WO2010110052A1 - スパッタ成膜装置 - Google Patents

スパッタ成膜装置 Download PDF

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Publication number
WO2010110052A1
WO2010110052A1 PCT/JP2010/053887 JP2010053887W WO2010110052A1 WO 2010110052 A1 WO2010110052 A1 WO 2010110052A1 JP 2010053887 W JP2010053887 W JP 2010053887W WO 2010110052 A1 WO2010110052 A1 WO 2010110052A1
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WO
WIPO (PCT)
Prior art keywords
substrate
target
gap
holder
discharge space
Prior art date
Application number
PCT/JP2010/053887
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
由雄 川又
Original Assignee
芝浦メカトロニクス株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 芝浦メカトロニクス株式会社 filed Critical 芝浦メカトロニクス株式会社
Priority to CN201080013468.4A priority Critical patent/CN102362005B/zh
Priority to KR1020137029095A priority patent/KR20130133073A/ko
Priority to JP2011505957A priority patent/JP5277309B2/ja
Publication of WO2010110052A1 publication Critical patent/WO2010110052A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Definitions

  • the present invention relates to a sputtering film forming apparatus, and more particularly to a sputtering film forming apparatus that forms an insulating film on a substrate in a state where a bias voltage is also applied to the substrate holder side.
  • the substrate side is usually grounded and a voltage is applied only to the target side, but in some cases, a bias voltage may be applied to the substrate side.
  • a bias voltage may be applied to the substrate side.
  • Patent Document 1 when a titanium oxide film is formed by reactive sputtering in a mixed gas of argon and oxygen, the crystal orientation can be changed by applying a positive bias voltage to the substrate.
  • the film adheres to parts other than the substrate.
  • the film adheres also to the outer peripheral surface of the portion where the substrate is placed.
  • the film to be formed is an insulating film
  • the conductive surface facing the discharge space is insulated. The bias effect on the substrate holder may be lost.
  • the present invention has been made in view of the above-described problems.
  • an insulating film is formed, conduction between the discharge space and the substrate holder facing the discharge space is ensured, and the bias effect on the substrate holder is lost.
  • a sputter deposition apparatus in which there is no need.
  • a conductive target holder and a conductive substrate holder provided to face the target holder are provided, the target is held on the target holder, and the substrate holder is A sputtering film forming apparatus that holds a substrate, applies a voltage to both the target holder and the substrate holder to perform sputtering of the target, and forms an insulating film containing the constituent elements of the target on the substrate,
  • the substrate holder has a gap formed so as to open toward the discharge space, and the gap does not reach the discharge space without insulating particles serving as the insulating film during sputter deposition on the substrate.
  • a sputter deposition apparatus characterized by having a gap size in which an open conductive surface is secured on an inner wall of the gap It is subjected.
  • the insulating film when the insulating film is formed by sputtering, conduction between the discharge space and the substrate holder facing the discharge space is ensured, and the bias effect on the substrate holder is not lost. it can.
  • the schematic diagram which shows schematic structure of the sputter film deposition apparatus which concerns on embodiment of this invention.
  • the graph which shows the relationship between the bias voltage to a substrate side, the film-forming rate, and the refractive index of the formed silicon oxide film in the case of forming a silicon oxide film on a substrate by reactive sputtering.
  • the graph which shows the result of having measured the difference in the film thickness by performing sputtering film-forming on the conditions which made only the argon gas the gas introduce
  • FIG. 1 is a schematic diagram showing a schematic configuration of a sputter deposition apparatus according to an embodiment of the present invention.
  • the sputter deposition apparatus according to the present embodiment includes an airtight container 11, a substrate holder 14 that holds the substrate 5, a backing plate 12 that is a target holder that holds the target 13, and the like.
  • a gas introduction port 16 and an exhaust port 17 are formed in the wall portion of the hermetic container 11.
  • the gas introduction port 16 is connected to a gas supply system such as a gas supply pipe and a gas supply source. It is connected to a vacuum exhaust system such as a pump. By controlling the gas introduction amount and the exhaust amount, the inside of the hermetic container 11 (the processing chamber) can be brought to a desired pressure with a desired gas.
  • a backing plate 12 is provided on the top of the hermetic container 11, and a substrate holder 14 is provided on the bottom of the hermetic container 11 so as to face the backing plate 12.
  • a space between the backing plate 12 and the substrate holder 14 in the processing chamber inside the hermetic container 11 functions as a discharge space 10.
  • Both the backing plate 12 and the substrate holder 14 are made of a metal material (including an alloy) and have conductivity.
  • the backing plate 12 is connected to a power source 21, and the substrate holder 14 is connected to a power source 22.
  • reactive sputtering is performed by introducing a reactive gas into the discharge space 10 and forming a reaction product of the reactive gas and a constituent element of the target 13 on the substrate 5 as an insulating film.
  • the target 13 is made of silicon (Si)
  • a mixed gas of argon (Ar) gas and oxygen (O 2 ) gas is introduced into the discharge space 10
  • a silicon oxide film (SiO 2 ) is introduced into the substrate 5. Film) is formed.
  • a negative voltage is applied to the target 13 side and a positive voltage is applied to the substrate 5 side to cause discharge in the discharge space 10.
  • the gas introduced into the discharge space 10 is turned into plasma, and the positive ions generated thereby are accelerated toward the target 13 and collide with the target 13.
