WO2010024131A1 - 成膜装置及び酸化物薄膜成膜用基板の製造方法 - Google Patents

成膜装置及び酸化物薄膜成膜用基板の製造方法 Download PDF

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Publication number
WO2010024131A1
WO2010024131A1 PCT/JP2009/064303 JP2009064303W WO2010024131A1 WO 2010024131 A1 WO2010024131 A1 WO 2010024131A1 JP 2009064303 W JP2009064303 W JP 2009064303W WO 2010024131 A1 WO2010024131 A1 WO 2010024131A1
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WO
WIPO (PCT)
Prior art keywords
substrate
film
metal film
forming
process chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2009/064303
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English (en)
French (fr)
Japanese (ja)
Inventor
祐二 本多
光博 鈴木
正史 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Youtec Co Ltd
Original Assignee
Youtec Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Youtec Co Ltd filed Critical Youtec Co Ltd
Publication of WO2010024131A1 publication Critical patent/WO2010024131A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target

Definitions

  • the present invention has been made in consideration of the above-described circumstances, and an object of the present invention is to form a film forming apparatus and an oxide thin film film forming substrate capable of forming a metal film having excellent crystallinity and flatness on the substrate. It is in providing the manufacturing method of.
  • the method for manufacturing a substrate for forming an oxide thin film according to the present invention includes a step of forming a first metal film on a substrate by a sputtering method at a temperature of 300 ° C. or lower, Forming a second metal film on the first metal film by a sputtering method at a temperature of 500 ° C. to 1000 ° C .; Forming a third metal film on the second metal film by vapor deposition at a temperature of 300 ° C. or lower; It is characterized by comprising.
  • the counter sputter cathode 8 includes a counter target, and the counter target is a pair of targets 11 and 12 that face each other in parallel across a predetermined space.
  • the targets 11 and 12 are targets made of any one of Pt, Ir, and Ru.
  • Permanent magnets (not shown) as magnetic field generating means are arranged on the back side of each of the targets 11 and 12.
  • the magnetic field generating means generates a magnetic field in a direction substantially perpendicular to the back surfaces of the targets 11 and 12, and is configured to generate a magnetic field between the target 11 and the target 12. Further, the substrate holding mechanism 2 can position the substrate on the side surface side of the counter target.
  • the output supply to the opposing target is stopped, and the sputtering is finished.
  • the supply of inert gas is also stopped.
  • the substrate heating heater 4 is also turned off.
  • the substrate holding unit 3 shown in FIG. 1 is moved by a pendulum as indicated by an arrow 6 a by the moving mechanism 6, and the substrate holding unit 3 is opposed to the vapor deposition source 10.
  • the substrate 13 is cooled by the substrate cooling mechanism to lower the substrate temperature to 300 ° C. or lower.
  • the first metal film 14 is formed on the substrate 13 by sputtering at a temperature of 300 ° C. or lower (preferably about 200 ° C.), damage to the substrate 13 is reduced. Flatness can be improved by reducing the unevenness of the surface of the first metal film 14. Since the second and third metal films 15 and 16 formed on the first metal film 14 inherit the crystallinity and morphology of the first metal film 14 as they are, the second and third metal films The flatness of the surfaces 15 and 16 can also be improved.
  • the parallel plate type sputtering having a high ion density.
  • plasma damage to the substrate 13 can be reduced. Therefore, it is effective when a semiconductor element or the like is formed on the substrate 13.
  • the counter sputter cathode 8 it is easy to control the film thickness when forming the first and second metal films 14 and 15 having a small film thickness.
  • an electron beam evaporation (EB evaporation) method using an electron beam is used.
  • EB evaporation electron beam evaporation
  • other evaporation methods can be used, for example, a resistance heating method can be used. .
  • 3 and 4 are diagrams showing the results of X-ray diffraction (Pt-XRD evaluation results) of the oxide thin film deposition substrates according to the examples and comparative examples, respectively.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
PCT/JP2009/064303 2008-08-28 2009-08-13 成膜装置及び酸化物薄膜成膜用基板の製造方法 Ceased WO2010024131A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008-219784 2008-08-28
JP2008219784A JP5256466B2 (ja) 2008-08-28 2008-08-28 成膜装置及び酸化物薄膜成膜用基板の製造方法

Publications (1)

Publication Number Publication Date
WO2010024131A1 true WO2010024131A1 (ja) 2010-03-04

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PCT/JP2009/064303 Ceased WO2010024131A1 (ja) 2008-08-28 2009-08-13 成膜装置及び酸化物薄膜成膜用基板の製造方法

Country Status (2)

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JP (1) JP5256466B2 (enExample)
WO (1) WO2010024131A1 (enExample)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58177463A (ja) * 1982-04-12 1983-10-18 Hitachi Ltd 積層薄膜成膜装置
JPH04221061A (ja) * 1990-12-21 1992-08-11 Ricoh Co Ltd 薄膜形成装置
JP2003213402A (ja) * 2002-01-24 2003-07-30 Utec:Kk 成膜装置、酸化物薄膜成膜用基板及びその製造方法
JP2004311922A (ja) * 2002-12-24 2004-11-04 Seiko Epson Corp 電極膜およびその製造方法、ならびに強誘電体メモリおよび半導体装置
JP2006108291A (ja) * 2004-10-04 2006-04-20 Seiko Epson Corp 強誘電体キャパシタ及びその製造方法、並びに強誘電体メモリ装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58177463A (ja) * 1982-04-12 1983-10-18 Hitachi Ltd 積層薄膜成膜装置
JPH04221061A (ja) * 1990-12-21 1992-08-11 Ricoh Co Ltd 薄膜形成装置
JP2003213402A (ja) * 2002-01-24 2003-07-30 Utec:Kk 成膜装置、酸化物薄膜成膜用基板及びその製造方法
JP2004311922A (ja) * 2002-12-24 2004-11-04 Seiko Epson Corp 電極膜およびその製造方法、ならびに強誘電体メモリおよび半導体装置
JP2006108291A (ja) * 2004-10-04 2006-04-20 Seiko Epson Corp 強誘電体キャパシタ及びその製造方法、並びに強誘電体メモリ装置

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Publication number Publication date
JP5256466B2 (ja) 2013-08-07
JP2010053402A (ja) 2010-03-11

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