WO2010150606A1 - Dispositif photovoltaïque et son procédé de fabrication - Google Patents

Dispositif photovoltaïque et son procédé de fabrication Download PDF

Info

Publication number
WO2010150606A1
WO2010150606A1 PCT/JP2010/058646 JP2010058646W WO2010150606A1 WO 2010150606 A1 WO2010150606 A1 WO 2010150606A1 JP 2010058646 W JP2010058646 W JP 2010058646W WO 2010150606 A1 WO2010150606 A1 WO 2010150606A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
back surface
semiconductor substrate
photovoltaic device
insulating film
Prior art date
Application number
PCT/JP2010/058646
Other languages
English (en)
Japanese (ja)
Inventor
濱本　哲
隆 石原
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to TW099117549A priority Critical patent/TW201104898A/zh
Publication of WO2010150606A1 publication Critical patent/WO2010150606A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Definitions

  • the present invention relates to a photovoltaic device and a manufacturing method thereof.
  • the wavelength that has not been fully utilized before can be achieved by confining light in the photovoltaic device and suppressing the recombination speed of carriers on the front and back surfaces. It is important to realize structures and manufacturing methods that contribute to the generation of light in the region. Therefore, it is very important to improve the back surface structure of the substrate that plays the role.
  • Patent Document 1 a film that suppresses the recombination rate is formed after the back electrode is printed and baked. In this case, especially during firing, the attachment and fixation of contaminants proceeds on the back surface of the substrate, and therefore it is extremely difficult to keep the carrier recombination rate on the back surface of the substrate low as intended. There is.
  • an electrode paste is printed so as to cover almost the entire surface of the film that suppresses the recombination speed to form a back electrode that also functions as a light reflection function. This contact is partially made.
  • the back electrode is made of, for example, a paste containing aluminum (Al), which is a typical material, the light reflectivity on the back surface cannot be increased, and sufficient photovoltaic power can be introduced into the photovoltaic device. There is a problem that the optical confinement effect cannot be obtained.
  • the back electrode is made of, for example, a paste containing silver (Ag), which is a typical material
  • a film that suppresses the recombination rate even in a region other than the original contact portion during the electrode firing process Is eroded by fire-through, and there is a problem that a sufficient effect of suppressing the recombination rate of carriers cannot be obtained.
  • the present invention has been made in view of the above, and an object of the present invention is to obtain a photovoltaic device having a low recombination speed and a high back surface reflectance and excellent photoelectric conversion efficiency and a method for manufacturing the photovoltaic device.
  • a photovoltaic device includes a first conductivity type semiconductor substrate having an impurity diffusion layer in which a second conductivity type impurity element is diffused on one side.
  • a back surface structure having both a low recombination speed and a high back surface reflectance can be realized, and a solar cell having excellent long wavelength sensitivity and high photoelectric conversion efficiency can be obtained. There is an effect that it is possible.
  • FIG. 1-1 is a cross-sectional view of relevant parts for explaining the cross-sectional structure of the solar battery cell according to the first embodiment of the present invention.
  • FIG. 1-2 is a top view of the solar cell according to the first embodiment of the present invention as viewed from the light receiving surface side.
  • FIG. 1-3 is a bottom view of the solar battery cell according to the first embodiment of the present invention as viewed from the back surface side.
  • FIG. 2 is a characteristic diagram showing the reflectance on the back surface of the semiconductor substrate in three types of samples having different back surface structures.
  • FIG. 3 is a characteristic diagram showing the relationship between the area ratio of the back electrode and the open circuit voltage (Voc) in the sample manufactured by simulating the solar battery cell according to the first embodiment.
  • FIGS. 5-1 is sectional drawing for demonstrating the manufacturing process of the photovoltaic cell concerning Embodiment 1 of this invention.
  • FIGS. FIGS. 5-2 is sectional drawing for demonstrating the manufacturing process of the photovoltaic cell concerning Embodiment 1 of this invention.
  • FIGS. FIGS. 5-3 is sectional drawing for demonstrating the manufacturing process of the photovoltaic cell concerning Embodiment 1 of this invention.
  • FIGS. FIGS. 5-4 is sectional drawing for demonstrating the manufacturing process of the photovoltaic cell concerning Embodiment 1 of this invention.
  • FIGS. FIGS. 5-5 is sectional drawing for demonstrating the manufacturing process of the photovoltaic cell concerning Embodiment 1 of this invention.
  • FIGS. FIGS. 5-6 is sectional drawing for demonstrating the manufacturing process of the photovoltaic cell concerning Embodiment 1 of this invention.
  • FIGS. FIGS. 5-7 is sectional drawing for demonstrating the manufacturing process of the photovoltaic cell concerning Embodiment 1 of this invention.
  • FIGS. FIGS. 5-8 is sectional drawing for demonstrating the manufacturing process of the photovoltaic cell concerning Embodiment 1 of this invention.
  • FIGS. FIGS. 5-9 is sectional drawing for demonstrating the manufacturing process of the photovoltaic cell concerning Embodiment 1 of this invention.
  • FIGS. FIG. FIG. 5-6 is sectional drawing for demonstrating the manufacturing process of the photovoltaic cell concerning Embodiment 1 of this invention.
  • FIGS. FIGS. 5-7 is sectional drawing for demonstrating the manufacturing process of the photovoltaic cell concerning Embodiment 1
  • FIG. 6-1 is a plan view showing an example of a printed region of the back surface side electrode material paste on the back surface insulating film of the solar battery cell according to the first embodiment of the present invention.
  • FIG. 6-2 is a plan view showing an example of a printed region of the back surface side electrode material paste on the back surface insulating film of the solar battery cell according to the first embodiment of the present invention.
  • FIG. 7 is a schematic diagram for explaining a reinforced passivation process in the manufacturing process of the solar battery cell according to the first embodiment of the present invention.
  • FIG. 8 is a characteristic diagram showing a difference in open-circuit voltage characteristics of the solar battery cell according to the first embodiment of the present invention depending on whether or not the reinforced passivation process is performed.
  • FIG. 9 is a characteristic diagram showing a difference in short-circuit current characteristics of the solar battery cell according to the first embodiment of the present invention depending on whether or not the reinforced passivation process is performed.
  • FIG. 10 is principal part sectional drawing for demonstrating the cross-section of the photovoltaic cell concerning Embodiment 2 of this invention.
  • FIG. FIGS. 1-1 to 1-3 are diagrams showing a configuration of a solar battery cell that is a photovoltaic device according to the present embodiment, and FIG. 1-1 is for explaining a cross-sectional structure of the solar battery cell.
  • FIG. 1-2 is a top view of the solar cell viewed from the light receiving surface side
  • FIG. 1-3 is a bottom view of the solar cell viewed from the side opposite to the light receiving surface (back side).
  • FIG. 1-1 is a cross-sectional view of an essential part taken along line AA in FIG. 1-2.
