WO2010131575A1 - 接着剤組成物、回路部材接続用接着剤シート及び半導体装置の製造方法 - Google Patents

接着剤組成物、回路部材接続用接着剤シート及び半導体装置の製造方法 Download PDF

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WO2010131575A1
WO2010131575A1 PCT/JP2010/057472 JP2010057472W WO2010131575A1 WO 2010131575 A1 WO2010131575 A1 WO 2010131575A1 JP 2010057472 W JP2010057472 W JP 2010057472W WO 2010131575 A1 WO2010131575 A1 WO 2010131575A1
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adhesive
parts
film
adhesive composition
mass
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PCT/JP2010/057472
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English (en)
French (fr)
Japanese (ja)
Inventor
大久保　恵介
永井　朗
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日立化成工業株式会社
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Priority to KR1020117029354A priority Critical patent/KR101136599B1/ko
Publication of WO2010131575A1 publication Critical patent/WO2010131575A1/ja

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    • H—ELECTRICITY
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    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
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Definitions

  • the present invention relates to an adhesive composition, an adhesive sheet for connecting a circuit member using the same, and a method for manufacturing a semiconductor device.
  • a face-down bonding method in which a semiconductor chip is directly connected to a circuit board is known as a semiconductor chip mounting technique.
  • a solder bump is formed on the electrode part of the semiconductor chip and soldered to the electrode of the circuit board, or a conductive adhesive is applied to the protruding electrode provided on the semiconductor chip to connect with the electrode of the circuit board.
  • a conductive adhesive is applied to the protruding electrode provided on the semiconductor chip to connect with the electrode of the circuit board.
  • a semiconductor device manufactured by the face-down bonding method When exposed to various environments, a semiconductor device manufactured by the face-down bonding method generates stress at the connection interface due to a difference in thermal expansion coefficient between the connected chip and the substrate, and thus connection reliability is likely to decrease. Has the problem. For this reason, in order to alleviate the stress at the connection interface, the gap between the chip and the substrate is filled with an underfill material such as an epoxy resin.
  • the underfill material filling method includes a method of injecting a low viscosity liquid resin after connecting the chip and the substrate, and a method of mounting the chip after providing the underfill material on the substrate. Furthermore, the latter method includes a method of applying a liquid resin and a method of attaching a film-like resin.
  • the method using a film-like resin can easily give an optimum amount of resin by adjusting the thickness of the film, but requires a step of sticking a film-like resin called a temporary pressure bonding step to a substrate.
  • a reel-shaped adhesive tape that is slit to a width larger than the target chip width is prepared, and the adhesive tape on the base material is cut according to the chip size. Thermocompression bonding is performed on the substrate at a temperature that does not react.
  • provisional pressure bonding to secure the yield. This can be done by making the film larger than the chip size. For this reason, in this method, it is necessary to secure an extra distance from adjacent components and a mounting area, and it is difficult to support high-density mounting.
  • a method using a chip with a film adhesive has been studied as one of high-density mounting technologies.
  • a wafer is prepared by preparing a wafer to which a film-like adhesive is attached, grinding the back surface of the wafer, and then cutting the wafer together with the adhesive into chips.
  • a method of manufacturing a semiconductor device by manufacturing a chip with a film adhesive to which an adhesive having the same size as the chip size is attached and mounting the chip on a circuit board.
  • JP 2006-049482 A Japanese Patent No. 2833111
  • the film adhesive in the above method goes through a wafer sticking process, a wafer back grinding process, a dicing process, and a flip chip bonding process.
  • the film adhesive is required to have stickability that can sufficiently suppress the occurrence of peeling and voids when sticking to a wafer.
  • the film adhesive is required to have excellent wafer back surface grindability, that is, to have adhesiveness and adhesiveness that can sufficiently prevent the occurrence of breakage and cracks due to grinding.
  • the film adhesive is required to have a embeddability in which voids are unlikely to occur when connected to a circuit member such as a semiconductor element mounting member.
  • the adhesive layer of the wafer processing tape described in the above-mentioned Patent Document 1 is likely to have voids during high-temperature pressure bonding because the film itself is too soft, and the reliability may be adversely affected due to insufficient embedding.
  • the adhesive film described in Patent Document 2 does not necessarily have sufficient embeddability in the flip chip bonding process, and in particular, voids are generated at the time of thermocompression bonding at 200 ° C. or higher when performing solder bonding simultaneously. was there.
  • the present invention has been made in view of the above circumstances, and it is possible to form a film-like adhesive satisfying all of the stickability to a semiconductor wafer, wafer back surface grindability, and embedding at the time of flip chip bonding. It is an object of the present invention to provide a possible adhesive composition, an adhesive sheet for connecting a circuit member using the same, and a method for manufacturing a semiconductor device.
