WO2010101023A1 - Mécanisme de déplacement parallèle et procédé de fabrication d'un mécanisme de déplacement parallèle - Google Patents

Mécanisme de déplacement parallèle et procédé de fabrication d'un mécanisme de déplacement parallèle Download PDF

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Publication number
WO2010101023A1
WO2010101023A1 PCT/JP2010/052423 JP2010052423W WO2010101023A1 WO 2010101023 A1 WO2010101023 A1 WO 2010101023A1 JP 2010052423 W JP2010052423 W JP 2010052423W WO 2010101023 A1 WO2010101023 A1 WO 2010101023A1
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Prior art keywords
layer
moving
oxide film
intermediate layer
support
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PCT/JP2010/052423
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English (en)
Japanese (ja)
Inventor
松田　伸也
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コニカミノルタホールディングス株式会社
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Priority to JP2011502707A priority Critical patent/JP5354006B2/ja
Publication of WO2010101023A1 publication Critical patent/WO2010101023A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
    • B81B3/0051—For defining the movement, i.e. structures that guide or limit the movement of an element
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • G02B7/04—Mountings, adjusting means, or light-tight connections, for optical elements for lenses with mechanism for focusing or varying magnification
    • G02B7/08—Mountings, adjusting means, or light-tight connections, for optical elements for lenses with mechanism for focusing or varying magnification adapted to co-operate with a remote control mechanism
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers

Definitions

  • the present invention relates to a translation mechanism and a method for manufacturing the translation mechanism, and more particularly to a translation mechanism formed by MEMS technology and a method for manufacturing the translation mechanism.
  • a parallel movement mechanism using a parallel link mechanism has been used as a vehicle suspension or stage movement mechanism.
  • two members having rotation fulcrums at both ends are arranged in parallel, so that a member held between the fulcrums can be translated.
  • MEMS Micro Electro Mechanical Systems
  • the shape can be transferred and etched using a photolithographic technique on a large-area silicon wafer, and fine shapes can be collectively formed with high accuracy, thereby realizing downsizing and cost reduction.
  • Patent Document 1 discloses a mechanism in which a two-layer link mechanism extending in the surface direction is provided and moved in the surface direction.
  • Patent Document 2 discloses a mechanism that is provided with a two-layer link mechanism extending in the thickness direction and moves in the surface direction.
  • Patent Document 3 discloses a mechanism in which a single link mechanism extending in the surface direction is provided and moved in a direction perpendicular to the surface.
  • JP 2000-314842 A JP 2005-262357 A JP 2000-339725 A
  • the present invention has been made in view of the above circumstances, and is capable of suppressing tilting and positional deviation of optical components, enabling a small amount of highly accurate parallel movement, and obtaining a large displacement with a small driving force. It is an object of the present invention to provide a mechanism and a method for manufacturing a translation mechanism.
  • the object of the present invention can be achieved by the following configuration.
  • a moving part formed by laminating a first layer on at least part of the upper surface of the intermediate layer and laminating a second layer on at least part of the lower surface of the intermediate layer;
  • the first layer is stacked on at least part of the upper surface of the intermediate layer
  • the second layer is stacked on at least part of the lower surface of the intermediate layer, facing at least the moving part.
  • a support provided at a position; A first beam formed of the first layer connecting the first layer of the moving part and the first layer of the support part facing the first layer of the moving part; , A second beam formed of the second layer connecting the second layer of the moving unit and the second layer of the support unit facing the second layer of the moving unit;
  • a translation mechanism characterized in that the translation part is capable of translation in the stacking direction of the first layer, the intermediate layer, and the second layer.
  • the support part is provided at a position sandwiching at least the moving part
  • the first beam is provided with at least two, and connects the first layer of the moving unit and the first layer of the support unit facing the first layer of the moving unit
  • At least two of the second beams are provided, and connect the second layer of the moving unit and the second layer of the support unit facing the second layer of the moving unit.