  • the solar cell according to the present embodiment includes a solar cell substrate having a photoelectric conversion function and having a pn junction, An antireflection film 4 made of a silicon nitride film (SiN film) which is an insulating film formed on the light receiving surface side (surface) and prevents reflection of incident light on the light receiving surface, and a light receiving surface side of the semiconductor substrate 1 On the surface (front surface), the light receiving surface side electrode 5 that is the first electrode formed surrounded by the antireflection film 4 and the silicon nitride film (back surface) opposite to the light receiving surface of the semiconductor substrate 1 (back surface)
  • Back surface reflection film 1 provided to cover back surface side electrode 9 And, equipped with a.
  • the semiconductor substrate 1 includes a p-type polycrystalline silicon substrate 2 which is a first conductivity type layer, and an impurity diffusion layer (n-type impurity diffusion) which is a second conductivity type layer formed by phosphorous diffusion on the light receiving surface side of the semiconductor substrate 1.
  • the layer) 3 constitutes a pn junction.
  • the n-type impurity diffusion layer 3 has a surface sheet resistance of 30 to 100 ⁇ / ⁇ .
  • the light-receiving surface side electrode 5 includes a grid electrode 6 and a bus electrode 7 of the solar battery cell, and is electrically connected to the n-type impurity diffusion layer 3.
  • the grid electrode 6 is locally provided on the light receiving surface to collect electricity generated by the semiconductor substrate 1.
  • the bus electrode 7 is provided substantially orthogonal to the grid electrode 6 in order to take out the electricity collected by the grid electrode 6.
  • the back surface side electrode 9 is embedded in the back surface insulating film 8 provided over the entire back surface of the semiconductor substrate 1. That is, the back insulating film 8 is provided with a substantially circular dot-shaped opening 8 a that reaches the back surface of the semiconductor substrate 1.
  • a back-side electrode 9 made of an electrode material containing aluminum, glass, or the like is provided so as to fill the opening 8a and to have an outer shape wider than the diameter of the opening 8a in the in-plane direction of the back insulating film 8. Yes.
  • the back insulating film 8 is made of a silicon nitride film (SiN film), and is formed on almost the entire back surface of the semiconductor substrate 1 by a plasma CVD (Chemical Vapor Deposition) method.
  • SiN film silicon nitride film formed by the plasma CVD method
  • the back surface reflection film 10 is provided on the back surface of the semiconductor substrate 1 so as to cover the back surface side electrode 9 and the back surface insulating film 8.
  • the back surface reflecting film 10 covering the back surface insulating film 8
  • the light transmitted through the semiconductor substrate 1 and the back surface insulating film 8 can be reflected and returned to the semiconductor substrate 1, and a good light confinement effect can be obtained. it can.
  • the back surface reflecting film 10 is comprised by the silver (Ag) film
  • the solar battery cell according to the present embodiment can obtain an excellent light confinement effect by including the back surface reflection film 10 formed of a silver sputtering film.
  • the material of the back surface reflection film 10 for example, it is preferable to use a metal material having a reflectance of 90% or more, preferably 95% or more with respect to light having a wavelength near 1100 nm.
  • a solar cell having high long wavelength sensitivity and excellent light confinement effect for light in the long wavelength region can be realized. That is, although depending on the thickness of the semiconductor substrate 1, light having a long wavelength of 900 nm or more, particularly about 1000 nm to 1100 nm, can be efficiently taken into the semiconductor substrate 1 and a high generated current (Jsc) can be realized. Characteristics can be improved.
  • a material for example, aluminum (Al) can be used in addition to silver (Ag).
  • the fine back surface side electrode 9 is formed on the back surface of the semiconductor substrate 1, and the back surface reflection film 10 is formed thereon.
  • the back surface reflecting film 10 shown in FIG. 1C actually has fine unevenness due to the back side electrode 9, the description of the fine unevenness is omitted in FIG. ing.
  • an aluminum-silicon (Al—Si) alloy portion 11 is formed in a region on the back surface side of the semiconductor substrate 1 and in contact with the back surface side electrode 9 and in the vicinity thereof.
  • a BSF (Back Surface Filed Layer) 12 which is a high-concentration diffusion layer having the same conductivity type as that of the p-type polycrystalline silicon substrate 2 surrounding the aluminum-silicon (Al—Si) alloy portion 11 is provided on the outer periphery thereof. Is formed.
  • the solar cell configured as described above, sunlight is applied from the light receiving surface side of the solar cell to the pn junction surface of the semiconductor substrate 1 (the junction surface between the p-type polycrystalline silicon substrate 2 and the n-type impurity diffusion layer 3).
  • the generated electrons move toward the n-type impurity diffusion layer 3, and the holes move toward the p-type polycrystalline silicon substrate 2.
  • the number of electrons in the n-type impurity diffusion layer 3 becomes excessive, and the number of holes in the p-type polycrystalline silicon substrate 2 becomes excessive.
  • a photovoltaic force is generated.
  • This photovoltaic power is generated in the direction of biasing the pn junction in the forward direction, the light receiving surface side electrode 5 connected to the n-type impurity diffusion layer 3 becomes a negative electrode, and the back surface side electrode 9 connected to the p-type polycrystalline silicon substrate 2. Becomes a positive pole, and current flows in an external circuit (not shown).
  • FIG. 2 is a characteristic diagram showing the reflectance on the back surface of the semiconductor substrate in three types of samples having different back surface structures.
  • FIG. 2 shows the relationship between the wavelength of light incident on the sample and the reflectance.
  • Each sample is produced by imitating a solar battery cell, and the basic structure other than the back surface structure is the same as that of the solar battery cell according to this embodiment.
  • the details of the back surface structure of each sample are as follows.
  • Example A An aluminum (Al) paste electrode formed from an electrode paste containing aluminum (Al) is provided over the entire back surface of the semiconductor substrate (corresponding to a conventional general structure).
  • Sample B A back insulating film made of a silicon nitride film (SiN) is formed over the entire back surface of the semiconductor substrate, and an aluminum (Al) paste electrode formed from an electrode paste containing aluminum (Al) is provided over the entire back insulating film (preceding) Technology (equivalent to Patent Document 2)).
  • a back insulating film made of a silicon nitride film (SiN) is formed over the entire back surface of the semiconductor substrate, and an aluminum (Al) paste electrode formed from an electrode paste containing aluminum (Al) is locally provided on the back surface of the semiconductor substrate. Further, a high reflection film made of a silver sputtering film is provided on the entire surface of the back insulating film (corresponding to the solar battery cell according to the present embodiment).
  • the sample B corresponding to the prior art has a slight improvement in reflectance as compared with the sample A corresponding to the conventional general structure, but the effect of improving the reflectance is sufficient. It can not be said.
  • Sample C corresponding to the solar battery cell according to the present embodiment has a higher reflectance than Sample A and Sample B, and a high reflectance between “silicon (semiconductor substrate) and back surface structure” is recognized. Thus, it can be seen that it is suitable for high efficiency based on the light confinement action on the back surface.
