WO2010125913A1 - X線散乱測定装置およびx線散乱測定方法 - Google Patents
X線散乱測定装置およびx線散乱測定方法 Download PDFInfo
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- WO2010125913A1 WO2010125913A1 PCT/JP2010/056642 JP2010056642W WO2010125913A1 WO 2010125913 A1 WO2010125913 A1 WO 2010125913A1 JP 2010056642 W JP2010056642 W JP 2010056642W WO 2010125913 A1 WO2010125913 A1 WO 2010125913A1
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/201—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials by measuring small-angle scattering
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
Definitions
- the present invention relates to an X-ray scattering measurement apparatus and an X-ray scattering measurement method suitable for measuring a fine structure on a sample surface.
- Patent Document 1 Some techniques relating to such small-angle scattering attempt to achieve high resolution by focusing an X-ray on a detector using an optical element (see, for example, Patent Document 1).
- the two-dimensional small-angle X-ray camera described in Patent Document 1 forms a two-dimensional beam that is well defined by a combination of a microfocus source and a two-dimensional multilayer optical element.
- Non-Patent Document 1 also discloses an optical system that collects light by arranging two mirrors adjacent to each other.
- Patent Document 2 a technique for focusing the X-ray on the sample is also disclosed (for example, see Patent Document 2).
- horizontal X-rays are converged by a first mirror
- vertical X-rays are converged by a second mirror to be focused on a 0.1 mm ⁇ 0.1 mm region on the sample. ing.
- the nanostructure on the sample surface as described above can be evaluated immediately after the device or the sample is produced, it is effective in terms of simplicity.
- an apparatus that can be used in a place that is as large as a laboratory and that can be analyzed sufficiently to be comparable to small-angle scattering with synchrotron radiation is required.
- Patent Document 1 and Non-Patent Document 1 are intended to increase the resolution of the detector by transmitting X-rays through the sample, and are not suitable for measuring the fine structure of the sample surface. Even if such an apparatus is used in an optical system that reflects X-rays from a sample and focuses them on a detector, the spot size is widened in the irradiation direction, and the resolution is reduced in the detector. Moreover, although the apparatus described in Patent Document 2 is focused on the sample, the spot size is widened at the detector and the desired resolution cannot be obtained.
- the present invention has been made in view of such circumstances, and can measure the X-ray intensity subjected to the reflection-type small angle scattering and diffraction with high resolution, and easily and accurately measure the fine structure of the sample surface.
- An object of the present invention is to provide an X-ray scattering measurement apparatus and an X-ray scattering measurement method that can be used.
- an X-ray scattering measurement apparatus is an X-ray scattering measurement apparatus suitable for measurement of a fine structure on a sample surface, and generates an X-ray. And a first mirror that reflects the generated X-rays, a second mirror that reflects the X-rays reflected by the first mirror, and the X-rays that are reflected by the second mirror.
- the light is condensed on the two-dimensional detector in a plane, and the second mirror condenses the X-rays reflected by the first mirror on the sample surface in a plane perpendicular to the sample surface. It is characterized by doing.
- the X-ray scattering measurement apparatus of the present invention condenses X-rays on the sample surface by the second mirror, the spread of the spot size in the irradiation direction can be minimized. Then, reflection-type small angle scattering can be measured without reducing the resolution.
- the surface fine structure having a two-dimensional periodicity can be measured by utilizing X-ray diffraction. Thus, the nanometer-size fine structure of the sample surface can be accurately measured by X-rays.
- the processed shape of a semiconductor or magnetic recording medium made on the substrate surface can be evaluated.
- the optical detection method approaches the fundamental detection limit due to the wavelength limit, but if X-rays are used, there is no such limitation and the ultimate atom Structural measurement to the level becomes possible.
- many of the GISAXS that were conventionally performed with synchrotron radiation can be measured in the laboratory, and sufficient data comparable to that obtained with synchrotron radiation without damaging the sample immediately after device or sample preparation. Can be used to manage the manufacturing process of various devices.
- An X-ray scattering measurement apparatus is an X-ray scattering measurement apparatus suitable for measurement of a fine structure on a sample surface, the X-ray source generating X-rays, and the generated X-ray
- a first mirror that reflects a line
- a second mirror that reflects an X-ray reflected by the first mirror
- the sample that is irradiated with the X-ray reflected by the second mirror.
