WO2009145091A1 - バイポーラパルス電源及び複数のバイポーラパルス電源からなる電源装置 - Google Patents

バイポーラパルス電源及び複数のバイポーラパルス電源からなる電源装置 Download PDF

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Publication number
WO2009145091A1
WO2009145091A1 PCT/JP2009/059271 JP2009059271W WO2009145091A1 WO 2009145091 A1 WO2009145091 A1 WO 2009145091A1 JP 2009059271 W JP2009059271 W JP 2009059271W WO 2009145091 A1 WO2009145091 A1 WO 2009145091A1
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Prior art keywords
output
bipolar pulse
power supply
switching
pulse power
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PCT/JP2009/059271
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English (en)
French (fr)
Japanese (ja)
Inventor
芳邦 堀下
忍 松原
敦 小野
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Ulvac Inc
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Ulvac Inc
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Priority to CN200980116930.0A priority Critical patent/CN102027667B/zh
Priority to KR1020107029230A priority patent/KR101190138B1/ko
Priority to US12/989,444 priority patent/US8467211B2/en
Publication of WO2009145091A1 publication Critical patent/WO2009145091A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/493—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode the static converters being arranged for operation in parallel

Definitions

  • the present invention relates to a bipolar pulse power supply for supplying power to plasma and a surface treatment apparatus in the form of a bipolar pulse, and a power supply apparatus including a plurality of bipolar pulse power supplies.
  • This type of bipolar pulse power source is used in, for example, a sputtering apparatus for forming a predetermined thin film on the surface of a processing substrate, and is connected between a rectifier circuit for supplying DC power and a positive / negative output of the rectifier circuit, and four switching elements.
  • a device having a MOSFET bridge circuit composed of elements is known. Then, each switching element is appropriately operated by the control means, and an arbitrary pulse voltage is applied to a pair of targets that are output terminals (electrodes) by alternately switching the polarity at a predetermined frequency, and the target is an anode electrode, a cathode electrode.
  • the bipolar pulse power supply described in Patent Document 1 is provided with a detection circuit that detects an output current from the bridge circuit and an inductor that suppresses an increase in current when arc discharge occurs, and the output detected by the detection circuit.
  • the switching element in operation is switched, and the output to the electrode is temporarily interrupted.
  • the overcurrent is calmed down and the value becomes close to the steady output current value, the output to the electrode is resumed.
  • the output current changes beyond a certain range, it can be regarded as a pre-stage phenomenon (micro arc) of abnormal discharge, and by performing the arc extinguishing process, the occurrence of arc discharge with a large amount of current change can be suppressed. .
  • the capacitance component (capacitance) component becomes dominant over the inductance component. For this reason, when the arc discharge occurs, the impedance on the plasma load side becomes small (in some cases, it becomes small to several ohms or less), so that the output and the plasma (load) are combined to suddenly move from the capacitive component to the output side. Released. As a result, even if an inductor with a small inductance value is provided, the current rise cannot be suppressed efficiently, and overcurrent flows in a short time (between several ⁇ S) (that is, the current rise rate per unit time when arc discharge occurs). High).
  • a bipolar pulse power supply capable of preventing the occurrence of overvoltage at the time of polarity reversal while effectively limiting the current rise at the time of arc discharge occurrence directly connected to the occurrence of splash and particles
  • Another object of the present invention is to provide a power supply device including a plurality of bipolar pulse power supplies.
  • a bipolar pulse power supply includes a bridge circuit composed of switching elements connected between positive and negative DC outputs from a DC power supply source, and controls the operation of the switching elements.
  • a bipolar pulse power source that outputs a bipolar pulse at a predetermined frequency to a pair of electrodes in contact with the plasma, when outputting to the electrodes, initially the output to the electrodes has a constant voltage characteristic, and then An output characteristic switching circuit is provided for switching the output so that the output to the electrode has a constant current characteristic.
  • the output characteristic switching circuit when the output characteristic switching circuit is provided, when an arc discharge occurs for some reason, a sudden voltage drop occurs due to a rapid decrease in the impedance of the plasma. Will increase. At this time, since the output from the DC power supply source to the electrode has a constant current characteristic, the rate of current increase per unit time when arc discharge occurs is limited. On the other hand, since the constant voltage characteristic is obtained only at the time of polarity reversal at each electrode, it is possible to prevent overvoltage from occurring at the time of polarity reversal and to suppress the occurrence of arc discharge due to overcurrent.
  • the output characteristic switching circuit includes an inductor arranged in at least one of positive and negative DC outputs from the DC power supply source to the bridge circuit, and another switching element connected in parallel to the inductor. If the configuration in which the other switching elements are operated for a predetermined time and the inductor is short-circuited at the beginning of switching of the switching elements is adopted, a configuration for switching from constant voltage characteristics to constant current characteristics can be easily realized.
  • the switching timing of the switching element can be appropriately set according to the volume of the plasma generation space (that is, the plasma impedance), and the current rise at the time of arc discharge is generated during the micro arc process. The switching element is controlled to be off so that the rate is limited.
