WO2013122059A1 - Appareil de formation de film - Google Patents

Appareil de formation de film Download PDF

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Publication number
WO2013122059A1
WO2013122059A1 PCT/JP2013/053287 JP2013053287W WO2013122059A1 WO 2013122059 A1 WO2013122059 A1 WO 2013122059A1 JP 2013053287 W JP2013053287 W JP 2013053287W WO 2013122059 A1 WO2013122059 A1 WO 2013122059A1
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WO
WIPO (PCT)
Prior art keywords
vapor deposition
soaking block
forming apparatus
film forming
vapor
Prior art date
Application number
PCT/JP2013/053287
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English (en)
Japanese (ja)
Inventor
森田　治
Original Assignee
東京エレクトロン株式会社
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Publication of WO2013122059A1 publication Critical patent/WO2013122059A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material

Definitions

  • Various aspects and embodiments of the present invention relate to a film forming apparatus.
  • organic EL displays using organic electroluminescence (EL) elements that emit light using organic compounds.
  • An organic EL element used for an organic EL display has features such as self-emission, fast reaction speed, and low power consumption, and thus does not require a backlight.
  • a display unit of a portable device, etc. Application to is expected.
  • the organic EL element is formed on a glass substrate and has a structure in which an organic layer is sandwiched between an anode (anode) and a cathode (cathode).
  • anode anode
  • cathode cathode
  • a voltage is applied to the anode and cathode of the organic EL element, holes (holes) are injected into the organic layer from the anode, and electrons are injected into the organic layer from the cathode.
  • the injected holes and electrons recombine in the organic layer, and light emission occurs at this time.
  • a film forming apparatus for forming an organic EL element on a glass substrate heats and evaporates a vapor deposition material such as an organic material accommodated in a material container, and vapors of the generated vapor deposition material together with a transport gas are transported along a transport path.
  • the vapor deposition material film forming apparatus deposits the vapor deposition material on the glass substrate by spraying a gas containing vapor of the vapor deposition material from the vapor deposition head (hereinafter, referred to as “vapor deposition material gas” as appropriate) and adhering it to the glass substrate. The material is deposited.
  • Patent Document 1 discloses a film forming apparatus that includes a plurality of raw material containers that contain organic materials and that selectively supplies the plurality of raw material containers to an organic EL molecule supply state. This film forming apparatus is disclosed that a heater is provided in each raw material container, and an organic material is evaporated by heating the heater.
  • the conventional film forming apparatus performs evaporation / temperature control of the vapor deposition material by controlling the vapor deposition material container with a heater, but the film formation apparatus such as the container, the transport path, the vapor deposition head, etc. No consideration is given to improving the thermal uniformity of the vapor deposition material gas between these parts.
  • a film forming apparatus is transported via a material container in which a deposition material is accommodated, a transportation path for transporting a gas containing vapor of the deposition material evaporated in the material container, and the transportation path.
  • a vapor deposition head for injecting a gas containing vapor of the vapor deposition material.
  • the film forming apparatus includes a heating element that heats the material container, the transport path, and the vapor deposition head. The material container, the transport path, the vapor deposition head, and the heating element are accommodated in a vacuum container.
  • a film forming apparatus capable of improving the thermal uniformity of the vapor deposition material gas between the components of the film forming apparatus is realized.
  • FIG. 1 is a diagram schematically illustrating a film forming apparatus according to an embodiment.
  • FIG. 2 is a perspective view showing a vapor deposition head according to an embodiment.
  • FIG. 3 is a diagram illustrating an example of a completed state of an organic EL element that can be manufactured using the film forming apparatus according to the embodiment.
  • FIG. 4 is a diagram schematically illustrating a gas supply source according to an embodiment.
  • FIG. 5 is a cross-sectional view of a high temperature heat resistant valve according to an embodiment.
  • FIG. 6 is a block diagram illustrating a control unit according to an embodiment.
  • FIG. 7 is a diagram illustrating a flow of processing performed by the MFC control unit and the valve control unit according to an embodiment.
  • FIG. 1 is a diagram schematically illustrating a film forming apparatus according to an embodiment.
  • FIG. 2 is a perspective view showing a vapor deposition head according to an embodiment.
  • FIG. 3 is a diagram illustrating an example of a completed state of an
  • FIG. 8 is a diagram illustrating a state of the first to third steam generation units according to the embodiment.
  • FIG. 9 is a diagram schematically illustrating a gas supply source that generates a vapor of a dopant material and a vapor of a host material according to an embodiment.
  • FIG. 10A is a diagram illustrating an outline of the overall configuration of the film forming apparatus according to the first embodiment.
  • FIG. 10-2 is a diagram showing an outline of the configuration of the transportation piping.
  • FIG. 10C is a diagram illustrating an outline of the configuration of the material container.
  • FIG. 10-4 is a diagram illustrating a modification of the material container.
  • FIG. 10-5 is a diagram illustrating a modification of the material container.
  • FIG. 10-6 is a diagram illustrating a modification of the material container.
  • FIG. 10A is a diagram illustrating an outline of the overall configuration of the film forming apparatus according to the first embodiment.
  • FIG. 10-2 is a diagram showing an outline of the configuration of the
  • FIG. 10-7 is a diagram showing an outline of the configuration of temperature measurement in the transport pipe.
  • FIG. 10-8 is a diagram showing an outline of the configuration of the vapor deposition head.
  • FIG. 10-9 is a diagram showing an outline of the configuration of the vapor deposition head.
  • FIG. 10-10 is a diagram showing an outline of the configuration of the Post-Mix deposition head.
  • FIG. 1 is a diagram schematically showing a film forming apparatus according to an embodiment.
  • FIG. 1 shows an XYZ orthogonal coordinate system.
  • a film forming apparatus 10 shown in FIG. 1 includes a processing container 11 that defines a processing chamber 12 that houses a substrate S, and a stage 14 that holds the substrate S.
  • One surface (film formation surface) of the substrate S faces downward in the vertical direction (Z direction), for example. That is, the film forming apparatus 10 is a face-down type film forming apparatus.
  • the stage 14 may incorporate an electrostatic chuck that holds the substrate S.
  • the film forming apparatus may be a type in which a gas containing vapor of a deposition material is blown onto the film forming surface facing upward, that is, a face-up type film forming apparatus.
  • a vacuum pump 27 is connected to the processing container 11 via a tube 12g, and the inside of the processing chamber 12 can be decompressed by the vacuum pump 27.
  • the film forming apparatus 10 includes a vapor deposition head 16c having a nozzle 18c for spraying a gas G containing vapor of vapor deposition material onto the substrate S.
  • the film forming apparatus 10 may further include vapor deposition heads 16a, 16b, 16d, 16e, and 16f each having nozzles 18a, 18b, 18d, 18e, and 18f having the same structure as the nozzle 18c. From the nozzles 18a, 18b, 18d, 18e, and 18f, vapor deposition materials different from the vapor deposition material ejected from the nozzle 18c and different from each other may be ejected. Thereby, a plurality of types of films can be continuously deposited on the substrate S.
  • the vapor deposition heads 16a to 16f are connected to gas supply sources 20a to 20f for supplying a gas containing vapor of the vapor deposition material, respectively.
  • the gas G is supplied from the gas supply source 20c to the vapor deposition head 16c.
  • circular injection ports are formed at the tips of the nozzles 18a to 18f.
  • a gas containing a vapor deposition material is injected from the injection port.
  • Shutters 17a to 17f capable of blocking the vapor deposition material may be disposed at positions facing the nozzles 18a to 18f, respectively. In FIG. 1, since the shutter 17c is open, the gas G ejected from the ejection port of the nozzle 18c reaches the substrate S.
  • the shutters 17a, 17b, 17d, 17e, and 17f are closed, the gas ejected from the nozzles 18a, 18b, 18d, 18e, and 18f does not reach the substrate S.
  • the shutters 17a to 17f rotate around a rotation axis along the Y direction, for example.
  • the shutters 17a to 17f can be arranged on the ejection openings of the nozzles 18a to 18f and can be retracted from the ejection openings as necessary.
  • the film forming apparatus 10 includes a driving device 22 that drives the stage 14 in the X direction that intersects the Y direction.
  • the film forming apparatus 10 may further include a rail 24.
  • the rail 24 is attached to the inner wall of the processing container 11.
  • the stage 14 is connected to the rail 24 by, for example, a support portion 14a.
  • the stage 14 and the support portion 14 a are moved by the drive device 22 so as to slide on the rail 24.
  • the substrate S moves in the X direction relative to the nozzles 18a to 18f.
  • the substrates S are sequentially arranged in the openings of the nozzles 18a to 18f.
  • An arrow A in FIG. 1 indicates the moving direction of the stage 14.
  • the processing container 11 of the film forming apparatus 10 includes gate valves 26a and 26b.
  • the substrate S can be introduced into the processing chamber 12 through the gate valve 26 a formed in the processing container 11, and can be carried out of the processing chamber 12 through the gate valve 26 b formed in the processing container 11.
  • FIG. 2 is a perspective view showing a vapor deposition head according to an embodiment.
  • the vapor deposition head 16 c may have a plurality of injection ports 14 c in one embodiment. From the plurality of injection ports 14c, the gas supplied by the gas supply source 20c is injected to the center of the axis in the Z direction. These injection ports 14c can be arranged in a direction (Y direction) intersecting the moving direction (X direction) of the stage 14.
