WO2010097857A1 - Matériau de réserve et procédé de formation d'un motif l'utilisant - Google Patents

Matériau de réserve et procédé de formation d'un motif l'utilisant Download PDF

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Publication number
WO2010097857A1
WO2010097857A1 PCT/JP2009/005351 JP2009005351W WO2010097857A1 WO 2010097857 A1 WO2010097857 A1 WO 2010097857A1 JP 2009005351 W JP2009005351 W JP 2009005351W WO 2010097857 A1 WO2010097857 A1 WO 2010097857A1
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WO
WIPO (PCT)
Prior art keywords
group
photoacid generator
polymer
adamantyl
pattern
Prior art date
Application number
PCT/JP2009/005351
Other languages
English (en)
Japanese (ja)
Inventor
遠藤政孝
笹子勝
Original Assignee
パナソニック株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by パナソニック株式会社 filed Critical パナソニック株式会社
Publication of WO2010097857A1 publication Critical patent/WO2010097857A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Definitions

  • polymers having low affinity for the photoacid generator include poly (1-adamantyl methacrylate), poly (1-adamantyl acrylate), poly (1-adamantyl- ⁇ -fluoroacrylate), polymethyl Methacrylate, polymethyl acrylate or polymethyl- ⁇ -fluoroacrylate can be used.
  • the addition amount of the molecule having a low affinity for the photoacid generator or the second polymer is preferably about 0.5 wt% or more and 20 wt% or less with respect to the first polymer.
  • the present invention is not limited to this range. If the addition amount of the second polymer is too small, the effect is small. Conversely, if the addition amount is excessive, the solubility of the exposed portion in the resist film is hindered and the performance of the resist may be deteriorated. For this reason, it is more preferably about 1 wt% or more and 10 wt% or less with respect to the first polymer.
  • the resist material contains a molecule or a second polymer having a smaller affinity for the photoacid generator than the first polymer containing an acid leaving group and a hydrophilic group. For this reason, since the acid generated in the exposed portion of the resist film immediately reacts with the acid leaving group of the first polymer located in the vicinity, it is possible to prevent the acid diffusion from increasing. Thereby, the roughness which arises in the unexposed part of a resist film can be reduced, As a result, the pattern which has a favorable shape can be obtained.
  • the resist material and the pattern forming method using the same according to the present invention it is possible to reduce the roughness generated in the resist pattern and obtain a fine pattern having a good shape.
  • a 2-methyladamantyl group was used as the acid leaving group contained in the main polymer.
  • a t-butyl group, a t-butyloxycarbonyl group, a 1-ethoxyethyl group, a methoxymethyl group was used.
  • 2-methylcyclopentyl group, 2-ethylcyclopentyl group, 2-ethyladamantyl group and the like can be used.
  • 2-ethylcyclopentyl group was used as the acid leaving group contained in the main polymer, but instead, t-butyl group, t-butyloxycarbonyl group, 1-ethoxyethyl group, methoxymethyl group 2-methylcyclopentyl group, 2-methyladamantyl group, 2-ethyladamantyl group and the like can be used.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention concerne un film de réserve (102) qui est formé sur un substrat (101), une exposition selon un motif étant réalisée en exposant sélectivement le film de réserve (102) avec une lumière d'exposition. Après cela, le film de réserve (102) exposé selon le motif est chauffé et le film de réserve chauffé (102) est développé, formant ainsi un motif de réserve (102a) à partir du film de réserve (102). Le matériau de réserve constitutif du film de réserve (102) contient un générateur de photoacide ionique, un premier polymère contenant un groupe clivable par un acide et un groupe hydrophile, et une molécule ou un second polymère ayant une affinité plus faible pour le générateur de photoacide que le premier polymère.
PCT/JP2009/005351 2009-02-27 2009-10-14 Matériau de réserve et procédé de formation d'un motif l'utilisant WO2010097857A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-045645 2009-02-27
JP2009045645A JP2010197940A (ja) 2009-02-27 2009-02-27 レジスト材料及びそれを用いたパターン形成方法

Publications (1)

Publication Number Publication Date
WO2010097857A1 true WO2010097857A1 (fr) 2010-09-02

Family

ID=42665084

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2009/005351 WO2010097857A1 (fr) 2009-02-27 2009-10-14 Matériau de réserve et procédé de formation d'un motif l'utilisant

Country Status (2)

Country Link
JP (1) JP2010197940A (fr)
WO (1) WO2010097857A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL213195A0 (en) 2010-05-31 2011-07-31 Rohm & Haas Elect Mat Photoresist compositions and emthods of forming photolithographic patterns

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000075488A (ja) * 1998-08-27 2000-03-14 Nec Corp 化学増幅系ポジ型レジスト材料
JP2003057815A (ja) * 2001-06-05 2003-02-28 Sumitomo Chem Co Ltd 化学増幅型レジスト組成物
JP2003140360A (ja) * 2001-10-31 2003-05-14 Matsushita Electric Ind Co Ltd パターン形成方法
JP2008268932A (ja) * 2007-03-28 2008-11-06 Fujifilm Corp ポジ型レジスト組成物およびパターン形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000075488A (ja) * 1998-08-27 2000-03-14 Nec Corp 化学増幅系ポジ型レジスト材料
JP2003057815A (ja) * 2001-06-05 2003-02-28 Sumitomo Chem Co Ltd 化学増幅型レジスト組成物
JP2003140360A (ja) * 2001-10-31 2003-05-14 Matsushita Electric Ind Co Ltd パターン形成方法
JP2008268932A (ja) * 2007-03-28 2008-11-06 Fujifilm Corp ポジ型レジスト組成物およびパターン形成方法

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JP2010197940A (ja) 2010-09-09

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