- a sample stage and a two-dimensional detector for detecting X-rays scattered on the sample surface, wherein the first mirror detects the generated X-rays in a plane perpendicular to the sample surface.
- the second mirror collects the X-ray reflected by the first mirror on the two-dimensional detector in a plane parallel to the sample surface. .
- the X-ray scattering measurement apparatus further includes a mirror support unit that integrally supports the first mirror and the second mirror by disposing the reflecting surfaces so as to be orthogonal to each other,
- the mirror support unit changes the X-ray reflection angle by the first mirror and moves the second mirror perpendicular to the X-ray incident surface, and the X-ray reflection angle by the second mirror.
- a rotary shaft that moves the first mirror perpendicularly to the X-ray incident surface thereof, and is installed so as to be rotatable about two axes.
- the X-ray reflected by the first mirror is focused on the sample surface in a plane perpendicular to the sample surface.
- the mirror is characterized in that the spot size of X-rays on the sample surface can be limited to 50 ⁇ m or less in a direction perpendicular to the sample surface. Thereby, the spread of the spot size in the X-ray irradiation direction can be suppressed, the X-ray scattering intensity reflecting the fine structure formed on the sample surface can be measured with high resolution, and the fine structure can be accurately measured.
- the first mirror for condensing the generated X-rays on the detector in a plane parallel to the sample surface is provided on the detector.
- the X-ray spot size is about 200 ⁇ m or about the pixel size of the detector in the direction parallel to the sample surface.
- the sample stage is provided so as to be capable of rotating to change the incident angle of the generated X-ray to the sample surface and in-plane rotation of the sample surface. It is characterized by having.
- the diffraction X-rays from the periodic structure formed on the sample surface are rotated in the azimuth direction so as to satisfy the Bragg diffraction condition, and a large number of diffraction peaks are detected, and the pitch and line width of the periodic structure are reduced. It can be measured with high accuracy. Further, the inclination and roughness of the side wall can be independently evaluated with respect to the cross-sectional shape of the structure provided periodically. In this way, the features of the fine structure can be specified accurately.
- the X-ray scattering measurement apparatus is characterized in that the first or second mirror is a multilayer mirror.
- the first or second mirror can change the lattice constant depending on the incident position of the X-ray. Therefore, diffraction can be caused by adjusting the lattice constant even when the incident angle changes.
- the X-ray having the wavelength of the characteristic line (CuK ⁇ ) is selectively extracted for condensing on the two-dimensional detector by the first mirror and condensing on the sample surface by the second mirror. Low measurement is possible.
- the X-ray scattering measurement apparatus is characterized in that the first or second mirror is formed of a crystal plate. Thereby, for example, the first or second mirror can extract only the X-ray of K ⁇ 1. As a result, highly monochromatic X-rays can be produced, and detection with higher resolution is possible.
- the X-ray scattering measurement apparatus is characterized in that a set of collimation blocks is provided in an X-ray passage portion between the second mirror and the sample. As a result, X-rays can be accurately blocked and the accuracy of collimation can be increased.
- An X-ray scattering measurement method is an X-ray scattering measurement method suitable for measuring a fine structure on a sample surface, and X-rays generated by an X-ray source are detected by a first mirror. Reflecting, reflecting the X-ray reflected by the first mirror by a second mirror, causing the X-ray reflected by the second mirror to enter the sample, and the sample surface Detecting the X-rays scattered by the two-dimensional detector, condensing the generated X-rays by the first mirror, and by the second mirror and by the first mirror.
- the reflected X-rays are condensed, and a condensing position in a plane parallel to the sample surface is set on the two-dimensional detector, and a condensing position in a plane perpendicular to the sample surface is set as the sample Detecting X-rays scattered at a small angle on the surface of the sample. It is set to.
- the X-ray scattering measurement method is an X-ray scattering measurement method suitable for measurement of a fine structure on a sample surface, and X-rays generated by an X-ray source are detected by a first mirror. Reflecting, reflecting the X-ray reflected by the first mirror by a second mirror, causing the X-ray reflected by the second mirror to enter the sample, and the sample surface Detecting the X-rays scattered by the two-dimensional detector, condensing the generated X-rays by the first mirror, and by the second mirror and by the first mirror.
