリンダ装置 |
JP2004059992A (ja) * | 2002-07-29 | 2004-02-26 | Sony Corp | 有機薄膜形成装置 |
JP2005036296A (ja) * | 2003-07-17 | 2005-02-10 | Fuji Electric Holdings Co Ltd | 有機薄膜の製造方法および製造装置 |
JP2005203248A (ja) * | 2004-01-16 | 2005-07-28 | Sony Corp | 蒸着方法及び蒸着装置 |
JP2006104497A (ja) * | 2004-10-01 | 2006-04-20 | Hitachi Zosen Corp | 蒸着装置 |
JP2006249541A (ja) * | 2005-03-14 | 2006-09-21 | Hitachi Zosen Corp | 蒸着装置 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010031324A (ja) * | 2008-07-29 | 2010-02-12 | Tokyo Electron Ltd | 蒸着源ユニット、蒸着方法、蒸着源ユニットの制御装置および成膜装置 |
JP2012504187A (ja) * | 2008-09-29 | 2012-02-16 | アプライド マテリアルズ インコーポレイテッド | 有機材料用の蒸発器および有機材料を蒸発させるための方法 |
WO2010038631A1 (ja) * | 2008-09-30 | 2010-04-08 | 東京エレクトロン株式会社 | 蒸着装置、蒸着方法およびプログラムを記憶した記憶媒体 |
CN102171377A (zh) * | 2008-09-30 | 2011-08-31 | 东京毅力科创株式会社 | 蒸镀装置、蒸镀方法以及存储有程序的存储介质 |
KR101226518B1 (ko) | 2008-09-30 | 2013-01-25 | 도쿄엘렉트론가부시키가이샤 | 증착 장치, 증착 방법 및 프로그램을 기억한 기억 매체 |
JP5340299B2 (ja) * | 2008-09-30 | 2013-11-13 | 東京エレクトロン株式会社 | 蒸着装置、蒸着方法およびプログラムを記憶した記憶媒体 |
JP2011105962A (ja) * | 2009-11-12 | 2011-06-02 | Hitachi High-Technologies Corp | 真空蒸着装置、真空蒸着方法、および、有機el表示装置の製造方法 |
JP2011179073A (ja) * | 2010-03-01 | 2011-09-15 | Ulvac Japan Ltd | 薄膜形成装置 |
JP2020020035A (ja) * | 2018-07-30 | 2020-02-06 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 表示装置の製造装置、及び表示装置の製造方法 |
JP7240925B2 (ja) | 2018-07-30 | 2023-03-16 | 三星ディスプレイ株式會社 | 表示装置の製造装置、及び表示装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101075130B1 (ko) | 2011-10-19 |
DE112007002217T5 (de) | 2009-09-10 |
TW200835796A (en) | 2008-09-01 |
WO2008041671A1 (fr) | 2008-04-10 |
KR20090045356A (ko) | 2009-05-07 |
US20100071623A1 (en) | 2010-03-25 |
JP5173175B2 (ja) | 2013-03-27 |
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