WO2011040313A1 - Module semi-conducteur et procédé pour sa fabrication - Google Patents
Module semi-conducteur et procédé pour sa fabrication Download PDFInfo
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- WO2011040313A1 WO2011040313A1 PCT/JP2010/066454 JP2010066454W WO2011040313A1 WO 2011040313 A1 WO2011040313 A1 WO 2011040313A1 JP 2010066454 W JP2010066454 W JP 2010066454W WO 2011040313 A1 WO2011040313 A1 WO 2011040313A1
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- WIPO (PCT)
- Prior art keywords
- semiconductor module
- heat sink
- insulating substrate
- module according
- base plate
- Prior art date
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0006—Exothermic brazing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/04—Heating appliances
- B23K3/047—Heating appliances electric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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Definitions
- the present invention relates to a power semiconductor module for controlling a large current in an electric vehicle, electric railway, machine tool, and the like, and more particularly to a power semiconductor module integrated with a heat sink.
- FIG. 11 is a cross-sectional view schematically showing a conventional semiconductor module.
- the power semiconductor module 5 includes a metal base plate 50, and an insulating substrate 60 is joined to the metal base plate 50 with solder 33.
- the insulating substrate 60 has a configuration in which metal plates 62 and 63 are bonded to both surfaces of an insulating plate 61.
- the metal plate 62 is selectively provided on the insulating plate 61 as a circuit pattern.
- the semiconductor chip 40 is joined to the metal plate 62 as a circuit pattern by solder 34.
- An electrode (not shown) provided on the surface of the semiconductor chip 40 and the metal plate 62 are connected by a bonding wire 81.
- a resin case 70 in which an external connection terminal 82 that is electrically connected to an external member is insert-molded is mounted on the periphery of the metal base plate 50 so as to surround the semiconductor chip 40 and the like.
- the inside of the resin case 70 is filled with silicone gel 71 and epoxy resin 72, the semiconductor chip 40 and the like are sealed, and a lid 73 is fixed above it.
- Such a power semiconductor module 5 is fixed to a heat sink 20 prepared on the user side by means of screws or the like via a heat dissipating grease 90, and is used as a component for controlling a large current in an electric vehicle, an electric railway, a machine tool or the like.
- the heat dissipating grease 90 fills a gap generated between the power semiconductor module 5 and the heat sink 20 and has a function of suppressing the heat conduction by the air layer formed in the gap, and the heat generated in the semiconductor chip 40 is reduced. This is transmitted to the heat sink 20 (see, for example, Patent Document 1 (FIG. 7)).
- the metal base plate 50 of the power semiconductor module 5 and the heat sink 20 described above are in contact with the heat radiating grease 90.
- the metal base plate 50 is made of copper (Cu).
- the heat sink 20 is made of aluminum (Al).
- the thermal conductivities of copper and aluminum are about 390 W / (m ⁇ K) and about 220 W / (m ⁇ K), respectively.
- the thermal conductivity of the heat dissipating grease 90 is about 1.0 W / (m ⁇ K).
- the thermal conductivity of the heat dissipating grease 90 is lower than that of metals such as copper and aluminum. For this reason, between the metal base board 50 and the heat sink 20, the part of the thermal radiation grease 90 becomes a large thermal resistance.
- bonding by solder is generally used. Also known is a method of soldering using a flux.
- a method for bonding bonding materials there is disclosed a method for bonding a semiconductor device to a printed circuit board or the like using a reactive multilayer metal foil (for example, Patent Document 2 (page 22, pages 3 to 8) described below. Line)).
- wire bonding is performed in a state where the heat sink 20 is bonded to the insulating substrate 60.
- the transmission of ultrasonic waves may be incomplete, resulting in poor bonding between the silicon chip and the wire or damage to the silicon chip.
- the present invention has an object to provide a semiconductor module in which a metal base plate and a heat sink are directly joined without using a heat dissipating grease, and a method for manufacturing the same, in order to eliminate the above-described problems caused by the prior art. Moreover, it aims at providing the semiconductor module provided with the outstanding heat dissipation performance, and its manufacturing method. It is another object of the present invention to provide a semiconductor module with a reduced manufacturing cost and a manufacturing method thereof.
- a semiconductor module includes a heat sink and one of the heat sinks formed by melting or solidifying solder or plating using a reactive metal foil as a heat source. And a member including a semiconductor chip bonded to the main surface.
- the heat sink and the member including the semiconductor chip are joined together by solder or plating solidified after being instantaneously melted by the heat generated by the reactive metal foil.
- a semiconductor module according to a second aspect of the present invention is the semiconductor module according to the first aspect, wherein the member is a metal base plate, an insulating substrate joined to one main surface of the metal base plate, and the insulation. And a semiconductor chip bonded to one main surface of the substrate, wherein the heat sink is bonded to the other main surface of the metal base plate.
- the heat sink and the metal base plate of the member including the semiconductor chip are joined together by solder or plating solidified after being instantaneously melted by the heat generated by the reactive metal foil.
- a semiconductor module according to a third aspect of the present invention is the semiconductor module according to the first aspect, wherein the member includes an insulating substrate and the semiconductor chip bonded to one main surface of the insulating substrate.
- the heat sink is bonded to the other main surface of the insulating substrate.
- the heat sink and the insulating substrate of the member including the semiconductor chip are joined together by solder or plating solidified after being instantaneously melted by the heat generated by the reactive metal foil.