- the reflected X-rays are condensed, and a condensing position in a plane parallel to the sample surface is set on the two-dimensional detector, and a condensing position in a plane perpendicular to the sample surface is set as the sample
- the sample is rotated on the surface while the sample is rotated within the surface of the sample. It is characterized by detecting the X-rays diffracted by the periodic structure of the surface.
- the X-ray intensity subjected to reflection type small angle scattering and diffraction can be measured with high resolution, and the fine structure of the sample surface can be measured easily and accurately.
- FIG. 1 is a perspective view showing the configuration of the X-ray scattering measurement apparatus 100.
- the X-ray scattering measurement apparatus 100 includes a sample stage 110, arms 120 and 130, an X-ray source 140, a mirror unit 150, a slit unit 160, a two-dimensional detector 170, and a beam stop 180. .
- the sample stage 110 supports the sample S on a flat stage, and has a fixed part 111, a vertically movable part 112, a rotationally movable part 113, and an XY stage 114.
- the fixing unit 111 supports and fixes the entire sample stage 110.
- the up and down movable unit 112 is connected to the fixed unit 111 and receives the operation to move the XY stage 114 up and down in the Z direction perpendicular to the stage surface (sample surface). Thereby, the Z position of the sample S can be adjusted before X-ray irradiation.
- the rotary movable unit 113 is connected to the vertical movable unit 112 and rotates the XY stage 114 within the plane of the stage ( ⁇ direction) in response to the operation. With this rotating shaft, the orientation of the sample S can be adjusted before X-ray irradiation, and the sample S can be rotated during X-ray irradiation. As a result, when the diffraction pattern by the periodic structure is measured, the scattering intensity by the sample S can be measured while satisfying the diffraction conditions.
- the XY stage 114 is provided on the rotary movable unit 113, and the sample S can be fixed on the stage.
- the stage can be moved by the operation in the direction of intersection (X direction) between the stage surface and the X-ray incident surface and in the direction parallel to the stage surface and perpendicular to the X direction (Y direction). Thereby, the position in the XY plane of the sample S can be adjusted before X-ray irradiation.
- Sample S is a member having a fine structure on the surface.
- the X-ray scattering measurement apparatus 100 is effective in measuring a diffraction pattern for a substrate having a nanometer-sized periodic structure on the sample surface. Therefore, it can be applied to the measurement of the surface structure of various devices formed by lines & spaces or dots. Moreover, you may analyze the pattern of the small angle scattering of the structure which has a nanometer size even if it is not a periodic structure. For example, it can be used to measure nanodots formed on a silicon substrate.
- the sample S is arranged by adjusting the orientation in the plane of the sample S so that the directionality of the sample S matches the directionality of the incident X-rays. .
- the arm 120 receives the operation of the X-ray source 140, rotates the mirror unit 150 and the slit portion 160 around the sample position, and changes the incident angle ⁇ of the X-ray to the sample S.
- the arm 130 rotates the two-dimensional detector 170 around the sample position to adjust the origin position of the emission angle ⁇ .
- the X-ray source 140 generates X-rays.
- the generated X-rays enter the sample S via the mirror unit 150 and the slit portion 160.
- the mirror unit 150 has two mirrors and a mirror adjustment mechanism. Details of the two mirrors and the mirror adjusting mechanism will be described later.
- the slit portion 160 is provided to further narrow down the X-rays reflected by the mirror, but is not necessary if the light collected by the mirror is sufficient.
- the slit portion 160 is constituted by two collimation blocks 161 and 162, for example, but may be a knife edge instead of the collimation block.
- the collimation blocks 161 and 162 are formed of a member capable of blocking X-rays, and can accurately prevent X-rays and increase the accuracy of collimation.
- the collimation blocks 161 and 162 are installed between the second mirror 152 and the sample S in order to focus the X-ray beam, and are also called crack blocks.
- the bottom surface of one block is substantially parallel to the top surface of the other block, and these blocks are rotatable about the pivot axis 163 relative to the beam.
- the positions of the collimation blocks 161 and 162 can be easily adjusted by rocking around a pivot axis 163 at the center between the collimation blocks as shown in FIG.
- the center of rotation can also be the corner of one of the collimation blocks 161, 162.
- the two-dimensional detector 170 detects X-rays scattered on the surface of the sample S.
- the optical system of the X-ray scattering measurement apparatus 100 is configured with a fixed distance L from the sample position to the two-dimensional detector 170.
