WO2010073639A1 - 可撓性基板および電子機器 - Google Patents
可撓性基板および電子機器 Download PDFInfo
- Publication number
- WO2010073639A1 WO2010073639A1 PCT/JP2009/007145 JP2009007145W WO2010073639A1 WO 2010073639 A1 WO2010073639 A1 WO 2010073639A1 JP 2009007145 W JP2009007145 W JP 2009007145W WO 2010073639 A1 WO2010073639 A1 WO 2010073639A1
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- resin film
- flexible substrate
- resin
- acid
- substrate according
- Prior art date
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- H05K3/305—Affixing by adhesive
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- Y10T428/31721—Of polyimide
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31725—Of polyamide
Definitions
- the present invention relates to a flexible substrate and an electronic device.
- a flip chip type package is configured by connecting a bump formed of solder or the like and an organic or inorganic rigid substrate subjected to wiring processing to constitute a semiconductor device.
- Such an object is achieved by the present invention described in the following (1) to (13).
- (1) It has the 1st resin film which has flux activity, and the 2nd resin film different from the 1st resin film laminated on the 1st resin film, and has a plurality on the surface of the 1st resin film
- a flexible substrate characterized in that after mounting electronic components, the first resin film is used by being collectively bonded to each electronic component, and the gel time at 230 ° C. of the first resin film is 100 seconds or more and 600 seconds or less.
- (2) The flexible substrate according to (1), wherein the reductive maintenance ratio of the first resin film calculated by Equation 1 from the amount of acid measured under the following measurement conditions is 15% or more. .
- the said 1st resin film is a flexible substrate of (1) or (2) comprised by the resin composition containing a thermosetting resin and the compound which has flux activity.
- a plurality of electronic components are mounted on the surface of the first resin film of a flexible substrate formed by laminating a first resin film having flux activity and a second resin film different from the first resin film. And a step of bonding the electronic components and the flexible substrate together, and a step of separating the plurality of electronic components together with the flexible substrate after the bonding step, An electronic device manufacturing method, wherein the flexible substrate is any one of (1) to (11).
- the flexible substrate which makes it possible to provide the electronic device which can respond to refinement
- the flexible substrate of the present invention is a flexible substrate formed by laminating a first resin film having flux activity and a second resin film different from the first resin film, After mounting a plurality of electronic components on the surface of the first resin film, the electronic components and the flexible substrate are bonded together and used.
- the gel time at 230 ° C. of the first resin film is 100 seconds or more and 600 seconds or less.
- an electronic device according to the present invention includes the flexible substrate described above.
- FIG. 1 is a cross-sectional view illustrating an example of a flexible substrate.
- the flexible substrate 10 is a laminate of a first resin film 1 having flux activity and a second resin film 2 different from the first resin film 1.
- a through hole (not shown) is formed in the second resin film 2, and the conductive member 21 is filled in the through hole.
- a conductor layer 22 is formed on one surface side (the lower surface in FIG. 1) of the second resin film 2.
- a protruding electrode 23 is formed on the other surface (the upper surface in FIG. 1) of the second resin film 2 so as to cover the conductor member 21.
- the first resin film 1 is laminated on the second resin film 2 so as to cover the protruding electrodes 23.
- Such a first resin film is, for example, a resin composition containing a thermoplastic resin and a resin having flux activity, a resin composition containing a thermosetting resin, a compound having flux activity, and a film-forming resin. It consists of Among these, it is preferable to be comprised with the resin composition containing a thermosetting resin, the compound which has flux activity, and film-forming resin. Thereby, it is excellent in heat resistance with respect to heat processing, such as solder reflow.
- the thermosetting resin include an epoxy resin, an oxetane resin, a phenol resin, a (meth) acrylate resin, an unsaturated polyester resin, a diallyl phthalate resin, and a maleimide resin. Among these, an epoxy resin is used. preferable. Epoxy resins are suitably used as thermosetting resins because they are excellent in curability and storage stability, heat resistance of cured products, moisture resistance, chemical resistance, and the like.
- the content of the thermosetting resin is preferably 20% by weight to 80% by weight, and particularly preferably 30% by weight to 70% by weight of the entire resin composition. When the content is within the above range, good curability can be obtained, and good melting behavior can be designed.
- the compound having the flux activity reduces the oxide film on the surface of the solder bump when the resin composition is melted to improve the wettability of the solder component constituting the solder bump, and the connection between the opposing internal electrodes of the semiconductor chip The resistance value can be reduced.
- the flux active compound include compounds containing a phenolic hydroxyl group and a carboxyl group.
- the phenolic hydroxyl group-containing compound include phenol, o-cresol, 2,6-xylenol, p-cresol, m-cresol, o-ethylphenol, 2,4-xylenol, 2,5 xylenol, and m-ethylphenol.
- Examples of the carboxyl group-containing compound include aliphatic acid anhydrides, alicyclic acid anhydrides, aromatic acid anhydrides, aliphatic carboxylic acids, aromatic carboxylic acids, and phenols.
- examples of the aliphatic acid anhydride include succinic anhydride, polyadipic acid anhydride, polyazeline acid anhydride, polysebacic acid anhydride, and the like.
- Alicyclic acid anhydrides include methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylhymic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, methylcyclohexene dicarboxylic acid anhydride Thing etc. are mentioned.
- the aromatic acid anhydride include phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic anhydride, ethylene glycol bistrimellitate, glycerol tristrimitate, and the like.
- Aliphatic carboxylic acids include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, pivalic acid, caproic acid, caprylic acid, lauric acid, myristic acid, palmitic acid, stearic acid, acrylic acid, methacrylic acid, crotonic acid, olein Examples include acid, fumaric acid, maleic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, sebacic acid, dodecanedioic acid, and pimelic acid.
- aliphatic carboxylic acids represented by HOOC— (CH 2 ) n —COOH (n is an integer of 0 to 20) are preferable, and for example, adipic acid, sebacic acid, and dodecanedioic acid are preferable.
- Aromatic carboxylic acids include benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, hemimellitic acid, trimellitic acid, trimesic acid, merophanic acid, platnic acid, pyromellitic acid, merit acid, triylic acid, xylyl acid, hemelitto Acid, mesitylene acid, prenylic acid, toluic acid, cinnamic acid, salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6-dihydroxy Benzoic acid, 3,5-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3,5 Naphthoic acid derivatives such as -2-dihydroxy-2-naphthoic acid;
- the flux active compound has a function of reducing the oxide film on the surface of the solder bumps to such an extent that it can be electrically bonded to the conductor member, and has a functional group that binds to the resin component (curing having flux activity).
- the curing agent having flux activity may have a carboxyl group and a group that reacts with the epoxy group (for example, a carboxyl group, a hydroxyl group, an amino group, etc.).
