201043714 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種濺鍍成膜裝置，尤其是關於一種在亦 對基板座一側施加有偏壓的狀態下，於基板上形成絕緣膜 之濺鍍成膜裝置。 【先前技術】 使靶材與基板對向而進行之濺鍍成膜，通常係將基板側 接地，僅對靶材側施加電壓，但根據情況亦有對基板側施 加偏壓之情形。例如，專利文獻丨中揭示有一種技術，其 係利用在氬與氧之混合氣體中之反應性濺鍍而將氧化鈦膜 成膜之際，對基板施加正偏壓，藉此可改變結晶配向性。 先行技術文獻 特許文獻 專利文獻1:日本特開2005-87836號公報 【發明内容】 發明所欲解決之問題 在濺鍍成膜中，膜亦會附著於基板以外之部份，例如在 基板座上，比載置有基板之部份更靠外周側之表面上，亦 會有膜附著。且，當所形成之膜爲絕緣膜之情形下，若基 板座上相對於放電空間露出之面由於絕緣膜之附著而被:邑 緣膜覆蓋時，則面臨放電空間之導電面將成為絕緣面，因 而有可能喪失對於基板座之偏壓效果。 本發明係鑑於上述之問題而完成者，其目的在於提供一 種在形成絕緣膜之情形下，可確保放電空間與㈣㈣^ 147070.doc 201043714 工間之基板座之間的導通， M小長失對於基板座之偏壓效 果的濺鍍成膜裝置。 解決問題之技術手段 根據本發明之-祕，提供—種濺錢成膜裝置，其特徵 為具備：具有導電性之㈣座、及對向於上述靶材座而設 置之具有導電性之基板座；且，將靶材保持於上述靶材 座，將基板保持於上述基板座，對上錄材座與上述基板 座兩者施加電壓而進行上述乾材之濺鑛，並於上述基板形 成包含上述㈣之構成元素之絕緣膜；又，上述基板座且 有向放電空間形成開口之且上述間隙具有在對上ς 基板之賤鍍成m中使成為上述絕緣膜之絕緣物粒子到 達之間隙尺寸，而於上述間隙之内壁確保相對於上述放電 空間開放之導電面。 發明效果 根據本發明，可在濺鍍成膜絕緣膜之情形下，確保放電 空間與朝向於該放電空間之基板座之間的導通，從而可使 得不會喪失對於基板座之偏壓效果。 【實施方式】 以下’玆參照圖式說明本發明之實施形態。 圖1係顯示本發明之實施形態之濺鍍成膜裝置之概略構 成的模式圖。本實施形態之濺鍍成膜裝置具備：氣密容哭 U、保持基板5之基板座14、作爲保持乾材13之乾材座之 支持襯板12等。 氣密容器11之壁部形成有氣體導入口 16與排氣π # 147070.doc 201043714 給口 16係連接於氣體供給管、氣體供給源等之氣體供 —^排氣口 17係連接於排氣管m等之真空排 氣系統。藉由控制氣體導入量與排氣量，可使氣密容㈣ 處理至内）處於根據期望氣體之所期望之壓力下。 氣mi 11之上部設有支㈣板12，且對向於該支持概 板^而於氣密容器u之底部設有基板座14。a密容器k 内部之處理室内之支持襯板12與基板座14之間的空間係作 0 為放電空間10而發揮功能。 支持襯板12及基板座14皆包含金屬材料（亦包含合金）， 且具有導電性。支持槻板12係連接於電源21，基板座14係 連接於電源22。 在本實施形態中，例如舉例說明於放電空間丨〇導入反應 性氣體，將該反應性氣體與靶材13之構成元素之反應物作 為絕緣膜而形成於基板5之反應性濺鍍。具體而言，靶材 13包含矽（Si)，於放電空間10導入氬（Ar)氣與氧（〇2)氣之混 〇 合氣體，於基板5上形成矽氧化膜（Si02膜）。 又，在本實施形態中，對靶材13側施加負電壓，對基板 5侧施加正電壓’於放電空間1〇產生放電。利用該放電將 導入至放電空間10之氣體電漿化，藉此而生成之正離子向 乾材13被加速而衝撞至乾材13。藉此，將構成乾材13之碎 粒子從靶材13濺出（敲出），且該矽粒子與氧反應，並以矽 氧化膜附著堆積於基板5上。 此處，作為比較例，僅對靶材施加電壓（基板側接地）之 情形下’若增大對乾材之施加電壓，則可謀求成膜速率之 147070.doc 201043714 提高。然而，若增大對於靶材之施加電壓，尤其是脆性靶 材之情形下會產生裂痕。又，在熱傳導率較低之靶材之情 化下，有滅鑛中之㈣之放熱不充分，從而有與支持概板 之間之接合層被加熱而剝離之顧慮。 又’將如上所述之矽氧化膜成膜之反應性濺鍍之情形 下，若導入充分量之氧，則可促進在基板附近之氧化而確 實地形成期望之組成比的矽氧化膜，但亦加快了靶材表面 之氧化，從而使得濺鍍速率即對基板上之成膜速率降低。 若為抑制靶材表面之氧化而減少氧導入量，則有可能導致 所形成之矽氧化膜中之氧不足，而無法獲得期望特性之矽 氧化膜。即，先前難以同時實現成膜速率之提高、與氧化 促進。 與此相對，在本實施形態中，亦對基板5側施加偏壓， 藉此如下所述，可謀求同時實現成膜速率之提高、與氧化 促進。 圖2係顯示在利用上述之反應性濺鍍，於基板上進行矽 氧化膜形成之情形下，對基板侧之偏壓（橫軸）、成膜速率 (左側之縱軸）、及所形成之矽氧化膜之折射率（右側之縱 軸)的關係。於放電空間導入氬氣與氧氣，令氧氣之分壓 比為8.68 %。標繪圖中，黑關表示成膜速率，白圓圈表 示折射率。 根據該圖2之結果，對基板側施加正偏壓之情形下，成 膜速率有所增加，尤其是基板偏壓為+50 V以上時，成臈 速率顯著增大。又，隨著成膜速率之提高，觀察到所形成 147070.doc 201043714 之矽氧化膜之折射率亦增加。該折射率之增加被認爲係由 膜中之氧不足所引起。 再者，在上述之反應性濺鍍中，因氧化之程度會使成膜 速率發生較大變化《因此，為消除氧化之影響，在令導入 ‘至放電空間之氣體僅為氬氣之條件下進行濺鍍成膜，並測 定根據基板偏壓有無之膜厚之差異。靶材係使用矽。 將其結果顯示於圖3。在圖3中，橫軸表示基板之被成膜 0 面之面方向之位置（Positi〇n) ’將基板之中心位置（與靶材 之中心位置大致一致）設為〇，表示距離該中心位置之距 離。圖3之縱軸表示形成於基板上之膜之膜厚 (Thickness)。在該圖3之標繪圖中’黑圓圈係表示將基板 偏壓設為0 V(接地）時之結果，四邊形係表示將基板偏壓設 為+50 V時之結果。 根據該圖3之結果可知，藉由對基板側施加+5〇 v之偏 壓相較於偏壓為0 V之情形，使膜厚即成膜速率平均增 ❹ 加36 %。由未使用氧氣之該圖3之結果，認為成膜速率之 增加並非基於氧化量之變化，而是基於以下之現象。 即發明人荨認爲藉由對基板側施加正偏壓，使放電空 間中之電漿阻抗降低而高密度電漿化，因由此所導致之放 電電壓之降低而使錢鑛速率提高。且認爲，藉由對把材側 施加負電壓，且對基板側施加正電壓，在放電空間内使正 離子朝乾材被加速之實效之加速電壓增加，因而提高濺鑛 速率。 其次，與上述之實施形態同樣地，使用矽靶材，將氬氣 147070.doc 201043714 與氧氣之混合氣體導入至放電空間，進行矽氧化膜之反應 性濺鍍，並測定根據有無基板偏壓之相對於氧分壓比之成 膜速率與折射率。 將其結果顯示於圖4。在圖4之標繪圖中，橫軸表示氧分 壓比，左側之縱軸表示成膜速率，右側之縱軸表示所形成 之石夕氧化膜之折射率。以黑關表示之 壓時之成膜速率。以黑三角形表示之圖形鴣= 偏壓設為+50 V時之成膜速率。以白圓圈表示之圖·為無 基板偏壓時之折射率。以白三角形表示之圖形d為將基板 偏壓設為+50 V時之折射率。 根據該圖4之社果，茲a + $八,, 、'果藉由在氧刀壓比相對較低之區域内 對基板施加偏壓，可提高成膜速率。 又，在氧分壓比為U〜12 %之區域内，對基板施加谓^ 偏壓之情形，相較於無基板偏壓之情形，其折射率更加降 低。基板偏壓為+50 V時折射率降低，是由於相較於無基 板偏壓時石夕氧化膜中之氧 〜3里平乂夕，使侍在基板附近之氧 化被促進。由此可知’藉由對基板側施加偏壓使電漿阻抗 降低（電漿高密度化）所致之氧 軋古挫種增加，且，因電漿化 生成之負離子（〇-)被正偏壓引 ^ 晰！及5丨，而聚集於基板附近， 從而促進此處之氧化。 #Ι^η.