WO2010128811A2 - Appareil de dépôt de films minces et système de dépôt de films minces le comprenant - Google Patents

Appareil de dépôt de films minces et système de dépôt de films minces le comprenant Download PDF

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Publication number
WO2010128811A2
WO2010128811A2 PCT/KR2010/002887 KR2010002887W WO2010128811A2 WO 2010128811 A2 WO2010128811 A2 WO 2010128811A2 KR 2010002887 W KR2010002887 W KR 2010002887W WO 2010128811 A2 WO2010128811 A2 WO 2010128811A2
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Prior art keywords
substrate
chambers
thin film
chamber
transfer
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PCT/KR2010/002887
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English (en)
Korean (ko)
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WO2010128811A3 (fr
Inventor
배경빈
윤형석
강창호
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에스엔유 프리시젼 주식회사
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Priority to CN201080020337.9A priority Critical patent/CN102421933B/zh
Priority to JP2012509732A priority patent/JP5506917B2/ja
Publication of WO2010128811A2 publication Critical patent/WO2010128811A2/fr
Publication of WO2010128811A3 publication Critical patent/WO2010128811A3/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates

Definitions

  • the present invention relates to a thin film deposition apparatus, and more particularly, to a thin film deposition apparatus for forming a thin film on a substrate and a thin film deposition system in which the thin film deposition apparatus is connected in an in-line manner.
  • OLEDs organic light emitting diodes
  • the display device using the same may implement an excellent image without problems of the viewing angle and afterimage.
  • Such an organic light emitting device is produced by laminating a multilayer thin film such as an organic film and a metal film on a glass substrate. Therefore, in the related art, a cluster method in which a plurality of unit chambers in which a series of unit processes are performed around a circular transfer chamber is mainly used, and a substrate transfer and device process in a state where a glass substrate is horizontally disposed between the respective chambers. This was configured to be done.
  • This cluster method has the advantage of being able to proceed rapidly in a series of processes, there is an advantage that the exchange of the deposition mask (essential mask) is essential when manufacturing the organic light emitting device.
  • the inline (in) in which the process chambers performing the respective unit processes are connected in series -line) method is suitable. Therefore, there is a need to convert the conventional cluster method to the inline method, the inline method has a lot of overlapping equipment compared to the cluster method is expensive to build the production line, there is a problem that the productivity is low due to the slow process speed.
  • the substrate is horizontally arranged to perform a thin film process (organic film deposition process), which causes severe deflection of the substrate, which causes considerable difficulty in fabricating the device.
  • a thin film process organic film deposition process
  • the deposition mask for a large-area substrate has a load of several hundred kg or more, the deflection phenomenon of the substrate is more severe, causing serious problems such as breaking of the substrate.
  • the present invention has been proposed to solve the above problems, and can achieve high productivity by minimizing the process waiting time such as processing a plurality of substrates in parallel, loading / fixing of substrates, and placing / aligning deposition masks.
  • process waiting time such as processing a plurality of substrates in parallel, loading / fixing of substrates, and placing / aligning deposition masks.
  • the present invention provides a thin film deposition apparatus and a thin film deposition system having the same to maximize the common use of the overlapping equipment, thereby reducing the construction cost of the production line.
  • the present invention provides a thin film deposition apparatus and a thin film deposition system having the same to be able to overcome the deflection phenomenon of the substrate by performing a thin film process by placing the substrate in a vertical state.
  • a thin film deposition apparatus includes a transfer chamber in which a substrate is transferred; And first and second process chambers respectively coupled to both sides of the transfer chamber.
  • Each of the first and second process chambers includes: first and second substrate holders spaced apart from each other; And a spraying unit installed between the first and second substrate holders to sequentially supply deposition raw materials toward the first and second substrate holders. It includes.
  • the first and second substrate holders support the substrate in a vertical state.
  • the transfer chamber is provided with a substrate rotating member which rotates the substrate to stand in a vertical state or lie down in a horizontal state.
  • the jetting unit is rotatable between the first substrate holder and the second substrate holder.
  • the spray unit has a spray structure of any one of a point type, a linear type and a planar type.
  • Each of the first and second process chambers may be connected to a mask chamber for providing a deposition mask to each of the first and second substrate holders or replacing the deposition mask.
  • a thin film deposition system includes: a plurality of transfer chambers connected in a line to transfer a substrate; And first and second process chambers respectively coupled to at least one of the plurality of transfer chambers.
  • Each of the first and second process chambers includes: first and second substrate holders spaced apart from each other; And an injection unit installed between the first and second substrate holders to sequentially supply deposition material toward the first and second substrate holders.