  • the adhesive composition of the present invention that solves the above problems includes (A) a thermoplastic resin having a weight average molecular weight of 20,000 to 100,000, (B) an epoxy resin, (C) a radiation polymerizable compound, ( D) a photoinitiator and (E) a microcapsule type curing accelerator.
  • the film-like adhesive satisfying all of the adhesiveness to the semiconductor wafer, the wafer back surface grindability, and the embedding property at the time of flip chip bonding. Can be formed.
  • the present inventors consider the reason why the above effect can be obtained by the adhesive composition of the present invention as follows. That is, by combining the above components (A) to (E), a film having embedding at a relatively low temperature required in the wafer attaching process and adhesiveness and adhesion required in the wafer back grinding process is formed. However, fast curability can be obtained by blending the epoxy resin and the microcapsule type curing accelerator, and fluidity during heating by radiation irradiation before flip chip bonding by blending the radiation polymerizable compound and the photoinitiator. The present inventors consider that good embedding at the time of bonding has been achieved by controlling the above.
  • the adhesive composition of the present invention comprises 100 parts by weight of component (A), 5 to 500 parts by weight of component (B), 5 to 200 parts by weight of component (C), and 0. It preferably contains 1 to 30 parts by mass and 50 to 300 parts by mass of component (E).
  • the adhesive composition of the present invention can further comprise (F) a methylol compound having one phenolic hydroxyl group in one molecule.
  • F a methylol compound having one phenolic hydroxyl group in one molecule.
  • the adhesive composition of the present invention can be used for adhering circuit members by interposing them between circuit members facing each other.
  • the circuit sheet connecting adhesive sheet of the present invention comprises a supporting base material and an adhesive layer provided on the supporting base material and made of the adhesive composition of the present invention.
  • the adhesive sheet for connecting circuit members of the present invention can be used for interposing an adhesive layer between opposing circuit members and bonding the circuit members together.
  • the present invention also provides a semiconductor wafer having a plurality of circuit electrodes on one of the main surfaces, and the adhesive of the adhesive sheet for connecting a circuit member of the present invention on the side of the semiconductor wafer on which the circuit electrodes are provided.
  • a step of pasting a layer, a step of thinning the semiconductor wafer by grinding the side opposite to the side on which the circuit electrodes of the semiconductor wafer are provided, a step of irradiating the adhesive layer with radiation, and a thinned semiconductor The wafer and the adhesive layer irradiated with radiation are diced into a semiconductor element with a film adhesive, and the semiconductor element with the film adhesive and the semiconductor element mounting support member are attached with the film adhesive.
  • a method of manufacturing a semiconductor device comprising a step of bonding via a film-like adhesive of a semiconductor element.
  • the adhesive composition which enables formation of the film adhesive which satisfies all the adhesiveness to a semiconductor wafer, wafer back surface grindability, and the embedding property at the time of die bonding, and it,
  • the adhesive sheet for circuit member connection using this can be provided.
  • the manufacturing method of the semiconductor device using said adhesive sheet for circuit member connection can be provided, and, thereby, the semiconductor device excellent in connection reliability can be provided.
  • FIG. 1 is a schematic cross-sectional view showing a preferred embodiment of an adhesive sheet for connecting circuit members according to the present invention. It is a schematic cross section for explaining one embodiment of a manufacturing method of a semiconductor device concerning the present invention. It is a schematic cross section for explaining one embodiment of a manufacturing method of a semiconductor device concerning the present invention. It is a schematic cross section for explaining one embodiment of a manufacturing method of a semiconductor device concerning the present invention. It is a schematic cross section for explaining one embodiment of a manufacturing method of a semiconductor device concerning the present invention. It is a schematic cross section for explaining one embodiment of a manufacturing method of a semiconductor device concerning the present invention. It is a schematic cross section for explaining one embodiment of a manufacturing method of a semiconductor device concerning the present invention.
  • FIG. 1 is a schematic cross-sectional view showing a preferred embodiment of an adhesive sheet for connecting circuit members according to the present invention.
  • An adhesive sheet 10 for connecting circuit members shown in FIG. 1 includes a support base 3, an adhesive layer 2 provided on the support base 3 and made of the adhesive composition of the present invention, and an adhesive layer 2. And a protective film 1 to be coated.
  • the adhesive composition of the present invention comprises (A) a thermoplastic resin having a weight average molecular weight of 20,000 to 100,000, (B) an epoxy resin, (C) a radiation polymerizable compound, and (D) a photoinitiator. And (E) a microcapsule type curing accelerator.
  • thermoplastic resin having a weight average molecular weight of 20,000 or more and 100,000 or less is used, for example, to impart coating properties to the adhesive composition.
  • Specific examples include, for example, polyester, polyurethane, polyvinyl butyral, polyarylate, polymethyl methacrylate, acrylic rubber, polystyrene, phenoxy resin, NBR, SBR, polyimide, silicone-modified resin (acrylic silicone, epoxy silicone, polyimide silicone), and the like.
  • a thermoplastic resin is mentioned. These can be used alone or in combination of two or more.
