WO2010079581A1 - Transistor à couches minces et son procédé de fabrication - Google Patents

Transistor à couches minces et son procédé de fabrication Download PDF

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Publication number
WO2010079581A1
WO2010079581A1 PCT/JP2009/007330 JP2009007330W WO2010079581A1 WO 2010079581 A1 WO2010079581 A1 WO 2010079581A1 JP 2009007330 W JP2009007330 W JP 2009007330W WO 2010079581 A1 WO2010079581 A1 WO 2010079581A1
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oxide
thin film
film transistor
semiconductor film
amorphous
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PCT/JP2009/007330
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English (en)
Japanese (ja)
Inventor
笠見雅司
井上一吉
矢野公規
笘井重和
川嶋浩和
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出光興産株式会社
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Publication of WO2010079581A1 publication Critical patent/WO2010079581A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Definitions

  • the present invention relates to a thin film transistor. More particularly, the present invention relates to a thin film transistor including an oxide semiconductor film.
  • IGZO indium oxide-gallium oxide-zinc oxide
  • a thin film transistor containing IGZO as a component is made of a quaternary oxide whose components are In, Ga, Zn, and O.
  • the composition of the sputtering target and the composition of the obtained thin film are changed, or the center of the glass is formed when the film is formed with a large film forming apparatus
  • the composition of the portion and the peripheral portion may be different, and the transistor characteristics (mobility, threshold voltage Vth, S value) of the glass central portion and the peripheral portion may be different, and it may be difficult to increase the uniformity of these. there were.
  • Patent Document 1 There is also a report of a crystalline thin film transistor using indium oxide (Patent Document 1). In this case, only a normally-on thin film transistor characteristic is shown, and a normally-off amorphous thin film transistor has been desired.
  • An object of the present invention is to provide a thin film transistor including an oxide semiconductor film exhibiting normally-off thin film transistor characteristics, and a manufacturing method thereof.
  • “normally off” is defined as a case where the value of the threshold voltage is positive.
  • the threshold voltage is obtained from the X-intercept of the transfer curve (drain current-gate voltage) graph.
  • the present inventors have intensively studied, and an oxide thin film transistor including an oxide semiconductor including indium oxide and one or more oxides selected from oxides of specific elements.
  • an oxide thin film transistor including an oxide semiconductor including indium oxide and one or more oxides selected from oxides of specific elements have intensively studied, and an oxide thin film transistor including an oxide semiconductor including indium oxide and one or more oxides selected from oxides of specific elements.
  • normally-off thin film transistor characteristics are exhibited, and the present invention has been completed.
  • the following thin film transistor and method for manufacturing the same are provided.
  • an oxide thin film transistor exhibiting normally-off thin film transistor characteristics can be provided.
  • a method for manufacturing an oxide thin film transistor exhibiting normally-off thin film transistor characteristics can be provided.
  • the oxide thin film transistor of the present invention includes indium oxide, lanthanum oxide, neodymium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, and erbium oxide.
  • the value of the atomic ratio M / (In + M) is 0.1 or more and 0.4
  • An oxide semiconductor film including the following is included.
  • the oxide semiconductor film of the present invention includes indium oxide and an oxide represented by M 2 O 3, where M is lanthanum, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, and It is one or more elements selected from the group consisting of ytterbium, and the value of atomic ratio M / (In + M) is 0.1 or more and 0.4 or less.
  • M is lanthanum, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, and It is one or more elements selected from the group consisting of ytterbium, and the value of atomic ratio M / (In + M) is 0.1 or more and 0.4 or less.
  • the oxide semiconductor film is not limited to an amorphous film, but an amorphous semiconductor film is more preferable because it is less likely to react with oxygen at the time of film formation and can reduce the possibility that the characteristics of the transistor change.
