JP2013189701A - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
- Publication number
- JP2013189701A JP2013189701A JP2012105335A JP2012105335A JP2013189701A JP 2013189701 A JP2013189701 A JP 2013189701A JP 2012105335 A JP2012105335 A JP 2012105335A JP 2012105335 A JP2012105335 A JP 2012105335A JP 2013189701 A JP2013189701 A JP 2013189701A
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- soaking block
- forming apparatus
- film forming
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 282
- 238000007740 vapor deposition Methods 0.000 claims abstract description 244
- 238000002791 soaking Methods 0.000 claims abstract description 110
- 238000010438 heat treatment Methods 0.000 claims abstract description 45
- 239000002019 doping agent Substances 0.000 claims description 34
- 230000008021 deposition Effects 0.000 claims description 26
- 238000001816 cooling Methods 0.000 claims description 8
- 230000032258 transport Effects 0.000 description 209
- 239000007789 gas Substances 0.000 description 134
- 238000003860 storage Methods 0.000 description 75
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 60
- 239000010410 layer Substances 0.000 description 43
- 239000000758 substrate Substances 0.000 description 32
- 229910052786 argon Inorganic materials 0.000 description 30
- 238000005192 partition Methods 0.000 description 25
- 238000010586 diagram Methods 0.000 description 23
- 238000012545 processing Methods 0.000 description 23
- 238000012546 transfer Methods 0.000 description 23
- 238000000151 deposition Methods 0.000 description 20
- 238000005401 electroluminescence Methods 0.000 description 17
- 238000001704 evaporation Methods 0.000 description 17
- 230000008020 evaporation Effects 0.000 description 17
- 238000009413 insulation Methods 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 229910001873 dinitrogen Inorganic materials 0.000 description 16
- 230000006837 decompression Effects 0.000 description 15
- 230000005855 radiation Effects 0.000 description 15
- 239000011368 organic material Substances 0.000 description 13
- 230000006870 function Effects 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000009826 distribution Methods 0.000 description 8
- 238000003380 quartz crystal microbalance Methods 0.000 description 8
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 6
- 239000012044 organic layer Substances 0.000 description 6
- 238000004381 surface treatment Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002801 charged material Substances 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000012611 container material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012105335A JP2013189701A (ja) | 2012-02-14 | 2012-05-02 | 成膜装置 |
| TW102105330A TW201346052A (zh) | 2012-02-14 | 2013-02-08 | 成膜裝置 |
| PCT/JP2013/053287 WO2013122059A1 (fr) | 2012-02-14 | 2013-02-12 | Appareil de formation de film |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012029528 | 2012-02-14 | ||
| JP2012029528 | 2012-02-14 | ||
| JP2012105335A JP2013189701A (ja) | 2012-02-14 | 2012-05-02 | 成膜装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2013189701A true JP2013189701A (ja) | 2013-09-26 |
Family
ID=48984169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012105335A Pending JP2013189701A (ja) | 2012-02-14 | 2012-05-02 | 成膜装置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2013189701A (fr) |
| TW (1) | TW201346052A (fr) |
| WO (1) | WO2013122059A1 (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3067437A1 (fr) * | 2015-03-10 | 2016-09-14 | Bobst Manchester Limited | Coucheuse à vide améliorée |
| JP2020033581A (ja) * | 2018-08-28 | 2020-03-05 | 株式会社カネカ | ガスキャリア蒸着装置 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107078215B (zh) * | 2014-11-07 | 2020-09-22 | 应用材料公司 | 用于真空沉积的材料源配置与材料分布配置 |
| CN109546008B (zh) | 2017-09-22 | 2020-11-06 | 清华大学 | 有机发光二极管的制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2605533Y2 (ja) * | 1993-10-08 | 2000-07-24 | 三菱重工業株式会社 | 真空用ヒータ |
| JP4599727B2 (ja) * | 2001-02-21 | 2010-12-15 | 株式会社デンソー | 蒸着装置 |
| JP2005032464A (ja) * | 2003-07-08 | 2005-02-03 | Tohoku Pioneer Corp | 成膜装置、成膜方法、有機ｅｌ素子及び有機ｅｌの製造方法 |
| WO2008117690A1 (fr) * | 2007-03-26 | 2008-10-02 | Ulvac, Inc. | Source d'évaporation, appareil de dépôt de vapeur et procédé de formation de film |
| JP2010189739A (ja) * | 2009-02-20 | 2010-09-02 | Mitsubishi Heavy Ind Ltd | 蒸発装置 |
-
2012
- 2012-05-02 JP JP2012105335A patent/JP2013189701A/ja active Pending
-
2013
- 2013-02-08 TW TW102105330A patent/TW201346052A/zh unknown
- 2013-02-12 WO PCT/JP2013/053287 patent/WO2013122059A1/fr active Application Filing
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3067437A1 (fr) * | 2015-03-10 | 2016-09-14 | Bobst Manchester Limited | Coucheuse à vide améliorée |
| EP3879000A1 (fr) * | 2015-03-10 | 2021-09-15 | Bobst Manchester Limited | Bande revêtue, machine à enduire sous vide et procédés |
| JP2020033581A (ja) * | 2018-08-28 | 2020-03-05 | 株式会社カネカ | ガスキャリア蒸着装置 |
| JP7129280B2 (ja) | 2018-08-28 | 2022-09-01 | 株式会社カネカ | ガスキャリア蒸着装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201346052A (zh) | 2013-11-16 |
| WO2013122059A1 (fr) | 2013-08-22 |
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