  • FIG. 3 shows the area ratio of the back electrode (ratio occupied by the back electrode on the back surface of the semiconductor substrate) and the open-circuit voltage (Voc) in the sample manufactured by simulating the solar battery cell according to the present embodiment in the same manner as the sample C described above.
  • FIG. 4 shows the area ratio of the back electrode (ratio occupied by the back electrode on the back surface of the semiconductor substrate) and the short-circuit current in the sample manufactured by imitating the solar battery cell according to the present embodiment in the same manner as the sample C described above. It is the characteristic view which showed the relationship with (Jsc).
  • the open circuit voltage (Voc) increases as the area ratio of the aluminum (Al) paste electrode as the back electrode decreases, that is, as the area ratio of the highly reflective film according to the present embodiment increases.
  • the short-circuit current (Jsc) are improved, and it is recognized that a good effect of suppressing the recombination rate of carriers is obtained on the back surface of the semiconductor substrate.
  • the solar cell according to the first embodiment configured as described above by providing a silicon nitride film (SiN film) formed by plasma CVD on the back surface of the semiconductor substrate 1 as the back surface insulating film 8, A good effect of suppressing the recombination rate of carriers on the back surface of the semiconductor substrate 1 can be obtained. Thereby, in the photovoltaic cell concerning this Embodiment, the improvement of an output characteristic is achieved and the high photoelectric conversion efficiency is implement
  • SiN film silicon nitride film
  • the back surface reflection film 10 made of a silver sputtering film is provided so as to cover the back surface insulating film 8, thereby making it more than a silver (Ag) film formed by a conventional printing method.
  • High light reflection can be realized, and more light transmitted through the semiconductor substrate 1 and the back surface insulating film 8 can be reflected back to the semiconductor substrate 1. Therefore, in the solar cell according to the present embodiment, an excellent light confinement effect can be obtained, the output characteristics can be improved, and high photoelectric conversion efficiency is realized.
  • the solar cell according to the first embodiment by having the structure of the back surface having both the low recombination speed and the high back surface reflectance, the long-wavelength sensitivity is excellent and the photoelectric conversion efficiency is improved.
  • the obtained solar battery cell is realized.
  • FIGS. 5-1 to 5-9 are cross-sectional views for explaining the manufacturing process of the solar battery cell according to the present embodiment.
  • a p-type polycrystalline silicon substrate that is most frequently used for consumer solar cells is prepared (hereinafter referred to as a p-type polycrystalline silicon substrate 1a) (FIG. 5-1).
  • a p-type polycrystalline silicon substrate 1a for example, a polycrystalline silicon substrate having an electrical resistance of about 0.5 to 3 ⁇ cm containing a group III element such as boron (B) is used.
  • the p-type polycrystalline silicon substrate 1a is manufactured by slicing an ingot formed by cooling and solidifying molten silicon with a wire saw, damage at the time of slicing remains on the surface. Therefore, the p-type polycrystalline silicon substrate 1a is first removed by immersing the surface of the p-type polycrystalline silicon substrate 1a in an acid or a heated alkaline solution, for example, in an aqueous solution of sodium hydroxide so as to remove the damaged layer. Thus, the damaged region existing near the surface of the p-type polycrystalline silicon substrate 1a is removed.
  • the thickness of the p-type polycrystalline silicon substrate 1a after the damage removal is, for example, 200 ⁇ m, and the dimension is, for example, 150 mm ⁇ 150 mm.
  • fine irregularities may be formed as a texture structure on the surface of the p-type polycrystalline silicon substrate 1a on the light receiving surface side.
  • this invention is invention concerning the back surface structure of a photovoltaic apparatus, it does not restrict
  • an alkaline aqueous solution containing isopropyl alcohol, a method using acid etching mainly composed of a mixed solution of hydrofluoric acid and nitric acid, or a mask material partially provided with an opening is formed on the surface of the p-type polycrystalline silicon substrate 1a.
  • Any method such as a method of obtaining a honeycomb structure or an inverted pyramid structure on the surface of the p-type polycrystalline silicon substrate 1a by etching through the mask material, or a method using reactive gas etching (RIE) Can be used.
  • RIE reactive gas etching
  • this p-type polycrystalline silicon substrate 1a is put into a thermal oxidation furnace and heated in an atmosphere of phosphorus (P) which is an n-type impurity.
  • phosphorus (P) is diffused on the surface of the p-type polycrystalline silicon substrate 1a to form an n-type impurity diffusion layer 3 to form a semiconductor pn junction (FIG. 5-2).
  • the n-type impurity diffusion layer 3 is formed by heating the p-type polycrystalline silicon substrate 1a in a phosphorus oxychloride (POCl 3 ) gas atmosphere at a temperature of, for example, 800 ° C. to 850 ° C.
  • the heat treatment is controlled so that the surface sheet resistance of the n-type impurity diffusion layer 3 is, for example, 30 to 80 ⁇ / ⁇ , preferably 40 to 60 ⁇ / ⁇ .
  • a phosphorus glass layer mainly composed of glass is formed on the surface immediately after the formation of the n-type impurity diffusion layer 3, it is removed using a hydrofluoric acid solution or the like.
  • a silicon nitride film (SiN film) is formed as the antireflection film 4 on the light receiving surface side of the p-type polycrystalline silicon substrate 1a on which the n-type impurity diffusion layer 3 is formed in order to improve the photoelectric conversion efficiency (FIG. 5-3).
  • a plasma CVD method is used, and a silicon nitride film is formed as the antireflection film 4 using a mixed gas of silane and ammonia.
  • the film thickness and refractive index of the antireflection film 4 are set to values that most suppress light reflection. Note that two or more films having different refractive indexes may be laminated as the antireflection film 4. Further, a different film forming method such as a sputtering method may be used for forming the antireflection film 4. Further, a silicon oxide film may be formed as the antireflection film 4.
  • the n-type impurity diffusion layer 3 formed on the back surface of the p-type polycrystalline silicon substrate 1a is removed by diffusion of phosphorus (P).
  • P phosphorus
  • the semiconductor substrate 1 having a pn junction is obtained (FIG. 5-4).
  • the removal of the n-type impurity diffusion layer 3 formed on the back surface of the p-type polycrystalline silicon substrate 1a is performed using, for example, a single-sided etching apparatus.
  • a method of using the antireflection film 4 as a mask material and immersing the entire p-type polycrystalline silicon substrate 1a in an etching solution may be used.
  • an alkaline aqueous solution such as sodium hydroxide or potassium hydroxide heated to room temperature to 95 ° C., preferably 50 ° C. to 70 ° C. is used.
  • a mixed aqueous solution of nitric acid and hydrofluoric acid may be used as the etching solution.
  • the silicon surface exposed on the back surface of the semiconductor substrate 1 is washed in order to keep the recombination rate low in film formation described later.
  • the cleaning is performed using, for example, RCA cleaning or a 1% to 20% hydrofluoric acid aqueous solution.
  • a back surface insulating film 8 made of a silicon nitride film (SiN film) is formed on the back surface side of the semiconductor substrate 1 (FIG. 5-5).
  • a back insulating film 8 made of a silicon nitride film (SiN film) having a refractive index of 1.9 to 2.2 and a thickness of 60 nm to 300 nm is formed on the silicon surface exposed on the back side of the semiconductor substrate 1 by plasma CVD. Film.