  • the oxide semiconductor film used in the present invention can obtain an amorphous film by containing indium oxide and the specific positive trivalent lanthanoid metal oxide.
  • the “amorphous film” means a layer in which a crystal peak cannot be confirmed by X-ray diffraction.
  • the amorphous oxide semiconductor film in the present invention may be referred to as a semiconductor film (thin film), an amorphous oxide film (thin film), or an amorphous semiconductor film (thin film).
  • the carrier concentration of the semiconductor film can be reduced, and the carrier concentration of the semiconductor film is 2 ⁇ 10 +17 cm ⁇ 3 at a temperature near room temperature. Therefore, good thin film transistor characteristics are exhibited.
  • the carrier concentration at temperatures near room temperature is preferably less than 1 ⁇ 10 +17 cm ⁇ 3 .
  • the thin film transistor (hereinafter sometimes referred to as TFT) may not be driven. Even when the TFT is driven, it may be normally on, the threshold voltage may be greatly negative, or the On-Off value may be small.
  • the oxide of M 2 O 3 the value of the atomic ratio M / (In + M) needs to be 0.1 or more and 0.4 or less. By setting the atomic ratio in such a range, indium oxide becomes a main component of the oxide semiconductor, a normally-off characteristic, high mobility, a small S value (fast rise in the transfer curve) transistor. Can be achieved.
  • content of each metal element can be calculated
  • content of each metal element can be implemented by adjusting the abundance of each element of the sputtering target used when forming a semiconductor film, for example.
  • the composition of the semiconductor film substantially matches the composition of the sputtering target.
  • the semiconductor film may contain components other than indium oxide and the specific positive trivalent lanthanoid metal oxide.
  • gallium oxide, scandium oxide, or the like may be contained.
  • the semiconductor film used in the present invention may consist essentially of indium oxide and the specific positive trivalent lanthanoid metal oxide, or may consist only of these components. “Substantially” means that the semiconductor film can contain other components in addition to the indium oxide and the specific positive trivalent lanthanoid metal oxide.
  • the substrate can be used for the substrate, gate electrode, gate insulating film, source / drain electrode, and the like, and are not particularly limited.
  • a metal thin film such as Al, Cu, or Au can be used for each electrode, and an oxide thin film such as a silicon oxide film or a hafnium oxide film can be used for the gate insulating film.
  • FIG. 1 is a schematic cross-sectional view showing an embodiment of a thin film transistor of the present invention.
  • the thin film transistor 1 has a gate electrode 20 sandwiched between a substrate 10 and a gate insulating film 30, and a semiconductor film (channel layer) 40 is stacked on the gate insulating film 30 as an active layer. Further, a source electrode 50 and a drain electrode 52 are provided so as to cover the vicinity of the end of the semiconductor film 40. A channel portion 60 is formed in a portion surrounded by the semiconductor film 40, the source electrode 50 and the drain electrode 52. 1 is a so-called channel etch type thin film transistor.
  • the thin film transistor of the present invention is not limited to a channel etch type thin film transistor, and an element configuration known in this technical field can be adopted. For example, an etch stopper type thin film transistor may be used.
  • FIG. 2 is a schematic cross-sectional view showing another embodiment of the thin film transistor of the present invention.
  • the thin film transistor 2 is a so-called etch stopper type thin film transistor.
  • the thin film transistor 2 has the same configuration as the thin film transistor 1 described above except that an etch stopper 70 is formed so as to cover the channel portion 60.
  • a source electrode 50 and a drain electrode 52 are provided so as to cover the vicinity of the end of the semiconductor film 40 and the vicinity of the end of the etch stopper 70.
  • a semiconductor film containing indium oxide and the specific positive trivalent lanthanoid metal oxide is used for the semiconductor film 40. Note that when the semiconductor film is an amorphous film, the etching processability is excellent and the productivity of the thin film transistor can be increased.
  • the structure of the thin film transistor is preferably an etch stopper type thin film transistor.