- the curing agent having flux activity shows an action of reducing the oxide film on the surface of the solder bump to such an extent that it can be electrically bonded to the conductor member when soldering, and is taken into the resin skeleton for the subsequent curing reaction. Will be. Therefore, the flux cleaning process can be omitted.
- the film-forming resin examples include (meth) acrylic resin, phenoxy resin, polyester resin, polyurethane resin, polyimide resin, siloxane-modified polyimide resin, polybutadiene, polypropylene, styrene-butadiene-styrene copolymer, styrene-ethylene- Butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, polyamide resin, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer Examples include coalescence, polyvinyl acetate, and nylon. These may be used alone or in combination of two or more. Among these, at least one selected from the group consisting of (meth) acrylic resins, phenoxy resins, and polyimi
- the weight average molecular weight of the film-forming resin is not particularly limited, but is preferably 100,000 or more, more preferably 150,000 to 1,000,000, still more preferably 250,000 to 900,000. When the weight average molecular weight is in the above range, the film formability can be further improved.
- the content of the film-forming resin is not particularly limited, but is preferably 10% to 50% by weight, more preferably 15% to 40% by weight, and particularly 20% to 35% by weight of the entire resin composition. Is preferred. When the content is within the above range, the fluidity of the resin component before melting the adhesive film can be suppressed, and the handling of the adhesive film becomes easy.
- AS resin acrylonitrile / butadiene resin
- ABS resin acrylonitrile / butadiene / styrene resin
- PBT polyethylene terephthalate
- PBT ultra high molecular weight
- General-purpose engineering plastics such as polyethylene, polybutylene terephthalate (PBT), methylpentene, polybenzoxazole, polyethylene phthalate, polyester, polycarbonate, polyimide (PI), Rephenylene sulfide (PPS), polyetheretherketone (PEEK), liquid crystal polymer (LCP), polytetrafluoroethylene (PTFE), polyetherimide (PEI), polyarylate (PAR), polysulfone (PSF), polyethersulfur Examples thereof include super engineering resins having high heat resistance such as phon (PES), polyamideimide (PAI), and nylon resin.
- the resin composition may contain additives such as a coupling agent, a curing accelerator, a filler, and a surfactant in addition to the above-described thermosetting resin, film-forming resin, and flux active compound.
- additives such as a coupling agent, a curing accelerator, a filler, and a surfactant in addition to the above-described thermosetting resin, film-forming resin, and flux active compound.
- the first resin film can be obtained, for example, by applying the resin composition as described above to a substrate and drying it.
- the thickness of the first resin film 1 is not particularly limited, but is preferably 1 ⁇ m to 80 ⁇ m, and particularly preferably 5 ⁇ m to 50 ⁇ m. When the thickness is within the above range, the gap filling property (the gap between the connected members formed by the electrodes of the semiconductor member is present without gaps or air traps) and the creeping property on the semiconductor component ( At the time of connection, the resin film flows excessively onto the semiconductor component due to the flow of the resin film, and the connection equipment is contaminated).
- the melt viscosity at 120 ° C. of the first resin film 1 is preferably 0.1 Pa ⁇ s to 10,000 Pa ⁇ s, more preferably 1 Pa ⁇ s to 10,000 Pa ⁇ s, and particularly 1 Pa ⁇ s. It is preferably s to 100 Pa ⁇ s.
- the connectivity of the electrodes of the semiconductor member is particularly excellent.
- the said melt viscosity can be evaluated by the temperature increase rate of 10 degree-C / min, for example using a rheometer (made by Haake).
- the lower limit of the gel time at 230 ° C. of the first resin film 1 is preferably 100 seconds or more, and particularly preferably 120 seconds or more. Further, the upper limit is preferably 600 seconds or less, and particularly preferably 500 seconds or less. Therefore, the time is most preferably 120 seconds to 500 seconds.
- the technical significance of defining the gel time of the first resin film 1 within the above range will be described.
- the heat applied for temporary connection of one semiconductor component is also conducted to the bonding site of another semiconductor component adjacent to the temporary connection. End up. Therefore, if the gel time of the first resin film is short, the curing of the first resin film proceeds at the time of temporary connection, the fluidity of the first resin film 1 decreases at the time of bonding, and the problem of poor electrode connection occurs. is there.
- the gel time is within the above range, the curing of the first resin film does not proceed at the time of temporary connection, so that it is difficult to cause poor electrode connection and a semiconductor device having excellent connection reliability can be obtained.
- the said gel time can be evaluated by measuring the time until tack disappears, for example using a hot plate set to 180 degreeC. Specifically, it can be measured according to JIS C2161 7.5.2.
- the reducibility maintenance rate of the first resin film 1 is preferably 15% or more, more preferably 30% or more, and particularly preferably 50% or more. Although there is no particular upper limit, it is practically 98% or less.
- the reducibility maintenance rate can be calculated by Equation 1 from the amount of acid measured under the following measurement conditions.
- Reducibility maintenance ratio (%) ⁇ (Amount of acid of the first resin film after heat treatment at 100 ° C. for 30 minutes) / (Amount of acid of the untreated first resin film) ⁇ ⁇ 100
- the reducibility maintenance rate is determined by, for example, measuring the acid per unit weight by titration with a 0.05 mol / l aqueous sodium hydroxide solution using an automatic potentiometer (model number: AT-500N, manufactured by Kyoto Electronics Industry Co., Ltd.). It is calculated as a molar amount of (H + ) and is calculated by introducing it into the above formula 1.
- a compound in which protons derived from the carboxyl group or phenolic hydroxyl group of the flux active compound are difficult to dissociate specifically, more than 2,4-dihydroxycarboxylic acid. It is preferable to select a compound having a high pKa value.
- the compound having flux activity for example, phenol phthaline or 2,5-dihydroxybenzoic acid can be selected.
- the first resin film have a reducibility maintenance ratio as described above, it is possible to reduce the decrease in flux activity in the temporary connection step, and it is possible to achieve good solder connection.
- a conductor layer 22 is formed on one surface side (the lower surface in FIG. 1) of the second resin film 2.
- a through hole is formed in the second resin film 2 by a laser or the like, and the through hole is filled with a conductor member 21 by plating, conductive paste or the like. Thereby, the one surface side of the 2nd resin film 2 and the other surface side can be electrically connected via the conductor member 21.
- a protruding electrode 23 formed of solder or the like is formed on the other surface (the upper surface in FIG. 1) of the second resin film so as to cover the conductor member 21.
- the second resin film 2 is made of a polyimide resin such as a polyimide resin, a polyetherimide resin, or a polyamideimide resin, a resin such as a polyamide resin, a polyester resin, or a liquid crystal polymer.
- the resin is composed of at least one resin selected from polyimide resins, polyester resins, polyamide resins, and liquid crystal polymers. Particularly preferred are polyimide resins. Thereby, heat resistance can be improved.