  • a phenoxy resin is preferable from the viewpoint of increasing the Tg which makes it easy to obtain high reliability after bonding.
  • As the phenoxy resin FX-293, YP-70 manufactured by Toto Kasei Co., Ltd. can be used.
  • the component (A) is preferably incompatible with the epoxy resin (B) from the viewpoint of reflow resistance.
  • compatibility is not determined only by the characteristics of the component (A), a combination in which both the components (A) and (B) are not compatible is selected.
  • the weight average molecular weight of the component (A) is from 20,000 to 100,000, preferably from 30,000 to 95,000, more preferably from 40,000 to 90,000, and more preferably from 50,000 to 8 It is particularly preferred that it is 10,000 or less. When the weight average molecular weight is within this range, it becomes easy to satisfactorily balance the strength and flexibility of the adhesive layer made into a sheet or film, and the flowability of the adhesive layer is improved. The circuit fillability (embeddability) can be sufficiently secured.
  • the weight average molecular weight means a value measured from a gel permeation chromatograph (GPC) using a standard polystyrene calibration curve according to the conditions shown in Table 1.
  • the epoxy resin is not particularly limited as long as it is cured and has an adhesive action.
  • epoxy resins described in an epoxy resin handbook (Shinho Masaki, edited by Nikkan Kogyo Shimbun) are widely used. be able to.
  • a bifunctional epoxy resin such as a bisphenol A type epoxy, a novolac type epoxy resin such as a phenol novolac type epoxy resin or a cresol novolac type epoxy resin, a trisphenolmethane type epoxy resin, or the like can be used.
  • a polyfunctional epoxy resin such as a polyfunctional epoxy resin, a glycidyl amine type epoxy resin, a heterocyclic ring-containing epoxy resin, or an alicyclic epoxy resin, can be applied.
  • Examples thereof include YD8125, YDF8170, and the like.
  • Examples of the phenol novolac type epoxy resin include Epicoat 152,154 manufactured by Japan Epoxy Resin Co., Ltd., EPPN-201 manufactured by Nippon Kayaku Co., Ltd., DEN-438 manufactured by Dow Chemical Co., Ltd., and o-cresol novolac type epoxy resin.
  • Examples include EOCN-102S, 103S, 104S, 1012, 1025, 1027 manufactured by Nippon Kayaku Co., Ltd., YDCN701, 702, 703, 704 manufactured by Toto Kasei Co., Ltd., and the like.
  • Examples of the polyfunctional epoxy resin include Epon 1031S and 1032-H60 manufactured by Japan Epoxy Resin Co., Ltd., Araldite 0163 manufactured by Ciba Specialty Chemicals, and Denacol EX-611, 614, 614B, 622, 512, and 521 manufactured by Nagase Chemical Co., Ltd. 421, 411, 321 and the like.
  • amine type epoxy resin Epicoat 604 manufactured by Japan Epoxy Resin Co., Ltd., YH-434 manufactured by Tohto Kasei Co., Ltd., TETRAD-X, TETRAD-C manufactured by Mitsubishi Gas Chemical Co., Ltd., ELM- manufactured by Sumitomo Chemical Co., Ltd. 120 etc. are mentioned.
  • heterocyclic ring-containing epoxy resin include ERL4234, 4299, 4221, 4206 and the like manufactured by UCC, such as Araldite PT810 manufactured by Ciba Specialty Chemicals. These epoxy resins can be used alone or in combination of two or more.
  • a bisphenol A type epoxy resin and a phenol novolac type epoxy resin from the viewpoint of imparting high adhesive strength.
  • the content of the component (B) in the adhesive composition according to the present invention is preferably 5 to 500 parts by mass, more preferably 50 to 500 parts by mass with respect to 100 parts by mass of the component (A). 75 to 400 parts by mass is even more preferable, and 100 to 300 parts by mass is particularly preferable.
  • content of (B) component exists in said range, the elasticity modulus of the adhesive bond layer formed in the film form and the flow property suppression at the time of shaping
  • Examples of the radiation polymerizable compound include compounds that can be cross-linked by irradiation with radiation. Specifically, pentaerythritol triacrylate, dipentaerythritol hexaacrylate, dipentaerythritol pentaacrylate, trimethylolpropane triacrylate, isocyanuric acid EO-modified triacrylate, ditrimethylolpropane tetraacrylate, pentaerythritol tetraacrylate, dicyclopentenyloxy Examples thereof include acrylates and methacrylates such as ethyl acrylate and 2,2-bis [4- (methacryloxydiethoxy) phenyl] propane.
  • the content of the component (C) in the adhesive composition according to the present invention is preferably 5 to 200 parts by mass with respect to 100 parts by mass of the component (A).
  • the content is 5 parts by mass or more, the polymerization reaction of the radiation-polymerizable compound by irradiation with radiation such as ultraviolet rays can be sufficiently advanced, and the fluidity during high-temperature pressure bonding can be suppressed.