θ 藉由〇被吸引於基板側，靶材 :之0夏可相對減少’從而可抑制挺材表面之氧化，且可 Ρ制因靶材表面氧化而導致之 低 錢鑛速率即成膜速率之降 又 圖5係將圖4之結果之 成膜速度與折射率就各氧分壓 147070.doc 201043714 以黑圓圈表示無基板偏壓之情形，以201043714 VI. Description of the Invention: [Technical Field] The present invention relates to a sputtering film forming apparatus, and more particularly to an insulating film formed on a substrate while a bias is applied to one side of the substrate holder. Sputtering film forming device. [Prior Art] When the target material and the substrate are opposed to each other by sputtering, the substrate side is usually grounded, and only a voltage is applied to the target side. However, depending on the case, the substrate side may be biased. For example, the patent document discloses a technique for applying a positive bias to a substrate by forming a titanium oxide film by reactive sputtering in a mixed gas of argon and oxygen, whereby the crystal alignment can be changed. Sex. [Problem to be Solved by the Invention] In the sputtering film formation, the film may adhere to a portion other than the substrate, for example, on the substrate holder. There is also a film adhesion on the outer peripheral side of the portion on which the substrate is placed. Further, when the formed film is an insulating film, if the surface exposed on the substrate holder with respect to the discharge space is covered by the insulating film, the conductive surface facing the discharge space becomes an insulating surface. Therefore, it is possible to lose the bias effect on the substrate holder. The present invention has been made in view of the above problems, and an object thereof is to provide a conduction between a discharge space and a substrate holder of (4)(4)^147070.doc 201043714 in the case of forming an insulating film, A sputtering film forming apparatus for biasing the substrate holder. Means for Solving the Problem According to the present invention, there is provided a particle-spraying film forming apparatus comprising: a conductive (four) seat; and a substrate holder having electrical conductivity disposed opposite to the target holder And holding the target in the target holder, holding the substrate on the substrate holder, applying a voltage to both the upper substrate and the substrate holder to perform sputtering of the dry material, and forming the substrate on the substrate (4) an insulating film of the constituent elements; further, the substrate holder has an opening formed in the discharge space, and the gap has a gap size at which the insulating particles reaching the insulating film are formed by plating the upper surface of the upper substrate with m The inner wall of the gap ensures a conductive surface that is open relative to the discharge space. EFFECT OF THE INVENTION According to the present invention, in the case where a film-forming insulating film is sputtered, conduction between the discharge space and the substrate holder facing the discharge space can be ensured, so that the bias effect on the substrate holder can be prevented from being lost. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a schematic view showing a schematic configuration of a sputtering film forming apparatus according to an embodiment of the present invention. The sputter deposition apparatus of the present embodiment includes a hermetic seal U, a substrate holder 14 for holding the substrate 5, a support liner 12 as a dry material holder for holding the dry material 13, and the like. The gas inlet port 16 and the exhaust gas π # 147070.doc 201043714 are formed in the wall portion of the airtight container 11 , and the gas supply port of the gas supply pipe, the gas supply source, and the like is connected to the exhaust port 17 . Vacuum exhaust system of tube m, etc. By controlling the amount of gas introduced and the amount of exhaust gas, the gas-tight volume (4) can be treated to be at a desired pressure according to the desired gas. A support plate (four) plate 12 is provided on the upper portion of the gas mi 11, and the support plate is opposed to the base plate 14 at the bottom of the airtight container u. The space between the support lining 12 and the substrate holder 14 in the processing chamber inside the sealed container k functions as a discharge space 10 for 0. The support liner 12 and the substrate holder 14 both contain a metal material (also including an alloy) and are electrically conductive. The support sill 