- the semiconductor module according to the invention of claim 4 is characterized in that, in the invention of claim 1, the reactive metal foil is a laminated film in which nickel and aluminum are alternately laminated.
- the reactive metal foil in which nickel and aluminum are alternately laminated acts as a heat source for melting solder or plating.
- the semiconductor module according to the invention of claim 5 is characterized in that, in the invention of claim 4, the reactive metal foil is a laminated film laminated by a physical vapor deposition method.
- the semiconductor module according to the invention of claim 6 is characterized in that, in the invention of claim 4, the thickness of the reactive metal foil is 0.05 mm or more and 0.1 mm or less.
- the reactive metal foil having a thickness of 0.05 mm or more and 0.1 mm or less acts as a heat source for melting the solder or plating, and joins the heat sink and the member including the semiconductor chip. A bonding layer is formed.
- the semiconductor module according to the second aspect wherein the insulating substrate includes an insulating plate and metal plates respectively bonded to both surfaces of the insulating plate. To do.
- the semiconductor module according to the invention of claim 8 is characterized in that, in the invention of claim 7, the thickness of the insulating plate is 0.2 mm or more and 1.0 mm or less.
- the semiconductor module according to the invention of claim 9 is characterized in that, in the invention of claim 7, the insulating plate is alumina, alumina, silicon nitride or aluminum nitride to which alumina or zirconia is added.
- the insulating substrate includes an insulating plate and metal plates respectively bonded to both surfaces of the insulating plate. To do.
- the semiconductor module according to the invention of claim 11 is characterized in that, in the invention of claim 10, the thickness of the insulating plate is 0.2 mm or more and 1.0 mm or less.
- the semiconductor module according to a twelfth aspect of the invention is characterized in that, in the invention according to the tenth aspect, the insulating plate is alumina, silicon nitride or aluminum nitride to which alumina or zirconia is added.
- a semiconductor module according to a thirteenth aspect of the present invention is the semiconductor module according to any one of the seventh to twelfth aspects, wherein the metal plate is copper, a copper alloy, aluminum, or an aluminum alloy. .
- the semiconductor module according to claim 14 is the semiconductor module according to claim 1, wherein the heat sink is copper, copper alloy, aluminum, aluminum alloy, copper-molybdenum, or aluminum-silicon carbide. To do.
- the semiconductor module according to the invention of claim 15 is characterized in that, in the invention of claim 14, the surface of the heat sink is subjected to nickel plating, gold plating or tin plating.
- the metal base plate is made of copper, copper alloy, aluminum, aluminum alloy, copper-molybdenum alloy, iron or iron alloy. It is characterized by.
- the semiconductor module according to the invention of claim 17 is characterized in that, in the invention of claim 16, the surface of the metal base plate is subjected to nickel plating, gold plating or tin plating.
- the semiconductor chip and the insulating substrate, and the insulating substrate and the metal base plate are respectively joined by solder. .
- the semiconductor module according to the invention of claim 19 is characterized in that, in the invention of claim 3, the semiconductor chip and the insulating substrate are joined by solder.
- the semiconductor module according to claim 20 is the semiconductor module according to claim 18 or 19, wherein the solder for joining the insulating substrate and another member is melted and solidified using a reactive metal foil as a heat source. It is characterized by being solder.
- the semiconductor module according to claim 21 is the semiconductor module according to claim 18 or 19, wherein the main component of the solder is tin-lead alloy, tin-silver alloy, tin-bismuth alloy, tin-antimony alloy. And a tin-copper alloy or a tin-indium alloy.
- a semiconductor module manufacturing method includes a first step of bonding a semiconductor chip to one main surface of an insulating substrate. After the second step of bonding a wire or a lead frame to the semiconductor chip, and after the first step and the second step, the solder or plating is melted and solidified using a reactive metal foil as a heat source, and the insulation is performed. And a third step of bonding a heat sink to the other main surface side of the substrate.
- the heat sink is formed on the other main surface side of the insulating substrate in the third step. Can be joined.
- a method for manufacturing a semiconductor module according to the twenty-second aspect of the present invention wherein, in the first step, a metal base plate is joined to the other main surface of the insulating substrate. In step 3, the heat sink is bonded to the metal base plate.
- the metal base plate is bonded to the insulating substrate.
- the insulating substrate is bonded to the heat sink through the metal base plate by solder or plating melted using the reactive metal foil as a heat source.
- the semiconductor module manufacturing method according to the invention of claim 24 is characterized in that, in the invention of claim 22, in the third step, the heat sink is joined to the insulating substrate.
- the insulating substrate is directly joined to the heat sink by molten solder or plating using the reactive metal foil as a heat source.
- a reactive metal foil that itself becomes a heat source is used for joining the heat sink and the member including the semiconductor chip.
- the heat sink and the member including the semiconductor chip can be bonded instantaneously at room temperature without heating from the outside.
- the heat sink and the member including the semiconductor chip are joined by solder or plating solidified after being melted using the reactive metal foil as a heat source.
- the thermal resistance between the heat sink and the member including the semiconductor chip can be reduced. For this reason, the heat sink integrated power semiconductor module excellent in heat dissipation can be provided efficiently.
- yield rate It is possible to provide a method for manufacturing a power semiconductor module with a high heat sink.