  • the blending amount exceeds 200 parts by mass, cross-linking occurs excessively, and it becomes difficult to obtain the fluidity necessary for pressure bonding.
  • the blending amount is more preferably 10 to 150 parts by weight, and particularly preferably 20 to 100 parts by weight.
  • the photoinitiator a compound capable of curing the component (C) by irradiation with radiation may be mentioned.
  • the component (D) include benzophenones such as 4,4′-diethylaminobenzophenone and 4,4′-dimethylaminobenzophenone, 1-hydroxy-cyclohexyl phenyl ketone, 2-methyl-1 [4- ( Ketones such as methylthio) phenyl] -2-morpholinopropan-1-one, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1, and bis (2,4,4) 6-trimethylbenzoyl) -phenylphosphine oxide.
  • Irg-184 and Irg-819 manufactured by Ciba Specialty Chemicals are preferred because of their solubility in solvents and stability during heating.
  • a photoinitiator can be used individually by 1 type or in combination of 2 or more types.
  • the content of the component (D) in the adhesive composition according to the present invention is preferably 0.1 to 30 parts by mass with respect to 100 parts by mass of the component (A). If the content is less than 0.1 parts by mass, the unreacted component (D) tends to remain. In this case, voids increase at the time of high-temperature pressure bonding, and the embedding property tends to be adversely affected. On the other hand, when the content exceeds 30 parts by mass, it is difficult to sufficiently increase the molecular weight by the polymerization reaction, and there is a tendency that many low molecular weight components exist. In this case, the low molecular weight component may affect the fluidity during heating. Considering these points, the content is more preferably 0.5 to 25 parts by mass, and particularly preferably 1 to 20 parts by mass.
  • a polymer material such as polyurethane, polystyrene, gelatin and polyisocyanate
  • an inorganic material such as calcium silicate and zeolite
  • a metal thin film such as nickel or copper.
  • the curing accelerator included in the capsule include imidazole and tetraphenylphosphonium tetraphenylborate. Of these, imidazole is preferred in terms of storage stability and fast curability.
  • the average particle size of the microcapsules is preferably 10 ⁇ m or less, more preferably 5 ⁇ m or less from the viewpoint of film formability. Moreover, it is preferable that the lower limit of a particle size is 2 micrometers or more from a viewpoint of acquiring storage stability more reliably.
  • (E) Component can use a commercial item, for example, Asahi Kasei Chemicals Corporation HP-3941, HP-4032, etc. are mentioned.
  • the content of the component (E) in the adhesive composition according to the present invention is preferably 50 to 300 parts by mass with respect to 100 parts by mass of the component (A).
  • the content is less than 50 parts by mass, the curing reaction tends to be difficult to proceed.
  • the content exceeds 300 parts by mass, voids are caused by the influence of the liquid component contained in the microcapsule type curing accelerator. It tends to occur easily.
  • the content is more preferably 75 to 250 parts by mass, and even more preferably 100 to 200 parts by mass.
  • the adhesive composition according to the present invention may further contain (F) a methylol compound having one phenol hydroxyl group in one molecule.
  • F a methylol compound having one phenol hydroxyl group in one molecule.
  • the component (F) has a methylol group on both sides of the phenolic hydroxyl group from the viewpoint of the design that the reaction is suppressed and the activity is maintained at the time of film formation and the activity is exhibited after high temperature pressure bonding and then reacted and taken into the system.
  • the component (F) is preferably a methylol compound represented by the following general formula (1).
  • X represents an alkyl group having 1 to 10 carbon atoms, and when it has 2 or more carbon atoms and has a methylene group, at least one of the methylene groups is —O—, —NH—, —S—. , —CO—, —OCO— or —COO—, and when it has 3 or more carbon atoms and has a methine group (—CH ⁇ ), at least one of the methine groups is substituted with a nitrogen atom. May be.
  • a methylol compound in which X in the general formula (1) is a linear or branched alkyl group having 1 to 10 carbon atoms.
  • a methylol compound in which X is a methyl group or the like are preferable to use.
  • Specific examples include trade names: DML-POP and DML-PC manufactured by Honshu Chemical Co., Ltd.
  • the content of the component (F) in the adhesive composition according to the present invention is 2 to 30% by mass based on the total amount of the adhesive composition from the viewpoint of obtaining good flux activity while maintaining sufficient embedding. Preferably there is. If the content is less than 2% by mass, sufficient flux activity may not be expressed. On the other hand, if it exceeds 30% by mass, voids tend to be generated.
  • An inorganic filler can be added to the adhesive composition according to the present invention for the purpose of improving the handleability of the formed adhesive layer, improving the thermal conductivity, adjusting the melt viscosity, and imparting thixotropic properties.
  • the inorganic filler is not particularly limited.
  • aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, boron nitride examples thereof include crystalline silica and amorphous silica. These fillers can be used alone or in combination of two or more. Further, the shape of the filler is not particularly limited.