12 is connected to the power source 21, and the substrate holder 14 is connected to the power source 22. In the present embodiment, for example, a reactive gas is introduced into the discharge space, and a reactive material of the reactive gas and a constituent element of the target 13 is formed as an insulating film to form a reactive sputtering on the substrate 5. Specifically, the target 13 contains cerium (Si), and a mixed gas of argon (Ar) gas and oxygen (〇2) gas is introduced into the discharge space 10 to form a tantalum oxide film (SiO 2 film) on the substrate 5. Further, in the present embodiment, a negative voltage is applied to the target 13 side, and a positive voltage is applied to the substrate 5 side to discharge in the discharge space 1 。. By this discharge, the gas introduced into the discharge space 10 is plasma-formed, whereby the positive ions generated are accelerated toward the dry material 13 and collide with the dry material 13. Thereby, the particles constituting the dry material 13 are splashed (knocked out) from the target 13, and the ruthenium particles react with oxygen and adhere to the substrate 5 by the ruthenium oxide film. Here, as a comparative example, when a voltage is applied to the target (the substrate side is grounded), if the voltage applied to the dry material is increased, the film formation rate can be increased by 147070.doc 201043714. However, if the applied voltage to the target is increased, especially in the case of a brittle target, cracks may occur. Further, in the case of a target having a low thermal conductivity, the exothermic heat is not sufficient (4), and there is a concern that the bonding layer between the supporting sheets is heated and peeled off. In the case of reactive sputtering in which the tantalum oxide film is formed as described above, when a sufficient amount of oxygen is introduced, the oxidation of the vicinity of the substrate can be promoted, and the tantalum oxide film having a desired composition ratio can be surely formed, but The oxidation of the surface of the target is also accelerated, so that the sputtering rate is reduced on the substrate. If the amount of oxygen introduced is reduced in order to suppress the oxidation of the surface of the target, there is a possibility that the oxygen in the formed tantalum oxide film is insufficient, and the tantalum oxide film having desired characteristics cannot be obtained. That is, it has previously been difficult to simultaneously achieve an increase in the film formation rate and oxidation promotion. On the other hand, in the present embodiment, a bias voltage is applied to the substrate 5 side, whereby the film formation rate can be improved and the oxidation can be promoted at the same time as described below. 2 is a view showing a biasing (horizontal axis) to a substrate side, a film formation rate (a vertical axis on the left side), and a formation in the case where a tantalum oxide film is formed on a substrate by the above reactive sputtering. The relationship between the refractive index of the tantalum oxide film (the vertical axis on the right side). Argon gas and oxygen were introduced into the discharge space so that the partial pressure ratio of oxygen was 8.68 %. In the plot, black off indicates the film formation rate and white circles indicate the refractive index. According to the result of Fig. 2, in the case where a positive bias is applied to the substrate side, the film formation rate is increased, and particularly, when the substrate bias is +50 V or more, the enthalpy rate is remarkably increased. Further, as the film formation rate was increased, it was observed that the refractive index of the tantalum oxide film formed by 147070.doc 201043714 also increased. This increase in refractive index is believed to be caused by insufficient oxygen in the