WO2010026789A1 - Scintillateur de rayonnement et capteur d'image de rayonnement - Google Patents

Scintillateur de rayonnement et capteur d'image de rayonnement Download PDF

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Publication number
WO2010026789A1
WO2010026789A1 PCT/JP2009/053936 JP2009053936W WO2010026789A1 WO 2010026789 A1 WO2010026789 A1 WO 2010026789A1 JP 2009053936 W JP2009053936 W JP 2009053936W WO 2010026789 A1 WO2010026789 A1 WO 2010026789A1
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scintillator
radiation
layer
substrate
phosphor
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PCT/JP2009/053936
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English (en)
Japanese (ja)
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成人 後藤
惠民 笠井
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コニカミノルタエムジー株式会社
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/62—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing gallium, indium or thallium
    • C09K11/626—Halogenides
    • C09K11/628—Halogenides with alkali or alkaline earth metals
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
    • G21K2004/06—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens with a phosphor layer

Definitions

  • the present invention relates to a radiation scintillator that converts radiation into visible light, and a radiation image detector using the radiation scintillator.
  • radiographic images such as X-ray images have been widely used for diagnosis of medical conditions in the medical field.
  • radiographic images using intensifying screens and film systems have been developed as an imaging system that combines high reliability and excellent cost performance as a result of high sensitivity and high image quality in the long history.
  • the image information is so-called analog image information, and free image processing and instantaneous electric transmission cannot be performed like the digital image information that has been developed in recent years.
  • a radiation scintillator made of an X-ray phosphor having a characteristic of emitting light by radiation is used.
  • the luminous efficiency It is necessary to use a high radiation scintillator.
  • radiation scintillator emission efficiency is determined by the thickness of the scintillator layer (phosphor layer) and the X-ray absorption coefficient of the phosphor. The thicker the phosphor layer, the more the emitted light in the phosphor layer. Scattering occurs and the sharpness decreases. Therefore, when the sharpness necessary for the image quality is determined, the film thickness is determined.
  • CsI cesium iodide
  • Patent Document 2 a technique for reducing sensitivity unevenness by reducing a film thickness distribution and a coefficient of variation in film thickness in the phosphor layer.
  • Patent Document 2 Japanese Examined Patent Publication No. 54-35060 Japanese Patent Laying-Open No. 2005-091140 Physics Today, November 1997, page 24, John Laurans' paper "Amorphous Semiconductor User in Digital X-ray Imaging” SPIE, 1997, 32, p. 2, LL Antonuk's paper "Development of a High Resolution, Active Matrix, Flat-Panel Imager with Enhanced Fill Factor"
  • the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a radiation scintillator and a radiation image detector that have both high sharpness and brightness, and are excellent in impact resistance and adhesiveness. is there.
  • An input unit that converts radiation into visible light by the radiation scintillator according to any one of items 1 to 5, and an output unit that outputs image information based on the visible light converted by the radiation scintillator.
  • a radiation image detector characterized by comprising:
  • a radiation scintillator and a radiation image detector that are both high in sharpness and brightness, and excellent in impact resistance and adhesiveness.
  • FIG. 1 is a cross-sectional view showing a schematic configuration of a radiation scintillator 10.
  • 2 is an enlarged cross-sectional view of a part of the radiation scintillator 10.
  • FIG. 1 is a diagram illustrating a schematic configuration of a vapor deposition apparatus 1.
  • 1 is a partially broken perspective view showing a schematic configuration of a radiation image detector 100.
  • FIG. 2 is an enlarged cross-sectional view of an imaging panel 51.
  • FIG. It is a figure which shows the typical film thickness profile curve of a scintillator layer.
  • the present invention has a scintillator layer thickness profile curve obtained by having a scintillator layer containing a phosphor on a substrate, passing through the center of the scintillator layer surface, and taking a cross section perpendicular to the scintillator layer surface.
  • the number of maximum values is two or more.
  • a detector is obtained.
  • the scintillator layer (also referred to as “phosphor layer”) is a layer formed of a scintillator (phosphor) that emits fluorescence when irradiated with radiation.
  • the scintillator absorbs energy of incident radiation such as X-rays and emits electromagnetic waves having a wavelength of 300 nm to 800 nm, that is, electromagnetic waves (light) ranging from ultraviolet light to infrared light centering on visible light.
  • incident radiation such as X-rays
  • electromagnetic waves having a wavelength of 300 nm to 800 nm, that is, electromagnetic waves (light) ranging from ultraviolet light to infrared light centering on visible light.
  • electromagnetic waves light
  • the scintillator layer is obtained by having a scintillator layer containing a phosphor on a substrate, passing through the center of the surface of the scintillator layer, and taking a vertical cross section with the longest length to cut out the surface of the scintillator layer.
  • the number of maximum values in the film thickness profile curve is 2 or more.
  • the center of the surface of the scintillator layer is the center of gravity of the surface of the scintillator layer. For example, when the shape of the surface of the scintillator layer is square or rectangular, it is the intersection of diagonal lines.
  • the film thickness profile curve for example, when the scintillator layer surface has a square or rectangular shape, a diagonal line is taken, and the film thickness of the phosphor layer is measured at intervals of 5 mm along the diagonal line.
  • the method for measuring the film thickness is not limited, but in the present invention, the film thickness was determined by an eddy current film thickness meter (Fischer Instruments).
  • a film thickness profile curve was obtained by plotting the measurement points on the diagonal line on the X axis and the film thickness of the phosphor layer on the Y axis.
  • the number of measurement points may be a necessary and sufficient number for obtaining a smooth film thickness profile curve. Usually, an interval of 5 mm is sufficient, but if necessary, measurement may be performed at a shorter interval.
  • the film thickness profile curve obtained for at least one diagonal line it is necessary that there are two or more maximum values in the film thickness profile curve obtained for at least one diagonal line, but there are two or more maximum values in the film thickness profile curves obtained for all the diagonal lines.
  • the shape of the scintillator layer surface is a circle
  • the film thickness of the phosphor layer is measured at intervals of 5 mm along the diameter to form a film thickness profile curve.
  • the film thickness of the phosphor layer is measured at intervals of 5 mm along the middle line to form a film thickness profile curve.
  • the number of the maximum values is preferably 2 to 20, more preferably 3 to 17, and more preferably 5 to 15 in order to improve impact resistance and adhesion. Is particularly preferable.
  • the film thickness distribution of the scintillator layer is isotropic from the center to the end in order to improve impact resistance and adhesion.
  • FIG. 6 shows a typical film thickness profile curve.