- a second so-called build-up material such as a resin film with a carrier is used as long as flexibility is exhibited by lamination with the first resin film 1.
- the resin film 2 may be used.
- the linear expansion coefficient in the film in-plane direction of the second resin film 2 is not particularly limited, but is preferably 15 ppm or less in the range from room temperature (23 ° C.) to the glass transition temperature of the second resin film 2 and preferably 10 ppm or less. More preferably, it is more preferably 3 ppm or more and 8 ppm or less.
- the linear expansion coefficient can be evaluated using a thermomechanical analyzer (TMA; manufactured by Seiko Instruments Inc., SS6100) under the tensile method and the temperature increase rate of 10 ° C./min.
- the thickness of the second resin film 2 is not particularly limited, but is preferably 10 ⁇ m to 200 ⁇ m, and particularly preferably 20 ⁇ m to 100 ⁇ m. When the thickness is within the above range, flexibility and workability are excellent.
- the flexible substrate 10 can be obtained by laminating and laminating the first resin film 1 and the second resin film 2.
- the thickness of the flexible substrate 10 is not particularly limited, but is preferably 30 ⁇ m to 300 ⁇ m, and particularly preferably 40 ⁇ m to 100 ⁇ m. When the thickness is within the above range, the package is excellent in thickness reduction.
- the thickness ratio (t2 / t1) between the thickness t1 of the first resin film 1 and the thickness t2 of the second resin film 2 in the flexible substrate 10 is not particularly limited, but is 0.1 to 10 is preferable, and 0.5 to 1 is particularly preferable. When the ratio of thickness is within the above range, the warp characteristics after lamination are particularly excellent.
- the relative dielectric constant (measurement frequency, 1 GHz) of the flexible substrate 10 is not particularly limited, but is preferably 2 to 5, and particularly preferably 2.5 to 4.5.
- the electrical characteristics such as improvement of the electrical signal transmission efficiency are excellent.
- the conductor layer 22 and the solder resist 24 are formed on one surface (the lower surface in FIG. 2) of the second resin film 2 so as to cover the conductor layer 22 (FIG. 2A). Note that a part of the conductor layer 22 has the solder resist 24 removed, and a pad 25 is provided in that part (FIG. 2A).
- a through hole is formed in the second resin film 2, and the through hole is filled with a conductor member 21 filled with a conductive paste (FIG. 2A). Further, a protruding electrode 23 made of solder is formed on the other surface (the upper surface in FIG. 2) of the second resin film 2 so as to cover the conductor member 21 (FIG. 2A). .
- the first resin film 1 is laminated on the side of the second resin film 2 on which the protruding electrodes 23 are formed to obtain a flexible substrate (laminated body) 10 (FIG. 2B).
- this embodiment demonstrated the case where the 2nd resin film 2 which has a through-hole was used, this invention is not limited to this, For example, the single-sided wiring board in which an electrical wiring is formed only in one side You may use for.
- the semiconductor component 3 having the protruding electrodes 31 is mounted on the surface of the first resin film 1 of the laminated body 10 by using the flip chip bonder 5 (FIG. 2C).
- the protruding electrode 23 formed on the second resin film 2 and the protruding electrode 31 of the semiconductor component 3 are brought into contact with each other and temporarily connected.
- the two semiconductor components 3 are temporarily connected.
- conditions for temporary connection are not particularly limited, but a pressure of 0.001 MPa to 3 MPa, 20 ° C. to 200 ° C. ⁇ 0.1 seconds to 120 seconds is preferable, and a pressure of 0.02 MPa to 1 MPa, 50 ° C. to 100 ° C. is particularly preferable. ⁇ 0.3 seconds to 60 seconds is preferable.
- temporary hardening can be firmly carried out without damaging the semiconductor component 3 while suppressing the hardening of the first resin film 1.
- the flexible substrate 10 to which the plurality of semiconductor components 3 are temporarily connected is heated, and the protruding electrodes 23 formed on the second resin film 2 and the protruding electrodes 31 of the semiconductor components 3 are collectively collected.
- Electrical connection is made (FIG. 2D).
- the some semiconductor component 3 and the 2nd resin film 2 are electrically connected collectively.
- the heating condition is not particularly limited as long as it can be connected to the solder. However, although it depends on the type of solder used, it is preferably 1 second to 120 seconds at a temperature higher than the melting point of the solder by 1 ° C. to 50 ° C. In particular, the temperature is preferably 5 to 15 ° C. higher than the solder melting point and preferably 5 to 60 seconds.
- the first resin film 1 is thermoset (post cure). Thereby, the adhesiveness of the semiconductor component 3 and the flexible substrate 10 can be improved, and thereby reliability can be improved.
- the first resin film 1 can function as a sealing material between the solder connection portions, and the reliability can be further improved.
- the conditions for heat curing are not particularly limited, but are preferably 100 ° C. to 200 ° C. ⁇ 10 to 180 minutes, and particularly preferably 120 ° C. to 185 ° C. ⁇ 30 minutes to 90 minutes.
- the dicing blade 6 is used to cut between the semiconductor components 3 and separate the components to obtain the semiconductor device 100 (FIGS. 3A and 3B).
- the plurality of semiconductor components 3 are stacked together.
- the present invention is not limited to this, and other components may be mounted after the main semiconductor components 3 are stacked together.
- the semiconductor device can be obtained using the flexible substrate 10 that is excellent in the formation of through holes by a laser or the like, an electronic device that can cope with the miniaturization of wiring can be obtained.
- substrate 10 is comprised with the 1st resin film of the thermosetting resin which has flux activity, it is excellent in both the outstanding solder connection property and adhesiveness. Further, since a plurality of semiconductor components can be stacked and bonded together, the productivity is excellent.
- Example 1 Production of flexible substrate As first resin film, EPICLON 840-S (Dainippon Ink Co., Ltd.) 45% by weight as epoxy resin, YX6954 (Japan Epoxy Resin Co., Ltd.) 24.9% by weight as phenoxy resin, flux 15% by weight of an active compound, phenolphthalin (manufactured by Tokyo Chemical Industry Co., Ltd.), 15% by weight of a phenol novolac resin, PR-53647 (manufactured by Sumitomo Bakelite), and 2P4MZ (2-phenyl-4), a curing accelerator -Methylimidazole (manufactured by Shikoku Kasei Co., Ltd.) 0.1% by weight premixed and applied to a polyethylene terephthalate base material, and a polyimide base material (Ube Industries, Ltd.) with a 12 ⁇ m thick copper foil Made by IUPICEL N, part number SE1310, thickness 25 ⁇ m, linear expansion coefficient 11 pp
- a semiconductor component (size 10 mm ⁇ 10 mm ⁇ 0.2 mm) having solder bumps having a height of 25 ⁇ m and a pitch of 70 ⁇ m on the surface of the first resin film of the obtained flexible substrate 4) one by one in total, 120 ° C. ⁇ 10 seconds, 0.1 MPa, and temporarily connected.