  • the oxide thin film to be the thin film transistor of the present invention is easily dissolved in a metal etching solution.
  • an oxide thin film island can be formed simultaneously with the electrode formation, and the number of photomasks used can be reduced.
  • the oxide thin film cannot be dissolved by the etching solution for etching the source / drain wiring / source / drain electrode, it is necessary to change the etching solution and the photomask, and the process becomes complicated and not industrial.
  • the method for producing a thin film transistor of the present invention includes a step of forming an oxide semiconductor film constituting the oxide thin film transistor of the present invention by sputtering, and oxygen during the sputtering.
  • the concentration is 2 to 20% by volume, and the substrate temperature is from room temperature to 200 ° C. or less.
  • a thin film having the same composition as the sputtering target can be obtained even when the oxide semiconductor film is formed by a sputtering process, and the application to a large glass substrate is facilitated. Further, by setting the oxygen concentration during sputtering to 2 to 20% by volume, uniform transistor characteristics can be provided in the transistor stabilization treatment step performed in the next step.
  • the substrate temperature at that time is from room temperature to 200 ° C. or less.
  • a cooling device is required, which is not economical. If it exceeds 200 ° C., the heating cost may increase, and the oxide thin film may be easily crystallized. When the oxide thin film is crystallized, a residue may be generated in the etching process or etching may not be performed, and an island having a desired shape may not be formed.
  • the substrate temperature may be adjusted as appropriate depending on the type of substrate and heat resistance.
  • the oxide semiconductor film formed by sputtering it is preferable to heat-treat the oxide semiconductor film formed by sputtering as described above at 150 to 450 ° C. for 0.5 to 1200 minutes after forming the source / drain electrodes. If it is lower than 150 ° C., there is a possibility of being normally on, and a stable thin film transistor may not be obtained. In addition, when it exceeds 450 degreeC, there exists a possibility that it may become crystalline.
  • a lamp annealing device for heat treatment of the semiconductor film, a lamp annealing device, a laser annealing device, a hot air heating device, a contact heating device, or the like can be used in the air or a nitrogen atmosphere.
  • the heat treatment temperature is more preferably 180 ° C. to 350 ° C., and particularly preferably 200 ° C. to 300 ° C.
  • the heat treatment time is less than 0.5 minutes, the heat treatment time is too short and thermal stabilization of the film may be insufficient. If it exceeds 1200 minutes, it takes too much time and is not productive.
  • the heat treatment time is more preferably 1 minute to 600 minutes, and particularly preferably 5 minutes to 60 minutes.
  • the heat treatment is preferably performed after the formation of the source / drain wiring / source / drain electrodes.
  • the resistance value of the source / drain wiring / source / drain electrode can be reduced, and the characteristics of the oxide thin film transistor can be stabilized.
  • the oxide thin film is formed by sputtering, and is often thinned in a non-equilibrium state immediately after the film formation, so that the internal stress may not be uniform or the density in the thickness direction may be distributed. .
  • the oxide thin film is not in an equilibrium state, the state of the oxide thin film is not uniform depending on the location, and thus transistor characteristics (particularly, On / Off value, mobility, threshold voltage Vth, S value) may vary. is there.
  • transistor characteristics particularly, On / Off value, mobility, threshold voltage Vth, S value
  • the characteristics of the oxide thin film transistor can be stabilized. Further, there is an effect of reducing the contact resistance between the source / drain wiring / source / drain electrode and the oxide thin film transistor, and more stable transistor characteristics can be obtained.
  • FIG. 3 shows a mask pattern to be used, and the left side is a cross-sectional view of a layered structure formed by the mask at a dotted line portion shown in the mask pattern.
  • a metal thin film is formed on glass (substrate 10), and resist coating, exposure, development, etching, resist peeling, and washing are performed to form gate wiring / gate electrode 20.
  • a first photomask for forming a desired shape of the gate wiring / gate electrode 20 is used.