  • plasma CVD plasma CVD, the back surface insulating film 8 made of a silicon nitride film can be reliably formed on the back surface side of the semiconductor substrate 1.
  • the recombination rate of carriers on the back surface of the semiconductor substrate 1 can be suppressed, and silicon (Si) and silicon nitride film (SiN film) on the back surface of the semiconductor substrate 1 can be suppressed. ), A recombination velocity of 100 cm / sec or less is obtained. Thereby, it is possible to realize a sufficient back surface interface for high output.
  • the refractive index of the back surface insulating film 8 deviates from 1.9 to 2.2, it is difficult to stabilize the deposition environment of the silicon nitride film (SiN film), and the film quality of the silicon nitride film (SiN film) deteriorates. As a result, the recombination rate at the interface with silicon (Si) also deteriorates.
  • the thickness of the back insulating film 8 is smaller than 60 nm, the interface with silicon (Si) is not stable, and the carrier recombination rate is deteriorated.
  • the thickness of the back insulating film 8 is larger than 300 nm, there is no functional inconvenience, but it takes time to form a film and increases costs, which is not preferable from the viewpoint of productivity.
  • the back insulating film 8 may have a two-layer structure in which a silicon oxide film (silicon thermal oxide film: SiO 2 film) formed by thermal oxidation and a silicon nitride film (SiN film) are stacked, for example.
  • the silicon oxide film (SiO 2 film) here is not a natural oxide film formed on the back side of the semiconductor substrate 1 during the process, but a silicon oxide film (SiO 2 film) intentionally formed by thermal oxidation, for example. To do.
  • SiO 2 film silicon oxide film
  • the effect of suppressing the recombination rate of carriers on the back surface of the semiconductor substrate 1 can be obtained more stably than the silicon nitride film (SiN film).
  • the thickness of the silicon oxide film (SiO 2 film) intentionally formed by thermal oxidation is preferably about 10 nm to 50 nm.
  • the thickness of the silicon oxide film (SiO 2 film) formed by thermal oxidation is less than 10 nm, the interface with silicon (Si) is not stable, and the recombination rate of carriers deteriorates.
  • the thickness of the silicon oxide film (SiO 2 film) formed by thermal oxidation is larger than 50 nm, there is no functional inconvenience, but the film formation takes time and the cost increases. It is not preferable from the viewpoint.
  • the film formation process is performed at a high temperature in order to shorten the time, the quality of the crystalline silicon itself is lowered, leading to a reduction in lifetime.
  • dot-shaped openings 8a having a predetermined interval are formed on a part or the entire surface of the back insulating film 8 (FIGS. 5-6).
  • the opening 8a is formed by performing direct patterning, for example, by laser irradiation on the back surface insulating film 8.
  • the cross-sectional area of the opening 8 a in the in-plane direction of the back insulating film 8 is increased, and the opening of the opening 8 a in the plane of the back insulating film 8. It is preferable to increase the density.
  • the cross-sectional area of the opening 8a is small and the opening density of the opening 8a is low. Therefore, it is preferable that the shape and density of the opening 8a be kept to a minimum level necessary for realizing a good contact.
  • the shape of the opening 8a has a diameter or width of 20 ⁇ m to 200 ⁇ m, and a substantially circular dot shape or a substantially rectangular shape with an interval between adjacent opening portions 8a of 0.5 mm to 2 mm. Is mentioned.
  • a stripe shape having a width of 20 ⁇ m to 200 ⁇ m and a distance between adjacent openings 8a of 0.5 mm to 3 mm can be cited.
  • dot-shaped openings 8 a are formed by laser irradiation on the back surface insulating film 8.
  • a back-side electrode material paste 9a containing aluminum, glass, or the like which is an electrode material for the back-side electrode 9, fills the opening 8a and is slightly larger than the diameter of the opening 8a in the in-plane direction of the back-side insulating film 8. It is applied in a limited manner by screen printing so as not to come into contact with the back-side electrode material paste 9a covering a wide area and filling the adjacent opening 8a (FIGS. 5-7).
  • the application shape, application amount, and the like of the back-side electrode material paste 9a can be changed according to various conditions such as the diffusion concentration of aluminum in the Al—Si alloy part 11 and the BSF 12 in the firing step described later.
  • the light reflectance (back surface reflectance) by the back surface side electrode 9 in the region where the back surface insulating film 8 (silicon nitride film) and the back surface side electrode 9 are laminated on the back surface of the semiconductor substrate 1 is not sufficient.
  • the formation area of the back surface side electrode 9 on the back surface insulating film 8 becomes wide, the light confinement effect in the photovoltaic device is lowered. Therefore, the area where the back side electrode material paste 9a is printed is limited to the minimum necessary after balancing the formation conditions of the Al—Si alloy part 11 and the BSF 12 and the light confinement effect in the photovoltaic device. There is a need.
  • FIGS. 6A and 6B are plan views showing an example of the printing region of the back surface side electrode material paste 9a on the back surface insulating film 8.
  • FIGS. FIG. 6A shows an example in which the opening 8a has a substantially circular dot shape
  • FIG. 6B shows an example in which the opening 8a has a substantially rectangular shape.
  • Overlap amount is, 1000 .mu.m 2 from 200 [mu] m 2 in sectional area from the end of the opening 8a, preferably it is desirable to control in the range of 400 [mu] m 2 of 1000 .mu.m 2.
  • the paste thickness of the back side electrode material paste 9a containing aluminum (Al) is 20 ⁇ m, in terms of the width of the overlap, 10 ⁇ m to 50 ⁇ m, preferably 20 ⁇ m from the end of the opening 8a. It corresponds to the range of 50 ⁇ m.
  • the overlap width is less than 10 ⁇ m, the effect of preventing the peeling of the back surface insulating film 8 will not be exhibited, but the supply of aluminum (Al) will not be successful at the time of firing, that is, when the alloy is formed, and the BSF structure will not be formed well. Part occurs.
  • the overlap width is larger than 50 ⁇ m, the area ratio occupied by the paste printing portion increases, that is, the area ratio of the high reflection film decreases, and the deviation from the intention of the present invention becomes large.
  • the outer periphery of the opening 8a on the back insulating film 8 includes a ring-shaped overlap region 9b having a width of 20 ⁇ m.
  • the opening 8a has a substantially rectangular shape as shown in FIG. 6B
  • a frame-shaped overlap region 9b having a width of 20 ⁇ m is provided on the outer periphery of the opening 8a on the back surface insulating film 8
  • the back surface side electrode material paste 9a is limitedly applied on the back surface insulating film 8 by screen printing.
  • the width w of the opening 8a is 100 ⁇ m
  • a light receiving surface electrode material paste 5 a which is an electrode material of the light receiving surface side electrode 5 and contains silver (Ag), glass or the like is formed into the shape of the light receiving surface side electrode 5.
  • the light-receiving surface electrode material paste 5a is, for example, a pattern of elongated grid electrodes 6 having a width of 80 ⁇ m to 150 ⁇ m and a spacing of 2 mm to 3 mm, and a strip shape having a width of 1 mm to 3 mm and a spacing of 5 mm to 10 mm in a direction substantially perpendicular to the pattern.
  • the pattern of the bus electrode 7 is printed.
  • the shape of the light receiving surface side electrode 5 is not directly related to the present invention, it may be freely set while balancing between the electrode resistance and the printing light shielding rate.
  • firing is performed at a peak temperature of 760 ° C. to 900 ° C. using, for example, an infrared furnace heater.
