WO2010089261A3 - Sensormodul und verfahren zum herstellen von sensormodulen - Google Patents
Sensormodul und verfahren zum herstellen von sensormodulen Download PDFInfo
- Publication number
- WO2010089261A3 WO2010089261A3 PCT/EP2010/051113 EP2010051113W WO2010089261A3 WO 2010089261 A3 WO2010089261 A3 WO 2010089261A3 EP 2010051113 W EP2010051113 W EP 2010051113W WO 2010089261 A3 WO2010089261 A3 WO 2010089261A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sensor
- producing
- sensor module
- modules
- module
- Prior art date
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
- B81B7/0048—Packages or encapsulation for reducing stress inside of the package structure between the MEMS die and the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/0023—Packaging together an electronic processing unit die and a micromechanical structure die
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/092—Buried interconnects in the substrate or in the lid
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/094—Feed-through, via
- B81B2207/096—Feed-through, via through the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0136—Growing or depositing of a covering layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/0557—Disposition the external layer being disposed on a via connection of the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
- Details Of Audible-Bandwidth Transducers (AREA)
Abstract
Sensormodul, umfassend einen Träger (1), mindestens einen Sensorchip (3) und mindestens einen Auswertechip (4), der elektrisch an den Sensorchip (3) gekoppelt ist. Der Träger (1) weist eine Aussparung (2) auf, in der sich der Sensorchip (3) zumindest teilweise befindet. Der Auswertechip (4) ist auf dem Träger (1) angeordnet und deckt die Aussparung (2) zumindest teilweise ab.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011548652A JP5675653B2 (ja) | 2009-02-06 | 2010-01-29 | センサモジュールとその製造方法 |
US13/190,732 US9061888B2 (en) | 2009-02-06 | 2011-07-26 | Sensor module and method for producing sensor modules |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009007837A DE102009007837A1 (de) | 2009-02-06 | 2009-02-06 | Sensormodul und Verfahren zum Herstellen von Sensormodulen |
DE102009007837.1 | 2009-02-06 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/190,732 Continuation US9061888B2 (en) | 2009-02-06 | 2011-07-26 | Sensor module and method for producing sensor modules |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2010089261A2 WO2010089261A2 (de) | 2010-08-12 |
WO2010089261A3 true WO2010089261A3 (de) | 2011-06-03 |
Family
ID=42338535
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2010/051113 WO2010089261A2 (de) | 2009-02-06 | 2010-01-29 | Sensormodul und verfahren zum herstellen von sensormodulen |
Country Status (4)
Country | Link |
---|---|
US (1) | US9061888B2 (de) |
JP (1) | JP5675653B2 (de) |
DE (1) | DE102009007837A1 (de) |
WO (1) | WO2010089261A2 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8542850B2 (en) * | 2007-09-12 | 2013-09-24 | Epcos Pte Ltd | Miniature microphone assembly with hydrophobic surface coating |
DE102007058951B4 (de) * | 2007-12-07 | 2020-03-26 | Snaptrack, Inc. | MEMS Package |
