WO2009154391A3 - 전력용 반도체 소자의 제조 방법 - Google Patents

전력용 반도체 소자의 제조 방법 Download PDF

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Publication number
WO2009154391A3
WO2009154391A3 PCT/KR2009/003218 KR2009003218W WO2009154391A3 WO 2009154391 A3 WO2009154391 A3 WO 2009154391A3 KR 2009003218 W KR2009003218 W KR 2009003218W WO 2009154391 A3 WO2009154391 A3 WO 2009154391A3
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manufacturing
semiconductor device
power semiconductor
size
cost reduction
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PCT/KR2009/003218
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English (en)
French (fr)
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WO2009154391A2 (ko
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이태복
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Rhee Tae Pok
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Publication of WO2009154391A2 publication Critical patent/WO2009154391A2/ko
Publication of WO2009154391A3 publication Critical patent/WO2009154391A3/ko

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234Bipolar junction transistors [BJT]
    • H01L29/66325Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333Vertical insulated gate bipolar transistors
    • H01L29/66348Vertical insulated gate bipolar transistors with a recessed gate
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    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712Vertical DMOS transistors, i.e. VDMOS transistors
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    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395Vertical transistors, e.g. vertical IGBT
    • H01L29/7396Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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    • H01L29/0684Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692Surface layout
    • H01L29/0696Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

본 발명은 전력용 반도체 소자에 관한 것으로서, 보다 상세하게는 전력 전자 소자로 사용되는 트렌치형 전력용 반도체 소자 및 그 제조방법에 관한 것이다. 상기와 같이 본 발명에 따른 전력용 반도체 소자의 제조방법은, 수직형의 디모스페트(DMOSFET)가 소자 크기를 줄이기 위해 사용되지만, 원가 경쟁이 심화되면서 원가를 줄여야 하는 압력이 가중되는 상황에서 소자의 크기를 줄이는 트렌치 모스펫을 적용하고 공정을 단순화하면서 특성을 개선할 수 있는 것으로 원가 절감에 따른 양산 및 수익 창출 향상을 도모할 수 있는 효과가 있다.
PCT/KR2009/003218 2007-06-15 2009-06-16 전력용 반도체 소자의 제조 방법 WO2009154391A2 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20070058974 2007-06-15
KR10-2008-0056271 2008-06-16
KR1020080056271A KR100992742B1 (ko) 2007-06-15 2008-06-16 전력용 반도체 소자의 제조 방법

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WO2009154391A2 WO2009154391A2 (ko) 2009-12-23
WO2009154391A3 true WO2009154391A3 (ko) 2010-04-22

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PCT/KR2009/003218 WO2009154391A2 (ko) 2007-06-15 2009-06-16 전력용 반도체 소자의 제조 방법

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US (1) US8058127B2 (ko)
JP (1) JP2010530136A (ko)
KR (1) KR100992742B1 (ko)
CN (1) CN101803030A (ko)
TW (1) TW200910469A (ko)
WO (2) WO2008153368A1 (ko)

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TWI396240B (zh) * 2009-05-08 2013-05-11 Anpec Electronics Corp 製造功率半導體元件的方法
US8829614B2 (en) * 2009-08-31 2014-09-09 Alpha And Omega Semiconductor Incorporated Integrated Schottky diode in high voltage semiconductor device
JP5701684B2 (ja) * 2011-05-23 2015-04-15 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
CN103050404B (zh) * 2011-10-14 2015-08-19 上海华虹宏力半导体制造有限公司 一种mosfet器件沟槽和保护环的制造方法
CN103151254A (zh) * 2013-03-18 2013-06-12 北京大学 一种锗基肖特基结的制备方法
TW201440145A (zh) * 2013-04-09 2014-10-16 Anpec Electronics Corp 半導體功率元件的製作方法
CN104779164B (zh) * 2014-01-15 2017-11-14 北大方正集团有限公司 一种提高沟槽型vdmos栅氧层击穿电压的方法
CN113838756A (zh) * 2021-09-24 2021-12-24 南瑞联研半导体有限责任公司 一种改善Trench-IGBT晶圆微形变的器件制备方法

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Publication number Publication date
WO2008153368A1 (en) 2008-12-18
KR20080110547A (ko) 2008-12-18
CN101803030A (zh) 2010-08-11
KR100992742B1 (ko) 2010-11-05
JP2010530136A (ja) 2010-09-02
US20100184264A1 (en) 2010-07-22
WO2009154391A2 (ko) 2009-12-23
US8058127B2 (en) 2011-11-15
TW200910469A (en) 2009-03-01

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