- the beam stop 180 receives incident X-rays transmitted through or specularly reflected from the sample S.
- FIG. 2 is a plan view showing an optical system of the X-ray scattering measurement apparatus 100.
- FIG. 3 is a side view showing the optical system of the X-ray scattering measurement apparatus 100.
- the collimation blocks 161 and 162 are omitted.
- the first mirror 151 reflects the generated X-ray in a plane parallel to the sample surface and collects it on the two-dimensional detector 170. X-rays scattered at the exit angle ⁇ and the in-plane scattering angle 2 ⁇ are detected by the two-dimensional detector 170.
- the first mirror 151 is curved with a predetermined curvature so as to reflect X-rays in a plane parallel to the sample surface and focus the light on the two-dimensional detector 170.
- the second mirror 152 condenses the generated X-rays on the sample surface in a plane perpendicular to the sample surface. X-rays scattered at the scattering angle 2 ⁇ are detected by the two-dimensional detector 170.
- the second mirror 152 is curved with a predetermined curvature so as to reflect the X-ray and collect it on the sample surface.
- the X-rays are focused on the sample surface in a plane perpendicular to the sample surface, and are focused on the two-dimensional detector 170 in a plane parallel to the sample surface.
- an image in the Qy direction can be detected with high resolution for a structure in a direction parallel to the sample surface.
- an image in the Qz direction can be detected with sufficient intensity.
- the first mirror 151 is close to the X-ray source 140 so that the X-ray generated from the X-ray source 140 is reflected in the order of the first mirror 151 and the second mirror 152 and is incident on the sample S.
- the second mirror 152 is installed at a position close to the sample S. As described above, the spot size on the sample surface can be reduced by installing the second mirror 152 that condenses on the sample surface at a position close to the sample S. However, when the same effect is expected, the condensing position by the first mirror 151 and the condensing position by the second mirror 152 may be interchanged.
- any of a total reflection mirror, a multilayer mirror, and a crystal plate is used for the first mirror 151 or the second mirror 152.
- the total reflection mirror is formed by curving a glass plate itself or a reflection plate formed by depositing Ni (nickel), Au (gold), Pt (platinum) or the like on the surface of the glass plate. .
- the multilayer mirror is formed by alternately laminating layers having different electron densities on a substrate having a smooth surface.
- Specific X-rays for example, CuK ⁇ rays can be efficiently diffracted by periodically repeating a multi-layered multilayer structure.
- a glass plate, a silicon wafer or the like is used as the material of the substrate.
- the first mirror 151 or the second mirror 152 can change the lattice constant depending on the X-ray incident position. Therefore, even when the incident angle ⁇ changes, diffraction can be caused by adjusting the lattice constant.
- the X-rays having the wavelength of the characteristic line (CuK ⁇ ) are selectively extracted. Low background measurement is possible.
- the crystal plate can be formed using a single crystal plate such as ⁇ -SiO 2 (quartz), Si (silicon), or Ge (germanium).
- a single crystal plate such as ⁇ -SiO 2 (quartz), Si (silicon), or Ge (germanium).
- the X-ray spot size in the direction perpendicular to the X-ray incident surface at the position of the sample S can be reduced.
- the resolution in the two-dimensional detector 170 can be improved, which is suitable for measurement of the fine structure on the sample surface.
- the first mirror 151 and the second mirror 152 are formed so as to have different focal lengths. In use, each mirror is used to focus the X-rays at a predetermined position. It is necessary to finely adjust the reflection angle.
- a mirror adjustment mechanism of the mirror unit 150 will be described.
- FIG. 4 is a perspective view of the inside of the mirror unit 150.
- the mirror support unit 153 integrally supports the first mirror 151 and the second mirror 152 in a state where the reflecting surfaces are adjusted so as to be orthogonal to each other.
- the mirror support portion 153 is rotatably installed on a rotation axis A1 that changes the reflection angle of the first mirror 151 and moves the second mirror 152 perpendicularly to the X-ray incident surface.
- the reflection angle of the second mirror 152 is changed, and the first mirror 151 is rotatably installed on a rotation axis B1 that moves the first mirror 151 perpendicularly to the X-ray incident surface.
- the mirror support portion 153 is installed so as to be rotatable about two axes of the rotation axis A1 and the rotation axis B1.