  • silicon particles constituting the target 13 are sputtered (struck out) from the target 13, and the silicon particles react with oxygen and adhere and deposit on the substrate 5 as a silicon oxide film.
  • the film formation rate can be improved by increasing the applied voltage to the target.
  • the voltage applied to the target is increased, cracking occurs particularly in the case of a brittle target.
  • heat radiation of the target during sputtering becomes insufficient, and the bonding layer with the backing plate is heated and peeled off.
  • FIG. 2 shows the bias voltage (horizontal axis) to the substrate side, the deposition rate (vertical axis on the left side), and the silicon oxide formed when the silicon oxide film is formed on the substrate by the reactive sputtering described above.
  • the relationship with the refractive index (right vertical axis) of the film is shown.
  • Argon gas and oxygen gas were introduced into the discharge space, and the partial pressure ratio of oxygen gas was 8.68%.
  • black circle points indicate the film formation rate
  • white circle points indicate the refractive index.
  • the film formation rate increases when a positive bias voltage is applied to the substrate side, and the film formation rate increases remarkably when the substrate bias voltage is +50 V or more. Further, as the film forming rate is improved, the refractive index of the formed silicon oxide film is also increased. This increase in refractive index is thought to be due to the lack of oxygen in the film.
  • the film formation rate varies greatly depending on the degree of oxidation. Therefore, in order to exclude the influence of oxidation, sputter film formation was performed under the condition that the gas introduced into the discharge space was only argon gas, and the difference in film thickness with and without substrate bias was measured. Silicon was used as the target.
  • the horizontal axis indicates the position (Position) in the surface direction on the film formation surface of the substrate, and represents the distance from the center position where 0 is the center position of the substrate (substantially coincides with the center position of the target).
  • the vertical axis in FIG. 3 indicates the thickness (Thickness) of the film formed on the substrate.
  • black dots indicate the results when the substrate bias is 0V (ground), and square points indicate the results when the substrate bias is + 50V.
  • a silicon target is used, a mixed gas of argon gas and oxygen gas is introduced into the discharge space, and the silicon oxide film is reactively sputtered.
  • the film formation rate and the refractive index with respect to the pressure ratio were measured.
  • the horizontal axis represents the oxygen partial pressure ratio
  • the left vertical axis represents the film formation rate
  • the right vertical axis represents the refractive index of the formed silicon oxide film.
  • a graph a represented by a black dot is a film formation rate in the case of no substrate bias (0 V).
  • a graph b represented by black triangular points is a film formation rate when the substrate bias is + 50V.
  • the graph c represented by the white circle points is the refractive index when there is no substrate bias.
  • a graph d represented by white triangular points is a refractive index when the substrate bias is + 50V.
  • the film formation rate can be improved by applying a bias voltage to the substrate in a region having a relatively low oxygen partial pressure ratio.
  • the refractive index is lower when the bias voltage +50 V is applied to the substrate than when there is no substrate bias.
  • the fact that the refractive index decreases when the substrate bias is +50 V means that the oxygen content in the silicon oxide film is larger than that without the substrate bias, and the oxidation near the substrate is promoted. This is because, by applying a bias voltage to the substrate side, the oxygen active species increase due to a decrease in plasma impedance (plasma densification), and negative ions (O ⁇ ) generated by the plasma conversion are positive bias voltage. It is considered that the oxidation was attracted to the substrate and the oxidation was promoted there.
  • the amount of O ⁇ on the target side can be relatively reduced, the target surface oxidation can be suppressed, and the sputter rate, that is, the film formation rate can be reduced due to target surface oxidation. Can be suppressed.
  • FIG. 5 is a graph showing the deposition rate and refractive index in the result of FIG. 4 for each oxygen partial pressure ratio.
  • the case of no substrate bias is represented by a black circle point, and the case of a substrate bias of +50 V is represented by a black square point.
  • the oxygen partial pressure ratio (%) is indicated beside each point.
  • the refractive index is lower with the substrate bias than without the substrate bias, that is, the oxygen content in the film
  • the film formation rate is improved by about 1.5 times.
  • the silicon oxide film adheres to parts other than the substrate.
  • the film adheres also to the outer peripheral surface from the portion where the substrate 5 is placed. Since the silicon oxide film is an insulating film, if the surface exposed to the discharge space 10 in the substrate holder 5 is covered with the silicon oxide film that is an insulating film, the conductive surface facing the discharge space 10 is It becomes an insulating surface, and there is a possibility that the bias effect on the substrate holder 14 as described above may be lost.
  • a portion where the film is difficult to adhere is provided on the substrate holder 14 so that a conductive surface opened to the discharge space 10 is secured during the sputtering film formation.
  • FIG. 6 shows a specific example of the structure.
  • a minute gap 15 is formed on the side facing the discharge space 10.
  • the gap 15 opens toward the discharge space 10 and is formed in, for example, a hole shape or a slit shape.
  • a plurality of gaps 15 are formed over the entire surface of the substrate holder 14 facing the discharge space 10.
