WO2010140505A1 - レーザアニール方法及びレーザアニール装置 - Google Patents
レーザアニール方法及びレーザアニール装置 Download PDFInfo
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- WO2010140505A1 WO2010140505A1 PCT/JP2010/058787 JP2010058787W WO2010140505A1 WO 2010140505 A1 WO2010140505 A1 WO 2010140505A1 JP 2010058787 W JP2010058787 W JP 2010058787W WO 2010140505 A1 WO2010140505 A1 WO 2010140505A1
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- substrate
- lens
- tft
- lens array
- tft formation
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000005224 laser annealing Methods 0.000 title claims description 31
- 239000000758 substrate Substances 0.000 claims abstract description 200
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 89
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 25
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 239000011159 matrix material Substances 0.000 claims abstract description 11
- 230000001678 irradiating effect Effects 0.000 claims abstract 2
- 239000010408 film Substances 0.000 claims description 40
- 238000003384 imaging method Methods 0.000 claims description 23
- 230000000295 complement effect Effects 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 5
- 238000003491 array Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 229920005591 polysilicon Polymers 0.000 description 14
- 238000012545 processing Methods 0.000 description 9
- 238000012546 transfer Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- H01L21/02518—Deposited layers
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- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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- H01L21/02691—Scanning of a beam
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
Definitions
- the present invention relates to a laser annealing method for condensing laser light by a microlens array and annealing only a thin film transistor formation region of an amorphous silicon film. Specifically, the microlens array is moved following the movement of a substrate being conveyed.
- the present invention relates to a laser annealing method and a laser annealing apparatus for improving the laser beam irradiation position accuracy.
- a plurality of laser beams are formed by a microlens array, a focal point is formed for each beam, and each focal point of the beam is transferred to an amorphous silicon film surface to form an image.
- Laser processing is performed by beam irradiation on the surface, and an amorphous silicon film in a region where a thin film transistor (hereinafter referred to as “TFT”) is formed is converted into polysilicon (see, for example, Patent Document 1).
- TFT thin film transistor
- the laser light is condensed by the microlens array and only the amorphous silicon film in a plurality of TFT forming regions is annealed, so that the laser light utilization efficiency is high.
- the microlens array is moved following the movement of the substrate being conveyed while meandering, and each lens of the microlens array is positioned in each TFT formation region and irradiated with laser light. Is not disclosed. Therefore, when annealing while transporting a large substrate having a side of 1 m or more, if the substrate is transported while meandering due to the mechanical accuracy of the transport mechanism, it may not be possible to reliably anneal only each TFT formation region. was there.
- the present invention addresses such problems, moves the microlens array following the movement of the substrate being conveyed, and improves the laser beam irradiation position accuracy and laser annealing apparatus.
- the purpose is to provide.
- a laser annealing method includes a plurality of lenses of a lens array in a plurality of thin film transistor (hereinafter referred to as “TFT”) formation regions set in a matrix at a predetermined arrangement pitch on a substrate.
- TFT thin film transistor
- a laser annealing method for condensing the laser beam by annealing and annealing the amorphous silicon film in each TFT formation region wherein the substrate is arranged in either the vertical or horizontal arrangement direction of the TFT formation region set in the matrix shape
- the substrate surface is picked up by the imaging means while detecting the reference position of the alignment preset on the substrate surface based on the picked-up image, and the transport direction of the substrate corresponding to the plurality of TFT formation regions
- At least one row of lens arrays in which a plurality of lenses are arranged in a direction intersecting with the substrate in a direction intersecting with the transport direction of the substrate The lens array and the TFT formation region of the substrate are aligned with respect to the alignment reference position, and the substrate is moved so that the TFT formation region is directly below the corresponding lens of the lens array. When it reaches, the lens array is irradiated with the laser beam.
- the substrate surface is imaged by the imaging means while the substrate is transported in either the vertical or horizontal arrangement direction of the TFT formation region set in a matrix, and the substrate surface is preset based on the captured image.