  • the heater 15 is built in the vapor deposition head 16c. In one embodiment, the heater 15 heats the vapor deposition head 16c to a temperature at which the vapor deposition material supplied as vapor to the vapor deposition head 16c does not precipitate.
  • FIG. 3 is a diagram illustrating an example of a completed state of an organic EL (Electro Luminescence) element that can be manufactured using the film forming apparatus according to an embodiment.
  • the organic EL element D shown in FIG. 3 may include a substrate S, a first layer D1, a second layer D2, a third layer D3, a fourth layer D4, and a fifth layer D5.
  • the substrate S is an optically transparent substrate such as a glass substrate.
  • a first layer D1 is provided on one main surface of the substrate S.
  • the first layer D1 can be used as an anode layer.
  • the first layer D1 is an optically transparent electrode layer, and may be formed of a conductive material such as ITO (Indium Tin Oxide).
  • the first layer D1 is formed by, for example, a sputtering method.
  • the second layer D2, the third layer D3, and the fourth layer D4 are sequentially stacked on the first layer D1.
  • the second layer D2, the third layer D3, and the fourth layer D4 are organic layers.
  • the second layer D2 can be a hole injection layer.
  • the third layer D3 is a layer including a light emitting layer, and may include, for example, a hole transport layer D3a, a blue light emitting layer D3b, a red light emitting layer D3c, and a green light emitting layer D3d.
  • the fourth layer D4 may be an electron transport layer.
  • the second layer D2, the third layer D3, and the fourth layer D4, which are organic layers, can be formed using the film forming apparatus 10.
  • the second layer D2 can be composed of, for example, TPD.
  • the hole transport layer D3a can be made of, for example, ⁇ -NPD.
  • the blue light emitting layer D3b can be made of, for example, TPD.
  • the red light emitting layer D3c can be formed of, for example, DCJTB.
  • the green light emitting layer D3d can be made of, for example, Alq3.
  • the fourth layer D4 can be made of, for example, LiF.
  • the fifth layer D5 is provided on the fourth layer D4.
  • the fifth layer D5 is a cathode layer and can be made of, for example, Ag, Al, or the like.
  • the fifth layer D5 can be formed by a sputtering method or the like.
  • the organic EL element D having such a configuration can be further sealed with an insulating sealing film made of a material such as SiN formed by microwave plasma CVD or the like.
  • FIG. 4 is a diagram schematically illustrating a gas supply source according to an embodiment.
  • the gas supply source 20c includes transport pipes L11, L21, L31, transport pipes (individual transport pipes) L12, L22, L32, transport pipes (common transport pipe) L40, and first steam generation.
  • the first steam generation unit 101 is accommodated in a storage chamber R1 defined by the first storage container 120.
  • the second and third steam generators 201 and 301 are accommodated in the accommodating chambers R2 and R3 defined by the second and third accommodating containers 220 and 320, respectively. That is, the first to third steam generation units 101 to 301 are individually accommodated in the accommodation chambers R1 to R3.
  • the first steam generation unit 101 includes a steam generation chamber 103 defined by a partition wall 102.
  • a container 104 in which a vapor deposition material X is placed is disposed in the steam generation chamber 103.
  • the first steam generator 101 is provided with a heater 105.
  • the heater 105 heats the vapor deposition material X put in the container 104.
  • the container 104 is carried into the steam generation chamber 103 from the outside of the first storage container 120 and the first storage from the inside of the steam generation chamber 103 through the outlets provided in the partition wall 102 and the first storage container 120, respectively. Carrying out of the container 120 is possible.
  • the second and third steam generation units 201 and 301 also include steam generation chambers 203 and 303 defined by partition walls 202 and 302, and heaters 205 and 305, respectively.
  • containers 204 and 304 in which the vapor deposition material X is placed are also arranged in the second and third steam generation units 201 and 301. Also in the second and third vapor generation units 201 and 301, vapor containing the vapor deposition material X is generated from the vapor deposition material X.
  • the containers 204 and 304 are carried into the steam generation chambers 203 and 303 from outside the second and third storage containers 220 and 320, and the second and third from the inside of the steam generation chambers 203 and 303. Carrying out of the storage containers 220 and 320 is possible.
  • the vapor deposition material X disposed in each of the first to third vapor generation units 101, 201, 301 may be the same type of vapor deposition material.
  • Transport pipes L11, L21, and L31 are connected to the first to third steam generation units 101, 201, and 301, respectively.
  • the transport pipes L11, L21, and L31 transport argon gas as a carrier gas into the steam generation chambers 103, 203, and 303 of the first to third steam generation units 101, 201, and 301, respectively.
  • another inert gas can be used instead of the argon gas.
  • one end of the transport pipe L12, one end of L22, and one end of L32 are connected to the first to third steam generation units 101, 201, 301, respectively.
  • the other end of the transport pipe L12, the other end of L22, and the other end of L32 are connected to the transport pipe L40.
  • the transport pipes L12, L22, and L32 transport the argon gas introduced into the steam generation chambers 103, 203, and 303 and the vapor of the vapor deposition material X into the processing chamber 12.
  • the transport pipe L40 transports the argon gas and the vapor of the vapor deposition material X transported into the processing chamber 12 by the transport pipes L12, 22, and 32 to the vapor deposition head 16c. That is, the vapor of the vapor deposition material X generated in the first to third vapor generation units 101, 201, 301 is transported to the vapor deposition head 16c together with the argon gas introduced into the vapor generation chambers 103, 203, 303.
  • the transport pipe L11 is provided with a valve V102, an adiabatic transport pipe 140, a valve V103, a first MFC (mass flow controller) 110, and a valve V104 in order from the side closer to the first steam generation unit 101.
  • the valves V102, V103, V104 are used for selectively blocking the flow of argon gas in the transport pipe L11.
  • the first MFC 110 controls the flow rate of argon gas flowing through the transport pipe L11.
  • the valve V102 and the heat insulating transport pipe 140 are provided in the transport pipe L11 in the first container 120.
  • Heaters 115a, 115b, and 115c are attached to the transport pipe L11 between the heat insulating transport pipe 140 and the valve V102, the valve V102, and the transport pipe L11 between the valve V102 and the first steam generation unit 101, respectively. ing.
  • the heaters 115a, 115b, and 115c can individually control the temperatures of the portions where the heaters are attached.
  • the transport pipe L11 and the valve V102 can be heated in the storage chamber R1 by these heaters so that the argon gas has a temperature corresponding to the vaporization temperature of the vapor deposition material X.
  • the heat insulating transport pipe 140 can suppress heat exchange between the transport pipe L11 outside the first storage container 120 and the transport pipe L11 in the first storage container 120. Therefore, the heat insulating transport pipe 140 has a thermal conductivity lower than that of the transport pipe L11.
  • the transport pipe L11 can be made of stainless steel, and the heat insulating transport pipe 140 can be made of quartz.
  • the transport pipe L12 is provided with an adiabatic transport pipe 141 and a valve V101 in order from the side closer to the first steam generation unit 101.
  • the valve V101 is provided in the transport pipe L12 in the processing chamber 12.
  • the valve V101 is used to selectively shut off the supply of argon gas and vapor of the vapor deposition material X from the transport pipe L12 to the transport pipe L40.
  • a heater (heating part) 125a and a heater (heating part) are respectively provided in the transport pipe L12 between the first steam generation part 101 and the heat insulation transport pipe 141 and the transport pipe L12 between the heat insulation transport pipe 141 and the valve V101. ) 125b is attached.
  • the heaters 125a and 125b it is possible to individually control the temperatures of the portions to which these heaters are attached. Moreover, the transport pipe L12 can be heated by these heaters to a temperature at which the vapor deposition material X does not precipitate.
  • the heat insulating transport pipe 141 is provided in the transport pipe L12 in the first container 120.
  • the heat insulating transport pipe 141 can suppress heat exchange between the transport pipe L12 outside the first storage container 120 and the transport pipe L12 in the first storage container 120. Therefore, the heat insulating transport pipe 141 has a thermal conductivity lower than that of the transport pipe L12.
  • the transport pipe L12 can be made of stainless steel, and the heat insulating transport pipe 141 can be made of quartz.
  • the transport pipe L21 is also provided with a valve V202, an adiabatic transport pipe 240, a valve V203, a second MFC 210, and a valve V204 in order from the side closer to the second steam generation unit 201.
  • the transport pipe L21, the valve V202, and the transport pipe L21 between the valve V202 and the second steam generator 201 are respectively provided with a heater 215a, a heater 215b, and a heater 215c. Is provided.
  • the configuration and function of the valve V202, the adiabatic transport pipe 240, the valve V203, the second MFC 210, the valve V204, the heater 215a, the heater 215b, and the heater 215c are as follows.
  • the functions and configurations of the heater 115b and the heater 115c are the same.
  • the transport pipe L22 is also provided with an adiabatic transport pipe 241 and a valve V201 in order from the side close to the second steam generation unit 201.
  • a heater (heating unit) 225a and a heater (heating) are provided in the transport pipe L22 between the second steam generation unit 201 and the heat insulation transport pipe 241 and the transport pipe L22 between the heat insulation transport pipe 241 and the valve V201.
  • Part) 225b are the same as the configurations and functions of the adiabatic transport pipe 141, the valve V101, the heater 125a, and the heater 125b, respectively.
  • the transport pipe L31 is also provided with a valve V302, an adiabatic transport pipe 340, a valve V303, a third MFC 310, and a valve V304 in order from the side closer to the third steam generation unit 301.
