WO2010126001A1 - 結晶質膜の製造方法および製造装置 - Google Patents

結晶質膜の製造方法および製造装置 Download PDF

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Publication number
WO2010126001A1
WO2010126001A1 PCT/JP2010/057357 JP2010057357W WO2010126001A1 WO 2010126001 A1 WO2010126001 A1 WO 2010126001A1 JP 2010057357 W JP2010057357 W JP 2010057357W WO 2010126001 A1 WO2010126001 A1 WO 2010126001A1
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WO
WIPO (PCT)
Prior art keywords
film
amorphous film
laser beam
amorphous
producing
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Application number
PCT/JP2010/057357
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English (en)
French (fr)
Japanese (ja)
Inventor
陵太郎 富樫
俊夫 井波
秀晃 草間
徹太郎 河上
Original Assignee
株式会社日本製鋼所
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Application filed by 株式会社日本製鋼所 filed Critical 株式会社日本製鋼所
Priority to KR1020107028510A priority Critical patent/KR101189647B1/ko
Priority to JP2010546167A priority patent/JP5213192B2/ja
Priority to CN201080001857.5A priority patent/CN102067285A/zh
Priority to TW099113469A priority patent/TWI435390B/zh
Publication of WO2010126001A1 publication Critical patent/WO2010126001A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors

Definitions

  • the present invention relates to a crystalline film manufacturing method and a manufacturing apparatus for producing a crystalline film by irradiating an amorphous film with a laser beam and finely crystallizing it.
  • the amorphous silicon film provided on the upper layer of the substrate is irradiated with pulsed laser light to melt the amorphous silicon film.
  • Recrystallization method laser annealing method
  • SPC solid phase growth method
  • polysilicon is a stable material and has a long life.
  • the characteristic variation of the TFT is large. This variation in TFT characteristics is more likely to occur due to variations in crystal grain size and the presence of crystalline silicon crystal grain interfaces (crystal grain boundaries) in the TFT channel formation region. Variations in TFT characteristics tend to depend mainly on the crystal grain size and the number of crystal grain boundaries existing between the channels.
  • the electron mobility generally increases.
  • the TFT channel length must be increased instead of those with high field electron mobility, and the size of each pixel of RGB (red, green, blue) depends on the TFT channel length. As a result, high resolution cannot be obtained. For this reason, the degree of demand for fine crystal films with small variations in crystal grain size is increasing.
  • the laser annealing method is a process in which amorphous silicon is once melted and recrystallized, and generally has a large crystal grain size.
  • the field electron mobility is high, the number of crystal grain sizes in the channel region of a plurality of TFTs varies, the random shape, and the difference in crystal orientation between adjacent crystals.
  • the characteristic variation of the TFT is greatly affected.
  • a difference in crystallinity is likely to appear in the laser overlapping portion, and this difference in crystallinity greatly affects the variation in TFT characteristics.
  • the crystal obtained by the solid phase growth method has the smallest particle size and little TFT variation, and is the most effective crystallization method for solving the above problems.
  • the crystallization time is long and it is difficult to adopt for mass production.
  • a batch type heat treatment apparatus that simultaneously treats a plurality of substrates is used. Since a large number of substrates are heated at the same time, it takes a long time to raise and lower the temperature, and the temperature in the substrate tends to be non-uniform.
  • the glass substrate when the glass substrate is heated for a long time at a temperature higher than the strain point temperature of the glass substrate, the glass substrate itself contracts and expands to damage the glass.
  • the crystallization temperature of SPC is higher than the glass transition point, the glass substrate is bent or contracted with a slight temperature distribution. As a result, even if crystallization is possible, a process such as an exposure process is hindered and it is difficult to manufacture a device. Higher processing temperatures require higher temperature uniformity. In general, the crystallization rate depends on the heating temperature, and a treatment time of 600 ° C. for 10 to 15 hours, 650 ° C. for 2 to 3 hours, and 700 ° C. for several tens of minutes is required. In order to perform processing without damaging the glass substrate, a long processing time is required, and this method is difficult to adopt for mass production.
  • the present invention has been made against the background of the above circumstances, and a crystalline film capable of efficiently producing a fine crystalline film with little variation in crystal grain size from an amorphous film without damaging the substrate.
  • An object of the present invention is to provide a manufacturing method and a manufacturing apparatus.
  • the amorphous film on the upper layer of the substrate is irradiated with a continuous wave laser beam in the visible wavelength range of 510 to 540 nm, so that the amorphous film exceeds the melting point.
  • the amorphous film is crystallized by heating to a non-temperature.
  • the crystalline film manufacturing apparatus of the present invention has a laser oscillator that outputs a continuous wave laser beam in a visible wavelength range of 510 to 540 nm, and shapes the laser beam output from the laser oscillator and introduces it into an amorphous film.
  • An optical system a scanning device that moves the amorphous film relative to the laser light along a surface direction of the amorphous film; and the amorphous film while the laser light is scanned by the scanning device.
  • an attenuator that adjusts the power density of the laser beam so that the amorphous film is heated to a temperature not exceeding the melting point and crystallized when irradiated.
  • the laser light is effectively absorbed by the amorphous film, and the amorphous film rapidly exceeds the melting point.
  • a uniform fine crystal having a small variation in particle diameter for example, a fine crystal having a size of 50 nm or less, can be obtained by a method different from the conventional melting / recrystallization method.
  • SPC solid phase growth method
  • the amorphous film it is not necessary to preheat the amorphous film other than the continuous wave laser beam, and the amorphous film can be processed efficiently while suppressing the temperature rise of the substrate on which the amorphous film is formed.
  • the same crystallinity can be obtained at the overlapped portion of the laser beam, and the uniformity is improved.
  • the overlapping portion of the laser beam in the amorphous film becomes a crystal of another form, and the uniformity of the crystal is impaired.
  • the underlying substrate is damaged by scanning a continuous-wave laser beam in an amorphous film, particularly amorphous silicon, with a minor axis width of 100 ⁇ m or less along the minor axis width direction and heating in a short time. It is hard to become such temperature.
  • damage to the substrate can be reliably avoided by relatively scanning the laser beam at a high speed to shorten the irradiation time.
  • an amorphous film, particularly amorphous silicon is directly heated with a laser beam having good absorption, there is no need to indirectly provide a laser absorption layer on the amorphous film.
  • an amorphous silicon film having a thickness of 50 to 200 nm is preferable.
  • the absorption rate in the amorphous silicon film is particularly good, and fine crystallization can be performed satisfactorily. If the thickness of the amorphous silicon film is less than 50 nm, the substrate is easily affected by heating, and if it exceeds 200 nm, the entire film is hardly crystallized. However, since the absorption rate of visible light with respect to amorphous silicon varies depending on the film thickness of amorphous silicon, it is preferable to select a film thickness with good absorption.
  • the power density of the laser beam is preferably in the range of 55 to 290 kW / cm 2 on the irradiated surface. If the power density is low, the amorphous film cannot be heated sufficiently and crystallization becomes difficult. On the other hand, if the power density is too high, it becomes difficult to obtain fine crystal grains by heating the amorphous film to a temperature exceeding the melting point. For this reason, the power density of the laser beam is preferably in the above range.
  • the minor axis width of the laser light be 100 ⁇ m or less.
  • the amorphous film can be partially heated rapidly without affecting the substrate.
  • the crystallization process can be performed in a wide region of the amorphous film.
  • the minor axis width is too large, the scanning speed must be increased for efficient crystallization, resulting in an increase in apparatus cost.
  • the amorphous film By scanning the laser beam relative to the amorphous film, the amorphous film can be crystallized along the surface direction.
  • the laser beam side may be moved, the amorphous film side may be moved, or both may be moved.
  • the scanning speed is preferably 50 to 1000 mm / second.
  • the scanning speed is low, the irradiation time is increased, and the film may be heated to a temperature exceeding the melting point to melt or ablate.
  • the scanning speed is high, the irradiation time is reduced, and there are cases where heating cannot be performed to a temperature for solid-phase crystallization.
  • the amorphous film on the upper layer of the substrate is irradiated with a continuous wave laser beam having a visible wavelength range of 510 to 540 nm, and the amorphous film is formed. Since the amorphous film is crystallized by heating the material film to a temperature not exceeding the melting point, it can be processed at a low temperature even if the transition point of the substrate is not exceeded or exceeded. It can be crystallized by heating to a high temperature. At the same time, there is an effect that microcrystals of 50 nm or less can be formed in a short time.
  • a substrate 6 used in a flat panel display TFT device is targeted, and an amorphous silicon thin film 6a is formed on the substrate 6 as an amorphous film.
  • the type of the target substrate and the amorphous film formed thereon is not limited thereto.
  • the amorphous silicon thin film 6a is formed on the upper layer of the substrate 6 by a conventional method.
  • FIG. 1 shows a continuous wave solid state laser annealing apparatus 10 used in a method for producing a crystalline film according to an embodiment of the present invention.
  • the continuous wave solid state laser annealing apparatus 10 is a crystalline film according to the present invention. It corresponds to a film manufacturing apparatus.
  • a visible light CW laser oscillator 1 which is a continuous wave solid laser that outputs continuous wave laser light having a wavelength of 510 to 540 nm, is installed on the vibration isolation table 8.
  • a laser shutter 2 for switching between passing and blocking of the laser light 1 a is disposed, and an attenuator (attenuator) 3 is disposed at the passage destination of the laser shutter 2.
  • the attenuator 3 only needs to attenuate the laser light at a predetermined attenuation rate, and the present invention is not limited to a specific one.
  • Total reflection mirrors 40a, 40b, and 40c are disposed on the output side of the attenuator 3, and condensing lenses 41a and 41b are disposed at the deflection destination of the total reflection mirror 40c. These total reflection mirrors 40a to 40c,
  • the optical lenses 41a and 41b constitute an optical system 4.
  • the optical system 4 includes a beam homogenizer or the like (not shown), and the laser light 1a has a predetermined shape such as a rectangular shape or a line beam shape. Beam shaping is possible so that the minor axis width is 5 to 100 ⁇ mm.
  • a substrate mounting table 7 on which the substrate 6 is mounted is installed.
  • the substrate mounting table 7 is movable along the surface direction (XY direction) of the mounting table, and is provided with a scanning device (not shown) that moves the substrate mounting table 7 at high speed along the surface direction. ing.
  • the substrate 6 on which the amorphous silicon thin film 6 a is formed as an upper layer is placed on the substrate placing table 7.
  • the substrate 6 is not heated by a heater or the like.
  • the visible light CW laser oscillator 1 outputs a continuous wave laser beam having a wavelength of 510 to 540 nm, and the laser shutter 2 is opened to allow the laser beam 1a to pass therethrough.
  • the continuous wave laser beam 1a output from the visible light CW laser oscillator 1 reaches the attenuator 3 after passing through the laser shutter 2, and is attenuated at a predetermined attenuation rate by passing through the attenuator 3.
  • the attenuation factor is set so that the laser beam has a power density defined by the present invention on the processed surface.
  • the attenuator 3 may change the power density by making the attenuation rate variable.
  • the power density may be adjusted by adjusting the output in the laser light source without using an attenuator.
  • the continuous wave laser beam 1a whose power density is adjusted is deflected while being reflected by the total reflection mirrors 40a, 40b, and 40c, and collected by the condenser lenses 41a and 41b. At this time, it passes through a beam homogenizer or the like (not shown).
  • the oscillation laser beam 1 a is shaped into a rectangular or line beam shape having a minor axis width of 100 ⁇ m or less, and is irradiated toward the substrate 6 at a power density of 55 to 290 kW / cm 2 on the irradiation surface.
  • the substrate mounting table 7 is scanned in the short axis width direction of the laser light beam along the surface of the amorphous silicon thin film 6a by the scanning device. Irradiated while being scanned. At this time, the scanning speed of the continuous wave laser beam is set to 50 to 1000 mm / second so that the continuous wave laser beam is irradiated on the amorphous silicon thin film 6a while moving at a high speed.
  • the pulse laser beam is relatively scanned by moving the substrate mounting table.
  • the pulse laser beam is relatively moved by moving the optical system to which the pulse laser beam is guided at high speed. It is good also as what scans.
  • FIGS. 2 and 3 show SEM photographs of the thin films (No. a to j) irradiated with laser light under each condition.
  • the crystal grains are as small as 50 nm or less and no protrusions are formed. In addition, uniform microcrystals are generated in the overlapping portion.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
PCT/JP2010/057357 2009-05-01 2010-04-26 結晶質膜の製造方法および製造装置 WO2010126001A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020107028510A KR101189647B1 (ko) 2009-05-01 2010-04-26 결정질막의 제조 방법 및 제조 장치
JP2010546167A JP5213192B2 (ja) 2009-05-01 2010-04-26 結晶質膜の製造方法および製造装置
CN201080001857.5A CN102067285A (zh) 2009-05-01 2010-04-26 结晶膜的制造方法及制造装置
TW099113469A TWI435390B (zh) 2009-05-01 2010-04-28 結晶質膜的製造方法以及製造裝置

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Application Number Priority Date Filing Date Title
JP2009-112082 2009-05-01
JP2009112082 2009-05-01

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WO2010126001A1 true WO2010126001A1 (ja) 2010-11-04

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KR101810062B1 (ko) 2011-10-14 2017-12-19 삼성디스플레이 주식회사 레이저 결정화 장치 및 레이저 결정화 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001338873A (ja) * 2000-03-21 2001-12-07 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2006332303A (ja) * 2005-05-26 2006-12-07 Hitachi Displays Ltd 半導体装置の製造方法及び半導体装置
JP2008147487A (ja) * 2006-12-12 2008-06-26 Japan Steel Works Ltd:The 結晶質半導体膜の製造方法および半導体膜の加熱制御方法ならびに半導体結晶化装置

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JPH0851218A (ja) * 1995-06-23 1996-02-20 Asahi Glass Co Ltd 薄膜トランジスタの形成方法
US6872607B2 (en) * 2000-03-21 2005-03-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP5003277B2 (ja) * 2007-05-18 2012-08-15 ソニー株式会社 薄膜の結晶化方法、薄膜半導体装置の製造方法、電子機器の製造方法、および表示装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001338873A (ja) * 2000-03-21 2001-12-07 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2006332303A (ja) * 2005-05-26 2006-12-07 Hitachi Displays Ltd 半導体装置の製造方法及び半導体装置
JP2008147487A (ja) * 2006-12-12 2008-06-26 Japan Steel Works Ltd:The 結晶質半導体膜の製造方法および半導体膜の加熱制御方法ならびに半導体結晶化装置

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KR20110008339A (ko) 2011-01-26
JP5213192B2 (ja) 2013-06-19
CN102067285A (zh) 2011-05-18
JPWO2010126001A1 (ja) 2012-11-01
KR101189647B1 (ko) 2012-10-12
TW201104755A (en) 2011-02-01
TWI435390B (zh) 2014-04-21

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