- the reference position of the alignment is detected, and at least one row of lens arrays in which a plurality of lenses are arranged in a direction intersecting the substrate transport direction corresponding to the plurality of TFT formation regions is moved in the direction intersecting the substrate transport direction. Align the lens of the lens array and the TFT formation area of the substrate with reference to the alignment reference position.
- the laser light is applied to the lens array.
- the laser light is condensed by a plurality of lenses to anneal the amorphous silicon film in each TFT formation region.
- the lens array is composed of a plurality of lens rows in which lenses are arranged in parallel at a pitch that is an integer multiple of 2 or more of the arrangement pitch of the TFT formation regions in the same direction in a direction intersecting the transport direction of the substrate.
- the following lens array is formed by shifting by a predetermined dimension in the juxtaposition direction of the plurality of lenses so as to complement each lens of the lens array located on the leading side in the transport direction of the substrate. Is.
- Each TFT formation region is formed by a lens array having a configuration in which a subsequent lens row is formed by shifting by a predetermined dimension in a parallel arrangement direction of a plurality of lenses so as to complement each lens of the lens row located at Condensed on the amorphous silicon film.
- the substrate is a TFT substrate in which wirings are formed vertically and horizontally, and the TFT formation region is set at an intersection of the vertically and horizontally wirings, and the alignment reference position is a wire parallel to the transport direction of the TFT substrate. It is set at the edge.
- the lens of the lens array and the TFT substrate are aligned with respect to the alignment reference position set at the edge of the wiring parallel to the transport direction of the TFT substrate in which the TFT formation region is set at the intersection of the vertical and horizontal wirings. Alignment with the TFT formation region.
- the laser annealing apparatus condenses laser light by a plurality of lenses of a lens array on a plurality of TFT formation regions set in a matrix at a predetermined arrangement pitch on a substrate, and each of the TFT formation regions
- a plurality of condensing light sources arranged in parallel with the plurality of TFT formation regions in the same direction in a direction crossing the substrate transport direction in a plane parallel to the substrate surface.
- the lens array made of lenses and the condensing position of the laser beam by the lens array are separated by a certain distance in the direction opposite to the substrate transport direction.
- An image pickup means for picking up an image of the surface of the substrate with a position as an image pickup position, and moving the lens array in a direction intersecting the transport direction of the substrate to align the lens of the lens array with the TFT formation region of the substrate.
- An alignment unit and a control unit that drives and controls each of the components.
- the control unit images the surface of the substrate being transported, processes images sequentially input from the imaging unit, and applies the image to the substrate surface.
- a reference position of alignment set in advance is detected, and the lens of the lens array and the TFT formation area of the substrate are aligned with respect to the alignment reference position, and the substrate moves so that the TFT formation area Control so that laser light is emitted from the laser light source toward the lens array when it reaches directly below the corresponding lens of the lens array Is shall.
- the control means images the substrate surface being transported, processes images sequentially input from the imaging means, detects the reference position of alignment preset on the substrate surface, and drives the alignment means
- the lens array is controlled to move in a direction crossing the substrate transport direction, the lens of the lens array is aligned with the TFT formation region of the substrate based on the alignment reference position, and the substrate is moved by the transport means.
- control is performed so that laser light is emitted from the laser light source toward the lens array, and a plurality of matrixes are set on the substrate in a predetermined array pitch.
- Laser light is focused on the TFT formation area by a plurality of lenses of the lens array, and the amorphous silicon film in each TFT formation area is animated.
- the lens array comprises a plurality of lens rows in which lenses are arranged in parallel at a pitch that is an integer multiple of 2 or more of the arrangement pitch of the TFT formation regions in the same direction in a direction intersecting the transport direction of the substrate,
- the following lens array is formed by shifting by a predetermined dimension in the juxtaposition direction of the plurality of lenses so as to complement each lens of the lens array located on the leading side in the transport direction of the substrate. Is.
- Each TFT formation region is formed by a lens array having a configuration in which a subsequent lens row is formed by shifting by a predetermined dimension in a parallel arrangement direction of a plurality of lenses so as to complement each lens of the lens row located at Condensed on the amorphous silicon film.
