WO2010004850A1 - Structure d'interconnexion otique - Google Patents

Structure d'interconnexion otique Download PDF

Info

Publication number
WO2010004850A1
WO2010004850A1 PCT/JP2009/061172 JP2009061172W WO2010004850A1 WO 2010004850 A1 WO2010004850 A1 WO 2010004850A1 JP 2009061172 W JP2009061172 W JP 2009061172W WO 2010004850 A1 WO2010004850 A1 WO 2010004850A1
Authority
WO
WIPO (PCT)
Prior art keywords
optical
layer
wiring
optical wiring
wiring structure
Prior art date
Application number
PCT/JP2009/061172
Other languages
English (en)
Japanese (ja)
Inventor
隆徳 清水
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Priority to JP2010519711A priority Critical patent/JP5370365B2/ja
Publication of WO2010004850A1 publication Critical patent/WO2010004850A1/fr

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12002—Three-dimensional structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches

Definitions

  • the present invention relates to an optical wiring structure of an LSI having optical wiring on a chip or between chips, and more particularly to an optical wiring structure having a light-electric conversion element.
  • optical wiring structure a technique for replacing a part of the electrical wiring of the semiconductor integrated circuit with a light wiring structure (optical wiring structure) has been developed.
  • an optical wiring structure a structure in which an optical wiring layer formed on a substrate different from a semiconductor integrated circuit is bonded onto an electric wiring layer has been proposed (for example, Reference 1: Kenichi Nishi, Hiroyuki Ohashi, “[Invited Talk] LSI on-chip optical wiring technology”, Shingaku Techniques, Vol. 107, No. 372, LQE 2007-118, pp. 27-32, 2007, FIG. 3).
  • an optical waveguide that guides an optical signal, an optical modulation element that converts an electrical signal from a semiconductor integrated circuit into an optical signal, and an optical signal that has propagated are converted into an electrical signal.
  • a light receiving element or the like is used.
  • a signal to the light modulation element is electrically propagated from the semiconductor layer including the semiconductor integrated circuit, and an electric signal from the light receiving element is propagated to the semiconductor layer through an electrical connection.
  • the LSI optical wiring structure as described above is affected by the light receiver side, such as stray light generated by optical coupling with the outside, electromagnetic noise generated by the driver of the optical modulator, and external electromagnetic noise. There was a problem.
  • As a countermeasure against stray light and electromagnetic noise in the optical wiring structure there is a technique of accommodating individual elements in a package such as Kovar, but it is not easy to apply the same configuration to an integrated chip.
  • the present invention has been made to solve the above problems, and an object thereof is to suppress stray light and electromagnetic noise in an optical wiring structure.
  • An optical wiring structure includes an optical wiring layer including an optical element and an optical circuit connected to the optical element, an electric circuit layer having an input / output electric circuit of the optical element, and a wiring connected to the input / output electric circuit.
  • a semiconductor integrated circuit layer including an electric wiring layer; an electric wiring connecting the optical element and the input / output electric circuit; and a conductive material that surrounds the optical element in a plane direction of the optical wiring layer and is disposed around the optical element.
  • An optical element in a range that extends in the normal direction of the plane of the optical wiring layer, is insulated from the electrical wiring, and does not absorb or scatter light propagating through the optical circuit. It is intended to be located nearby.
  • the optical wiring structure is provided with the shielding structure made of the conductive material that is disposed around the optical element in the planar direction of the optical wiring layer.
  • FIG. 1 is a cross-sectional view schematically showing a configuration example of the optical wiring structure according to Embodiment 1 of the present invention.
  • FIG. 2 is a cross-sectional view schematically showing a cross section of the A-A ′ plane of FIG.
  • FIG. 3 is an explanatory diagram for explaining the dimensions and arrangement of the conductive vias 81.
  • FIG. 4 is an explanatory diagram showing the operation of the optical wiring structure according to the first embodiment of the present invention.
  • FIG. 5 is a cross-sectional view schematically showing the configuration of the optical wiring structure in the second embodiment.
  • FIG. 6 is a cross-sectional view schematically showing a schematic configuration of the optical wiring structure in the third embodiment.
  • FIG. 1 is a cross-sectional view schematically showing a configuration example of the optical wiring structure in the first embodiment of the present invention.
  • FIG. 2 is a cross-sectional view schematically showing a cross section of the AA ′ plane of FIG.
  • the optical wiring layer 2 includes an optical wiring layer substrate 21, a plurality of light receivers (optical elements) 51, and an optical waveguide core 22 disposed close to the light receiver 51.
  • the optical waveguide core 22 constitutes an optical circuit. These are arranged in the insulating layer 23.
  • the insulating layer 23 functions as a clad with respect to the optical waveguide core 22, and an optical waveguide is constituted by these.
  • a wiring via 53 for taking out an electric signal from the light receiver 51 is formed.
  • the wiring via 53 extends in the insulating layer 23 from the light receiver 51 toward the surface layer (the LSI layer 4 side).
  • a plurality of conductive vias 81 are arranged around the light receiver 51.
  • the optical waveguide core 22 is appropriately branched from the portion where the optical input 24 from the outside is connected, and is connected to each light receiver 51.
  • An inner layer ground electrode 71 is formed on the optical wiring layer substrate 21, and a surface layer ground electrode 72 is formed on the surface of the insulating layer 23 (on the LSI layer 4 side).
  • the inner layer ground electrode 71 and the surface layer ground electrode 72 are formed in a plate shape, and the inner layer ground electrode 71 and the surface layer ground electrode 72 sandwich a layer including an optical circuit such as the light receiver 51 and the optical waveguide core 22.
  • the LSI layer 4 includes an electric circuit layer 42 and an electric wiring layer 43 stacked on an LSI substrate 41.
  • an electric amplifier 52 for amplifying the electric signal of the light receiver 51 is disposed in the electric circuit layer 42.
  • the electrical wiring layer 43 is provided with a wiring via 55 for sending an electrical signal to the electrical amplifier 52.
  • the wiring via 55 extends from the electric amplifier 52 toward the surface layer (the optical wiring layer 2 side).
  • the bonding layer 3 is mainly composed of wiring bumps 54 and conductive bumps 82 formed on the surface layers of the optical wiring layer 2 and the LSI layer 4.
  • the wiring bump 54 connects the wiring via 53 of the optical wiring layer 2 and the wiring via 55 of the LSI layer 4, and the conductive bump 82 is connected to the conductive via 81.
  • a portion where the optical input 24 is input and a portion where the wiring via 53 is formed region of the light receiver 51.
  • a feature is that a plurality of conductive vias (shielding structures) 81 are arranged.
  • the plurality of conductive vias 81 are provided close to the light receiver 51 within a range in which the signal light propagating through the optical waveguide core 22 is not absorbed or scattered.
  • the interval between the conductive vias 81 sandwiching the waveguide core 22 needs to be equal to or greater than the width of the signal light field distribution (full width 1 / e 2 of the peak intensity), and may be about twice as long.
  • the field distribution of light propagating through the optical waveguide core 22 can be obtained by BPM (Beam Propagation Method) or the like.
  • the conductive vias 81 are arranged in a zigzag state in plan view, and the light receiver 51 is surrounded by the plurality of conductive vias 81.
  • the size and arrangement of the conductive via 81 are such that when the light receiving device 51 is viewed from the normal line L of the surface surrounding the light receiving device 51 where the arrival of stray light 91 is desired to be suppressed, The effect can be enhanced by being buried without a gap.
  • the radius of the conductive via 81 is r
  • the distance between the centers of the conductive vias 81 is a
  • the angle between the normal L and the line connecting the centers of the conductive vias 81 is ⁇ .
  • a ⁇ sin ⁇ 2r ⁇ 0 may be satisfied. It is obvious that the conductive vias 81 may be arranged not only in the above two stages but also in three or more stages.
  • the conductive via 81 is electrically connected to the inner layer ground electrode 71 and the surface layer ground electrode 72. Therefore, the light receiver 51 surrounded by the plurality of conductive vias 81 is in a state in which an equipotential surface or a ground surface is formed around it.
  • the wiring via 53 is insulated and separated from the conductive via 81 and the like.
  • an inner layer ground electrode and a surface layer ground electrode may be formed so as to surround the electric amplifier 52, or a conductive via or the like may be formed.
  • the conductive bump 82 is connected to an electrode pad or the like on the LSI layer 4 side, but may be connected to the LSI layer 4 when an inner layer ground electrode, a surface layer ground electrode, a conductive via, or the like is formed. .
  • the wiring via 53, the wiring via 55, the wiring bump 54, the conductive via 81, and the conductive bump 82 can be made of a metal material such as Cu, Ni, or Au, for example. These can be formed by a plating method or the like. Moreover, the inner layer ground electrode 71 and the surface layer ground electrode 72 can be made of a material containing Cu, Au, or the like. These can be formed by, for example, a film formation method such as sputtering film formation or plating. In forming the wiring via and the conductive via, for example, an opening is formed in the insulating layer 23. This can be formed by etching using a mask pattern formed by a known lithography technique. Moreover, this etching is reactive ion etching, wet etching, or the like. The opening may be formed by laser processing.
  • the LSI layer 4 and the optical wiring layer 2 are melt-bonded by installing a solder material such as AuSn on one side of the wiring bump 54 and the conductive bump 82 on the optical wiring layer 2 or the LSI layer 4. Can be connected and pasted. Further, the surface of each bump may be activated and joined directly by plasma treatment or the like.
  • the method for forming the solder material is the same as the above-described method for forming the metal material for vias and bumps.
  • An optical input 24 input from an external light source or the like is coupled to the optical waveguide core 22 to propagate light.
  • the component that is not coupled to the optical waveguide core 22 becomes the stray light 91.
  • the stray light 912 in the optical wiring layer that propagates in the optical wiring layer 2 is scattered by the conductive via 81 together with the electromagnetic wave noise 922 in the optical wiring layer. Therefore, for example, the coupling of stray light to the light receiver 51 is suppressed.
  • the stray light 913 in the bonding layer that propagates in the bonding layer 3 is reflected by the surface layer ground electrode 72 or the conductive bump 82 together with the electromagnetic wave noise 923 in the bonding layer.
  • the substrate propagation electromagnetic wave noise 921 propagating through the optical wiring layer substrate 21 is reflected by the inner layer ground electrode 71.
  • the substrate propagation stray light 911 is mainly used for the optical wiring. It is absorbed by the layer substrate 21 and the remaining part is reflected by the inner layer ground electrode 71. For this reason, stray light is not coupled to the light receiver 51, and only the received signal light is coupled to the light receiver 51.
  • conductive vias for light shielding and electromagnetic shielding are arranged in the optical wiring layer 2.
  • stray light generated when optical input from an external light source or the like is coupled to the optical wiring layer, electromagnetic wave noise entering from the periphery of the optical wiring layer or the bonding layer, and the like are blocked.
  • stray light and electromagnetic noise in the optical wiring structure can be suppressed.
  • the effect mentioned above can be improved more by providing the ground electrode electrically connected to the conductive via.
  • the ground electrode should just be formed over the area
  • FIG. 5 is a cross-sectional view schematically showing the configuration of the optical wiring structure in the second embodiment.
  • FIG. 5 shows a cross section of the optical wiring layer 2 in a plane parallel to the substrate plane, which is the same as FIG. 2 in the description of the first embodiment.
  • a conductive structure which is a wall-like structure integrally formed in a portion where the optical input 24 is input and a portion where the wiring via 53 is formed (region of the light receiver 51).
  • a property wall (shielding structure) 811 is arranged.
  • the conductive wall 811 is formed so as to surround the wiring via 53 so as not to be hooked on the optical waveguide core 22.
  • the conductive wall 811 corresponds to the structure in which the conductive vias 81 in the first embodiment described above are arranged without gaps, and has a configuration in which a higher light shielding effect and electromagnetic wave shielding effect can be obtained.
  • Other configurations are the same as those in the first embodiment, and a description thereof will be omitted.
  • the conductive wall 811 can be formed in the same manner as the conductive via 81 in the first embodiment. Therefore, the width of the gap between the conductive walls 811 sandwiching the waveguide core 22 may be equal to the interval between the conductive vias 81 sandwiching the waveguide core 22 in the first embodiment. Further, the conductive wall 811 may be formed in a bowl shape covering the entire periphery of the optical wiring layer 2, for example.
  • FIG. 6 is a cross-sectional view schematically showing a schematic configuration of the optical wiring structure in the third embodiment.
  • FIG. 7 is a cross-sectional view schematically showing a cross section of the BB ′ plane of FIG.
  • the optical wiring structure in the third embodiment includes an optical modulator (optical element) 61 in the optical wiring layer 2.
  • the optical modulator core 611 is optically connected to the optical waveguide core 22.
  • a wiring via 63 is connected to the optical modulator 61 so that an electric signal can be sent to the optical modulator 61.
  • the wiring via 63 extends from the optical modulator 61 toward the surface layer (the LSI layer 4 side) inside the insulating layer 23.
  • the optical waveguide core 22 is appropriately branched from the portion where the optical input 24 from the outside is connected, one connected to the light receiver 51 and the other connected to the light.
  • the modulator core 611 is connected.
  • the optical modulator 61 is a linear Fabry-Perot resonator type, but is not limited to this, and is a Mach-Zehnder type optical modulator or a ring resonator type optical modulator. Also good.
  • the LSI layer 4 includes a modulator driver 62 that sends an electric signal to the optical modulator 61 at a portion corresponding to the optical modulator 61 of the electric circuit layer 42, and the electric wiring layer 43 optically modulates the electric signal.
  • a wiring via 65 for sending to the container 61 is formed.
  • the wiring via 65 extends from the modulator driver 62 toward the optical wiring layer 2 side.
  • the wiring bump 64 connects the wiring via 63 of the optical wiring layer 2 and the wiring via 65 of the LSI layer 4.
  • Other configurations are the same as those of the first embodiment described above, and a description thereof will be omitted.
  • the electromagnetic wave noise 92 (FIG. 7) is generated by the modulator driver 62 in the operation of the optical modulator 61, the surface ground electrode 72, the conductive via 81, and the conductive Since it is blocked by the bumps 82, electromagnetic wave noise is prevented from propagating in the insulating layer 23.
  • electromagnetic wave noise generated by the modulator driver 62 propagates toward the light receiver 51, it can be regarded as electromagnetic wave noise in the bonding layer and blocked.
  • FIG. 8 is a cross-sectional view schematically showing a schematic configuration of the optical wiring structure in the fourth embodiment.
  • FIG. 9 is a cross-sectional view schematically showing a cross section taken along the line CC ′ of FIG.
  • the optical wiring layer 2 is provided with the heat dissipation via 83
  • the bonding layer 3 is provided with the heat dissipation bump 84 connected to the heat dissipation via 83
  • the strength holding bump 85 is provided.
  • the heat radiating via 83 and the heat radiating bump 84 are for releasing heat generated in the LSI.
  • the parallelism and the strength of the optical wiring layer 2 and the LSI layer 4 may not be sufficiently maintained only with the bumps near the light receiver 51, but the strength in such a case is reduced.
  • strength holding bumps 85 are provided.
  • a filler such as a so-called underfill may be disposed and fixed in the bonding layer 3 in order to maintain the strength.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

Selon l'invention, une pluralité de trous d'interconnexion conducteurs (81) est ménagée sur une partie (une région d'un récepteur de lumière (51)) où des trous d'interconnexion interconnectant (53) sont formés. Les trous d'interconnexion conducteurs (81) sont ménagés à proximité du récepteur de lumière (51) dans une plage où une lumière de signal qui s'est propagée à travers une âme de guide d'ondes optiques (22) n'est pas absorbée ou diffusée. A la périphérie du récepteur de lumière (51), les trous d'interconnexion sont disposés en zigzag dans une vue en plan, entourant le récepteur de lumière (51).
PCT/JP2009/061172 2008-07-07 2009-06-19 Structure d'interconnexion otique WO2010004850A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010519711A JP5370365B2 (ja) 2008-07-07 2009-06-19 光配線構造

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008176641 2008-07-07
JP2008-176641 2008-07-07

Publications (1)

Publication Number Publication Date
WO2010004850A1 true WO2010004850A1 (fr) 2010-01-14

Family

ID=41506970

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2009/061172 WO2010004850A1 (fr) 2008-07-07 2009-06-19 Structure d'interconnexion otique

Country Status (2)

Country Link
JP (1) JP5370365B2 (fr)
WO (1) WO2010004850A1 (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012145743A (ja) * 2011-01-12 2012-08-02 Nippon Telegr & Teleph Corp <Ntt> 光モジュール
JP2015094783A (ja) * 2013-11-08 2015-05-18 日本電信電話株式会社 配線基板
JP2015184588A (ja) * 2014-03-25 2015-10-22 日本電気株式会社 光電気集積回路及び光インタポーザ
JP2015535389A (ja) * 2012-08-31 2015-12-10 マイクロン テクノロジー， インク． フォトニクス構造の形成方法
JP2016540242A (ja) * 2013-10-23 2016-12-22 アルカテル−ルーセント 検知器デバイス
JPWO2017077638A1 (ja) * 2015-11-06 2018-08-16 オリンパス株式会社 内視鏡、および光伝送モジュール
WO2018180785A1 (fr) * 2017-03-30 2018-10-04 京セラ株式会社 Substrat de câblage photoélectrique
JP2020079850A (ja) * 2018-11-13 2020-05-28 富士通株式会社 光送受信器
WO2020255936A1 (fr) * 2019-06-18 2020-12-24 Ｎｔｔエレクトロニクス株式会社 Élément de réception de lumière et structure de protection contre la lumière pour circuit optique
US11114818B2 (en) * 2018-06-08 2021-09-07 Commissariat A L'energie Atomique Et Aux Energies Alternatives Photonic chip passed through by a via
WO2022030001A1 (fr) * 2020-08-07 2022-02-10 日本電信電話株式会社 Module à semi-conducteur optique et son procédé de fabrication

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001242332A (ja) * 2000-03-01 2001-09-07 Nippon Telegr & Teleph Corp <Ntt> 光導波路及びこれを用いた光導波路モジュール
JP2002131593A (ja) * 2000-08-17 2002-05-09 Matsushita Electric Ind Co Ltd 光実装基板、光モジュ−ル、光送受信装置、光送受信システムおよび光実装基板の製造方法
JP2003232947A (ja) * 2002-02-08 2003-08-22 Matsushita Electric Ind Co Ltd 光実装基板、光デバイス、および光実装基板の製造方法
JP2004053659A (ja) * 2002-07-16 2004-02-19 Ricoh Co Ltd 光電気集積装置の製造方法及び光電気集積装置
WO2006025523A1 (fr) * 2004-09-02 2006-03-09 Nec Corporation Module composite photoélectrique
WO2008023508A1 (fr) * 2006-08-22 2008-02-28 Nec Corporation Connecteur optique et structure de couplage optique

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001242332A (ja) * 2000-03-01 2001-09-07 Nippon Telegr & Teleph Corp <Ntt> 光導波路及びこれを用いた光導波路モジュール
JP2002131593A (ja) * 2000-08-17 2002-05-09 Matsushita Electric Ind Co Ltd 光実装基板、光モジュ−ル、光送受信装置、光送受信システムおよび光実装基板の製造方法
JP2003232947A (ja) * 2002-02-08 2003-08-22 Matsushita Electric Ind Co Ltd 光実装基板、光デバイス、および光実装基板の製造方法
JP2004053659A (ja) * 2002-07-16 2004-02-19 Ricoh Co Ltd 光電気集積装置の製造方法及び光電気集積装置
WO2006025523A1 (fr) * 2004-09-02 2006-03-09 Nec Corporation Module composite photoélectrique
WO2008023508A1 (fr) * 2006-08-22 2008-02-28 Nec Corporation Connecteur optique et structure de couplage optique

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012145743A (ja) * 2011-01-12 2012-08-02 Nippon Telegr & Teleph Corp <Ntt> 光モジュール
US10094988B2 (en) 2012-08-31 2018-10-09 Micron Technology, Inc. Method of forming photonics structures
US11886019B2 (en) 2012-08-31 2024-01-30 Micron Technology, Inc. Method of forming photonics structures
JP2015535389A (ja) * 2012-08-31 2015-12-10 マイクロン テクノロジー， インク． フォトニクス構造の形成方法
US11402590B2 (en) 2012-08-31 2022-08-02 Micron Technology, Inc. Method of forming photonics structures
US10761275B2 (en) 2012-08-31 2020-09-01 Micron Technology, Inc. Method of forming photonics structures
JP2016540242A (ja) * 2013-10-23 2016-12-22 アルカテル−ルーセント 検知器デバイス
JP2015094783A (ja) * 2013-11-08 2015-05-18 日本電信電話株式会社 配線基板
US9500823B2 (en) 2014-03-25 2016-11-22 Nec Corporation Opto-electric integrated circuit and optical interposer
JP2015184588A (ja) * 2014-03-25 2015-10-22 日本電気株式会社 光電気集積回路及び光インタポーザ
JPWO2017077638A1 (ja) * 2015-11-06 2018-08-16 オリンパス株式会社 内視鏡、および光伝送モジュール
WO2018180785A1 (fr) * 2017-03-30 2018-10-04 京セラ株式会社 Substrat de câblage photoélectrique
US11114818B2 (en) * 2018-06-08 2021-09-07 Commissariat A L'energie Atomique Et Aux Energies Alternatives Photonic chip passed through by a via
JP2020079850A (ja) * 2018-11-13 2020-05-28 富士通株式会社 光送受信器
US10830950B2 (en) 2018-11-13 2020-11-10 Fujitsu Limited Optical transmitter-receiver
JP7096758B2 (ja) 2018-11-13 2022-07-06 富士通株式会社 光送受信器
WO2020255936A1 (fr) * 2019-06-18 2020-12-24 Ｎｔｔエレクトロニクス株式会社 Élément de réception de lumière et structure de protection contre la lumière pour circuit optique
WO2022030001A1 (fr) * 2020-08-07 2022-02-10 日本電信電話株式会社 Module à semi-conducteur optique et son procédé de fabrication

Also Published As

Publication number Publication date
JP5370365B2 (ja) 2013-12-18
JPWO2010004850A1 (ja) 2011-12-22

Similar Documents

Publication Publication Date Title
JP5370365B2 (ja) 光配線構造
US10444451B2 (en) Shielded photonic integrated circuit
US8659138B2 (en) Semiconductor package having electrode on side surface, and semiconductor device
US11425847B2 (en) Electro-optic modulator
US10739664B2 (en) Optical modulator
JP6988322B2 (ja) 光受信モジュール用パッケージ
US20050135727A1 (en) EMI-EMC shield for silicon-based optical transceiver
US11137560B2 (en) Semiconductor module, manufacturing method thereof, and communication method using the same
JP3818864B2 (ja) 高周波半導体装置
CN101128761A (zh) 包含基于soi的光学部件的多个集成电路的垂直堆叠
US20110002582A1 (en) Semiconductor optical interconnection device and semiconductor optical interconnection method
JP2020166159A (ja) 光導波路素子、及び光導波路デバイス
TWI223458B (en) Light coupled device
JP7156549B2 (ja) 光通信部品
US10403569B2 (en) Semiconductor device
US11929590B2 (en) Method for producing optical semiconductor device
WO2022071355A1 (fr) Modulateur optique et dispositif de transmission optique l&#39;utilisant
US20200249540A1 (en) Ground cage for an integrated optical device
TWI813229B (zh) 封裝及其製造方法
JP7278516B2 (ja) 半導体モジュール
JP6006124B2 (ja) 光モジュール用基板および光モジュール
JP5760724B2 (ja) 信号変換器および回路モジュール
JP2009252912A (ja) 高周波用半導体装置
JPH11251622A (ja) 光結合半導体装置
JPWO2015050167A1 (ja) 半導体集積回路及びその製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09794297

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2010519711

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09794297

Country of ref document: EP

Kind code of ref document: A1