WO2009139337A1 - Substrat avec couche d'oxyde et son procédé de fabrication - Google Patents

Substrat avec couche d'oxyde et son procédé de fabrication Download PDF

Info

Publication number
WO2009139337A1
WO2009139337A1 PCT/JP2009/058710 JP2009058710W WO2009139337A1 WO 2009139337 A1 WO2009139337 A1 WO 2009139337A1 JP 2009058710 W JP2009058710 W JP 2009058710W WO 2009139337 A1 WO2009139337 A1 WO 2009139337A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
oxide layer
layer
oxide
metal layer
Prior art date
Application number
PCT/JP2009/058710
Other languages
English (en)
Japanese (ja)
Inventor
武彦 蛭間
健 岡東
陽介 秋田
善寛 戸丸
Original Assignee
旭硝子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 旭硝子株式会社 filed Critical 旭硝子株式会社
Priority to KR1020107025406A priority Critical patent/KR101529748B1/ko
Priority to CN2009801172587A priority patent/CN102026770A/zh
Priority to JP2010511962A priority patent/JP5488461B2/ja
Publication of WO2009139337A1 publication Critical patent/WO2009139337A1/fr

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems

Definitions

  • the present invention relates to a substrate with an oxide layer and a method for producing the same.
  • a transparent conductive film typified by tin-doped indium oxide (ITO) is an essential material for electronic devices such as flat panel displays (FPD) such as liquid crystal display elements (LCD) and plasma display panels (PDP), and solar cells. It has become.
  • the general manufacturing method of a transparent conductive film is as follows. First, a transparent conductive film is formed on the substrate using a sputtering method or the like, and then unnecessary portions are removed by patterning. There are various methods for patterning, but photolithography is often used.
  • the photolithography method has a potential problem that the number of steps is large. In particular, with the increase in size of the substrate in the FPD, it has become a major factor that deteriorates productivity. In addition, it is difficult to manufacture a large-sized photomask, and a laser patterning method has been studied as a patterning method for a transparent conductive film instead of a photolithography method (see Patent Documents 1 and 2). This is because the laser patterning method has fewer man-hours and the process stability is higher than that of the photolithography method.
  • ITO which is widely used for FPD and the like due to low resistance characteristics and the like, has a potential concern of depletion of indium metal resources. Therefore, the development of tin oxide or the like has been promoted as a transparent conductive film that can replace ITO (Patent Document 3). However, since tin oxide has high durability against chemical etching, it is practically difficult to apply a photolithographic method using an acid. Therefore, a laser patterning method has been studied for tin oxide.
  • an oxide layer 2 is provided on the glass substrate 1, and laser light is irradiated through the mask to alter the irradiated portion of the object, and then the removal portion 4 is removed by wet etching in the bath,
  • a method for obtaining a desired pattern at a location see FIG. 5.
  • a metal layer is formed on the upper surface in advance when patterning a dielectric mask in which a dielectric multilayer film having a different refractive index is formed on a synthetic quartz substrate.
  • Patent Document 4 A method of simultaneously etching a metal layer and then removing the metal layer is known.
  • Patent Document 5 a method of manufacturing an optoelectronic device by performing patterning by a laser ablation method is known.
  • Japanese Unexamined Patent Publication No. 2001-52602 Japanese Unexamined Patent Publication No. 2005-108668 Japanese Patent No. 4018839 Japanese Patent Laid-Open No. 10-263871 Japanese National Table 2007-533091
  • An object of this invention is to provide the manufacturing method of a base
  • an oxide layer and a metal layer exhibiting transparent conductivity are formed in this order on a substrate, and the energy density is 0.3 to 10 J / cm 2 from the outer surface side of the metal layer.
  • Aspect 2 provides the method for producing a substrate with an oxide layer according to aspect 1, wherein the wavelength of the pulse laser beam is 1047 to 1064 nm.
  • Aspect 3 provides the method for producing a substrate with an oxide layer according to aspect 1 or 2, wherein the area of the irradiated portion irradiated with one pulsed laser beam is 1 mm 2 or more.
  • Aspect 4 provides the method for manufacturing a substrate with an oxide layer according to aspects 1, 2, or 3, wherein the irradiation site is shifted for each shot of pulsed laser light.
  • Aspect 5 provides the method for producing a substrate with an oxide layer according to aspects 1, 2, 3 or 4, wherein the pulsed laser beam is applied at an irradiation rate of 15,000 mm 2 / s or more.
