WO2010004609A1 - 電力用半導体装置 - Google Patents
電力用半導体装置 Download PDFInfo
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- WO2010004609A1 WO2010004609A1 PCT/JP2008/062281 JP2008062281W WO2010004609A1 WO 2010004609 A1 WO2010004609 A1 WO 2010004609A1 JP 2008062281 W JP2008062281 W JP 2008062281W WO 2010004609 A1 WO2010004609 A1 WO 2010004609A1
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Definitions
- the present invention relates to a power semiconductor device equipped with a power chip such as an IGBT (Insulated Gate Bipolar Transistor) chip, and more particularly to a power semiconductor device capable of reducing the mounting area.
- a power chip such as an IGBT (Insulated Gate Bipolar Transistor) chip
- a power system is configured by connecting a plurality of power semiconductor devices. At this time, it is required to configure a small power system by reducing the mounting area of the power semiconductor device.
- the present invention has been made to solve the above-described problems, and an object thereof is to obtain a power semiconductor device capable of reducing the mounting area.
- the present invention provides a power chip in which a first power terminal and a signal terminal are formed on a first main surface, and a second power terminal is formed on a second main surface opposite to the first main surface; A first metal plate connected to the first power terminal of the power chip; and a first metal plate disposed to face the first metal plate and connected to the second power terminal of the power chip.
- An external signal terminal wherein the first metal plate has a first power external terminal derived from the lower surface of the insulating cover, and the second metal plate is derived from the lower surface of the insulating cover.
- the second power external terminal and the first power are bent in opposite directions, and the insulating cover is sandwiched in the bent direction of the first power external terminal or the second power external terminal.
- the second power external terminal does not exist on the side opposite to the first power external terminal, and the first power on the side opposite to the second power external terminal across the insulating cover.
- the power semiconductor device is characterized in that no external terminal is present.
- the mounting area can be reduced by the present invention. Thereby, a small-sized electric power system can be constituted.
- FIG. 1 is a perspective view showing a power semiconductor device according to a first embodiment of the present invention.
- 1 is a top view showing a power semiconductor device according to a first embodiment of the present invention. It is a perspective view which shows the inside of the power semiconductor device of FIG.
- FIG. 4 is a cross-sectional view taken along the line AA ′ of FIG. It is sectional drawing to which the principal part of FIG. 4 was expanded.
- FIG. 2 is a circuit diagram of the power semiconductor device of FIG. 1. It is a perspective view which shows an example in the state which mounted the power semiconductor device of FIG. 1 on the heat sink. It is a perspective view which shows the other example of the state which mounted the power semiconductor device of FIG. 1 on the heat sink.
- FIG. 1 is a perspective view showing a power semiconductor device according to a first embodiment of the present invention.
- 1 is a top view showing a power semiconductor device according to a first embodiment of the present invention.
- FIG. 4 is a cross-sectional view taken along the line
- FIG. 2 is a top view illustrating an example of a layout of the power semiconductor device in FIG. 1.
- FIG. 6 is a top view illustrating another example of the layout of the power semiconductor device in FIG. 1.
- FIG. 1 is a perspective view showing a power semiconductor device according to Embodiment 1 of the present invention
- FIG. 2 is a top view.
- the signal external terminals 14 and 16 are led out from the upper surface of the insulating cover 12 of the power semiconductor device 10, and the first and second power external terminals 18 and 20 are led out from the lower surface of the insulating cover 12.
- the first and second power external terminals 18 and 20 are bent in opposite directions. Further, in the direction in which the first power external terminal 18 or the second power external terminal 20 is bent, the second power power terminal is disposed on the opposite side of the first power external terminal 18 with the insulating cover 12 interposed therebetween.
- the external terminal 20 does not exist, and the first power external terminal 18 does not exist on the opposite side of the second power external terminal 20 across the insulating cover 12.
- Mounting holes 22 and 24 are formed in the first and second power external terminals 18 and 20, respectively.
- FIG. 3 is a perspective view showing the inside of the power semiconductor device of FIG. 4 is a cross-sectional view taken along the line AA ′ of FIG.
- FIG. 5 is an enlarged cross-sectional view of a main part of FIG.
- FIG. 6 is a circuit diagram of the power semiconductor device of FIG.
- IGBT chips 26 and 4 freewheel diode chips 28 are connected in parallel.
- An emitter 26a (first power terminal) and a gate 26b (signal terminal) are formed on the first main surface of the IGBT chip 26 (power chip), and a collector 26c is formed on the second main surface opposite to the first main surface. (Second power terminal) is formed.
- An anode 28a is formed on the first main surface of the freewheel diode chip 28, and a cathode 28b is formed on the second main surface.
- the first metal plate 30 and the second metal plate 32 are disposed so as to face each other.
- the convex portion 30a of the first metal plate 30 is connected to the emitter 26a of the IGBT chip 26 by solder 34, and the convex portion 30b of the first metal plate 30 is connected to the anode 28a of the freewheel diode chip 28 by solder 36. Yes.
- the second metal plate 32 is connected to the collector 26c of the IGBT chip 26 and the cathode 28b of the freewheel diode chip 28 by solders 38 and 40, respectively.
- the signal external terminal 16 is separated from the first metal plate 30 by the insulating plate 42, and the convex portion 16 a of the signal external terminal 16 is connected to the gate 26 b of the IGBT chip 26 by the solder 44.
- the power semiconductor device 10 of FIG. 1 is formed by covering the IGBT chip 26 with the resin insulating cover 12 from the outside of the first and second metal plates 30 and 32.
- the first and second metal plates 30, 32 have first and second power external terminals 18, 20 derived from the lower surface of the insulating cover 12, respectively.
- the provision of the convex portions 30 a and 30 b facilitates the connection between the IGBT chip 26 and the free wheel diode chip 28 and the first metal plate 30.
- the resistance to mechanical stress and thermal stress can be improved.
- FIG. 7 is a perspective view showing an example of a state in which the power semiconductor device of FIG. 1 is mounted on a heat sink.
- External wirings 50 and 52 such as pass bars are mounted on the heat sink 46 as a cooling member via insulating sheets 48a and 48b, respectively.
- the first and second power external terminals 18 and 20 are electrically connected to the external wirings 50 and 52, respectively, by insulating screws 54a and 54b inserted into the mounting holes 22 and 24, respectively, and a heat sink. 46 is fixed.
- an insulating sheet 48 may be disposed on the entire surface of the heat sink 46 as shown in FIG.
- the power semiconductor device 10 is mounted vertically with respect to the upper surface of the heat sink 46, the mounting area is small. Further, since the signal external terminals 14 and 16 are led out from the opposite sides of the insulating cover 12 from the first and second power external terminals 18 and 20, the connection to the signal external terminals 14 and 16 is not possible. Easy.
- FIG. 9 is a top view showing an example of the layout of the power semiconductor device of FIG. Four power semiconductor devices 10 are connected in series via an external wiring 56.
- FIG. 10 is a top view showing another example of the layout of the power semiconductor device of FIG. Two power semiconductor devices 10 connected in parallel via an external wiring 56 are connected in series. In this way, the two power semiconductors are provided so that the first power external terminal 18 of one power semiconductor device 10 and the second power external terminal 20 of the other power semiconductor device 10 do not overlap.
- the device 10 can be placed in close proximity. Therefore, the mounting area can be reduced particularly in series connection. Thereby, a small-sized electric power system can be constituted.
- FIG. FIG. 11 is a cross-sectional view showing the inside of the power semiconductor device according to the second embodiment of the present invention.
- the elastic part 30c of the first metal plate 30 is connected to the emitter 26a of the IGBT chip 26 by the solder 34, and the elastic part 30d of the first metal plate 30 is connected to the anode 28a of the freewheel diode chip 28 by the solder 36. Yes.
- the elastic portion 16 b of the signal external terminal 16 is connected to the gate 26 b of the IGBT chip 26 by solder 44.
- Other configurations are the same as those in the first embodiment.
- the IGBT chip 26 and the free wheel diode chip 28 can be easily connected to the first metal plate 30.
- the resistance to mechanical stress and thermal stress can be improved.
- FIG. 12 is a cross-sectional view showing the inside of the power semiconductor device according to the third embodiment of the present invention.
- Stress relaxation metal plates 58 and 60 are connected to the first metal plate 30 by solders 62 and 64, respectively.
- the first metal plate 30 is connected to the emitter 26a of the IGBT chip 26 via the stress relaxation metal plate 58 by the solder 34, and the solder 36 to the anode 28a of the freewheel diode chip 28 via the stress relaxation metal plate 60.
- the stress relaxation metal plates 58 and 60 are formed of a substance such as Mo having a thermal expansion coefficient intermediate between the IGBT chip 26 and the free wheel diode chip 28 and the first metal plate 30. Other configurations are the same as those of the second embodiment.
- FIG. 13 is a sectional view showing the inside of the power semiconductor device according to the fourth embodiment of the present invention.
- Stress relaxation metal plates 66 and 68 are connected to the second metal plate 32 by solders 70 and 72.
- the second metal plate 32 is connected to the collector 26c of the IGBT chip 26 via the stress relaxation metal plate 66 by the solder 38, and the solder 40 is connected to the cathode 28b of the freewheel diode chip 28 via the stress relaxation metal plate 68.
- the stress relaxation metal plates 66 and 68 are made of a material such as Mo having a thermal expansion coefficient intermediate between the IGBT chip 26 and the free wheel diode chip 28 and the second metal plate 32. Other configurations are the same as those of the third embodiment.
- FIG. 14 is a cross-sectional view showing the inside of the power semiconductor device according to the fifth embodiment of the present invention
- FIG. 15 is a cross-sectional view taken along the line BB ′ of FIG.
- An insulating guide 74 surrounding the IGBT chip 26 and the freewheel diode chip 28 is disposed between the first metal plate 30 and the second metal plate 32.
- the first metal plate 30 and the second metal plate 32 are screwed with screws 80 via an insulating bush 76 and a spring material 78.
- the convex portion 30 a of the first metal plate 30 is pressed against the emitter 26 a of the IGBT chip 26, and the convex portion 30 b of the first metal plate 30 is pressed against the anode 28 a of the free wheel diode chip 28.
- the second metal plate 32 is in pressure contact with the collector 26 c of the IGBT chip 26 and the cathode 28 b of the free wheel diode chip 28.
- the elastic portion 16 b of the signal external terminal 16 is in pressure contact with the gate 26 b of the IGBT chip 26.
- Other configurations are the same as those of the first embodiment.
- the IGBT chip 26 and the free wheel diode chip 28 and the first and second metal plates 30 and 32 are press-contacted without using solder or the like, so that assembly is easy. Further, since the insulation guide 74 can prevent the positional displacement of the IGBT chip 26 and the free wheel diode chip 28 during the pressure contact, a highly reliable power semiconductor device can be realized.
- the pressure contact structure by screwing has been described.
- the present invention is not limited to this, and other structures that can press-contact the IGBT chip 26 and the free wheel diode chip 28 with the first and second metal plates 30 and 32 are also possible. Good.
- FIG. FIG. 16 is a cross-sectional view showing the inside of the power semiconductor device according to the sixth embodiment of the present invention.
- the elastic part 30 c of the first metal plate 30 is pressed against the emitter 26 a of the IGBT chip 26, and the elastic part 30 d of the first metal plate 30 is pressed against the anode 28 a of the free wheel diode chip 28.
- Other configurations are the same as those of the fifth embodiment.
- the IGBT chip 26 and the free wheel diode chip 28 can be easily connected to the first metal plate 30.
- the resistance to mechanical stress and thermal stress can be improved.
- FIG. 17 is a sectional view showing the inside of the power semiconductor device according to the seventh embodiment of the present invention.
- the second metal plate 32 is in pressure contact with the collector 26 c of the IGBT chip 26 via the stress relaxation metal plate 66, and is in pressure contact with the cathode 28 b of the freewheel diode chip 28 via the stress relaxation metal plate 68.
- the stress relaxation metal plates 66 and 68 are made of a material such as Mo having a thermal expansion coefficient intermediate between the IGBT chip 26 and the free wheel diode chip 28 and the second metal plate 32.
- the insulating guide 74 surrounds the stress relief metal plates 66 and 68.
- Other configurations are the same as those of the fifth embodiment.
- FIG. 18 is a cross-sectional view showing the inside of the power semiconductor device according to the eighth embodiment of the present invention.
- the first metal plate 30 is in pressure contact with the emitter 26 a of the IGBT chip 26 via the stress relaxation metal plate 58, and is in pressure contact with the anode 28 a of the freewheel diode chip 28 via the stress relaxation metal plate 60.
- the stress relaxation metal plates 58 and 60 are formed of a substance such as Mo having a thermal expansion coefficient intermediate between the IGBT chip 26 and the free wheel diode chip 28 and the first metal plate 30.
- the insulating guide 84 surrounds the stress relief metal plates 58 and 60. Other configurations are the same as those in the seventh embodiment.
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Abstract
Description
12 絶縁カバー
16 信号用外部端子
18 第1の電力用外部端子
20 第2の電力用外部端子
26 IGBTチップ(パワーチップ)
26a エミッタ(第1の電力端子)
26b ゲート(信号端子)
26c コレクタ(第2の電力端子)
30 第1の金属板
30a,30b 凸部
30c,30d 弾性部
32 第2の金属板
58,60,66,68 応力緩和用金属板
74,84 絶縁ガイド
図1は、本発明の実施の形態1に係る電力用半導体装置を示す斜視図であり、図2は上面図である。電力用半導体装置10の絶縁カバー12の上面から信号用外部端子14,16が導出し、絶縁カバー12の下面から第1,第2の電力用外部端子18,20が導出している。第1,第2の電力用外部端子18,20は、それぞれ反対方向に折り曲げられている。また、第1の電力用外部端子18又は第2の電力用外部端子20の折り曲げられた方向において、絶縁カバー12を挟んで第1の電力用外部端子18の反対側には第2の電力用外部端子20は存在せず、絶縁カバー12を挟んで第2の電力用外部端子20の反対側には第1の電力用外部端子18は存在しない。第1,第2の電力用外部端子18,20には、それぞれ取り付け穴22,24が形成されている。
図11は、本発明の実施の形態2に係る電力用半導体装置の内部を示す断面図である。第1の金属板30の弾性部30cはIGBTチップ26のエミッタ26aにはんだ34により接続され、第1の金属板30の弾性部30dはフリーホイールダイオードチップ28のアノード28aにはんだ36により接続されている。信号用外部端子16の弾性部16bはIGBTチップ26のゲート26bにはんだ44により接続されている。その他の構成は実施の形態1と同様である。
図12は、本発明の実施の形態3に係る電力用半導体装置の内部を示す断面図である。第1の金属板30に応力緩和用金属板58,60がはんだ62,64によりそれぞれ接続されている。第1の金属板30は、応力緩和用金属板58を介してIGBTチップ26のエミッタ26aにはんだ34により接続され、応力緩和用金属板60を介してフリーホイールダイオードチップ28のアノード28aにはんだ36により接続されている。応力緩和用金属板58,60は、IGBTチップ26やフリーホイールダイオードチップ28と第1の金属板30の中間の熱膨張係数を持つMoなどの物質により形成されている。その他の構成は実施の形態2と同様である。
図13は、本発明の実施の形態4に係る電力用半導体装置の内部を示す断面図である。第2の金属板32に応力緩和用金属板66,68がはんだ70,72により接続されている。第2の金属板32は、応力緩和用金属板66を介してIGBTチップ26のコレクタ26cにはんだ38により接続され、応力緩和用金属板68を介してフリーホイールダイオードチップ28のカソード28bにはんだ40により接続されている。応力緩和用金属板66,68は、IGBTチップ26やフリーホイールダイオードチップ28と第2の金属板32の中間の熱膨張係数を持つMoなどの物質により形成されている。その他の構成は実施の形態3と同様である。
図14は、本発明の実施の形態5に係る電力用半導体装置の内部を示す断面図であり、図15は図14のB-B´における断面図である。
図16は、本発明の実施の形態6に係る電力用半導体装置の内部を示す断面図である。第1の金属板30の弾性部30cはIGBTチップ26のエミッタ26aに圧接され、第1の金属板30の弾性部30dはフリーホイールダイオードチップ28のアノード28aに圧接されている。その他の構成は実施の形態5と同様である。
図17は、本発明の実施の形態7に係る電力用半導体装置の内部を示す断面図である。第2の金属板32は、応力緩和用金属板66を介してIGBTチップ26のコレクタ26cに圧接され、応力緩和用金属板68を介してフリーホイールダイオードチップ28のカソード28bに圧接されている。応力緩和用金属板66,68は、IGBTチップ26やフリーホイールダイオードチップ28と第2の金属板32の中間の熱膨張係数を持つMoなどの物質により形成されている。圧接時における位置ずれを防ぐために、絶縁ガイド74が応力緩和用金属板66,68を取り囲んでいる。その他の構成は実施の形態5と同様である。
図18は、本発明の実施の形態8に係る電力用半導体装置の内部を示す断面図である。第1の金属板30は、応力緩和用金属板58を介してIGBTチップ26のエミッタ26aに圧接され、応力緩和用金属板60を介してフリーホイールダイオードチップ28のアノード28aに圧接されている。応力緩和用金属板58,60は、IGBTチップ26やフリーホイールダイオードチップ28と第1の金属板30の中間の熱膨張係数を持つMoなどの物質により形成されている。圧接時における位置ずれを防ぐために、絶縁ガイド84が応力緩和用金属板58,60を取り囲んでいる。その他の構成は実施の形態7と同様である。
Claims (6)
- 第1の主面に第1の電力端子及び信号端子が形成され、前記第1の主面に対向する第2の主面に第2の電力端子が形成されたパワーチップと、
前記パワーチップの前記第1の電力端子に接続された第1の金属板と、
前記第1の金属板に対向するように配置され、前記パワーチップの前記第2の電力端子に接続された第2の金属板と、
前記第1の金属板及び前記第2の金属板の外側から前記パワーチップを覆う絶縁カバーと、
前記パワーチップの前記信号端子に接続され、前記絶縁カバーの上面から突出した信号用外部端子とを備え、
前記第1の金属板は、前記絶縁カバーの下面から突出した第1の電力用外部端子を有し、
前記第2の金属板は、前記絶縁カバーの下面から突出した第2の電力用外部端子を有し、
前記第1の電力用外部端子と前記第2の電力用外部端子は、それぞれ反対方向に折り曲げられ、
前記第1の電力用外部端子又は前記第2の電力用外部端子の折り曲げられた方向において、前記絶縁カバーを挟んで前記第1の電力用外部端子の反対側には前記第2の電力用外部端子は存在せず、前記絶縁カバーを挟んで前記第2の電力用外部端子の反対側には前記第1の電力用外部端子は存在しないことを特徴とする電力用半導体装置。 - 前記第1の金属板は、前記パワーチップの前記第1の電力端子に接続される凸部を有することを特徴とする請求項1記載の電力用半導体装置。
- 前記第1の金属板は、前記パワーチップの前記第1の電力端子に接続される弾性部を有することを特徴とする請求項1記載の電力用半導体装置。
- 前記パワーチップと前記第1の金属板との間及び前記パワーチップと前記第2の金属板との間の何れか一方又は両方に挿入された応力緩和用金属板を更に備え、
前記応力緩和用金属板は、前記パワーチップと前記第1,第2の金属板の中間の熱膨張係数を持つ物質により形成されていることを特徴とする請求項1に記載の電力用半導体装置。 - 前記第1の金属板と前記第2の金属板の間に配置され、前記パワーチップを取り囲む絶縁ガイドを更に備え、
前記パワーチップの前記第1の電力端子と前記第1の金属板は圧接され、
前記パワーチップの前記第2の電力端子と前記第2の金属板は圧接されていることを特徴とする請求項1~4の何れか1項に記載の電力用半導体装置。 - 前記パワーチップを挟んで前記第1の金属板と前記第2の金属板がネジ止めされていることを特徴とする請求項5に記載の電力用半導体装置。
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PCT/JP2008/062281 WO2010004609A1 (ja) | 2008-07-07 | 2008-07-07 | 電力用半導体装置 |
JP2010519575A JPWO2010004609A1 (ja) | 2008-07-07 | 2008-07-07 | 電力用半導体装置 |
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