- the substrate is a TFT substrate in which a plurality of wirings are formed vertically and horizontally, and the TFT formation region is set at an intersection of the plurality of wires, and the alignment reference position is parallel to the transport direction of the TFT substrate. It is set at one edge of a simple wiring. As a result, the lens of the lens array and the TFT substrate are aligned with respect to the alignment reference position set at the edge of the wiring parallel to the transport direction of the TFT substrate in which the TFT formation region is set at the intersection of the vertical and horizontal wirings. Alignment with the TFT formation region.
- the microlens array can be moved following the movement of the substrate being conveyed, and the laser beam irradiation position accuracy can be improved. Therefore, when annealing while transporting a large substrate having a side of 1 m or more, even if the substrate is transported while meandering due to the mechanical accuracy of the transport mechanism, only the TFT formation region can be reliably annealed. .
- the shape of each lens of the lens array can be increased to increase the amount of laser light taken up, and the irradiation energy of the laser light onto the amorphous silicon film can be increased. . Therefore, the burden on the laser light source that emits the laser light can be reduced, and the reliability of the apparatus can be improved.
- FIG. 1 It is a schematic diagram showing an embodiment of a laser annealing apparatus according to the present invention. It is a top view which shows the TFT substrate used for the laser annealing apparatus by this invention. It is explanatory drawing which shows one structural example of the micro lens array which comprises the laser annealing apparatus by this invention, and shows the positional relationship with an imaging means. It is a block diagram which shows one structural example of the control means which comprises the laser annealing apparatus by this invention. It is explanatory drawing shown about the detection of the edge part of the gate line of the said TFT substrate. 3 is a flowchart illustrating a laser annealing method according to the present invention.
- FIG. 1 is a schematic view showing an embodiment of a laser annealing apparatus according to the present invention.
- This laser annealing apparatus condenses laser light by a micro lens array and anneals only the TFT formation region of the amorphous silicon film formed on the substrate.
- the lens array 3, the imaging unit 4, the alignment unit 5, and the control unit 6 are provided.
- the substrate has a plurality of data lines 7 and gate lines 8 formed vertically and horizontally, and a gate electrode 30 (see FIG. 8) at the intersection of the data lines 7 and the gate lines 8.
- the TFT substrate 10 has, for example, a data line 7 in which an alignment reference position serving as a reference for alignment between the TFT formation region 9 and a microlens 15 of the microlens array 3 described later is parallel to the substrate transport direction (arrow A direction).
- the alignment reference position is set at the right edge of the data line 7 located at the left end in the substrate transport direction (arrow A direction). At this time, the horizontal distance between the right edge of the data line 7 and the center of the TFT formation region 9 is determined by the design value.
- the transport means 1 is configured to place the TFT substrate 10 on the upper surface and transport it at a constant speed in one of the vertical and horizontal arrangement directions of the TFT formation region 9, for example, in the direction of arrow A shown in FIG.
- a plurality of unit stages 12 having a plurality of ejection holes for ejecting gas and a plurality of suction holes for sucking gas are juxtaposed in the transport direction of the TFT substrate 10 (hereinafter referred to as “substrate transport direction”).
- substrate transport direction the transport direction of the TFT substrate 10
- a laser light source 2 is provided above the conveying means 1.
- the laser light source 2 is an excimer laser that emits laser light 14 having a wavelength of, for example, 308 nm or 353 nm at a repetition period of, for example, 50 Hz.
- a microlens array 3 is provided on the optical path of the laser light 14 emitted from the laser light source 2.
- the microlens array 3 focuses the laser beam 14 on a plurality of TFT formation regions 9 set on the TFT substrate 10, and is a surface parallel to the surface of the TFT substrate 10 as shown in FIG.
- a pitch (indicated by 2W in FIG. 3) that is an integer multiple of 2 or more of the array pitch W of the plurality of TFT formation regions 9 that intersect with the substrate transport direction (the direction of arrow A shown in FIG. 2).
- first lenses three lens rows
- second lens group 17 six lens rows in which microlenses 15 are arranged in parallel are arranged parallel to each other by a distance L, and three lens rows (hereinafter referred to as “first lenses”) positioned on the front side in the substrate transport direction.