- the semiconductor component was heated at 230 ° C. for 30 seconds to perform solder connection. And this was put into oven and heated at 180 degreeC for 60 minutes, and the 1st resin film was thermosetted.
- four semiconductor devices were obtained by cutting between four semiconductor components.
- Example 2 As the first resin film, epoxy resin EPICLON 840-S (Dainippon Ink Co., Ltd.) 45% by weight, phenoxy resin YX6954 (Japan Epoxy Resin Co., Ltd.) 24.97% by weight, a compound having flux activity 15% by weight of phenol phthaline (manufactured by Tokyo Chemical Industry Co., Ltd.), 15% by weight of PR-53647 (manufactured by Sumitomo Bakelite Co., Ltd.) which is a phenol novolac resin, and 0.03% by weight of 2P4MZ (manufactured by Shikoku Kasei Co., Ltd.) which is a curing accelerator It was prepared in the same manner as in Example 1 except that the first resin film was mixed in advance and the gel time at 230 ° C. of the first resin film was 100 seconds. Moreover, the melt viscosity at 120 ° C. of the first resin film was 5 Pa ⁇ s, and the reducibility maintenance ratio was 50%.
- Example 3 Using PIBO (polyimide benzoxazole, manufactured by Toyobo Co., Ltd., linear expansion coefficient 2.5 ppm, thickness 25 ⁇ m) as the second resin film, and using a copper clad polyimide film having a two-layer structure in which a 9 ⁇ m thick copper layer is formed on PIBO The procedure was the same as in Example 1 except that.
- PIBO polyimide benzoxazole, manufactured by Toyobo Co., Ltd., linear expansion coefficient 2.5 ppm, thickness 25 ⁇ m
- the first resin film is an epoxy resin EPICLON 840-S (Dainippon Ink Co., Ltd.) 49.9% by weight, phenoxy resin YX6954 (Japan Epoxy Resin Co., Ltd.) 20% by weight, and a compound having flux activity. Phenolphthalin (Tokyo Chemical Industry Co., Ltd.) 14% by weight, phenol novolac resin PR-53647 (Sumitomo Bakelite Co., Ltd.) 16% by weight, curing accelerator 2P4MZ (Shikoku Kasei Co., Ltd.) 0.1% by weight It was prepared in the same manner as in Example 1 except that the first resin film was mixed in advance and the gel time at 230 ° C. of the first resin film was 150 seconds. Moreover, the melt viscosity at 120 ° C. of the first resin film 1 was 0.5 Pa ⁇ s, and the reduction retention ratio was 85%.
- Example 1 The same as Example 1 except that a rigid BT substrate (manufactured by Mitsubishi Gas Chemical Company, product number HL832HS-TypeHS, linear expansion coefficient 15 ppm, thickness 50 ⁇ m) was used as the second resin film. A semiconductor device having fine wiring corresponding to such solder bumps could not be made.
- a rigid BT substrate manufactured by Mitsubishi Gas Chemical Company, product number HL832HS-TypeHS, linear expansion coefficient 15 ppm, thickness 50 ⁇ m
- Example 1 was the same as Example 1 except that the following was used as the first resin film having no flux activity. 15.
- First resin film does not contain phenolphthalin, EPICLON 840-S (Dainippon Ink Co., Ltd.) 55 wt%, YX6954 (Japan Epoxy Resin Co., Ltd.) 30 wt%, PR-53647 (Sumitomo Bakelite Co., Ltd.) 9% by weight, 2P4MZ (manufactured by Shikoku Kasei Co., Ltd.) 0.1% by weight was mixed in advance and used.
- the gel time of the first resin film at 230 ° C. was 140 seconds, and the melt viscosity at 120 ° C. was 30 Pa ⁇ s.
- Example 2 was the same as Example 1 except that only the second resin film and the semiconductor component were connected using an underfill (manufactured by Sumitomo Bakelite Co., Ltd., product number CRP-4160E). However, underfill injection was insufficient because the gap between the semiconductor component and the flexible substrate was narrow.
- underfill manufactured by Sumitomo Bakelite Co., Ltd., product number CRP-4160E.
- Connectivity The connectivity was evaluated by cross-sectional polishing of the connected package, and NG judgment was made for one having bumps in which at least one connection failure occurred. Four packages were evaluated and evaluated by the number at which no connection failure occurred.
- Reflow resistance The reflow resistance was evaluated by an ultrasonic flaw detection device after the moisture absorption at 30 ° C., 60% for 96 hours, and after passing through the reflow at a maximum temperature of 260 ° C. three times. Four packages were evaluated and evaluated by the number at which no peeling occurred.
- Temperature cycle resistance The temperature cycle resistance is -40 ° C, 125 ° C (hold for 30 minutes), the connection resistance after 500 cycles of the temperature cycle test is monitored, and it is 15% higher than the initial resistance value. Evaluated as more than resistance. Four packages were evaluated, and the number of initial resistance values was not increased by 15%.
- Productivity was evaluated by estimating the process steps and time required from the preparation of each member to the production of the package. Each code is as follows. ⁇ : Productivity was good. X: Productivity was low.
- the melt viscosity of the adhesive film was measured using a viscoelasticity measuring device (“RheoStress RS150” manufactured by HAAKE), parallel plate 20 mm ⁇ , gap 0.05 mm, frequency 0.1 Hz, temperature rise. The measurement was carried out at a rate of 10 ° C./min, and the melt viscosity at 120 ° C. was taken as the measured value.
- Reducing rate maintenance ratio of the first resin film 0.1 to 0.2 g of each of the first resin film subjected to the heat treatment at 100 ° C. for 30 minutes and the untreated first resin film were precisely weighed, and then 100 ml of acetone.
- a measurement sample was prepared by dissolving it in the sample.
- titration was performed with a 0.05 mol / l aqueous sodium hydroxide solution at room temperature (23 ° C.) using a potentiometric automatic measuring device (manufactured by Kyoto Electronics Industry Co., Ltd., model number: AT-500N). The molar amount of acid (reducibility, unit: mol / g) was calculated.
- Reducibility maintenance rate was calculated by the following formula 1.
- Reducibility maintenance ratio (%) ⁇ (Amount of acid of first resin film after heat treatment at 100 ° C. for 30 minutes) / (Amount of acid of untreated first resin film) ⁇ ⁇ 100
- Examples 1 to 4 were able to form fine wiring and were excellent in connectivity. In addition, Examples 1 to 4 were excellent in reflow resistance and temperature cycle resistance. In addition, Examples 1 to 4 were excellent in productivity. In Comparative Example 4 in which the gel time at 230 ° C. of the first resin film was 60 seconds, the individual piece connectivity was good, but the four piece collective connectivity was bad. Further, Comparative Example 5 in which the first resin film had a reducibility maintenance rate of 10% also had good individual piece connectivity, but poor four piece collective connectivity.