  • the radial size of the portion where the gap 15 is formed in the substrate holder 14 is larger than the radial size of the substrate 5, and even if the substrate 5 is placed on the substrate holder 14, all the gaps 15 are blocked by the substrate 5. There is no end to it. That is, one of the gaps 15 (the cap 15 existing on the outer peripheral side of the substrate 5) is in an open state with respect to the discharge space 10.
  • the substrate holder 14 is made of, for example, a metal material and has conductivity, and the inner wall surface of the gap 15 is a conductive surface. Therefore, when a bias voltage is applied to the substrate holder 14, the inner wall surface of the gap 15 is also set to a desired bias potential.
  • the fact that the inner wall surface of the gap 15 is not covered with the insulating film 30 can ensure a conductive surface open to the discharge space 10. That is, a conductive portion with the discharge space 10 can be secured on the side facing the discharge space 10 in the substrate holder 14, and the above-described effect due to the bias voltage applied to the substrate holder 14 can be reliably obtained.
  • the present inventor studied as described below for an appropriate gap size of the gap 15 that can secure a conductive surface inside the gap 15 during film formation.
  • the mean free path of the insulator particles is estimated to be about 1 mm.
  • the mean free path of 1 mm represents that the above-mentioned insulator particles collide with other molecules and the like with a probability of 70% when they advance by 1 mm.
  • the insulator particles that have entered the gap 15 collide with molecules or the like, they may be repelled in any direction, but are hardly repelled in the traveling direction (below in FIG. 6).
  • the particles bounced in the gap 15 except directly below have a diameter or width of the gap 15 equal to or less than the mean free path (1 mm in the above example), and the depth or depth dimension of the gap 15 is three times or more of the mean free path. If it is 3 mm or more in the above example, it is considered that it adheres to the side wall of the gap 15 before reaching the hole bottom 15a of the gap 15 and does not adhere to the hole bottom 15a.
  • the particles that have entered the gap 15 do not collide with other molecules even if they travel 1 mm with a probability of 30%. Therefore, when considering a particle that enters straight into the gap 15 and proceeds toward the hole bottom 15a, if the depth of the gap 15 is 1 mm or less, the particle does not collide with molecules or the like with a probability of 30%. Will reach. Therefore, as a result of studies by the present inventor, if the depth or depth dimension of the gap 15 is set to 3 times or more of the mean free path, the particles that have entered the gap 15 do not collide with molecules and the like in the hole bottom 15a. The probability of reaching was about 0.01%, and it was concluded that the hole bottom 15a was hardly reached.
  • the insulator particles are contained in the gap 15. Even if they enter, most of them adhere to the side wall of the gap 15 before reaching the hole bottom 15a, so that it can be said that the hole bottom 15a is not covered with an insulator and a conductive surface can be secured.
  • the pressure in the discharge space 10 is 5 Pa.
  • the mean free path generally depends on the gas pressure, for example, when the gas pressure is 1 Pa, the mean free path is simply 5 times that of 5 Pa. If the diameter or width of the gap 15 is 5 mm or less and the depth of the gap 15 is 15 mm or more which is three times or more of the diameter or width, it is possible to reliably prevent the insulator from adhering to the hole bottom 15a. Can be secured.
  • FIG. 6 illustrates a structure in which a hole or slit-shaped cap 15 is formed on the substrate holder 14.
  • a conductive surface that leads to the discharge space 10 without being covered with an insulating film can be secured on the substrate holder 14 even during sputtering film formation.
  • the structure is not limited to that shown in FIG.
  • the gap is not limited to a shape that extends straight in the thickness direction of the substrate holder 14, but may be bent in the lateral direction or extended obliquely.
  • FIG. 7 shows another specific example of the substrate holder. Also in the substrate holder 41, a minute gap 42 opening toward the discharge space 10 is formed on the side facing the discharge space 10.
  • a gas introduction chamber 43 communicating with the gap 42 on the opposite side of the discharge space 10 is formed inside the substrate holder 41.
  • the gas introduction chamber 43 is connected to a gas supply system outside the processing chamber through a gas introduction path 44 formed on the opposite side of the substrate holding surface of the substrate holder 41.
  • a reactive gas oxygen gas in the above example
  • oxygen gas oxygen gas in the above example
  • oxygen gas can be efficiently supplied to the vicinity of the substrate 5. That is, the silicon formed on the substrate 5 is promoted by the oxidation near the substrate 5 while suppressing the reduction of the sputtering rate by relatively reducing the oxygen concentration on the target side and suppressing the oxidation of the target surface. Prevents the oxide film from running out of oxygen.
  • the substrate holder 41 includes a holding mechanism (not shown) for stably holding the substrate 5 on the substrate holder 41.
  • the holding mechanism include a mechanism that mechanically presses the substrate 5 against the substrate holder 41 or an electrostatic chuck. Even if the substrate 5 receives the gas pressure blown from the gap 42 by this holding mechanism, the substrate 5 can be stably held with respect to the substrate holder 41.
  • Examples of the substrate to be deposited include a semiconductor wafer, a disk-shaped recording medium, a display panel, a solar cell panel, and a mirror.
  • the insulating film formed on the substrate is not limited to silicon oxide, and may be silicon nitride, titanium oxide, titanium nitride, aluminum oxide, aluminum nitride, niobium oxide, or the like.
  • the target species and the gas species introduced into the discharge space are also appropriately selected according to the film species desired to be deposited on the substrate.
  • Substrate 10 Discharge space 12 Backing plate 13 Target 14 Substrate holder 15 Gap 21 and 22 Power supply 30 Insulating film