  • an oxide thin film (semiconductor film 40) of the present invention and an SiO 2 thin film to be an etch stopper 70 are formed, resist coating, exposure, Development, etching, resist stripping, and cleaning are performed to form a desired etch stopper shape.
  • the etching is preferably performed by a dry process.
  • SiO 2 can be etched by a dry process using CF 4 and oxygen as etching gases. At this time, a second photomask is used to form an etch stopper having a desired shape.
  • a metal thin film to be the source / drain electrodes 50, 52 is formed, and resist application, exposure, development, etching, resist stripping, and cleaning are performed to form desired source / drain wirings / source / drain electrodes 50, 52.
  • the portion of the metal thin film that becomes the channel portion 60 can be removed. Since the oxide thin film can be easily etched with a metal etching solution, an island (island structure) to be an oxide thin film transistor can be formed.
  • an island (island structure) to be an oxide thin film transistor can be formed simultaneously with the etching solution for forming the source / drain wiring / source / drain electrode using the third photomask.
  • Example 1 ⁇ Production of Thin Film Transistor>
  • the etch stopper type thin film transistor shown in FIG. 4 was manufactured by a photoresist method.
  • Amorphous oxide thin film) 40 was formed.
  • Sputtering was carried out at room temperature with a sputtering power of 100 W while evacuating until the back pressure reached 5 ⁇ 10 ⁇ 4 Pa, adjusting the pressure to 0.2 Pa while flowing argon 9.5 sccm and oxygen 0.5 sccm. It was.
  • etch stopper layer was formed by dry etching with CF 4 .
  • the resist was stripped with a resist stripper, washed with water, and dried by air blow.
  • a molybdenum metal film was formed to 300 nm on the semiconductor film 40 and the etch stopper 70.
  • a resist was applied to the molybdenum metal film, and prebaked at 80 ° C. for 15 minutes. Thereafter, the resist film was irradiated with UV light (light intensity: 300 mJ / cm 2 ) through a mask, and then developed with 3 wt% tetramethylammonium hydroxide (TMAH). After washing with pure water, the resist film was post-baked at 130 ° C. for 15 minutes to form a resist pattern in the shape of the source electrode 50 and the drain electrode 52.
  • UV light light intensity: 300 mJ / cm 2
  • TMAH 3 wt% tetramethylammonium hydroxide
  • the substrate with a resist pattern was treated with a mixed acid of phosphoric acid, acetic acid and nitric acid, so that the molybdenum metal film and the amorphous oxide thin film 40 were simultaneously etched.
  • the molybdenum metal film on the channel portion protected by the etch stopper is etched to form the channel portion 60.
  • the substrate was heat-treated. Specifically, the substrate was heat-treated at 300 ° C. for 30 minutes in the air in a hot air heating furnace.
  • the resistance value of the source / drain wiring / source / drain electrode can be reduced and the contact resistance with the amorphous oxide thin film transistor can be reduced. There is.
  • the performance of the thin film transistor manufactured by changing the position of the substrate was almost the same and stable.
  • the composition of the semiconductor film was measured with an ICP apparatus, it was the same as the composition of the target.
  • the film formation substrate had a uniform composition.
  • the internal stress was 5 ⁇ 10 ⁇ 10 dyn ⁇ cm ⁇ 2 or less, showed only a small internal stress, and was stable with almost no distribution in the substrate.
  • the on-off ratio was 10 6 , and the thin film transistor exhibited normally-off characteristics. The output characteristics showed a clear pinch-off.
  • X-ray diffraction (XRD) measurement of the obtained semiconductor film was carried out, the peak of the structure resulting from indium oxide and neodymium oxide was not observed, but a broad X-ray diffraction pattern was obtained. This confirmed that the semiconductor film was amorphous.
  • the carrier concentration determined by hole measurement was 2.9 ⁇ 10 +16 cm ⁇ 3 .
  • the on-off ratio was 10 6 , and the thin film transistor exhibited normally-off characteristics. The output characteristics showed a clear pinch-off.
  • the X-ray diffraction (XRD) measurement of the obtained semiconductor film was carried out, the peak of the structure resulting from an indium oxide and a terbium oxide was not observed, but the broad X-ray diffraction pattern was obtained. This confirmed that the semiconductor film was amorphous. Further, the carrier concentration determined by Hall measurement was 3.7 ⁇ 10 +16 cm ⁇ 3 .
