WO2010032504A1 - Panneau de conversion d'image de rayonnement et son procédé de fabrication - Google Patents

Panneau de conversion d'image de rayonnement et son procédé de fabrication Download PDF

Info

Publication number
WO2010032504A1
WO2010032504A1 PCT/JP2009/055044 JP2009055044W WO2010032504A1 WO 2010032504 A1 WO2010032504 A1 WO 2010032504A1 JP 2009055044 W JP2009055044 W JP 2009055044W WO 2010032504 A1 WO2010032504 A1 WO 2010032504A1
Authority
WO
WIPO (PCT)
Prior art keywords
phosphor
image conversion
radiation image
conversion panel
vapor deposition
Prior art date
Application number
PCT/JP2009/055044
Other languages
English (en)
Japanese (ja)
Inventor
惠民 笠井
康史 永田
寛 伊佐
誠 飯島
Original Assignee
コニカミノルタエムジー株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by コニカミノルタエムジー株式会社 filed Critical コニカミノルタエムジー株式会社
Publication of WO2010032504A1 publication Critical patent/WO2010032504A1/fr

Links

Images

Classifications

    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/62—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing gallium, indium or thallium
    • C09K11/626—Halogenides
    • C09K11/628—Halogenides with alkali or alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694—Halides
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
    • G21K2004/06—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens with a phosphor layer

Definitions

  • the present invention relates to a radiation image conversion panel having high sensitivity (high luminance), high sharpness, and excellent storage stability, and a method for manufacturing the same.
  • radiographic images such as X-ray images have been widely used for diagnosis of medical conditions in the medical field.
  • radiographic images using intensifying screens and film systems have been developed as an imaging system that combines high reliability and excellent cost performance as a result of high sensitivity and high image quality in a long history. Used in the medical field.
  • these pieces of image information are so-called analog image information, and free image processing and instantaneous electric transmission cannot be performed like digital image information that has been developing in recent years.
  • the flat plate X-ray detector is characterized in that the device is smaller than CR and the image quality at high dose is excellent.
  • a scintillator plate made of an X-ray phosphor having a characteristic of emitting light by radiation is used to convert the radiation into visible light.
  • the radiation image conversion panel used for the radiation image detection is composed of a support and a phosphor layer provided thereon as a basic structure.
  • a support is not necessarily required when the phosphor layer is self-supporting.
  • a protective layer is usually provided on the upper surface of the phosphor layer (the surface not facing the support) to protect the phosphor layer from chemical alteration or physical impact.
  • the phosphor layer is composed of a phosphor and a binder containing and supporting the phosphor in a dispersed state, and is composed only of an aggregate of phosphors without including a binder formed by vapor deposition or sintering. And those in which a polymer substance is impregnated in the gap between the phosphor and the aggregate of the phosphor are known.
  • a radiation image conversion containing at least a stimulable phosphor is performed by separating a radiation absorbing function and an energy storage function of a conventional stimulable phosphor.
  • a radiation image forming method using a combination of a panel and a phosphor screen containing a phosphor (radiation absorbing phosphor) that absorbs radiation and emits light in an ultraviolet to visible region has been proposed (for example, Patent Document 1). reference.).
  • radiation that has passed through a subject is first converted into light in the ultraviolet or visible region by the screen or panel radiation absorbing phosphor, and then the radiation is imaged by the panel energy storage phosphor. Accumulate and record as information.
  • the panel is scanned with excitation light to emit emitted light, and the emitted light is read photoelectrically to obtain an image signal.
  • the radiological image detection method (and the radiographic image formation method) is a method having a number of excellent advantages as described above. However, even in the radiographic image conversion panel used in this method, it is as sensitive as possible and It is desired to provide an image with good image quality (sharpness, graininess, etc.).
  • the vapor deposition method includes a vapor deposition method and a sputtering method.
  • the vapor deposition method evaporates and scatters the evaporation source by heating the evaporation source made of the phosphor or its raw material by irradiation with a resistance heater or an electron beam.
  • a phosphor layer made of columnar crystals of the phosphor is formed.
  • the phosphor layer formed by the vapor deposition method does not contain a binder and is composed only of the phosphor, and there are voids between the columnar crystals of the phosphor. For this reason, since the entrance efficiency of excitation light and the extraction efficiency of emitted light can be increased, the sensitivity is high, and the scattering of the excitation light in the plane direction can be prevented, so that a high sharpness image can be obtained. .
  • a scintillator made of an X-ray phosphor having a characteristic of emitting light by radiation is used.
  • light emission is used. It becomes necessary to use highly efficient scintillators.
  • the light emission efficiency of a scintillator is determined by the thickness of the phosphor layer and the X-ray absorption coefficient of the phosphor. The thicker the phosphor layer, the more scattered the emitted light in the phosphor layer. However, sharpness decreases. Therefore, when the sharpness necessary for the image quality is determined, the layer thickness is determined.
  • CsI cesium iodide
  • phosphors can be easily formed into a columnar crystal structure by vapor deposition. Therefore, scattering of emitted light within the crystal by the light guide effect. And the thickness of the phosphor layer can be increased (see, for example, Patent Document 3).
  • CsI cesium iodide
  • CaI cesium iodide
  • NaI sodium iodide
  • TlI thallium iodide
  • Visible conversion efficiency is improved by performing heat treatment at a temperature of 200 ° C. to 500 ° C. on what is deposited as thallium activated cesium iodide (CsI: Tl) on the (substrate), and used as an X-ray phosphor.
  • a phosphor layer (also referred to as “scintillator layer”) based on cesium iodide (CsI) has a deliquescent property and has a drawback that the characteristics deteriorate with time.
  • CsI cesium iodide
  • the present invention has been made in view of the above-mentioned problems and situations, and the problem to be solved is a radiation image conversion panel having high sensitivity (high brightness), high sharpness, and excellent storage stability, and a method for producing the same. Is to provide.
  • a moderate vacuum about 0.1 Pa to 10 Pa
  • a resistance heating method In the case of performing vapor deposition, it has been found that when a phosphor is vapor-deposited at a vapor deposition mass rate within a specific range, a phosphor layer with extremely good columnar crystallinity and a remarkably high light emission amount can be obtained, leading to the present invention.
  • a radiation image conversion panel having a phosphor layer containing a phosphor columnar crystal composed mainly of a cesium halide phosphor formed by a vapor deposition method, wherein the phosphor layer has a degree of vacuum of 0. It is characterized in that it is formed under the condition that it is maintained within the range of 05 Pa to 10 Pa and the deposition mass rate is maintained within the range of 0.01 mg / cm 2 ⁇ min to 2.0 mg / cm 2 ⁇ min. Radiation image conversion panel.
  • the phosphor columnar crystal is (1) an additive containing at least one of cesium iodide (CsI) and cesium bromide (CsBr) and (2) at least one of thallium (Tl) and europium (Eu); 2.
  • CsI cesium iodide
  • CsBr cesium bromide
  • Tl thallium
  • Eu europium
  • a method for producing a radiation image conversion panel comprising: forming a phosphor layer by a vapor deposition method including a step of vapor-depositing a phosphor material while rotating the support.
  • the radiation image conversion panel of the present invention is a radiation image conversion panel having a phosphor layer containing a phosphor columnar crystal mainly composed of a cesium halide phosphor formed by a vapor deposition method. Under the condition that the body layer maintains the degree of vacuum within the range of 0.05 Pa to 10 Pa and the deposition mass rate within the range of 0.01 mg / cm 2 ⁇ min to 2.0 mg / cm 2 ⁇ min. , Formed.
  • the degree of vacuum is more preferably in the range of 0.10 Pa to 2.0 Pa.
  • the phosphor columnar crystal is composed of (1) at least one of cesium iodide (CsI) and cesium bromide (CsBr), and (2) of thallium (Tl) and europium (Eu). It is preferable that the raw material is an additive containing at least one of the above.
  • a phosphor is produced by evaporating a substance generated by heating an evaporation source containing a cesium halide phosphor or its raw material on a support in a vapor deposition apparatus.
  • the phosphor layer is formed by performing vapor deposition while changing the degree of vacuum in the vapor deposition apparatus within the range in the course of forming the phosphor layer. Moreover, it is also preferable to perform vapor deposition by changing the vapor deposition mass rate within the range in the course of forming the phosphor layer. Furthermore, it is also preferable to perform vapor deposition by changing the temperature of the support in the course of forming the phosphor layer. The thickness of the support is preferably in the range of 30 ⁇ m to 500 ⁇ m.
  • a support is installed in the support rotating mechanism using a vapor deposition apparatus having an evaporation source and a support rotating mechanism in a vacuum vessel, and the support is supported.
  • the method is a manufacturing method in which the phosphor layer is formed by a vapor deposition method including a step of vapor-depositing the phosphor material while rotating the body.
  • the radiation image conversion panel of the present invention is characterized by having a phosphor layer containing a phosphor columnar crystal mainly composed of a cesium halide phosphor formed by a vapor deposition method. It is preferable that various functional layers as described later are provided in addition to the layers depending on the purpose.
  • the radiation image conversion panel of the present invention is a radiation image conversion panel in which a phosphor layer is provided on a first substrate by a vapor deposition method via a functional layer such as a reflective layer.
  • a functional layer such as a reflective layer.
  • a radiation image conversion panel may be used, or after forming a planar light receiving element on a substrate, a radiation image conversion may be performed by providing a phosphor layer directly or through a functional layer such as a reflective layer or a protective layer by a vapor deposition method. It is good as a panel.
  • a phosphor layer is provided directly after forming a planar light receiving element on a substrate. The same applies to the radiation image conversion panel.
  • the phosphor layer according to the present invention is a phosphor layer containing a phosphor columnar crystal composed mainly of a cesium halide phosphor formed by a vapor deposition method.
  • the phosphor constituting the phosphor layer As a material for forming the phosphor constituting the phosphor layer according to the present invention, various known phosphor materials can be used. In the present invention, in particular, cesium iodide (CsI) and cesium bromide are used.
  • the phosphor layer is preferably formed using at least one of (CsBr) as a main component. These compounds have a relatively high rate of change from X-rays to visible light, and can easily form phosphors into a columnar crystal structure by vapor deposition. Therefore, scattering of emitted light within the crystal is suppressed by the light guide effect, and fluorescence is reduced. This is because the thickness of the body layer can be increased.
  • CsI cesium iodide
  • CsBr cesium bromide
  • CsI cesium iodide
  • NaI sodium iodide
  • CsI as disclosed in Japanese Patent Application Laid-Open No. 2001-59899 is deposited, and thallium (Tl), europium (Eu), indium (In), lithium (Li), potassium (K), rubidium (Rb) ), CsI containing an activating substance such as sodium (Na) is preferred.
  • thallium (Tl) and europium (Eu) are particularly preferable.
  • thallium (Tl) is preferred.
  • the content of the additive is an optimum amount according to the target performance, but 0.001 mol% to 50 mol with respect to the content of cesium iodide. %, And preferably 0.1 mol% to 10.0 mol%.
  • the additive when the additive is 0.001 mol% or more with respect to cesium iodide or cesium bromide, the emission luminance obtained by using cesium iodide or cesium bromide alone is improved, and the intended light emission is achieved. This is preferable in terms of obtaining luminance. Moreover, it is preferable that it is 50 mol% or less because the properties and functions of cesium iodide or cesium bromide can be maintained.
  • the thickness of the phosphor layer is preferably 100 ⁇ m to 800 ⁇ m, and more preferably 120 ⁇ m to 700 ⁇ m from the viewpoint of obtaining a good balance between luminance and sharpness characteristics.
  • the phosphor columnar crystal according to the present invention needs to be formed by a vapor deposition method.
  • a vapor deposition method a vapor deposition method, a sputtering method, a CVD method, an ion plating method, or the like can be used.
  • the vapor deposition method is particularly preferable.
  • the cesium halide phosphor may be a phosphor represented by the following basic composition formula (I) or (II).
  • X is iodine (I)
  • z is preferably a numerical value within the range of 1 ⁇ 10 ⁇ 3 ⁇ z ⁇ 50, and 1 ⁇ 10 ⁇ 1 ⁇ z. A numerical value within the range of ⁇ 10 is more preferable.
  • X is bromine (Br)
  • z is preferably a numerical value in the range of 1 ⁇ 10 ⁇ 5 ⁇ z ⁇ 1 ⁇ 10 ⁇ 2.
  • a numerical value within the range of ⁇ 5 ⁇ z ⁇ 1 ⁇ 10 ⁇ 3 is more preferable.
  • M I represents at least one alkali metal selected from Li, Na, K and Rb
  • M II represents at least one selected from Be, Mg, Ca, Sr, Ba, Ni, Cu, Zn and Cd.
  • M III represents Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Represents at least one rare earth element or trivalent metal selected from Al, Ga and In;
  • X, X a , X b and X c each represent at least one halogen selected from F, Cl, Br and I;
  • A, b, c, and z represent numerical values in the ranges of 0 ⁇ a ⁇ 0.5, 0 ⁇ b ⁇ 0.5, 0 ⁇ c ⁇ 0.5, and 0 ⁇ z ⁇ 1.0, respectively. .
  • a reflective layer (also referred to as a “metal reflective layer”) on the support (substrate), in order to reflect light emitted from the phosphor and increase the light extraction efficiency.
  • the reflective layer is preferably formed of a material containing any element selected from the element group consisting of Al, Ag, Cr, Cu, Ni, Ti, Mg, Rh, Pt, and Au.
  • a metal thin film composed of the above elements for example, an Ag film, an Al film, or the like. Two or more such metal thin films may be formed.
  • the lower layer is preferably a layer containing Cr from the viewpoint of improving the adhesion to the substrate.
  • a layer made of a metal oxide such as SiO 2 or TiO 2 may be provided in this order on the metal thin film to further improve the reflectance.
  • the thickness of the reflective layer is preferably 0.005 ⁇ m to 0.3 ⁇ m, more preferably 0.01 ⁇ m to 0.2 ⁇ m from the viewpoint of emission light extraction efficiency.
  • the formation method of the reflective layer according to the present invention may be any known method, and examples thereof include a sputtering process using the above raw materials.
  • a metal protective layer may be provided on the reflective layer.
  • the metal protective layer is preferably formed by applying and drying a resin dissolved in a solvent.
  • a polymer having a glass transition point of 30 ° C. to 100 ° C. is preferable from the viewpoint of forming a film with a deposited crystal and a support (substrate).
  • polyurethane resin vinyl chloride copolymer, vinyl chloride-acetic acid Vinyl copolymer, vinyl chloride-vinylidene chloride copolymer, vinyl chloride-acrylonitrile copolymer, butadiene-acrylonitrile copolymer, polyamide resin, polyvinyl butyral, polyester resin, cellulose derivative (nitrocellulose, etc.), styrene-butadiene copolymer
  • polyamide resin polyvinyl butyral
  • polyester resin cellulose derivative (nitrocellulose, etc.)
  • styrene-butadiene copolymer examples include polymers, various synthetic rubber resins, phenol resins, epoxy resins, urea resins, melamine resins, phenoxy resins, silicon resins, acrylic resins, urea formamide resins, and the like, and polyester resins are particularly preferable.
  • the thickness of the metal protective layer is preferably 0.1 ⁇ m or more in terms of adhesion, and preferably 3.0 ⁇ m or less in terms of ensuring the smoothness of the surface of the metal protective layer. More preferably, the thickness of the metal protective layer is in the range of 0.2 to 2.5 ⁇ m.
  • Solvents used for metal protective layer preparation include lower alcohols such as methanol, ethanol, n-propanol and n-butanol, chlorine atom-containing hydrocarbons such as methylene chloride and ethylene chloride, ketones such as acetone, methyl ethyl ketone and methyl isobutyl ketone, Aromatic compounds such as toluene, benzene, cyclohexane, cyclohexanone, xylene, esters of lower fatty acids and lower alcohols such as methyl acetate, ethyl acetate, butyl acetate, ethers such as dioxane, ethylene glycol monoethyl ester, ethylene glycol monomethyl ester, And mixtures thereof.
  • lower alcohols such as methanol, ethanol, n-propanol and n-butanol
  • chlorine atom-containing hydrocarbons such as methylene chloride and ethylene chloride
  • ketones such
  • the undercoat layer In the present invention, it is preferable to provide an undercoat layer from the viewpoint of attaching a film between the support (substrate) and the phosphor layer or between the reflective layer and the phosphor layer.
  • the undercoat layer preferably contains a polymer binder (binder), a dispersant and the like.
  • the thickness of the undercoat layer is 0.5 ⁇ m from the viewpoint of suppressing light scattering in the undercoat layer and preventing deterioration of sharpness and preventing disorder of columnar crystallinity by heat treatment. It is preferable to adjust to a range of ⁇ 4 ⁇ m.
  • the undercoat layer according to the present invention is preferably formed by applying and drying a polymer binder (hereinafter also referred to as “binder”) dissolved or dispersed in a solvent.
  • a polymer binder hereinafter also referred to as “binder”
  • the polymer binder include polyurethane, vinyl chloride copolymer, vinyl chloride-vinyl acetate copolymer, vinyl chloride-vinylidene chloride copolymer, vinyl chloride-acrylonitrile copolymer, butadiene-acrylonitrile copolymer.
  • Polymer polyamide resin, polyvinyl butyral, polyester, cellulose derivative (nitrocellulose, etc.), styrene-butadiene copolymer, various synthetic rubber resins, phenol resin, epoxy resin, urea resin, melamine resin, phenoxy resin, silicone resin , Acrylic resins, urea formamide resins, and the like.
  • polyurethane, polyester, vinyl chloride copolymer, polyvinyl butyral, and nitrocellulose are preferably used.
  • polyurethane, polyester, vinyl chloride copolymer, polyvinyl butyral, nitrocellulose and the like are particularly preferable in terms of adhesion to the phosphor layer.
  • a polymer having a glass transition temperature (Tg) of 30 to 100 ° C. is preferable from the viewpoint of attaching a film between the deposited crystal and the support (substrate). From this viewpoint, a polyester resin is particularly preferable.
  • Solvents that can be used to prepare the undercoat layer include lower alcohols such as methanol, ethanol, n-propanol, and n-butanol, hydrocarbons containing chlorine atoms such as methylene chloride and ethylene chloride, acetone, methyl ethyl ketone, and methyl isobutyl ketone.
  • ketones such as ketones, toluene, benzene, cyclohexane, cyclohexanone, xylene and other aromatic compounds, methyl acetate, ethyl acetate, butyl acetate and other lower fatty acid and lower alcohol esters, dioxane, ethylene glycol monoethyl ester, ethylene glycol monomethyl ester And ethers thereof and mixtures thereof.
  • the undercoat layer according to the present invention may contain a pigment or a dye in order to prevent scattering of light emitted from the phosphor and improve sharpness.
  • the protective layer according to the present invention focuses on protecting the phosphor layer. That is, cesium iodide (CsI) or cesium bromide (CsBr) has high hygroscopicity, and if it is left exposed, it absorbs water vapor in the air and deliquesces. To do.
  • CsI cesium iodide
  • CsBr cesium bromide
  • the protective layer can be formed using various materials.
  • a polyparaxylylene film is formed by a CVD method. That is, a polyparaxylylene film can be formed on the entire surface of the phosphor and the support (substrate) to form a protective layer.
  • a polymer film can be provided on the phosphor layer.
  • a film similar to the polymer film as a support (substrate) material described later can be used as a material of the polymer film.
  • the thickness of the polymer film is preferably 12 ⁇ m or more and 120 ⁇ m or less, more preferably 20 ⁇ m or more and 80 ⁇ m or less, taking into consideration the formation of voids, the protective properties of the phosphor layer, sharpness, moisture resistance, workability, etc. Is preferred.
  • the haze ratio is preferably 3% or more and 40% or less, more preferably 3% or more and 10% or less in consideration of sharpness, radiation image unevenness, production stability, workability, and the like.
  • the haze ratio can be measured, for example, by Nippon Denshoku Industries Co., Ltd. NDH5000W.
  • the required haze ratio is appropriately selected from commercially available polymer films and can be easily obtained.
  • the light transmittance of the protective film is preferably 70% or more at 550 nm in consideration of the photoelectric conversion efficiency, the emission wavelength of the phosphor, etc., but a film having a light transmittance of 99% or more is difficult to obtain industrially. Therefore, it is preferably substantially 99% to 70%.
  • the moisture permeability of the protective film is preferably 50 g / m 2 ⁇ day (40 ° C., 90% RH) (measured according to JIS Z0208) or less, more preferably 10 g / m 2 taking into account the protective properties and deliquescence of the phosphor layer.
  • m 2 ⁇ day (40 ° C./90% RH) (measured in accordance with JIS Z0208) or less is preferable, but a film having a moisture permeability of 0.01 g / m 2 ⁇ day (40 ° C./90% RH) or less is industrial.
  • the support (also referred to as “substrate”) is preferably a quartz glass sheet, a metal sheet made of aluminum, iron, tin, chrome, a carbon fiber reinforced sheet, a polymer film, or the like.
  • Polymer films such as cellulose acetate film, polyester film, polyethylene terephthalate (PEN) film, polyamide film, polyimide (PI) film, triacetate film, polycarbonate film, carbon fiber reinforced resin sheet, etc. Can be used.
  • a polymer film containing polyimide or polyethylene naphthalate is suitable for forming phosphor columnar crystals by a vapor phase method using cesium iodide as a raw material.
  • the polymer film as the support (substrate) according to the present invention is preferably a polymer film having a thickness of 30 ⁇ m to 500 ⁇ m and further having flexibility.
  • the "flexible support (substrate) having” means elastic modulus at 120 ° C. (E120) the support is 1000N / mm 2 ⁇ 6000N / mm 2 (substrate), such supports As the (substrate), a polymer film containing polyimide or polyethylene naphthalate is preferable.
  • the “elastic modulus” refers to the slope of the stress relative to the strain amount in a region where the strain indicated by the standard line of the sample conforming to JIS C 2318 and the corresponding stress have a linear relationship using a tensile tester. Is what we asked for. This is a value called Young's modulus, and in the present invention, this Young's modulus is defined as an elastic modulus.
  • Support for use in the present invention is preferably an elastic modulus at the 120 ° C. as described above (E120) is 1000N / mm 2 ⁇ 6000N / mm 2. More preferably, it is 1200 N / mm 2 to 5000 N / mm 2 .
  • a polymer film containing polyimide or polyethylene naphthalate is preferable as described above.
  • the support (substrate) is a polymer film having a thickness of 30 ⁇ m to 500 ⁇ m, so that the scintillator panel is deformed into a shape that matches the shape of the planar light receiving element surface, and is uniform over the entire light receiving surface of the flat panel detector Sharpness is obtained.
  • the support may have a resin layer in order to make the surface smooth.
  • the resin layer preferably contains a compound such as polyimide, polyethylene phthalate, paraffin, graphite, and the film thickness is preferably about 5 ⁇ m to 50 ⁇ m. This resin layer may be provided on the surface of the support or on the back surface.
  • means for providing an adhesive layer on the surface of the support include means such as a bonding method and a coating method.
  • the bonding method is performed using heating and a pressure roller.
  • the heating conditions are about 80 ° C. to 150 ° C.
  • the pressing conditions are 4.90 ⁇ 10 N / cm to 2.94 ⁇ 10 2 N / cm
  • the conveyance speed is 0.1 m / second to 2.0 m / second is preferable.
  • the manufacturing method of the radiation image conversion panel according to the present invention will be described in detail taking the case of vapor deposition by a resistance heating method as an example.
  • the resistance heating method has an advantage that vapor deposition can be performed at a moderate degree of vacuum, and a vapor deposition film having a good columnar crystal can be obtained relatively easily.
  • the phosphor containing the host cesium halide (CsX) component and the activator (Eu or Tl) component prepare at least two evaporation sources comprising Multi-source deposition is preferable because the evaporation rate can be controlled when the vapor pressures of the matrix component and the activator component of the phosphor are greatly different.
  • Each evaporation source may be composed of only a CsX component and an activator (Eu, Tl) component, or may be a mixture with additive components, depending on the desired phosphor composition. .
  • the number of evaporation sources is not limited to two, and for example, three or more evaporation sources may be added by separately adding evaporation sources composed of additive components.
  • the matrix CsX component of the phosphor may be the CsX compound itself, or may be a mixture of two or more raw materials that can react to form CsX.
  • the activator Eu component is generally a compound containing Eu, and for example, Eu halides and oxides are used.
  • the molar ratio of Eu 2+ compound in the Eu compound is preferably 70% or more.
  • Eu compounds contain Eu 2+ and Eu 3+ in a mixture, but the desired stimulating luminescence (or even instantaneous light emission) is emitted from a phosphor using Eu 2+ as an activator. It is.
  • the Eu compound is preferably EuOBr.
  • the Tl compound is preferably thallium iodide (TlI).
  • the evaporation source preferably has a water content of 0.5% by mass or less.
  • the evaporation source is preferably dehydrated by subjecting each of the phosphor components to a heat treatment in a temperature range of 100 ° C. to 300 ° C. under reduced pressure.
  • each phosphor component may be heated and melted in an atmosphere containing no moisture such as a nitrogen gas atmosphere at a temperature equal to or higher than the melting point of the component for several tens of minutes to several hours.
  • the evaporation source particularly the evaporation source containing the CsX component, has an alkali metal impurity (alkali metal other than the constituent elements of the phosphor) of 10 ppm or less, and an alkaline earth metal impurity (phosphor of the phosphor).
  • the content of (alkaline earth metal other than constituent elements) is desirably 5 ppm (mass) or less.
  • Such an evaporation source can be prepared by using a raw material with a low impurity content such as alkali metal or alkaline earth metal.
  • a plurality of evaporation sources and a support are arranged in a vapor deposition apparatus, and the inside of the apparatus is evacuated to a medium vacuum degree of about 0.05 Pa to 10 Pa.
  • the degree of vacuum is preferably 0.05 Pa to 3 Pa.
  • the inside of the apparatus is evacuated to a high vacuum level of about 1 ⁇ 10 ⁇ 5 Pa to 1 ⁇ 10 ⁇ 2 Pa, and then an inert gas such as Ar gas, Ne gas, or N 2 gas is introduced to Apply vacuum.
  • a rotary pump a turbo molecular pump, a cryopump, a diffusion pump, a mechanical booster, or the like can be used in appropriate combination.
  • vapor deposition is performed by setting the vacuum degree in the initial stage of growth including the nucleation part lower than the vacuum degree in the latter half of the growth period.
  • the evaporation source is heated by passing an electric current through each resistance heater.
  • the CsX component, the activator component, and the like, which are evaporation sources, are heated to evaporate and scatter, and cause a reaction to form a phosphor and deposit on the support surface.
  • the temperature of the support is generally in the range of 20 ° C to 350 ° C, more preferably in the range of 25 ° C to 250 ° C.
  • the deposition by changing the support temperature at least once.
  • the deposition is performed by setting the support temperature in the initial stage of growth including the nucleation part lower than the support temperature in the latter half of the growth.
  • the mean free path of the component particles evaporated from the evaporation source by heating is short, and the evaporation component particles do not reach the support unless the distance between the evaporation source and the support is reduced.
  • the support temperature tends to increase due to the influence of radiation from the evaporation source heated by the support.
  • the deposition mass rate exceeds 2 mg / cm 2 ⁇ min, particularly in the case of a thin resin substrate, the temperature rise of the substrate is large, and the light emission amount deviates greatly from the optimum substrate temperature, thereby causing a decrease in light emission amount.
  • the pillars of the phosphors grown on the support were fused and it was difficult to obtain independent columnar crystals. As a result, a phosphor layer with reduced sensitivity and sharpness can be obtained.
  • the vapor deposition mass rate is slower than 0.01 mg / cm 2 ⁇ min, it is found that the vaporized component particles collide with the gas in the vapor deposition apparatus such as an inert gas, and a good columnar crystal cannot be obtained. It was. As a result, the obtained phosphor layer has a reduced amount of X-ray absorption, and it becomes difficult to extract emitted light from the deep part of the phosphor layer, so that the amount of emitted light is reduced. Therefore, the sensitivity and sharpness are similarly reduced.
  • the rate of deposition of the phosphor i.e., the deposition mass rate, in terms of independent columnar crystalline and emission amount, in the range of 0.01 mg / cm 2 ⁇ min ⁇ 2.0mg / cm 2 ⁇ min More preferably, it is in the range of 0.03 mg / cm 2 ⁇ min to 2.0 mg / cm 2 ⁇ min.
  • the deposition rate of the phosphor that is, the deposition mass rate is preferably changed at least once to perform the deposition.
  • vapor deposition is performed by setting the vapor deposition mass rate in the initial stage of growth including the nucleation part lower than the vapor deposition mass rate in the latter half of the growth.
  • the vapor deposition rate of each evaporation source can be controlled by adjusting the resistance current of the heater and the opening area of the crucible.
  • each evaporation source and the support varies depending on the size of the support, but is preferably in the range of 50 mm to 500 mm.
  • the distance between the evaporation sources is preferably in the range of 50 mm to 100 mm.
  • two or more phosphor layers can be formed by performing heating with a resistance heater in a plurality of times.
  • the deposited film may be heat-treated (annealed) after the deposition.
  • a phosphor layer (deposition film) made only of the phosphor matrix compound (CsX) may be formed prior to forming the phosphor layer made of the phosphor.
  • This CsX phosphor layer (deposition film) is generally composed of a columnar crystal structure or an aggregate of spherical crystals, and the columnar crystallinity of the phosphor layer (deposition film) formed thereon can be further improved.
  • the relative density of the CsX vapor deposition film is in the range of 80% to 98%, it can also function as a stress relaxation layer and enhance the adhesion between the support and the phosphor layer.
  • additives such as an activator in the phosphor layer (deposition film) diffuse into the CsX phosphor layer (deposition film). The boundaries are not always clear.
  • the phosphor itself or the phosphor raw material mixture is used as an evaporation source and heated with a single resistance heater.
  • the evaporation source is prepared in advance to contain a desired concentration of activator.
  • the vapor deposition can be performed while supplying the CsX component to the evaporation source in consideration of the vapor pressure difference between the CsX component and the Tl or Eu component.
  • the phosphor layer does not contain a binder and is composed only of the phosphor, and there are voids between the columnar crystals of the phosphor.
  • the thickness of the phosphor layer varies depending on the characteristics of the intended radiation image conversion panel, the means and conditions of the vapor deposition method, but is usually in the range of 50 ⁇ m to 1 mm, preferably in the range of 200 ⁇ m to 700 ⁇ m. .
  • the vapor deposition method used in the present invention is not limited to the resistance heating method described above, and any other vapor deposition method may be used as long as it is performed under a medium vacuum.
  • the support does not necessarily have to serve also as a support for the radiation image conversion panel.
  • the phosphor layer is peeled off from the substrate and bonded to the support prepared separately by using an adhesive, A method of providing a phosphor layer on a support may be used.
  • the support (substrate) may not be attached to the phosphor layer.
  • the method for manufacturing a radiation image conversion panel according to the present invention uses a vapor deposition apparatus having an evaporation source and a support rotation mechanism in a vacuum vessel, and installs the support on the support rotation mechanism and rotates the support.
  • the phosphor layer is formed by a vapor deposition method including a step of vapor-depositing the phosphor material.
  • FIG. 1 is a schematic configuration diagram of a radiographic image conversion panel manufacturing apparatus 1 according to the present invention.
  • the radiation image conversion panel manufacturing apparatus 1 includes a vacuum container 2, and the vacuum container 2 includes a vacuum pump 3 that evacuates the inside of the vacuum container 2 and introduces the atmosphere. .
  • a support holder 5 that holds the support 4 is provided near the upper surface inside the vacuum vessel 2.
  • a phosphor layer is formed on the surface of the support 4 by a vapor deposition method.
  • a vapor deposition method a vapor deposition method, a sputtering method, a CVD method, an ion plating method, or the like can be used. In the present invention, the vapor deposition method is particularly preferable.
  • the support holder 5 is configured to hold the support 4 so that the surface of the support 4 on which the phosphor layer is formed faces the bottom surface of the vacuum vessel 2 and is parallel to the bottom surface of the vacuum vessel 2. It has become.
  • the support holder 5 is preferably provided with a heater (not shown) for heating the support 4.
  • a heater not shown for heating the support 4.
  • the adhesion of the support 4 to the support holder 5 is enhanced and the film quality of the phosphor layer is adjusted. Further, the adsorbate on the surface of the support 4 is removed and removed, and an impurity layer is prevented from being generated between the surface of the support 4 and the phosphor.
  • a heating medium or a mechanism (not shown) for circulating the heating medium may be provided as heating means. This means is suitable for the case where vapor deposition is performed while maintaining the temperature of the support 4 at a relatively low temperature of 50 to 150 ° C. during the vapor deposition of the phosphor.
  • a halogen lamp (not shown) may be provided as a heating means. This means is suitable for the case where vapor deposition is performed while maintaining the temperature of the support 4 at a relatively high temperature such as 150 ° C. or higher during the vapor deposition of the phosphor.
  • the support holder 5 is provided with a support rotating mechanism 6 that rotates the support 4 in the horizontal direction.
  • the support rotating mechanism 6 supports the support holder 5 and rotates the support 4 and a motor (not shown) that is disposed outside the vacuum vessel 2 and serves as a drive source for the support rotating shaft 7. Z).
  • evaporation sources 8 a and 8 b are arranged at positions facing each other on the circumference of a circle centering on a center line perpendicular to the support 4.
  • the distance between the support 4 and the evaporation sources 8a and 8b is preferably 100 to 1500 mm, more preferably 200 to 1000 mm.
  • the distance between the center line perpendicular to the support 4 and the evaporation sources 8a and 8b is preferably 100 to 1500 mm, more preferably 200 to 1000 mm.
  • the radiation image conversion panel manufacturing apparatus it is possible to provide a large number of three or more evaporation sources, and the respective evaporation sources may be arranged at equal intervals or at different intervals. May be. Further, the radius of a circle centered on the center line perpendicular to the support 4 can be arbitrarily determined.
  • the evaporation sources 8a and 8b contain the phosphor and heat it by a resistance heating method. Therefore, the evaporation sources 8a and 8b may be composed of an alumina crucible wound with a heater, or a boat or a heater made of a refractory metal. May be. Further, the method of heating the phosphor may be a method such as heating by an electron beam or heating by high frequency induction other than the resistance heating method, but in the present invention, it is relatively easy to handle, inexpensive, and In view of the fact that it can be applied to a large number of substances, a method in which a direct current is passed and resistance heating is performed, and a method in which a crucible is indirectly resistance heated with a surrounding heater is preferable.
  • the evaporation sources 8a and 8b may be molecular beam sources by a molecular source epitaxial method.
  • a shutter 9 that blocks a space from the evaporation sources 8a and 8b to the support 4 is provided between the evaporation sources 8a and 8b and the support 4 so as to be openable and closable in the horizontal direction.
  • substances other than the target substance attached to the surface of the phosphor can be prevented from evaporating at the initial stage of vapor deposition and adhering to the support 4.
  • the support 4 is attached to the support holder 5. Further, in the vicinity of the bottom surface of the vacuum vessel 2, evaporation sources 8 a and 8 b are arranged on the circumference of a circle centered on a center line perpendicular to the support 4.
  • the distance between the support 4 and the evaporation sources 8a and 8b is preferably 100 to 1500 mm, more preferably 200 to 1000 mm.
  • the distance between the center line perpendicular to the support 4 and the evaporation sources 8a and 8b is preferably 100 to 1500 mm, more preferably 200 to 1000 mm.
  • the inside of the vacuum vessel 2 is evacuated and adjusted to a desired degree of vacuum. Thereafter, the support holder 5 is rotated with respect to the evaporation sources 8a and 8b by the support rotation mechanism 6, and when the vacuum container 2 reaches a vacuum degree capable of vapor deposition, the phosphor is evaporated from the heated evaporation sources 8a and 8b. The phosphor is grown on the surface of the support 4 to a desired thickness.
  • the phosphor layer can be formed by performing the process of growing the phosphor on the surface of the support 4 in a plurality of times.
  • the vapor deposition target (support 4, protective layer, or intermediate layer) may be cooled or heated as necessary during vapor deposition.
  • the phosphor layer may be heat-treated.
  • reactive vapor deposition may be performed in which vapor deposition is performed by introducing a gas such as O 2 or H 2 as necessary.
  • the thickness of the phosphor layer to be formed is 50 ⁇ m to 2000 ⁇ m, preferably 50 ⁇ m to 1000 ⁇ m from the viewpoint of obtaining the effects of the present invention, although it varies depending on the purpose of use of the radiation image conversion panel and the type of the phosphor. More preferably, it is 100 ⁇ m to 800 ⁇ m.
  • the temperature of the support 4 on which the phosphor layer is formed is preferably set to room temperature (rt) to 300 ° C., more preferably 50 ° C. to 250 ° C.