- the semiconductor module and the manufacturing method thereof according to the present invention there is an effect that the metal base plate and the heat sink can be directly joined without using the heat radiating grease. Moreover, there exists an effect that heat dissipation performance can be improved. Moreover, there exists an effect that cost can be reduced.
- FIG. 1 is a cross-sectional view schematically showing a main part of the semiconductor module according to the first embodiment.
- FIG. 2 is a flowchart of the semiconductor module manufacturing method according to the first embodiment.
- FIG. 3 is a cross-sectional view schematically showing a main part of the semiconductor module according to the second embodiment.
- FIG. 4 is a cross-sectional view schematically showing a main part of the semiconductor module according to the third embodiment.
- FIG. 5 is a cross-sectional view schematically showing a main part of the semiconductor module according to the fourth embodiment.
- FIG. 6 is an explanatory diagram showing the relationship between solder thickness, bondability, and protrusion.
- FIG. 7 is a cross-sectional view schematically showing a state where the insulating substrate and the metal base plate are warped.
- FIG. 8 is a characteristic diagram showing the relationship between the thickness of the insulating substrate and the amount of gap between the metal base plate and the heat sink.
- FIG. 9 is a characteristic diagram showing the relationship between the amount of the gap between the metal base plate and the heat sink and the thickness of the solder.
- FIG. 10 is a characteristic diagram showing the relationship between heat sink thermal conductivity and thermal resistance.
- FIG. 11 is a cross-sectional view schematically showing a conventional semiconductor module.
- the best mode for carrying out the present invention is to use the reactive metal foil as a heat source in a state where the reactive metal foil and the solder plate are inserted between the semiconductor device and the heat sink after the electrical property test is completed. It is to solidify after melting a solder plate by igniting, for example, instantly joining at room temperature.
- the electrical characteristic test is performed on a semiconductor device in which at least an electrode provided on the surface of the semiconductor chip and a circuit pattern formed on the insulating substrate are connected by a bonding wire.
- FIG. 1 is a cross-sectional view schematically showing a main part of the semiconductor module according to the first embodiment.
- the heat sink integrated power semiconductor module 1 according to the first embodiment mainly includes a semiconductor device 10 and a heat sink 20.
- the semiconductor device 10 is a member including the semiconductor chip 40.
- the semiconductor device 10 is joined to one main surface of the heat sink 20 by solders 31 and 32 that are solidified after being melted using the reactive metal foil 30 as a heat source.
- the reactive metal foil 30 is a metal foil that self-ignites when a stimulus is applied, for example, by passing an electric current.
- the semiconductor device 10 and the heat sink 20 are joined as follows.
- the semiconductor device 10 includes a semiconductor chip 40, an insulating substrate 60, and a metal base plate 50.
- the semiconductor chip 40 is bonded to one main surface of the insulating substrate 60 by solder 34.
- the insulating substrate 60 has a configuration in which metal plates 62 and 63 are bonded to both surfaces of the insulating plate 61.
- the metal plate 62 is selectively provided on the insulating plate 61 as a circuit pattern.
- the semiconductor chip 40 is joined to a metal plate 62 as a circuit pattern by solder 34.
- the insulating substrate 60 is joined to one main surface of the metal base plate 50 by solder 33.
- the metal plate 63 bonded to the other main surface of the insulating substrate 60 is bonded to the metal base plate 50 by the solder 33.
- the heat sink 20 is bonded to the main surface (the other main surface) of the metal base plate 50 opposite to the main surface (one main surface) to which the insulating substrate 60 is bonded by solders 31 and 32. .
- a reactive metal foil 30 is sandwiched between the solder 31 and the solder 32 as a heat source for the solders 31 and 32.
- the power semiconductor module 1 including the semiconductor device 10 and the heat sink 20 includes the heat sink 20, the solder 31, the reactive metal foil 30, the solder 32, the metal base plate 50, the solder 33, the insulating substrate 60 (the metal plate 63) from the heat sink 20 side.
- the insulating plate 61 and the metal plate 62 are joined in this order), the solder 34 and the semiconductor chip 40 are joined in this order.
- the power semiconductor module 1 is electrically connected to an external member and a bonding wire 81 that electrically connects an electrode (not shown) provided on the surface of the semiconductor chip 40 and a metal plate (circuit pattern) 62.
- a resin case 70 that surrounds the external connection terminal 82, the semiconductor chip 40, etc. and is fixed to the periphery of the metal base plate 50, a silicone gel 71 filled in the resin case 70, and an upper portion of the silicone gel 71
- the epoxy resin 72 and the lid 73 are provided.
- the metal plate 62 and the external connection terminal 82 are connected by a bonding wire 81.
- a silicone gel 71 Inside the resin case 70, the semiconductor chip 40, the metal plate 62, the bonding wire 81, and the like are sealed with a silicone gel 71.
- the epoxy resin 72 covers the silicone gel 71. Further, the end portion of the epoxy resin 72 is in contact with the resin case 70.
- the lid 73 is provided on the silicone gel 71 and the epoxy resin 72 and fixes the silicone gel 71 and the epoxy resin 72.
- the cross-sectional shape of the resin case 70 may be, for example, an L shape.
- the cross-sectional shape of the external connection terminal 82 may be L-shaped, for example.
- the semiconductor chip 40 includes an IGBT (Insulated Gate Bipolar Transistor) and an FWD (Free Wheeling Diode) that circulates an induced current generated when the IGBT chip is turned off. Etc. may be formed.