  • the output characteristic switching circuit is connected in series to at least one of positive and negative DC outputs from the DC power supply source to the bridge circuit, and is connected in series to the inductor, and shorts the inductor when an overvoltage occurs. If a configuration including a diode is employed, the diode is turned on while the inductor is short-circuited while an overvoltage is generated during polarity reversal, and constant voltage characteristics are obtained only during that time. According to this, since the switching element which needs to control switching is not used, the circuit configuration and its control may be simplified.
  • a configuration in which a resistor is connected in series to the other switching element or the diode may be adopted to protect the switching element or the diode from an overvoltage generated at the time of polarity reversal.
  • the electrode is particularly effective when it is a pair of targets arranged in a processing chamber in which a sputtering method is performed.
  • a power supply device is a power supply device in which a plurality of bipolar pulse power supplies according to any one of claims 1 to 5 are connected in parallel, A bipolar pulse power supply is synchronized and output in the form of a bipolar pulse to at least a pair of electrodes arranged in the same processing chamber.
  • a bipolar pulse power source E is disposed, for example, facing a processing substrate in a sputtering apparatus, and a bipolar pulse power source E is applied at a predetermined frequency to a pair of targets T1 and T2 that are electrodes in contact with plasma P. It is used to supply power (output) in a state.
  • the bipolar pulse power source E includes a DC power supply unit 1 that can supply DC power and an oscillation unit 2 that controls output to the targets T1 and T2.
  • the waveform of the output voltage may be a substantially square wave or a substantially sine wave.
  • the DC power supply unit 1 includes a first CPU circuit 11 that controls the operation thereof, an input unit 12 to which commercial AC power (three-phase AC 200 V or 400 V) is input, and rectifies the input AC power to generate a DC.
  • the rectifier circuit 13 includes six diodes 13a that convert power into power, and outputs DC power to the oscillation unit 2 via positive and negative DC power lines 14a and 14b. Further, the DC power supply unit 1 is connected to the switching transistor 15 provided between the DC power lines 14a and 14b and the first CPU circuit 11 so as to be communicable, and the output oscillation for controlling on / off of the switching transistor 15 is provided.
  • Driver circuit 16 is provided.
  • a detection circuit 17a for detecting the current and voltage is connected between the DC power lines 14a and 14b, and the current and voltage detected by the detection circuit 17a are supplied to the first CPU circuit 11 via the AD conversion circuit 17b. It is designed to be entered.
  • the oscillating unit 2 includes four first to fourth switching circuits connected between the second CPU circuit 21 communicatively connected to the first CPU circuit 11 and the positive and negative DC power lines 14a and 14b.
  • a bridge circuit 22 composed of transistors SW1 to SW4 and a driver circuit 23 for output oscillation that is connected to the second CPU circuit 21 and controls on / off switching of the switching transistors SW1 to SW4 are provided. ing.
  • the output oscillation driver circuit 23 switches each switching so that, for example, the ON and OFF timings of the first and fourth switching transistors SW1 and SW4 and the second and third switching transistors SW2 and SW3 are reversed.
  • a bipolar pulse is output to the pair of targets T1 and T2 via the output lines 24a and 24b from the bridge circuit 22.
  • a detection circuit 25 for detecting an output current and an output voltage to the pair of targets T1 and T2 is connected to the output lines 24a and 24b.
  • the output current and the output voltage detected by the detection circuit 25 are converted into an AD conversion circuit 26. Is input to the second CPU circuit 21 via the.
  • the first and fourth switching transistors SW1 and SW4 are turned on when the switching transistor SW5 is short-circuited (ON). Thereafter, the short circuit of the switching transistor SW5 is released (turned off) and output to one target T1 (a negative potential is applied to the target T1). Next, the switching transistor SW5 is short-circuited again, the first and fourth switching transistors SW1 and SW4 are turned off, the second and third switching transistors SW2 and SW3 are turned on, and then the switching transistor SW5 is turned off. Output to the other target T2 (a negative potential is applied to the target T2).
  • a bipolar pulse is output at a predetermined frequency between the pair of targets T1 and T2.
  • a pair of targets T1 and T2 to which power is turned on alternately at a predetermined frequency with a sputtering gas such as Ar introduced into the apparatus maintained at a predetermined pressure are applied to the anode electrode and the cathode electrode.
  • a glow discharge is generated between the anode electrode and the cathode electrode to form a plasma atmosphere, and each target T1, T2 is sputtered.
  • the switching loss that occurs when outputting to the targets T1 and T2 occurs only in the switching transistor SW5, and almost no switching loss occurs in each of the switching transistors SW1 to SW4.
  • high durability can be achieved without using a high-performance switching element, and a sufficient heat dissipation mechanism is not required as in the case where switching loss occurs with four switching elements, resulting in lower costs. I can plan.
  • a capacitance component (capacitance) component is dominant over an inductance component. If the capacitive component is dominant in this way, the impedance on the plasma load side becomes small when arc discharge occurs, and the output and the plasma load are combined and suddenly released from the capacitive component to the output side. The For this reason, a large arc current flows within the time from the detection of the arc discharge by the detection means to the interruption of the output to the electrode. As a result, if the arc discharge cannot be extinguished by a single process, the arc current value increases (the arc energy to be released increases) every time the micro arc process is performed, and splash and particles are easily generated (FIG. 3). reference).