  • a heater 315a, a heater 315b, and a heater 315c are provided in the transport pipe L31, the valve V302, and the transport pipe L31 between the valve V302 and the third steam generation unit 301, respectively, between the heat insulating transport pipe 340 and the valve V302. Is provided.
  • valve V302 The configuration and function of the valve V302, the adiabatic transport pipe 340, the valve V303, the third MFC 310, the valve V304, the heater 315a, the heater 315b, and the heater 315c are as follows.
  • the functions and configurations of the heater 115b and the heater 115c are the same.
  • the transport pipe L32 is provided with an adiabatic transport pipe 341 and a valve V301 in order from the side close to the third steam generation unit 301, similarly to the transport pipe L32. Further, a heater (heating unit) 325a and a heater (heating) are provided in the transport pipe L32 between the third steam generation unit 301 and the heat insulation transport pipe 341 and the transport pipe L32 between the heat insulation transport pipe 341 and the valve V301. Part) 325b is provided.
  • the configurations and functions of the adiabatic transport pipe 341, the valve V301, the heater 325a, and the heater 325b are the same as the configurations and functions of the adiabatic transport pipe 141, the valve V101, the heater 125a, and the heater 125b, respectively.
  • the transport pipe L40 is provided with a heater (heating unit) 415 for heating the transport pipe L40.
  • the heater 415 heats the transport pipe L40 to a temperature at which the vapor deposition material X that has become vapor does not precipitate.
  • the heaters 125a-b, 225a-b, 325a-b, 415 can be controlled in temperature independently of each other.
  • the gas supply source 20c is provided with a decompression mechanism 500 that decompresses the storage chambers R1 to R3. More specifically, the decompression mechanism 500 includes decompression pipes L501, L511, L521, and L531, valves V107, V207, and V307, a turbo molecular pump (TMP) 501, and a dry pump (DP) 502.
  • TMP turbo molecular pump
  • DP dry pump
  • One end of the decompression pipe L511 is connected to the first storage container 120 so as to communicate with the storage chamber R1.
  • one end of the decompression pipe L521 and one end of L531 are connected to the second and third storage containers 220 and 320, respectively, so as to communicate with the storage chambers R2 and R3.
  • the other ends of the decompression pipes L511, L521, and L531 are connected to the decompression pipe L501.
  • the decompression pipe L501 is connected to the turbo molecular pump 501 and the dry pump 502.
  • the storage chamber R1 is decompressed via the decompression pipes L501 and L511, the accommodation chamber R2 is decompressed via the decompression pipes L501 and L521, and the decompression pipes L501 and L531 are used.
  • the storage chamber R3 is decompressed.
  • Valves V107, V207, and V307 are provided in the decompression pipes L511, L521, and L531, respectively.
  • the storage chambers R1 to R3 can be selectively decompressed independently.
  • the pressure in the storage chambers R1 to R3 it is possible to suppress moisture and the like from adhering to the vapor deposition material X in the first to third steam generation units 101, 201, and 301. Further, the heat insulating effect of the storage chambers R1 to R3 is improved.
  • the film forming apparatus 10 may further include a QCM (Quartz Crystal Microbalance) sensor 30.
  • the QCM sensor 30 can be installed in the vicinity of the substrate S disposed in the processing chamber 12.
  • the QCM sensor 30 measures the amount of the vapor deposition material ejected from the vapor deposition head 16c.
  • the film forming apparatus 10 may further include a gas discharge system (discharge pipe) 600.
  • the gas discharge system 600 individually and selectively discharges the gas from the first to third steam generation units 101, 201, and 301 to the outside instead of the vapor deposition head 16c.
  • the gas discharge system 600 includes discharge pipes L601, L611, L621, L631, valves V105, V205, V305, heat insulation pipes 142, 242, 342, and heaters 155a-c, 255a-c, 355a-c. Prepare.
  • the discharge pipe L611 is branched from the transport pipe L12 between the heat insulating transport pipe 141 and the first steam generation unit 101.
  • the discharge pipe L611 guides the argon gas and the vapor of the vapor deposition material X flowing through the transport pipe L12 to the outside of the first container 120, not the vapor deposition head 16c.
  • the discharge pipes L621 and L631 are branched from the transport pipes L22 and L32, respectively.
  • the discharge pipes L621 and L631 guide the argon gas flowing in the transport pipes L22 and L32 and the vapor of the vapor deposition material X to the outside of the second and third storage containers 220 and 320, not the vapor deposition head 16c.
  • the discharge pipe L611 is connected to the discharge pipe L601 outside the first container 120.
  • the discharge pipe L621 is connected to the discharge pipe L601 outside the second storage container 220.
  • the discharge pipe L631 is connected to the discharge pipe L601 outside the third storage container 320.
  • the discharge pipe L601 discharges the argon gas and the vapor of the vapor deposition material X guided outside the first to third storage containers 120, 220, and 320 to the outside of the film forming apparatus 10 instead of the vapor deposition head 16c.
  • Valves V105, V205, and V305 are provided on the discharge pipes L611, L621, and L631, respectively.
  • the gas from the first steam generation unit 101 can be selectively supplied to the vapor deposition head 16c via the transport pipes L12 and L40 or discharged via the discharge pipes L611 and L601. it can.
  • the gas from the second steam generation unit 201 is selectively supplied to the vapor deposition head 16c via the transport pipes L22 and L40, or discharged via the discharge pipes L621 and L601. can do.
  • the gas from the third steam generating unit 301 can be selectively supplied to the vapor deposition head 16c via the transport pipes L32 and L40 or discharged via the discharge pipes L631 and L601. .
  • a heater 155a, a heater 155b, and 155c are provided in a discharge pipe L611, a valve V105, and a discharge pipe L611 between the valve V105 and the heat insulation pipe 142, respectively, between the transport pipe L12 and the valve V105. Is provided.
  • a heater 255a, heaters 255b, and 255c are provided in a discharge pipe L621 between the transport pipe L22 and the valve V205, a valve V205, and a discharge pipe L621 between the valve V205 and the heat insulation pipe 242, respectively. Yes.
  • a heater 355a, a heater 355b, and 355c are provided in the discharge pipe L631, the valve V305, and the discharge pipe L631 between the valve V305 and the heat insulation pipe 342, respectively, between the transport pipe 322 and the valve V305. It has been. With this configuration, it is possible to suppress the deposition material X from being deposited in each of the discharge pipes L611, L621, and L631 in the storage chambers R1, R2, and R3.
  • a heat insulating pipe 142 is provided between the discharge pipe L611 outside the first storage container 120 and the discharge pipe L611 inside the first storage container 120.
  • the heat insulating pipe 142 suppresses heat exchange between the discharge pipe L611 outside the first storage container 120 and the discharge pipe L611 inside the first storage container 120.
  • a heat insulating pipe 242 is provided between the discharge pipe L621 outside the second storage container 220 and the discharge pipe L621 in the second storage container 220, and the heat insulation pipe 242 is connected to the second storage container 220. Heat exchange between the outer discharge pipe L621 and the discharge pipe L621 in the second container 220 is suppressed.
  • a heat insulating pipe 342 is provided between the discharge pipe L 631 outside the third storage container 320 and the discharge pipe L 631 in the third storage container 320, and the heat insulation pipe 342 is connected to the third storage container 320. Heat exchange between the outer discharge pipe L631 and the discharge pipe L631 in the third storage container 320 is suppressed.
  • the discharge pipes L611, 621, and 631 can be made of stainless steel, and the heat insulation pipes 142, 242, and 342 can be made of quartz.
  • the film forming apparatus 10 may further include a gas introduction system (gas introduction path) 700 that introduces a purge gas into the storage chambers R1 to R3.
  • the gas introduction system 700 includes introduction pipes L701, L711, L721, and L731, and valves V106, V206, and V306.
  • Nitrogen gas may be introduced into the introduction pipe L701. In addition, it can replace with nitrogen gas and can also use other gas.
  • One end of the introduction pipe L711 is connected to the first storage container 120 so as to communicate with the storage chamber R1. The other end of the introduction pipe L711 is connected to the introduction pipe L701.
  • introduction pipes L721 and L731 are connected to the second and third storage containers 220 and 320, respectively, so as to communicate with the storage chambers R2 and R3.
  • the other ends of the introduction pipes L721 and L731 are connected to the introduction pipe L701.
  • the introduction pipes L711, L721, and L731 guide nitrogen gas flowing through the introduction pipe L701 into the storage chambers R1 to R3, respectively.
  • the valves V106, V206, V306 are provided in the introduction pipes L711, L721, L731, respectively.
  • the nitrogen gas flowing through the introduction pipe L701 can be selectively introduced into the storage chamber R1 via the introduction pipe L711 or blocked.
  • the nitrogen gas flowing through the introduction pipe L701 can be selectively introduced into the storage chamber R2 via the introduction pipe L721 or blocked.
  • the nitrogen gas flowing through the introduction pipe L701 can be selectively introduced into the storage chamber R3 via the introduction pipe L731 or blocked.
  • high-temperature heat-resistant valves may be used as the valves V101, V102, and V105 provided in the transport pipes L12 and L11 and the discharge pipe L611 that are heated by a heater, respectively.
  • high-temperature heat-resistant valves may be used as the valves V201, V202, and V205 provided in the transport pipes L22 and L21 and the discharge pipe L621 that are heated by the heater, respectively.
  • high temperature heat resistant valves may be used as the valves V301, V302, V305 provided in the transport pipes L32, L31 and the discharge pipe L631 respectively heated by the heater.