DE102010006132B4 (de) | 2010-01-29 | 2013-05-08 | Epcos Ag | Miniaturisiertes elektrisches Bauelement mit einem Stapel aus einem MEMS und einem ASIC |
US8171800B1 (en) * | 2011-01-25 | 2012-05-08 | Continental Automotive Systems, Inc. | Differential pressure sensor using dual backside absolute pressure sensing |
JP5365665B2 (ja) | 2011-06-23 | 2013-12-11 | 横河電機株式会社 | センサユニット |
US8981497B2 (en) * | 2011-07-19 | 2015-03-17 | Xintec Inc. | Chip package structure and method for forming the same |
JP5768594B2 (ja) * | 2011-08-24 | 2015-08-26 | 株式会社デンソー | 半導体装置、及び、その製造方法 |
JP5633493B2 (ja) * | 2011-09-16 | 2014-12-03 | オムロン株式会社 | 半導体装置及びマイクロフォン |
DE102012102021A1 (de) * | 2012-03-09 | 2013-09-12 | Epcos Ag | Mikromechanisches Messelement und Verfahren zur Herstellung eines mikromechanischen Messelements |
US9002038B2 (en) | 2012-09-10 | 2015-04-07 | Robert Bosch Gmbh | MEMS microphone package with molded interconnect device |
US8941223B2 (en) * | 2012-09-10 | 2015-01-27 | Invensense, Inc. | MEMS device package with conductive shell |
DE102013100388B4 (de) * | 2013-01-15 | 2014-07-24 | Epcos Ag | Bauelement mit einer MEMS Komponente und Verfahren zur Herstellung |
EP2881995B1 (de) * | 2013-12-09 | 2020-07-15 | Oxford Instruments Technologies Oy | Halbleiter-Strahlungsdetektor mit großer aktiver Fläche und Verfahren zu dessen Herstellung |
DE102014200500A1 (de) * | 2014-01-14 | 2015-07-16 | Robert Bosch Gmbh | Mikromechanische Drucksensorvorrichtung und entsprechendes Herstellungsverfahren |
CN204651317U (zh) * | 2014-06-10 | 2015-09-16 | 意法半导体(格勒诺布尔2)公司 | 包括光学传感器芯片的电子设备 |
US9714166B2 (en) | 2014-07-16 | 2017-07-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thin film structure for hermetic sealing |
ITUB20153580A1 (it) * | 2015-09-11 | 2017-03-11 | St Microelectronics Srl | Dispositivo sensore microelettromeccanico con ridotta sensibilita' agli stress e relativo procedimento di fabbricazione |
WO2017054868A1 (en) * | 2015-09-30 | 2017-04-06 | Tdk Corporation | Resiliently mounted sensor system with damping |
DE102015122434A1 (de) * | 2015-12-21 | 2017-06-22 | Snaptrack, Inc. | MEMS Bauelement |
US20170325012A1 (en) * | 2016-05-06 | 2017-11-09 | Infineon Technologies Ag | Device for detecting acoustic waves |
US10163660B2 (en) | 2017-05-08 | 2018-12-25 | Tt Electronics Plc | Sensor device with media channel between substrates |
US10285275B2 (en) | 2017-05-25 | 2019-05-07 | Tt Electronics Plc | Sensor device having printed circuit board substrate with built-in media channel |
JPWO2018221400A1 (ja) * | 2017-05-30 | 2020-04-02 | 日本精機株式会社 | 圧力検出装置及び同製造方法 |
CN112158792A (zh) * | 2020-09-22 | 2021-01-01 | 浙江大学 | 一种适用于mems加速度传感器芯片的低应力封装结构 |
CN113905314A (zh) * | 2021-09-22 | 2022-01-07 | 重庆万泰电力科技有限公司 | 一种硅麦克风及其加工方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004074168A2 (en) * | 2003-02-20 | 2004-09-02 | Analog Devices, Inc. | Packaged microchip with thermal stress relief |
DE102006049004A1 (de) * | 2005-10-21 | 2007-04-26 | Denso Corp., Kariya | Sensor mit Halbleiterchip und Schaltkreischip |
US20080093722A1 (en) * | 2006-10-19 | 2008-04-24 | Norihiko Shishido | Encapsulation type semiconductor device and manufacturing method thereof |
DE102007010711A1 (de) * | 2007-02-28 | 2008-09-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Schaltanordnung und Verfahren zu deren Herstellung |
Family Cites Families (18)
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US6320257B1 (en) * | 1994-09-27 | 2001-11-20 | Foster-Miller, Inc. | Chip packaging technique |
JPH08226861A (ja) * | 1995-02-22 | 1996-09-03 | Omron Corp | 圧力センサ並びにその実装構造 |
JPH10104101A (ja) * | 1996-10-02 | 1998-04-24 | Mitsubishi Electric Corp | 半導体圧力センサ |
US6154370A (en) * | 1998-07-21 | 2000-11-28 | Lucent Technologies Inc. | Recessed flip-chip package |
JP2001083174A (ja) * | 1999-09-14 | 2001-03-30 | Matsushita Electric Ind Co Ltd | 加速度センサ |
JP2002082009A (ja) * | 2000-06-30 | 2002-03-22 | Denso Corp | 圧力センサ |
DE10164502B4 (de) * | 2001-12-28 | 2013-07-04 | Epcos Ag | Verfahren zur hermetischen Verkapselung eines Bauelements |
JP2005169541A (ja) * | 2003-12-10 | 2005-06-30 | Hitachi Metals Ltd | 半導体装置およびその製造方法 |
JP2005180930A (ja) * | 2003-12-16 | 2005-07-07 | Ricoh Co Ltd | 半導体センサ装置及びその製造方法 |
DE102004019428A1 (de) * | 2004-04-19 | 2005-08-04 | Infineon Technologies Ag | Halbleiterbauteil mit einem Hohlraumgehäuse und Verfahren zur Herstellung desselben |
JP4244920B2 (ja) * | 2004-12-14 | 2009-03-25 | 株式会社デンソー | 半導体センサ |
JP4835058B2 (ja) * | 2005-07-26 | 2011-12-14 | パナソニック電工株式会社 | センサパッケージ |
DE102005050398A1 (de) | 2005-10-20 | 2007-04-26 | Epcos Ag | Gehäuse mit Hohlraum für ein mechanisch empfindliches elektronisches Bauelement und Verfahren zur Herstellung |
US7282786B2 (en) * | 2006-01-17 | 2007-10-16 | Advanced Semiconductor Engineering Inc. | Semiconductor package and process for making the same |
KR101050334B1 (ko) | 2006-10-02 | 2011-07-19 | 파나소닉 전공 주식회사 | 압력센서 |
DE102007012335B4 (de) * | 2007-03-14 | 2013-10-31 | Infineon Technologies Ag | Sensorbauteil und Verfahren zur Herstellung eines Sensorbauteils |
JP4933934B2 (ja) * | 2007-03-28 | 2012-05-16 | ラピスセミコンダクタ株式会社 | 半導体装置及び半導体装置の製造方法 |
DE102008028757B4 (de) | 2008-06-17 | 2017-03-16 | Epcos Ag | Verfahren zur Herstellung einer Halbleiterchipanordnung |
-
2009
- 2009-02-06 DE DE102009007837A patent/DE102009007837A1/de active Pending
-
2010
- 2010-01-29 WO PCT/EP2010/051113 patent/WO2010089261A2/de active Application Filing
- 2010-01-29 JP JP2011548652A patent/JP5675653B2/ja not_active Expired - Fee Related
-
2011
- 2011-07-26 US US13/190,732 patent/US9061888B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004074168A2 (en) * | 2003-02-20 | 2004-09-02 | Analog Devices, Inc. | Packaged microchip with thermal stress relief |
DE102006049004A1 (de) * | 2005-10-21 | 2007-04-26 | Denso Corp., Kariya | Sensor mit Halbleiterchip und Schaltkreischip |
US20080093722A1 (en) * | 2006-10-19 | 2008-04-24 | Norihiko Shishido | Encapsulation type semiconductor device and manufacturing method thereof |
DE102007010711A1 (de) * | 2007-02-28 | 2008-09-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Schaltanordnung und Verfahren zu deren Herstellung |
Also Published As
Publication number | Publication date |
---|---|
JP2012517009A (ja) | 2012-07-26 |
JP5675653B2 (ja) | 2015-02-25 |
US20110298064A1 (en) | 2011-12-08 |
US9061888B2 (en) | 2015-06-23 |
WO2010089261A2 (de) | 2010-08-12 |
DE102009007837A1 (de) | 2010-08-19 |
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