  • an inductor 28 having an inductance value larger than the inductance component of plasma is provided on the negative DC output line 14b (see FIG. 1).
  • the output current increase rate ( ⁇ i) at the time of arc discharge is the inductor 28.
  • the inductance value is L
  • the output voltage to the pair of targets T1 and T2 is 500V
  • the output current is 100A
  • the micro arc processing (output cutoff) time is 200 ⁇ S
  • the current increase rate until the output is shut off after detecting the overcurrent For 150%, ⁇ i is 50A.
  • an inductor 28 having an inductance value of 2 mH may be connected to the negative DC output line 14b.
  • the inductor 28 having a predetermined value is provided in the negative DC output line 14b.
  • the connection position of the inductor 28 is not limited to this, and the positive DC output line 14a or the positive / negative is connected. These DC output lines 14a and 14b may be provided respectively.
  • FIG. 4 shows only changes in output voltage and output current at one target T1.
  • an output characteristic switching circuit including the inductor 28 and another switching element SW6 connected in parallel to the inductor 28 is provided on the positive and negative DC output lines 14a and 14b from the DC power supply unit 1 (see FIG. 1).
  • the switching element SW6 has a known structure such as an FET, and ON / OFF switching is controlled by the driver circuit 23. Further, in order to protect the switching element SW6 when preventing overvoltage, a configuration in which a resistor (not shown) having a resistance value of, for example, several ⁇ to several hundred ⁇ is connected in series to the switching element SW6 may be adopted. Good.
  • the switching transistor SW5 is short-circuited (on), for example, the first and fourth switching transistors SW1 and SW4 are turned on, and then the switching transistor SW5 is released (off) and output to one target T1.
  • the inductor 28 is short-circuited by turning on the switching element SW6 for a certain period.
  • the switching transistor SW5 is short-circuited again, the first and fourth switching transistors SW1 and SW4 are turned off, the second and third switching transistors SW2 and SW3 are turned on, and then the switching transistor SW5 is turned off. Later, the inductor 28 is short-circuited by turning on the switching element SW6 for a certain period (see FIG. 2).
  • the switching timing of the switching element SW6 time for turning on the switching element SW6 and the volume of the plasma generation space (ie, plasma impedance) can be set as appropriate.
  • the switching element SW6 is controlled to be off so that the rate of current increase when arc discharge occurs is limited.
  • the switching element SW6 when the polarity is inverted, the switching element SW6 is operated to short-circuit the inductor 28 for a predetermined time, so that while the inductor 28 is short-circuited, the outputs to the targets T1 and T2 have constant voltage characteristics, and the output current Ic is It gradually increases (that is, the output current becomes a lamp output starting from 0 A).
  • the switching element SW6 is turned off, the constant current characteristic is obtained, and overvoltage is prevented from occurring at the time of polarity reversal at each of the targets T1 and T2, and the occurrence of arc discharge due to the overcurrent is suppressed (see FIG. 4 (b)).
  • an arc detection control circuit 27 to which the output current and output voltage detected by the detection circuit 25 are input is provided in the second CPU circuit 21 so as to be communicable (see FIG. 1).
  • the output current changes beyond a certain range
  • the output voltage when the value changes beyond a certain range from the specified voltage, it is regarded as a pre-stage phenomenon (micro arc) of arc discharge, and the arc extinguishing process is performed to suppress the occurrence of arc discharge with a large arc current.
  • the arc detection control circuit 27 captures the current state before the occurrence of the arc discharge, and the output oscillation short-circuiting switching transistor SW5 is short-circuited by the output oscillation driver circuit 23 via the second CPU circuit 21 and the arc detection control circuit 27. (ON) At this time, by providing the inductor 28 in the DC output line 14b, the output from the DC power supply unit 1 has a constant current characteristic, and the rate of current increase when arc discharge occurs is limited.
  • the short circuit of the output short-circuiting switching transistor SW5 is released (turned off), and one of the targets T1, Resume output to T2.
  • the switching element SW6 is turned on for a certain period, the inductor 28 is short-circuited.
  • the output to the targets T1 and T2 has constant voltage characteristics. An overvoltage is prevented from occurring when the output to T2 is resumed.
  • the arc detection control circuit 27 determines whether the output current Va exceeds the steady output current value Vc, or whether the output voltage is smaller than the specified voltage, and the steady output current value Vc is still exceeded, or When the output voltage is smaller than the specified voltage, the output short circuit switching transistor SW5 is again short-circuited by the output oscillation driver circuit 23.
  • the emitted arc energy can be reduced and the generation of splash and particles can be effectively suppressed.
  • the switching transistors SW1 to SW4 of the bridge circuit 22 generate almost no switching loss, so that the durability can be further improved.
  • the output to each of the electrodes is initially performed.
  • the output characteristic switching circuit that has constant voltage characteristics and then switches the output to each electrode to have constant current characteristics has been described as an example provided with the inductor 28 and the switching element SW6, but is not limited thereto. It is not something.
  • a configuration in which a diode (not shown) that short-circuits the inductor 28 when an overvoltage is generated can be connected in parallel to the inductor 28 to form an output characteristic switching circuit.