- IGBT Insulated Gate Bipolar Transistor
- FWD Free Wheeling Diode
- the insulating substrate 60 is configured, for example, by bonding the metal plates 62 and 63 to the main surface of the ceramic insulating plate 61 on the semiconductor chip 40 side and the main surface (both surfaces) of the metal base plate 50, respectively. ing.
- the insulating substrate 60 is a DCB (Direct Copper Bonding) substrate.
- the metal plate 62 formed on one main surface of the insulating plate 61 is subjected to circuit pattern processing.
- the thickness of the insulating substrate 60 is 0.6 mm or more and 2.0 mm or less.
- the material of the insulating plate 61 is various ceramics, preferably alumina (Al 2 O 3 ), alumina to which zirconia (ZrO 2 ) is added, silicon nitride (Si 3 N 4 ), or aluminum nitride (AlN).
- the thickness of the insulating plate 61 is not less than 0.2 mm and not more than 1.0 mm, preferably not less than 0.2 mm and not more than 0.6 mm.
- the metal plates 62 and 63 may be copper, a copper alloy, aluminum, or an aluminum alloy.
- the metal base plate 50 is made of copper, copper alloy, pure aluminum, aluminum alloy, copper-molybdenum (Mo) alloy, pure iron (Fe), or iron alloy. Further, the surface of the metal base plate 50 is preferably subjected to nickel (Ni) plating, gold (Au) plating, or tin (Sn) plating.
- the heat sink 20 is made of, for example, copper, copper alloy, aluminum, aluminum alloy, copper-molybdenum, or aluminum-silicon carbide (SiC). Furthermore, the surface of the heat sink 20 is preferably subjected to nickel plating, gold plating or tin plating.
- the heat sink 20 may include fins (not shown) having a shape that increases the surface area of the heat sink 20. The shape of the fin may be any shape such as a plate shape, a wave shape, and a culgate.
- Solder 31, 32, 33, 34 are tin-lead (Pb) alloy, tin-silver (Ag) alloy, tin-bismuth (Bi) alloy, tin-antimony (Sb) alloy, tin-copper alloy, tin-indium (In)
- Pb tin-lead
- the solders 31 and 32 that join the semiconductor device 10 and the heat sink 20 are preferably Sn—Sb alloys.
- the thickness of the solders 31 and 32 is preferably 0.2 mm or more and 0.5 mm or less. The reason will be described later.
- the reactive metal foil 30 is a laminated film in which nickel layers and aluminum layers are alternately laminated by a physical vapor deposition method (PVD: Physical Vapor Deposition) such as vacuum vapor deposition or sputtering.
- PVD Physical Vapor Deposition
- a metal foil provided by Reactive Nano Technologies, Inc. under the trade name NanoFoil (registered trademark) may be used.
- the thickness of the reactive metal foil 30 is preferably 0.05 mm or more and 0.1 mm or less.
- the solders 31 and 32 are instantaneously melted by the reactive metal foil 30 that self-ignites.
- the melted solder 31 is solidified at the interface between the heat sink 20 and the solder 31 so that the heat sink 20 is metal-bonded and integrated.
- the melted solder 32 is solidified to be metal-bonded and integrated with the metal base plate 50.
- the heat sink 20 and the metal base plate 50 are joined by a three-layer joining layer of the solder 31, the reactive metal foil 30, and the solder 32.
- the reactive metal foil 30 that has acted as a heat source becomes an aluminum-nickel alloy bonding layer, for example, when it is a laminate of a nickel film and an aluminum film.
- FIG. 2 is a flowchart of the method for manufacturing the power semiconductor module according to the first embodiment.
- the main surface on the metal plate 63 side (the other main surface) of the insulating substrate 60 composed of the insulating plate 61 and the metal plates 62 and 63 is joined to one main surface of the metal base plate 50 by the solder 33.
- the semiconductor chip 40 is joined to the metal plate 62 on one main surface of the insulating substrate 60 by the solder 34 (step S1).
- joining (fixing) of the metal base plate 50 and the semiconductor chip 40 with the solders 33 and 34 is performed simultaneously. That is, the solder 33, the insulating substrate 60, the solder 34, and the semiconductor chip 40 are stacked in this order on the upper surface of the metal base plate 50, and these are heated in an atmosphere reduced with nitrogen (N 2 ) or hydrogen (H 2 ) gas. To do. When the solders 33 and 34 are melted, evacuation is performed to remove bubbles remaining in the solder layer. Then, after a predetermined time, the stacked members are cooled to resolidify the solders 33 and 34. As a result, the metal base plate 50, the insulating substrate 60, and the semiconductor chip 40 are joined in a state of overlapping in this order.
- N 2 nitrogen
- H 2 hydrogen
- step S2 the resin case 70 and the metal base plate 50 are bonded (step S2). Specifically, the resin case 70 (envelope) in which the external connection terminals 82 are insert-molded or outsert-molded is fitted and fixed to the periphery of the metal base plate 50 using an adhesive.
- the surface electrode, the metal plate 62 and the external connection terminal 82 formed on the semiconductor chip 40 are electrically connected by the bonding wire 81 or the lead frame.
- other electrodes are electrically connected to form a predetermined circuit.
- the emitter electrode, the collector electrode, and the gate electrode are electrically connected to form a predetermined circuit.
- the silicone gel 71 is filled in the resin case 70. Then, the upper part of the silicone gel 71 is covered with an epoxy resin 72. Further, a lid 73 is provided on the silicone gel 71 and the epoxy resin 72 to fix the silicone gel 71 and the epoxy resin 72 (step S3).
- step S4 the electrical characteristics and the operation characteristics test of the circuit configured in the semiconductor device 10 are performed as necessary.
- the heat sink 20 is prepared, and the solder 31, the reactive metal foil 30 and the solder 32 are stacked in this order on one main surface of the heat sink 20, and the metal base plate 50 of the semiconductor device 10 is placed on the solder 32.
- the semiconductor devices 10 are stacked so that the other main surface is on the heat sink 20 side.
- the stacked members are pressed from the semiconductor device 10 side and the heat sink 20 side so that pressure is uniformly applied to the entire solders 31 and 32.
- an electric current is passed through the reactive metal foil 30 to cause irritation and self-ignition, thereby melting the solders 31 and 32.
- the metal base plate 50 of the semiconductor device 10 is joined to the heat sink 20 on the other main surface side of the insulating substrate 60, and the heat semiconductor integrated power semiconductor module 1 is completed (step S5).
- the reactive metal foil 30 that itself becomes a heat source is used for joining the heat sink 20 and the semiconductor device 10.
- the heat sink 20 and the semiconductor device 10 can be instantaneously bonded at room temperature without heating from the outside.
- the heat sink 20 and the semiconductor device 10 are joined by the solders 31 and 32 that are solidified after being melted using the reactive metal foil 30 as a heat source.
- the thermal resistance between the heat sink 20 and the semiconductor device 10 can be reduced. For this reason, the heat semiconductor integrated power semiconductor module 1 excellent in heat dissipation can be provided efficiently.
- the reactive metal foil 30 it is possible to join only the non-defective product to the heat sink 20 after selecting the plurality of semiconductor devices 10 by the electrical characteristic test. Therefore, it is possible to provide the heat semiconductor integrated power semiconductor module 1 with a high non-defective rate and excellent heat dissipation.
- a process of joining the heat sink 20 and the semiconductor device 10 using the reactive metal foil 30 that itself becomes a heat source is performed separately from this process. For this reason, it is not necessary to heat the entire heat sink 20 from the outside for bonding, and the manufacturing process can be simplified and made more efficient. Further, since no grease or the like is used, a method for manufacturing the heat semiconductor integrated power semiconductor module 1 with excellent heat dissipation can be provided. Furthermore, after performing the process of testing the electrical characteristics of the semiconductor device 10, a process for bonding using the reactive metal foil 30 is performed, thereby providing a method for manufacturing a power semiconductor integrated power semiconductor module with a high yield rate. can do.
- FIG. 3 is a cross-sectional view schematically showing a main part of the semiconductor module according to the second embodiment.
- a power semiconductor module 2 according to the second embodiment is a modification of the first embodiment.
- platings 35 and 36 respectively applied to the opposing surfaces of the heat sink 20 and the metal base plate 50 may be used as a bonding material.
- plating 36 is applied to the main surface (other main surface) of the metal base plate 50 on the side where the heat sink 20 is joined.
- the main surface (one main surface) of the heat sink 20 on the side to which the metal base plate 50 is joined is plated 35.
- a reactive metal foil 30 serving as a heat source for the platings 35 and 36 is sandwiched between the surface of the metal base plate 50 that is plated 36 and the surface of the heat sink 20 that is plated 35. That is, no solder is sandwiched between the metal base plate 50 and the heat sink 20.
- the reactive metal foil 30 as a heat source, the metal base plate 50 and the heat sink 20 are bonded together by a bonding layer that solidifies after the platings 35 and 36 are melted.
- the platings 35 and 36 are preferably platings mainly composed of tin. The reason is that the tin plating itself is melted by the ignition and heat generation of the reactive metal foil 30 and becomes a bonding material for bonding the heat sink 20 and the metal base plate 50.
- the platings 35 and 36 may be nickel plating or the like. In this case, solder is required as a bonding material in addition to the reactive metal foil 30.
- the thickness of the platings 35 and 36 may be such that the heat sink 20 and the metal base plate 50 can be joined, and preferably 0.005 mm or more and 0.05 mm or less. Other configurations and manufacturing methods are the same as those in the first embodiment.
- the platings 35 and 36 are thinner than the solders 31 and 32, and the metal base plate 50 may warp when the semiconductor device 11 and the heat sink 20 are joined using the platings 35 and 36. For this reason, when joining the semiconductor device 11 and the heat sink 20 using the plating 35 and 36, it is desirable that the gap between the metal base plate 50 and the heat sink 20 is as small as possible. Therefore, after the assembly of the semiconductor device 11 is completed (see step S3 in FIG. 2), the metal base plate 50 is flattened before the semiconductor device 11 and the heat sink 20 are joined (see step S5 in FIG. 2). Is preferred. Furthermore, in order to reduce the gap between the metal base plate 50 and the heat sink 20, it is particularly preferable that the planar size of the metal base plate 50 is 70 mm ⁇ 70 mm or less.
- FIG. 4 is a cross-sectional view schematically showing a main part of the semiconductor module according to the third embodiment.
- the power semiconductor module 3 according to the third embodiment is a modification of the first embodiment.
- the insulating substrate 60 and the heat sink 20 may be directly joined without using the metal base plate 50.
- the semiconductor device 12 does not include the metal base plate 50.
