WO2009154391A3 - 전력용 반도체 소자의 제조 방법 - Google Patents
전력용 반도체 소자의 제조 방법 Download PDFInfo
- Publication number
- WO2009154391A3 WO2009154391A3 PCT/KR2009/003218 KR2009003218W WO2009154391A3 WO 2009154391 A3 WO2009154391 A3 WO 2009154391A3 KR 2009003218 W KR2009003218 W KR 2009003218W WO 2009154391 A3 WO2009154391 A3 WO 2009154391A3
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- WO
- WIPO (PCT)
- Prior art keywords
- manufacturing
- semiconductor device
- power semiconductor
- size
- cost reduction
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- 238000004519 manufacturing process Methods 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66719—With a step of forming an insulating sidewall spacer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
본 발명은 전력용 반도체 소자에 관한 것으로서, 보다 상세하게는 전력 전자 소자로 사용되는 트렌치형 전력용 반도체 소자 및 그 제조방법에 관한 것이다. 상기와 같이 본 발명에 따른 전력용 반도체 소자의 제조방법은, 수직형의 디모스페트(DMOSFET)가 소자 크기를 줄이기 위해 사용되지만, 원가 경쟁이 심화되면서 원가를 줄여야 하는 압력이 가중되는 상황에서 소자의 크기를 줄이는 트렌치 모스펫을 적용하고 공정을 단순화하면서 특성을 개선할 수 있는 것으로 원가 절감에 따른 양산 및 수익 창출 향상을 도모할 수 있는 효과가 있다.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20070058974 | 2007-06-15 | ||
KR10-2008-0056271 | 2008-06-16 | ||
KR1020080056271A KR100992742B1 (ko) | 2007-06-15 | 2008-06-16 | 전력용 반도체 소자의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009154391A2 WO2009154391A2 (ko) | 2009-12-23 |
WO2009154391A3 true WO2009154391A3 (ko) | 2010-04-22 |
Family
ID=40129895
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2008/003390 WO2008153368A1 (en) | 2007-06-15 | 2008-06-16 | Manufacturing method of semiconductor power devices |
PCT/KR2009/003218 WO2009154391A2 (ko) | 2007-06-15 | 2009-06-16 | 전력용 반도체 소자의 제조 방법 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/KR2008/003390 WO2008153368A1 (en) | 2007-06-15 | 2008-06-16 | Manufacturing method of semiconductor power devices |
Country Status (6)
Country | Link |
---|---|
US (1) | US8058127B2 (ko) |
JP (1) | JP2010530136A (ko) |
KR (1) | KR100992742B1 (ko) |
CN (1) | CN101803030A (ko) |
TW (1) | TW200910469A (ko) |
WO (2) | WO2008153368A1 (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI396240B (zh) * | 2009-05-08 | 2013-05-11 | Anpec Electronics Corp | 製造功率半導體元件的方法 |
US8829614B2 (en) * | 2009-08-31 | 2014-09-09 | Alpha And Omega Semiconductor Incorporated | Integrated Schottky diode in high voltage semiconductor device |
JP5701684B2 (ja) * | 2011-05-23 | 2015-04-15 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
CN103050404B (zh) * | 2011-10-14 | 2015-08-19 | 上海华虹宏力半导体制造有限公司 | 一种mosfet器件沟槽和保护环的制造方法 |
CN103151254A (zh) * | 2013-03-18 | 2013-06-12 | 北京大学 | 一种锗基肖特基结的制备方法 |
TW201440145A (zh) * | 2013-04-09 | 2014-10-16 | Anpec Electronics Corp | 半導體功率元件的製作方法 |
CN104779164B (zh) * | 2014-01-15 | 2017-11-14 | 北大方正集团有限公司 | 一种提高沟槽型vdmos栅氧层击穿电压的方法 |
CN113838756A (zh) * | 2021-09-24 | 2021-12-24 | 南瑞联研半导体有限责任公司 | 一种改善Trench-IGBT晶圆微形变的器件制备方法 |
Citations (4)
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KR20010017801A (ko) * | 1999-08-14 | 2001-03-05 | 정선종 | 고집적 트렌치 게이트 전력소자의 제조방법 |
JP2001274396A (ja) * | 2000-03-27 | 2001-10-05 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置の製造方法 |
KR20020038955A (ko) * | 2000-08-17 | 2002-05-24 | 롤페스 요하네스 게라투스 알베르투스 | 전력 트랜지스터, 메모리 디바이스 및 반도체 디바이스제조 방법 |
KR20040030836A (ko) * | 2001-07-24 | 2004-04-09 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 반도체 장치의 제조 방법 및 셀룰러 쇼트키 정류기 |
Family Cites Families (12)
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US6031265A (en) * | 1997-10-16 | 2000-02-29 | Magepower Semiconductor Corp. | Enhancing DMOS device ruggedness by reducing transistor parasitic resistance and by inducing breakdown near gate runners and termination area |
GB9815021D0 (en) * | 1998-07-11 | 1998-09-09 | Koninkl Philips Electronics Nv | Semiconductor power device manufacture |
US6211018B1 (en) * | 1999-08-14 | 2001-04-03 | Electronics And Telecommunications Research Institute | Method for fabricating high density trench gate type power device |
GB9928285D0 (en) * | 1999-11-30 | 2000-01-26 | Koninkl Philips Electronics Nv | Manufacture of trench-gate semiconductor devices |
WO2002089195A2 (en) * | 2001-04-28 | 2002-11-07 | Koninklijke Philips Electronics N.V. | Method of manufacturing a trench-gate semiconductor device |
GB0117949D0 (en) * | 2001-07-24 | 2001-09-19 | Koninkl Philips Electronics Nv | Trench-gate semiconductor devices and their manufacture |
US6822288B2 (en) * | 2001-11-20 | 2004-11-23 | General Semiconductor, Inc. | Trench MOSFET device with polycrystalline silicon source contact structure |
US6753228B2 (en) * | 2002-10-15 | 2004-06-22 | Semiconductor Components Industries, L.L.C. | Method of forming a low resistance semiconductor device and structure therefor |
KR100498476B1 (ko) * | 2003-01-11 | 2005-07-01 | 삼성전자주식회사 | 리세스 채널 mosfet 및 그 제조방법 |
KR100500473B1 (ko) * | 2003-10-22 | 2005-07-12 | 삼성전자주식회사 | 반도체 소자에서의 리세스 게이트 트랜지스터 구조 및형성방법 |
US7049677B2 (en) * | 2004-01-28 | 2006-05-23 | Power-One, Inc. | Low cost dielectric isolation method for integration of vertical power MOSFET and lateral driver devices |
US7667264B2 (en) * | 2004-09-27 | 2010-02-23 | Alpha And Omega Semiconductor Limited | Shallow source MOSFET |
-
2008
- 2008-06-16 TW TW097122393A patent/TW200910469A/zh unknown
- 2008-06-16 US US12/664,688 patent/US8058127B2/en not_active Expired - Fee Related
- 2008-06-16 CN CN200880103615A patent/CN101803030A/zh active Pending
- 2008-06-16 WO PCT/KR2008/003390 patent/WO2008153368A1/en active Application Filing
- 2008-06-16 KR KR1020080056271A patent/KR100992742B1/ko not_active IP Right Cessation
- 2008-06-16 JP JP2010512089A patent/JP2010530136A/ja active Pending
-
2009
- 2009-06-16 WO PCT/KR2009/003218 patent/WO2009154391A2/ko active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010017801A (ko) * | 1999-08-14 | 2001-03-05 | 정선종 | 고집적 트렌치 게이트 전력소자의 제조방법 |
JP2001274396A (ja) * | 2000-03-27 | 2001-10-05 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置の製造方法 |
KR20020038955A (ko) * | 2000-08-17 | 2002-05-24 | 롤페스 요하네스 게라투스 알베르투스 | 전력 트랜지스터, 메모리 디바이스 및 반도체 디바이스제조 방법 |
KR20040030836A (ko) * | 2001-07-24 | 2004-04-09 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 반도체 장치의 제조 방법 및 셀룰러 쇼트키 정류기 |
Also Published As
Publication number | Publication date |
---|---|
WO2008153368A1 (en) | 2008-12-18 |
KR20080110547A (ko) | 2008-12-18 |
CN101803030A (zh) | 2010-08-11 |
KR100992742B1 (ko) | 2010-11-05 |
JP2010530136A (ja) | 2010-09-02 |
US20100184264A1 (en) | 2010-07-22 |
WO2009154391A2 (ko) | 2009-12-23 |
US8058127B2 (en) | 2011-11-15 |
TW200910469A (en) | 2009-03-01 |
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