  • Aspect 6 provides the method for producing a substrate with an oxide layer according to aspects 1, 2, 3, 4 or 5, wherein the oxide layer is tin oxide or tin-doped indium oxide.
  • Aspect 7 provides the method for producing a substrate with an oxide layer according to any one of aspects 1 to 6, wherein the oxide layer has a thickness of 10 nm to 1 ⁇ m.
  • Aspect 8 is an aspect in which the metal layer is composed of at least one metal selected from the group consisting of Ag, Al, Co, Cr, Cu, Fe, Mo, Ni, Sn, Zn, and V. The manufacturing method of the base
  • substrate with an oxide layer in any one of the above is provided.
  • Aspect 9 provides the method for producing a substrate with an oxide layer according to any one of aspects 1 to 8, wherein the metal layer is made of a nonmagnetic metal.
  • Aspect 10 provides the method for producing a substrate with an oxide layer according to any one of aspects 1 to 9, wherein the thickness of the metal layer is 3 to 100 nm.
  • Aspect 11 provides a substrate with an oxide layer produced by the method for producing a substrate with an oxide layer according to any one of aspects 1 to 10.
  • Aspect 12 provides an electronic device formed using the oxide layer of the substrate with an oxide layer according to aspect 11 as an electrode.
  • the case where oxygen is contained in the metal layer is included.
  • a pattern of 100 or more oxide layers is formed on the substrate.
  • a pattern of 200 or more oxide layers is formed on the substrate.
  • the oxide layer of the substrate with an oxide layer is used as an electrode of a display panel, the number suitable for the pixels of the display screen, for example, 500 to 2000 is preferable. Further, it is preferable to perform patterning with a short pitch and high definition in accordance with a high-density display panel.
  • the oxide layer is preferably formed of one or more materials selected from the group consisting of indium oxide, tin oxide, tin-doped indium oxide, zinc oxide, titanium oxide, and aluminum oxide.
  • the material of the metal film is preferably not a magnetic material. That is, the metal layer is particularly preferably made of at least one metal selected from the group consisting of Ag, Al, Cr, Cu, Mo, Sn, and V.
  • a metal layer that can be used can be formed by paying attention to the handling of the target.
  • the electronic device is preferably a display panel.
  • the display panel is preferably an LCD or a PDP.
  • said electronic device is a solar cell module.
  • the metal layer can be easily removed by wet etching or dry etching, productivity of the entire process is not deteriorated.
  • the present invention can be applied to various electronic devices, and is particularly suitable for production of a high-definition large-sized display panel having a large number of electrodes. For example, it is suitable for a large panel having a diagonal size of 106 cm or more, or an electrode configuration of the screen having 1024 or more on the column side and 768 or more on the row side. In particular, it is suitable for manufacturing a display panel for high definition images.
  • the productivity and quality of laser patterning of the oxide layer can be dramatically improved. It is effective in a transparent oxide layer made of ITO or tin oxide. In particular, it is suitable for patterning of tin oxide, which has a difficulty in etching rate. Moreover, damage to the oxide layer exhibiting transparent conductivity to be formed can be suppressed. Moreover, this invention can improve the productivity of the board
  • FIG. 1 is a schematic cross-sectional view showing the configuration of the present invention.
  • 2 (A) and 2 (B) are schematic plan views showing the configuration of the present invention, FIG. 2 (A) is a schematic plan view before laser patterning, and FIG. 2 (B) is a laser. It is a schematic plan view after performing patterning.
  • FIG. 3 is a flowchart of the present invention.
  • 4 (A) and 4 (B) are schematic plan views showing another configuration of the present invention, FIG. 4 (A) is a schematic plan view before patterning, and FIG. It is a schematic plan view after performing patterning.
  • 5 (A) to 5 (E) are explanatory diagrams of a conventional example.
  • FIG. 6 is an explanatory diagram of the present invention.
  • a metal layer is formed on the substrate in combination with the oxide layer as the object.
  • the composite laminated structure is irradiated with pulsed laser light, and the oxide layer and the metal layer of the irradiated portion are simultaneously removed without substantially damaging the substrate, and a desired processed object, that is, A patterned oxide layer can be obtained on the substrate.
  • metals have better laser processability than oxides.
