JP2008038225A - 成膜装置、成膜システムおよび成膜方法 - Google Patents
成膜装置、成膜システムおよび成膜方法 Download PDFInfo
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- 238000000151 deposition Methods 0.000 title claims abstract description 25
- 230000008021 deposition Effects 0.000 title abstract description 17
- 230000007246 mechanism Effects 0.000 claims abstract description 121
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 238000012545 processing Methods 0.000 claims abstract description 74
- 239000000463 material Substances 0.000 claims abstract description 44
- 238000007740 vapor deposition Methods 0.000 claims description 76
- 238000004544 sputter deposition Methods 0.000 claims description 49
- 230000032258 transport Effects 0.000 claims description 21
- 238000012546 transfer Methods 0.000 claims description 17
- 230000007723 transport mechanism Effects 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 239000012159 carrier gas Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000012864 cross contamination Methods 0.000 abstract description 2
- 238000005401 electroluminescence Methods 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 16
- 239000007789 gas Substances 0.000 description 13
- 229910052783 alkali metal Inorganic materials 0.000 description 10
- 150000001340 alkali metals Chemical class 0.000 description 10
- 238000011109 contamination Methods 0.000 description 9
- 238000001704 evaporation Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- 229910000861 Mg alloy Inorganic materials 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 101000574352 Mus musculus Protein phosphatase 1 regulatory subunit 17 Proteins 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- -1 naphthalene-1-yl Chemical group 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/441—Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- General Chemical & Material Sciences (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【解決手段】基板Gに成膜する成膜装置13であって、処理容器30の内部において、第1の層を成膜させる第1成膜機構35と、第2の層を成膜させる第2成膜機構36を備え、第1成膜機構35は、処理容器30の内部に配置された、成膜材料の蒸気を基板に供給するノズル34と、処理容器の外部に配置された、成膜材料の蒸気を発生させる蒸気発生部45と、蒸気発生部45で発生させた成膜材料の蒸気をノズル34に送る配管46と、を備える。
【選択図】図3
Description
(N,N-di(naphthalene-1-yl)-N,N-diphenyl-benzidene)からなる図示しない正孔輸送層(HTL;Hole
Transfer Layer)をアノード層1の上に蒸着成膜し、更にその上に、発光層2を成膜した多層構造などに構成される。
G 基板
M マスク
1 アノード層
2 発光層(第3の層)
3 仕事関数調整層(第1の層)
4 カソード層(第2の層)
10 成膜システム
11 搬送装置
12 基板ロードロック装置12
13 スパッタリング蒸着成膜装置
14 アライメント装置
15 成形装置
16 マスクロードロック装置
17 CVD装置
18 基板反転装置
19 蒸着成膜装置
20 搬送機構
30 処理容器
31 排気管
32 真空ポンプ
34 ノズル
35 蒸着成膜機構(第1成膜機構)
36 スパッタリング成膜機構(第2成膜機構)
40 搬送機構
45 蒸気発生部
46 配管
50 容器
51 加熱機構
53 輸送ガス供給管
56 排気管
57 真空ポンプ
58 開閉弁
60 ターゲット
85 蒸着成膜機構(第3成膜機構)
Claims (15)
- 基板に成膜する成膜装置であって、
処理容器の内部において、第1の層を成膜させる第1成膜機構と、第2の層を成膜させる第2成膜機構を備え、
前記第1成膜機構は、前記処理容器の内部に配置された、成膜材料の蒸気を基板に供給するノズルと、前記処理容器の外部に配置された、成膜材料の蒸気を発生させる蒸気発生部と、前記蒸気発生部で発生させた成膜材料の蒸気を前記ノズルに送る配管と、を備えることを特徴とする、成膜装置。 - 前記蒸気発生部は、前記処理容器の外部に配置された容器と、前記容器の内部において成膜材料源を加熱する加熱機構を備えることを特徴とする、請求項1に記載の成膜装置。
- 成膜材料の蒸気をキャリアガスを用いて蒸気発生部内からノズルに送ることを特徴とする、請求項2に記載の成膜装置。
- 前記容器が開閉自在であることを特徴とする、請求項2または3に記載の成膜装置。
- 更に、前記処理容器内を減圧させる真空ポンプと、前記容器内を減圧させる真空ポンプと、前記配管を開閉させる開閉機構と、を備えることを特徴とする、請求項2〜4のいずれかに記載の成膜装置。
- 前記容器の容積が、前記処理容器の容積よりも小さいことを特徴とする、請求項5に記載の成膜装置。
- 前記処理容器内において、前記第1成膜機構および前記第2成膜機構の各処理位置に基板を搬送する搬送機構を備えることを特徴とする、請求項1〜6のいずれかに記載の成膜装置。
- 前記第2成膜機構は、スパッタリングによって第2の層を成膜させるものであることを特徴とする、請求項1〜7のいずれかに記載の成膜装置。
- 基板に成膜する成膜システムであって、請求項1〜8のいずれかに記載の成膜装置と、第3の層を成膜させる第3成膜機構を処理容器の内部に備える別の成膜装置と、を備えることを特徴とする、成膜システム。
- 請求項1〜8のいずれかに記載の前記成膜装置と前記別の成膜装置との間で基板を搬送する搬送装置を備えることを特徴とする、請求項9に記載の成膜システム。
- 前記第3成膜機構は、基板表面に第3の層を蒸着によって成膜させるものであることを特徴とする、請求項9または10に記載の成膜システム。
- 基板に成膜する成膜方法であって、
処理容器の外部で発生させた成膜材料の蒸気を、前記処理容器の内部に配置したノズルから基板に供給して基板に蒸着させることにより第1の層を成膜させた後、前記処理容器の内部において、第2の層を成膜させることを特徴とする、成膜方法。 - 前記第2の層をスパッタリングによって成膜させることを特徴とする、請求項12に記載の成膜方法。
- 予め、別の処理容器の内部において、第3の層を成膜させることを特徴とする、請求項12または13に記載の成膜方法。