- the rotation axis A1 is parallel to the axis A2 perpendicular to the surface of the second mirror 152
- the rotation axis B1 is parallel to the axis B2 perpendicular to the surface of the first mirror 151.
- the rotation axis A1 is orthogonal to the axis B2, and the rotation axis B1 is orthogonal to the axis A2.
- the mirror can be displaced by bringing the tip of a screw (not shown) into contact with the mirror and turning the screw or turning it back. An elastic force is applied to the mirror so that the tip of the screw always contacts the mirror.
- the rotation axis A ⁇ b> 1 is preferably set at the center of the first mirror 151 in the X-ray incident direction.
- the rotation axis B1 is preferably set at the center of the second mirror in the X-ray incident direction.
- the second mirror 152 can limit the X-ray spot size on the sample surface to 50 ⁇ m or less in a plane perpendicular to the sample surface.
- the spot size can be limited to 30 ⁇ m or less, and more preferably 20 ⁇ m or less.
- the spot size in a plane parallel to the sample surface is about 200 ⁇ m when measuring a periodic structure of about 100 nm, and may be adjusted to the size of the two-dimensional detector 170.
- the X-rays generated from the X-ray source 140 are reflected in the order of the first mirror 151 and the second mirror 152 and are incident on the sample S.
- the light is condensed on the two-dimensional detector 170 in a plane parallel to the sample surface by the first mirror 151, and is also applied to the sample surface in a plane perpendicular to the sample surface by the second mirror 152. Condensate.
- the two-dimensional detector 170 detects X-rays scattered by irradiating the sample surface with X-rays at a small incident angle.
- the X-ray intensity corresponding to the X-ray emission angle ⁇ and the in-plane scattering angle 2 ⁇ is measured.
- the sample S is measured while rotating in the plane about the Z axis as necessary.
- the obtained small angle scattering pattern or diffraction pattern includes information on the three-dimensional shape of the sample surface.
- a sample model is assumed based on parameters specifying the shape of the unit structure of the periodic structure of the sample S, the X-ray scattering intensity is calculated by simulation, and the X-ray scattering calculated by the sample model based on this is calculated. Fit the intensity to the measured scattering intensity. As a result of the fitting, it is possible to determine the optimum value of the parameter that specifies the shape of the unit structure.
- Example 1 Actually, an X-ray scattering measurement apparatus 100 having the above-described configuration was produced.
- the first mirror 151 is arranged so as to focus the X-rays in a plane perpendicular to the sample surface at the sample position, and is parallel to the sample surface at a position 400 mm from the sample position.
- a second mirror 152 was arranged to focus the X-rays in the plane.
- FIG. 5 is a diagram showing the relationship between the distance from the X-ray source 140 at the sample position and the full width at half maximum of the beam. As shown in FIG. 5, it was confirmed that the full width at half maximum of the X-ray beam was the smallest at a position of 290 mm from the X-ray source 140.
- FIG. 6 is a diagram showing the relationship between the Z position and the X-ray intensity at the sample position. As shown in FIG. 6, the full width at half maximum of the X-ray beam was about 35 ⁇ m, and it was confirmed that the X-ray was sufficiently focused.
- FIG. 7 is a diagram showing the relationship between the distance from the sample position at the two-dimensional detector position and the full width at half maximum of the beam. As shown in FIG. 7, it was confirmed that the full width at half maximum of the X-ray beam was the smallest at a position 400 mm from the sample position.
- FIG. 8 is a diagram showing the relationship between the Z position and the X-ray intensity at the sample position. As shown in FIG. 8, the full width at half maximum of the X-ray beam was about 230 ⁇ m. In this way, it was confirmed that the light was condensed on the two-dimensional detector 170 by the first mirror 151 and sufficiently condensed on the sample surface by the second mirror 152.
- FIG. 9 is a diagram showing diffraction patterns obtained by experiments.
- the diffraction pattern shown in FIG. 9 is shown as (log scale) data on the two-dimensional detector 170.
- the diffraction pattern shown in FIG. 9 not only a large number of peaks derived from the grating are observed in the in-plane 2 ⁇ direction, but also interference fringes reflecting the height of the grating can be confirmed in the emission angle ⁇ direction.