- the subsequent three lens rows (hereinafter referred to as “second lens group 17”) are complemented with a predetermined dimension (in FIG. Is indicated by W) And it has a configuration.
- a specific configuration example of the microlens array 3 includes a plurality of microlenses 15 formed on one surface of a transparent substrate 34, and openings corresponding to the microlenses 15 on the other surface.
- An opaque light-shielding film 35 having a portion is formed.
- the light shielding film 35 is formed with an elongated opening window 36 parallel to the lens array at a certain distance in the direction opposite to the substrate transport direction of the second lens group 17.
- An N-shaped alignment mark 37 is provided in the opening window 36. The alignment mark 37 is used for alignment with the TFT substrate 10, and the center line parallel to the substrate transport direction of the oblique thin wire 37 a is set to one of the first lens group 16 and the second lens group 17.
- each microlens 15 of the microlens array 3 has a certain positional relationship with respect to the center of the alignment mark 37.
- each microlens 15 has a relationship in which the horizontal distance in the direction orthogonal to the substrate transport direction with respect to the center of the alignment mark 37 is nW (n is an integer of 1 or more).
- an image pickup means 4 is provided corresponding to the opening window 36 of the microlens array 3.
- the imaging means 4 has a surface through the substrate from the back side of the TFT substrate 10 with a position that is a fixed distance away from the condensing position of the laser light 14 by the microlens array 3 in the direction opposite to the substrate transport direction.
- a line camera (line) having a plurality of light receiving elements arranged in a straight line crossing the substrate transport direction indicated by arrow A in FIG.
- the lens array 17a is provided at a distance D from the lens array 17a located on the top side in the substrate transport direction.
- Alignment means 5 is provided so that the microlens array 3 can be moved in a direction crossing the substrate transport direction.
- the alignment means 5 has an alignment reference position (hereinafter referred to as “substrate-side alignment reference position”) set in advance on the data line 7 of the TFT substrate 10 and the center position of the oblique thin line 37a of the alignment mark 37 of the microlens array 3 (see FIG.
- the microlens array 3 is moved so that the distance to the “lens side alignment reference position” becomes a predetermined value, and each microlens 15 of the microlens array 3 and the TFT substrate 10 are For example, a stage and a motor for moving the microlens array 3 in a direction crossing the substrate transport direction (arrow A direction) are provided. Further, if necessary, another motor that rotates the microlens array 3 within a certain angular range around its optical axis may be provided.
- reference numeral 18 denotes a homogenizer that uniformizes the intensity distribution in the cross section of the laser light 14 emitted from the laser light source 2
- reference numeral 19 denotes the microlens array 3 that converts the laser light 14 into parallel light. It is a condenser lens to be irradiated.
- Reference numeral 20 denotes an illumination light source that illuminates the imaging position of the imaging means 4.
- a control means 6 is provided in connection with the conveying means 1, the laser light source 2, the imaging means 4, and the alignment means 5.
- the control means 6 performs real-time processing on the substrate surface and the one-dimensional image of the alignment mark 37 of the microlens array 3 that are simultaneously imaged by the imaging means 4 and is set on the data line 7 of the TFT substrate 10.
- the lens side alignment reference position of the microlens array 3 is detected, and the alignment unit 5 is driven so that the distance between the two becomes a predetermined value, and the microlens array 3 is moved in a direction intersecting the substrate transport direction.
- each microlens 15 of the microlens array 3 and the TFT formation region 9 of the TFT substrate 10 are aligned, and the edge of the gate line 8 of the TFT substrate 10 is aligned with the alignment mark 37 based on the captured image of the imaging means 4.
- the TFT substrate 10 moves a certain distance after it is detected that it matches the center of
- the laser light source 2 is turned on for a certain period of time and the laser light 14 is irradiated onto the microlens array 3.
- the image processing unit 21, the memory 22, the calculation unit 23, the transport unit drive controller 24, the alignment unit drive controller 25, the laser light source drive controller 26, and the control unit 27 are provided. I have.
- the image processing unit 21 performs real-time processing on the one-dimensional image picked up by the image pickup unit 4 to detect a luminance change in the arrangement direction (major axis direction) of the plurality of light receiving elements of the image pickup unit 4, and the TFT substrate.