  • the difference between the maximum maximum value and the minimum minimum value in the film thickness profile curve of the scintillator layer obtained from a cross section perpendicular to the scintillator layer surface is 5 to 50 ⁇ m, more preferably 5 to 40 ⁇ m. It is preferable to improve impact resistance and adhesion.
  • the maximum value is used as the local maximum value
  • the minimum value is used as the local minimum value.
  • the number of maximum values can be set to two or more by controlling the arrangement of evaporation sources used in the scintillator layer manufacturing apparatus. For example, it can be performed by arranging a plurality of evaporation sources on the circumference of the circle, but it is more preferable that the evaporation sources are also arranged at the center of the circle. More preferably, the plurality of evaporation sources are arranged on the circumference of a plurality of concentric circles having different radii.
  • coating method it can carry out by controlling the slit shape of the coating device used at the time of application
  • the thickness of the scintillator layer is preferably 100 to 1000 ⁇ m, more preferably 120 to 800 ⁇ m, and particularly preferably 140 to 600 ⁇ m.
  • the coefficient of variation of the filling rate is 20% or less, more preferably 10% or less, and particularly preferably 5% or less to improve luminance and sharpness, It is preferable from the viewpoint of improving impact properties and adhesiveness.
  • it can be performed by controlling the arrangement of the evaporation source used in the scintillator layer manufacturing apparatus. For example, it can be performed by arranging a plurality of evaporation sources on the circumference of the circle, but it is more preferable that the evaporation sources are also arranged at the center of the circle.
  • the plurality of evaporation sources are arranged on the circumference of a plurality of concentric circles having different radii.
  • it can carry out by controlling the slit shape of the coating device used at the time of application
  • the filling rate of the scintillator layer is preferably 75 to 90%, more preferably 77 to 88%, and particularly preferably 79 to 85%.
  • the filling rate means a value obtained by dividing the actual mass of the scintillator layer by the theoretical density and the apparent volume.
  • the degree of filling of the scintillator layer can be controlled by controlling the substrate temperature at the time of vapor deposition, or controlling the degree of vacuum by adjusting the vapor deposition rate or the amount of introduction of a carrier gas such as Ar. In the case of the coating method, the ratio between the phosphor and the binder can be adjusted, or the temperature, pressure, and speed during calendering can be adjusted.
  • Scintillator layer As a material for forming the scintillator layer, various known phosphor materials can be used, but the rate of change from X-ray to visible light is relatively high, and the phosphor can be easily formed into a columnar crystal structure by vapor deposition. For this reason, cesium iodide (CsI) is preferable because scattering of the emitted light in the crystal is suppressed by the light guide effect and the thickness of the scintillator layer (phosphor layer) can be increased.
  • CsI cesium iodide
  • CsI alone has low luminous efficiency
  • various activators are added.
  • a mixture of CsI and sodium iodide (NaI) at an arbitrary molar ratio can be mentioned.
  • CsI as disclosed in Japanese Patent Application Laid-Open No. 2001-59899 is deposited, and indium (In), thallium (Tl), lithium (Li), potassium (K), rubidium (Rb), sodium (Na CsI containing an activating substance such as) is preferred.
  • CsI scintillator layer containing thallium an additive containing one or more kinds of thallium compounds and cesium iodide are preferably used.
  • Thallium activated cesium iodide (CsI: Tl) is preferable because it has a broad emission wavelength from 400 nm to 750 nm.
  • thallium compound as an additive containing one or more kinds of thallium compounds, various thallium compounds (compounds having oxidation numbers of + I and + III) can be used.
  • a preferable thallium compound is thallium bromide (TlBr), thallium chloride (TlCl), thallium fluoride (TlF, TlF 3 ), or the like.
  • the melting point of the thallium compound is preferably in the range of 400 to 700 ° C. from the viewpoint of luminous efficiency.
  • fusing point is melting
  • the molecular weight of the thallium compound is preferably in the range of 206 to 300.
  • the content of the additive is desirably an optimum amount according to the target performance and the like, but is 0.001 mol% to 50 mol%, more preferably 0.1 to 0.1% with respect to the content of cesium iodide. It is preferable that it is 10.0 mol%.
  • An alkali metal halide phosphor represented by the formula is preferably exemplified.
  • M I represents at least one alkali metal selected from the group consisting of Li, Na, K, Rb and Cs
  • M II represents Be, Mg, Ca, Sr, Ba, Ni, Cu, Zn and at least one rare earth element or trivalent metal selected from the group consisting cd
  • M III is Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy
  • Ho represents at least one rare earth element or trivalent metal selected from the group consisting of Er, Tm, Yb, Lu, Al, Ga and In.
  • X, X ′ and X ′′ each represent at least one halogen selected from the group consisting of F, Cl, Br and I
  • A represents Y, Ce, Pr, Nd, Sm, Eu, Gd
  • a, b, and z represent Respective numerical values are in the range of 0 ⁇ a ⁇ 0.5, 0 ⁇ b ⁇ 0.5, and 0 ⁇ z ⁇ 1.0.
  • M I preferably contains at least Cs
  • X preferably contains at least I
  • A is particularly preferably Tl or Na.
  • . z is preferably a numerical value in the range of 1 ⁇ 10 ⁇ 4 ⁇ z ⁇ 0.1.
  • rare earth activated alkaline earth metal fluoride halide phosphors are also preferred.
  • M II is Ba, at least one rare earth metal selected from the group consisting of Sr and Ca, Ln is Ce, Pr, Sm, Eu, Tb, Dy, Ho, Nd, Er, Tm And at least one rare earth element selected from the group consisting of Yb.
  • X represents at least one halogen selected from the group consisting of Cl, Br and I.
  • Z represents a numerical value within a range of 0 ⁇ z ⁇ 0.2.
  • Ba preferably accounts for more than half.
  • Ln is particularly preferably Eu or Ce.
  • LnTaO 4 (Nb, Gd), Ln 2 SiO 5 : Ce, LnOX: Tm (Ln is a rare earth element), Gd 2 O 2 S: Tb, Gd 2 O 2 S: Pr, Ce, ZnWO 4 , LuAlO 3 : Ce, Gd 3 Ga 5 O 12 : Cr, Ce, HfO 2 and the like can be mentioned.
  • a scintillator layer is provided on a first substrate by a vapor deposition method through a reflective layer or a protective layer, and then a pixel composed of a photosensor and a TFT is formed on the second substrate.
  • a radiation image detector may be formed by adhering or closely adhering to a photoelectric conversion panel in which a photoelectric conversion element portion formed in a two-dimensional shape is formed, or a pixel composed of a photosensor and a TFT is formed in a two-dimensional shape on a substrate.