- 前記第3の層を蒸着によって成膜させることを特徴とする、請求項14に記載の成膜方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006216802A JP5203584B2 (ja) | 2006-08-09 | 2006-08-09 | 成膜装置、成膜システムおよび成膜方法 |
PCT/JP2007/065512 WO2008018498A1 (fr) | 2006-08-09 | 2007-08-08 | Dispositif de formation de film, système de formation de film et procédé de formation de film |
CNA200780029415XA CN101501238A (zh) | 2006-08-09 | 2007-08-08 | 成膜装置、成膜系统及成膜方法 |
DE112007001872T DE112007001872T5 (de) | 2006-08-09 | 2007-08-08 | Abscheidungsvorrichtung, Abscheidungssystem und Abscheidungsverfahren |
KR1020097002796A KR101046239B1 (ko) | 2006-08-09 | 2007-08-08 | 성막 장치, 성막 시스템 및 성막 방법 |
US12/376,635 US20100175989A1 (en) | 2006-08-09 | 2007-08-08 | Deposition apparatus, deposition system and deposition method |
TW096129434A TW200818267A (en) | 2006-08-09 | 2007-08-09 | Film forming apparatus, film forming system and film forming method |
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JP2006216802A JP5203584B2 (ja) | 2006-08-09 | 2006-08-09 | 成膜装置、成膜システムおよび成膜方法 |
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JP2008038225A true JP2008038225A (ja) | 2008-02-21 |
JP5203584B2 JP5203584B2 (ja) | 2013-06-05 |
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Country Status (7)
Country | Link |
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US (1) | US20100175989A1 (ja) |
JP (1) | JP5203584B2 (ja) |
KR (1) | KR101046239B1 (ja) |
CN (1) | CN101501238A (ja) |
DE (1) | DE112007001872T5 (ja) |
TW (1) | TW200818267A (ja) |
WO (1) | WO2008018498A1 (ja) |
Cited By (4)
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WO2011043244A1 (ja) * | 2009-10-05 | 2011-04-14 | 東京エレクトロン株式会社 | 成膜装置、成膜ヘッド及び成膜方法 |
KR101055606B1 (ko) | 2008-10-22 | 2011-08-10 | 한국과학기술원 | 유기 드라이 젯 프린팅 헤드 및 이를 이용한 프린팅 장치 및 방법 |
JP2012507634A (ja) * | 2008-11-06 | 2012-03-29 | ライボルト オプティクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | テストガラス変動システム |
WO2012046672A1 (ja) * | 2010-10-04 | 2012-04-12 | 東京エレクトロン株式会社 | 成膜装置及び成膜材料供給方法 |
Families Citing this family (3)
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TW201408133A (zh) * | 2008-09-04 | 2014-02-16 | Hitachi High Tech Corp | 有機電激發光裝置製造裝置及其製造方法以及成膜裝置及成膜方法 |
TW201250024A (en) * | 2011-03-03 | 2012-12-16 | Tokyo Electron Ltd | Vapor-deposition device, vapor-deposition method |
CN102703871B (zh) * | 2012-05-18 | 2013-12-11 | 常熟晶玻光学科技有限公司 | 触控面板镀膜工艺 |
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- 2007-08-08 KR KR1020097002796A patent/KR101046239B1/ko not_active IP Right Cessation
- 2007-08-08 CN CNA200780029415XA patent/CN101501238A/zh active Pending
- 2007-08-08 US US12/376,635 patent/US20100175989A1/en not_active Abandoned
- 2007-08-08 DE DE112007001872T patent/DE112007001872T5/de not_active Withdrawn
- 2007-08-08 WO PCT/JP2007/065512 patent/WO2008018498A1/ja active Search and Examination
- 2007-08-09 TW TW096129434A patent/TW200818267A/zh unknown
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Cited By (7)
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KR101055606B1 (ko) | 2008-10-22 | 2011-08-10 | 한국과학기술원 | 유기 드라이 젯 프린팅 헤드 및 이를 이용한 프린팅 장치 및 방법 |
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WO2012046672A1 (ja) * | 2010-10-04 | 2012-04-12 | 東京エレクトロン株式会社 | 成膜装置及び成膜材料供給方法 |
JP5301736B2 (ja) * | 2010-10-04 | 2013-09-25 | 東京エレクトロン株式会社 | 成膜装置及び成膜材料供給方法 |
KR101321808B1 (ko) | 2010-10-04 | 2013-10-28 | 도쿄엘렉트론가부시키가이샤 | 성막 장치 및 성막 재료 공급 방법 |
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JP5203584B2 (ja) | 2013-06-05 |
TW200818267A (en) | 2008-04-16 |
US20100175989A1 (en) | 2010-07-15 |
CN101501238A (zh) | 2009-08-05 |
KR101046239B1 (ko) | 2011-07-04 |
DE112007001872T5 (de) | 2009-05-28 |
WO2008018498A1 (fr) | 2008-02-14 |
KR20090031615A (ko) | 2009-03-26 |
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