  • aluminum oxide, aluminum nitride, boron nitride, crystalline silica, amorphous silica, and the like are preferable for improving thermal conductivity.
  • aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, crystallinity Silica, amorphous silica and the like are preferable.
  • the compounding amount of the inorganic filler is preferably 1 to 100 parts by mass with respect to 100 parts by mass of the total amount of the adhesive composition. If the blending amount is less than 1 part by mass, the effect of addition tends not to be sufficiently obtained. If it exceeds 100 parts by mass, the storage elastic modulus of the adhesive layer is increased, the adhesiveness is lowered, and the electricity due to voids remains. There is a tendency that problems such as deterioration of characteristics tend to occur.
  • various coupling agents can be added to the adhesive composition according to the present invention in order to improve interfacial bonding between different materials.
  • the coupling agent include silane, titanium, and aluminum.
  • silane coupling agent examples include ⁇ -methacryloxypropyltrimethoxysilane, ⁇ -methacryloxypropylmethyldimethoxysilane, ⁇ -mercaptopropyltrimethoxysilane, ⁇ -mercaptopropyltriethoxysilane, and 3-aminopropylmethyl. Examples thereof include diethoxysilane, 3-ureidopropyltriethoxysilane, and 3-ureidopropyltrimethoxysilane. These can be used alone or in combination of two or more. Commercial products such as A-189 and A-1160 manufactured by Nippon Unicar Co., Ltd. can also be used.
  • the blending amount of the coupling agent is preferably 0.01 to 10 parts by mass with respect to 100 parts by mass of component (A), from the viewpoint of the effect of addition, heat resistance and cost.
  • an ion scavenger can be further added to the adhesive composition according to the present invention for the purpose of adsorbing ionic impurities and improving the insulation reliability during moisture absorption.
  • ion-trapping agents include triazine thiol compounds and bisphenol-based reducing agents, such as compounds known as copper damage inhibitors to prevent copper ionization and dissolution, zirconium-based, and antimony bismuth-based magnesium.
  • examples include inorganic ion adsorbents such as aluminum compounds.
  • the compounding amount of the ion scavenger is preferably 0.1 to 10 parts by mass with respect to 100 parts by mass of the component (A) from the viewpoint of the effect of addition, heat resistance, cost, and the like.
  • the adhesive composition can be made to contain conductive particles to form an anisotropic conductive adhesive film (ACF).
  • ACF anisotropic conductive adhesive film
  • the adhesive layer 2 is formed by dissolving or dispersing the above-described adhesive composition according to the present invention in a solvent to form a varnish, applying the varnish on the support substrate 3, and removing the solvent by heating. Can do. Or it can form by apply
  • the solvent to be used is not particularly limited, but is preferably determined in consideration of the volatility when forming the adhesive layer and the solubility when preparing the varnish.
  • a solvent having a relatively low boiling point such as methanol, ethanol, 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, methyl ethyl ketone, acetone, methyl isobutyl ketone, toluene, and xylene forms an adhesive layer. It is preferable in that the curing of the adhesive layer is difficult to proceed.
  • a solvent having a relatively high boiling point such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone, and cyclohexanone. These solvents can be used alone or in combination of two or more.
  • the support substrate 3 examples include plastic films such as a polytetrafluoroethylene film, a polyethylene film, a polypropylene film, a polymethylpentene film, and polyethylene terephthalate.
  • plastic films such as a polytetrafluoroethylene film, a polyethylene film, a polypropylene film, a polymethylpentene film, and polyethylene terephthalate.
  • commercially available products include polyethylene terephthalate films such as “A-31” manufactured by Teijin DuPont Films, Inc.
  • the support base 3 may be a mixture of two or more selected from the above materials, or a multilayer of the above film.
  • the thickness of the support substrate 3 is not particularly limited, but is preferably 5 to 250 ⁇ m. If the thickness is less than 5 ⁇ m, the support substrate may be cut during grinding (back grinding) of the semiconductor wafer, and if it is more than 250 ⁇ m, it is not economical, which is not preferable.
  • the support substrate 3 preferably has high light transmittance, and specifically, the minimum light transmittance in the wavelength region of 500 to 800 nm is preferably 10% or more.
  • the support base material 3 one having a pressure-sensitive adhesive layer provided on the support base material can be used.
  • the pressure-sensitive adhesive to be provided it is possible to use a product obtained by synthesizing an acrylic copolymer by a solution polymerization method using 2-ethylhexyl acrylate and methyl methacrylate as main monomers, using hydroxyethyl acrylate and acrylic acid as functional group monomers. it can.
  • Examples of methods for applying the varnish on the supporting substrate include generally known methods such as knife coating, roll coating, spray coating, gravure coating, bar coating, and curtain coating.