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Abstract
Description
(全体構成)
図1は、X線散乱測定装置100の構成を示す斜視図である。図1に示すように、X線散乱測定装置100は、試料台110、アーム120、130、X線源140、ミラーユニット150、スリット部160、2次元検出器170およびビームストップ180を備えている。
次に、X線散乱測定装置100の光学系の基本原理とともに各ミラーの特徴を説明する。図2は、X線散乱測定装置100の光学系を示す平面図である。また、図3は、X線散乱測定装置100の光学系を示す側面図である。なお、図2では、コリメーションブロック161、162を省略している。図2に示すように、第1のミラー151は、発生したX線を、試料表面に平行な面内で反射し、2次元検出器170に集光する。出射角βおよび面内の散乱角2θで散乱されたX線は2次元検出器170により検出される。第1のミラー151は、試料表面に平行な面内でX線を反射し2次元検出器170に集光するように所定の曲率で湾曲している。
図4は、ミラーユニット150内部の斜視図である。ミラー支持部153は、第1のミラー151および第2のミラー152を、各反射面が互いに直交するように調整された状態で一体に支持する。ミラー支持部153は、第1のミラー151の反射角を変えるとともに第2のミラー152をそのX線入射面に垂直に移動させる回転軸A1で回転可能に設置されている。また、第2のミラー152の反射角を変えるとともに第1のミラー151をそのX線入射面に垂直に移動させる回転軸B1で回転可能に設置されている。
次に、上記のように構成されたX線散乱測定装置100を用いて試料表面上の微細構造を測定する方法を説明する。まず、試料Sの表面微細構造の方向性を考慮して試料台110に設置する。そして、試料SのZ位置、XY面における位置および試料Sの向きを調整する。第1のミラー151および第2のミラー152は、あらかじめ焦点位置をそれぞれ2次元検出器および試料位置に合わせるよう微調整しておく。
実際に、上記の構成を有するX線散乱測定装置100を作製した。作製されたX線散乱測定装置100では、試料位置に試料表面に垂直な面内でX線を集束させるよう第1のミラー151を配置し、試料位置から400mmの位置に、試料表面に平行な面内でX線を集束させるよう第2のミラー152を配置した。
作製したX線散乱測定装置100を用い、シリコン基板表面に100nmピッチのグレーティング試料に入射角0.16°でX線を照射し、試料をZ軸回りで回転させながら測定した。図9は、実験により得られた回折パターンを示す図である。図9に示す回折パターンは、2次元検出器170上の(ログスケール)データとして示されている。図9に示す回折パターンでは、面内2θ方向にグレーティングに由来する多数のピークが観測されているだけでなく、出射角β方向にも、グレーティングの高さを反映した干渉縞を確認できた。これらのデータを解析することにより、非破壊でグレーティングの2次元断面を測定することができる。
110 試料台
111 固定部
112 上下可動部
113 回転可動部
114 XYステージ
120、130 アーム
140 X線源
150 ミラーユニット
151 第1のミラー
152 第2のミラー
153 ミラー支持部
160 スリット部
161、162 コリメーションブロック
163 旋回軸
170 2次元検出器
180 ビームストップ
A1 回転軸
B1 回転軸
A2 回転軸A1に平行な軸
B2 回転軸B1に平行な軸
S 試料
Claims (16)
- 試料表面上の微細構造の計測に適したX線散乱測定装置であって、
X線を発生させるX線源と、
前記発生したX線を反射する第1のミラーと、
前記第1のミラーで反射されたX線を反射する第2のミラーと、
前記第2のミラーで反射されたX線が照射される前記試料を支持する試料台と、
前記試料表面で散乱したX線を検出する2次元検出器と、を備え、
前記第1のミラーは、前記発生したX線を、前記試料表面に平行な面内で前記2次元検出器上に集光し、
前記第2のミラーは、前記第1のミラーで反射されたX線を、前記試料表面に垂直な面内で前記試料表面上に集光することを特徴とするX線散乱測定装置。 - 前記第1のミラーおよび第2のミラーを反射面が互いに直交するように配置して一体に支持するミラー支持部を更に備え、