  • the plurality of transfer chambers include a plurality of distribution chambers connected to the first and second process chambers to distribute the substrate and a plurality of buffer chambers connected between neighboring distribution chambers to temporarily hold the substrate. .
  • the first and second substrate holders support the substrate in a vertical state.
  • the transfer chamber is provided with a substrate rotating member which rotates the substrate to stand in a vertical state or lie down in a horizontal state.
  • the jetting unit is rotatable between the first substrate holder and the second substrate holder.
  • a plurality of process chambers that perform the same process are connected to both sides of the transfer chamber, so that the process speed may be increased by performing a thin film process on a plurality of substrates in parallel.
  • the present invention can sequentially achieve a thin film process for a plurality of substrates provided in the process chamber through a single injection unit to achieve cost reduction and productivity improvement at the same time.
  • the present invention is provided with a plurality of processing means on both sides of the inside of the process chamber, it is possible to perform a preliminary preparation for the other process or to perform a post-cleaning operation while the process of one side is performed. Therefore, the overall work waiting time can be shortened and productivity can be greatly improved.
  • the substrate is disposed in a horizontal state during substrate transfer, the substrate is less likely to break during substrate transfer, and the substrate is disposed in a vertical state during the thin film process, so that the substrate is less likely to sag and thus device manufacturing is easy.
  • FIG. 1 is a plan view showing a thin film deposition system according to an embodiment of the present invention.
  • FIG. 2 is a plan view showing some chambers in the thin film deposition system of FIG. 1.
  • 3 to 8 are plan views illustrating a unit process of a thin film deposition system according to an exemplary embodiment of the present invention.
  • loading chamber 120 unloading chamber
  • 200A, 200B process chamber 311, 312, 321, 322: mask chamber
  • FIG. 1 is a plan view showing a thin film deposition system according to an embodiment of the present invention
  • Figure 2 is a plan view showing a part of the chamber in the thin film deposition system of FIG.
  • a plurality of transfer chambers 410, 420, 400 are connected in a line between a front loading chamber 110 and a rear unloading chamber 120.
  • the first and second process chambers 200A and 200B are connected to both of the transfer chambers 410, so that the substrate transfer and the unit process are performed in an in-line manner.
  • the unit process for one substrate G1 / G2 is performed.
  • the preliminary preparation work of the unit process for the other side substrate G3 / G4 can be performed.
  • the loading chamber 110 serves to receive the substrates G1, G2, G3, and G4 that have completed a predetermined preliminary process at atmospheric pressure, and to carry them into the vacuum transfer chamber 400, and the unloading chamber 120
  • the loading chamber 110 and the unloading chamber 120 are configured to switch between the atmospheric pressure state and the vacuum state.
  • the loading chamber 110 and the unloading chamber 120 may be connected with a substrate carrying means such as a robot arm and a substrate loading means such as a substrate cassette.
  • the transfer chamber 400 is connected to the first and second process chambers 200A and 200B and is connected between the distribution chamber 410 and neighboring distribution chambers for distributing the substrates G1, G2, G3, and G4.
  • the buffer chamber 420 may be temporarily suspended by the substrates G1, G2, G3, and G4. In this case, the buffer chamber 420 provides a temporary space in which the substrates G1, G2, G3, and G4 temporarily stay for process waiting.
  • the distribution chamber 410 is provided with a substrate rotating member (not shown) for rotating the substrates G1, G2, G3, and G4 to stand in a vertical state or to lie down in a horizontal state.
  • the substrates G1, G2, G3, and G4 conveyed in a horizontal state from the preceding chamber by the substrate rotating member are erected in a vertical state and introduced into the first and second process chambers 200A and 200B.
  • the substrates G1, G2, G3, and G4 carried out in the vertical state from the two process chambers 200A and 200B are laid down in a horizontal state and conveyed to the subsequent chamber. Accordingly, the substrates G1, G2, G3, and G4 may be disposed in a vertical state in the thin film process, thereby minimizing substrate deflection, and the substrates G1, G2, G3, and G4 may be disposed in the vertical state during substrate transfer. It is possible to minimize the breakage of the substrate due to the flow.
  • the substrates G1, G2, G3, and G4 may be disposed in a vertical state even when the substrate is conveyed, and in this case, the substrate rotating member does not need to be provided in the distribution chamber 410.
  • the first and second process chambers 200A and 200B are connected to both sides of each of the distribution chambers 410, and the deposition masks M1 / M3, and each of the first and second process chambers 200A and 200B are also connected to each of the distribution chambers 410.
  • First and second mask chambers 311/321, 312/322 for supplying the M2 / M4 are connected.