  • the phosphor layer is physically or chemically protected on the surface of the phosphor layer opposite to the support 4 as necessary.
  • a protective layer may be provided.
  • the protective layer may be formed by directly applying a coating solution for the protective layer to the surface of the phosphor layer, or a protective layer separately formed in advance may be adhered to the phosphor layer.
  • the thickness of these protective layers is preferably 0.1 ⁇ m to 2000 ⁇ m.
  • the protective layer may be formed by laminating inorganic substances such as SiC, SiO 2 , SiN, and Al 2 O 3 by vapor deposition, sputtering, or the like.
  • the radiographic image conversion panel manufacturing apparatus 1 by providing the plurality of evaporation sources 8a and 8b, the overlapping portions of the vapor flows of the evaporation sources 8a and 8b are rectified, and the surface of the support 4 is rectified.
  • the crystallinity of the phosphor to be deposited can be made uniform.
  • the vapor flow is rectified at more locations, so that the crystallinity of the phosphor can be made uniform in a wider range.
  • the evaporation sources 8 a and 8 b are disposed on the circumference of a circle centering on the center line perpendicular to the support 4, the effect that the crystallinity becomes uniform due to the rectification of the vapor flow is provided. Can be obtained isotropically on the surface.
  • the phosphor can be uniformly deposited on the surface of the support 4 by depositing the phosphor while rotating the support 4 by the support rotating mechanism 6.
  • the phosphor layer is grown on the surface of the support 4 so that the crystallinity of the phosphor is uniform.
  • the sensitivity unevenness of the phosphor layer can be reduced, and the sharpness of the radiation image obtained from the radiation image conversion panel using the scintillator panel according to the present invention can be improved.
  • the crystallinity of the phosphor is made more uniform, and the radiation image The sharpness of the radiation image obtained from the conversion panel can be improved.
  • the support body holder 5 was provided with the support body rotation mechanism 6
  • this invention is not necessarily restricted to this, It vapor-deposits in the state which the support body holder 5 hold
  • the present invention is also applicable to the case where the phosphors from the evaporation sources 8a and 8b are deposited by moving the support 4 in the horizontal direction with respect to the evaporation sources 8a and 8b.
  • the radiation image conversion panel according to the present invention was obtained by the following method using the manufacturing apparatus shown in FIG.
  • the distance between the support and the evaporation source was adjusted to 400 mm, and the distance between the center line perpendicular to the support and the evaporation source was adjusted to 400 mm.
  • the inside of the vacuum vessel was once evacuated, Ar gas was introduced and the degree of vacuum was adjusted to 0.05 Pa, and then the temperature of the support was maintained at 200 ° C. while rotating the support at a speed of 10 rpm.
  • the phosphor 1 was deposited at a deposition mass rate of 0.008 mg / cm 2 ⁇ min in a state where the inside of the crucible was raised to a predetermined temperature by resistance heating and the support was not rotated, and the film thickness of the phosphor layer was The vapor deposition was terminated when the thickness reached 40 ⁇ m.
  • the phosphor 2 was deposited under the same conditions, and the deposition was terminated when the thickness of the phosphor layer reached 400 ⁇ m.
  • the phosphor layer was placed in a protective layer bag in dry air to obtain a comparative radiation image conversion panel 1-1 having a structure in which the phosphor layer was sealed.
  • Comparative Example 1-2 Among the production conditions of Comparative Example 1-1, the degree of vacuum was changed to 0.04 Pa and the vapor deposition mass rate was changed to 2.0 mg / cm 2 ⁇ min to obtain a radiation image conversion panel 1-2 of Comparative Example. It was.
  • X-rays with a tube voltage of 80 kVp were irradiated from the back surface (surface on which the phosphor layer was not formed) of the sample, and image data was detected with an FPD disposed on the phosphor, and the average signal value of the image was taken as the emission luminance. Then, the brightness of the radiation conversion panel of Comparative Example 1-1 was displayed as a relative value with the brightness set at 100. The higher this value, the higher the luminance and the better.
  • ⁇ Sharpness> Evaluation of sharpness
  • X-rays with a tube voltage of 80 kVp were irradiated to the radiation incident surface side of the FPD through a lead MTF chart, and image data was detected and recorded on a hard disk. Thereafter, the recording on the hard disk was analyzed by a computer, and the modulation transfer function MTF (MTF value at a spatial frequency of 1 cycle / mm) of the X-ray image recorded on the hard disk was used as an index of sharpness.
  • MTF modulation transfer function
  • the obtained radiation conversion panel was left to stand in an environment of 70 ° C./90% for 3 days, and the brightness deterioration range after being left was displayed as a relative value with the value before being left as 100.
  • Table 1 summarizes the results obtained from the above evaluations.
  • the radiographic image conversion panels of the present invention (Inventions 1-1 to 1-5) all have improved relative luminance values and relative MTF values. It has been seen.
  • the conventional radiographic image conversion panels (Comparative Examples 1-1 to 1-2) having a low degree of vacuum and a vapor deposition mass rate had poor relative luminance values and relative MTF values.
  • the radiation image conversion panels of the present invention (Inventions 1-1 to 1-5) were all excellent.
  • Comparative Example 2-1 (Production of radiation image conversion panel) Among the preparation conditions of Comparative Example 1-1, the phosphor 1 was changed to the phosphor 3 (only CsBr) and the phosphor 2 was changed to the phosphor 4 (CsBr: 0.003Eu) to obtain a radiation image conversion panel.
  • Comparative Example 2-2 Among the production conditions of Comparative Example 2-1, the degree of vacuum was changed to 0.04 Pa and the vapor deposition mass rate was changed to 2.0 mg / cm 2 ⁇ min to obtain a radiation image conversion panel 2-2 of Comparative Example. It was.
  • a 2 mm-thick lead disk is imprinted on each prepared radiation image conversion panel, X-ray with a tube voltage of 80 kVp is uniformly irradiated, and then a semiconductor laser beam (oscillation is provided from the surface side on which the phosphor layer is provided. Excitation is performed by scanning at a wavelength of 780 nm and a beam diameter of 100 ⁇ m. The stimulated emission emitted from each phosphor layer is received by a photoreceiver (photoelectron image multiplier of spectral sensitivity S-5), and the intensity is measured. This was defined as luminance, and the value of Comparative Example 2-1 was set as 100 and indicated as a relative value. The higher this value, the higher the luminance and the better.
  • X-ray with a tube voltage of 80 kVp-p is irradiated with 10 mR (distance from the tube to the panel: 1.5 m), and then a semiconductor laser beam (oscillation wavelength: 780 nm, beam diameter) : 100 ⁇ m) and excited to excite, read the CTF chart image as stimulated luminescence emitted from the stimulable phosphor layer, and photoelectrically convert it with a photodetector (photomultiplier) to obtain an image signal It was. Based on this signal value, the modulation transfer function (MTF) of the image was examined, and the value of Comparative Example 2-1 was set as 100 and indicated as a relative value. MTF is a value when the spatial frequency is 1 cycle / mm.
  • the obtained radiation image conversion panel was left to stand in an environment of 70 ° C./90% for 3 days, and the brightness deterioration range after being left was displayed as a relative value with the value before being left as 100.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Conversion Of X-Rays Into Visible Images (AREA)
  • Luminescent Compositions (AREA)