  • the light receiving surface side electrode 5 and the back surface side electrode 9 are formed, and the Al—Si alloy portion 11 is formed in the region on the back surface side of the semiconductor substrate 1 and in contact with the back surface side electrode 9 and its vicinity. Is done.
  • a BSF 12 that is a p + region in which aluminum is diffused in a high concentration from the back surface side electrode 9 is formed on the outer periphery of the Al—Si alloy portion 11, and the BSF layer 12 and the back surface side electrode 9 are electrically connected to each other. Connection ( Figure 5-8).
  • the recombination speed at the interface deteriorates at this connection point, but the BSF layer 12 can negate this effect. Further, the silver in the light receiving surface side electrode 5 penetrates the antireflection film 4, and the n-type impurity diffusion layer 3 and the light receiving surface side electrode 5 are electrically connected.
  • the semiconductor substrate 1 since the region where the back surface side electrode material paste 9a is not applied on the back surface of the semiconductor substrate 1 is protected by the back surface insulating film 8 made of a silicon nitride film (SiN film), the semiconductor substrate 1 is also subjected to heating by baking. The adherence and fixation of contaminants do not proceed with respect to the back surface, and a good state is maintained without degrading the recombination speed.
  • SiN film silicon nitride film
  • FIG. 7 is a schematic diagram for explaining a reinforced passivation process in the manufacturing process of the solar battery cell according to the first embodiment.
  • the exhaust system 36 is evacuated while the inside of the processing tank 31 is isolated from the outside by the lid 34, and then the atmosphere gas containing hydrogen is introduced into the processing tank 31 by the supply system 33. Then, the inside of the treatment tank 31 is heated to a temperature range of 200 ° C. to 400 ° C. by the heater 32 and held for 3 to 60 minutes, and annealing with hydrogen (FGA: Forming Gas Anneal) is performed.
  • FGA Forming Gas Anneal
  • the atmosphere gas is exhausted by the exhaust system unit 36 and evacuated once, and then the outside air is introduced into the processing tank 31 by the supply system unit 33 to release the vacuum. Then, the lid 34 is opened and the semiconductor substrate 1 is taken out together with the boat 35.
  • this strengthened passivation process it is only necessary to perform an annealing treatment in a temperature range of 200 ° C. to 400 ° C. for 3 minutes to 60 minutes in an atmosphere containing hydrogen, and the apparatus is not particularly specified other than the above.
  • a highly reflective structure is formed on the back side of the semiconductor substrate 1. That is, a silver (Ag) film (silver sputtering film) is formed on the entire back surface of the semiconductor substrate 1 by a sputtering method so as to cover the back electrode 9 and the back insulating film 8 (FIG. 5-9). ).
  • a silver (Ag) film silver sputtering film
  • a dense back surface reflection film 10 can be formed, and the back surface reflection film 10 that realizes higher light reflection than a silver (Ag) film formed by a printing method is formed. can do.
  • the back surface reflection film 10 may be formed so as to cover at least the back surface insulating film 8 on the back surface side of the semiconductor substrate 1. .
  • the solar battery cell according to Embodiment 1 shown in FIGS. 1-1 to 1-3 is manufactured.
  • the order of application of the paste as the electrode material may be switched between the light receiving surface side and the back surface side.
  • Hydrogen passivation means that hydrogen is bonded to dangling bonds in the crystal (atomic bonds with no bonding partner, which reduces the properties of the semiconductor crystal) by some process or process, and the silicon as the semiconductor crystal is This is a process for improving the characteristics.
  • a SiN film (to be precise, an amorphous SiN: H film) is formed by plasma CVD, and heating at the time of film formation and heating at the time of subsequent electrode firing are performed. Utilizing this, hydrogen in the SiN film penetrates into the inside of the crystal and bonds with dangling bonds, and a certain effect has already been obtained with respect to the inside of the crystal.
  • the heating used for firing focuses on firing the electrode paste, which is the original purpose of this process, and spreading hydrogen inside the crystal. Has declined.
  • the crystal characteristics and interface state (recombination speed) on the back side favorable, and the influence of this slight decrease is not small. .
  • This process complements this effect.
  • FIG. 8 is a characteristic diagram for explaining the effect of enhanced passivation (FGA by hydrogen) in the open circuit voltage (Voc) of the solar battery cell.
  • the open circuit voltage (Voc) with the battery cell is also shown.
  • FIG. 9 is a characteristic diagram for explaining the effect of enhanced passivation in the short circuit current (Jsc) of the solar battery cell.
  • Jsc short circuit current
  • the back surface side electrode material paste 9a is applied and fired. Therefore, the region where the back surface side electrode material paste 9a is not applied is protected by the back surface insulating film 8. Thereby, even in the heating by baking, adherence and fixation of the contaminant do not proceed to the back surface of the semiconductor substrate 1, and a good state is maintained without deteriorating the recombination speed, and the photoelectric conversion efficiency is improved.
  • the back surface reflecting film 10 is formed on the back surface of the semiconductor substrate 1 so as to cover at least the back surface insulating film 8.
  • the light transmitted through the semiconductor substrate 1 and the back surface insulating film 8 can be reflected by the back surface reflective film 10 and returned to the semiconductor substrate 1, and a good light confinement effect can be obtained.
  • high photoelectric conversion efficiency can be realized.
  • the back surface reflecting film 10 is formed by a sputtering method.
  • a dense back surface reflecting film 10 can be formed by forming the back surface reflecting film 10 by a sputtering film, not by a printing method using an electrode paste, and realizes higher light reflection than a film formed by the printing method.
  • the back reflective film 10 can be formed, and an excellent light confinement effect can be obtained.
  • the strengthening passivation step is performed after the light-receiving surface side electrode 5 and the back surface side electrode 9 are formed, the crystal quality and interface of the silicon crystal of the semiconductor substrate 1 The state can be improved satisfactorily and the solar cell characteristics can be improved.
  • the manufacturing method of the solar cell according to the first embodiment it is possible to obtain a back surface structure having both a low recombination speed and a high back surface reflectance, an excellent long wavelength sensitivity, and a photoelectric conversion efficiency.
  • Solar cells with high efficiency can be manufactured.
  • the photoelectric conversion efficiency of the solar battery cell can be increased, the semiconductor substrate 1 can be thinned, the manufacturing cost can be reduced, and the high-quality solar battery cell excellent in battery cell characteristics can be achieved. Can be manufactured at low cost.
  • FIG. Embodiment 2 demonstrates the case where the back surface reflecting film 10 is comprised with metal foil as another form of the back surface reflecting film 10.
  • FIG. FIG. 10 is a cross-sectional view of relevant parts for explaining the cross-sectional structure of the solar battery cell according to the present embodiment, and corresponds to FIG. 1-1.
  • the difference between the solar battery cell according to the second embodiment and the solar battery cell according to the first embodiment is that the back surface reflection film is formed of an aluminum foil (aluminum foil) instead of a silver sputtering film. Since the structure of those other than this is the same as that of the photovoltaic cell concerning Embodiment 1, detailed description is abbreviate