  • the first and second mask chambers 311/321, 312/322 store deposition masks to be used or replaced in the thin film process.
  • only one common mask chamber may be connected to each of the first and second process chambers 200A and 200B.
  • first and second process chambers 200A and 200B connected to the same distribution chamber 410 are configured to perform the same unit process, and the first and second process chambers 211 / connected to the series of distribution chambers.
  • 221/231/241/251 / 261,212 / 222/232/242/252/262 are configured to perform a series of device processes on a substrate.
  • a hole injection layer (HIL), a hole transport layer (HTL), an emitting material layer (EML), and an electron are formed on a substrate G on which an anode is formed from the outside. It is configured to form an organic light emitting device in which a transport layer (ETL), an electron injection layer (EIL), and a cathode are sequentially stacked.
  • first and second process chambers 211 and 212 for forming a hole injection layer are connected to the first distribution chamber, and first and second process chambers 221 and 222 for forming a hole transport layer are connected to the second distribution chamber. do.
  • first and second process chambers 231 and 232 for forming the emission layer are connected to the third distribution chamber, and the first and second process chambers 241 and 242 for forming the electron transport layer are connected to the fourth distribution chamber.
  • first and second process chambers 251 and 252 for forming an electron injection layer are connected to the fifth distribution chamber, and first and second process chambers 261 and 262 for forming a cathode are connected to the sixth transfer chamber.
  • the first and second chambers 231 and 232 for forming the light emitting layer may include a plurality of chambers 231a / 231b, 231c and 232a for forming blue (B), green (G) and red (R) light emitting layers to achieve natural colors.
  • / 232b / 232c, and the first and second chambers 261 and 262 for forming the cathode may include a plurality of chambers 261a / 261b, 261c, 262a / 262b / 262c for forming the cathode of the multilayer structure. It may include.
  • Each of the process chambers 200A and 200B is formed in a rectangular box shape, and a predetermined reaction space for processing the substrates G1, G2, G3, and G4 is provided therein.
  • first and second substrate holders 520/620, 530/630 supporting the substrates G1, G2, G3, and G4 in a vertical state are installed to be spaced apart from each other, and the first and second substrate holders 520.
  • Injection units 540 and 640 are installed between / 620, 530 and 630.
  • first and second gates 511/611, 512/612 are formed in the process chambers 200A and 200B to be connected to the distribution chamber 410 so that the substrate G is loaded or taken out.
  • the first and second gates 511/611 and 512/612 may be configured as slit valves.
  • Each of the first and second substrate holders 520/620, 530/630 is provided with a support 521 for supporting a rear surface of the substrates G1, G2, G3, and G4, and the substrate G is provided on the support 521.
  • a temperature controller 523 for controlling the substrate temperature.
  • the temperature controller 523 is installed inside or under the support 521 to control the substrates G1 / G2 and G3 / G4 mounted on the support 521 to be maintained at a temperature suitable for performing a process.
  • the temperature control means 521 may be composed of a combination of at least one of cooling means for cooling the substrates G1 / G2, G3 / G4 and heating means for heating the substrates G1 / G2, G3 / G4. Can be.
  • a cooling passage is formed in the body of the support 521 so that the substrate temperature is kept constant at the process temperature, thereby improving reactivity with the deposition material deposited on the upper surfaces of the substrates G1 / G2 and G3 / G4. .
  • the clamp 522 holds the edges of the substrates G1, G2, G3, and G4 to prevent the substrates G1, G2, G3, and G4 seated on the support 521 from flowing during the process.
  • the deposition masks M1, M2, M3, and M4 are disposed on the substrates G1, G2, G3, and G4 to regulate the thin film patterns formed on the substrates G1, G2, G3, and G4. Therefore, the clamp 522 may be configured to fix the substrates G1, G2, G3, and G4 and the deposition masks M1, M2, M3, and M4 on the support 521.
  • each injection unit (540,640) includes a crucible in which the raw material is stored, a heating part for vaporizing the raw material and an injection part for injecting the vaporized raw material, and the injection part has a point (point) point.
  • this embodiment is a linear deposition source 540 configured by arranging a plurality of point deposition sources in a row
  • the linear deposition sources 540 and 640 uniformly inject raw materials to the entire area of the substrates G1, G2, G3, and G4 while reciprocating left and right by a reciprocating driving member (not shown).
  • the spray units 540 and 640 of the present embodiment are rotated 180 degrees with respect to the first substrate holders 520 and 620 to spray the raw materials toward the second substrate holders 530 and 630, or vice versa. And to spray the raw material in the direction of (520,620). Accordingly, the thin film process for the plurality of substrates G1 / G2, G3 / G4 provided on both sides of the single chamber 200A or 200B may be sequentially performed using one injection unit.