前記ミラー支持部は、前記第1のミラーによるX線の反射角を変えるとともに前記第2のミラーをそのX線入射面に垂直に移動させる回転軸と、前記第2のミラーによるX線の反射角を変えるとともに前記第1のミラーをそのX線入射面に垂直に移動させる回転軸とで、2軸回転可能に設置されていることを特徴とする請求項1記載のX線散乱測定装置。 - 前記第2のミラーは、前記試料表面でのX線のスポットサイズを、前記試料表面に垂直な方向について、50μm以下に制限可能であることを特徴とする請求項1記載のX線散乱測定装置。
- 前記試料台は、前記発生したX線の前記試料表面への入射角を変える回転および前記試料表面の面内回転を可能に設けられていることを特徴とする請求項1記載のX線散乱測定装置。
- 前記第1または第2のミラーは、多層膜ミラーであることを特徴とする請求項1記載のX線散乱測定装置。
- 前記第1または第2のミラーは、結晶板で構成されていることを特徴とする請求項1記載のX線散乱測定装置。
- 前記第2のミラーと前記試料との間のX線通路部に、1組のコリメーションブロックを備えることを特徴とする請求項1記載のX線散乱測定装置。
- 試料表面上の微細構造の計測に適したX線散乱測定装置であって、
X線を発生させるX線源と、
前記発生したX線を反射する第1のミラーと、
前記第1のミラーで反射されたX線を反射する第2のミラーと、
前記第2のミラーで反射されたX線が照射される前記試料を支持する試料台と、
前記試料表面で散乱したX線を検出する2次元検出器と、を備え、
前記第1のミラーは、前記発生したX線を、前記試料表面に垂直な面内で前記試料表面上に集光し、
前記第2のミラーは、前記第1のミラーで反射されたX線を、前記試料表面に平行な面内で前記2次元検出器上に集光することを特徴とするX線散乱測定装置。 - 前記第1のミラーおよび第2のミラーを反射面が互いに直交するように配置して一体に支持するミラー支持部を更に備え、
前記ミラー支持部は、前記第1のミラーによるX線の反射角を変えるとともに前記第2のミラーをそのX線入射面に垂直に移動させる回転軸と、前記第2のミラーによるX線の反射角を変えるとともに前記第1のミラーをそのX線入射面に垂直に移動させる回転軸とで、2軸回転可能に設置されていることを特徴とする請求項8記載のX線散乱測定装置。 - 前記第1のミラーは、前記試料表面でのX線のスポットサイズを、前記試料表面に垂直な方向について、50μm以下に制限可能であることを特徴とする請求項8記載のX線散乱測定装置。
- 前記試料台は、前記発生したX線の前記試料表面への入射角を変える回転および前記試料表面の面内回転を可能に設けられていることを特徴とする請求項8記載のX線散乱測定装置。
- 前記第1または第2のミラーは、多層膜ミラーであることを特徴とする請求項8記載のX線散乱測定装置。
- 前記第1または第2のミラーは、結晶板で構成されていることを特徴とする請求項8記載のX線散乱測定装置。
- 前記第2のミラーと前記試料との間のX線通路部に、1組のコリメーションブロックを備えることを特徴とする請求項8記載のX線散乱測定装置。
- 試料表面上の微細構造の計測に適したX線散乱測定方法であって、
X線源で発生したX線を第1のミラーで反射させるステップと、
前記第1のミラーで反射されたX線を第2のミラーで反射させるステップと、
前記第2のミラーで反射されたX線を前記試料に入射させるステップと、
前記試料表面で散乱したX線を2次元検出器で検出するステップと、を含み、
前記第1のミラーで、前記発生したX線を集光するとともに、前記第2のミラーで、前記第1のミラーで反射されたX線を集光し、前記試料表面に平行な面内での集光位置を、前記2次元検出器上とし、前記試料表面に垂直な面内での集光位置を、前記試料表面上としつつ、前記試料表面で小角散乱したX線を検出することを特徴とするX線散乱測定方法。 - 試料表面上の微細構造の計測に適したX線散乱測定方法であって、
X線源で発生したX線を第1のミラーで反射させるステップと、
前記第1のミラーで反射されたX線を第2のミラーで反射させるステップと、
前記第2のミラーで反射されたX線を前記試料に入射させるステップと、
前記試料表面で散乱したX線を2次元検出器で検出するステップと、を含み、
前記第1のミラーで、前記発生したX線を集光するとともに、前記第2のミラーで、前記第1のミラーで反射されたX線を集光し、前記試料表面に平行な面内での集光位置を、前記2次元検出器上とし、前記試料表面に垂直な面内での集光位置を、前記試料表面上としつつ、前記試料を前記試料表面面内で回転させて、前記試料表面における周期構造で回折したX線を検出することを特徴とするX線散乱測定方法。
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