  • the back surface reflection film 22 made of aluminum foil is formed by the conductive adhesive 21 disposed on the back surface side electrode 9 on the back surface of the semiconductor substrate 1.
  • the backside electrode 9 and the backside insulating film 8 are attached to the backside electrode 9 and are electrically connected to the backside electrode 9 through the conductive adhesive 21. Even in such a configuration, the light transmitted through the semiconductor substrate 1 and the back surface insulating film 8 can be reflected back to the semiconductor substrate 1 as in the case of the first embodiment, and good light confinement can be achieved with an inexpensive configuration. An effect can be obtained.
  • the back surface reflecting film 22 is comprised with the aluminum foil which is a metal stay. Since the back surface reflection film 22 is not a film formed by a printing method using an electrode paste, but is made of a metal stay, it can realize a higher light reflection than a metal film formed by a printing method, More light transmitted through the semiconductor substrate 1 and the back surface insulating film 8 can be reflected back to the semiconductor substrate 1. Therefore, the solar battery cell according to the present embodiment can obtain an excellent light confinement effect as in the case of the first embodiment by including the back surface reflection film 22 composed of the aluminum foil that is a metal stay. it can.
  • the material of the back surface reflection film 22 a metal material that can be processed into a foil can be used.
  • the reflectance with respect to light having a wavelength near 1100 nm is 90% or more, preferably 95%. It is preferable to use the above metal materials.
  • a solar cell having high long wavelength sensitivity and excellent light confinement effect for light in the long wavelength region can be realized. That is, although depending on the thickness of the semiconductor substrate 1, light having a long wavelength of 900 nm or more, particularly about 1000 nm to 1100 nm, can be efficiently taken into the semiconductor substrate 1 and a high generated current (Jsc) can be realized. Characteristics can be improved.
  • silver (Ag) can be used in addition to aluminum (Al).
  • the solar cell according to the present embodiment configured as described above is electrically conductive on the back-side electrode 9 after the steps described in the first embodiment with reference to FIGS. 5-1 to 5-8 and FIG. It can be produced by applying a conductive adhesive 21 and covering the back surface side electrode 9 and the back surface insulating film 8 with the conductive adhesive 21 and attaching a back surface reflection film 22.
  • the back surface reflection film 22 may be formed so as to cover at least the back surface insulating film 8 on the back surface side of the semiconductor substrate 1.
  • the solar cell according to the second embodiment configured as described above, by providing a silicon nitride film (SiN film) formed by plasma CVD on the back surface of the semiconductor substrate 1 as the back surface insulating film 8, A good effect of suppressing the recombination rate of carriers on the back surface of the semiconductor substrate 1 can be obtained. Thereby, in the photovoltaic cell concerning this Embodiment, the improvement of an output characteristic is achieved and the high photoelectric conversion efficiency is implement
  • SiN film silicon nitride film
  • the back surface insulating film 8 is provided so as to cover the back surface insulating film 8 and include a back surface reflecting film 22 made of aluminum foil that is a metal stay. High light reflection can be realized, and more light transmitted through the semiconductor substrate 1 and the back surface insulating film 8 can be reflected back to the semiconductor substrate 1. Therefore, in the solar cell according to the present embodiment, an excellent light confinement effect can be obtained, the output characteristics can be improved, and high photoelectric conversion efficiency is realized.
  • the solar cell according to the second embodiment by having the structure of the back surface having both the low recombination speed and the high back surface reflectivity, the long wavelength sensitivity is excellent, and the photoelectric conversion efficiency is improved.
  • the obtained solar battery cell is realized.
  • the back side electrode material paste 9a is applied and fired.
  • the region where the back side electrode material paste 9a is not applied is protected by the back side insulating film 8.
  • the back surface reflection film 22 is formed on the back surface of the semiconductor substrate 1 so as to cover at least the back surface insulating film 8.
  • the light transmitted through the semiconductor substrate 1 and the back surface insulating film 8 can be reflected by the back surface reflective film 22 and returned to the semiconductor substrate 1, and a good light confinement effect can be obtained.
  • high photoelectric conversion efficiency can be realized.
  • the back surface reflecting film 22 is formed by attaching an aluminum foil that is a metal stay on the back surface side electrode 9.
  • a dense back surface reflection film 22 can be formed by forming the back surface reflection film 22 using an aluminum foil as a back surface reflection film 22 instead of a printing method using an electrode paste.
  • the back surface reflection film 22 that realizes light reflection higher than that of the formed film can be formed, and an excellent light confinement effect can be obtained.
  • the method for manufacturing a solar battery cell according to the second embodiment it is possible to obtain a back surface structure having both a low recombination speed and a high back surface reflectance, an excellent long wavelength sensitivity, and a photoelectric conversion efficiency. Solar cells with high efficiency can be manufactured. Further, since the photoelectric conversion efficiency of the solar battery cell can be increased, the semiconductor substrate 1 can be thinned, the manufacturing cost can be reduced, and the high-quality solar battery cell excellent in battery cell characteristics can be achieved. Can be manufactured at low cost.
  • the strengthening passivation process is performed after the light receiving surface side electrode 5 and the back surface side electrode 9 are formed, the crystal quality and interface of the silicon crystal of the semiconductor substrate 1 The state can be improved satisfactorily and the solar cell characteristics can be improved.
  • the case where a p-type silicon substrate is used as the semiconductor substrate has been described.
  • a reverse conductivity type solar cell in which a p-type diffusion layer is formed using an n-type silicon substrate.
  • a polycrystalline silicon substrate is used as the semiconductor substrate, a single crystal silicon substrate may be used.
  • the substrate thickness of the semiconductor substrate is 200 ⁇ m.
  • a semiconductor substrate that can be self-held, for example, thinned to about 50 ⁇ m, can be used.
  • the size of the semiconductor substrate is 150 mm ⁇ 150 mm, but the size of the semiconductor substrate is not limited to this.
  • the photovoltaic device according to the present invention is useful for realizing a highly efficient photovoltaic device with a low recombination speed and a high back surface reflectance.
  • SYMBOLS 1 Semiconductor substrate 1a p-type polycrystalline silicon substrate 2 p-type polycrystalline silicon substrate 3 n-type impurity diffusion layer 4 Antireflection film 5 Light-receiving surface side electrode 5a Light-receiving surface electrode material paste 6 Grid electrode 7 Bus electrode 8 Back surface insulating film 8a Opening Part 9 Back side electrode 9a Back side electrode material paste 9b Overlapping region 10 Back surface reflection film 11 Aluminum-silicon (Al-Si) alloy part 12 BSF layer 21 Conductive adhesive 22 Back surface reflection film 31 Treatment tank 32 Heater 33 Supply system Part 34 lid 35 boat 36 exhaust system part

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention porte sur un dispositif photovoltaïque qui comprend : un substrat semi-conducteur d'un premier type de conductivité (1) ayant une couche à impuretés diffusées dans laquelle un élément d'impureté d'un second type de conductivité est diffusé sur un côté ; un film antireflet (4) formé sur la couche à impuretés diffusées ; des premières électrodes (5) qui pénètrent dans le film antireflet (4) et sont électriquement connectées à la couche à impuretés diffusées (3) ; un film isolant arrière (8) qui comporte une pluralité d'ouvertures (8a) qui atteignent l'autre côté du substrat semi-conducteur (1) et est formé sur l'autre côté du substrat semi-conducteur (1) ; des secondes électrodes (9) qui sont incorporées au moins dans les ouvertures (8a) et sont électriquement connectées à l'autre côté du substrat semi-conducteur (1) ; et un film réfléchissant arrière (10), qui est composé d'un film métallique formé au moyen d'un procédé de dépôt en phase vapeur ou est constitué par inclusion d'une feuille métallique, et est formé pour couvrir au moins le film isolant arrière (8).
PCT/JP2010/058646 2009-06-23 2010-05-21 Dispositif photovoltaïque et son procédé de fabrication WO2010150606A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW099117549A TW201104898A (en) 2009-06-23 2010-06-01 Photovoltaic device and method for manufacturing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2009/061425 WO2010150358A1 (fr) 2009-06-23 2009-06-23 Dispositif à force photoélectromotrice, et son procédé de fabrication
JPPCT/JP2009/061425 2009-06-23

Publications (1)

Publication Number Publication Date
WO2010150606A1 true WO2010150606A1 (fr) 2010-12-29

Family

ID=43386153

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/JP2009/061425 WO2010150358A1 (fr) 2009-06-23 2009-06-23 Dispositif à force photoélectromotrice, et son procédé de fabrication
PCT/JP2010/058646 WO2010150606A1 (fr) 2009-06-23 2010-05-21 Dispositif photovoltaïque et son procédé de fabrication

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/JP2009/061425 WO2010150358A1 (fr) 2009-06-23 2009-06-23 Dispositif à force photoélectromotrice, et son procédé de fabrication

Country Status (2)

Country Link
TW (1) TW201104898A (fr)
WO (2) WO2010150358A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5496354B2 (ja) * 2010-10-05 2014-05-21 三菱電機株式会社 光起電力装置およびその製造方法
DE112010005950T5 (de) * 2010-10-20 2013-08-14 Mitsubishi Electric Corporation Photovoltaikvorrichtung und Herstellungsverfahren für diese
EP2720280A4 (fr) * 2011-06-10 2015-03-04 Jx Nippon Oil & Energy Corp Élément de conversion photoélectrique
JP6113196B2 (ja) * 2013-01-16 2017-04-12 三菱電機株式会社 太陽電池セルおよびその製造方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0595127A (ja) * 1991-10-02 1993-04-16 Sharp Corp 光電変換素子の製造方法
JPH05110122A (ja) * 1991-10-17 1993-04-30 Sharp Corp 光電変換装置及びその製造方法
JPH06310740A (ja) * 1993-04-21 1994-11-04 Sharp Corp 太陽電池及びその製造方法
JPH09237910A (ja) * 1996-02-28 1997-09-09 Sharp Corp 太陽電池
JP2000138386A (ja) * 1998-11-04 2000-05-16 Shin Etsu Chem Co Ltd 太陽電池の製造方法およびこの方法で製造された太陽電池
JP2000323735A (ja) * 1999-05-10 2000-11-24 Mitsubishi Electric Corp 光起電力装置の製造方法及び光起電力装置
JP2004006565A (ja) * 2002-04-16 2004-01-08 Sharp Corp 太陽電池とその製造方法
JP2004128438A (ja) * 2002-08-01 2004-04-22 Sharp Corp 半導体デバイスおよびその製造方法
JP2006073897A (ja) * 2004-09-03 2006-03-16 Sharp Corp 太陽電池の製造方法
WO2006129444A1 (fr) * 2005-05-31 2006-12-07 Naoetsu Electronics Co., Ltd. Élément de pile solaire et procédé de fabrication idoine
JP2007294494A (ja) * 2006-04-21 2007-11-08 Shin Etsu Handotai Co Ltd 太陽電池の製造方法及び太陽電池

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0595127A (ja) * 1991-10-02 1993-04-16 Sharp Corp 光電変換素子の製造方法
JPH05110122A (ja) * 1991-10-17 1993-04-30 Sharp Corp 光電変換装置及びその製造方法
JPH06310740A (ja) * 1993-04-21 1994-11-04 Sharp Corp 太陽電池及びその製造方法
JPH09237910A (ja) * 1996-02-28 1997-09-09 Sharp Corp 太陽電池
JP2000138386A (ja) * 1998-11-04 2000-05-16 Shin Etsu Chem Co Ltd 太陽電池の製造方法およびこの方法で製造された太陽電池
JP2000323735A (ja) * 1999-05-10 2000-11-24 Mitsubishi Electric Corp 光起電力装置の製造方法及び光起電力装置
JP2004006565A (ja) * 2002-04-16 2004-01-08 Sharp Corp 太陽電池とその製造方法
JP2004128438A (ja) * 2002-08-01 2004-04-22 Sharp Corp 半導体デバイスおよびその製造方法
JP2006073897A (ja) * 2004-09-03 2006-03-16 Sharp Corp 太陽電池の製造方法
WO2006129444A1 (fr) * 2005-05-31 2006-12-07 Naoetsu Electronics Co., Ltd. Élément de pile solaire et procédé de fabrication idoine
JP2007294494A (ja) * 2006-04-21 2007-11-08 Shin Etsu Handotai Co Ltd 太陽電池の製造方法及び太陽電池

Also Published As

Publication number Publication date
TW201104898A (en) 2011-02-01
WO2010150358A1 (fr) 2010-12-29

Similar Documents

Publication Publication Date Title
JP5025184B2 (ja) 太陽電池素子及びこれを用いた太陽電池モジュール、並びに、これらの製造方法
JP5328363B2 (ja) 太陽電池素子の製造方法および太陽電池素子
JP5152407B2 (ja) 太陽電池セルおよびその製造方法
WO2013039158A1 (fr) Module de cellules solaires
JP2010521824A (ja) 太陽電池
WO2010119512A1 (fr) Dispositif photovoltaïque et son procédé de fabrication
JP4963866B2 (ja) 光電変換素子の製造方法
JP2013513964A (ja) 裏面接点・ヘテロ接合太陽電池
WO2011074280A1 (fr) Dispositif photovoltaïque et son procédé de préparation
JP5430773B2 (ja) 光起電力装置およびその製造方法
JP2016122749A (ja) 太陽電池素子および太陽電池モジュール
JP5323827B2 (ja) 光起電力装置およびその製造方法
JP2011134999A (ja) 太陽電池モジュール
WO2010150606A1 (fr) Dispositif photovoltaïque et son procédé de fabrication
JP5496354B2 (ja) 光起電力装置およびその製造方法
JP6115806B2 (ja) 光起電力装置
JP5014263B2 (ja) 光起電力装置およびその製造方法
JP5501549B2 (ja) 光電変換素子、およびそれから構成される光電変換モジュール
JP5452755B2 (ja) 光起電力装置の製造方法
JP6113196B2 (ja) 太陽電池セルおよびその製造方法
WO2018173125A1 (fr) Cellule solaire et module solaire
WO2009150741A1 (fr) Procédé de fabrication de dispositif photovoltaïque
JP2013149815A (ja) 太陽電池及びその製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10791924

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10791924

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP