WO2010032852A1 - Dispositif d'irradiation de lumière ultraviolette - Google Patents

Dispositif d'irradiation de lumière ultraviolette Download PDF

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Publication number
WO2010032852A1
WO2010032852A1 PCT/JP2009/066452 JP2009066452W WO2010032852A1 WO 2010032852 A1 WO2010032852 A1 WO 2010032852A1 JP 2009066452 W JP2009066452 W JP 2009066452W WO 2010032852 A1 WO2010032852 A1 WO 2010032852A1
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WO
WIPO (PCT)
Prior art keywords
discharge lamp
gas
irradiation device
glass substrate
discharge
Prior art date
Application number
PCT/JP2009/066452
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English (en)
Japanese (ja)
Inventor
和則 広井
和也 畑瀬
Original Assignee
株式会社ジーエス・ユアサコーポレーション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社ジーエス・ユアサコーポレーション filed Critical 株式会社ジーエス・ユアサコーポレーション
Priority to JP2010529827A priority Critical patent/JP5534344B2/ja
Priority to CN200980132822.2A priority patent/CN102132384B/zh
Priority to KR1020107027778A priority patent/KR101660477B1/ko
Publication of WO2010032852A1 publication Critical patent/WO2010032852A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/002—Other surface treatment of glass not in the form of fibres or filaments by irradiation by ultraviolet light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like

Definitions

  • the present invention relates to an ultraviolet irradiation apparatus provided with a discharge lamp for irradiating ultraviolet rays toward a processing object and a gas supply means for supplying gas to a space between the discharge lamp and the processing object.
  • Such an ultraviolet irradiation apparatus is an apparatus that performs processing such as cleaning of an object to be processed by irradiating the object to be processed with ultraviolet light having a short wavelength such as 172 nm.
  • ultraviolet light having a short wavelength such as 172 nm.
  • ultraviolet rays exist in the atmosphere, such ultraviolet rays are absorbed by the oxygen and significantly attenuated.
  • Patent Document 1 it is conventional to suppress the attenuation of ultraviolet rays by supplying an inert gas such as nitrogen gas to the space between the discharge lamp that emits ultraviolet rays and the object to be processed. It is made from.
  • the discharge lamp and the processing object positioned below the discharge lamp are arranged above the discharge lamp.
  • the inert gas is not simply supplied through the down flow.
  • a diffusion plate for diffusing an inert gas is arranged between the discharge lamp and the discharge lamp so that the inert gas flows uniformly.
  • a powdery substance called white powder may adhere to the surface of the discharge lamp.
  • This white powder is thought to be an oxide that reacts with the ultraviolet rays emitted from the discharge lamp when Si-based floating substances in the atmosphere of the room where the ultraviolet irradiation device is installed enter the ultraviolet irradiation device. It has been.
  • the white powder adheres to the surface of the discharge lamp, the white powder absorbs ultraviolet rays, so that the amount of ultraviolet radiation emitted from the discharge lamp is reduced, and there are other problems such as particles that contribute to defective processing objects. .
  • the user of the ultraviolet irradiation device is required to perform an operation for periodically cleaning the white powder adhering to the discharge lamp, which increases the management burden of the device.
  • the present invention has been made in view of such circumstances, and an object of the present invention is to efficiently irradiate a processing object with ultraviolet rays while reducing the management burden of the ultraviolet irradiation device as much as possible. is there.
  • an ultraviolet ray provided with a discharge lamp for irradiating an ultraviolet ray toward a processing object and a gas supply means for supplying a gas to a space between the discharge lamp and the processing object.
  • the gas supply means includes a gas outlet arranged on a side of the discharge lamp, and a shield that covers the space surrounding the discharge lamp on the side opposite to the side where the object to be processed exists. It is prepared for.
  • the inventor of the present invention has performed a gas flow analysis in a configuration in which gas is simply ejected from the outlet toward the discharge lamp in a down flow. As a result, the flow of gas ejected from the outlet is spiral, particularly a discharge lamp. It was confirmed that vertical vortex turbulent flow was generated. Impurities that have entered from the outside are wound up to the upper part of the discharge lamp by this vortex-like turbulent flow, and the above-mentioned white powder adheres to the discharge lamp by being further blown onto the discharge lamp along the gas downflow. It was.
  • the gas sprayed toward the discharge lamp from the outlet arranged on the side of the discharge lamp preferably the outlet arranged below the upper surface of the lamp on the side of the discharge lamp, thereby hitting the discharge lamp.
  • the gas formed a laminar flow along the discharge lamp surface.
  • an external electrode type discharge lamp in which a ground side electrode is provided on the lower surface of the discharge lamp and a high voltage side electrode is provided on the upper surface of the lamp is used, it is difficult to bring the air outlet close to the upper side of the discharge lamp because of the high voltage. For this reason, it is preferable to provide an outlet on the upper surface of the discharge lamp, particularly below the upper external electrode.
  • the discharge lamp By blowing the gas directly onto the discharge lamp in this manner, the discharge lamp is accurately cooled with a relatively small gas flow rate, and a decrease in the ultraviolet radiation intensity accompanying a rise in the temperature of the discharge lamp is suppressed. Furthermore, the adhesion of white powder to the discharge lamp is suppressed by the clean flow of the layered gas along the surface of the discharge lamp.
  • the injection of the gas toward the discharge lamp preferably means that the gas is blown onto the surface of the discharge lamp so that the gas forms a laminar flow along the surface of the discharge lamp. This is because adhesion of white powder to the surface of the discharge lamp can be sufficiently suppressed.
  • a discharge port for discharging the gas is formed in the shield. Therefore, by generating a clean flow of laminar gas formed along the surface of the discharge lamp from the discharge port, it is possible to suppress the generation of a vortex, particularly a vertical vortex flow accompanied by winding up upward of the discharge lamp. Can do. Thereby, it is possible to suppress impurities from being mixed into the gas flow and suppress the adhesion of white powder to the discharge lamp. More preferably, it is an ultraviolet irradiation device in which the outlet is disposed on both sides of the discharge lamp. This is because the cooling effect and the white powder adhesion suppressing effect can be enhanced substantially uniformly in both longitudinal regions of the discharge lamp.
  • the following cases are preferable because a gas escape passage is formed. That is, in the case of having a transport means for transporting an object to be irradiated such as a glass substrate in one direction perpendicular to the longitudinal direction of the lamp, the gas escapes in one direction by the flow of the object to be irradiated. .
  • the discharge lamp has a flat shape that is long in one direction and a smooth curved shape at an end in the short side direction.
  • a plurality of the outlets are arranged side by side on both sides of the discharge lamp so as to eject the gas toward the end portion in the short side direction of the discharge lamp. That is, the gas ejected from the outlet toward the end portion in the short side direction of the discharge lamp flows along the smooth curved shape of the end portion and spreads gently on the flat surface to form a laminar flow. In this way, the gas flow gently spreads on the flat surface of the discharge lamp, so that the generation of vortices due to the gas flow is further suppressed.
  • the air outlets arranged on both sides of the discharge lamp include the air outlet on one side and the air outlet on the other side.
  • the mouths are arranged side by side in a state of being displaced from each other in the longitudinal direction of the discharge lamp. That is, the flow of the gas ejected from the outlet is gently spread on the flat surface of the discharge lamp to suppress the generation of a spiral flow, but the gas ejected from both sides of the discharge lamp collides on the flat surface. In such a configuration, a vortex flow may be generated depending on the flow rate of the gas.
  • the temperature rise of the discharge lamp and the adhesion of white powder to the discharge lamp are suppressed, and the management burden of the ultraviolet irradiation device is reduced as much as possible.
  • the management burden of the ultraviolet irradiation device is reduced as much as possible.
  • the second aspect of the invention since the generation of a vortex in the gas flow, in particular, a vertical vortex flow that is wound up upward of the discharge lamp, is suppressed, the adhesion of white powder to the discharge lamp is further suppressed. It became possible.
  • the generation of vortices due to the gas flow is further suppressed, so that the adhesion of white powder to the discharge lamp can be further suppressed.
  • the generation of the vortex flow of gas can be more accurately eliminated, the adhesion of white powder to the discharge lamp can be further suppressed.
  • the cleaning device CL irradiates the glass substrate 1 that is a processing target of the cleaning process with vacuum ultraviolet rays of 200 nm or less (specifically, ultraviolet rays having a wavelength of 172 nm), and the ultraviolet rays and the active oxygen generated by the ultraviolet rays.
  • 4 is an apparatus for decomposing and removing organic contaminants on the surface of the glass substrate 1. As shown in the schematic cross-sectional view of FIG. 4, transport rollers 3 for transporting the glass substrate 1 are arranged side by side in the housing 2.
  • a plurality of discharge lamps 4, called so-called excimer lamps, are positioned near the center of the transport path by the transport roller 3 in the transport direction of the glass substrate 1 (the direction indicated by the arrow TD in FIG. The same applies to FIG. 3 as well.
  • the discharge lamp in particular, the lower irradiation surface is a flat discharge lamp having a flat surface, and the non-conveyed object such as the glass substrate is not disposed between the lower irradiation surface side and the non-conveyed object such as a glass substrate.
  • Such an ultraviolet irradiation device is called a semi-open type ultraviolet irradiation device.
  • the glass substrate 1 when the glass substrate 1 is carried in from the upstream side (right side in FIG. 4), the glass substrate 1 is conveyed and driven downstream at a set speed by the conveying roller 3, and the discharge lamp 4 is moved to the glass substrate. 1 is irradiated with ultraviolet rays. Since vacuum ultraviolet rays such as a 172 nm band irradiated by the discharge lamp 4 are largely absorbed by oxygen in the air, the atmosphere in the vicinity of the conveyance path of the glass substrate 1 in the housing 2 is a clean inert gas supplied from the outside. The inert gas that has been replaced with gas and has passed through the transfer path is discharged from the exhaust port 2a at the bottom of the housing 2.
  • nitrogen gas is used as the inert gas, but other inert gases may be used. Further, depending on the purpose, a small amount of air, oxygen, or the like that can be substantially processed by irradiating ultraviolet rays may be mixed into the inert gas (referred to as “process gas”). Further, a mixture of two or more kinds of gases may be used.
  • the discharge lamp 4 exemplified in the present embodiment is a perspective view of the glass lamp 1 cut in the transport direction of the glass substrate 1
  • FIG. 2 is a cross-sectional view of the glass substrate 1 cut in the transport direction
  • FIG. 3 showing a plan view in a horizontal direction slightly above the upper surface of the discharge lamp 4, it has a long flat shape in one direction (the lateral width direction of the glass substrate 1), It has a structure in which both ends in the longitudinal direction of an elongated flat tube are closed.
  • the discharge lamp 4 has a rectangular shape elongated in the one direction (the horizontal direction of conveyance of the glass substrate 1) in the normal direction of the flat surface thereof, and the short side direction (of the glass substrate 1 of the glass substrate 1).
  • the end portion (side end portion) in the transport direction has a smooth curved shape rounded outwardly.
  • the material of the discharge lamp 4 is synthetic quartz glass, and the discharge lamp 4 is filled with, for example, a rare gas such as xenon, argon, or krypton, and a halogen gas such as fluorine or chlorine, if necessary.
  • a pair of electrodes is formed on the flat surface of the discharge lamp 4 on the upper surface side and the lower surface side (the side where the glass substrate 1 is present).
  • the electrode on the upper surface side is a solid electrode in which the electrodes of the metal film are uniformly formed, and the electrode on the lower surface side is a mesh electrode in which the metal film is formed in a mesh shape.
  • the nitrogen gas supply flow path in the vicinity of the discharge lamp 4 includes a round pipe 11, a square pipe 12 connected to the lower end of the round pipe 11, and a glass substrate. 1 is formed by a shield 13 that covers the space surrounding the discharge lamp 4 on the side opposite to the existence side, that is, the upper side.
  • a plurality of round pipes 11 are connected to one square pipe 12 and feed clean nitrogen gas supplied from the outside into the internal space of the square pipe 12.
  • the square pipe 12 has substantially the same length as the discharge lamp 4 in the conveyance width direction of the glass substrate 1, and a plurality of openings 12 a for ejecting nitrogen gas are formed on both side surfaces of the square pipe 12. Yes.
  • the openings 12a are formed at regular pitches in the longitudinal direction of the square pipe 12.
  • the round pipe 11 and the square pipe 12 connected to each other are arranged between the discharge lamps 4 arranged in the conveyance direction of the glass substrate 1 and will be described in detail later. Nitrogen gas is ejected toward the discharge lamp 4 located on the side.
  • the shield 13 has a substantially U-shaped cross section when viewed in the conveyance width direction of the glass substrate 1, and covers the vicinity of the discharge lamp 4 from above in such a posture that the open side of the U-shape is directed downward.
  • the lower end position of the shield 13 is located slightly below the lower end position of the square pipe 12, and ultraviolet rays radiated from the side end portion of the discharge lamp 4 toward the square pipe 12 are used by the shield 13. Blocking.
  • the shield 13 also has substantially the same length as the discharge lamp 4 in the conveyance width direction of the glass substrate 1.
  • the side surface of the square pipe 12 and the vertical wall portion 13a of the shield 13 are disposed close to each other with a slight gap therebetween.
  • the vertical wall portion 13a has a slightly larger diameter outlet 13b than the opening 12a of the square pipe 12. However, it is formed so as to be concentric with the opening 12a when viewed in the transport direction of the glass substrate 1 in correspondence with each opening 12a.
  • the height of the opening 12a and the outlet 13b is made to coincide with the center position in the height direction (that is, the thickness direction) of the discharge lamp 4, and the nitrogen gas supplied to the internal space of the square pipe 12 is the opening 12a. And it blows out toward the top part of the discharge lamp 4 side edge part through the blower outlet 13b.
  • the discharge lamp 4 whose upper side is covered with the shield 13 is attached to a central position at an equal distance from the blowout ports 13b on both sides by a supporting member (not shown).
  • a slit-like discharge port 13 c for discharging nitrogen gas is formed on the upper surface of the shield 13.
  • the discharge port 13c is located immediately above the center position of the discharge lamp 4 in the conveyance direction of the glass substrate 1 (the direction of the short side of the discharge lamp 4), and as shown by the phantom line in FIG. It is formed in a state where a plurality are arranged in the longitudinal direction.
  • Nitrogen from a blowout port 13b located on both sides of the upstream side and the downstream side in the transport direction of the glass substrate 1 (more specifically, on both sides of the upstream side and the downstream side) with respect to one discharge lamp 4 Gas is injected, but as shown by the arrow A in the plan view of FIG. 3, the positions of the outlets 13 b arranged at equal pitches on the upstream side and the downstream side are 1 ⁇ 2 pitch each other. Misaligned and staggered. However, only the end portion of the arrangement of the outlets 13b is arranged with the upstream side and the downstream side facing each other.
  • the nitrogen gas forming the flow path accurately replaces the space between the lower surface side of the discharge lamp 4 and the glass substrate 1 with the nitrogen gas, as well as a relatively small flow rate.
  • the discharge lamp 4 is effectively cooled with nitrogen gas, and the adhesion of white powder is effectively suppressed by the flow of clean nitrogen gas. Furthermore, since the nitrogen gas that has flowed upward is discharged through the discharge port 13c, the turbulence of the airflow that scatters the white powder can also be suppressed.
  • the nitrogen gas that has flowed downward is discharged from the exhaust port 2a at the bottom of the housing 2 or flows in the TD direction together with the object to be processed.
  • the discharge lamp 4 is exemplified as a flat shape, but the present invention can be applied to various shapes such as a discharge lamp having a circular cross section.
  • the discharge lamp 4 is arranged in a staggered arrangement in the transport lateral width direction with the outlet 13b on the upstream side in the transport direction of the glass substrate 1 and the outlet 13b on the downstream side.
  • the upstream side outlet 13b and the downstream side outlet 13b may be arranged so as to face each other.
  • the present invention can be applied to various processing devices using ultraviolet rays.
  • the gas supply means GS supplies nitrogen gas for each discharge lamp 4 is exemplified as a configuration in which nitrogen gas is ejected from both sides of one discharge lamp 4.
  • a configuration may be adopted in which a plurality of discharge lamps are arranged and supplied in a form in which gas is ejected collectively.
  • the discharge port 13c is formed in the upper position (position on the opposite side to the presence side of the glass substrate 1 with respect to the discharge lamp 4) in the shield 13 in the shield 13 is illustrated.
  • FIG. 5 it is good also as a structure which is not equipped with the discharge port 13c in the shielding body 13.
  • FIG. FIG. 5 corresponds to FIG. 2 in the above embodiment.
  • the nitrogen gas flowing along the upper surface of the discharge lamp 4 in FIG. 5 once rises and then passes through the low pressure portion between the adjacent blowout ports 13b to discharge. It is discharged to the lower side of the lamp 4 (the side where the glass substrate 1 is present with respect to the discharge lamp 4). Even in such a configuration, the adhesion of white powder to the discharge lamp 4 is suppressed by the flow of the layered clean nitrogen gas formed on the surface of the discharge lamp 4.