- the substrate-side alignment reference position set for the ten data lines 7 and the lens-side alignment reference position of the microlens array 3 are detected, and the edge of the gate line 8 of the TFT substrate 10 is detected based on the captured image of the imaging means 4. It is detected that the alignment mark 37 is matched with the center.
- the memory 22 also includes, for example, the distance D between the lens array 17a located on the top side in the substrate transport direction of the second lens group 17 of the microlens array 3 and the imaging means 4, the first lens of the microlens array 3.
- the distance D between the lens array 17a located on the top side in the substrate transport direction of the second lens group 17 of the microlens array 3 and the imaging means 4, the first lens of the microlens array 3.
- calculation unit 23 calculates the amount of positional deviation between the substrate-side alignment reference position of the TFT substrate 10 detected by the image processing unit 21 and the lens-side alignment reference position of the microlens array 3.
- the transfer means drive controller 24 controls the drive of the transfer means with pulses having a constant period so that the TFT substrate 10 is transferred at a constant speed.
- the alignment unit drive controller 25 reads the amount of positional deviation between the substrate-side alignment reference position of the TFT substrate 10 calculated by the calculation unit 23 and the lens-side alignment reference position of the microlens array 3 from the memory 22. Compared with a reference value, the alignment means 5 is driven so that the two match, and the microlens array 3 is moved in a direction crossing the substrate transport direction.
- the laser light source drive controller 26 controls turning on and off of the laser light source 2. And the control part 27 is integrated and controlled so that each said component may operate
- the operation of the laser annealing apparatus configured as described above will be described.
- the value and the distance or elapsed time that the TFT substrate 10 moves from when the edge of the gate line 8 of the TFT substrate 10 is detected to when the laser light source 2 is turned on are stored in the memory 22.
- the TFT substrate 10 on which the amorphous silicon film is formed so as to cover the entire surface is positioned so that the data line 7 is parallel to the transport direction with the amorphous silicon film facing upward and placed on the upper surface of the transport means 1.
- the transfer means 1 When the start switch is turned on, the transfer means 1 is pulse-controlled by the transfer means drive controller 24 in a state where the TFT substrate 10 is floated on the upper surface of the transfer means 1 by a pulse control of the TFT substrate 10 as shown in FIG. Is conveyed at a constant speed in the direction of arrow A shown in FIG.
- the TFT substrate 10 reaches above the image pickup unit 4, the data line 7 and the gate line 8 formed on the surface of the TFT substrate 10 through the TFT substrate 10 by the image pickup unit 4 and the alignment mark of the microlens array 3. 37 is imaged simultaneously. Then, the one-dimensional image picked up by the image pickup means 4 and sequentially input is processed in real time by the image processing unit 21, and the edge 8a of the gate line 8 of the TFT substrate 10 is aligned with the alignment mark of the microlens array 3 as shown in FIG.
- pulses of the transport means drive controller 24 are counted based on the detection time, and measurement of the movement distance of the TFT substrate 10 is started, or the detection time is used as a reference. Start counting elapsed time.
- the coincidence between the edge 8a of the gate line 8 of the TFT substrate 10 and the center of the alignment mark 37 of the microlens array 3 is the gate between the parallel thin lines 37b on both sides of the alignment mark 37 as shown in FIG.
- the edge 8a of the line 8 can be detected by detecting the moment when the left and right dimensions 8b and 8c become equal in the substrate transport direction obtained by being divided by the slanted thin line 37a.
- step S1 a one-dimensional image picked up by the image pickup unit 4 is processed in real time by the image processing unit 21, and a plurality of data is obtained by luminance change in the arrangement direction (major axis direction) of the plurality of light receiving elements of the image pickup unit 4.
- the position of the right edge of the line 7 in the substrate transport direction and the center position (lens side alignment reference position) of the oblique thin line 37a of the alignment mark 37 of the microlens array 3 are detected.