  • the moving part has an opening penetrating in the stacking direction of each layer forming the moving part, 5.
  • the parallel movement mechanism according to any one of 1 to 4, wherein a lens is inserted into the opening with an optical axis directed in the stacking direction.
  • a driving layer for translating the moving unit in a stacking direction of the first layer, the intermediate layer, and the second layer is provided on one plane of the moving unit. 7.
  • the parallel movement mechanism according to any one of 1 to 6.
  • a resist agent is applied on the first layer, and is configured by a photolithography method, which includes a portion that becomes a moving portion, a portion that becomes a supporting portion, and the first layer, and the moving portion and the supporting portion, A first photolithography step of forming a mask pattern in a portion to be a first beam connecting the two; A first etching step of removing portions of the first layer, the first oxide film, and the intermediate layer other than the moving portion, the support portion, and the first beam by etching; A first resist agent removing step of removing the resist agent remaining on the first layer;
  • the moving portion formed by laminating the first layer on the upper surface of the intermediate layer and the second layer on the lower surface is formed on the supporting portion similarly formed by the first layer. Connected by the formed first beam and the second beam formed by the second layer so that the moving part can move in parallel in the stacking direction of the first layer, the intermediate layer and the second layer.
  • FIG. 1 shows a configuration of the first embodiment of the translation mechanism according to the present invention.
  • 1A is a plan view
  • FIG. 1B is a cross-sectional view along AA ′ in FIG. 1A
  • FIG. 1C is a cross-sectional view along BB ′ in FIG. 1A.
  • 2A and 2B are schematic views showing the operation of the first embodiment of the translation mechanism according to the present invention.
  • FIG. 2A shows a state before the operation
  • FIG. 2B shows a state after the operation.
  • the parallel movement mechanism 1 includes a moving part 11, a support part 13, two first beams 15 and four second beams 17 and the like.
  • the support unit 13 is arranged so as to surround the moving unit 11, and the moving unit 11 and the support unit 13 are provided on each of two opposite sides of the moving unit 11 in the y direction as illustrated. 1B, and as shown in FIG. 1B, four second beams provided on both sides in the x direction of the first beam 15 on the back surface side of the figure. 17 are connected.
  • the moving unit 11 and the support unit 13 are configured by laminating three parallel plate-shaped layers of a first layer 101, an intermediate layer 301, and a second layer 201.
  • the first layer 101, the intermediate layer 301, and the second layer 201 are, for example, silicon (Si), and the interface of the intermediate layer 301 with the first layer 101 and the second layer 201 is the first oxide film.
  • a (SiO 2 ) 303 and a second oxide film (SiO 2 ) 305 are formed.
  • the first layer 101 and the second layer 201 are equal in thickness.
  • the first beam 15 is composed only of the first layer 101
  • the second beam 17 is composed only of the second layer 201. Therefore, the moving unit 11 and the support unit 13 are connected to each other by the first beam 15 configured by the first layer 101 on the upper surface side and the second beam 17 configured by the second layer 201 on the lower surface side. Will be linked.
  • the first beam 15 and the second beam 17 are equal in length and thickness, and the width of the first beam 15 is twice that of the second beam 17.
  • the two second beams 17 are configured to have the same bending rigidity.
  • the first beam 15 and the second beam 17 have an axisymmetric shape in the x direction and the y direction, and the entire parallel movement mechanism 1 has the same rigidity against deformation in the z direction.
  • the support portion 13 is arranged so as to surround the moving portion 11, but this is not essential, and at least the moving portion 11 is composed of the first beam 15 and the second beam 17. If there is a part connected with.
  • FIG. 2 is a cross-sectional view taken along the line B-B ′ of FIG. 1C, and the first beam 15 is indicated by a broken line for convenience.
  • a driving force F in the z direction is applied from the outside to the moving unit 11 in the state of FIG. 2A, the first beam 15 and the second beam 17 are shown in FIG. 2B. Is deformed into an S shape.