  • the substrate G on which the anode is formed through the preceding process is loaded into the loading chamber 110 at atmospheric pressure, and the inside of the loading chamber 110 is converted into a vacuum state. Subsequently, the substrate G in a vacuum state is sequentially transferred to a plurality of transfer chambers 410 and 420 connected in series with the loading chamber 110, and each of the process chambers connected to some of the transfer chambers ie, the distribution chamber 410.
  • the unit process is performed by adding to (211/221/231/241/251 / 261,212 / 222/232/242/252/262).
  • the substrate G is sequentially introduced into the hole injection layer forming chambers 211 and 212, the hole transport layer forming chambers 221 and 222, and the light emitting layer forming chambers 231 and 232 in a vacuum state. Accordingly, the hole injection layer, the hole transport layer, and the light emitting layer are sequentially formed on the anode of the substrate G. Thereafter, the electron transport layer forming chambers 241 and 242, the electron injection layer forming chambers 251 and 252, and the cathode forming chambers 261 and 262 are sequentially input. As a result, an electron transporting layer, an electron injection layer, and a multilayer cathode are formed on the light emitting layer of the substrate G, thereby producing an organic light emitting device. Subsequently, the substrate G, which has completed the device process, is transferred to the unloading chamber 120 and is carried out to the outside at atmospheric pressure.
  • the substrate G is conveyed in the vertical state or the horizontal state, and the thin film process is performed in the vertical state.
  • a process of switching the substrate G in the horizontal state to the vertical state is required in each transfer chamber 410.
  • FIGS. 3 to 8. 3 to 8 are plan views illustrating a unit process of a thin film deposition system according to an exemplary embodiment of the present invention.
  • the first and second substrates G1 and G2 in a horizontal state are loaded into the distribution chamber 410 and then converted into a vertical state, and the first and second process chambers ( After being loaded into the inside of the 200A and 200B, the substrate 200 is fixed to the substrate holders 520 and 630. At this time, conveyance of the 1st, 2nd board
  • G1, G2) is arranged in front of the deposition surface and aligned. Subsequently, as shown in FIG. 5, the injection directions of the injection units 540 and 640 are positioned to face the deposition surfaces of the first and second substrates G1 and G2, and the first and second substrates are disposed through the injection units 540 and 640.
  • the first thin film process is performed on the first and second substrates G1 and G2 by spraying a vaporized raw material onto the deposition surfaces of G1 and G2.
  • the third and fourth substrates G3 and G4 are loaded into the distribution chamber 410 during the first thin film process.
  • the third and fourth substrates G3 and G4 are converted into the vertical state in the distribution chamber 410, and are loaded into the first and second process chambers 200A and 200B, respectively, and then the substrate holders 520 and 630. Is fixed to.
  • deposition masks M3 and M4 are provided from the mask chambers 312 and 321 connected to the first and second process chambers 200A and 200B, respectively.
  • G3, G4) are arranged in front of the deposition surface and aligned.
  • the loading / fixing operation of the third and fourth substrates G3 and G4 and the placement / alignment operation of the deposition masks M3 and M4 therefor are preferably performed during the first thin film process.
  • productivity can be improved by shortening the waiting time for performing the next second thin film process.
  • the spray directions of the spray units 540 and 640 are rotated 180 degrees in the opposite direction. Accordingly, when the deposition surfaces of the third and fourth substrates G3 and G4 and the spraying directions of the injection units 540 and 640 face each other, the third and fourth substrates G3 and G4 may be disposed through the injection units 540 and 640.
  • a second thin film process is performed on the third and fourth substrates G3 and G4 by spraying a vaporized raw material on the deposition surface.
  • the deposition masks M1 and M2 are separated from the first and second substrates G1 and G2 that have completed the first thin film process while the second thin film process is being performed, and the deposition mask M1 is performed.
  • the first and second substrates G1 and G2 from which M2 is separated are brought back into the distribution chamber 410.
  • the first and second substrates G1 and G2 are converted into a horizontal state in the distribution chamber 410 and then sequentially transferred to subsequent process chambers that perform horizontal transfer to perform a series of device processes.
  • the carrying out / separating operation of the first and second substrates G1 and G2 and the separating operation of the deposition masks M1 and M2 used therein are preferably performed during the performance of the second thin film process. Therefore, it is possible to shorten the waiting time for performing the next first thin film process to improve productivity.