Abstract
Description
また、本発明の別の目的は、配線の微細化に対応可能な電子機器を歩留まりよく提供することにある。
(1) フラックス活性を有する第1樹脂フィルムと、前記第1樹脂フィルムに積層された、前記第1樹脂フィルムと異なる第2樹脂フィルムと、を有し、前記第1樹脂フィルムの表面に複数の電子部品を搭載した後、一括で前記各電子部品に接合して用いられ、前記第1樹脂フィルムの230℃におけるゲルタイムが、100秒以上600秒以下であることを特徴とする可撓性基板。
(2) 以下の測定条件で測定される酸の量から式1により算出される前記第1樹脂フィルムの還元性維持率が15%以上であることを特徴とする(1)の可撓性基板。
[測定条件]
100℃、30分の熱処理を加えた前記第1樹脂フィルム及び未処理の前記第1樹脂フィルムをそれぞれ、0.1g~0.2g精秤し、100mlのアセトンに溶解させ、電位差測定法により、水酸化ナトリウム水溶液で滴定を行い単位重量あたりの酸のモル量(mol/g)を算出する。
[式1]還元性維持率(%)={(100℃、30分熱処理後の前記第1樹脂フィルムの酸の量)/(未処理の前記第1樹脂フィルムの酸の量)}×100
(3) 前記第1樹脂フィルムは、熱硬化性樹脂と、フラックス活性を有する化合物とを含む樹脂組成物で構成されている(1)又は(2)の可撓性基板。
(4) 前記第1樹脂フィルムがフェノールフタリンを含む、(1)~(3)のいずれかの可撓性基板。
(5) 前記第1樹脂フィルムの120℃での溶融粘度は、0.1Pa・s~10,000Pa・sである(1)~(4)のいずれかの可撓性基板。
(6) 前記第1樹脂フィルムの120℃での溶融粘度は、1Pa・s~10,000Pa・sである(1)~(5)のいずれかの可撓性基板。
(7) 前記第2樹脂フィルムは、貫通孔を有しており、前記貫通孔には導体部材が充填されているものである(1)~(6)のいずれかの可撓性基板。
(8) 前記第2樹脂フィルムの一方の面側には導体層が形成されており、他方側の面には導体部材を覆うように突起電極が形成されているものである(1)~(7)のいずれかの可撓性基板。
(9) 前記第2樹脂フィルムは、ポリイミド系樹脂、ポリエステル系樹脂、ポリアミド系樹脂および液晶ポリマーの中の少なくとも1種の樹脂で構成されているものである(1)~(8)のいずれかに記載の可撓性基板。
(10) 室温(23℃)以上前記第2樹脂フィルムのガラス転移温度以下における前記第2樹脂フィルムの線膨張係数が、15ppm以下である(1)~(9)のいずれかの可撓性基板。
(11) 室温(23℃)以上前記第2樹脂フィルムのガラス転移温度以下における前記第2の樹脂フィルムの線膨張係数が3ppm以上8ppm以下である(1)~(10)のいずれかの可撓性基板。
(12) (1)~(11)のいずれかの可撓性基板を有することを特徴とする電子機器。
(13) フラックス活性を有する第1樹脂フィルムと、前記第1樹脂フィルムと異なる第2樹脂フィルムとを積層してなる可撓性基板の前記第1樹脂フィルムの表面に複数の電子部品を搭載した後、一括で前記各電子部品と前記可撓性基板とを接合する工程と、接合する前記工程の後に前記複数の電子部品を前記可撓性基板とともに個片化する工程と、を含み、前記可撓性基板が(1)~(11)のいずれかの可撓性基板である、電子機器の製造方法。
また、本発明によれば配線が微細化された電子機器を歩留まりよく得ることができる。
本発明の可撓性基板は、フラックス活性を有する第1樹脂フィルムと、前記第1樹脂フィルムと異なる第2樹脂フィルムとを積層してなる可撓性基板であって、
前記第1樹脂フィルムの表面に複数の電子部品を搭載した後、一括で前記各電子部品と前記可撓性基板とを接合して用いることを特徴とする。
第1樹脂フィルムの230℃におけるゲルタイムが、100秒以上600秒以下である。
また、本発明の電子機器は、上記に記載の可撓性基板を有することを特徴とする。
図1は、可撓性基板の一例を示す断面図である。
図1に示すように、可撓性基板10は、フラックス活性を有する第1樹脂フィルム1と、第1樹脂フィルム1と異なる第2樹脂フィルム2との積層体となっている。
第2樹脂フィルム2には、貫通孔(不図示)が形成されており、この貫通孔には導体部材21が充填されている。
また、第2樹脂フィルム2の一方の面側(図1中の下側の面)には、導体層22が形成されている。
また、第2樹脂フィルム2の他方側の面(図1中の上側の面)には、導体部材21を覆うように突起電極23が形成されている。
第1樹脂フィルム1は、突起電極23を覆うように第2樹脂フィルム2に積層されている。
このような第1樹脂フィルムは、例えば熱可塑性樹脂とフラックス活性を有する樹脂とを含む樹脂組成物、熱硬化性樹脂と、フラックス活性を有する化合物と、成膜性樹脂とを含む樹脂組成物等で構成されている。これらの中でも熱硬化性樹脂と、フラックス活性を有する化合物と、成膜性樹脂とを含む樹脂組成物で構成されることが好ましい。これにより、半田リフロー等熱処理に対しての耐熱性に優れる。
前記熱硬化性樹脂としては、例えばエポキシ樹脂、オキセタン樹脂、フェノール樹脂、(メタ)アクリレート樹脂、不飽和ポリエステル樹脂、ジアリルフタレート樹脂、マレイミド樹脂等が挙げられ、これらの中でも、エポキシ樹脂を用いるのが好ましい。エポキシ樹脂は、硬化性と保存性、硬化物の耐熱性、耐湿性、耐薬品性等に優れることから、熱硬化性樹脂として好適に用いられる。
前記フラックス活性化合物としては、例えばフェノール性水酸基、カルボキシル基を含む化合物などが挙げられる。
前記フェノール性水酸基含有化合物としては、例えばフェノール、o-クレゾール、2,6-キシレノール、p-クレゾール、m-クレゾール、o-エチルフェノール、2,4-キシレノール、2,5キシレノール、m-エチルフェノール、2,3-キシレノール、メジトール、3,5-キシレノール、p-ターシャリブチルフェノール、カテコール、p-ターシャリアミルフェノール、レゾルシノール、p-オクチルフェノール、p-フェニルフェノール、ビスフェノールA、ビスフェノールF、ビスフェノールAF、ビフェノール、ジアリルビスフェノールF、ジアリルビスフェノールA、トリスフェノール、テトラキスフェノール等のフェノール性水酸基を含有するモノマー類、フェノールノボラック樹脂、o-クレゾールノボラック樹脂、ビスフェノールFノボラック樹脂、ビスフェノールAノボラック樹脂等が挙げられる。
ここで、脂肪族酸無水物としては、無水コハク酸、ポリアジピン酸無水物、ポリアゼライン酸無水物、ポリセバシン酸無水物等が挙げられる。
脂環式酸無水物としては、メチルテトラヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸、無水メチルハイミック酸、ヘキサヒドロ無水フタル酸、テトラヒドロ無水フタル酸、トリアルキルテトラヒドロ無水フタル酸、メチルシクロヘキセンジカルボン酸無水物等が挙げられる。
芳香族酸無水物としては、無水フタル酸、無水トリメリット酸、無水ピロメリット酸、ベンゾフェノンテトラカルボン酸無水物、エチレングリコールビストリメリテート、グリセロールトリストリメリテート等が挙げられる。
このようにフラックス活性を有する硬化剤は、半田接続する際は半田バンプ表面の酸化膜を、導体部材と電気的に接合できる程度に還元する作用を示し、その後の硬化反応に樹脂骨格中に取り込まれることになる。したがって、フラックス洗浄の工程を省略することができる。
また、フラックス活性を有する化合物としては上述したものと同様のものを用いることができる。
なお、前記溶融粘度は、例えばレオメーター(Haake社製)を用いて、昇温速度10℃/minで評価することができる。
100℃、30分の熱処理を加えた前記第1樹脂フィルム及び未処理の前記第1樹脂フィルムをそれぞれ、0.1g~0.2g精秤し、100mlのアセトンに溶解させ、電位差測定法により、水酸化ナトリウム水溶液で滴定を行い単位重量あたりの酸のモル量(mol/g)を算出する。
第2樹脂フィルム2の一方の面側(図1中の下側の面)には、導体層22が形成されている。
第2樹脂フィルム2には、レーザー等により貫通孔が形成され、その貫通孔にはめっき、導電性ペースト等で導体部材21が充填されている。これにより、第2樹脂フィルム2の一方の面側と、他方の面側とを導体部材21を介して電気的に接続することができる。
また、第2樹脂フィルムの他方側の面(図1中の上側の面)には、導体部材21を覆うように半田等で形成された突起電極23が形成されている。
なお、線膨張係数は、熱機械分析装置(TMA;セイコーインスツルメンツ(株)社製、SS6100)を用いて引っ張り法、昇温速度10℃/minの条件で評価することができる。
可撓性基板10の厚さも特に限定されないが、30μm~300μmであることが好ましく、特に40μm~100μmであることが好ましい。厚さが前記範囲内であると、パッケージの薄型化に優れる。
次に、電子部品の一例として半導体装置の製造方法について、図2、3に基づく好適な実施形態に基づいて説明する。なお、以下の説明および図面中、同一又は相当する要素には同一の符号を付し、重複する説明は省略する。
まず、第2樹脂フィルム2の一方の面(図2中の下側の面)に導体層22と、導体層22を覆うようにソルダーレジスト24が形成されている(図2(a))。
なお、導体層22の一部は、ソルダーレジスト24が除去されており、その部分にはパッド25が設けられている(図2(a))。
第2樹脂フィルム2には、貫通孔が形成され、その貫通孔には導電性ペーストが充填されてなる導体部材21が充填されている(図2(a))。
また、第2樹脂フィルム2の他方の面(図2中の上側の面)には、導体部材21を覆うように半田で形成された突起電極23が形成されている(図2(a))。
この第2樹脂フィルム2の突起電極23が形成されている側に、第1樹脂フィルム1をラミネートして可撓性基板(積層体)10を得る(図2(b))。
なお、本実施形態では、貫通孔を有する第2樹脂フィルム2を用いた場合について説明したが、本発明はこれに限定されず、例えば電気配線が片面のみに形成されているような片面配線基板に用いても良い。
ここで、仮接続する条件は、特に限定されないが、圧力0.001MPa~3MPa、20℃~200℃×0.1秒間~120秒間が好ましく、特に圧力0.02MPa~1MPa、50℃~100℃×0.3秒間~60秒間が好ましい。これにより、第1樹脂フィルム1の硬化を抑制しつつ、半導体部品3にもダメージを与えずにしっかりと仮接着することができる。
この加熱条件は、半田接続できる条件であれば特に限定されないが、使用される半田の種類にもよるが、実温で半田融点よりも1℃~50℃高い温度で1秒間~120秒間が好ましく、特に半田融点よりも5℃~15℃高い温度で5秒間~60秒間が好ましい。
熱硬化させる条件は、特に限定されないが、100℃~200℃×10~180分間が好ましく、特に120℃~185℃×30分間~90分間が好ましい。
なお、本実施形態では、複数の半導体部品3を一括で積層したが、本発明はこれに限定されず、主要な半導体部品3を一括で積層した後に、他の部品を搭載しても良い。
また、可撓性基板10は、フラックス活性を有する熱硬化性樹脂の第1樹脂フィルムで構成されているため、優れた半田接続性と、接着性との両方に優れている。
また、複数の半導体部品を積層して一括で接合できるので生産性に優れる。
1.可撓性基板の製造
第1樹脂フィルムとして、エポキシ樹脂であるEPICLON 840-S(大日本インキ社製)45重量%、フェノキシ樹脂であるYX6954(ジャパンエポキシレジン社製)24.9重量%、フラックス活性を有する化合物であるフェノールフタリン(東京化成工業社製)15重量%、フェノールノボラック樹脂であるPR-53647(住友ベークライト社製)15重量%、硬化促進剤である2P4MZ(2-フェニル-4-メチルイミダゾール、四国化成社製)0.1重量%をあらかじめ混合させ、ポリエチレンテレフタレート基材に塗布して得られたものと、12μm厚銅箔を第2樹脂フィルムであるポリイミド基材(宇部興産社製、ユピセルN、品番SE1310、厚さ25μm、線膨張係数11ppm)に熱融着させた2層構成の銅張りポリイミドフィルムとを真空ラミネーターを用いて、120℃、圧力2kg/cm2、ラミネーション速度0.3m/分の条件でラミネートして可撓性基板(厚さ70μm)を得た。なお、第1樹脂フィルムの230℃でのゲルタイムは140秒、120℃での溶融粘度は50Pa・sであり、還元性維持率は90%であった。
得られた可撓性基板の第1樹脂フィルムの表面に、高さが25μm、ピッチが70μmの半田バンプを有する半導体部品(サイズ10mm×10mm×0.2mm)を1個ずつ計4個、120℃×10秒、0.1MPaの条件で搭載して仮接続した。次に、半導体部品を230℃で30秒間加熱して、半田接続を行った。そして、これをオーブンに投入し180℃で60分間加熱して、第1樹脂フィルムを熱硬化した。最後に、4個の半導体部品の間で切断して、4個の半導体装置を得た。
得られた第1樹脂フィルム付き可撓性基板を4個に切断(個片化)し、次いで、第1樹脂フィルムの表面に、高さが25μm、ピッチが70μmの半田バンプを有する半導体部品(サイズ10mm×10mm×0.2mm)を、それぞれ120℃×10秒、0.1MPaの条件で搭載して仮接続した。次に、第1樹脂フィルムの表面に半導体部品が仮接続された可撓性基板を、それぞれ230℃で30秒間加熱して、半田接続を行った。そして、半導体部品が半田接続された可撓性基板を180℃で60分間加熱して、第1樹脂フィルムを熱硬化し、4個の半導体装置を得た。
