WO2010064848A3 - 3족 질화물 반도체 발광소자 - Google Patents

3족 질화물 반도체 발광소자 Download PDF

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Publication number
WO2010064848A3
WO2010064848A3 PCT/KR2009/007169 KR2009007169W WO2010064848A3 WO 2010064848 A3 WO2010064848 A3 WO 2010064848A3 KR 2009007169 W KR2009007169 W KR 2009007169W WO 2010064848 A3 WO2010064848 A3 WO 2010064848A3
Authority
WO
WIPO (PCT)
Prior art keywords
nitride semiconductor
group iii
iii nitride
emitting device
semiconductor light
Prior art date
Application number
PCT/KR2009/007169
Other languages
English (en)
French (fr)
Other versions
WO2010064848A2 (ko
Inventor
김창태
안현수
김현석
Original Assignee
주식회사 에피밸리
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 에피밸리 filed Critical 주식회사 에피밸리
Priority to JP2011539449A priority Critical patent/JP2012510724A/ja
Priority to CN200980148569XA priority patent/CN102239575A/zh
Priority to US12/648,707 priority patent/US8101965B2/en
Publication of WO2010064848A2 publication Critical patent/WO2010064848A2/ko
Publication of WO2010064848A3 publication Critical patent/WO2010064848A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

본 개시는 3족 질화물 반도체 발광소자에 관한 것으로, 보다 상세하게는 제1 전도성을 지니는 제1 3족 질화물 반도체층, 제1 전도성과 다른 제2 전도성을 지니는 제2 3족 질화물 반도체층, 제1 3족 질화물 반도체층과 제2 3족 질화물 반도체층 사이에 위치하여 전자와 정공의 재결합에 의해 빛을 생성하는 활성층을 구비하는 복수개의 3족 질화물 반도체층; 복수개의 3족 질화물 반도체층과 전기적으로 연결되는 본딩 패드; 본딩 패드 위에 위치하는 보호막; 그리고, 본딩 패드와 보호막 사이에 위치하며, 본딩 패드가 노출되도록 형성되는 버퍼 패드;를 포함하는 것을 특징으로 하는 3족 질화물 반도체 발광소자에 관한 것이다.
PCT/KR2009/007169 2008-12-02 2009-12-02 3족 질화물 반도체 발광소자 WO2010064848A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011539449A JP2012510724A (ja) 2008-12-02 2009-12-02 ３族窒化物半導体発光素子
CN200980148569XA CN102239575A (zh) 2008-12-02 2009-12-02 Ⅲ族氮化物半导体发光器件
US12/648,707 US8101965B2 (en) 2008-12-02 2009-12-29 III-nitride semiconductor light emitting device having a multilayered pad

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0121156 2008-12-02
KR20080121156A KR100960280B1 (ko) 2008-12-02 2008-12-02 3족 질화물 반도체 발광소자

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/648,707 Continuation US8101965B2 (en) 2008-12-02 2009-12-29 III-nitride semiconductor light emitting device having a multilayered pad

Publications (2)

Publication Number Publication Date
WO2010064848A2 WO2010064848A2 (ko) 2010-06-10
WO2010064848A3 true WO2010064848A3 (ko) 2010-08-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/007169 WO2010064848A2 (ko) 2008-12-02 2009-12-02 3족 질화물 반도체 발광소자

Country Status (4)

Country Link
JP (1) JP2012510724A (ko)
KR (1) KR100960280B1 (ko)
CN (1) CN102239575A (ko)
WO (1) WO2010064848A2 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014165337A (ja) 2013-02-25 2014-09-08 Rohm Co Ltd 発光素子、発光素子パッケージおよび発光素子の製造方法
CN103367590A (zh) * 2013-07-08 2013-10-23 安徽三安光电有限公司 一种氮化镓基发光二极管及其制作方法
CN106415859B (zh) * 2014-06-03 2018-09-25 世迈克琉明有限公司 半导体发光元件及其制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060018988A (ko) * 2004-08-26 2006-03-03 에피밸리 주식회사 Ⅲ-질화물 반도체 발광소자
JP2006135313A (ja) * 2004-11-03 2006-05-25 Shogen Koden Kofun Yugenkoshi 発光ダイオード
JP2008171884A (ja) * 2007-01-09 2008-07-24 Toyota Central R&D Labs Inc 電極の形成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3026087B2 (ja) * 1989-03-01 2000-03-27 豊田合成株式会社 窒化ガリウム系化合物半導体の気相成長方法
CA2037198C (en) * 1990-02-28 1996-04-23 Katsuhide Manabe Light-emitting semiconductor device using gallium nitride group compound
US5290393A (en) * 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
JP3255281B2 (ja) * 1997-11-14 2002-02-12 日亜化学工業株式会社 窒化物半導体素子
JP2001053336A (ja) * 1999-08-05 2001-02-23 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2002314131A (ja) * 2001-04-10 2002-10-25 Showa Denko Kk 透光性電極及びその製造方法並びにそれを用いたｉｉｉ族窒化物半導体発光素子
KR100448352B1 (ko) * 2003-11-28 2004-09-10 삼성전기주식회사 ＧａＮ 기반 질화막의 형성방법
US7803648B2 (en) * 2005-03-09 2010-09-28 Showa Denko K.K. Nitride semiconductor light-emitting device and method for fabrication thereof
JP4947954B2 (ja) * 2005-10-31 2012-06-06 スタンレー電気株式会社 発光素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060018988A (ko) * 2004-08-26 2006-03-03 에피밸리 주식회사 Ⅲ-질화물 반도체 발광소자
JP2006135313A (ja) * 2004-11-03 2006-05-25 Shogen Koden Kofun Yugenkoshi 発光ダイオード
JP2008171884A (ja) * 2007-01-09 2008-07-24 Toyota Central R&D Labs Inc 電極の形成方法

Also Published As

Publication number Publication date
CN102239575A (zh) 2011-11-09
WO2010064848A2 (ko) 2010-06-10
KR100960280B1 (ko) 2010-06-04
JP2012510724A (ja) 2012-05-10

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