  • the thickness of the adhesive layer 2 is not particularly limited but is preferably 3 to 200 ⁇ m. If the thickness is smaller than 3 ⁇ m, the stress relaxation effect tends to be poor. If the thickness is larger than 200 ⁇ m, it is not economical and it becomes difficult to meet the demand for downsizing of the semiconductor device.
  • the protective film for example, a polymer film having heat resistance and solvent resistance such as polyethylene terephthalate can be used.
  • examples of commercially available products include polyethylene terephthalate films such as “A-31” manufactured by Teijin DuPont Films, Inc.
  • the protective film preferably has a thickness of 10 to 100 ⁇ m, more preferably 30 to 75 ⁇ m, and particularly preferably 35 to 50 ⁇ m. If the thickness is less than 10 ⁇ m, the protective film tends to be broken during coating, and if it exceeds 100 ⁇ m, the cost tends to be inferior.
  • the above-described adhesive sheet 10 for connecting a circuit member is interposed between a circuit member and a semiconductor element having circuit electrodes which are opposed to each other and solder-bonded, or between semiconductor elements, and the circuit member and the semiconductor elements or the semiconductor elements are interleaved.
  • the circuit member and the semiconductor element or the semiconductor elements can be bonded with a sufficient adhesive force while suppressing generation of voids by thermocompression bonding. Thereby, the connection body excellent in connection reliability can be obtained.
  • FIGS. 2 to 6 are schematic cross-sectional views for explaining a preferred embodiment of a method for manufacturing a semiconductor device according to the present invention.
  • the manufacturing method of the semiconductor device of this embodiment is as follows: (A) A semiconductor wafer having a plurality of circuit electrodes on one of the main surfaces is prepared, and the adhesive for the above-described adhesive sheet for connecting circuit members according to the present invention is provided on the side of the semiconductor wafer where the circuit electrodes are provided.
  • a step of applying a layer (B) a step of grinding the opposite side of the semiconductor wafer to the side where the circuit electrodes are provided to thin the semiconductor wafer; (C) irradiating the adhesive layer with radiation; (D) a step of dicing the thinned semiconductor wafer and the adhesive layer irradiated with radiation into individual semiconductor elements with a film adhesive; (E) a step of bonding the semiconductor element with a film adhesive and the semiconductor element mounting support member through the film adhesive of the semiconductor element with a film adhesive; Is provided.
  • the adhesive sheet 10 is arrange
  • the circuit electrode 20 may be provided with solder bumps for solder bonding. In addition, it is possible to provide solder bumps on the circuit electrodes of the semiconductor element mounting support member without providing the circuit electrodes 20 with solder bumps.
  • the side of the semiconductor wafer A opposite to the side where the circuit electrodes 20 are provided is ground by the grinder 4 to thin the semiconductor wafer.
  • the thickness of the semiconductor wafer can be, for example, 10 ⁇ m to 300 ⁇ m. From the viewpoint of miniaturization and thinning of the semiconductor device, the thickness of the semiconductor wafer is preferably 20 ⁇ m to 100 ⁇ m.
  • the adhesive bond layer 2 is hardened by irradiating the adhesive bond layer 2 from the support base material 3 side, and the adhesive bond layer 2, the support base material 3, and Reduce the adhesive strength between.
  • the radiation used include ultraviolet rays, electron beams, and infrared rays.
  • the irradiation condition is such that the illuminance is 15 to 100 mW / cm 2 and the irradiation dose is such that the component (C) such as the acrylic monomer is polymerized. It is preferable to irradiate with.
  • FIG.4 (a) shows, the dicing tape 5 is affixed on the semiconductor A of a laminated body, this is arrange
  • the semiconductor wafer A and the adhesive layer 2 are diced by a dicing saw 6 as shown in FIG.
  • the semiconductor wafer A is divided into a plurality of semiconductor elements A ′, and the adhesive layer 2 is divided into a plurality of film adhesives 2a.
  • the semiconductor elements A ′ obtained by the dicing tape 5 are pushed up with a needle while the semiconductor elements A ′ obtained by the dicing are separated from each other, and film-like adhesion is performed.
  • the film-like adhesive-attached semiconductor element 12 made of the agent 2a is sucked and picked up by the suction collet 7.
  • circuit electrode 20 or the circuit electrode 22 When the circuit electrode 20 or the circuit electrode 22 is provided with solder bumps, the circuit electrode 20 and the circuit electrode 22 are electrically and mechanically connected by solder bonding by thermocompression bonding.
  • the temperature at the time of thermocompression bonding is preferably 200 ° C. or more, more preferably 220 ° C. to 260 ° C. from the viewpoint of solder bonding.
  • the thermocompression bonding time can be 1 to 20 seconds.
  • the pressure for thermocompression bonding can be 0.1 to 5 MPa.
  • the semiconductor device 30 is obtained through the above steps.
  • the manufacturing method of the semiconductor device according to the present embodiment by using the adhesive sheet for connecting circuit members according to the present invention, in the step (a), generation of peeling and voids can be sufficiently suppressed, and in the step (b) The wafer can be ground while sufficiently preventing the occurrence of breakage and cracks.