membrane. Furthermore, in the above reactive sputtering, the film formation rate is greatly changed due to the degree of oxidation. Therefore, in order to eliminate the influence of oxidation, the gas introduced into the discharge space is only argon. Sputtering was performed to form a film, and the difference in film thickness depending on the substrate bias was measured. The target is 矽. The result is shown in Fig. 3. In FIG. 3, the horizontal axis indicates the position of the substrate in the direction in which the film is formed on the 0 side surface. [Positi〇n" The center position of the substrate (substantially coincident with the center position of the target material) is set to 〇, indicating the distance from the center position. The distance. The vertical axis of Fig. 3 indicates the film thickness of the film formed on the substrate. In the drawing of Fig. 3, the 'black circle indicates the result when the substrate bias is set to 0 V (ground), and the quadrilateral indicates the result when the substrate bias is set to +50 V. As is apparent from the results of Fig. 3, the film thickness, i.e., the film formation rate, was increased by an average of 36% by applying a bias voltage of +5 〇 v to the substrate side as compared with a case where the bias voltage was 0 V. From the result of Fig. 3 in which oxygen is not used, it is considered that the increase in the film formation rate is not based on the change in the amount of oxidation, but is based on the following phenomenon. That is, the inventors believe that by applying a positive bias to the substrate side, the plasma impedance in the discharge space is lowered and the high-density plasma is formed, whereby the rate of the charge is increased due to the decrease in the discharge voltage. It is considered that by applying a negative voltage to the material side and applying a positive voltage to the substrate side, the effective acceleration voltage for accelerating the positive ions toward the dry material in the discharge space is increased, thereby increasing the sputtering rate. Next, in the same manner as the above-described embodiment, a mixed gas of argon gas 147070.doc 201043714 and oxygen is introduced into the discharge space using a ruthenium target, reactive sputtering is performed on the tantalum oxide film, and the substrate bias is measured according to presence or absence of the substrate. Film formation rate and refractive index relative to oxygen partial pressure ratio. The result is shown in Fig. 4. In the drawing of Fig. 4, the horizontal axis represents the oxygen partial pressure ratio, the vertical axis on the left side represents the film formation rate, and the vertical axis on the right side represents the refractive index of the formed iridium oxide film. The film formation rate at the time of pressing is indicated by black. The pattern represented by a black triangle 鸪 = the film formation rate when the bias voltage is set to +50 V. The graph indicated by a white circle is the refractive index when there is no substrate bias. The pattern d indicated by a white triangle is the refractive index when the substrate bias is set to +50 V. According to the result of Fig. 4, it is possible to increase the film formation rate by applying a bias voltage to the substrate in a region where the oxygen knife pressure ratio is relatively low. Further, in the region where the oxygen partial pressure ratio is U to 12%, the bias is applied to the substrate, and the refractive index is further lowered as compared with the case where the substrate is not biased. When the substrate bias voltage is +50 V, the refractive index is lowered because the oxidation in the vicinity of the substrate is promoted as compared with the oxygen in the iridium oxide film at the time of no substrate bias. From this, it can be seen that the oxygen reduction caused by the plasma impedance reduction (high plasma density) is increased by applying a bias voltage to the substrate side, and the negative ions (〇-) generated by the plasma formation are positively biased. Pressing ^ clearly! And 5 丨, and gathered near the substrate to promote oxidation here. #Ι^η.θ By 〇 being attracted to the substrate side, the target: 0 can be relatively reduced in summer, thereby suppressing the oxidation of the surface of the metal, and suppressing the low-mine rate due to oxidation of the surface of the target That is, the film formation rate is decreased. FIG. 5 shows the film formation speed and the refractive index of the result of FIG. 4, and each oxygen partial pressure 147070.doc 201043714 is indicated by a black circle without a substrate bias.
1.5倍。 比表不之標繪圖。以黑圓圈 四邊形表示基板偏壓為+50 〇 如以上説明，根據本實施形態，藉由對基板側施加正偏 壓，可謀求同時實現成膜速率之提高、與氧化促進。 在上述之濺鍍成膜中，矽氧化膜亦附著於基板以外之部 份。例如，在基板座14上，於於載置有基板5之部份更靠 外周侧之表面上亦附著膜。且，由於矽氧化膜為絕緣膜， 故若在基板座14上將相對於放電空間10露出之面以作為絕 緣膜之矽氧化膜覆蓋’則面臨放電空間丨〇之導電面將成為 絕緣面’從而有可能喪失對如上述之基板座丨4之偏壓效 〇 果。 因此，在本實施形態中，於基板座14上設置不易附著膜 之部份，以確保濺鍍成膜中相對於放電空間10開放之導電 面。 於圖6顯示該結構之一具體例。 在該基板座14中，於面向放電空間10側形成有微小之間 隙15。間隙15係朝放電空間10開口，形成例如孔狀、狹縫 狀。間隙15係遍及基板座14之面向放電空間1〇之面之全面 而以複數形成。 147070.doc 201043714 在基板座14中，形成有間隙15之部份之徑向尺寸係大於 基板5之徑向尺寸，即使將基板5載置於基板座14 ,全部之 間隙15仍不會被基板5堵塞。即，任一者之間隙15 (存在於 較基板5為外周側之間隙15)均為相對於放電空間ι〇内度呈 開放之狀態。 適當地設定該間隙15之開口徑或寬度，藉此可使應成為 絕緣膜30且漂移於放電空間1〇之粒子不易進入間隙15之内 部，從而可在濺鍍成膜中避免絕緣膜3〇附著於間隙15之内 壁面。 基板座14例如由金屬材料所構成且具有導電性，間隙15 之内壁面為導電面。因此，若對基板座14施加偏壓，則間 隙1 5之内壁面亦成為期望之偏壓電位。該間隙〗5之内壁面 不被絕緣膜3 0覆蓋此點可確保相對於放電空間1 〇開放之導 電面。即，可在基板座4中，於面向放電空間10之側確保 與放電空間ίο之導通部份，從而可確實獲得對基板座14所 施加之偏壓所引起之上述效果。 間隙1 5之直控或寬度若過大’則會容許絕緣物粒子進 入且亦會於間隙1 5内附著堆積絕緣膜3 〇，而無法確保導 電面反之，若間隙15之直徑或寬度過小，則會因絕緣膜 3〇而閉塞開口，導致間隙15内部之導電面成爲相對於放電 空間10被遮斷之狀態。如以下説明，本發明人研究可確保 成膜中間隙15内部之導電面的間隙15之適宜的間隙尺寸。 例如，當放電空間1 〇内之壓力為5 Pa時，推斷上述絕緣 物粒子之平均自由行程為大約1 mm。此處之平均自由行程 147070.doc -10- 201043714 1 mm係表示若上述絕緣物粒子前進丨麵，則有Μ %之機 率衝撞其他分子等。若進入至間隙15内之絕緣物叔子。與分 子等衝撞，則被認爲有可能向所有方向彈飛開，但幾乎不 . 朝行進方向（在圖6中正下方）彈開。發明人等認為，若間隙 • 15内彈至正下方以外之粒子，在間㈣之直徑或寬度為平 均自由行程（上述例中為！ m m)以下，且間隙15之深^或縱 深尺寸為平均自由行程的3倍以上（在上述例中為〕㈣ 〇 _，會在到達至間隙15之孔底15a之前，附著於間隙。之 側壁，而不會附著於孔底丨5a。 又，進入至間隙15内之粒子有3〇%之機率即使前進1賴 仍不會與其他分子等衝撞。因此，考慮直接進入間隙15内 且向孔底15a前進之粒子之情形，若將間隙15之深度設 為1 mm以下，則粒子會有3〇 %之機率不與分子等衝撞， 而到達孔底15a。因此，根據本發明者研究之結果獲知， 若將間隙15之深度或縱深尺寸設為平均自由行程的3倍以 〇 上’則進入至間隙15内之粒子不與分子等發生衝撞而到達 孔底15a之概率大約為〇〇1 %，從而得出幾乎不會到達孔 底15a之結論。 如上所説明，若間隙1 5之直徑或寬度為平均自由行程以 下，且間隙15之深度或縱深尺寸為平均自由行程的3倍以 上，則即使上述絕緣物粒子進入至間隙丨5内，亦幾乎所有 粒子會在到達孔底15a之前附著於間隙15之側壁，因此可 以說不用絕緣物覆蓋孔底i 5a便可確保導電面。 在上述之例中，係將放電空間10内壓力設為5 Pa，然而 147070.doc 201043714 由於一般情形下平均自由行程係依存於氣體壓力，故若例 如氣體壓力為1 Pa之情形下，相對於5 ?&之情形平均自由 行程簡單地成為5倍，且令間隙15之直徑或寬度為5 mm以 下，令間隙15之深度為直徑或寬度的3倍以上即15 mm以上 時，則可確實地防止絕緣物附著於孔底15a，從而確保導 電面。 圖6例示將孔或狹縫狀之間隙15形成於基板座14之結 構，然而只要是在濺鍍成膜中亦不會由絕緣膜覆蓋，而可 於基板座14確保連通於放電空間1〇之導電面的結構即可， 並不限定於圖ό所示之形態。例如，間隙不限於筆直延伸 於基板座14之厚度方向之形狀，亦可在中途彎向橫方向、 或傾斜延伸。 又’圖7係顯示基板座之另一具體例。 在該基板座41上，亦於面向放電空間1〇之側形成有向放 電空間10開口之微小的間隙42。 再者’該基板座41之内部形成有於放電空間⑽相反側 與間隙42連通之氣體導人室43。氣體導人室43係通過形成 於基板座41之基板保持面之相反側的氣體導人路44，而連 接於處理室之外部之氣體供給系統。 因此，可通過氣體導入路44，於某 峪 於基板座4丨内之氣體導入 室43内導人反應性氣體（在上述之例中為氧氣），且將導入 於該氣體導入室43之氧氣通過間隙芯吹出至放電空間⑺。 採用如此之構成，可有效地將氧氣供給至基板5附近。 即，藉由相對降㈣材側之氧滚度而抑難材表面 147070.doc •12- 201043714 化’可抑制濺鍍速率之降低，且促進基板5附近之氧化， 從而防止形成於基板5之矽氧化膜變得氧不足。 又，藉由將氧氣從間隙42吹出，可抑制成為膜之粒子附 • 著堆積於基板座41表面，或進入間隙42内，從而可易於確 • 保面臨放電空間之導電面。其結果，亦不會損壞對基板 側之偏壓效果。 再者，基板座41具備用於將基板5安定保持於基板座41 〇 上之保持機構（未圖示）。作為保持機構，例如可舉出有機 械地將基板5推壓於基板座41之機構、或靜電夾盤等。利 用該保持機構，即使基板5受到從間隙42吹出之氣體壓 力’亦可使基板5安定地保持於基板座41。 以上，已參照具體例說明本發明之實施形態。然而，本 發明並非限定於此，可基於本發明之技術思想進行各種變 形。 作為成膜對象之基板，可舉出有半導體晶圓、碟狀記錄 〇 媒體、顯示面板、太陽電池面板、反射鏡等。又，作為形 成於基板之絕緣膜，不限於氧化矽，亦可為氮化矽、氧化 鈦、氮化鈦、氧化鋁、氮化鋁、氧化鈮等。靶材種類、或 ‘入放電空間之氣體種亦可根據欲成膜於基板之膜種而適 當選擇。 【圖式簡單說明】 圖1係顯示本發明之實施形態之濺鍍成膜裝置之概略構 成的模式圖； 圖2係顯示在利用反應性濺鍍而於基板上進行矽氧化膜 147070.doc 201043714 形成之情形下，對基板侧之偏壓、成膜速率、及所形成之 石夕氧化膜之折射率之關係的標繪圖； 圖3係顯示在令導入至放電空間之氣體僅為氬氣之條件 下進行濺鍍成膜，並測定根據基板偏壓有無之膜厚差異之 結果的標繪圖； 圖4係顯示使用矽靶材將氬氣與氧氣之混合氣體導入至 放電空間而進行矽氧化膜之反應性濺鍍，並測定根據基板 偏壓有無之相對氧分壓比之成膜速率與折射率的結果的標 繪圖； 圖5係將圖4結果之成膜速度與折射率，就各氧分壓比分 別表示之標繪圖； 圖6係圖1所示之基板座之模式放大圖；及 圖7係顯示本實施形態之濺鍍成膜裝置之基板座之另一 具體例的模式圖。 【主要元件符號說明】 5 基板 10 放電空間 12 支持襯板 13 無材 14 基板座 15 間隙 21、22 電源 30 絕緣膜 147070.doc 141.5 times. Drawing than the standard. In the black circle, the quadrilateral indicates that the substrate bias voltage is +50. As described above, according to the present embodiment, by applying a positive bias voltage to the substrate side, it is possible to simultaneously achieve an increase in the deposition rate and oxidation promotion. In the above-described sputtering film formation, the tantalum oxide film is also attached to a portion other than the substrate. For example, on the substrate holder 14, a film is also adhered to the surface on the outer peripheral side of the portion on which the substrate 5 is placed. Further, since the tantalum oxide film is an insulating film, if the surface exposed to the discharge space 10 is covered with a tantalum oxide film as an insulating film on the substrate holder 14, the conductive surface facing the discharge space will become an insulating surface. Thereby, it is possible to lose the bias effect on the substrate holder 4 as described above. Therefore, in the present embodiment, a portion where the film is less likely to adhere is provided on the substrate holder 14 to secure a conductive surface which is open to the discharge space 10 during sputtering. A specific example of this structure is shown in FIG. In the substrate holder 14, a minute gap 15 is formed on the side facing the discharge space 10. The gap 15 is opened toward the discharge space 10, and is formed, for example, in a hole shape or a slit shape. The gap 15 is formed over the entire surface of the substrate holder 14 facing the discharge space 1 而. 147070.doc 201043714 In the substrate holder 14, the radial dimension of the portion where the gap 15 is formed is larger than the radial dimension of the substrate 5, and even if the substrate 5 is placed on the substrate holder 14, all the gaps 15 are not rejected by the substrate. 5 blocked. In other words, the gap 15 (the gap 15 existing on the outer peripheral side of the substrate 5) is open to the inside of the discharge space. By appropriately setting the opening diameter or width of the gap 15, the particles which should become the insulating film 30 and drift in the discharge space 1 不易 do not easily enter the inside of the gap 15, so that the insulating film 3 can be prevented in the sputtering film formation. Adhered to the inner wall surface of the gap 15. The substrate holder 14 is made of, for example, a metal material and has electrical conductivity, and the inner wall surface of the gap 15 is a conductive surface. Therefore, when a bias voltage is applied to the substrate holder 14, the inner wall surface of the gap 15 also becomes a desired bias potential. The inner wall surface of the gap 55 is not covered by the insulating film 30, and the conductive surface which is open to the discharge space 1 可 is ensured. That is, in the substrate holder 4, the conduction portion with the discharge space can be secured on the side facing the discharge space 10, so that the above-described effects caused by the bias applied to the substrate holder 14 can be surely obtained. If the direct control of the gap 15 or the width is too large, the insulator particles are allowed to enter and the insulating film 3 附着 is deposited in the gap 15 , and the conductive surface cannot be ensured. If the diameter or width of the gap 15 is too small, The opening is closed by the insulating film 3, and the conductive surface inside the gap 15 is blocked from the discharge space 10. As explained below, the inventors studied a suitable gap size for ensuring the gap 15 of the conductive surface inside the gap 15 in the film formation. For example, when the pressure in the discharge space 1 为 is 5 Pa, it is inferred that the average free path of the above insulator particles is about 1 mm. The average free path here is 147070.doc -10- 201043714 1 mm means that if the above-mentioned insulator particles advance to the surface, there is a probability that Μ% collides with other molecules. If it enters the insulator uncle in the gap 15. If it collides with a molecule, it is considered that it is possible to fly in all directions, but it is almost no. It bounces in the direction of travel (directly below in Figure 6). The inventors believe that if the gap is 15 or less, the diameter or width of the gap (4) is equal to or less than the average free path (! mm in the above example), and the depth or depth dimension of the gap 15 is average. 3 times or more of the free stroke (in the above example, (4) 〇_, will adhere to the side wall of the gap 15 before reaching the bottom 15a of the gap 15, and will not adhere to the bottom hole 5a. The probability that the particles in the gap 15 have 3〇% does not collide with other molecules even if it advances by one. Therefore, considering the case of directly entering the gap 15 and advancing toward the bottom 15a, if the depth of the gap 15 is set When it is 1 mm or less, the probability that the particles will be 3% by weight does not collide with the molecules and reaches the bottom 15a. Therefore, according to the results of the study by the inventors, it is known that the depth or depth dimension of the gap 15 is set to mean freedom. The probability that the particles entering the gap 15 do not collide with the molecules and reach the bottom 15a of the hole 3 times of the stroke is about %1%, so that the conclusion that the hole bottom 15a is hardly reached is obtained. As stated, if gap 1 5 If the diameter or width is below the mean free path, and the depth or depth dimension of the gap 15 is more than three times the mean free path, even if the insulator particles enter the gap 丨5, almost all of the particles will reach the hole bottom 15a. Previously attached to the side wall of the gap 15, it can be said that the conductive surface can be ensured without covering the hole bottom i 5a with the insulator. In the above example, the pressure in the discharge space 10 is set to 5 Pa, however 147070.doc 201043714 In the case where the mean free path is dependent on the gas pressure, if, for example, the gas pressure is 1 Pa, the average free path is simply 5 times with respect to 5 ? & and the diameter or width of the gap 15 is 5 When the depth of the gap 15 is three times or more the diameter or the width, that is, 15 mm or more, it is possible to surely prevent the insulator from adhering to the hole bottom 15a, thereby securing the conductive surface. Fig. 6 illustrates a hole or a slit shape. The gap 15 is formed in the structure of the substrate holder 14. However, as long as it is not covered by the insulating film in the sputtering film formation, the substrate holder 14 can be ensured to communicate with the conductive surface of the discharge space. The configuration is not limited to the one shown in Fig. 1. For example, the gap is not limited to a shape extending straight in the thickness direction of the substrate holder 14, and may be bent in the lateral direction or obliquely in the middle. Another specific example of the substrate holder is shown in the substrate holder 41. A small gap 42 opening into the discharge space 10 is formed on the side facing the discharge space 1A. Further, the inside of the substrate holder 41 is formed in the substrate holder 41. a gas guiding chamber 43 communicating with the gap 42 on the opposite side of the discharge space (10). The gas guiding chamber 43 is connected to the outside of the processing chamber through a gas guiding path 44 formed on the opposite side of the substrate holding surface of the substrate holder 41. Gas supply system. Therefore, the gas introduction channel 44 can be used to introduce a reactive gas (oxygen in the above-described example) into the gas introduction chamber 43 in the substrate holder 4, and the oxygen introduced into the gas introduction chamber 43 can be introduced. The gap core is blown out to the discharge space (7). With such a configuration, oxygen can be efficiently supplied to the vicinity of the substrate 5. That is, by reducing the oxygen rolling degree on the side of the (four) material, the surface of the refractory material 147070.doc • 12-201043714 can suppress the decrease in the sputtering rate and promote oxidation in the vicinity of the substrate 5, thereby preventing formation on the substrate 5. The ruthenium oxide film becomes insufficient in oxygen. Further, by blowing oxygen gas out of the gap 42, it is possible to prevent the particles of the film from being deposited on the surface of the substrate holder 41 or entering the gap 42, so that the conductive surface facing the discharge space can be easily ensured. As a result, the bias effect on the substrate side is not damaged. Further, the substrate holder 41 is provided with a holding mechanism (not shown) for holding and holding the substrate 5 on the substrate holder 41. As the holding means, for example, a mechanism for mechanically pressing the substrate 5 against the substrate holder 41, or an electrostatic chuck or the like can be cited. With this holding mechanism, even if the substrate 5 receives the gas pressure 'ejected from the gap 42, the substrate 5 can be stably held by the substrate holder 41. Hereinabove, the embodiments of the present invention have been described with reference to specific examples. However, the present invention is not limited thereto, and various modifications can be made based on the technical idea of the present invention. Examples of the substrate to be coated include a semiconductor wafer, a disk-shaped recording medium, a display panel, a solar cell panel, and a mirror. Further, the insulating film formed on the substrate is not limited to ruthenium oxide, and may be tantalum nitride, titanium oxide, titanium nitride, aluminum oxide, aluminum nitride, or ruthenium oxide. The type of the target or the type of gas entering the discharge space can be appropriately selected depending on the type of film to be formed on the substrate. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a schematic configuration of a sputtering film forming apparatus according to an embodiment of the present invention; and Fig. 2 is a view showing a tantalum oxide film on a substrate by reactive sputtering. 147070.doc 201043714 In the case of formation, the relationship between the bias on the substrate side, the film formation rate, and the refractive index of the formed iridium oxide film; FIG. 3 shows that the gas introduced into the discharge space is only argon gas. Under the conditions, sputtering is performed to form a film, and a measurement result based on the difference in film thickness of the substrate bias is measured. FIG. 4 shows that a mixed gas of argon gas and oxygen gas is introduced into the discharge space using a ruthenium target to carry out a ruthenium oxide film. Reactive sputtering, and the measurement of the film formation rate and refractive index according to the relative oxygen partial pressure ratio of the substrate bias; FIG. 5 is the film formation speed and refractive index of FIG. Fig. 6 is a schematic enlarged view of the substrate holder shown in Fig. 1; and Fig. 7 is a schematic view showing another specific example of the substrate holder of the sputtering film forming apparatus of the embodiment. [Main component symbol description] 5 Substrate 10 Discharge space 12 Support lining 13 No material 14 Substrate holder 15 Clearance 21, 22 Power supply 30 Insulation film 147070.doc 14