- the solder which uses the reactive metal foil 30 as a heat source is provided on the main surface (the other main surface) opposite to the main surface (one main surface) to which the semiconductor chip 40 is bonded.
- the heat sink 20 is joined via 31 and 32.
- Other configurations are the same as those in the first embodiment.
- step S1 the joining of the metal base plate 50 and the insulating substrate 60 is omitted in step S1 of the first embodiment (step S1 '). That is, in step S ⁇ b> 1 ′, only the semiconductor chip 40 and the insulating substrate 60 are bonded.
- step S2 the resin case 70 is fitted and fixed to the periphery of the insulating substrate 60 using an adhesive (step S2 ').
- step S ⁇ b> 5 the solder 31, the reactive metal foil 30 and the solder 32 are stacked in this order on one main surface of the heat sink 20, and the other main surface of the insulating substrate 60 of the semiconductor device 12 is placed on the solder 32.
- the semiconductor device 12 is overlaid so that is on the heat sink 20 side.
- these stacked members are pressurized from, for example, the semiconductor device 12 side and the heat sink 20 side (step S5 ').
- the other manufacturing methods are the same as those in the first embodiment.
- the same effect as in the first embodiment can be obtained.
- the thermal resistance between the semiconductor chip 40 and the heat sink 20 can be reduced.
- the metal base plate 50 it is possible to avoid warping that occurs in the semiconductor device when the metal base plate 50 and the insulating substrate 60 are joined.
- the insulating substrate 60 is cracked as compared with a case where grease is sandwiched between the insulating substrate 60 and the heat sink 20 and fixed by screwing. In addition, cracking can be prevented.
- plating may be used as a bonding material.
- tin plating is applied to the surface of the metal plate 63 of the insulating substrate 60 and one main surface of the heat sink 20, and the semiconductor device 12 and the heat sink 20 are bonded using tin plating as a bonding material.
- the metal base plate 50 since the metal base plate 50 is not used, the bottom surface of the insulating substrate 60 is flat. For this reason, the semiconductor device 12 and the heat sink 20 can be joined without performing the flat processing of the insulating substrate 60.
- FIG. 5 is a cross-sectional view schematically showing a main part of the semiconductor module according to the fourth embodiment.
- the power semiconductor module 4 according to the fourth embodiment is a modification of the third embodiment.
- the insulating substrate 60 and the semiconductor chip 40 may be joined by solder solidified after being melted using the reactive metal foil 30 as a heat source.
- the insulating substrate 60 and the semiconductor chip 40 are joined by the reactive metal foil 130 that is a heat source of the solder 131 and 132 and the solder 131 and 132.
- the configuration and conditions of the reactive metal foil 130 and the solders 131 and 132 that join the insulating substrate 60 and the semiconductor chip 40 are the same as the reactive metal foil 30 and the solders 31 and 32 that join the insulating substrate 60 and the heat sink 20. is there.
- the power semiconductor module 4 is stacked from the heat sink 20 side in the order of the heat sink 20, solder 31, reactive metal foil 30, solder 32, insulating substrate 60, solder 131, reactive metal foil 130, solder 132, and semiconductor chip 40. Are joined together.
- Other configurations are the same as those in the third embodiment.
- the solder 131, the reactive metal foil 130, the solder 132, and the semiconductor chip 40 are stacked on one main surface of the insulating substrate 60. Then, these stacked members are pressurized from, for example, the semiconductor chip 40 side. In this state, the reactive metal foil 130 is stimulated to self-ignite, and after the solders 131 and 132 are melted and solidified, the insulating substrate 60 and the semiconductor chip 40 are joined (step S1 ′′). The insulating substrate 60 and the semiconductor chip 40 are joined by the solders 131 and 132. Other conditions and the manufacturing method are the same as those in the third embodiment.
- the same effect as in the third embodiment can be obtained. Further, the reflow process can be omitted in the method for manufacturing the power semiconductor module 4 by bonding the insulating substrate 60 and the semiconductor chip 40 using the reactive metal foil 130.
- Example 1 The preferred range of the thicknesses of the solders 31 and 32 for joining the heat sink 20 and the metal base plate 50 in the present invention was verified.
- FIG. 6 is an explanatory diagram showing the relationship between solder thickness, bondability, and protrusion.
- the power semiconductor module 1 (refer FIG. 1) was produced. Specifically, the semiconductor device 10 in which nickel plating is applied to the surface of the metal base plate 50 and the heat sink 20 in which nickel plating is applied to the joint surface between the metal base plate 50 were prepared. A laminated film in which nickel and aluminum were alternately laminated as the reactive metal foil 30 and Sn—Sb solder plates as the solders 31 and 32 were inserted between the metal base plate 50 and the heat sink 20, respectively.
- the thickness of the reactive metal foil 30 was 0.05 mm. Next, these stacked members were pressed from the metal base plate 50 side and the heat sink 20 side. In this state, an electric current was passed through the reactive metal foil 30 to ignite, and the solders 31 and 32 were melted and then solidified to join the metal base plate 50 and the heat sink 20. Thereafter, the void state (joinability) of the solder and the presence or absence of protrusion were examined. The thickness of the Sn—Sb solder plate used as the solders 31 and 32 was variously changed, and the above verification was repeated. The thickness of the Sn—Sb solder plate (the thickness of the solder in FIG. 6) was changed from 0.1 mm to 0.7 mm. The result is shown in FIG.