  • metal is used as an assist layer during laser patterning.
  • the position of the metal layer is not particularly limited, but it is preferably formed on the surface layer side because of the ease of removing the assist layer after laser irradiation. Further, the metal layer may form a plurality of layers of two or more layers. In that case, a metal layer may be provided between the oxide layer and the substrate.
  • FIG. 1 is a schematic cross-sectional view of the configuration of the present invention, showing a substrate 1, an oxide layer 2, a metal layer 3 functioning as an assist layer, a removal portion 4, a laser light source 50, a laser beam 51, and a mask 7. ing.
  • an oxide layer 2 made of tin oxide having transparent conductivity and a metal layer 3 made of a metal selected from Ag, AlCr, Mo, SnZn alloy or Sn are formed on a substrate (glass substrate) 1.
  • the pulsed laser beam 51 is irradiated from the laser light source 50 through the mask 7 while shifting the irradiation position for each shot from the outer surface side of the metal layer 3, and the metal layer 3 and the oxide layer 2 are removed.
  • the removal portion 4 is formed.
  • FIG. 2 is a schematic plan view of the present invention, which is patterned into a transparent conductive film line.
  • the substrate with an oxide layer thus obtained can be used as a transparent electrode for LCDs and PDPs.
  • the electrodes corresponding to the number of pixels on the display screen are subjected to laser patterning.
  • 2A is a schematic plan view before laser patterning
  • FIG. 2B is a schematic plan view after laser patterning.
  • FIG. 3 is a flowchart relating to the basic steps of the method for producing a substrate with an oxide layer according to the present invention.
  • FIG. 4 is a schematic plan view when different patterning is performed in the present invention. 4A is a schematic plan view before patterning, and FIG. 4B is a schematic plan view after patterning.
  • FIG. 5 is a schematic diagram showing process changes in the prior art.
  • the material of the metal layer is preferably at least one selected from the group consisting of Ag, Al, Co, Cr, Cu, Fe, Mo, Ni, SnZn, Sn and V.
  • An alloy may be used as long as it does not hinder the removal of the film and the removal and etching by the laser irradiation.
  • at least one material selected from the group consisting of Ag, Al, Cr, Cu, Mo, Zn, and Sn is easy to form and when the assist layer is removed after laser irradiation.
  • an etching method capable of removing only the metal layer without damaging the oxide layer is used. Specifically, wet etching or dry etching can be used.
  • the chemical solution used in the wet etching is preferably selected from the viewpoint of the etching rate and the like in consideration of the type of the assist layer and the durability of the oxide layer with respect to the chemical solution.
  • the assist layer is Ag, Al, Cu or Mo
  • a mixture of phosphoric acid, nitric acid, acetic acid and water is suitable.
  • an alkaline solution such as a sodium hydroxide solution can be used in addition.
  • the assist layer is Cr
  • a mixture of cerium ammonium nitrate, perchloric acid and water, or a mixture of cerium ammonium nitrate, nitric acid and water is suitable. It is preferable in terms of productivity and management that the temperature of the chemical solution can be set to room temperature to 50 ° C.
  • the metal layer is on the surface layer, debris deposited on the assist layer can be removed at the same time when the assist layer is removed by etching, which is preferable.
  • the metal layer is removed according to a predetermined area where the oxide layer is to be patterned. Usually, it is preferable from the viewpoint of workability to remove the metal layer in a lump on a predetermined electrode surface using the patterned oxide layer on the substrate as a transparent electrode.
  • the metal layer used as the assist layer is preferably formed by sputtering in terms of film thickness and film quality uniformity.
  • the sputtering pressure is suitably from 0.1 to 2 Pa.
  • the back pressure is preferably 1 ⁇ 10 ⁇ 6 to 1 ⁇ 10 ⁇ 2 Pa.
  • the substrate temperature is preferably room temperature to 300 ° C., particularly 150 to 300 ° C.
  • the metal layer may contain oxygen in addition to the metal component.
  • the atmosphere contains oxygen due to oxygen introduced from the outside or oxygen generated from the oxide target.
  • the metal layer and the oxide layer can be formed by different process methods, but it is preferable to form the metal layer and the oxide layer continuously on-line with the same film forming apparatus. That is, it is particularly preferable to continuously perform the treatment using the same process method and the same film forming apparatus.
  • oxygen may be contained in the metal layer.
  • the oxygen in the metal layer is preferably 0 to 20 atomic% with respect to all components. When the oxygen content exceeds 20 atomic%, the effect of improving the workability of the oxide during laser patterning becomes small.
  • a gas containing oxygen element for example, a mixed gas in which O 2 or CO 2 gas and argon gas are mixed
  • a gas containing oxygen element for example, a mixed gas in which O 2 or CO 2 gas and argon gas are mixed
  • the thickness of the metal layer is preferably 3 to 100 nm. If it is less than 3 nm, the effect of improving the workability of the oxide during laser patterning becomes small. If it exceeds 100 nm, the effect of improving the workability of the oxide is reduced. On the other hand, when the film thickness is too large, a load is applied to assist layer formation and removal of the assist layer after laser patterning.
  • the oxide layer may form two or more layers.
  • the structure may be substrate / oxide layer 1 / oxide layer 2 / metal layer, substrate / oxide layer 1 / metal layer / oxide layer 2 / metal layer, or the like.
  • the oxide layer exhibiting transparent conductivity is preferably at least one selected from the group consisting of indium oxide, tin oxide, zinc oxide, titanium oxide, and aluminum oxide.
  • ITO or tin oxide is preferable in terms of transparency, conductivity, durability when removing the metal layer, and the like.
  • the oxide layer can be formed using an electron beam evaporation method, a sputtering method, an ion plating method, or the like.
  • the sputtering method is preferable in terms of film thickness and film quality uniformity.
  • the sputtering gas is preferably a mixed gas of argon and oxygen, and the oxygen gas concentration is preferably 0.2 to 4% by volume.
  • the sputtering pressure is suitably from 0.1 to 2 Pa.
  • the back pressure is preferably 1 ⁇ 10 ⁇ 6 to 1 ⁇ 10 ⁇ 2 Pa.
  • the substrate temperature is preferably set to room temperature to 300 ° C., particularly 150 to 300 ° C.
  • the film thickness of the oxide layer is preferably 10 nm to 1 ⁇ m. If the thickness is less than 10 nm, the function as an oxide layer is not sufficient, and if it exceeds 1 ⁇ m, transparency is impaired, and removal of the assist layer (metal layer) and the oxide layer at the portion irradiated with the pulsed laser light becomes practically difficult.
  • a base layer for example, resin
  • an underlayer such as a silica film
  • the underlayer may be removed at the same time as the oxide layer and the metal layer during laser processing, or may remain without being removed.
  • the underlayer is preferably formed using a sputtering method.
  • the substrate used in the present invention is not necessarily flat and plate-like, and may be curved or atypical.
  • the substrate include a transparent or opaque glass substrate, a ceramic substrate, and a resin film.
  • the substrate is preferably transparent. From the viewpoint of strength and durability, a glass substrate is particularly preferable.
  • the glass substrate include a colorless and transparent soda lime glass substrate, a quartz glass substrate, a borosilicate glass substrate, and an alkali-free glass substrate.
  • the thickness of the substrate is preferably 0.4 to 3 mm from the viewpoint of strength and transmittance.
  • the wavelength of the pulsed laser beam that can be used in the present invention is 700 to 1500 nm. This wavelength range is preferable because the interaction between the transparent conductive oxide layer and the pulsed laser beam is particularly large compared to the interaction between the substrate and the pulsed laser beam.
  • the wavelength of the pulse laser beam is particularly preferably 1047 to 1064 nm. It is also preferable in that a general-purpose laser processing machine (YAG, YLF, YVO laser, etc.) capable of high output oscillation can be used. In addition, it is preferable to use a type of laser processing machine that can output pulsed light because it is easy to pattern the oxide layer by irradiating the oxide layer with pulsed laser light patterned through a mask. .
  • the pulse width of the pulsed laser light is 1 ns to 1 ⁇ s. If the pulse width of the pulsed laser beam is less than 1 ns, it is difficult to use a high-power laser processing machine, and the thermal effect is reduced, making it impossible to form a uniform pattern. Moreover, since the effect of a metal layer reduces, it is not preferable. On the other hand, if the pulse width exceeds 1 ⁇ s, the thermal influence becomes large, the heat-affected layer around the irradiated part cannot be ignored, and a fine pattern cannot be formed. Further, the pulse width is more preferably 10 ns to 100 ns from the viewpoint of workability.
  • the removal of the oxide layer and the metal layer by pulsed laser light irradiation is preferably performed in one shot.