第1樹脂フィルムとして、エポキシ樹脂であるEPICLON 840-S(大日本インキ社製)45重量%、フェノキシ樹脂であるYX6954(ジャパンエポキシレジン社製)24.97重量%、フラックス活性を有する化合物であるフェノールフタリン(東京化成工業社製)15重量%、フェノールノボラック樹脂であるPR-53647(住友ベークライト社製)15重量%、硬化促進剤である2P4MZ(四国化成社製)0.03重量%をあらかじめ混合させ、第1樹脂フィルムの230℃でのゲルタイムが100秒とした以外は、実施例1と同様に作成した。また、第1樹脂フィルムの120℃における溶融粘度は5Pa・sであり、還元性維持率は50%であった。
第2樹脂フィルムとしてPIBO(ポリイミドベンズオキサゾール、東洋紡社製、線膨張係数2.5ppm、厚さ25μm)を用い、PIBO上に9μm厚の銅層を形成した2層構成の銅張りポリイミドフィルムを用いた以外は、実施例1と同様にした。
第1樹脂フィルムとして、エポキシ樹脂であるEPICLON 840-S(大日本インキ社製)49.9重量%、フェノキシ樹脂であるYX6954(ジャパンエポキシレジン社製)20重量%、フラックス活性を有する化合物であるフェノールフタリン(東京化成工業社製)14重量%、フェノールノボラック樹脂であるPR-53647(住友ベークライト社製)16重量%、硬化促進剤である2P4MZ(四国化成社製)0.1重量%をあらかじめ混合させ、第1樹脂フィルムの230℃でのゲルタイムが150秒とした以外は、実施例1と同様に作製した。また、第1樹脂フィルム1の120℃における溶融粘度は0.5Pa・sであり、還元性維持率は85%であった。
第2樹脂フィルムとしてリジットな基板であるBT基板(三菱ガス化学社製、品番HL832HS-TypeHS、線膨張係数15ppm、厚さ50μm)を用いた以外は、実施例1と同様にしたが、上述するような半田バンプに対応する微細な配線を有する半導体装置ができなかった。
フラックス活性を有さない第1樹脂フィルムとして以下のものを用いた以外は、実施例1と同様にした。
第1樹脂フィルムがフェノールフタリンを含まず、EPICLON 840-S(大日本インキ社製)55重量%、YX6954(ジャパンエポキシレジン社製)30重量%、PR-53647(住友ベークライト社製)14.9重量%、2P4MZ(四国化成社製)0.1重量%をあらかじめ混合して用いた。第1樹脂フィルムの230℃のゲルタイムは140秒、120℃における溶融粘度は30Pa・sであった。
第2樹脂フィルムのみと、半導体部品とを、アンダーフィル(住友ベークライト社製、品番CRP-4160E)を用いて接続した以外は、実施例1と同様にした。ただ、半導体部品と可撓性基板との間のギャップが狭いためアンダーフィルの注入が不十分であった。
第1樹脂フィルムとして、エポキシ樹脂 EPICLON 840-S(大日本インキ社製)45重量%、フェノキシ樹脂 YX6954(ジャパンエポキシレジン社製)24.9重量%、フラックス活性を有する化合物 フェノールフタリン(東京化成工業社製)15重量%、フェノールノボラック樹脂PR-53647(住友ベークライト社製)15重量%、イミダゾール化合物2MZ(四国化成社製)0.1重量%をあらかじめ混合させ、第1樹脂フィルムの230℃でのゲルタイムが60秒とした以外は、実施例1と同様に作製した。また、第1樹脂フィルムの120℃における溶融粘度は5Pa・sであり、還元性維持率は80%であった。
第1樹脂フィルムとして、エポキシ樹脂 EPICLON 840-S(大日本インキ社製)54.9重量%、フェノキシ樹脂 YX6954(ジャパンエポキシレジン社製)24重量%、フラックス活性を有する化合物 2,4-ジヒドロキシ安息香酸(東京化成工業社製)5重量%、フェノールノボラック樹脂 PR-53647(住友ベークライト社製)16重量%、イミダゾール化合物 2P4MZ(四国化成社製)0.1重量%をあらかじめ混合させ、第1樹脂フィルムの230℃のゲルタイムが120秒とした以外は、実施例1と同様に作製した。また、第1樹脂フィルムの120℃における溶融粘度は5Pa・sであり、還元性維持率は10%であった。
接続性は、接続させたパッケージを断面研磨で評価し、一つでも接続不良が発生しているバンプを有するものはNG判定とした。4個のパッケージを評価して接続不良が発生していない数で評価した。
耐リフロー性は、30℃、60%、96時間吸湿させたあと最大温度260℃のリフローに3回通過させた後の剥離の有無を超音波探傷探査装置で評価した。4個のパッケージを評価して剥離が発生していない数で評価した。
耐温度サイクル性は、-40℃,125℃(30分ホールド)の条件で、温度サイクル試験を500サイクルした後の接続抵抗をモニターし、初期抵抗値より15%上昇したものを抵抗以上として評価した。4個のパッケージを評価して初期抵抗値が15%上昇していない数で評価した。
各部材準備からパッケージ作製までにかかるプロセスステップおよび時間を概算して生産性を評価した。各符号は、以下の通りである。
○:生産性が良好であった。
×:生産性が低かった。
接着フィルムの溶融粘度は、粘弾性測定装置(HAAKE社製「RheoStress RS150」)を用いて、パラレルプレート20mmφ、ギャップ0.05mm、周波数0.1Hz、昇温速度10℃/分の条件で測定し、120℃における溶融粘度を測定値とした。
100℃、30分の熱処理を加えた第1樹脂フィルム及び未処理の第1樹脂フィルムをそれぞれ、0.1~0.2g精秤し、次いで、100mlのアセトンに溶解させ測定試料を作製した。次いで、電位差自動測定装置(京都電子工業(株)製、型番:AT-500N)を用い、室温(23℃)雰囲気下で0.05mol/lの水酸化ナトリウム水溶液で滴定を行い単位重量あたりの酸のモル量(還元性、単位:mol/g)を算出した。
また、還元性維持率は、以下の式1により算出した。
(式1)還元性維持率(%)={(100℃、30分熱処理後の第1樹脂フィルムの酸の量)/(未処理の第1樹脂フィルムの酸の量)}×100
JIS C2161 7.5.2に準拠して測定した。
また、実施例1~4は、耐リフロー性および耐温度サイクル性にも優れていた。
また、実施例1~4は、生産性にも優れていた。
また、第1樹脂フィルムの230℃のゲルタイムが60秒である比較例4は、個片接続性は良好であったが、4個一括接続性は悪かった。さらに第1樹脂フィルムの還元性維持率が10%である比較例5も、個片接続性は良好であったが、4個一括接続性は悪かった。
Claims (13)
- フラックス活性を有する第1樹脂フィルムと、
前記第1樹脂フィルムに積層された、前記第1樹脂フィルムと異なる第2樹脂フィルムと、
を有し、
前記第1樹脂フィルムの表面に複数の電子部品を搭載した後、一括で前記各電子部品に接合して用いられ、
前記第1樹脂フィルムの230℃におけるゲルタイムが、100秒以上600秒以下であることを特徴とする可撓性基板。 - 以下の測定条件で測定される酸の量から式1により算出される前記第1樹脂フィルムの還元性維持率が15%以上であることを特徴とする請求項1に記載の可撓性基板。
[測定条件]
100℃、30分の熱処理を加えた前記第1樹脂フィルム及び未処理の前記第1樹脂フィルムをそれぞれ、0.1g~0.2g精秤し、100mlのアセトンに溶解させ、電位差測定法により、水酸化ナトリウム水溶液で滴定を行い単位重量あたりの酸のモル量(mol/g)を算出する。
[式1]還元性維持率(%)={(100℃、30分熱処理後の前記第1樹脂フィルムの酸の量)/(未処理の前記第1樹脂フィルムの酸の量)}×100 - 前記第1樹脂フィルムは、熱硬化性樹脂と、フラックス活性を有する化合物とを含む樹脂組成物で構成されている請求項1又は2に記載の可撓性基板。
- 前記第1樹脂フィルムがフェノールフタリンを含む、請求項1ないし3のいずれかに記載の可撓性基板。
- 前記第1樹脂フィルムの120℃での溶融粘度は、0.1Pa・s~10,000Pa・sである請求項1ないし4のいずれかに記載の可撓性基板。
- 前記第1樹脂フィルムの120℃での溶融粘度は、1Pa・s~10,000Pa・sである請求項1ないし5のいずれかに記載の可撓性基板。
- 前記第2樹脂フィルムは、貫通孔を有しており、前記貫通孔には導体部材が充填されているものである請求項1ないし6のいずれかに記載の可撓性基板。
- 前記第2樹脂フィルムの一方の面側には導体層が形成されており、他方側の面には導体部材を覆うように突起電極が形成されているものである請求項1ないし7のいずれかに記載の可撓性基板。
- 前記第2樹脂フィルムは、ポリイミド系樹脂、ポリエステル系樹脂、ポリアミド系樹脂および液晶ポリマーの中の少なくとも1種の樹脂で構成されているものである請求項1ないし8のいずれかに記載の可撓性基板。
- 室温(23℃)以上前記第2樹脂フィルムのガラス転移温度以下における前記第2樹脂フィルムの線膨張係数が、15ppm以下である請求項1ないし9のいずれかに記載の可撓性基板。
- 室温(23℃)以上前記第2樹脂フィルムのガラス転移温度以下における前記第2の樹脂フィルムの線膨張係数が3ppm以上8ppm以下である請求項1ないし10のいずれかに記載の可撓性基板。
- 請求項1ないし11のいずれかに記載の可撓性基板を有することを特徴とする電子機器。
- フラックス活性を有する第1樹脂フィルムと、前記第1樹脂フィルムと異なる第2樹脂フィルムとを積層してなる可撓性基板の前記第1樹脂フィルムの表面に複数の電子部品を搭載した後、一括で前記各電子部品と前記可撓性基板とを接合する工程と、
接合する前記工程の後に前記複数の電子部品を前記可撓性基板とともに個片化する工程と、
を含み、
前記可撓性基板が請求項1ないし11のいずれかに記載の可撓性基板である、電子機器の製造方法。
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CA2748245A CA2748245A1 (en) | 2008-12-26 | 2009-12-22 | Flexible substrate and electronic device |
EP09834446A EP2375879A1 (en) | 2008-12-26 | 2009-12-22 | Flexible substrate and electronic device |
US13/142,056 US20110262697A1 (en) | 2008-12-26 | 2009-12-22 | Flexible substrate and electronic device |
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WO2013052418A1 (en) * | 2011-10-05 | 2013-04-11 | Harris Corporation | Method for making electrical structure with air dielectric and related electrical structures |
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WO2013047873A1 (ja) * | 2011-09-29 | 2013-04-04 | 日産化学工業株式会社 | ディスプレイ基板用樹脂組成物 |
JP5673496B2 (ja) * | 2011-11-07 | 2015-02-18 | 信越化学工業株式会社 | 樹脂組成物、樹脂フィルム及び半導体装置とその製造方法 |
JP2017139343A (ja) * | 2016-02-04 | 2017-08-10 | 株式会社ディスコ | パッケージ基板の加工方法 |
KR20190000792A (ko) * | 2017-06-23 | 2019-01-03 | 미쓰보시 다이야몬도 고교 가부시키가이샤 | 커터 휠 및 다층기판의 절단 방법 |
JP2019009244A (ja) * | 2017-06-23 | 2019-01-17 | 三星ダイヤモンド工業株式会社 | 多層基板の分断方法 |
CN114531791B (zh) * | 2022-03-04 | 2023-04-14 | 深圳市晶世界透明显示技术股份有限公司 | Led固晶透明显示屏的制作方法、存储介质以及电子设备 |
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JP5569582B2 (ja) | 2014-08-13 |
CN102265715A (zh) | 2011-11-30 |
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TW201034144A (en) | 2010-09-16 |
SG172375A1 (en) | 2011-07-28 |
JP5482666B2 (ja) | 2014-05-07 |
JP2013093598A (ja) | 2013-05-16 |
US20110262697A1 (en) | 2011-10-27 |
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CA2748245A1 (en) | 2010-07-01 |
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