  • a scintillator layer may be provided directly or via a protective layer by a vapor deposition method to form a radiation image detector.
  • the radiation scintillator of the present invention preferably has a reflective layer provided on the substrate and a protective layer provided on the reflective layer.
  • the thickness of the protective layer is preferably 0.2 to 5.0 ⁇ m, more preferably 0.5 to 4.0 ⁇ m, in view of obtaining sufficient storage characteristics and suppressing light scattering. It is particularly preferably 7 to 3.5 ⁇ m.
  • organic resin is preferably used for the protective layer.
  • organic resin include polyurethane, vinyl chloride copolymer, vinyl chloride-vinyl acetate copolymer, vinyl chloride-vinylidene chloride copolymer, vinyl chloride.
  • -Acrylonitrile copolymer butadiene-acrylonitrile copolymer, polyamide resin, polyvinyl acetal, polyester, cellulose derivative (nitrocellulose, etc.), polyimide, polyamide, polyparaxylylene, styrene-butadiene copolymer, various synthetic rubbers Examples thereof include resins, phenol resins, epoxy resins, urea resins, melamine resins, phenoxy resins, silicon resins, acrylic resins, urea formamide resins, and the like.
  • polyurethane polyester, vinyl chloride copolymer, polyvinyl butyral, nitrocellulose, polyimide, and polyparaxylylene.
  • the substrate temperature is 150 ° C. to 250 ° C.
  • the protective layer contains an organic resin having a glass transition temperature of ⁇ 20 ° C. to 45 ° C.
  • the protective layer effectively functions as an adhesive layer.
  • Solvents used for preparing the protective layer include lower alcohols such as methanol, ethanol, n-propanol and n-butanol, hydrocarbons containing chlorine atoms such as methylene chloride and ethylene chloride, ketones such as acetone, methyl ethyl ketone and methyl isobutyl ketone, toluene , Aromatic compounds such as benzene, cyclohexane, cyclohexanone, xylene, esters of lower fatty acids and lower alcohols such as methyl acetate, ethyl acetate, butyl acetate, ethers such as dioxane, ethylene glycol monoethyl ester, ethylene glycol monomethyl ester and the like Can be mentioned.
  • lower alcohols such as methanol, ethanol, n-propanol and n-butanol
  • hydrocarbons containing chlorine atoms such as methylene chloride and ethylene chloride
  • the protective layer is preferably a light absorption layer, and the maximum absorption wavelength is preferably 560 to 650 nm.
  • the protective layer preferably contains at least one of a pigment and a dye so that the maximum absorption wavelength is in the range of 560 to 650 nm.
  • the protective layer preferably contains a dispersant and the like in addition to the organic resin.
  • a dispersant having a maximum absorption wavelength between 560 and 650 nm
  • known ones described in various documents can be used in addition to commercially available ones.
  • colorant those having absorption in the wavelength range of 560 to 650 nm are preferable, and as the colorant, purple to blue organic or inorganic colorants are preferably used.
  • purple to blue organic colorants are purple: dioxazine, blue: phthalocyanine blue, indanthrene blue, and the like.
  • Zabon First Blue 3G manufactured by Hoechst
  • Estrol Brill Blue N- 3RL manufactured by Sumitomo Chemical Co., Ltd.
  • Sumiacryl Blue F-GSL manufactured by Sumitomo Chemical Co., Ltd.
  • D & C Blue No. 1 made by National Aniline
  • Spirit Blue made by Hodogaya Chemical Co., Ltd.
  • purple-blue-blue-green inorganic colorants include ultramarine blue, cobalt blue, cerulean blue, chromium oxide, and TiO 2 —ZnO—CoO—NiO pigments, but the present invention is not limited thereto.
  • Preferred as the colorant is a metal phthalocyanine pigment.
  • metal phthalocyanine pigments include copper phthalocyanine.
  • other metal-containing phthalocyanine pigments such as those based on zinc, cobalt, iron, nickel, and other such metals can be used as long as the maximum absorption wavelength is in the range of 570 to 650 nm.
  • Suitable phthalocyanine pigments may be unsubstituted or substituted (eg, with one or more alkyl, alkoxy, halogen such as chlorine, or other substituents typical of phthalocyanine pigments).
  • the crude phthalocyanine can be prepared by any of several methods known in the art, but preferably a metal donor, nitrogen donor (eg urea or phthalonitrile itself) of phthalic anhydride, phthalonitrile or derivatives thereof, Preferably, it can be produced by reacting in an organic solvent at any time in the presence of a catalyst.
  • the pigment is preferably used dispersed in the organic resin.
  • Various dispersants can be used according to the organic resin and the pigment to be used.
  • dispersant examples include phthalic acid, stearic acid, caproic acid, and lipophilic surfactant.
  • a known dispersion technique used in ink production or toner production can be used.
  • the disperser include a sand mill, an attritor, a pearl mill, a super mill, a ball mill, an impeller, a disperser, a KD mill, a colloid mill, a dynatron, a three-roll mill, and a pressure kneader. Details are described in "Latest Pigment Application Technology" (CMC Publishing, 1986).
  • the protective layer is formed by applying and drying a resin dissolved in a solvent, or by a CVD method.
  • the substrate according to the present invention is a plate that is radiolucent and can carry a scintillator layer, and various kinds of glass, polymer materials, metals, and the like can be used.
  • plate glass such as quartz, borosilicate glass, chemically tempered glass, ceramic substrate such as sapphire, silicon nitride, silicon carbide, semiconductor substrate such as silicon, germanium, gallium arsenide, gallium phosphide, gallium nitrogen, and cellulose acetate film , Polyester film, polyethylene terephthalate film, polyamide film, polyimide film, triacetate film, polycarbonate film, polymer film (plastic film) such as carbon fiber reinforced resin sheet, metal sheet such as aluminum sheet, iron sheet, copper sheet or the metal A metal sheet having an oxide coating layer can be used.
  • ceramic substrate such as sapphire, silicon nitride, silicon carbide, semiconductor substrate such as silicon, germanium, gallium arsenide, gallium phosphide, gallium nitrogen, and cellulose acetate film
  • Polyester film polyethylene terephthalate film, polyamide film, polyimide film, triacetate film, polycarbonate film, polymer film (plastic film) such as carbon fiber reinforced resin sheet, metal sheet such
  • a polymer film containing polyimide or polyethylene naphthalate is suitable for forming a columnar scintillator by a vapor phase method using cesium iodide as a raw material.
  • the substrate is preferably a flexible polymer film having a thickness of 50 to 500 ⁇ m.