  • FIG. 5 is a cross-sectional view of a high temperature heat resistant valve according to an embodiment.
  • the term “one end” is used as a term indicating the direction to indicate the direction in which the front member 901 is positioned with respect to the bonnet 902, and the term “other end” is used as a term indicating the opposite direction.
  • a high temperature heat resistant valve Y shown in FIG. 5 has a cylindrical valve box 905.
  • the valve box 905 includes a front member 901, a central bonnet 902, and a rear member 903.
  • the valve box 905 is hollow.
  • a valve body 910 is accommodated inside the valve box 905.
  • a heater 950 for heating the high temperature heat resistant valve Y is embedded in the front member 901 and the bonnet 902.
  • the valve body 910 includes a valve body head portion 910a, a valve body body portion 910b, a valve shaft 910c, and a bellows 925.
  • the valve body head portion 910a and the valve body portion 910b are connected by a valve shaft 910c.
  • the valve shaft 910c formed in a rod shape passes through the inner hole of the hollow valve body 910b.
  • One end of the valve shaft 910c is fitted into a recess 910a1 provided at the center of the valve body head 910a.
  • a forward path 900a1 and a return path 900a2 of the transport pipe are formed in the front member 901, a forward path 900a1 and a return path 900a2 of the transport pipe are formed.
  • a valve seat surface 900a3 with which the valve body head portion 910a abuts is provided at the opening edge of the forward path 900a1 in the front member 901.
  • the protrusion 910b1 provided on the outer peripheral surface of the valve body 910b on the rear member 903 side is inserted into an annular recess 905a1 provided on the inner peripheral surface of the bonnet 902.
  • a space in which the valve body 910b can slide in the longitudinal direction is provided in the recess 905a1.
  • a heat-resistant buffer member 915 is disposed in a space in which the valve body part 910b can slide in the recess 905a1.
  • a metal gasket can be used as the buffer member 915.
  • the buffer member 915 separates the reduced pressure environment on the front member 901 side and the atmospheric pressure environment on the rear member 903 side in the inner hole of the hollow bonnet 902.
  • One end of the bellows 925 is welded to the valve body head 910a, and the other end of the bellows 925 is welded to the outer peripheral surface of the valve body body 910b.
  • the rear member 903 includes a drive unit 930 that moves the valve shaft 910c in the axial direction of the valve shaft 910c.
  • the drive unit 930 moves the valve shaft 910c to one end side, the valve body head portion 910a contacts the valve seat surface 900a3.
  • the drive unit 930 moves the valve shaft 910c to the other end side, so that a gap is formed between the valve body head portion 910a and the valve seat surface 900a3.
  • valve body 910 since the valve body part 910b and the valve body head part 910a are separated, the clearance (gap) between the valve body part 910b and the valve shaft 910c is controlled, so that the valve body part 910b can be opened and closed.
  • the shift of the center position of the valve body 910 can be corrected.
  • a play 910a2 is provided in the recess 910a1 of the valve body head portion 910a in a state where the valve shaft 910c is inserted. Thereby, the slight shift
  • valve body head portion 910a can be brought into contact with the valve seat surface 900a3 of the front member 901 without deviation. For this reason, the adhesiveness of the valve body head part 910a and the valve seat surface 900a3 can be improved, and a leak can be prevented. Further, even if the high-temperature heat-resistant valve Y is used in a high-temperature state or a low-temperature state, the influence of the metal thermal expansion can be absorbed by the separation structure of the valve body 910. Thereby, the leak of the valve body part at the time of opening and closing can be prevented effectively.
  • the high temperature heat resistant valve Y described above can be applied to the valves V101, V102, V105, V201, V202, V205, V301, V302, and V305.
  • FIG. 6 is a block diagram illustrating a control unit according to an embodiment.
  • the control unit 800 illustrated in FIG. 6 can be, for example, a computing device having a CPU (Central Processing Unit) and a memory.
  • the control unit 800 includes an MFC control unit 810, a valve control unit 820, and a heater control unit 830.
  • the MFC control unit 810 may control the first to third MFCs 110, 210, and 310 based on the measurement result of the QCM sensor 30. Specifically, the MFC control unit 810 sends a control signal for controlling the flow rate to the first to third MFCs 110, 210, and 310. When the amount of the vapor deposition material ejected from the vapor deposition head 16c is small, the MFC control unit 810 controls the first to third MFCs 110, 210, and 310 to reduce the amount of argon gas flowing through the transport pipes L11, L21, and L31. increase.
  • the MFC control unit 810 controls the first to third MFCs 110, 210, and 310, and argon gas flowing through the transport pipes L11, L21, and L31. Reduce the amount of. As described above, the amount of the vapor deposition material ejected from the vapor deposition head 16c varies depending on the amount of argon gas supplied to the first to third vapor generation units 101, 201, and 301.
  • the valve control unit 820 controls the opening and closing of the valves V101 to V107, V201 to V207, and V301 to V307. Specifically, the valve control unit 820 sends a control signal for controlling opening / closing of the valves to the valves V101 to V107, V201 to V207, and V301 to V307.
  • the valve control unit 820 controls the valves V101, V102, V103, and V104 to an open state (distribution state).
  • the valve control unit 820 controls the valves V101, V102, V103, and V104 to be closed (shut off state).
  • the valve control unit 820 controls the valve V107 to be in an open state.
  • the valve control unit 820 controls the valve V107 to be closed.
  • valve control unit 820 controls the valve V105 to be in an open state.
  • the valve control unit 820 controls the valve V105 to be closed.
  • nitrogen gas is introduced into the storage chamber R1 via the gas introduction system 700
  • the valve control unit 820 controls the valve V106 to be in an open state.
  • the valve control unit 820 controls the valve V106 to be closed.
  • valve control unit 820 controls the valves V201, V202, V203, and V204 to be in an open state.
  • the valve control unit 820 controls the valves V201, V202, V203, and V204 to be closed.
  • the valve control unit 820 controls the valve V207 to be in an open state.
  • the valve control unit 820 controls the valve V207 to be closed.
  • valve control unit 820 controls the valve V205 to be in an open state.
  • the valve control unit 820 controls the valve V205 to be closed.
  • nitrogen gas is introduced into the storage chamber R2 via the gas introduction system 700
  • the valve control unit 820 controls the valve V206 to be in an open state.
  • the valve controller 820 controls the valve V206 to be closed.
  • valve control unit 820 controls the valves V301, V302, V303, and V304 to be in an open state.
  • the valve control unit 820 controls the valves V301, V302, V303, and V304 to be closed.
  • the valve control unit 820 controls the valve V307 to be in an open state.
  • the valve control unit 820 controls the valve V307 to be closed.
  • valve control unit 820 controls the valve V305 to be in an open state.
  • the valve control unit 820 controls the valve V305 to be closed.
  • nitrogen gas is introduced into the storage chamber R3 via the gas introduction system 700
  • the valve control unit 820 controls the valve V306 to be in an open state.
  • the valve control unit 820 controls the valve V306 to be closed.
  • the heater controller 830 controls on / off (heated / non-heated) of the heaters 105, 205, and 305 provided in the first to third steam generators 101, 201, and 301. Specifically, the heater control unit 830 sends a control signal for controlling heater ON / OFF to the heaters 105, 205, and 305.
  • the valve control unit 820 and the heater control unit 830 include a path for supplying the vapor generated by the first vapor generation unit 101 to the vapor deposition head 16c, and a path for supplying the vapor generated by the second vapor generation unit 201 to the vapor deposition head 16c.
  • the path for supplying the vapor generated by the third vapor generation unit 301 to the vapor deposition head 16c is sequentially switched.
  • valve control unit 820 and the heater control unit 830 always supply the vapor containing the vapor of the vapor deposition material X generated in any of the first to third vapor generation units 101, 201, 301 to the vapor deposition head 16c. As described above, each part is controlled.
  • FIG. 7 is a diagram illustrating a flow of processing performed by the MFC control unit and the valve control unit according to an embodiment.
  • the horizontal axis represents the time axis
  • the vertical axis represents the control state of the valves and heaters.
  • FIG. 8 is a diagram showing the states of the first to third steam generation units according to one embodiment.
  • the horizontal axis represents the time axis
  • the vertical axis represents the temperature of each steam generating unit.
  • the heater control unit 830 controls the heater 105 to a heated state (on) and the other heaters to a non-heated state (off).
  • the valve control unit 820 controls the valves V102 to V105, V107, V207, and V307 to be in an open state, and controls the other valves to be in a closed state.
  • the heater 105 is in a heated state
  • the vapor of the vapor deposition material X starts to be generated in the first vapor generation unit 101.
  • the valves V102 to V105 are in the open state
  • the vapor of the vapor deposition material X generated in the first vapor generation unit 101 is transported by the argon gas and discharged from the gas discharge system 600.
  • a sufficient amount of vapor may not be generated. For this reason, the steam immediately after the start of heating is discharged from the gas discharge system 600.
  • the valves V107, V207, and V307 are in the open state, the inside of the storage chambers R1 to R3 is decompressed.
  • the valve control unit 820 controls the valve V101 to be open and controls the valve V105 to be closed.
  • steam of the vapor deposition material X generated in the 1st vapor generation part 101 is conveyed to the vapor deposition head 16c by argon gas, and is injected toward the board
  • the valve V105 By controlling the valve V105 to be in a closed state, the discharge of the gas in the first steam generation unit 101 through the gas discharge system 600 is stopped.
