JP2015154077A - 電力ダイパッケージ及び三相電力変換装置 - Google Patents
電力ダイパッケージ及び三相電力変換装置 Download PDFInfo
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- JP2015154077A JP2015154077A JP2015009476A JP2015009476A JP2015154077A JP 2015154077 A JP2015154077 A JP 2015154077A JP 2015009476 A JP2015009476 A JP 2015009476A JP 2015009476 A JP2015009476 A JP 2015009476A JP 2015154077 A JP2015154077 A JP 2015154077A
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/345—Arrangements for heating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5385—Assembly of a plurality of insulating substrates
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/06181—On opposite sides of the body
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Inverter Devices (AREA)
Abstract
Description
Claims (6)
- 第1の部分及び第2の部分を備えた電力ダイパッケージであって、
前記第1の部分はダイが配置されるキャビティで構成される額部で構成され、前記額部は電気絶縁基板上に配置された第1、第2及び第3の金属板上に配置され、前記電気絶縁層は第4の金属板上に配置され、
前記第2の部分は別の電気絶縁基板上に配置された第5及び第6の金属板で構成され、前記別の電気絶縁層は第7の金属板上に配置され、前記第4及び第7の金属板は機械的に接合され、
前記ダイは、前記第1、第5及び第6の金属板との電気接触を有する第1のダイグループと、前記第2、第3及び第6の金属板と接触する第2のダイグループとの2つのダイグループに分割され、
前記第1の板は正のDC電圧接続部であり、前記第2の板は負のDC電圧接続部であり、前記第3の板は前記第2のダイグループにおける前記ダイのゲート接続部であり、前記第4の板はAC電圧接続部であり、前記第5の板は前記第1のダイグループにおける前記ゲートのゲート接続部である
ことを特徴とする電力ダイパッケージ。 - 前記第1、第2及び第5の金属板は、機械的に接合された前記第4及び第7の金属板の外部に延び、且つ機械的に接合された前記第4及び第7の金属板の外部で折り曲げられる
ことを特徴とする、請求項1に記載の電力ダイパッケージ。 - 前記折り曲げられた部分は、機械的支持体上に配置された相互接続コンポーネント上にある
ことを特徴とする、請求項2に記載の電力ダイパッケージ。 - 前記機械的支持体は、伝熱媒体を含む貯蔵槽のカバーであり、
機械的に接合された前記第4及び第7の金属板は、前記伝熱媒体に浸漬される
ことを特徴とする、請求項3に記載の電力ダイパッケージ。 - 前記第1、第2、第3、第5及び第6の金属板は、機械的に接合された前記第4及び第7の金属板の外部に延び、且つ前記ダイのゲートドライバに接続される
ことを特徴とする、請求項4に記載の電力ダイパッケージ。 - 請求項1から請求項3までのいずれか一項に記載の3つの電力ダイパッケージを含む三相電力変換装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14155455.0A EP2908336A1 (en) | 2014-02-17 | 2014-02-17 | A package of power dies |
EP14155455.0 | 2014-02-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2015154077A true JP2015154077A (ja) | 2015-08-24 |
Family
ID=50101824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015009476A Pending JP2015154077A (ja) | 2014-02-17 | 2015-01-21 | 電力ダイパッケージ及び三相電力変換装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9515012B2 (ja) |
EP (1) | EP2908336A1 (ja) |
JP (1) | JP2015154077A (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102625685B1 (ko) * | 2018-11-14 | 2024-01-17 | 엘지전자 주식회사 | 전력모듈 및 그의 제조방법, 전력모듈을 구비한 인버터 장치 |
JP2021064674A (ja) * | 2019-10-11 | 2021-04-22 | 富士電機株式会社 | 半導体装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007005233A1 (de) * | 2007-01-30 | 2008-08-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Leistungsmodul |
WO2010004609A1 (ja) * | 2008-07-07 | 2010-01-14 | 三菱電機株式会社 | 電力用半導体装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5182632A (en) * | 1989-11-22 | 1993-01-26 | Tactical Fabs, Inc. | High density multichip package with interconnect structure and heatsink |
JP4979909B2 (ja) * | 2005-08-19 | 2012-07-18 | 株式会社日立製作所 | 電力変換装置 |
JP2007235004A (ja) * | 2006-03-03 | 2007-09-13 | Mitsubishi Electric Corp | 半導体装置 |
JP4967447B2 (ja) * | 2006-05-17 | 2012-07-04 | 株式会社日立製作所 | パワー半導体モジュール |
JP5557441B2 (ja) * | 2008-10-31 | 2014-07-23 | 日立オートモティブシステムズ株式会社 | 電力変換装置および電動車両 |
US8269244B2 (en) * | 2010-06-28 | 2012-09-18 | Cree, Inc. | LED package with efficient, isolated thermal path |
JP5581131B2 (ja) * | 2010-06-30 | 2014-08-27 | 日立オートモティブシステムズ株式会社 | パワーモジュール及びそれを用いた電力変換装置 |
-
2014
- 2014-02-17 EP EP14155455.0A patent/EP2908336A1/en not_active Withdrawn
-
2015
- 2015-01-21 JP JP2015009476A patent/JP2015154077A/ja active Pending
- 2015-02-12 US US14/620,762 patent/US9515012B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007005233A1 (de) * | 2007-01-30 | 2008-08-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Leistungsmodul |
WO2010004609A1 (ja) * | 2008-07-07 | 2010-01-14 | 三菱電機株式会社 | 電力用半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
EP2908336A1 (en) | 2015-08-19 |
US9515012B2 (en) | 2016-12-06 |
US20150235930A1 (en) | 2015-08-20 |
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