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
PCT/JP2010/053887 2009-03-25 2010-03-09 スパッタ成膜装置 WO2010110052A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201080013468.4A CN102362005B (zh) 2009-03-25 2010-03-09 溅射成膜装置
KR1020137029095A KR20130133073A (ko) 2009-03-25 2010-03-09 스퍼터 성막 장치
JP2011505957A JP5277309B2 (ja) 2009-03-25 2010-03-09 スパッタ成膜装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009074881 2009-03-25
JP2009-074881 2009-03-25

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WO2010110052A1 true WO2010110052A1 (ja) 2010-09-30

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JP (1) JP5277309B2 (zh)
KR (2) KR20130133073A (zh)
CN (1) CN102362005B (zh)
TW (1) TWI418646B (zh)
WO (1) WO2010110052A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017026343A1 (ja) * 2015-08-07 2017-02-16 日新電機株式会社 スパッタ装置及び成膜方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101693824B1 (ko) 2014-04-29 2017-01-09 엔에이치엔엔터테인먼트 주식회사 어플리케이션의 마케팅 채널을 추적하는 방법 및 시스템
CN111081605A (zh) * 2019-12-09 2020-04-28 苏州拓升智能装备有限公司 电极间隔离结构、气相沉积设备和石墨舟

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0641733A (ja) * 1992-07-28 1994-02-15 Matsushita Electric Ind Co Ltd 反応性スパッタリング装置
JP2002115051A (ja) * 2000-10-05 2002-04-19 Anelva Corp バイアススパッタリング装置
JP2005087836A (ja) * 2003-09-16 2005-04-07 Yaskawa Electric Corp 酸化チタン光触媒膜およびその作製方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3787430B2 (ja) * 1998-04-01 2006-06-21 キヤノン株式会社 スパッタリング装置及びそれを用いた薄膜形成法
JP4703828B2 (ja) * 2000-09-07 2011-06-15 株式会社アルバック スパッタリング装置及び薄膜製造方法
KR100639003B1 (ko) * 2005-01-05 2006-10-26 삼성에스디아이 주식회사 기판트레이홀더용 정렬장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0641733A (ja) * 1992-07-28 1994-02-15 Matsushita Electric Ind Co Ltd 反応性スパッタリング装置
JP2002115051A (ja) * 2000-10-05 2002-04-19 Anelva Corp バイアススパッタリング装置
JP2005087836A (ja) * 2003-09-16 2005-04-07 Yaskawa Electric Corp 酸化チタン光触媒膜およびその作製方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017026343A1 (ja) * 2015-08-07 2017-02-16 日新電機株式会社 スパッタ装置及び成膜方法

Also Published As

Publication number Publication date
TWI418646B (zh) 2013-12-11
CN102362005B (zh) 2014-06-18
TW201043714A (en) 2010-12-16
KR20110128951A (ko) 2011-11-30
JP5277309B2 (ja) 2013-08-28
KR20130133073A (ko) 2013-12-05
CN102362005A (zh) 2012-02-22
JPWO2010110052A1 (ja) 2012-09-27

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