  • the semiconductor element and the semiconductor element mounting support member can be satisfactorily bonded while sufficiently suppressing the generation of voids. it can. Thereby, the semiconductor device 30 can be excellent in connection reliability.
  • such a semiconductor device can be manufactured with a high yield.
  • silica particles “SE-2050” manufactured by Admatechs Co., Ltd., product name, average particle size 0.5 ⁇ m
  • the mixture was added at a ratio of 400 parts by mass, and stirred and dispersed.
  • the obtained dispersion was applied on a separator film (PET film, thickness 38 ⁇ m) as a supporting substrate using a roll coater, and then dried in an oven at 70 ° C. for 10 minutes.
  • a separator film PET film, thickness 38 ⁇ m
  • an adhesive sheet for connecting circuit members in which an adhesive layer having a thickness of 30 ⁇ m was formed on the support substrate, was obtained.
  • Example 2 An adhesive sheet for connecting circuit members was obtained in the same manner as in Example 1 except that 60 parts by mass of “EX-1020” (manufactured by Osaka Gas Chemical Co., Ltd., product name) was blended in place of “YL-980”. .
  • Example 3 An adhesive sheet for connecting circuit members was obtained in the same manner as in Example 1 except that 80 parts by mass of “A-DPH” (manufactured by Shin-Nakamura Industrial Chemical Co., Ltd., product name) was used instead of “FA-513AS”. It was.
  • Example 4 An adhesive sheet for connecting circuit members was obtained in the same manner as in Example 1 except that 100 parts by mass of “YP-70” (product name, manufactured by Toto Kasei Co., Ltd.) was used instead of “FX293”.
  • Example 5 An adhesive sheet for connecting circuit members was obtained in the same manner as in Example 3, except that 20 parts by mass of “DML-POP” (Honshu Chemical Industry Co., Ltd., product name), which is a methylol compound, was further blended.
  • DML-POP Hydrophilic Polymer
  • BG tape A was produced by the following procedure.
  • An acrylic copolymer was synthesized by a solution polymerization method using 2-ethylhexyl acrylate and methyl methacrylate as main monomers and hydroxyethyl acrylate and acrylic acid as functional group monomers.
  • the resulting acrylic copolymer had a weight average molecular weight of 400,000 and a glass transition point of ⁇ 38 ° C.
  • an adhesive varnish was prepared by blending 10 parts by mass of a polyfunctional isocyanate crosslinking agent (trade name: Colonate HL, manufactured by Nippon Polyurethane Industry Co., Ltd.) with respect to 100 parts by mass of the acrylic copolymer, and polyolefin film (Okamoto Co., Ltd.)
  • the product was dried on a product (trade name: WNH-2110, thickness: 100 ⁇ m) so that the thickness of the pressure-sensitive adhesive layer when dried was 10 ⁇ m.
  • a biaxially stretched polyester film made by Teijin DuPont Films, trade name: A3171, thickness 25 ⁇ m coated with a silicone release agent was laminated on the pressure-sensitive adhesive surface.
  • the film with the pressure-sensitive adhesive layer was allowed to stand at room temperature for 1 week and sufficiently aged.
  • BG tape A was obtained by removing the biaxially stretched polyester film from the film with an adhesive layer after aging.
  • Phenoxy resin “FX293” (product name, manufactured by Tohto Kasei Co., Ltd.) as a thermoplastic resin, 100 parts by mass, epoxy resin “1032H60” (product name, manufactured by Japan Epoxy Resin Co., Ltd.), 80 parts by mass and “YL-980” ( Japan Epoxy Resin Co., Ltd., product name) 60 parts by mass, radiation-polymerizable compound “FA-513AS” (manufactured by Hitachi Chemical Co., Ltd., product name) 80 parts by mass, photoinitiator “Irg-184” (Ciba Specialty Chemicals Co., Ltd., product name) 4.0 parts by mass, “HX-3941HP” (product name, manufactured by Asahi Kasei Chemicals Co., Ltd.) as a microcapsule type curing accelerator, and silane coupling agent "SH-6040" (made by Toray Dow Corning Silicone, product name) mixed with 4 parts by mass The product was dissolved in a mixed solvent of to
  • silica particles “SE-2050” manufactured by Admatechs Co., Ltd., product name, average particle size 0.5 ⁇ m
  • the mixture was added at a ratio of 400 parts by mass, and stirred and dispersed.
  • the obtained dispersion was coated on a surface release-treated polyethylene terephthalate (Teijin DuPont Films, Teijin Tetron Film: A-31, thickness 50 ⁇ m) as a protective film so that the thickness after drying was 30 ⁇ m. And heated and dried at 70 ° C. for 10 minutes to form an adhesive layer.