  • the parallel movement mechanism 1 As described above, since the parallel movement mechanism 1 as a whole has the same rigidity against deformation in the z direction, it is pushed by the driving force F in the z direction, and the moving unit 11 is translated in the z direction. Even if an unintended force such as gravity or inertia force is applied from the outside, the parallelism of the moving unit 11 is maintained.
  • the driving force F an electromagnetic force, which will be described later with reference to FIG. 6 or later, a force due to electromechanical conversion by a piezoelectric element, a shape memory alloy, or the like can be used.
  • FIG. 3 is a process diagram illustrating the manufacturing method of the first embodiment
  • FIGS. 4 and 5 are cross-sectional views taken along the line A-A ′ of FIG.
  • FIG. 1 A first figure 3 will be described below with reference to FIGS. 4 and 5.
  • FIG. 1 A first figure 3 will be described below with reference to FIGS. 4 and 5.
  • Step S01 oxide film forming process
  • the first oxide film (SiO 2 ) 303 is formed on one surface of the intermediate layer 301 by high-temperature treatment of the intermediate layer 301 made of parallel flat plates of thick silicon (Si).
  • a second oxide film (SiO 2 ) 305 is formed on the other surface.
  • the thickness of the intermediate layer 301 is generally about 300 to 500 ⁇ m although it depends on specifications such as flatness and mass required for the translation mechanism 1.
  • the thicknesses of the first oxide film 303 and the second oxide film 305 are determined by an etching process described later, but are generally 1 ⁇ m or less.
  • Step S03 jointing process
  • a silicon (Si) thin plate 101 is bonded onto the first oxide film 303
  • a silicon (Si) thin plate 201 is bonded onto the second oxide film 305.
  • Bonding can be performed by room-temperature bonding in which the surfaces are cleaned and activated by plasma or the like, and anodic bonding using an electric field.
  • Step S05 polishing process
  • the thin plate 101 and the thin plate 201 joined in step S03 are polished thinly.
  • the thicknesses of the polished thin plate 101 and thin plate 201 are determined by the rigidity required for the first beam 15 and the second beam 17, but are generally about several ⁇ m.
  • the first layer 101 and the second layer 201 are formed from the thin plate 101 and the thin plate 201.
  • the above method is the same as the process of creating a substrate called an SOI (Silicon On Insulator) substrate, and is generally used. Since a plurality of other processes for creating an SOI substrate have been proposed, they may be used.
  • SOI Silicon On Insulator
  • Step S11 first photolithography process
  • a resist agent is applied on the first layer 101, and a mask pattern is formed on a portion to be left in the next first etching process by performing a photolithography process such as exposure and development. 401 is formed.
  • Step S13 first etching process
  • the first layer 101, the first oxide film 303, the intermediate layer 301, and the second oxide film 305 other than the portion where the mask pattern 401 is formed are removed by etching. Only the second layer 201 is left. Since the reaction material and the rate of etching differ greatly between silicon and oxide, the etching depth can be controlled by controlling the time. Alternatively, the first layer 101, the first oxide film 303, and the intermediate layer 301 may be removed, and the second oxide film 305 and the second layer 201 may be left.
  • Step S15 first resist agent removing step
  • the resist agent (mask pattern) 401 remaining on the first layer 101 is removed.
  • Step S21 (second photolithography process) As shown in FIG. 5B, a resist agent is applied on the second layer 201 and subjected to a photolithography process such as exposure and development, so that a mask pattern is formed on a portion to be left in the next second etching process. 403 is formed.
  • a photolithography process such as exposure and development
  • Step S23 second etching process
  • the second layer 201, the second oxide film 305, the intermediate layer 301, and the first oxide film 303 other than the portion where the mask pattern 403 is formed are removed by etching. , Leaving only the first layer 101.
  • the second layer 201, the second oxide film 305, and the intermediate layer 301 may be removed to leave the first oxide film 303 and the first layer 101.