- the thickness of the Sn—Sb solder plate is preferably 0.2 mm or more and 0.5 mm or less in the joining of the nickel-plated metal base plate 50 and the heat sink 20. Note that there was almost no change in the thickness of the Sn—Sb solder plate and the thickness of the solders 31 and 32 before and after the joining of the metal base plate 50 and the heat sink 20.
- FIG. 7 is a cross-sectional view schematically showing a state where the insulating substrate and the metal base plate are warped.
- the thermal expansion coefficient differs between the metal base plate 50 and the insulating substrate 60 made of ceramics. For this reason, when the metal base plate 50 and the insulating substrate 60 are joined by solder, the metal base plate 50 warps in a convex shape toward the insulating substrate 60 due to a difference in thermal expansion coefficient. Therefore, when the metal base plate 50 is placed on the heat sink 20, a gap (hereinafter referred to as a metal base plate gap amount t) is generated between the metal base plate 50 and the heat sink 20. For this reason, when joining the metal base plate 50 and the heat sink 20, solder having a thickness sufficient to fill this gap is required.
- FIG. 8 is a characteristic diagram showing the relationship between the thickness of the insulating substrate and the gap amount between the metal base plate and the heat sink.
- the warp (metal base plate gap amount t) of the metal base plate 50 is that of the insulating plate 61 made of ceramics soldered to the surface opposite to the surface to which the heat sink 20 is bonded (upper side of the paper surface in FIG. 7). It is also affected by the thickness.
- the optimum thickness of the insulating plate 61 is preferably 0.2 mm or more and 0.6 mm or less as described above.
- the relationship between the metal base plate gap amount t As is apparent from the results shown in FIG. 8, it was found that the warp (metal base plate gap amount t) of the metal base plate 50 increases in proportion to the thickness of the insulating plate 61.
- FIG. 9 is a characteristic diagram showing the relationship between the amount of the gap between the metal base plate and the heat sink and the thickness of the solder.
- the relationship between the metal base plate gap amount t and the thicknesses of the solders 31 and 32 necessary to satisfactorily join the metal base plate 50 and the heat sink 20 was examined.
- a reactive metal foil 30 and solders 31 and 32 for joining the metal base plate 50 and the heat sink 20 were used, and these stacked members were pressed from the metal base plate 50 side and the heat sink 20 side. .
- the thickness of the insulating plate 61 is not less than 0.2 mm and not more than 0.6 mm
- the thicknesses of the solders 31 and 32 required to join the metal base plate 50 and the heat sink 20 (Sn ⁇ The thickness of the Sb solder plate was found to be about 0.2 mm or more and 0.5 mm or less. This is consistent with the result of Example 1.
- the metal base plate gap amount t can be filled and the bondability between the metal base plate 50 and the heat sink 20 can be improved. And it turns out that the protrusion of the solder by pressurization can be decreased.
- Example 3 Next, the thermal resistance in the power semiconductor module 2 (see FIG. 3) described in the second embodiment was verified.
- a heat semiconductor integrated power semiconductor module 2 was produced. Specifically, plating 35 and 36 (hereinafter referred to as tin plating) containing tin as a main component is applied to each joint surface of the heat sink 20 and the metal base plate 50. The thickness of the tin plating was 0.05 mm or less. Moreover, the thickness of the reactive metal foil 30 was 0.06 mm. Other configurations are the same as those in the first embodiment.
- the solders 31 and 32 are necessary as the joining material in addition to the reactive metal foil 30, but in the joining between the tin platings 35 and 36, only the reactive metal foil 30 is used. Thus, it was found that the heat sink 20 and the metal base plate 50 can be joined. The reason is presumed that the tin plating itself is melted by the ignition and heat generation of the reactive metal foil 30 and works as a bonding material.
- FIG. 10 is a characteristic diagram showing the relationship between heat sink thermal conductivity and thermal resistance.
- a power semiconductor module integrated with a heat sink was manufactured without using the metal base plate 50 (hereinafter referred to as an example).
- the heat sink 20 and the insulating substrate 60 are directly joined by plating 35 and 36 without using solder.
- a power semiconductor module having a conventional structure in which a screw is tightened between a metal base plate and a heat sink via heat-dissipating grease was prepared (see FIG. 11, hereinafter referred to as a conventional structure).
- FIG. 10 shows the results of evaluating the heat dissipation of the example and the conventional structure in the heat conductivity of the heat sink under these four conditions.
- the horizontal axis of FIG. 10 is the heat conductivity [W / (m ⁇ K)] of the heat sink, and the vertical axis is the thermal resistance Rth (jw) [K between the semiconductor chip and the heat sink (junction-refrigerant question). / W].
- the example is superior in heat dissipation compared with the conventional structure.
- the heat dissipation can be greatly improved by directly bonding the insulating substrate and the heat sink with a metal material without using the metal base plate and the heat dissipation grease.
- the thermal resistance of the conventional structure is smaller than that of the embodiment.
- the heat conductivity of the heat sink is preferably 138 W / (m ⁇ K) or more.
- a power semiconductor module including a semiconductor chip sealed in a state of being connected to a circuit pattern on an insulating substrate with a bonding wire has been described as an example, but not limited to the above-described embodiment, The present invention can be applied to circuits having various configurations. Further, the present invention can be applied to a semiconductor module having lower current performance and voltage performance than a power semiconductor module.
- the semiconductor device and the method for manufacturing the semiconductor device according to the present invention are useful for a power semiconductor module for controlling a large current in an electric vehicle, an electric railway, a machine tool, and the like.