  • ⁇ Wafer adhesion> Laminating conditions (temperature) with an adhesive sheet for connecting circuit members on the surface of a silicon wafer (6 inch diameter, thickness 625 ⁇ m) mounted on a support base, with the adhesive layer facing the silicon wafer
  • the layers were laminated by applying pressure at 80 ° C., linear pressure of 0.5 to 2 kgf / cm, and feeding speed of 0.5 to 5 m / min.
  • the adhesive state of the adhesive layer at this time was inspected by visual observation and microscopic observation, and the wafer adhesiveness was evaluated based on the following criteria. A: Peeling and voids are not observed. C: Peeling and voids are observed.
  • ⁇ Wafer backside grindability> a laminate of an adhesive sheet for connecting circuit members and a silicon wafer (thickness: 625 ⁇ m) was prepared, and this was placed on a back grinder, and the back surface of the silicon wafer was ground until the thickness reached 280 ⁇ m (back grinding) )did. The ground wafer was inspected visually and under a microscope, and the wafer backside grindability was evaluated based on the following criteria. A: There is no breakage of the wafer and generation of microcracks. C: The wafer is broken or microcracks are generated.
  • a chip (10 mm square, thickness 280 ⁇ m) with gold wire bumps (leveled, bump height 30 ⁇ m, 184 bumps) was placed on the stage of the temporary pressure bonding apparatus with the bump surface facing up.
  • the circuit board connecting adhesive sheet is cut into 11 mm squares together with the supporting substrate, and this is placed on the chip so that the adhesive layer side faces the bump surface, and further, a silicone heat conductive cover film is placed thereon, Heating and pressing were performed at 80 ° C. and 1 MPa.
  • the supporting base material was peeled off from the adhesive layer, and the adhesive layer was exposed to 500 mJ at an illuminance of 15 mW / cm 2 using ultraviolet rays to obtain a chip with an adhesive.
  • the obtained chip with adhesive was aligned with a Ni / Au plated Cu circuit printed circuit board, and then heated and pressurized at 250 ° C., 5 MPa, and 10 seconds.
  • the void situation was observed with the ultrasonic microscope, and embedding property was evaluated based on the following reference
  • C Many voids exist, and the voids are 10% or more of the embedded area.
  • the wafer back surface grindability evaluation sample was irradiated with ultraviolet rays under the conditions of illuminance: 20 mW / cm 2 and exposure amount: 500 mJ, and then the support substrate (or BG tape) of the adhesive sheet for connecting circuit members was 5 mm / second. It peeled at the speed of.
  • the support substrate (or BG tape) after peeling and the surface of the wafer with the adhesive for connecting circuit members were inspected visually and under a microscope, and the support substrate peelability was evaluated based on the following criteria.
  • A: The supporting substrate (or BG tape) can be peeled from the adhesive layer, and there is no peeling of the adhesive layer and the wafer.
  • a support base material (or BG tape) cannot partly peel from an adhesive layer, and part of the adhesive layer is peeled off from the wafer. (Peeling area of adhesive layer from wafer is less than 30%)
  • C The supporting substrate (or BG tape) cannot be peeled off from the adhesive layer, and the entire adhesive layer is peeled off from the wafer. (Peeling area of adhesive layer from wafer is 30% or more)

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PCT/JP2010/057472 2009-05-13 2010-04-27 接着剤組成物、回路部材接続用接着剤シート及び半導体装置の製造方法 WO2010131575A1 (ja)

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CN110678966A (zh) * 2017-06-01 2020-01-10 日立化成株式会社 半导体加工用胶带
WO2024070134A1 (ja) * 2022-09-26 2024-04-04 株式会社レゾナック 半導体装置の製造方法及び半導体ウエハ加工用接着フィルム
WO2024070132A1 (ja) * 2022-09-26 2024-04-04 株式会社レゾナック 半導体装置の製造方法及び半導体ウエハ加工用接着フィルム

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KR20150011072A (ko) 2013-07-22 2015-01-30 삼성전자주식회사 임시 접착제 조성물 및 이를 이용한 반도체 소자의 제조 방법
JP6244183B2 (ja) * 2013-11-20 2017-12-06 東京応化工業株式会社 処理方法
KR101649760B1 (ko) * 2015-04-29 2016-08-19 한국신발피혁연구원 내수 및 내열 특성이 우수한 1액형 수성 접착제 조성물의 제조방법 및 이 방법에 의해 제조된 1액형 수성 접착제 조성물
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KR102588785B1 (ko) * 2019-02-25 2023-10-12 미쓰비시덴키 가부시키가이샤 반도체 소자의 제조 방법
CN112552853B (zh) * 2020-12-29 2022-08-02 烟台信友新材料有限公司 一种紫外光引发常温快速固化单组分环氧胶及其制备方法
JP2024078062A (ja) * 2022-11-29 2024-06-10 株式会社レゾナック 接着剤フィルム、接着剤テープ、剥離フィルム付き接着剤テープ、半導体装置の製造方法及び半導体装置

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