  • the etching depth is controlled by controlling the etching time.
  • Step S25 second resist agent removing step
  • the resist agent (mask pattern) 403 remaining on the second layer 201 is removed.
  • the first beam 15 formed only by the first layer 101 and the second beam 17 formed only by the second layer 201 remain, and are the same parallel as shown in FIG. A moving mechanism 1 is formed.
  • the moving portion formed by laminating the first layer on the upper surface of the intermediate layer and laminating the second layer on the lower surface is similarly formed.
  • the moving portion is connected to the support portion by the first beam formed by the first layer and the second beam formed by the second layer, and the moving portion has the first layer, the intermediate layer, and the second layer.
  • FIG. 6 is a schematic diagram showing a first application example of the first embodiment.
  • FIG. 6A is a plan view seen from the back side of FIG. 1A
  • FIG. 6B is FIG. It is CC 'sectional drawing of (a).
  • a hole penetrating from the first layer 101 to the second layer 201 is provided in the center of the moving unit 11 in FIG. 1 (a).
  • the lens 21 is inserted with the optical axis 21a directed in the z direction.
  • the loop-shaped wiring 31 is provided on the second layer 201 of the moving unit 11, and the permanent magnet 33 is provided at a position facing the wiring 31.
  • the support portion 13 and the permanent magnet 33 are fixed to a fixing portion 35 that is a part of the camera body, for example, by adhesion.
  • the driving force F can be generated by the action of the current I flowing through the wiring 31 and the magnetic field generated by the permanent magnet 33.
  • the driving force F that moves the lens 21 in the negative z direction can be generated by the current I flowing counterclockwise in FIG. If the direction of the current I is reversed, it is possible to generate a driving force F that moves the lens 21 in the positive z direction. Since the moving unit 11 translates in the z direction by the translation mechanism 1, the lens 21 also translates in the z direction, that is, the optical axis 21a direction.
  • the parallel movement mechanism according to the first embodiment can be applied to the focus adjustment and zoom mechanism of the camera lens.
  • FIG. 7 is a schematic diagram showing a second application example of the first embodiment.
  • FIG. 7A is a plan view seen from the same side as FIG. 1A
  • FIG. 7C is a sectional view taken along the line DD ′ of FIG.
  • a driving element 51 made of a piezoelectric element 501 such as PZT (lead zirconate titanate) sandwiched between two layers of electrodes 503 is disposed on the first layer 101 of the two first beams 15.
  • the film is formed by sputtering. This is a so-called unimorph structure. Details of the manufacturing method will be described later with reference to FIG.
  • the piezoelectric element 501 when an electric field is applied between the two layers of electrodes 503 of the drive element 51, as shown in FIG. 7C, the piezoelectric element 501 has, for example, an electric field direction, that is, a diagram. Expands in the z direction and contracts in the y direction in the figure. Since the driving element 51 and the first layer 101 of the first beam 15 are in close contact with each other, the piezoelectric element 501 contracts in the y direction, so that the first beam 15 bends in the z direction as in the case of bimetal. The moving unit 11 translates in the positive direction of the z direction with respect to the support unit 13.
  • FIG. 8 is a process diagram showing a manufacturing method of a second application example of the first embodiment
  • FIG. 9 is a process diagram showing a subroutine of FIG. 8
  • FIG. 10 is a process diagram of FIG. FIG. 8 is a sectional view taken along the line DD ′ of FIG. 7 showing a process.
  • step S05 polishing process
  • step S11 first photolithography process
  • step S07 driving element forming subroutine
  • step S09 mirror forming subroutine
  • step S31 driving element layer forming step
  • an electrode 503, a piezoelectric element 501, and another layer of electrode 503 are formed on the first layer 101.
  • the drive element layer 51 is formed by film formation in this order by a method such as sputtering.
  • step S33 third photolithography process
  • a resist agent is applied on the drive element layer 51, and a photolithography process such as exposure and development is performed.