  • the workability after the second shot is lower than that of the first shot, so that it is not preferable because uniform processing cannot be performed.
  • the energy density of the pulsed laser beam is preferably 0.3 to 10 J / cm 2 . If it is less than 0.3 J / cm 2 , the oxide layer in the irradiated portion is not completely removed and the film remains, which is not preferable. If it exceeds 10 J / cm 2 , damage to the substrate cannot be ignored. Moreover, it is preferable that the area of the irradiation part irradiated with one pulse laser beam is 1 mm ⁇ 2 > or more.
  • the pulse laser beam is irradiated from the outer surface side where the oxide layer and the metal layer are formed. Irradiation from the side where the oxide layer or metal layer is not formed is not preferable because the pulse laser beam propagates through the substrate, energy loss due to absorption of the substrate increases, and the workability of the oxide layer decreases.
  • this invention provides the base
  • an electronic device using the oxide layer of the substrate with the oxide layer as an electrode is provided. Specifically, a display panel or a solar cell module is provided.
  • Examples 1, 3, 14 and 15 are comparative examples
  • Examples 2, 4 to 13 and 16 to 19 are examples of the present invention.
  • Example 1 A high strain point glass for PDP (PD200 manufactured by Asahi Glass Co.) having a thickness of 2.8 mm, a length of 100 mm, and a width of 100 mm was washed and then set as a substrate in a sputtering apparatus.
  • An ITO layer having a thickness of 120 nm is formed on the substrate by a direct current magnetron sputtering method using an ITO target (containing 10 mass% of SnO 2 with respect to the total amount of In 2 O 3 and SnO 2 ).
  • a glass substrate was obtained.
  • As the sputtering gas Ar gas containing 2% by volume of O 2 gas was used.
  • the back pressure was 1 ⁇ 10 ⁇ 3 Pa, the sputtering gas pressure was 0.4 Pa, and the power density was 3.5 W / cm 2 .
  • the substrate temperature was 250 ° C.
  • This glass substrate with an ITO layer was irradiated with pulsed laser light from the ITO layer side.
  • pulse laser beam pulse laser beam (wavelength: 1064 nm) using a pulse type Yb-fiber laser was used.
  • This pulse laser beam had a Gaussian type energy distribution 6 and the power at the irradiated part was 5 W.
  • the pulse width was 100 ns, the irradiation diameter was 100 ⁇ m, the number of shots was once, and the frequency was 20 kHz.
  • the pattern diameter 5 formed by irradiation of the pulse laser beam was measured (refer FIG. 6).
  • the irradiated part irradiated with the laser was observed with an optical microscope, the diameter of the patterned part was measured, and the pattern diameter 5 was evaluated. Since the pulse laser beam has a Gaussian type energy distribution, the pattern diameter 5 becomes larger as the energy of the pulse laser beam is absorbed and removed more easily. Therefore, by evaluating the pattern diameter 5, the laser processing object Workability can be evaluated. In this evaluation, a sample having a pattern diameter 5 of 50 ⁇ m has a minimum energy density of 6.6 J / cm 2 and a pattern diameter 5 of 56 ⁇ m when using a homogenized pulse laser beam. It is known from another evaluation that it is 2.4 J / cm 2 .
  • the pattern diameter 5 is an oxide layer removing portion that can be formed on the substrate for one irradiation. What is necessary is just to irradiate a pulse laser beam according to the gap
  • a predetermined position is sequentially irradiated with pulsed laser light according to the pattern diameter that can be formed by one irradiation. I'll do it.
  • non-linear patterning can be arbitrarily performed in accordance with complicated arrangement of pixel electrodes.
  • FIG. 6 schematically shows a state of continuous and linear patterning formation.
  • a mask is disposed between the laser light source and the workpiece to control and define the gap dimension. That is, laser irradiation is performed so that the laser beam cut by the mask is stamped on the workpiece so as to correspond to a predetermined pattern (see FIG. 1). In this case, since sufficient light source power can be used, the area of the irradiated part irradiated with one pulse laser beam can be set to 1 mm 2 or more.
  • Example 2 After exhausting the residual gas on the ITO layer of the glass substrate with the ITO layer of Example 1, an assist layer having a thickness of 11 nm was formed in a Ar gas atmosphere by a direct current magnetron sputtering method using a Cr metal target.
  • the back pressure was 1 ⁇ 10 ⁇ 3 Pa
  • the sputtering gas pressure was 0.3 Pa
  • the input power density was 1 W / cm 2 .
  • the substrate temperature was 250 ° C.
  • the glass substrate with an assist layer of this example was irradiated with the same pulsed laser light as in Example 1 from the film surface side.
  • the assist layer on the entire surface of the substrate was removed with an etching solution.
  • the etching solution a mixture of ceric ammonium nitrate, perchloric acid and water was used. In the treatment with the etching solution, the ITO layer was not substantially damaged.
  • the pattern diameter of the ITO layer of this example was evaluated with an optical microscope in the same manner as in Example 1, and the results are shown in Table 1.
  • Example 3 On the glass substrate used in Example 1, a SnO 2 target containing Ta 2 O 5 and ZnO (containing 9.6% by mass of Ta 2 O 5 with respect to the total amount, and containing 0.1% of ZnO by direct current magnetron sputtering).
  • the SnO 2 layer having a thickness of 140 nm was formed using a 5 mass% content) to obtain a glass substrate with a SnO 2 layer.
  • As the sputtering gas Ar gas containing 2% by volume of O 2 gas was used.
  • the substrate temperature was 250 ° C.
  • the glass substrate with SnO 2 layer of this example was irradiated with the same pulsed laser light as in Example 1 from the film surface side, the pattern diameter was measured by the same method as in Example 1, and the results are shown in Table 1.
  • Examples 4 to 15 After exhausting the residual gas on the SnO 2 layer of the glass substrate with SnO 2 layer of Example 3, a direct current magnetron sputtering method using an Ag metal target, Al metal target, Cr metal target, Mo metal target or ITO target As a result, an assist layer having the thickness and configuration shown in Table 1 was formed.
  • the sputtering gas using Ar gas atmosphere (Ag, Al, in the formation of Cr and Mo) or O 2 gas (in the case of formation of ITO) Ar gas containing 2 vol%.
  • the back pressure was 1 ⁇ 10 ⁇ 3 Pa, the sputtering gas pressure was 0.3 Pa, and the input power density was 1 W / cm 2 .
  • the substrate temperature was 250 ° C.
  • the glass substrate with an assist layer in Examples 4 to 15 was irradiated with pulsed laser light under the same conditions as in Example 1 from the outer surface side.
  • the assist layer on the entire surface of the substrate was removed with an etching solution.
  • Etching solution is a mixture of phosphoric acid, nitric acid, acetic acid and water (when removing Ag, Al and Mo), a mixture of cerium ammonium nitrate, perchloric acid and water (when removing Cr), or hydrochloric acid, chloride
  • a mixture of iron (III) and water (for removal of ITO) was used.
  • the SnO 2 layer was not substantially damaged.
  • the pattern diameters of the SnO 2 layers of Examples 4 to 15 were evaluated by an optical microscope in the same manner as in Example 1. The results are shown in Table 1.
  • Example 2 and Examples 4 to 15 were observed after the assist layer was removed.
  • Examples 1 and 3 were observed after immersion for 5 minutes at room temperature in a mixture of phosphoric acid, nitric acid, acetic acid and water. Then, it was confirmed that debris was reduced in Example 2 and Examples 4 to 15 as compared with Example 1 and Example 3. It is assumed that debris deposited on the assist layer is removed when the assist layer is removed.
  • Example 16 to 19 As an assist layer, when using Sn and Mo in which the pattern diameter of SnO 2 is improved among the above examples 4 to 15, the homogenized pulse light used when laser patterning is actually performed at the mass production level Evaluation was carried out using. Specifically, a mask is arranged between the laser light source and the workpiece, the gap size is controlled, and laser irradiation is performed so that the laser light cut by the mask is stamped on the workpiece (see FIG. 1). In this case, since sufficient light source power can be used, the area of the irradiated part irradiated with one pulse laser beam can be set to 1 mm 2 or more. Further, the energy density, the number of repetitions, and the pulse width of the pulsed laser beam during processing were set to 3.3 J / cm 2 , 6 KHz, and 50 ns, respectively.
  • the film thickness and the configuration shown in Table 2 are assisted by direct current magnetron sputtering using an Sn metal target on the SnO 2 layer.
  • a layer was formed.
  • Ar gas atmosphere in the case of forming Mo
  • Ar gas containing 2% by volume of O 2 gas in the case of forming Sn
  • the back pressure was 1 ⁇ 10 ⁇ 3 Pa
  • the sputtering gas pressure was 0.3 Pa
  • the input power density was 1 W / cm 2 .
  • the substrate temperature was 250 ° C.
  • the present invention is useful for manufacturing display panels such as large PDPs and LCDs, and for manufacturing solar cell modules.
  • Substrate 2 Oxide layer 3: Metal layer (assist layer) 4: Removal part 5: Pattern diameter 6: Energy distribution 7: Mask 50: Laser light source 51: Laser beam