  • the heater control unit 830 controls the heater 205 to a heated state (ON) at a time t3 that is a predetermined time before the vapor deposition material X in the first vapor generation unit 101 is reduced by evaporation and the replacement time is reached.
  • the valve control unit 820 controls the valves V202 to V205 to be in an open state.
  • the remaining amount of the vapor deposition material X in the first vapor generation unit 101 can be estimated based on the elapsed time from the start of heating of the vapor deposition material X, or can be measured using a laser beam or the like. .
  • valves V202 to V205 are in the open state, the vapor of the vapor deposition material X generated in the second vapor generation unit 201 is transported by the argon gas and discharged from the gas discharge system 600. Since the heating of the vapor deposition material X in the second vapor generation unit 201 is started immediately before use, the vapor deposition material X can be prevented from being deteriorated by heating.
  • the valve control unit 820 controls the valves V101 to V104, V107, and V205 to be closed, and the valves V106 and V201 to be closed. Control to open state.
  • the heater control unit 830 controls the heater 105 to a non-heated state (off).
  • Nitrogen gas is introduced into the storage chamber R1 of the first steam generation unit 101 by controlling the valve V106 to be in the open state. Thereby, the temperature of the 1st steam generation part 101 can be reduced rapidly. After the temperature in the first steam generation unit 101 decreases, the container 104 is taken out, and the container 104 in which a new vapor deposition material X is placed is carried into the first steam generation unit 101.
  • the heater control unit 830 controls the heater 305 to be in a heated state (ON) at a time t5 that is a predetermined time before the vapor deposition material X in the second steam generation unit 201 is reduced due to evaporation and the replacement time is reached.
  • the valve control unit 820 controls the valves V302 to V305 to the open state. Since the valves V302 to V305 are in the open state, the vapor of the vapor deposition material X generated in the third vapor generation unit 301 is transported by the argon gas and discharged from the gas discharge system 600.
  • the valve control unit 820 controls the valves V201 to V204, V207, and V305 to be closed and the valves V206 and V301 to be closed. Control to open state.
  • the heater control unit 830 controls the heater 205 to a non-heated state (off).
  • Nitrogen gas is introduced into the storage chamber R2 of the second steam generation unit 201 by controlling the valve V206 to be in the open state. Thereby, the temperature of the 2nd steam generation part 201 can be reduced rapidly. After the temperature in the second steam generation unit 201 is lowered, the container 204 is taken out, and the container 204 containing the new vapor deposition material X is carried into the second steam generation unit 201.
  • the heater control unit 830 controls the heater 105 to be in a heated state (ON) at a time t7 that is a predetermined time before the vapor deposition material X in the third steam generation unit 301 is reduced due to evaporation and the replacement time is reached.
  • the valve control unit 820 controls the valves V102 to V105 and 107 to the open state and controls the valve V106 to the closed state. Since the valves V102 to V105 are in the open state, the vapor of the vapor deposition material X generated in the first vapor generation unit 101 is transported by the argon gas and discharged from the gas discharge system 600.
  • the valve control unit 820 controls the valves V301 to V304, V307, and V105 to be closed, and the valves V306 and V101 are closed. Control to open state.
  • the heater control unit 830 controls the heater 305 to a non-heated state (off).
  • Nitrogen gas is introduced into the storage chamber R3 of the third steam generation unit 301 by controlling the valve V306 to be in the open state. Thereby, the temperature of the 3rd steam generation part 301 can be reduced rapidly. After the temperature in the 3rd steam generation part 301 falls, the container 304 is taken out and the container 304 in which the new vapor deposition material X was put in is carried in in the 3rd steam generation part 301.
  • FIG. 1 Nitrogen gas is introduced into the storage chamber R3 of the third steam generation unit 301 by controlling the valve V306 to be in the open state. Thereby, the temperature of the 3rd steam generation part 301 can be reduced rapidly. After the temperature in the 3rd steam generation part 301 falls, the container 304 is taken out and the container 304 in which the new vapor deposition material X was put in is carried in in the 3rd steam generation part 301.
  • valve control unit 820 and the heater control unit 830 repeatedly perform the processing after time t2.
  • the gas supply source 20c will be representatively described with reference to the drawings of the gas supply source 20c.
  • the first to third vapor generating units 101, 201, and 301 that generate vapors of the same vapor deposition material X are connected to the vapor deposition head 16c. Accordingly, in the gas supply source 20c, even when the vapor deposition material X of one vapor generation unit is exchanged, the gas containing the vapor of the vapor deposition material X is supplied from the other vapor generation unit to the vapor deposition head 16c. Can do. Therefore, according to the film forming apparatus 10, the throughput can be increased.
  • the first to third steam generation units 101, 201, and 301 of the gas supply source 20c can be individually decompressed and stored in storage chambers R1 to R3 that are separated from each other. Therefore, for example, even if the temperature of the first steam generation unit 101 is decreased during the exchange of the vapor deposition material X of the first steam generation unit 101, the decrease in the temperature is the temperature of the second and third steam generation units 201 and 301. Can be suppressed. Therefore, the throughput of the film forming process is increased. Moreover, since it can suppress that the temperature influences the 2nd, 3rd steam generation parts 201 and 301 during use of the 1st steam generation part 101, it can control degradation of vapor deposition material X by prolonged heating. it can.
  • heat transfer from the vapor deposition head 16c to the vapor generation chambers 103, 203, and 303 can be further suppressed, so that deterioration of the vapor deposition material X can be suppressed. .
  • a gas introduction system 700 that can individually control the supply of nitrogen gas to the storage chambers R1 to R3 can be provided. As a result, the temperatures of the first to third steam generation units 101, 201, and 301 for exchanging the vapor deposition material X can be lowered more quickly.
  • the transport pipes L12, L22, and L32 are connected to the first to third steam generation units 101, 201, and 301, respectively, and extend in the storage chambers R1 to R3, respectively.
  • the transport pipe L40 communicates with the transport pipes L12, L22, L32 and extends in the processing chamber and is connected to the vapor deposition head 16c.
  • the transport pipes L12, L22, and L32 extend into the accommodating chambers R1 to R3 that can be decompressed, fluctuations in the temperature of the transport pipes L12, L22, and L32 can be suppressed.
  • the deposition of the vapor deposition material X in the transport pipes L12, L22, L32 can be suppressed.
  • the quality deterioration of the vapor deposition material X can be suppressed.
  • the heaters 115a to c, 125a to b, 155a to c, 215a to c, 225a in the storage chambers R1 to R3 are separated. .., 255a to c, 315a to c, 325a to b, and 355a to c can be prevented from flowing into the processing chamber 12.
  • the second steam generation unit In 201 since the gas discharge system 600 connected to the transport pipes L12, L22, and L32 is provided, for example, before the vapor deposition material X is replaced in the first steam generation unit 101, the second steam generation unit In 201, the generation of the gas containing the vapor of the vapor deposition material X can be started, and the gas can be discharged to the gas discharge system 600.
  • the vapor generating unit that supplies gas to the vapor deposition head 16c can be efficiently switched from the first vapor generating unit 101 where the vapor deposition material X is exchanged to the second vapor generating unit 201.
  • valves V101, V102, V105, V201, V202, V205, V301, V302, V305 for example, switching between passage and shutoff of high temperature gas such as 300 degrees or more is switched. be able to.
  • FIG. 9 is a diagram schematically illustrating a gas supply source that generates a vapor of a dopant material and a vapor of a host material according to an embodiment.
  • the gas supply source 20c shown in FIG. 9 has a fourth steam generator 401 added to the gas supply source 20c described with reference to FIG. Only the newly added configuration will be described below.
  • the gas supply source 20c further includes transport pipes L41 and L42, a fourth steam generation unit 401, and a fourth storage container 420.
  • the fourth steam generation unit 401 is accommodated in a storage chamber R4 defined by the fourth storage container 420.
  • the fourth steam generation unit 401 includes a steam generation chamber 403 defined by a partition wall 402.
  • a container 404 in which the vapor deposition material Z is placed is disposed.
  • the fourth steam generation unit 401 is provided with a heater 405.
  • the heater 405 heats the vapor deposition material Z placed in the container 404. Thereby, in the 4th vapor generation part 401, the vapor
  • the configuration of the transport pipes L41 and L42 is the same as the configuration of the transport pipes L11 and L12. Further, the configuration of the valve V402, the heat insulating transport pipe 440, the valve V403, the fourth MFC 410, the valve V404, and the heaters 415a to c provided in the transport pipe L41 is the same as that of the valve V102, the heat insulating transport pipe 140 provided in the transport pipe L11, The configurations of the valve V103, the first MFC 110, the valve V104, and the heaters 115a to 115c are the same.
  • the configuration of the heat insulating transport pipe 441, the valve V401, and the heaters (heating units) 425a to 425b provided in the transport pipe L42 is the same as that of the heat insulating transport pipe 141, the valve V101, and the heaters 125a to 125b provided in the transport pipe L12. It is the same as that of the structure.
  • the configurations of the discharge pipe L641, the valve V405, the heat insulation pipe 442, and the heaters 455a to c provided in the discharge pipe L641 are the same as the configurations of the discharge pipe L611, the valve V105, the heat insulation pipe 142, and the heaters 155a to 155c. is there.
  • the configuration of the introduction pipe L741 and the valve V406 provided in the introduction pipe L741 is the same as the configuration of the introduction pipe L711 and the valve V106. Further, the configuration of the decompression pipe L541 and the valve V407 provided in the decompression pipe L541 is the same as the configuration of the decompression pipe L511 and the valve V107.
  • the same type of host material is used for the vapor deposition material X disposed in the first to third steam generation units 101, 201, and 301.
  • a dopant material is used for the vapor deposition material Z disposed in the fourth vapor generation unit 401.
  • the QCM sensor 30a may be arranged in the accommodation room R4.
  • the vapor of the vapor deposition material Z flowing through the transport pipe L42 is applied to the QCM sensor 30a, and the amount of the vapor deposition material Z is measured by the QCM sensor 30a.
  • the fourth MFC 410 can control the flow rate of the argon gas sent to the fourth steam generation unit 401.
  • the vapor deposition material X in the first to third steam generation units 101, 201, 301 is sequentially replaced as in the above-described embodiment.
  • the gas supply source 20c includes a fourth vapor generating unit 401 that generates a vapor of a dopant material, and first to third vapor generating units 101, 201, and 301 that generate a vapor of the same type of host material.
  • the host material is used in a larger amount than the dopant material. Therefore, by increasing the number of steam generating parts for the host material than the number of steam generating parts for the dopant material, the host material is supplied in a larger amount than the amount of the dopant material while suppressing deterioration in the quality of the host material. can do.
  • one or more vapor generation units that generate the vapor of the dopant material may be provided. Also in this case, the number of vapor generating parts that generate the vapor of the host material can be made larger than the number of vapor generating parts that generate the vapor of the dopant material.
  • all of the gas supply sources 20a to 20f are provided with a plurality of steam generation units as described with reference to FIGS. 4 and 9, but among the gas supply sources 20a to 20f, It suffices that at least one gas supply source includes a plurality of steam generation units. Further, the number of steam generation units provided in the gas supply source is not limited to three or four as described with reference to FIGS. 4 and 9, and may be two or more.
  • Example 1 will be described.
  • the following Example 1 is based on the device configuration of each of the above embodiments.
  • Example 1 is an example of a heater structure related to temperature control of piping such as the heaters 415 and 225 of FIG. Further, Example 1 relates to the black plating of a Cu heat block that surrounds the SUS pipe from the outside with the cartridge heater interposed therebetween.
  • the surface of the SUS pipe and the inner surface of the heat block are black-plated to increase the radiant heat transfer rate and make the temperature distribution of the SUS pipe uniform.
  • the outside of the heat block is Ni-plated and has a low emissivity. This is a superordinate concept.
  • Each of the following structures also includes this content. This content is disclosed in, for example, FIG. 10-2.
  • Example 1 unevenness is provided at the bottom of the material container to increase the surface area, and the heater side is black plated.
  • This is a structure in which the circular dish in FIG. There is an uneven shape on the corresponding Cu block side of the heater side. As a result, the heat transfer coefficient is improved, and high temperature control is facilitated.
  • the first embodiment has a structure in which the temperature of the SUS portion where the vapor deposition material flows from the outside is similarly controlled by radiant heat.
  • the nozzle portion has a structure in which different materials are mixed, and the temperatures are different.
  • a water wall is provided between the gas supply units in order to control temperature interference.
  • FIG. 10-9 if radiation heat at the tip of the vapor deposition head propagates to the vapor deposition mask, the mask may be deformed. It is the structure which prevents it from affecting.
  • the shape of the material container into which the organic EL material is introduced is introduced, the shape of the evaporation material transport passage partition wall where the material container is installed and its surface state, and the material and surface state of the heater heat transfer member are respectively transferred to the heat.
  • the rate it is intended to improve efficiency, heat uniformity, and transfer rate.
  • Example 1 the temperature uniformity of the material container (organic material) / transport route is high, so that the evaporation control becomes easy. Moreover, according to Example 1, since temperature controllability is high, it can be suppressed to the minimum necessary temperature, and material deterioration and deposition to unnecessary portions are also suppressed. Moreover, according to Example 1, the input electric power to the heater can be efficiently transmitted to the organic material. In addition, heating and cooling time can be shortened, and waste of materials (material use efficiency) can be saved (maintenance time can also be shortened).
  • Example 1 will be specifically described below.
  • Example 1 discloses each part heating structure of the organic EL vapor deposition apparatus excellent in temperature controllability.
  • the heating source (heater) and the object to be heated are all configured in the vacuum chamber.
  • FIG. 10A is a diagram illustrating an outline of the overall configuration of the film forming apparatus according to the first embodiment.
  • the film forming apparatus 1000 includes a material container 1100, a transport pipe 1200, and a vapor deposition head 1300.
  • the material container 1100 is a container for storing a vapor deposition material.
  • the transport pipe 1200 is a transport path for transporting a gas containing vapor of the vapor deposition material evaporated in the material container 1100, and is formed of, for example, SUS.
  • the vapor deposition head 1300 injects the vapor deposition material gas transported through the transport pipe 1200 toward the substrate 1500.
  • the material container 1100, the transport pipe 1200, and the vapor deposition head 1300 are covered with soaking blocks 1110, 1210, and 1310, respectively.
  • the soaking blocks 1110, 1210, and 1310 are formed of a material (for example, Cu) having a higher thermal conductivity than the material (SUS) of the transport pipe 1200, for example.
  • the film forming apparatus 1000 includes a heating element such as a heater that heats the material container 1100, the transport pipe 1200, and the vapor deposition head 1300, respectively.
  • the heater is embedded in the soaking blocks 1110, 1210, and 1310 to heat the material container 1100, the transport pipe 1200, and the vapor deposition head 1300, respectively.
  • the soaking blocks 1110, 1210, and 1310 are provided so as to cover the heating element that heats the material container 1100, the transport pipe 1200, and the vapor deposition head 1300.
  • a heating element that heats the material container 1100, the transport pipe 1200, and the vapor deposition head 1300 is housed in a vacuum container 1400. Note that the substrate 1500 is also accommodated in the vacuum vessel 1400.
  • the material container 1100, the transport pipe 1200, the vapor deposition head 1300, and the heating element for heating these components are accommodated in the vacuum container 1400. Therefore, the material container 1100, the transport pipe 1200, And the thermal uniformity between the vapor deposition heads 1300 can be improved.
  • the gas flow vapor deposition apparatus that connects the material container 1100 and the vapor deposition head 1300 with the transport pipe 1200 is shown, but the present invention is not limited thereto.
  • the present invention can be similarly applied to a gas flow vapor deposition apparatus having a transport path (transport path) for transporting a gas containing vapor of a vapor deposition material evaporated in the material container 1100 to the vapor deposition head 1300.
  • transport path transport path
  • Heating source (heater) ⁇ evaporation material transport path partition ⁇ heat transfer to the material container eliminates contact with parts with temperature differences so that radiant heat transfer is the basis, and the only support that supports parts is point contact (and (Securing a minimum cross section and a certain distance), and the material should be of low thermal conductivity. (Example: SUS material, etc.)
  • the transport path material is a material with low thermal conductivity (eg, SUS)
  • the outer surface of the transport path is surrounded by the above-mentioned soaking block without any gaps, so that the heat transfer with the outside can be controlled with the soaking block. Since it is only radiation, the transportation route is soaked.
  • FIG. 10-2 is a diagram showing an outline of the configuration of the transportation piping.
  • FIG. 10-2 is a cross-sectional view of the transport pipe 1200 and parts provided around the transport pipe 1200.
  • the soaking block 1210 is provided so as to cover the periphery of the transport pipe 1200.
  • the soaking block 1210 is provided so as to cover the periphery of the heater 1220.
  • a plurality of protrusions 1202 are formed on the pipe outer peripheral surface of the transport pipe 1200 at intervals, and the plurality of protrusions 1202 and the inner surface of the soaking block 1210 are in contact with each other.
  • the transport pipe 1200 is supported by the soaking block 1210 by the protrusion 1202 in a point contact. Since the soaking block 1210 is formed of a material (for example, Cu) having a higher thermal conductivity than the transport pipe 1200, for example, the heat from the heater 1220 can be efficiently transferred to the transport pipe 1200.
  • the inner surface 1212 facing the transport pipe 1200 has a higher emissivity than the outer surface 1214 of the soaking block 1210 on the vacuum vessel 1400 side.
  • the inner surface 1212 of the soaking block 1210 has an emissivity of about 0.8 to 0.9 by black nickel plating.
  • the outer surface 1214 of the soaking block 1210 is formed to have an emissivity of about 0.1 to 0.2 by nickel plating.
  • the radiant heat is efficiently transmitted from the heater 1220 to the transport pipe 1200 via the soaking block 1210. Can transfer heat.
  • the outer surface 1204 facing the soaking block 1210 has a higher emissivity than the outer surface 1214 of the soaking block 1210 on the vacuum vessel 1400 side.
  • the outer surface 1204 of the transport pipe 1200 is formed with an emissivity of about 0.8 to 0.9 by black nickel plating.
  • the radiant heat is efficiently transferred from the heater 1220 to the transport pipe 1200 via the soaking block 1210. Heat can be transferred.
  • a heat shielding plate 1230 for shielding heat is provided between the soaking block 1210 and the vacuum vessel 1400.
  • the heat shielding plate 1230 By providing the heat shielding plate 1230, heat generated by the heater 1220 can be suppressed from being transferred to the outside of the soaking block 1210. As a result, by providing the heat shielding plate 1230, heat can be efficiently transferred from the heater 1220 to the transport pipe 1200 via the soaking block 1210.