- Power semiconductor module 10 Member (semiconductor device) containing a semiconductor chip 20 heat sink 30 reactive metal foil 31, 32, 33, 34 solder 40 semiconductor chip 50 metal base plate 60 insulating substrate 61 insulating plate 62, 63 metal plate 70 resin case 71 silicone gel 72 epoxy resin 73 lid 81 bonding wire 82 external connection Terminal
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Abstract
Une puce semi-conductrice (40) est fixée sur une surface principale d'un substrat isolant (60). Une plaque métallique de base (50) est fixée sur l'autre surface principale du substrat isolant (60). Ensuite, un boîtier en résine est fixé sur la partie périphérique de la plaque métallique de base (50) en enfermant la puce semi-conductrice (40). On connecte ensuite une électrode de surface formée sur la puce semi-conductrice (40) à une broche extérieure de connexion du boîtier en résine à l'aide d'un fil de raccordement (81), ce qui scelle la puce semi-conductrice (40). De cette manière, on a assemblé un dispositif semi-conducteur (10). Sur le dispositif semi-conducteur (10) assemblé, on insère une couche de soudure (31, 32) et un film métallique réactif (30) jouant le rôle de source de chaleur entre la plaque métallique de base (50) et un radiateur (20), on met sous pression le produit obtenu, on applique un courant électrique au film métallique réactif (30) afin de causer l'allumage et donc la fusion de la soudure (31, 32), après quoi la soudure fondue (31, 32) se solidifie. De cette manière, la plaque métallique de base (50) et le radiateur (20) sont fixés instantanément l'un à l'autre à température ambiante.
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JP2009223820A JP2013016525A (ja) | 2009-09-29 | 2009-09-29 | パワー半導体モジュールおよびその製造方法 |
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Cited By (5)
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JP2013187396A (ja) * | 2012-03-08 | 2013-09-19 | Daikin Ind Ltd | パワーモジュール |
EP3352214A1 (fr) * | 2017-01-23 | 2018-07-25 | Siemens Aktiengesellschaft | Module à semi-conducteur avec tolérance de concavité |
CN109509742A (zh) * | 2017-09-14 | 2019-03-22 | 株式会社东芝 | 半导体装置 |
CN112453617A (zh) * | 2020-11-26 | 2021-03-09 | 中国电子科技集团公司第三十八研究所 | 一种3d微波射频模块中双面叠层气密钎焊系统及钎焊方法 |
US11348851B2 (en) * | 2020-03-18 | 2022-05-31 | Mitsubishi Electric Corporation | Case with a plurality of pair case components for a semiconductor device |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015046236A (ja) * | 2013-08-27 | 2015-03-12 | 東芝ライテック株式会社 | 発光装置及び照明装置 |
DE102014213490C5 (de) * | 2014-07-10 | 2020-06-18 | Continental Automotive Gmbh | Kühlvorrichtung, Verfahren zur Herstellung einer Kühlvorrichtung und Leistungsschaltung |
JPWO2016021561A1 (ja) * | 2014-08-08 | 2017-05-25 | 日本発條株式会社 | 複合基板及びパワーモジュール |
DE102015216887B4 (de) | 2015-09-03 | 2018-05-30 | Continental Automotive Gmbh | Kühlvorrichtung, Verfahren zur Herstellung einer Kühlvorrichtung und Leistungsschaltung |
JP6818649B2 (ja) | 2017-07-25 | 2021-01-20 | 株式会社東芝 | 半導体装置及び半導体素子 |
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JP2006093700A (ja) * | 2004-09-21 | 2006-04-06 | Lucent Technol Inc | 熱移送装置 |
JP2007501715A (ja) * | 2003-05-13 | 2007-02-01 | リアクティブ ナノテクノロジーズ,インク. | 反応性多層接合において熱波を制御する方法およびそれによって得られた製品 |
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JP2007501715A (ja) * | 2003-05-13 | 2007-02-01 | リアクティブ ナノテクノロジーズ,インク. | 反応性多層接合において熱波を制御する方法およびそれによって得られた製品 |
JP2006093700A (ja) * | 2004-09-21 | 2006-04-06 | Lucent Technol Inc | 熱移送装置 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013187396A (ja) * | 2012-03-08 | 2013-09-19 | Daikin Ind Ltd | パワーモジュール |
EP3352214A1 (fr) * | 2017-01-23 | 2018-07-25 | Siemens Aktiengesellschaft | Module à semi-conducteur avec tolérance de concavité |
WO2018134332A1 (fr) * | 2017-01-23 | 2018-07-26 | Siemens Aktiengesellschaft | Module semi-conducteur avec plaque de fond à courbure creuse |
US11201098B2 (en) | 2017-01-23 | 2021-12-14 | Siemens Aktiengesellschaft | Semiconductor module having a base plate with a concave curvature |
CN109509742A (zh) * | 2017-09-14 | 2019-03-22 | 株式会社东芝 | 半导体装置 |
US11348851B2 (en) * | 2020-03-18 | 2022-05-31 | Mitsubishi Electric Corporation | Case with a plurality of pair case components for a semiconductor device |
CN112453617A (zh) * | 2020-11-26 | 2021-03-09 | 中国电子科技集团公司第三十八研究所 | 一种3d微波射频模块中双面叠层气密钎焊系统及钎焊方法 |
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