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning In General (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Health & Medical Sciences (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

La présente invention concerne la possibilité d’irradier, avec une grande efficacité, une lumière ultraviolette sur un objet devant être traité tout en réduisant autant que possible une charge de gestion sur un dispositif d'irradiation de lumière ultraviolette. Le dispositif d'irradiation de lumière ultraviolette comprend des lampes à décharge adaptées pour irradier une lumière ultraviolette sur l'objet devant être traité et des moyens de fourniture de gaz adaptés pour fournir du gaz dans l'espace situé entre les lampes à décharge et l'objet devant être traité. Selon l'invention, les moyens de fourniture de gaz comprennent des orifices d'injection de gaz qui sont disposés sur les côtés latéraux des lampes à décharge, ainsi qu'un blindage qui recouvre l'espace situé autour des lampes à décharge sur le côté opposé du côté où l'objet devant être traité est situé.
PCT/JP2009/066452 2008-09-18 2009-09-18 Dispositif d'irradiation de lumière ultraviolette WO2010032852A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010529827A JP5534344B2 (ja) 2008-09-18 2009-09-18 紫外線照射装置
CN200980132822.2A CN102132384B (zh) 2008-09-18 2009-09-18 紫外线照射装置
KR1020107027778A KR101660477B1 (ko) 2008-09-18 2009-09-18 자외선 조사 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008240090 2008-09-18
JP2008-240090 2008-09-18

Publications (1)

Publication Number Publication Date
WO2010032852A1 true WO2010032852A1 (fr) 2010-03-25

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PCT/JP2009/066452 WO2010032852A1 (fr) 2008-09-18 2009-09-18 Dispositif d'irradiation de lumière ultraviolette

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JP (1) JP5534344B2 (fr)
KR (1) KR101660477B1 (fr)
CN (1) CN102132384B (fr)
TW (1) TWI466735B (fr)
WO (1) WO2010032852A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014193450A (ja) * 2013-03-29 2014-10-09 Gs Yuasa Corp 光照射装置
JP2015230838A (ja) * 2014-06-05 2015-12-21 ウシオ電機株式会社 エキシマ光照射装置
US10294234B2 (en) 2017-02-06 2019-05-21 Gilead Sciences, Inc. HIV inhibitor compounds
US11052087B2 (en) 2018-07-30 2021-07-06 Gilead Sciences, Inc. Anti-HIV compounds

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6711023B2 (ja) * 2016-03-03 2020-06-17 ウシオ電機株式会社 紫外線照射装置
CN108242412B (zh) * 2016-12-26 2020-06-23 台湾积体电路制造股份有限公司 半导体元件固化装置、基材处理系统以及半导体元件固化方法
CN108212950B (zh) * 2018-01-04 2021-01-26 京东方科技集团股份有限公司 一种极紫外光清洗设备及基材清洗方法

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JPH05226262A (ja) * 1992-02-14 1993-09-03 Hitachi Ltd 表面処理装置
JP2006134983A (ja) * 2004-11-04 2006-05-25 Ushio Inc エキシマ光照射装置
JP2008043925A (ja) * 2006-08-21 2008-02-28 Ushio Inc エキシマランプ装置

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JPH04264723A (ja) * 1991-02-20 1992-09-21 Toshiba Lighting & Technol Corp 紫外線照射装置
US6605889B2 (en) * 2001-10-24 2003-08-12 Matsushita Electric Works Ltd Electrodeless low pressure lamp with multiple ferrite cores and coils
JP4093065B2 (ja) * 2003-01-17 2008-05-28 ウシオ電機株式会社 エキシマランプ発光装置
JP5148803B2 (ja) * 2003-05-21 2013-02-20 株式会社Ｇｓユアサ 無声放電ランプ
JP4337547B2 (ja) * 2003-12-26 2009-09-30 株式会社ジーエス・ユアサコーポレーション 紫外光洗浄装置および紫外光洗浄装置用紫外線ランプ
JP2006185656A (ja) * 2004-12-27 2006-07-13 Harison Toshiba Lighting Corp 誘電体バリア放電ランプおよび紫外線照射装置

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Publication number Priority date Publication date Assignee Title
JPH05226262A (ja) * 1992-02-14 1993-09-03 Hitachi Ltd 表面処理装置
JP2006134983A (ja) * 2004-11-04 2006-05-25 Ushio Inc エキシマ光照射装置
JP2008043925A (ja) * 2006-08-21 2008-02-28 Ushio Inc エキシマランプ装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014193450A (ja) * 2013-03-29 2014-10-09 Gs Yuasa Corp 光照射装置
JP2015230838A (ja) * 2014-06-05 2015-12-21 ウシオ電機株式会社 エキシマ光照射装置
US10294234B2 (en) 2017-02-06 2019-05-21 Gilead Sciences, Inc. HIV inhibitor compounds
US10752636B2 (en) 2017-02-06 2020-08-25 Gilead Sciences, Inc. HIV inhibitor compounds
US11078208B1 (en) 2017-02-06 2021-08-03 Gilead Sciences, Inc. HIV inhibitor compounds
US11052087B2 (en) 2018-07-30 2021-07-06 Gilead Sciences, Inc. Anti-HIV compounds

Also Published As

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CN102132384A (zh) 2011-07-20
KR20110063712A (ko) 2011-06-14
TW201014660A (en) 2010-04-16
TWI466735B (zh) 2015-01-01
KR101660477B1 (ko) 2016-09-27
CN102132384B (zh) 2013-08-14
JP5534344B2 (ja) 2014-06-25
JPWO2010032852A1 (ja) 2012-02-16

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