  • a mask pattern 407 is left in a portion where the film is to be formed.
  • step S35 third etching step
  • the electrode 503, the piezoelectric element 501, and the other layer of the electrode 503 other than the portion where the mask pattern 407 is formed are removed by etching. .
  • step S37 third resist agent removing step
  • the resist agent (mask pattern) 407 remaining on the drive element 51 is removed.
  • step S39 the direction of polarization P of the piezoelectric element 501 of the drive element 51 is aligned as shown in FIG. 10E by applying a high voltage between the two layers of electrodes 503. Apply polarization treatment. As a result, the piezoelectric element 501 functions as a drive element.
  • the polarization process may be performed after step S25 (second resist agent removing step) in FIG.
  • step S39 polarization step
  • step S39 polarization step
  • step S09 mirror formation subroutine
  • the mirror 23 is formed by a method such as vapor deposition. Details are shown in FIG.
  • step S41 (fourth photolithography process) a resist agent is applied on the first layer 101 and the driving element 51, and a photolithography process such as exposure and development is performed, whereby a mirror is obtained.
  • a mask pattern having an opening is formed in a portion where the portion 23 is to be formed.
  • step S43 mirror vapor deposition step
  • silver (Ag) or aluminum (Al) is vapor-deposited on the mask pattern formed in step S41.
  • step S45 fourth resist agent removing step
  • the remaining resist agent that is, the mask pattern is removed, and the mirror 23 is completed.
  • step S11 the mask pattern 401 formed on the portion of the first layer 101 that becomes the moving portion 11 in step S11 (first photolithography process) is formed on the mirror 23 described above.
  • step S11 first photolithography process
  • the driving element 51 that is a member that generates a driving force and the mirror 23 that is an optical functional member can be formed on the parallel movement mechanism 1.
  • FIG. 11A and 11B are schematic views showing a third application example of the first embodiment.
  • FIG. 11A is a plan view seen from the same side as FIG. 1A
  • FIG. 11A is a cross-sectional view taken along line AA ′
  • FIG. 11C is a cross-sectional view taken along line BB ′ of FIG.
  • the first beam 15 is also indicated by a broken line for convenience.
  • the parallel movement mechanism 1 includes a moving part 11, a support part 13, two first beams 15 and four second beams 17 as in FIG. 1A. Has been.
  • the support unit 13 is disposed so as to surround the moving unit 11. Similar to the second application example, a mirror 23 is formed on the moving unit 11 by vapor deposition or the like.
  • the two first beams 15 are provided so as to straddle a part of the upper surface of two portions of the moving unit 11 facing each other in the y direction and a part of the upper surface of the supporting unit 13 facing the first beam 15. And the support part 13 are connected.
  • the four second beams 17 are also provided on the back surface side of the drawing on both sides in the x direction of the first beam 15 and a part of the upper surface of the moving portion 11 and a support opposite thereto.
  • the moving part 11 and the support part 13 are connected to each other so as to straddle a part of the upper surface of the part 13.
  • loop-shaped wirings 53 of shape memory alloy are formed by a method such as sputtering.
  • the moving part 11 and the support part 13 are formed on a first oxide film (SiO 2 ) 303 and a second oxide film on both surfaces of an intermediate layer 301 made of, for example, silicon (Si). (SiO 2 ) 305 is formed.
  • the first beam 15 is composed of only the first layer 101, and is provided so as to straddle a part of the upper surface of the moving part 11 and a part of the upper surface of the support part 13 opposed thereto.
  • a loop-shaped wiring 53 of a shape memory alloy is formed on the first beam 15.
  • the second beam 17 is composed of only the second layer 201, and is provided so as to straddle a part of the lower surface of the moving part 11 and a part of the lower surface of the support part 13 opposed thereto.
  • the first layer 101 connects the moving unit 11 and the supporting unit 13 as the first beam 15, and the second layer 201 serves as the second beam 17 and the moving unit 11 and the supporting unit 13. Are linked.