  • the deposition masks M1, M2, M3, and M4 used in the first and second thin film processes are used in the next thin film process while staying in the chamber, and masks corresponding to replacement factors such as contamination and breakage occur. It is transferred to the chambers 311, 312, 313, 314 and taken out to the atmosphere. Thereafter, the deposition mask is reused through operations such as cleaning and repairing.
  • the deposition masks used in the mask chambers 311, 312, 313, 314 and the spare deposition masks for replacement are stored, thereby minimizing the process downtime during the replacement operation.
  • a plurality of substrates G1 / G2 and G3 / G4 may be connected by connecting a plurality of process chambers 200A and 200B to perform the same process on both sides of the transfer chamber 400.
  • the thin film process for) may be performed in parallel to increase the process speed.
  • the process chamber 200A or 200B is provided with a single injection unit 540, 640 for sequentially injecting raw materials toward the plurality of substrate holders 520/530, 620/630, thereby providing a single injection unit 540, 640.
  • the process chamber 200A or 200B is provided with a plurality of process means 520/530 and 620/630 on both sides thereof, so that the preliminary preparatory work for the other process is performed during one process, for example, The import / fix operation and the deposition / arrangement operation of the deposition mask may be performed, or the post-cleaning operation may be performed, for example, the carrying out / separation operation of the substrate and the separation operation of the deposition mask. Therefore, the overall work waiting time can be shortened and productivity can be greatly improved.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention porte sur un appareil de dépôt de film mince comprenant : une chambre de transfert pour transférer des substrats ; et une première chambre de traitement et une seconde chambre de traitement couplées respectivement aux deux côtés de la chambre de transfert, chacune de la première chambre de traitement et de la seconde chambre de traitement comprenant : un premier support de substrat et un second support de substrat espacés l'un de l'autre ; et une unité de pulvérisation interposée entre le premier support de substrat et le second support de substrat pour fournir de façon consécutive des matières de dépôt dans la direction des premier et second supports de substrat. La présente invention porte également sur un système de dépôt de films minces comprenant l'appareil. L'appareil ainsi configuré de la présente invention a de multiples chambres de traitement qui réalisent le même traitement et qui sont reliées respectivement aux deux côtés de la chambre de traitement, permettant ainsi d'effectuer un traitement de films minces simultanément sur de multiples substrats et d'améliorer la vitesse de traitement.
PCT/KR2010/002887 2009-05-07 2010-05-06 Appareil de dépôt de films minces et système de dépôt de films minces le comprenant WO2010128811A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201080020337.9A CN102421933B (zh) 2009-05-07 2010-05-06 薄膜沉积装置及其系统
JP2012509732A JP5506917B2 (ja) 2009-05-07 2010-05-06 薄膜蒸着装置およびこれを備える薄膜蒸着システム

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KR1020090039826A KR101119853B1 (ko) 2009-05-07 2009-05-07 박막 증착 장치 및 이를 구비하는 박막 증착 시스템
KR10-2009-0039826 2009-05-07

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WO2010128811A2 true WO2010128811A2 (fr) 2010-11-11
WO2010128811A3 WO2010128811A3 (fr) 2011-03-17

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WO2019034255A1 (fr) * 2017-08-17 2019-02-21 Applied Materials, Inc. Procédé de manipulation de plusieurs masques, procédé de traitement de substrats et appareil de revêtement de substrats

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KR101151234B1 (ko) * 2010-03-30 2012-06-14 주식회사 케이씨텍 직립방식 증착장치 및 기판 이송 방법
KR101700608B1 (ko) * 2011-04-15 2017-02-01 이찬용 기판처리장치
JP5846780B2 (ja) * 2011-06-30 2016-01-20 株式会社アルバック 真空処理装置及び真空処理方法、リチウムイオン二次電池の製造方法
KR101467195B1 (ko) * 2013-05-14 2014-12-01 주식회사 아바코 가스 분사기 및 이를 포함하는 박막 증착 장치
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KR102088155B1 (ko) * 2017-03-17 2020-03-12 어플라이드 머티어리얼스, 인코포레이티드 진공 시스템에서 마스크 디바이스를 핸들링하는 방법들, 마스크 핸들링 장치, 및 진공 시스템
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KR101921648B1 (ko) * 2017-12-28 2018-11-26 주식회사 올레드온 수직형 면증발원을 이용한 고해상도 ａｍｏｌｅｄ 소자의 클러스터형 양산장비
KR20210081597A (ko) * 2019-12-24 2021-07-02 캐논 톡키 가부시키가이샤 성막 시스템　및 전자 디바이스 제조방법
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CN102421933A (zh) 2012-04-18
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JP5506917B2 (ja) 2014-05-28
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