  • X-ray diffraction (XRD) measurement of the obtained semiconductor film was performed, the peak of the structure due to indium oxide and lanthanum oxide was not observed, and a broad X-ray diffraction pattern was obtained. This confirmed that the semiconductor film was amorphous.
  • the carrier concentration determined by hole measurement was 0.95 ⁇ 10 +16 cm ⁇ 3 .
  • the on-off ratio was 10 6 , and the thin film transistor exhibited normally-off characteristics. The output characteristics showed a clear pinch-off.
  • X-ray diffraction (XRD) measurement of the obtained semiconductor film was performed, the peak of the structure due to indium oxide and samarium oxide was not observed, and a broad X-ray diffraction pattern was obtained. This confirmed that the semiconductor film was amorphous.
  • the carrier concentration determined by hole measurement was 1.4 ⁇ 10 +16 cm ⁇ 3 .
  • X-ray diffraction (XRD) measurement of the obtained semiconductor film was performed, a peak of the structure due to indium oxide and europium oxide was not observed, and a broad X-ray diffraction pattern was obtained. This confirmed that the semiconductor film was amorphous.
  • the carrier concentration determined by hole measurement was 2.1 ⁇ 10 +16 cm ⁇ 3 .
  • the on-off ratio was 10 6 , and the thin film transistor exhibited normally-off characteristics. The output characteristics showed a clear pinch-off.
  • the X-ray diffraction (XRD) measurement of the obtained semiconductor film was performed, the peak of the structure due to indium oxide and holmium oxide was not observed, and a broad X-ray diffraction pattern was obtained. This confirmed that the semiconductor film was amorphous. Further, the carrier concentration determined by Hall measurement was 5.1 ⁇ 10 +16 cm ⁇ 3 .
  • the on-off ratio was 10 6 , and the thin film transistor exhibited normally-off characteristics. The output characteristics showed a clear pinch-off.
  • X-ray diffraction (XRD) measurement of the obtained semiconductor film was performed, the peak of the structure due to indium oxide and thulium oxide was not observed, and a broad X-ray diffraction pattern was obtained. This confirmed that the semiconductor film was amorphous.
  • the carrier concentration determined by hole measurement was 2.7 ⁇ 10 +16 cm ⁇ 3 .
  • the on-off ratio was 10 8 , and the thin film transistor exhibited normally-off characteristics. The output characteristics showed a clear pinch-off.
  • X-ray diffraction (XRD) measurement of the obtained semiconductor film was performed, a peak of the structure due to indium oxide and ytterbium oxide was not observed, and a broad X-ray diffraction pattern was obtained. This confirmed that the semiconductor film was amorphous. Further, the carrier concentration determined by Hall measurement was 3.6 ⁇ 10 +16 cm ⁇ 3 .
  • Comparative Example 1 A thin film transistor was fabricated in the same manner as in Example 1 except that a target made of indium oxide (purity: 99.9%) (total of Sn, Ti, Zr as impurities: 120 ppm included) was used as the sputtering target.
  • the field effect mobility of this thin film transistor 46cm 2 / V ⁇ sec, On / OFF ratio is 10 5
  • the threshold voltage Vth is -12V
  • S value is 2.4V / dec.
  • the thin film transistor exhibits normally-on characteristics.
  • the carrier concentration obtained from the hole measurement was 1.4 ⁇ 10 18 cm ⁇ 3 .
  • the carrier concentration obtained from the hole measurement was 10 14 cm ⁇ 3 or less.
  • the channel layer was a semiconductor, and the field effect mobility of this thin film transistor was 40.1 cm 2 / V ⁇ sec.
  • the On-Off ratio is as small as 10 3 and the S value is 4.2 V / dec. Met.
  • the thin film transistor exhibits normally-on characteristics. The output characteristics showed a clear pinch-off.
  • the shift voltage ( ⁇ Vth) after applying 20V voltage to the gate electrode for 100 minutes was 0.29V.
  • the carrier concentration determined from the hole measurement was 4.8 ⁇ 10 18 cm ⁇ 3 .
  • the carrier concentration obtained from the hole measurement was 1.4 ⁇ 10 20 cm ⁇ 3 .
  • Table 1 below collectively shows the structures and characteristics of the oxide semiconductor films used in Examples and Comparative Examples.
  • the amorphous oxide thin film transistor of the present invention can be suitably used for sensors such as display panels, RFID tags, X-ray detector panels, fingerprint sensors, and photosensors.
  • the method for producing a thin film transistor of the present invention is particularly suitable for a method for producing an etch stopper type thin film transistor.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Abstract

Le transistor à couches minces selon la présente invention comprend une couche semi-conductrice d’oxyde contenant de l’oxyde d’indium et au moins un oxyde sélectionné dans le groupe constitué par l’oxyde de lanthane, l’oxyde de néodyme, l’oxyde de samarium, l’oxyde d’europium, l’oxyde de gadolinium, l’oxyde de terbium, l’oxyde de dysprosium, l’oxyde d’holmium, l’oxyde d’erbium, l’oxyde de thulium et l’oxyde de ytterbium, où le rapport atomique M/(In + M) est de 0,1 à 0,4 inclus lorsque le ou les oxydes sont représentés par M2O3.
PCT/JP2009/007330 2009-01-08 2009-12-28 Transistor à couches minces et son procédé de fabrication WO2010079581A1 (fr)

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JP2009002829A JP2010161227A (ja) 2009-01-08 2009-01-08 薄膜トランジスタ及びその製造方法
JP2009-002829 2009-01-08

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
US20150076487A1 (en) * 2012-03-23 2015-03-19 Japan Science And Technology Agency Thin film transistor and method for manufacturing thin film transistor
CN113078042A (zh) * 2021-03-22 2021-07-06 青岛科技大学 一种薄膜晶体管制备方法

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JP5782695B2 (ja) * 2010-09-29 2015-09-24 凸版印刷株式会社 薄膜トランジスタ、薄膜トランジスタを備える画像表示装置、薄膜トランジスタの製造方法、画像表示装置の製造方法
US8716708B2 (en) 2011-09-29 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI515910B (zh) 2011-12-22 2016-01-01 群創光電股份有限公司 薄膜電晶體基板與其製作方法、顯示器
US20150214375A1 (en) * 2012-09-12 2015-07-30 Sharp Kabushiki Kaisha Circuit substrate, manufacturing method thereof and display device
JP6263721B2 (ja) 2014-06-20 2018-01-24 株式会社Ｊｏｌｅｄ 薄膜トランジスタ、薄膜トランジスタの製造方法及び有機ｅｌ表示装置
US10008611B2 (en) 2014-06-26 2018-06-26 Joled Inc. Thin film transistor and organic EL display device
WO2017013691A1 (fr) 2015-07-17 2017-01-26 株式会社Ｊｏｌｅｄ Transistor en couches minces et procédé de fabrication d'un transistor en couches minces

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JP2008166716A (ja) * 2006-12-05 2008-07-17 Canon Inc ボトムゲート型薄膜トランジスタ、ボトムゲート型薄膜トランジスタの製造方法及び表示装置
JP2008276212A (ja) * 2007-04-05 2008-11-13 Fujifilm Corp 有機電界発光表示装置
WO2008139860A1 (fr) * 2007-05-07 2008-11-20 Idemitsu Kosan Co., Ltd. Film fin à semi-conducteur, procédé de fabrication d'un film fin à semi-conducteur et élément semi-conducteur

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JP2008166716A (ja) * 2006-12-05 2008-07-17 Canon Inc ボトムゲート型薄膜トランジスタ、ボトムゲート型薄膜トランジスタの製造方法及び表示装置
JP2008276212A (ja) * 2007-04-05 2008-11-13 Fujifilm Corp 有機電界発光表示装置
WO2008139860A1 (fr) * 2007-05-07 2008-11-20 Idemitsu Kosan Co., Ltd. Film fin à semi-conducteur, procédé de fabrication d'un film fin à semi-conducteur et élément semi-conducteur

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150076487A1 (en) * 2012-03-23 2015-03-19 Japan Science And Technology Agency Thin film transistor and method for manufacturing thin film transistor
US9536993B2 (en) * 2012-03-23 2017-01-03 Japan Science And Technology Agency Thin film transistor and method for manufacturing thin film transistor
US10847657B2 (en) 2012-03-23 2020-11-24 Japan Science And Technology Agency Method for manufacturing thin film transistor with oxide semiconductor channel
CN113078042A (zh) * 2021-03-22 2021-07-06 青岛科技大学 一种薄膜晶体管制备方法
CN113078042B (zh) * 2021-03-22 2022-04-26 青岛科技大学 一种薄膜晶体管制备方法

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TW201034204A (en) 2010-09-16

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