  • the heat transfer coefficient is improved by performing a surface treatment so that both the fin-shaped surfaces (even when not fin-shaped) have high emissivity.
  • the surface area UP and the surface emissivity control by the fin shape also hold between the transportation path material containers.
  • FIG. 10C is a diagram illustrating an outline of the configuration of the material container.
  • the material container 1100 is covered with a soaking block 1110, and a heater 1120 is embedded in the soaking block 1110.
  • the material container 1100 is made of, for example, SUS.
  • the soaking block 1110 is made of Cu, for example.
  • the heat generated in the heater 1120 is radiatively transferred to the material container 1100 via the soaking block 1110 to heat / evaporate the organic material stored in the material container 1100.
  • the material container 1100 and the soaking block 1110 have irregularities formed on the surfaces facing each other. More specifically, unevenness 1102 is formed on the lower surface of the material container 1100, and unevenness 1112 is formed on the surface of the soaking block 1110 that faces the lower surface of the material container 1100. As a result, the material container 1100 and the soaking block 1110 are arranged such that the irregularities 1102 and 1112 formed on each of them are engaged with each other.
  • the surface areas of the mutually opposing surfaces can be increased.
  • the amount of radiant heat transferred from the heater 1120 to the material container 1100 via the soaking block 1110 can be increased, so that the material container 1100 can be efficiently heated.
  • a heat shielding plate 1130 is provided between the soaking block 1110 and the vacuum vessel 1400. Thereby, it is possible to suppress the heat generated in the heater 1120 from being transferred to the outside of the soaking block 1110, so that heat can be further efficiently transferred from the heater 1120 to the material container 1100 via the soaking block 1110. Heat can be transferred.
  • the example in which the unevenness is formed on the surfaces of the material container 1100 and the soaking block 1110 that face each other is not limited to this.
  • irregularities can be formed on the mutually opposing surfaces of the transport pipe 1200 and the soaking block 1210, and irregularities can be formed on the mutually opposing surfaces of the vapor deposition head 1300 and the soaking block 1310.
  • Organic materials placed under low pressure are also generally low heat conductors, so the inner surface of the material container is provided with fins or partitions to increase the contact area with the organic material (reduce the heat transfer distance between material grains). As a result, the temperature uniformity in the charged material is improved, and a stable evaporation amount can be obtained.
  • 10-4 and 10-5 are diagrams showing a modification of the material container.
  • the material container 1100 includes a partition plate 1104 that partitions the space 1106 for storing the vapor deposition material of the material container 1100 into a lattice shape.
  • the partition plate 1104 By providing the partition plate 1104, the space 1106 is partitioned into a plurality of small spaces.
  • the partition plate 1104 is heated by the heat from the heater 1120 in the same manner as the material container 1100.
  • the vapor deposition material is heated not only by the heat from the bottom and side surfaces of the material container 1100 but also by the heat from the partition plate 1104 in the material container 1100.
  • the contact area with the vapor deposition material can be increased, so that the heat uniformity in the vapor deposition material is improved, and a stable evaporation amount can be obtained.
  • the material container 1100 may have a partition plate 1108 that partitions the space 1106 for storing the vapor deposition material of the material container 1100 into a circular shape.
  • the partition plate 1108 By providing the partition plate 1108, the space 1106 is partitioned into a plurality of small spaces.
  • the partition plate 1108 is heated by the heat from the heater 1120 in the same manner as the material container 1100.
  • the vapor deposition material is heated not only by heat from the bottom and side surfaces of the material container 1100 but also by heat from the partition plate 1108.
  • the contact area with the vapor deposition material can be increased, so that the heat uniformity in the vapor deposition material is improved and a stable evaporation amount can be obtained.
  • Organic materials have excellent degassing characteristics because they tend to deteriorate at high temperatures when moisture, oxygen, etc. are present. That is, the method of roughening the surface roughness, the one having many surface areas (bubbles) in the film such as thermal spraying are not good in terms of characteristics.
  • Some organic materials require heating at about 400 ° C., and surface treatment without heat resistance deterioration is required even in that temperature range.
  • a stable material that does not easily affect the organic material is desired.
  • heat-resistant Ni-based plating satisfying the above conditions is selected, and its emissivity is high emissivity (> ⁇ 0.8) for the fins facing the inner surface of the soaking block, the outer surface of the transport path, and the material container,
  • the outer surface of the block has a low emissivity ( ⁇ 0.2).
  • the transportation path ⁇ material container (material) is the basic temperature setting. However, if the temperature of the transportation path is greatly increased, the risk of material deterioration increases and the temperature is reversed. Then, the organic material evaporated on the transportation route is re-adhered, which causes problems such as evaporation rate stability and deposition. Therefore, it is important that the temperature of the material container and the transportation path can be controlled independently. In addition, as a balance between material usage efficiency and transportation depot problem, the temperature of the transportation path is first raised to the set value when starting up the device, and the temperature is lowered from the set temperature in order to suppress the evaporation of only the container. Keep it.
  • the container temperature is first lowered below the material evaporation temperature, and then the transportation path temperature is lowered. If this can be done, wasteful material waste can be suppressed, and there is no depot to the container (easy maintenance after release from falling).
  • the heat medium is liquid here, the heat exchange efficiency is high, but it becomes high-pressure steam to ensure safety.
  • a gas was selected because of the cost increase in the circuit configuration.
  • FIG. 10-6 is a diagram illustrating a modification of the material container.
  • the temperatures of the material container 1100 and the transport pipe 1200 can be controlled independently. Therefore, it is also conceivable to separately control the heater 1120 for heating the material container 1100 and the heater 1220 for heating the transport pipe 1200 separately. In this case, the on / off control timing of the heater 1120 and the heater 1220 may be complicated.
  • a heat dissipation channel 1114 through which a heat dissipation medium can flow can be formed in the soaking block 1110 covering the material container 1100.
  • the temperature control of the material container 1100 and the transport pipe 1200 can be performed independently while simultaneously controlling the heater 1120 and the heater 1220 on and off.
  • the heater 1120 and the heater 1220 are simultaneously controlled to be turned off, and the heat radiation medium is passed through the heat radiation channel 1114.
  • the heat of the material container 1100 is taken away by the heat dissipation medium via the soaking block 1110, so that the temperature of the material container 1100 can be lowered before the transport pipe 1200.
  • the heat radiation channel 1114 is formed in the soaking block 1110, it is desirable to reduce the thermal resistance of the heat channel from the material container 1100 to the transport pipe 1200. That is, when the material container 1100 of FIG. 10-3 is a comparison target, the volume of the heat flow path 1105 from the material container 1100 to the transport pipe 1200 is relatively large in the comparison target material container 1100. For this reason, in the comparative example, since the thermal resistance between the material container 1100 and the transport pipe 1200 is small, heat is relatively easily transferred between the material container 1100 and the transport pipe 1200. As a result, in the comparative example, it is difficult to lower the temperature of the material container 1100 before the temperature of the transport pipe 1200, for example, when the temperature is lowered.
  • the volume of the heat flow path 1107 between the material container 1100 and the transport pipe 1200 is reduced.
  • the thermal resistance between the material container 1100 and the transport piping 1200 can be increased, the movement of heat between the material container 1100 and the transport piping 1200 can be relatively suppressed.
  • the temperature of the material container 1100 can be lowered before the temperature of the transport pipe 1200 by allowing the heat dissipation medium to flow through the heat dissipation channel 1114 when the temperature falls, for example.
  • the temperature control block (Cu member) can be controlled by a heater with a contact monitor (thermocouple, etc.).
  • the temperature of the transportation path (& material container) will be almost the same as the soaking block temperature after a long time, but the temperature will be greatly different when raising and lowering the temperature.
  • Provide a thermocouple thermocouple.
  • T.W. A structure (spring or the like) that presses the C tip against the measurement part is desirable.
  • FIG. 10-7 is a diagram showing an outline of the configuration of temperature measurement in the transport pipe. As shown in FIG. 10-7, a temperature monitor 1206 for measuring the temperature of the transport pipe 1200 and a temperature monitor 1216 for measuring the temperature of the soaking block 1210 are provided separately.
  • the temperature monitor 1206 for measuring the temperature of the transport pipe 1200 is pressed toward the transport pipe 1200 by the spring force of the spring 1208 from the outside of the soaking block 1210. As a result, the tip of the temperature monitor 1206 is pressed against the transport pipe 1200. As a result, the temperature monitor 1206 can measure the temperature of the transport pipe 1200 more precisely.
  • the temperature monitor 1216 for measuring the temperature of the soaking block 1210 is pressed from the outside of the soaking block 1210 toward the soaking block 1210 by the spring force of the spring 1218. Thereby, the tip of the temperature monitor 1216 is pressed against the soaking block 1210. As a result, the temperature monitor 1216 can measure the temperature of the soaking block 1210 more precisely.
  • composition of heat equalization block and transport path When a member with poor heat conduction is used in the transport path, different independent temperature control is possible in each part, but if the contact state with the heat equalization block is not controlled, individual heat equalization block Since temperature distribution occurs in the transport path even within the zone, it is possible to set the temperature uniformity within the soaking block and the independent temperature between soaking blocks by providing a fixed interval between the transport path and the soaking block.
  • the configuration of the soaking block and transport path and the surface treatment method are basically the same as those described above. (The parts that do not require high temperature control performance unlike the material container part are omitted in the fin shape.)
  • the heating part (evaporation head surface, etc.) facing the substrate transfers radiant heat from the mask to the substrate, but the heat transfer is minimized. It is important to suppress. When the temperature of the mask and the substrate rises during the film formation, displacement due to the difference in linear expansion occurs, so that fine deposition becomes difficult.
  • the vapor deposition head side generates heat flow and temperature distribution due to heat radiation, and temperature controllability is reduced. Problems such as deposits on the nozzle also occur.
  • Heat shield plate A reflector (a member having a low surface emissivity) is provided between them, and the opening area is minimized within a range that does not block vapor deposition. (For example, if the number of nozzle holes is small and large, the area is open, and if the number of holes is relatively large, only the hole is opened, etc.) There is a need to avoid mirror finish. (2) Instead of (1), a partition plate whose temperature is controlled by water cooling is provided to minimize the opening area.
  • a partition plate that prevents organic evaporant from entering the chamber partition wall around the vapor deposition head is constructed. To do.
  • 10-8 and 10-9 are diagrams showing an outline of the configuration of the vapor deposition head.
  • 10-8 is a plan view of the vapor deposition head 1300 and components around the vapor deposition head 1300
  • FIG. 10-9 is a longitudinal sectional view of the vapor deposition head 1300 and components around the vapor deposition head 1300.
  • the vapor deposition head 1300 is covered with a soaking block 1310.
  • a heater 1320 is embedded inside the soaking block 1310.
  • the vapor deposition head 1300 is made of, for example, SUS.
  • the soaking block 1310 is made of Cu, for example.
  • the soaking block 1310 is formed by fixing a plurality of soaking block members with bolts 1312. Heat generated by the heater 1320 is transferred to the vapor deposition head 1300 through the soaking block 1310.
  • a heat shielding plate 1330 is provided between the soaking block 1310 and the vacuum vessel 1400.
  • the heat shielding plate 1330 it is possible to suppress the heat generated in the heater 1320 from being transferred to the outside of the soaking block 1310. Therefore, the vapor deposition head is further passed from the heater 1320 through the soaking block 1310. Heat can be efficiently transferred to 1300.
  • heat shielding plates 1330-1 and 1330-2 are provided between the vapor deposition head 1300 and the substrate 1500. More specifically, the heat shielding plates 1330-1 and 1330-2 are provided to face the ejection surface 1304 including the ejection port 1302 that ejects a gas containing vapor of the vapor deposition material of the vapor deposition head 1300, and shields heat. To do.
  • the heat shielding plates 1330-1 and 1330-2 have an opening 1332 in a gas injection path 1306 containing vapor of vapor deposition material injected from the injection port 1302. The vapor deposition material gas ejected from the ejection port 1302 passes through the openings 1332 of the heat shielding plates 1330-1 and 1330-2 and is deposited on the substrate 1500.
  • the temperature of the vapor deposition head set at a higher temperature than other vapor deposition heads can be controlled by a heater, but the vapor deposition head on the low temperature side receives radiation heat from the vapor deposition head on the high temperature side, and the temperature rises from the set value, making control difficult. .
  • a partition plate whose temperature is controlled to be equal to or lower than the low temperature deposition head set temperature between the deposition heads having different set temperatures.
  • a water-cooled SUS plate is used.
  • both the high-temperature side vapor deposition head and the low-temperature side vapor deposition head have only temperature control on the heating side, and predetermined temperature control is possible only by heater control. It becomes.
  • the heater efficiency is higher when the surface emissivity of the partition plate is lower in the range where the deposit is difficult to peel off.
  • FIG. 10-10 is a diagram showing an outline of the configuration of the Post-Mix deposition head.
  • the vapor deposition head 1300 includes a host head 1300-1 for injecting a host gas containing vapor of the host vapor deposition material and a dopant head 1300-2 for injecting a dopant gas containing vapor of the dopant vapor deposition material. And have.
  • the host gas containing the vapor of the host vapor deposition material is transported to the host head 1300-1 via the transport pipe 1200-1.
  • the host head 1300-1 injects the host gas transported through the transport pipe 1200-1.
  • the host gas is heated to a higher sound (for example, about 380 ° C.) than the dopant gas and is transported to the host head 1300-1.
  • a dopant gas containing a vapor of a dopant vapor deposition material is transported to the dopant head 1300-2 via a transport pipe 1200-2.
  • the dopant head 1300-2 injects the dopant gas transported through the transport pipe 1200-2.
  • the host gas and the dopant gas ejected from the host head 1300-1 and the dopant head 1300-2 are deposited on the substrate 1500 in a mixed state after being ejected from each head.
  • the dopant gas is heated to a lower temperature (for example, about 230 ° C.) than the host gas and transported by the dopant head 1300-2.
  • a low temperature member 1340 controlled to a temperature lower than the temperature of the dopant head 1300-2 is provided between the host head 1300-1 and the dopant head 1300-2.
  • the low temperature member 1340 is formed, for example, so that a cooling medium (for example, water) can flow therethrough.
  • a cooling medium for example, water
  • both the host head 1300-1 and the dopant head 1300-2 can adjust the temperature only by temperature control on the heating side. It can be carried out.
  • transport pipe (common transport pipe), V101, V201, V301, V401 ... valve, S ... substrate, 1000 ... Film forming apparatus, 1100 ... Material container, 1110, 1210, 1310 ... Soaking block, 1114 ... Heat radiation channel, 1120, 1220, 1320 ... Heater 1130, 1230, 1330 ... heat shielding plate, 1200 ... transport piping, 1202 ... projection, 1206, 1216 ... temperature monitor, 1208, 1218 ... spring, 1300 ... vapor deposition head, 1300-1 ... host head, 1300-2 ... dopant head DESCRIPTION OF SYMBOLS 1302 ... Injection port, 1304 ... Injection surface, 1306 ... Injection path, 1340 ... Low temperature member, 1400 ... Vacuum container, 1500 ... Substrate.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un appareil de formation de film (1000) qui comporte : un récipient de matière (1100) dans lequel une matière de dépôt en phase vapeur est contenue ; un tuyau de transport (1200) pour transporter un gaz qui contient une vapeur de la matière de dépôt en phase vapeur, évaporée dans le récipient de matière (1100) ; et une tête de dépôt en phase vapeur (1300) pour projeter le gaz qui a été transporté à travers le tuyau de transport (1200) et contient la vapeur de la matière de dépôt en phase vapeur. L'appareil de formation de film (1000) comporte également un élément chauffant pour chauffer le récipient de matière (1100), le tuyau de transport (1200) et la tête de dépôt en phase vapeur (1300). De plus, le récipient de matière (1110), le tuyau de transport (1200), la tête de dépôt en phase vapeur (1300) et l'élément chauffant sont contenus dans un récipient sous vide (1400).
PCT/JP2013/053287 2012-02-14 2013-02-12 Appareil de formation de film WO2013122059A1 (fr)

Applications Claiming Priority (4)

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JP2012029528 2012-02-14
JP2012-029528 2012-02-14
JP2012-105335 2012-05-02
JP2012105335A JP2013189701A (ja) 2012-02-14 2012-05-02 成膜装置

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
WO2016070943A1 (fr) * 2014-11-07 2016-05-12 Applied Materials, Inc. Agencement de source de matière et agencement de distribution de matière pour dépôt sous vide

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Publication number Priority date Publication date Assignee Title
GB2559685B (en) * 2015-03-10 2019-06-12 Bobst Manchester Ltd Vacuum Coater For Coating A Web
CN109546008B (zh) 2017-09-22 2020-11-06 清华大学 有机发光二极管的制备方法
JP7129280B2 (ja) * 2018-08-28 2022-09-01 株式会社カネカ ガスキャリア蒸着装置

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JPH0724972U (ja) * 1993-10-08 1995-05-12 三菱重工業株式会社 真空用ヒータ
JP2002249868A (ja) * 2001-02-21 2002-09-06 Denso Corp 蒸着装置
JP2005032464A (ja) * 2003-07-08 2005-02-03 Tohoku Pioneer Corp 成膜装置、成膜方法、有機ｅｌ素子及び有機ｅｌの製造方法
WO2008117690A1 (fr) * 2007-03-26 2008-10-02 Ulvac, Inc. Source d'évaporation, appareil de dépôt de vapeur et procédé de formation de film
JP2010189739A (ja) * 2009-02-20 2010-09-02 Mitsubishi Heavy Ind Ltd 蒸発装置

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Publication number Priority date Publication date Assignee Title
JPH0724972U (ja) * 1993-10-08 1995-05-12 三菱重工業株式会社 真空用ヒータ
JP2002249868A (ja) * 2001-02-21 2002-09-06 Denso Corp 蒸着装置
JP2005032464A (ja) * 2003-07-08 2005-02-03 Tohoku Pioneer Corp 成膜装置、成膜方法、有機ｅｌ素子及び有機ｅｌの製造方法
WO2008117690A1 (fr) * 2007-03-26 2008-10-02 Ulvac, Inc. Source d'évaporation, appareil de dépôt de vapeur et procédé de formation de film
JP2010189739A (ja) * 2009-02-20 2010-09-02 Mitsubishi Heavy Ind Ltd 蒸発装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016070943A1 (fr) * 2014-11-07 2016-05-12 Applied Materials, Inc. Agencement de source de matière et agencement de distribution de matière pour dépôt sous vide
JP2017534768A (ja) * 2014-11-07 2017-11-24 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 真空堆積のための材料源アレンジメント及び材料分配アレンジメント

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