  • the output characteristic switching circuit can be realized with a simple configuration, and control as in the case of using a switching element may be unnecessary.
  • a clamp circuit may be used as an output characteristic switching circuit.
  • the cupacita C one having 5 to 20 ⁇ F is used, and as the resistor R, one having a range of several ⁇ to 10 ⁇ may be used.
  • ES is a power supply device of the present invention, and this power supply device ES is used in, for example, a magnetron sputtering apparatus (hereinafter referred to as “sputtering apparatus”) 3 having the following configuration.
  • sputtering apparatus a magnetron sputtering apparatus
  • the sputtering apparatus 3 includes a vacuum chamber 31 that can be maintained at a predetermined vacuum pressure (for example, 10 ⁇ 5 Pa) via vacuum exhausting means (not shown) such as a rotary pump and a turbo molecular pump, Chamber) 32.
  • a substrate holder 33 that holds a large-area processing substrate S used in FPD manufacturing in a floating state in terms of potential is provided.
  • the vacuum chamber 31 is also provided with a gas introduction pipe (not shown) for introducing a process gas into the sputtering chamber 32, and a predetermined thin film is formed by sputtering gas consisting of a rare gas such as Ar or reactive sputtering.
  • reactive gases such as O 2 , N 2, and H 2 O that are appropriately selected according to the composition of the thin film to be formed on the surface of the processing substrate S can be introduced into the processing chamber 32.
  • a plurality of (eight in the present embodiment) targets 41 a to 41 h are arranged in parallel at equal intervals so as to face the processing substrate S.
  • or 41h is produced by a well-known method according to the composition of the thin film to form on the processing board
  • substrate S surface such as Al, Ti, Mo, an indium and tin oxide (ITO), and an indium and tin alloy.
  • ITO indium and tin oxide
  • it is formed in the same shape such as a substantially rectangular parallelepiped (rectangular when viewed from above).
  • Each of the targets 41a to 41h is joined to a backing plate for cooling the targets 41a to 41h through a bonding material such as indium or tin during sputtering.
  • Each of the targets 41a to 41h is provided in the vacuum chamber 31 via an insulating member so that the sputtering surface when not in use is located on the same plane parallel to the processing substrate S.
  • a magnet assembly (not shown) having a known structure is disposed behind the targets 41a to 41h (the side facing away from the sputtering surface), and on the front (sputtering surface) side of each of the targets 41a to 41h.
  • Each of the targets 41a to 41h constitutes a pair of adjacent targets (41a and 41b, 41c and 41d, 41e and 41f, 41g and 41h), and is assigned to each pair of targets 41a to 41h.
  • the bipolar pulse power supplies E1 to E4 are provided, and the output lines 24a and 24b from the bipolar pulse power supplies E1 to E4 are connected to each pair of targets 41a and 41b (41c and 41d, 41e and 41f, 41g and 41h). ing.
  • bipolar pulsed power can be supplied to the pair of targets 41a to 41h alternately by the bipolar pulse power sources E1 to E4.
  • each of the polar pulse power sources E1 to E4 is set so that the polarities of the targets 41a to 41h adjacent to each other are reversed. Power is supplied in synchronization (see FIG. 5).
  • an overall control means 5 comprising a CPU communicatively connected to the second CPU circuit 21 of each of the bipolar pulse power supplies E1 to E4 is provided.
  • the switching transistors SW1 to SW4 are operated so that the on / off timings of the switching transistors SW2 and SW3 are inverted and the polarities to the targets 41a to 41h adjacent to each other are inverted, the overall control means 5
  • the short circuit of the switching transistor SW5 is released by the output from, and the signal is output to one of the pair of targets 41a, 41c, 41e, 41g.
  • the output short-circuiting switching transistor SW5 of each bipolar pulse power supply E1 to E4 is short-circuited by the output from the overall control means 5, and after switching each switching transistor SW1 to SW4, the switching transistor SW5 is output from the overall control means.
  • the other targets 41b, 41d, 41f and 41h are released to the other targets 41b, 41d, 41f and 41h.
  • electric power is supplied to each of the targets 41a to 41h in the form of a bipolar pulse at a predetermined frequency and is operated synchronously.
  • the overall control means 5 only needs to synchronize the on / off switching timings of the output short-circuiting switching elements SW5 of the bipolar pulse power supplies E1 to E4.
  • the switching elements SW1 to SW4 can be operated with a sufficient margin, and even if there are individual differences in the switching elements and control circuits of each bipolar pulse power supply, the synchronous operation is easy.
  • Each of the bipolar pulse power supplies E1 to E4 is connected to the bipolar pulse power supply when the output current Ia detected by the detection circuit 25 in any one of the bipolar pulse power supplies exceeds the steady output current value Ic during sputtering.
  • the above-described micro arc process is performed by switching the output short-circuiting switching transistor SW5 by the arc detection control circuit 23.
  • the second of the bipolar pulse power supplies that are output to the adjacent target via the overall control means 5.
  • the output short-circuiting switching transistor SW5 is once short-circuited by the output oscillation driver circuit 23 via the second CPU circuit 21, and the potentials are mutually changed according to the operating states of the switching transistors SW1 to SW4.
  • the operation timing of each of the switching transistors SW1 to SW4 is changed so as to coincide with the output short circuit, the short circuit of the output short circuit switching transistor SW5 is released, and the switching transistor SW5 is output to the target.
  • (A) And (b) is a figure explaining the waveform of the output voltage and output current to a pair of electrodes.
  • BRIEF DESCRIPTION OF THE DRAWINGS The figure which illustrates roughly the sputtering apparatus using the power supply device of this invention.