  • the “substrate having flexibility” means a substrate having an elastic modulus (E120) at 120 ° C. of 1000 to 6000 N / mm 2 , and a polymer film containing polyimide or polyethylene naphthalate as such a substrate. Is preferred.
  • the “elastic modulus” is the slope of the stress with respect to the strain amount in a region where the strain indicated by the standard line of the sample conforming to JIS-C2318 and the corresponding stress have a linear relationship using a tensile tester. Is what we asked for. This is a value called Young's modulus, and in the present invention, this Young's modulus is defined as an elastic modulus.
  • the substrate used in the present invention preferably has an elastic modulus (E120) at 120 ° C. of 1000 N / mm 2 to 6000 N / mm 2 as described above. More preferably 1200N / mm2 ⁇ 5000N / mm 2 .
  • a polymer film containing polyimide or polyethylene naphthalate is preferable as described above.
  • the reflective layer is for reflecting the light emitted from the scintillator of the scintillator layer to increase the light extraction efficiency.
  • the reflective layer is preferably formed of a material containing any element selected from the element group consisting of Al, Ag, Cr, Cu, Ni, Ti, Mg, Rh, Pt, and Au.
  • a metal thin film made of the above elements for example, an Ag film, an Al film, or the like. Two or more such metal thin films may be formed.
  • the lower layer is preferably a layer containing Cr from the viewpoint of improving the adhesion to the substrate.
  • a layer made of a metal oxide such as SiO 2 or TiO 2 may be provided in this order on the metal thin film to further improve the reflectance.
  • the reflection layer reflects the light from the scintillator layer as described above, and at the same time is transparent to radiation.
  • the reflective layer is preferably a metal thin film that is radiation transmissive and reflects predetermined light (light emitted from the scintillator) as described above.
  • the thickness of the reflective layer is preferably 0.005 to 0.3 ⁇ m, more preferably 0.01 to 0.2 ⁇ m, from the viewpoint of emission light extraction efficiency.
  • an intermediate layer may be provided between the substrate and the reflective layer.
  • the intermediate layer is preferably a layer containing a resin.
  • the resin include polyurethane, vinyl chloride copolymer, vinyl chloride-vinyl acetate copolymer, vinyl chloride-vinylidene chloride copolymer, vinyl chloride-acrylonitrile copolymer, butadiene-acrylonitrile copolymer, Polyamide resin, polyvinyl acetal, polyester, cellulose derivative (nitrocellulose, etc.), polyimide, polyamide, polyparaxylylene, styrene-butadiene copolymer, various synthetic rubber resins, phenol resin, epoxy resin, urea resin, melamine resin , Phenoxy resin, silicon resin, acrylic resin, urea formamide resin, and the like.
  • the thickness of the intermediate layer is preferably 1.0 ⁇ m to 30 ⁇ m, more preferably 2.0 ⁇ m to 25 ⁇ m, and particularly preferably 5.0 ⁇ m to 20 ⁇ m.
  • the moisture-resistant protective layer mainly focuses on protecting the scintillator layer. That is, cesium iodide (CsI) absorbs water vapor in the air and deliquesces when it is exposed with high hygroscopicity, and the main purpose is to prevent this.
  • CsI cesium iodide
  • the moisture-resistant protective layer can be formed using various materials.
  • a polyparaxylylene film is formed by a CVD method. That is, a polyparaxylylene film can be formed on the entire surface of the scintillator and the substrate to form a moisture-resistant protective layer.
  • the moisture-resistant protective layer may be formed by directly applying a coating solution for the moisture-resistant protective layer to the surface of the phosphor layer, and a moisture-resistant protective layer separately formed in advance is adhered to or wrapped around the phosphor layer. You may seal by.
  • the moisture-resistant protective layer may be formed by laminating inorganic substances such as SiC, SiO 2 , SiN, and Al 2 O 3 by vapor deposition or sputtering.
  • the thickness of the moisture-resistant protective layer is preferably 12 ⁇ m or more and 100 ⁇ m or less, more preferably 20 ⁇ m in consideration of the formation of voids, moisture resistance protection of the scintillator (phosphor) layer, sharpness, moisture resistance, workability, etc. As mentioned above, 60 micrometers or less are preferable.
  • the haze ratio is preferably 3% or more and 40% or less, and more preferably 3% or more and 10% or less in consideration of sharpness, radiation image unevenness, manufacturing stability, workability, and the like. preferable.
  • a haze rate shows the value measured by Nippon Denshoku Industries Co., Ltd. NDH 5000W. The required haze ratio is appropriately selected from commercially available polymer films and can be easily obtained.
  • the light transmittance of the moisture-resistant protective layer is preferably 70% or more at 550 nm in consideration of photoelectric conversion efficiency, scintillator emission wavelength, etc., but a film having a light transmittance of 99% or more is difficult to obtain industrially. Substantially 99 to 70% is preferable.
  • the moisture permeability of the moisture-resistant protective layer is preferably 50 g / m 2 ⁇ day (40 ° C./90% RH) (measured according to JIS Z0208) or less, more preferably 10 g / m 2 taking into account the protection and deliquescence properties of the scintillator layer.
  • m 2 ⁇ day (40 ° C./90% RH) (measured in accordance with JIS Z0208) or less is preferable, but a film having a moisture permeability of 0.01 g / m 2 ⁇ day (40 ° C./90% RH) or less is industrial.
  • it is substantially 0.01 g / m 2 ⁇ day (40 ° C, 90% RH) or more, 50 g / m 2 ⁇ day (40 ° C., 90% RH) (measured according to JIS Z0208) ) Or less, more preferably 0.1 g / m 2 ⁇ day (40 ° C./90% RH) or more, 10 g / m 2 ⁇ day (40 ° C./90% RH) (measured according to JIS Z0208) or less .
  • FIG. 1 is a cross-sectional view showing a schematic configuration of the radiation scintillator 10.
  • FIG. 2 is an enlarged cross-sectional view of the radiation scintillator 10.
  • FIG. 3 is a drawing showing a schematic configuration of a radiation scintillator vapor deposition apparatus 61.
  • the radiation scintillator deposition apparatus 61 includes a vacuum container 62, and the vacuum container 62 includes a vacuum pump 66 that exhausts the inside of the vacuum container 62 and introduces the atmosphere.
  • a substrate holder 64 for holding the substrate 1 is provided near the upper surface inside the vacuum vessel 62.
  • the substrate 1 can be arbitrarily selected from known materials as a support for a conventional radiation scintillator.
  • a quartz glass sheet, a metal sheet made of aluminum, iron, tin, chromium, or the like is used as the substrate 1 of this embodiment.
  • a fiber reinforced sheet is preferred.
  • the substrate 1 may have a resin layer (intermediate layer) in order to make the surface smooth.
  • the resin layer preferably contains a compound such as polyimide, polyethylene phthalate, paraffin, graphite, and the film thickness is preferably about 5 ⁇ m to 50 ⁇ m.
  • This resin layer may be provided on the front surface of the substrate 1 or on the back surface.
  • means for providing a resin layer (intermediate layer) on the surface of the substrate 1 there are means such as a bonding method and a coating method.
  • the laminating method is performed using heating and a pressure roller, the heating condition is about 80 to 150 ° C., the pressing condition is 4.90 ⁇ 10 to 2.94 ⁇ 102 N / cm, and the conveyance speed is 0.1 to 2 0.0 m / s is preferable.
  • a phosphor layer is formed on the surface of the substrate 1 by a vapor deposition method.
  • a vapor deposition method a vapor deposition method, a sputtering method, a CVD method, an ion plating method, or the like can be used. In the present invention, the vapor deposition method is particularly preferable.
  • the substrate holder 64 is configured to hold the substrate 1 so that the surface of the substrate 1 on which the phosphor layer is formed faces the bottom surface of the vacuum vessel 62 and is parallel to the bottom surface of the vacuum vessel 62. .
  • the substrate holder 64 is preferably provided with a heater (not shown) for heating the substrate 1.
  • a heater not shown for heating the substrate 1.
  • the adhesion of the substrate 1 to the substrate holder 64 is enhanced and the film quality of the phosphor layer is adjusted. Further, the adsorbate on the surface of the substrate 1 is removed and removed, and an impurity layer is prevented from being generated between the surface of the substrate 1 and a phosphor to be described later.
  • a heating medium or a mechanism (not shown) for circulating the heating medium may be provided as heating means. This means is suitable for the case where vapor deposition is performed while keeping the temperature of the substrate 1 at a relatively low temperature such as 50 to 150 ° C.
  • a halogen lamp (not shown) may be provided as a heating means. This means is suitable for vapor deposition while keeping the temperature of the substrate 1 at a relatively high temperature such as 150 ° C. or higher during vapor deposition of the phosphor.
  • the substrate holder 64 is provided with a substrate rotation mechanism 65 that rotates the substrate 1 in the horizontal direction.
  • the substrate rotation mechanism 65 includes a substrate rotation shaft 67 that supports the substrate holder 64 and rotates the substrate 1 and a motor (not shown) that is disposed outside the vacuum vessel 62 and serves as a drive source for the substrate rotation shaft 67. ing.
  • evaporation sources 63a and 63b are arranged at positions facing each other on the circumference of a circle with the center line perpendicular to the substrate 1 as the center.
  • the distance between the substrate 1 and the evaporation sources 63a and 63b is preferably 100 mm to 1500 mm, and more preferably 200 mm to 1000 mm.
  • the distance between the center line perpendicular to the substrate 1 and the evaporation sources 63a and 63b is preferably 100 mm to 1500 mm, more preferably 200 mm to 1000 mm.
  • the scintillator panel manufacturing apparatus it is possible to provide a large number of three or more evaporation sources, and the respective evaporation sources may be arranged at equal intervals or at different intervals. Good. Further, the radius of the circle centered on the center line perpendicular to the substrate 1 can be arbitrarily determined. In the present invention, it is preferable that a plurality of evaporation sources be arranged on the circumference of the circle, but it is more preferable that the evaporation sources are also arranged at the center of the circle.
  • the number of local maximum values in the film thickness profile curve of the scintillator layer is set to two or more even when used for a large panel such as an FPD, and the fluorescence of the scintillator layer
  • the body filling rate distribution can be 20% or less, and the impact resistance and adhesion can be improved.
  • the number of local maximum values in the film thickness profile curve of the scintillator layer is set to two or more even when used for a large-sized panel such as an FPD.
  • the body filling rate distribution can be 20% or less, and the impact resistance and adhesion can be improved.
  • the evaporation sources 63a and 63b may be composed of an alumina crucible wound with a heater, or a boat or a heater made of a refractory metal. You may do it.
  • a method of heating the phosphor described later may be a method such as heating by an electron beam or heating by high frequency induction, but in the present invention, the handling is relatively simple and inexpensive, and In view of the fact that it can be applied to a large number of substances, a method in which a current is directly applied and resistance is heated, and a method in which a crucible is indirectly resistance-heated with a surrounding heater is preferable.
  • the evaporation sources 63a and 63b may be molecular beam sources by a molecular source epitaxial method.
  • a shutter 68 that blocks a space from the evaporation sources 63a and 63b to the substrate 1 is provided between the evaporation sources 63a and 63b and the substrate 1 so as to be openable and closable in the horizontal direction.
  • the sources 63a and 63b it is possible to prevent substances other than the target substance attached to the surface of the phosphor described later from evaporating at the initial stage of vapor deposition and adhering to the substrate 1.
  • the substrate 1 is attached to the substrate holder 64. Further, in the vicinity of the bottom surface of the vacuum vessel 62, the evaporation sources 63a and 63b are arranged on the circumference of a circle with the center line perpendicular to the substrate 1 as the center.
  • the distance between the substrate 1 and the evaporation sources 63a and 63b is preferably 100 mm to 1500 mm, and more preferably 200 mm to 1000 mm.
  • the distance between the center line perpendicular to the substrate 1 and the evaporation sources 63a and 63b is preferably 100 mm to 1500 mm, more preferably 200 mm to 1000 mm.
  • under vacuum atmosphere means under a pressure atmosphere of 100 Pa or less, and preferably under a pressure atmosphere of 0.1 Pa or less.
  • an inert gas such as argon is introduced into the vacuum vessel 62, and the inside of the vacuum vessel 62 is maintained in a vacuum atmosphere of 0.001 to 5 Pa.
  • the substrate holder 64 is rotated with respect to the evaporation sources 63a and 63b by the substrate rotation mechanism 65, and when the vacuum container 62 reaches a vacuum degree capable of vapor deposition, phosphors described later are evaporated from the heated evaporation sources 63a and 63b. Then, a phosphor described later is grown on the surface of the substrate 1 to a desired thickness.
  • the phosphor layer can be formed by performing a process of growing a phosphor described later on the surface of the substrate 1 in a plurality of times.
  • the vapor deposition target (substrate 1, protective layer or intermediate layer) may be cooled or heated as necessary during vapor deposition.
  • the phosphor layer may be heat-treated.
  • reactive vapor deposition may be performed in which vapor deposition is performed by introducing a gas such as O 2 or H 2 as necessary.
  • the temperature of the substrate 1 on which the phosphor layer is formed is preferably set to room temperature (rt) to 300 ° C., more preferably 50 to 250 ° C.
  • the phosphor is physically or chemically formed on the surface of the phosphor layer opposite to the substrate 1 or on both sides as necessary.
  • a moisture-resistant protective layer for protecting the layer may be provided.
  • the moisture-resistant protective layer may be formed by directly applying a coating solution for the moisture-resistant protective layer to the surface of the phosphor layer, and a moisture-resistant protective layer separately formed in advance is adhered to or wrapped around the phosphor layer. You may seal by.
  • the moisture-resistant protective layer may be formed by laminating inorganic substances such as SiC, SiO 2 , SiN, and Al 2 O 3 by vapor deposition or sputtering.
  • the overlapping portions of the vapor sources 63a, 63b are rectified and deposited on the surface of the substrate 1 to be described later.
  • the crystallinity of the phosphor to be made can be made uniform.
  • the vapor flow is rectified at more points, so that the crystallinity of the phosphor described later can be made uniform in a wider range.
  • the evaporation sources 63a and 63b are disposed on the circumference of a circle centered on the center line perpendicular to the substrate 1, the effect that the crystallinity becomes uniform due to the rectification of the vapor flow is obtained. Can be obtained isotropically.
  • the phosphor described later can be uniformly deposited on the surface of the substrate 1 by depositing the phosphor described later while rotating the substrate 1 by the rotation mechanism 65.
  • the evaporator 61 described above can be suitably used.
  • a method for producing the radiation scintillator 10 using the evaporator 61 will be described.
  • the intermediate layer 2 can be formed on one surface of the substrate 1 by extrusion coating.
  • a matting agent or filler may be added as necessary to control the surface properties and Young's modulus of the intermediate layer.
  • a metal thin film (Al film, Ag film, etc.) as the reflective layer 3 is formed on the surface of the substrate 1 provided with the intermediate layer 2 by sputtering.
  • Al film, Ag film, etc. a metal thin film as the reflective layer 3 is formed on the surface of the substrate 1 provided with the intermediate layer 2 by sputtering.
  • Various types of films in which an Al film is sputter-deposited on a polymer film are available on the market, and these films can also be used.
  • the protective layer 4 is formed by applying and drying a composition obtained by dispersing and dissolving a colorant and an organic resin in the organic solvent.
  • the substrate 1 provided with the intermediate layer 2, the reflection layer 3, and the protective layer 4 is attached to the substrate holder 64, and the evaporation source 63 is filled with a powdery mixture containing cesium iodide and thallium iodide. (Preparation process).
  • the distance between the evaporation source 63 and the substrate 1 is set to 100 to 1500 mm, and the vapor deposition process described later is performed while remaining within the set value range.
  • under vacuum atmosphere means under a pressure atmosphere of 100 Pa or less, and preferably under a pressure atmosphere of 0.1 Pa or less.
  • an inert gas such as argon is introduced into the vacuum vessel 62, and the inside of the vacuum vessel 62 is maintained in a vacuum atmosphere of 0.1 Pa to 5 Pa.
  • an inert gas such as argon is introduced into the vacuum vessel 62, and the inside of the vacuum vessel 62 is maintained in a vacuum atmosphere of 0.1 Pa to 5 Pa.
  • the heater of the substrate holder 64 and the motor of the rotation mechanism 65 are driven, and the substrate 1 attached to the substrate holder 64 is rotated while being heated while facing the evaporation source 63.
  • a current is passed from the electrode to the evaporation source 63, and the mixture containing cesium iodide and thallium iodide is heated at about 700 to 800 ° C. for a predetermined time to evaporate the mixture.
  • innumerable columnar crystals 5a are sequentially grown on the surface of the substrate 1 to form a scintillator layer 5 having a desired thickness (evaporation process).
  • the radiation scintillator 10 which concerns on this invention can be manufactured.
  • the temperature for heating the vapor deposition source is preferably 500 ° C. to 800 ° C., and particularly preferably 630 ° C. to 750 ° C.
  • the substrate temperature is preferably 100 ° C. to 250 ° C., more preferably 150 ° C. to 250 ° C. By setting the substrate temperature within this range, the shape of the columnar crystal is improved and the luminance characteristics are improved.
  • the moisture resistant protective layer 6 is preferably formed by applying and drying a composition in which an organic resin is dispersed and dissolved in the organic solvent on the scintillator layer. You may add a coloring agent and a mat agent to the said composition as needed. Further, the scintillator layer may be sealed with a sealing film formed by applying and drying a composition in which an organic resin is dispersed and dissolved on a support (PET, PEN, aramid, etc.).
  • FIG. 4 is a partially broken perspective view showing a schematic configuration of the radiation image detector 100.
  • FIG. 5 is an enlarged cross-sectional view of the imaging panel 51.
  • the radiation image detector 100 includes an imaging panel 51, a control unit 52 that controls the operation of the radiation image detector 100, a rewritable dedicated memory (for example, a flash memory), and the like.
  • a memory unit 53 that is a storage unit that stores the output image signal
  • a power supply unit 54 that is a power supply unit that supplies power necessary to obtain the image signal by driving the imaging panel 51, and the like 55 is provided inside.
  • the housing 55 has a communication connector 56 for performing communication from the radiation image detector 100 to the outside as needed, an operation unit 57 for switching the operation of the radiation image detector 100, and completion of preparation for radiographic image capturing.
  • a display unit 58 indicating that a predetermined amount of image signal has been written in the memory unit 53 is provided.
  • the radiation image detector 100 is provided with the power supply unit 54 and the memory unit 53 for storing the image signal of the radiation image, and the radiation image detector 100 is detachable via the connector 56, the radiation image detector is provided. It can be set as the portable structure which can carry 100.
  • the imaging panel 51 includes a radiation scintillator 10 and an output substrate 20 that absorbs electromagnetic waves from the radiation scintillator 10 and outputs an image signal.
  • the radiation scintillator 10 is disposed on the radiation irradiation surface side and is configured to emit an electromagnetic wave corresponding to the intensity of incident radiation.
  • the output substrate 20 is provided on the surface opposite to the radiation irradiation surface of the radiation scintillator 10, and includes a diaphragm 20a, a photoelectric conversion element 20b, an image signal output layer 20c, and a substrate 20d in this order from the radiation scintillator 10 side. Yes.
  • the diaphragm 20a is for separating the radiation scintillator 10 from other layers.
  • the photoelectric conversion element 20 b includes a transparent electrode 21, a charge generation layer 22 that is excited by electromagnetic waves that have passed through the transparent electrode 21 to enter the light, and generates a charge, and a counter electrode 23 that is a counter electrode for the transparent electrode 21.
  • the transparent electrode 21, the charge generation layer 22, and the counter electrode 23 are arranged in this order from the diaphragm 20a side.
  • the transparent electrode 21 is an electrode that transmits an electromagnetic wave that is photoelectrically converted, and is formed using a conductive transparent material such as indium tin oxide (ITO), SnO 2 , or ZnO.
  • ITO indium tin oxide
  • SnO 2 SnO 2
  • ZnO ZnO
  • the charge generation layer 22 is formed in a thin film on one surface side of the transparent electrode 21 and contains an organic compound that separates charges by light as a compound capable of photoelectric conversion. Each of them contains a conductive compound as an electron acceptor. In the charge generation layer 22, when an electromagnetic wave is incident, the electron donor is excited to emit electrons, and the emitted electrons move to the electron acceptor, and charge, that is, holes in the charge generation layer 22. And electron carriers are generated.
  • examples of the conductive compound as the electron donor include a p-type conductive polymer compound.
  • examples of the p-type conductive polymer compound include polyphenylene vinylene, polythiophene, poly (thiophene vinylene), polyacetylene, polypyrrole, Those having a basic skeleton of polyfluorene, poly (p-phenylene) or polyaniline are preferred.
  • Examples of the conductive compound as the electron acceptor include an n-type conductive polymer compound.
  • the n-type conductive polymer compound those having a basic skeleton of polypyridine are preferable, and in particular, poly (p-pyridyl) Those having a basic skeleton of vinylene) are preferred.
  • the film thickness of the charge generation layer 22 is preferably 10 nm or more (especially 100 nm or more) from the viewpoint of securing the amount of light absorption, and is preferably 1 ⁇ m or less (particularly 300 nm or less) from the viewpoint that the electric resistance does not become too large. .
  • the counter electrode 23 is disposed on the opposite side of the surface of the charge generation layer 22 where the electromagnetic wave is incident.
  • the counter electrode 23 can be selected and used from, for example, a general metal electrode such as gold, silver, aluminum, and chromium, or the transparent electrode 21. Small (4.5 eV or less) metals, alloys, electrically conductive compounds and mixtures thereof are preferably used as electrode materials.
  • a buffer layer may be provided between each electrode (transparent electrode 21 and counter electrode 23) sandwiching the charge generation layer 22 so as to act as a buffer zone so that the charge generation layer 22 and these electrodes do not react.
  • the buffer layer include lithium fluoride and poly (3,4-ethylenedioxythiophene): poly (4-styrenesulfonate), 2,9-dimethyl-4,7-diphenyl [1,10] phenanthroline, and the like. Formed using.
  • the image signal output layer 20c performs accumulation of charges obtained by the photoelectric conversion element 20b and output of a signal based on the accumulated charges. Charge for accumulating the charges generated by the photoelectric conversion element 20b for each pixel.
  • the capacitor 24 is a storage element
  • the transistor 25 is an image signal output element that outputs the stored charge as a signal.
  • a TFT Thin Film Transistor
  • This TFT may be an inorganic semiconductor type used in a liquid crystal display or the like, or an organic semiconductor, and is preferably a TFT formed on a plastic film.
  • an amorphous silicon type is known, but in addition, it is made of FSA (Fluidic Self Assembly) technology developed by Alien Technology in the United States, that is, made of single crystal silicon.
  • FSA Fluid Self Assembly
  • a TFT may be formed on a flexible plastic film by arranging micro CMOS (Nanoblocks) on an embossed plastic film.
  • a TFT using an organic semiconductor as described in documents such as Lett, 771488 (1998), Nature, 403, 521 (2000) may be used.
  • the transistor 25 is preferably a TFT manufactured by the FSA technique and a TFT using an organic semiconductor, and a TFT using an organic semiconductor is particularly preferable. If a TFT is formed using this organic semiconductor, equipment such as a vacuum deposition apparatus is not required as in the case where a TFT is formed using silicon, and the TFT can be formed by utilizing printing technology or inkjet technology. Cost is low. Furthermore, since the processing temperature can be lowered, it can also be formed on a plastic substrate that is vulnerable to heat.
  • the transistor 25 accumulates electric charges generated in the photoelectric conversion element 20b and is electrically connected to a collecting electrode (not shown) serving as one electrode of the capacitor 24.
  • the capacitor 24 accumulates charges generated by the photoelectric conversion element 20 b and reads the accumulated charges by driving the transistor 25. That is, by driving the transistor 25, a signal for each pixel of the radiation image can be output.
  • the substrate 20d functions as a support for the imaging panel 51, and can be made of the same material as the substrate 1.
  • the radiation incident on the radiation image detector 100 enters the radiation from the radiation scintillator 10 side of the imaging panel 51 toward the substrate 20d side.
  • the radiation incident on the radiation scintillator 10 causes the scintillator layer 5 in the radiation scintillator 10 to absorb the energy of the radiation and emit an electromagnetic wave corresponding to the intensity thereof.
  • the electromagnetic wave incident on the output substrate 20 passes through the diaphragm 20 a and the transparent electrode 21 of the output substrate 20 and reaches the charge generation layer 22. Then, the electromagnetic wave is absorbed in the charge generation layer 22 and a hole-electron pair (charge separation state) is formed according to the intensity.
  • the generated charges are transported to different electrodes (transparent electrode film and conductive layer) by an internal electric field generated by application of a bias voltage by the power supply unit 54, and a photocurrent flows.
  • the holes carried to the counter electrode 23 side are accumulated in the capacitor 24 of the image signal output layer 20c.
  • the accumulated holes output an image signal when the transistor 25 connected to the capacitor 24 is driven, and the output image signal is stored in the memory unit 53.
  • Example 1 (Production of reflective layer) A reflective layer (0.02 ⁇ m) was formed by sputtering aluminum on a 125 ⁇ m-thick polyimide film (UPILEX-125S manufactured by Ube Industries).
  • Byron 200 manufactured by Toyobo Co., Ltd .: polyester resin, Tg: 67 ° C.
  • Hexamethylene diisocyanate 3 parts by mass Phthalocyanine blue
  • MEK Methyl ethyl ketone
  • This coating solution was applied to the aluminum reflective layer surface of the substrate by an extrusion coater so that the dry film thickness was 2.5 ⁇ m.
  • substrate rotation mechanism was installed.
  • the phosphor raw material (CsI: 0.03 Tlmol%) is filled in an evaporation source crucible as an evaporation material, and the eight evaporation source crucibles are located near the bottom surface inside the vacuum vessel and are perpendicular to the substrate. It was arranged on the circumference of a circle centered on. At this time, the distance between the substrate and the evaporation source was adjusted to 450 mm, and the distance between the center line perpendicular to the substrate and the evaporation source was adjusted to 300 mm.
  • the eight shielding plates are arranged on the line segment connecting the evaporation source and the center point of the surface of the substrate facing the evaporation source so that the height and position of the shielding plate are in contact with each other, The range of the incident angle when the phosphor is deposited on the substrate is limited.
  • four evaporation source crucibles were arranged on the circumference of a circle centered on the center line perpendicular to the substrate, near the bottom surface inside the vacuum vessel. At this time, the distance between the substrate and the evaporation source was adjusted to 450 mm, and the distance between the center line perpendicular to the substrate and the evaporation source was adjusted to 150 mm.
  • one evaporation source crucible was arranged in the vicinity of the bottom surface inside the vacuum vessel and at the center of a circle centered on the center line perpendicular to the substrate. Subsequently, the inside of the vacuum vessel was once evacuated, Ar gas was introduced and the degree of vacuum was adjusted to 0.02 Pa, and then the substrate temperature was maintained at 50 ° C. while rotating the substrate at a speed of 10 rpm. Next, the inside of the crucible is raised to a predetermined temperature by resistance heating, the phosphor is deposited, the substrate temperature is raised to 200 ° C., and the deposition is performed when the phosphor layer (CsI: Tl) film thickness becomes 450 ⁇ m. Ended.
  • CsI: Tl phosphor layer
  • sample 101 was manufactured in the same manner as the sample 101 except that the thickness of the scintillator layer was changed as shown in Table 1.
  • sample 101 was manufactured in the same manner as the sample 101 except that four evaporation source crucibles arranged on a circumference with a distance of 150 mm between the center line perpendicular to the substrate and the evaporation source were not used.
  • sample 105 In the preparation of the sample 101, the four evaporation source crucibles arranged on the circumference having a distance of 150 mm between the center line perpendicular to the substrate and the evaporation source were not used, and the center line perpendicular to the substrate was the center.
  • the sample 101 was manufactured in the same manner as the sample 101 except that one evaporation source crucible arranged at the center of the circle was not used.
  • sample 106 In the preparation of the sample 101, the eight evaporation source crucibles arranged on the circumference having a distance of 300 mm between the center line perpendicular to the substrate and the evaporation source were not used, and the center line perpendicular to the substrate and the evaporation source were used.
  • the sample was manufactured in the same manner as the sample 101 except that the four evaporation source crucibles arranged on the circumference having a distance of 150 mm were not used.
  • the variation coefficient of the filling rate is an index value indicating the degree of variation in the filling rate of the phosphor in the scintillator layer.
  • the coefficient of variation of the filling rate is determined by measuring the filling rate in 100 sections generated by dividing the vertical and horizontal directions into 10 on the radiation scintillator, and calculating the average filling rate Dav obtained from the filling rate in each measurement section and the standard deviation Ddev of the filling rate. It calculated
  • Example 2 A plurality of photodiodes and a plurality of TFT elements were formed on a glass substrate, and the whole was covered with a protective layer made of an epoxy resin. A scintillator layer was formed on the protective layer in the same manner as the sample 101 of Example 1. Thereafter, a moisture-resistant protective layer (20 ⁇ m) made of polyparaxylylene, a reflective layer (20 nm) made of aluminum, and a protective layer (100 ⁇ m) made of an epoxy resin were laminated on the scintillator layer to obtain a radiation image detector 201.
  • Radiation image detectors 202 to 206 were obtained by changing the scintillator layer of the radiation image detector 201 to the scintillator layers used in the samples 102 to 106.
  • Example 2 Evaluation similar to Example 1 was performed about the obtained radiographic image detector. However, the evaluation of adhesiveness was performed on the surface on the X-ray incident side of the radiation image detector.
  • the radiographic image detector of the present invention is less deteriorated in brightness and sharpness and excellent in impact resistance and adhesiveness.

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Abstract

L'invention porte sur un scintillateur de rayonnement dont la netteté et la luminance sont élevées, tout en présentant d’excellentes caractéristiques de résistance aux impacts et d’adhérence. L'invention porte également sur un capteur d'image de rayonnement. Le scintillateur de rayonnement, qui comporte une couche de scintillateur contenant un phosphore sur un substrat, est caractérisé par le fait qu'il y a au moins deux valeurs maximales dans la courbe de profil d'épaisseur de film de la couche de scintillateur obtenues en prenant une coupe transversale perpendiculaire à la surface de couche de scintillateur et en passant par le centre de la surface de couche de scintillateur.
PCT/JP2009/053936 2008-09-08 2009-03-03 Scintillateur de rayonnement et capteur d'image de rayonnement WO2010026789A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011224337A (ja) * 2010-03-29 2011-11-10 Fujifilm Corp 放射線画像撮影装置及び放射線画像撮影システム
WO2013189673A1 (fr) * 2012-06-21 2013-12-27 Siemens Aktiengesellschaft Plaque de scintillateur

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09206296A (ja) * 1996-02-02 1997-08-12 Matsushita Electric Ind Co Ltd Ｘ線撮像装置
JP2000131444A (ja) * 1998-10-28 2000-05-12 Canon Inc 放射線検出装置、放射線検出システム、及び放射線検出装置の製造方法
WO2008090796A1 (fr) * 2007-01-23 2008-07-31 Konica Minolta Medical & Graphic, Inc. Panneau de scintillateur et détecteur de rayonnement d'écran plat

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09206296A (ja) * 1996-02-02 1997-08-12 Matsushita Electric Ind Co Ltd Ｘ線撮像装置
JP2000131444A (ja) * 1998-10-28 2000-05-12 Canon Inc 放射線検出装置、放射線検出システム、及び放射線検出装置の製造方法
WO2008090796A1 (fr) * 2007-01-23 2008-07-31 Konica Minolta Medical & Graphic, Inc. Panneau de scintillateur et détecteur de rayonnement d'écran plat

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011224337A (ja) * 2010-03-29 2011-11-10 Fujifilm Corp 放射線画像撮影装置及び放射線画像撮影システム
WO2013189673A1 (fr) * 2012-06-21 2013-12-27 Siemens Aktiengesellschaft Plaque de scintillateur
US9291722B2 (en) 2012-06-21 2016-03-22 Siemens Aktiengesellschaft Scintillator plate

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