- substrate conveyance direction among the detected right edge parts of the some data line 7 is specified as a board
- step S ⁇ b> 2 a position shift amount between the specified substrate side alignment reference position and the lens side alignment reference position is calculated by the calculation unit 23, and the position shift amount and the alignment reference value stored in the memory 22 are calculated. And compare. Then, the alignment means drive controller 25 drives the alignment means 5 so that they match, and the microlens array 3 is moved in a direction intersecting the substrate transport direction to align the microlens 15 and the TFT formation region 9. To do.
- step S3 after it is detected that the edge 8a of the gate line 8 located on the leading side in the transport direction matches the center of the alignment mark 37, the TFT substrate 10 moves a certain distance or after a certain time, As shown in FIG. 7A, when one row of TFT formation regions 9 positioned on the leading side in the transport direction reaches directly below the lens row 17a on the leading side in the transport direction of the second lens group 17 of the microlens array 3, The light source drive controller 26 is driven to turn on the laser light source 2 for a certain period of time, the laser light 14 is irradiated to the microlens array 3, and the amorphous silicon film in the TFT formation region 9 corresponding to the second lens group 17 is annealed. . Specifically, as shown in FIG.
- the laser beam 14 is focused on the TFT formation region 9 on the gate electrode 30 by the microlens 15, and the amorphous silicon film 28 in the TFT formation region 9 is annealed. . That is, the irradiation with the laser beam 14 melts the amorphous silicon film 28 in the TFT formation region 9 as shown in FIG. Recrystallization is performed to form a polysilicon film. At this time, the irradiation position of the laser beam 14 by the first lens group 16 is outside the region where the pixel 11 is formed, and is so-called idle shot.
- reference numeral 29 is a glass substrate
- reference numeral 31 is a SiN insulating film.
- step S4 the conveyance means 1 is pulse-controlled by the conveyance means drive controller 24, and the TFT substrate 10 is positioned at the leading side in the substrate conveyance direction of the first lens group 16 and the second lens group 17 of the microlens array 3, respectively.
- the laser light source drive controller 26 turns on the laser light source 2 for a predetermined time.
- all the TFT formation regions 9 set on the TFT substrate 10 are sequentially annealed to become polysilicon, and a polysilicon film 32 (see FIG. 9) is formed.
- 7B shows a state in which the TFT substrate 10 has moved by a distance 3L from the state of FIG. 7A, and the TFT formation region 9 between the TFT formation regions 9 corresponding to the second lens group 17 is shown.
- a state where the first lens group 16 is annealed is shown.
- the alignment between the microlens 15 of the microlens array 3 and the TFT formation region 9 of the TFT substrate 10 in the above step S3 is always performed even while the TFT substrate 10 is being transported. Therefore, even if the TFT substrate 10 is conveyed while swinging left and right, the microlens 15 can be positioned on the TFT formation region 9 following the movement of the substrate. Thereby, only the amorphous silicon film 28 in the TFT forming region 9 can be surely annealed to form the polysilicon film 32.
- the annealing of the TFT substrate 10 is finished, as shown in FIG. 9A, after a resist mask 33 having a fixed shape is formed on the polysilicon film 32 on the gate electrode 30, as shown in FIG. 9B. Further, the amorphous silicon film 28 and the polysilicon film 32 around the resist mask 33 and the SiN insulating film 31 formed thereunder are etched and removed by a known etching technique. Then, by removing the resist mask 33, the TFT substrate 10 in which the polysilicon film 32 having a fixed shape is formed on the gate electrode 30 as shown in FIG. Thereafter, if a source electrode and a drain electrode are formed on the polysilicon film 32, a low-temperature polysilicon thin film transistor substrate is completed.
- the TFT formation region 9 of the TFT substrate 10 having the amorphous silicon film 28 formed on the entire surface is annealed to become polysilicon, and then the polysilicon film 32 having a predetermined shape in the TFT formation region 9 is left.
- the present invention is not limited to this, and after removing the unnecessary film around the amorphous silicon film 28 having a fixed shape in the TFT formation region 9, The remaining amorphous silicon film 28 may be annealed to form polysilicon.
- the image pickup means 4 is provided on the transport means side, and the data lines 7 and gate lines 8 on the substrate surface and the alignment marks 37 of the microlens array 3 are picked up through the substrate from the back side of the TFT substrate 10.
- the present invention is not limited to this, and the image pickup means 4 is provided above the transport means 1 and picks up the data lines 7 and gate lines 8 on the substrate surface and the alignment marks 37 of the microlens array 3 from above. You may make it do.
- a plurality of microlenses 15 are arranged in parallel in the direction in which the microlens array 3 intersects the substrate transport direction at a pitch (2W) twice the arrangement pitch W of the TFT formation regions 9 in the same direction. Subsequent lens rows are formed by being shifted by W in the parallel arrangement direction of the plurality of microlenses 15 so as to complement each other between the microlenses 15 of the lens row located on the front side in the substrate transport direction.
- the present invention is not limited to this, and at least one row in which a plurality of microlenses 15 are arranged in parallel at the same pitch W as the arrangement pitch W of the TFT formation regions 9 in the same direction in the direction intersecting the substrate transport direction. It may be configured with a lens array.
- the alignment unit 5 moves the microlens array 3 in a direction intersecting the substrate transport direction.
- the present invention is not limited to this, and the microlens array 3, the imaging unit 4, May be moved together.
- the microlens array 3 is formed by one lens array having substantially the same length as the entire width of the TFT substrate 10 intersecting the substrate transport direction.
- the present invention is not limited to this. Instead, the microlens array 3 may be formed by alternately arranging a plurality of unit lens arrays having a length shorter than the width of the TFT substrate 10 to have the same length as the width. In this case, one imaging means 4 may be provided for each unit lens array.
- the substrate is the TFT substrate 10
- the present invention is not limited to this and may be a semiconductor substrate.
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Abstract
Description
先ず、テンキー等の入力手段を操作して、マイクロレンズアレイ3の第2のレンズ群17の基板搬送方向先頭側に位置するレンズ列17aと撮像手段4との間の距離D、マイクロレンズアレイ3の第1のレンズ群16及び第2のレンズ群17の夫々基板搬送方向先頭側に位置するレンズ列16a,17a間の距離3L、TFT基板10とマイクロレンズアレイ3を位置合わせするためのアライメント基準値、及びTFT基板10のゲート線8の縁部が検出されてからレーザ光源2を点灯させるまでにTFT基板10が移動する距離又は経過時間等をメモリ22に記憶する。
先ず、ステップS1においては、撮像手段4で撮像された一次元画像を画像処理部21でリアルタイム処理し、撮像手段4の複数の受光素子の並び方向(長軸方向)における輝度変化により複数のデータ線7の基板搬送方向に向かって右側縁部の位置、及びマイクロレンズアレイ3のアライメントマーク37の斜めの細線37aの中心位置(レンズ側アライメント基準位置)を検出する。そして、検出された複数のデータ線7の右側縁部のうちから、例えば基板搬送方向に向かって左端のデータ線7の右側縁部の位置を基板側アライメント基準位置として特定する。
2…レーザ光源
3…マイクロレンズアレイ
4…撮像手段
5…アライメント手段
6…制御手段
7…データ線
8…ゲート線
9…TFT形成領域
10…TFT基板
14…レーザ光
15…マイクロレンズ
28…アモルファスシリコン膜
Claims (6)
- 基板上に所定の配列ピッチでマトリクス状に設定された複数の薄膜トランジスタ(以下、「TFT」という)形成領域にレンズアレイの複数のレンズによりレーザ光を集光して、前記各TFT形成領域のアモルファスシリコン膜をアニール処理するレーザアニール方法であって、
前記マトリクス状に設定されたTFT形成領域の縦横いずれか一方の配列方向に前記基板を搬送しながら撮像手段により前記基板表面を撮像し、該撮像画像に基づいて基板表面に予め設定されたアライメントの基準位置を検出し、
前記複数のTFT形成領域に対応して前記基板の搬送方向と交差する方向に複数のレンズを配置した少なくとも一列のレンズアレイを前記基板の搬送方向と交差方向に移動して、前記レンズアレイのレンズと前記基板のTFT形成領域とを前記アライメント基準位置を基準にして位置合わせし、
前記基板が移動して前記TFT形成領域が前記レンズアレイの対応レンズの真下に到達したときに前記レンズアレイに前記レーザ光を照射する、
ことを特徴とするレーザアニール方法。 - 前記レンズアレイは、前記基板の搬送方向と交差する方向に、同方向の前記TFT形成領域の配列ピッチの2以上の整数倍のピッチでレンズを並設した複数列のレンズ列から成り、前記基板の搬送方向先頭側に位置する前記レンズ列の各レンズ間を補完するように後続のレンズ列を前記複数のレンズの前記並設方向に予め定められた寸法だけずらして形成した構成を有することを特徴とする請求項1記載のレーザアニール方法。
- 前記基板は、縦横に配線が形成され、該縦横の配線の交差部に前記TFT形成領域が設定されたTFT基板であり、
前記アライメント基準位置は、前記TFT基板の搬送方向に平行な配線の縁部に設定されたことを特徴とする請求項1又は2記載のレーザアニール方法。 - 基板上に所定の配列ピッチでマトリクス状に設定された複数のTFT形成領域にレンズアレイの複数のレンズによりレーザ光を集光し、前記各TFT形成領域のアモルファスシリコン膜をアニール処理するレーザアニール装置であって、
前記マトリクス状に設定されたTFT形成領域の縦横いずれか一方の配列方向に前記基板を一定速度で搬送する搬送手段と、
前記レーザ光を放射するレーザ光源と、
前記基板面に平行な面内にて前記基板の搬送方向と交差する方向に、同方向の前記複数のTFT形成領域に対応させて並設された少なくとも一列の複数の集光レンズから成るレンズアレイと、
前記レンズアレイによるレーザ光の集光位置に対して前記基板の搬送方向と反対方向に一定距離はなれた位置を撮像位置とし前記基板表面を撮像する撮像手段と、
前記レンズアレイを前記基板の搬送方向と交差する方向に移動させて前記レンズアレイのレンズと前記基板のTFT形成領域との位置合わせをするアライメント手段と、
前記各構成要素を駆動制御する制御手段と、を備え、
前記制御手段は、搬送中の前記基板表面を撮像して前記撮像手段から逐次入力する画像を処理して前記基板表面に予め設定されたアライメントの基準位置を検出し、該アライメント基準位置を基準にして前記レンズアレイのレンズと前記基板のTFT形成領域との位置合わせをさせ、前記基板が移動して前記TFT形成領域が前記レンズアレイの対応レンズの真下に到達したときに前記レーザ光源から前記レンズアレイに向けてレーザ光を放射させるように制御することを特徴とするレーザアニール装置。 - 前記レンズアレイは、前記基板の搬送方向と交差する方向に、同方向の前記TFT形成領域の配列ピッチの2以上の整数倍のピッチでレンズを並設した複数列のレンズ列から成り、前記基板の搬送方向先頭側に位置する前記レンズ列の各レンズ間を補完するように後続のレンズ列を前記複数のレンズの前記並設方向に予め定められた寸法だけずらして形成した構成を有することを特徴とする請求項4記載のレーザアニール装置。
- 前記基板は、縦横に複数の配線が形成され、該複数の配線の交差部に前記TFT形成領域が設定されたTFT基板であり、
前記アライメント基準位置は、前記TFT基板の搬送方向に平行な配線の一方の縁部に設定されたことを特徴とする請求項4又は5記載のレーザアニール装置。
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Also Published As
Publication number | Publication date |
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JP2010283073A (ja) | 2010-12-16 |
CN102449740A (zh) | 2012-05-09 |
TWI492306B (zh) | 2015-07-11 |
JP5471046B2 (ja) | 2014-04-16 |
US9687937B2 (en) | 2017-06-27 |
TW201110236A (en) | 2011-03-16 |
US9012338B2 (en) | 2015-04-21 |
US20120077351A1 (en) | 2012-03-29 |
US20160279736A9 (en) | 2016-09-29 |
KR20120027243A (ko) | 2012-03-21 |
KR101688129B1 (ko) | 2016-12-20 |
CN102449740B (zh) | 2014-05-21 |
US20150258630A1 (en) | 2015-09-17 |
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