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  • Chemical Kinetics & Catalysis (AREA)
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PCT/JP2009/059271 2008-05-26 2009-05-20 バイポーラパルス電源及び複数のバイポーラパルス電源からなる電源装置 Ceased WO2009145091A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200980116930.0A CN102027667B (zh) 2008-05-26 2009-05-20 双极脉冲电源以及由多个双极脉冲电源构成的电源装置
KR1020107029230A KR101190138B1 (ko) 2008-05-26 2009-05-20 바이폴라 펄스 전원 및 복수의 바이폴라 펄스 전원으로 구성된 전원 장치
US12/989,444 US8467211B2 (en) 2008-05-26 2009-05-20 Bipolar pulsed power supply and power supply apparatus having plurality of bipolar pulsed power supplies

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JP2008-137077 2008-05-26
JP2008137077A JP5124344B2 (ja) 2008-05-26 2008-05-26 バイポーラパルス電源及び複数のバイポーラパルス電源からなる電源装置並びに出力方法

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US (1) US8467211B2 (enExample)
JP (1) JP5124344B2 (enExample)
KR (1) KR101190138B1 (enExample)
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103069928A (zh) * 2010-08-18 2013-04-24 株式会社爱发科 直流电源装置
EP2405566A4 (en) * 2009-03-02 2014-02-26 Ulvac Inc AC VOLTAGE POWER SUPPLY FOR SPUTTER

Families Citing this family (26)

* Cited by examiner, † Cited by third party
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JP5124345B2 (ja) * 2008-05-26 2013-01-23 株式会社アルバック バイポーラパルス電源及びこのバイポーラパルス電源を複数台並列接続してなる電源装置
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