  • a loop-shaped wiring 53 of a shape memory alloy as a driving element is formed on the first beam 15, a loop-shaped wiring 53 of a shape memory alloy as a driving element is formed.
  • the first beam 15 and the second beam 17 are equal in length and thickness, and the width of the first beam 15 is twice that of the second beam 17.
  • the two second beams 17 are configured to have the same bending rigidity.
  • the first beam 15 and the second beam 17 have an axisymmetric shape in the x direction and the y direction, and the entire parallel movement mechanism 1 has the same rigidity against deformation in the z direction.
  • the shape memory alloy loop-shaped wiring 53 is preliminarily stored with a characteristic that shrinks in the y direction at a high temperature.
  • the shape memory alloy loop-shaped wiring 53 When the shape memory alloy loop-shaped wiring 53 is energized, it generates heat due to Joule heat and the high temperature. And contract in the y direction. Accordingly, as in the second application example, the first beam 15 bends in the z direction, and the moving unit 11 translates in the positive direction in the z direction with respect to the support unit 13.
  • the manufacturing method of the third application example is almost the same as the manufacturing method of the second application example shown in FIGS.
  • the shape memory process for storing the shape in the loop-shaped wiring 53 of the shape memory alloy is not a process corresponding to step S39 (polarization process) in FIG. 9A, but is a step S25 (second resist agent) in FIG. It is necessary to provide after the removal step).
  • the driving element 51 that is a member that generates a driving force and the mirror 23 that is an optical functional member are connected to the parallel movement mechanism 1.
  • the parallel movement mechanism 1 can be reduced in size and cost.
  • FIG. 12A and 12B are schematic views showing the configuration of the second embodiment, in which FIG. 12A is a plan view, FIG. 12B is a cross-sectional view taken along line AA ′ in FIG. ) Is a cross-sectional view along the line DD ′ in FIG.
  • the parallel movement mechanism 1 includes a moving part 11, a supporting part 13, two first beams 15, a second beam 17, and the like.
  • the support unit 13 is arranged so as to surround the moving unit 11, and the moving unit 11 and the support unit 13 are provided on each of two opposite sides of the moving unit 11 in the y direction as illustrated.
  • the first beams 15 are connected to each other, and as shown in FIG. 12C, they are connected to the second beams 17 provided on the entire rear surface side of the drawing.
  • the moving part 11 and the support part 13 are configured by laminating three parallel flat plate layers of a first layer 101, an intermediate layer 301, and a resin film layer 203.
  • the first layer 101 and the intermediate layer 301 are, for example, silicon (Si), and the interface between the intermediate layer 301 and the first layer 101 is a first oxide film (SiO 2 ) 303.
  • the first beam 15 is composed only of the first layer 101
  • the second beam 17 is composed only of the resin film layer 203. Therefore, the moving part 11 and the support part 13 are connected by the first beam 15 constituted by the first layer 101 on the upper surface side and the second beam 17 constituted by the resin film layer 203 on the lower surface side. It will be connected.
  • the resin film layer 203 Since the resin film layer 203 has high elasticity, it can function as a beam without being subjected to shape processing. Not only the second beam 17 but also the first beam 15 can be configured as a resin film layer.
  • the interface between the intermediate layer 301 and the resin film layer 203 may be the second oxide film (SiO 2 ) 305 as in the first embodiment.
  • FIG. 13 is a process diagram showing the manufacturing method of the second embodiment
  • FIG. 14 is a sectional view taken along the line D-D ′ of FIG. 12A showing each process of FIG. 13.
  • step S01 oxide film forming process
  • step S15 first resist agent removing process
  • the first oxide film (SiO 2 ) 303 and the second oxide film (SiO 2 ) 305, the first layer 101, and the second layer are formed on both surfaces of the intermediate layer 301.
  • 201 was formed, and the parallel movement mechanism 1 was formed by performing etching from the first layer 101 side and the second layer 201 side.
  • step S41 resin film layer laminating step in FIG. 13, as shown in FIG. 14 (g), on the surface opposite to the first layer 101 of the intermediate layer 301 by a method such as adhesion, The resin film layer 203 is solidly pasted to form the second beam 17, and the translation mechanism 1 is completed.
  • the function as the second beam 17 can be achieved without performing shape processing.
  • the process for forming the second beam 17 can be simplified, and the manufacturing cost can be reduced. If the first beam 15 is also made of a resin film, the process can be further simplified and the manufacturing cost can be reduced.
  • a pair of moving portions 11 and a support portion 13 are a pair of first beams. 15 and the second beam 17.
  • the moving unit 11 and the support unit 13 are configured by laminating three parallel flat plate layers of a first layer 101, an intermediate layer 301, and a second layer 201.
  • the first layer 101, the intermediate layer 301, and the second layer 201 are, for example, silicon (Si), and the interface between the intermediate layer 301 and the first layer 101 is the same as that of the first oxide film (SiO 2 ) 303. It has become.
  • the first beam 15 is composed only of the first layer 101
  • the second beam 17 is composed only of the second layer 201.
  • the structure of the mechanism is simple, suitable for downsizing, and can be manufactured at low cost.
  • the displacement in the y direction occurs when the moving unit 11 moves in the z direction, for example, the driving of the lens 21 as in the first application example of the first embodiment shown in FIG. It cannot be used for those that do not allow displacement in the direction.
  • FIG. 16 is a schematic diagram showing a plan for improving the shape of the beam.
  • FIG. 16A shows the shape of the beam shown in each of the above-described embodiments and application examples
  • FIG. 16B shows the improved beam. An example of a shape is shown.
  • the first beam 15 or the second beam 17 that couples the moving unit 11 and the support unit 13 is not a beam having a uniform width as shown in FIG. As shown in FIG. 4, the cutout portions 19 are provided at both ends of the beam.
  • the rigidity at both ends of the beam can be lowered and easily deformed, the both ends can be easily deformed, and the center can be easily deformed.
  • a parallel movement mechanism close to a typical link mechanism can be realized.
  • the moving portion formed by laminating the first layer on the upper surface of the intermediate layer and laminating the second layer on the lower surface is used as the support portion similarly formed.
  • the moving part is connected to the first beam, the intermediate layer, and the second layer by connecting the first beam formed of the first layer and the second beam formed of the second layer.

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Abstract

L'invention concerne un mécanisme de déplacement parallèle. Une section de déplacement, formée en appliquant une première couche sur la surface supérieure d'une couche intermédiaire et en appliquant une seconde couche sur la surface inférieure de la couche intermédiaire, est raccordée à une section de support formée de la même manière, au moyen d'un premier faisceau formé de la première couche et d'un second faisceau formé de la seconde couche. La section de déplacement est configurée pour être déplacée en parallèle dans le sens d'application de la première couche, de la couche intermédiaire et de la seconde couche. Par conséquent, dans le mécanisme de déplacement parallèle, des inclinaisons et des changements de position d'un composant optique peuvent être supprimés, un déplacement parallèle fin et hautement précis peut être effectué, et un grand déplacement peut être obtenu avec une faible puissance de commande. L'invention concerne également un procédé de fabrication du mécanisme de déplacement parallèle.
PCT/JP2010/052423 2009-03-04 2010-02-18 Mécanisme de déplacement parallèle et procédé de fabrication d'un mécanisme de déplacement parallèle WO2010101023A1 (fr)

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JP2011502707A JP5354006B2 (ja) 2009-03-04 2010-02-18 平行移動機構および平行移動機構の製造方法

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JP2009050577 2009-03-04
JP2009-050577 2009-03-04

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WO2010101023A1 true WO2010101023A1 (fr) 2010-09-10

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