Abstract

L'invention porte sur un panneau de conversion d'image de rayonnement ayant une couche de phosphore formée par dépôt de vapeur et contenant un cristal de phosphore en colonne qui est principalement composé d'un phosphore d'halogénure de césium. L'invention porte également sur un procédé de fabrication du panneau de conversion d'image de rayonnement. Le panneau de conversion d'image de rayonnement est caractérisé en ce que la couche de phosphore est formée dans des conditions telles que le degré de vide est conservé dans la plage de 0,05 à 10 Pa et la vitesse de dépôt de masse est conservée dans la plage de 0,01 à 2,0 mg/cm2 min. Le panneau de conversion d'image de rayonnement a une sensibilité élevée (luminance élevée), une netteté élevée et une excellente stabilité au stockage.
PCT/JP2009/055044 2008-09-22 2009-03-16 Panneau de conversion d'image de rayonnement et son procédé de fabrication WO2010032504A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008242242 2008-09-22
JP2008-242242 2008-09-22

Publications (1)

Publication Number Publication Date
WO2010032504A1 true WO2010032504A1 (fr) 2010-03-25

Family

ID=42039351

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2009/055044 WO2010032504A1 (fr) 2008-09-22 2009-03-16 Panneau de conversion d'image de rayonnement et son procédé de fabrication

Country Status (1)

Country Link
WO (1) WO2010032504A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012098110A (ja) * 2010-11-01 2012-05-24 Toshiba Corp 放射線検出器及びその製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010010831A1 (en) * 2000-01-17 2001-08-02 Siemens Aktiengesellschaft Method for improving the optical separation of fluorescent layers
JP2005069992A (ja) * 2003-08-27 2005-03-17 Fuji Photo Film Co Ltd 放射線像変換パネルの製造方法
JP2005164380A (ja) * 2003-12-02 2005-06-23 Konica Minolta Medical & Graphic Inc 放射線像変換パネル
JP2007070646A (ja) * 2005-09-02 2007-03-22 Fujifilm Corp 放射線像変換パネルの製造方法および製造装置
JP2008051793A (ja) * 2006-03-02 2008-03-06 Canon Inc 放射線検出装置及びシンチレータパネル
JP2008116462A (ja) * 2007-11-07 2008-05-22 Konica Minolta Holdings Inc 放射線画像変換パネル及び放射線画像変換パネルの製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010010831A1 (en) * 2000-01-17 2001-08-02 Siemens Aktiengesellschaft Method for improving the optical separation of fluorescent layers
JP2005069992A (ja) * 2003-08-27 2005-03-17 Fuji Photo Film Co Ltd 放射線像変換パネルの製造方法
JP2005164380A (ja) * 2003-12-02 2005-06-23 Konica Minolta Medical & Graphic Inc 放射線像変換パネル
JP2007070646A (ja) * 2005-09-02 2007-03-22 Fujifilm Corp 放射線像変換パネルの製造方法および製造装置
JP2008051793A (ja) * 2006-03-02 2008-03-06 Canon Inc 放射線検出装置及びシンチレータパネル
JP2008116462A (ja) * 2007-11-07 2008-05-22 Konica Minolta Holdings Inc 放射線画像変換パネル及び放射線画像変換パネルの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012098110A (ja) * 2010-11-01 2012-05-24 Toshiba Corp 放射線検出器及びその製造方法

Similar Documents

Publication Publication Date Title
JP5720566B2 (ja) シンチレータパネル、シンチレータパネルの製造方法、放射線画像検出器および放射線画像検出器の製造方法
JP5862302B2 (ja) 放射線画像変換パネルとそれを用いた放射線画像検出器
JP5402933B2 (ja) 放射線画像変換パネル及びその製造方法
JP5889531B2 (ja) シンチレータパネルの製造方法
JP5050572B2 (ja) 放射線画像検出器
JP4725533B2 (ja) シンチレータパネル
JP5353886B2 (ja) 放射線シンチレータおよび放射線画像検出器
WO2010103917A1 (fr) Détecteur de rayonnement
WO2010050358A1 (fr) Panneau scintillateur, détecteur de rayonnements et procédés de production associés
WO2011065302A1 (fr) Support pour panneau scintillateur en forme de rouleau, panneau scintillateur et processus pour sa production, et détecteur d'image par rayonnement
JP2010127628A (ja) シンチレータパネルおよび放射線検出装置
JP2006098241A (ja) 放射線像変換パネル
WO2010032504A1 (fr) Panneau de conversion d'image de rayonnement et son procédé de fabrication
JP5597930B2 (ja) 放射線画像検出装置とその製造方法
JP5493577B2 (ja) 放射線画像検出装置
JP5267458B2 (ja) シンチレータパネル及び放射線イメージセンサ
JP5577644B2 (ja) 放射線画像検出装置およびその製造方法
WO2010026789A1 (fr) Scintillateur de rayonnement et capteur d'image de rayonnement
WO2009122809A1 (fr) Équipement de fabrication d'un panneau de conversion d'image radiographique et procédé de fabrication d'un panneau de conversion d'image radiographique
JP5347967B2 (ja) シンチレータプレート
JPWO2008108402A1 (ja) シンチレータプレート
JP5369906B2 (ja) 放射線像変換パネル、及び放射線像検出装置
WO2011086987A1 (fr) Capteur d'image de rayonnement et procédé pour sa fabrication
JP2008232781A (ja) シンチレータパネル及び放射線イメージセンサ
JP2016050873A (ja) シンチレータパネル及び放射線検出器ならびにシンチレータパネルの製造方法及び放射線検出器の製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09814349

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09814349

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP