KR101189647B1 - 결정질막의 제조 방법 및 제조 장치 - Google Patents

결정질막의 제조 방법 및 제조 장치 Download PDF

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Publication number
KR101189647B1
KR101189647B1 KR1020107028510A KR20107028510A KR101189647B1 KR 101189647 B1 KR101189647 B1 KR 101189647B1 KR 1020107028510 A KR1020107028510 A KR 1020107028510A KR 20107028510 A KR20107028510 A KR 20107028510A KR 101189647 B1 KR101189647 B1 KR 101189647B1
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KR
South Korea
Prior art keywords
film
amorphous
amorphous film
laser light
laser
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KR1020107028510A
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English (en)
Korean (ko)
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KR20110008339A (ko
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료타로 토가시
토시오 이나미
히데아키 쿠사마
테츠타로 카와카미
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가부시끼가이샤 니혼 세이꼬쇼
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Publication of KR20110008339A publication Critical patent/KR20110008339A/ko
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Publication of KR101189647B1 publication Critical patent/KR101189647B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
KR1020107028510A 2009-05-01 2010-04-26 결정질막의 제조 방법 및 제조 장치 KR101189647B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2009-112082 2009-05-01
JP2009112082 2009-05-01
PCT/JP2010/057357 WO2010126001A1 (ja) 2009-05-01 2010-04-26 結晶質膜の製造方法および製造装置

Publications (2)

Publication Number Publication Date
KR20110008339A KR20110008339A (ko) 2011-01-26
KR101189647B1 true KR101189647B1 (ko) 2012-10-12

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KR1020107028510A KR101189647B1 (ko) 2009-05-01 2010-04-26 결정질막의 제조 방법 및 제조 장치

Country Status (5)

Country Link
JP (1) JP5213192B2 (zh)
KR (1) KR101189647B1 (zh)
CN (1) CN102067285A (zh)
TW (1) TWI435390B (zh)
WO (1) WO2010126001A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101810062B1 (ko) 2011-10-14 2017-12-19 삼성디스플레이 주식회사 레이저 결정화 장치 및 레이저 결정화 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001338873A (ja) * 2000-03-21 2001-12-07 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2006332303A (ja) * 2005-05-26 2006-12-07 Hitachi Displays Ltd 半導体装置の製造方法及び半導体装置
JP2008147487A (ja) * 2006-12-12 2008-06-26 Japan Steel Works Ltd:The 結晶質半導体膜の製造方法および半導体膜の加熱制御方法ならびに半導体結晶化装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0851218A (ja) * 1995-06-23 1996-02-20 Asahi Glass Co Ltd 薄膜トランジスタの形成方法
US6872607B2 (en) * 2000-03-21 2005-03-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP5003277B2 (ja) * 2007-05-18 2012-08-15 ソニー株式会社 薄膜の結晶化方法、薄膜半導体装置の製造方法、電子機器の製造方法、および表示装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001338873A (ja) * 2000-03-21 2001-12-07 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2006332303A (ja) * 2005-05-26 2006-12-07 Hitachi Displays Ltd 半導体装置の製造方法及び半導体装置
JP2008147487A (ja) * 2006-12-12 2008-06-26 Japan Steel Works Ltd:The 結晶質半導体膜の製造方法および半導体膜の加熱制御方法ならびに半導体結晶化装置

Also Published As

Publication number Publication date
CN102067285A (zh) 2011-05-18
JPWO2010126001A1 (ja) 2012-11-01
TW201104755A (en) 2011-02-01
KR20110008339A (ko) 2011-01-26
JP5213192B2 (ja) 2013-06-19
WO2010126001A1 (ja) 2010-11-04
TWI435390B (zh) 2014-04-21

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