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Laser Beam Processing (AREA)
  • Physical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Gas-Filled Discharge Tubes (AREA)

Abstract

L'invention porte sur un procédé de fabrication d’un substrat avec une couche d'oxyde à motifs qui comporte la formation sur un substrat d'une couche d'oxyde, qui est transparente et conductrice, et d'une couche métallique, dans cet ordre, l'application d'un faisceau laser pulsé ayant une densité d'énergie allant de 0,3 à 10 J/cm2, une fréquence de répétition de 1 à 100 kHz, et une largeur d'impulsion de 1 ns à 1 µs, à la couche métallique à partir de la surface externe de la couche métallique, et l’élimination de la couche métallique et de la couche d'oxyde aux emplacements où le faisceau laser pulsé a été appliqué, et l’élimination de la couche métallique au moyen d'une attaque.
PCT/JP2009/058710 2008-05-13 2009-05-08 Substrat avec couche d'oxyde et son procédé de fabrication WO2009139337A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020107025406A KR101529748B1 (ko) 2008-05-13 2009-05-08 산화물층을 갖는 기체와 그의 제조 방법
CN2009801172587A CN102026770A (zh) 2008-05-13 2009-05-08 带有氧化物层的基体及其制造方法
JP2010511962A JP5488461B2 (ja) 2008-05-13 2009-05-08 酸化物層付き基体とその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008-126026 2008-05-13
JP2008126026 2008-05-13

Publications (1)

Publication Number Publication Date
WO2009139337A1 true WO2009139337A1 (fr) 2009-11-19

Family

ID=41318707

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2009/058710 WO2009139337A1 (fr) 2008-05-13 2009-05-08 Substrat avec couche d'oxyde et son procédé de fabrication

Country Status (5)

Country Link
JP (1) JP5488461B2 (fr)
KR (1) KR101529748B1 (fr)
CN (1) CN102026770A (fr)
TW (1) TWI492304B (fr)
WO (1) WO2009139337A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102214539A (zh) * 2010-04-08 2011-10-12 旭硝子株式会社 带金属图案的基板的制造方法及带金属层叠体的基板
WO2013021995A1 (fr) * 2011-08-11 2013-02-14 国立大学法人大阪大学 Procédé de travail sur pellicule
EP2730606A1 (fr) * 2009-11-20 2014-05-14 Uchiyama Manufacturing Corp. Procédé de traitement d'une surface en caoutchouc et élément d'étanchéité
CN106251944A (zh) * 2015-06-11 2016-12-21 株式会社理光 导电图形形成底板以及底板制造方法
CN108499984A (zh) * 2018-04-24 2018-09-07 西南交通大学 一种铝合金氧化膜的激光清洗方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5587522B2 (ja) * 2012-03-09 2014-09-10 昭和電工株式会社 透明導電パターンの製造方法
SG11201505518RA (en) * 2013-01-29 2015-09-29 Jfe Steel Corp Welded can body, welded can, method for manufacturing welded can body, and method for manufacturing welded can
CN103746027B (zh) * 2013-12-11 2015-12-09 西安交通大学 一种在ito导电薄膜表面刻蚀极细电隔离槽的方法
WO2016114934A1 (fr) * 2015-01-13 2016-07-21 Rofin-Sinar Technologies Inc. Procédé et système de découpe d'un matériau fragile suivie d'une attaque chimique
EP3417982A1 (fr) * 2017-06-21 2018-12-26 Heraeus Deutschland GmbH & Co. KG Découpe au laser de substrats en céramique/métal
CN112643209A (zh) * 2020-12-14 2021-04-13 大族激光科技产业集团股份有限公司 一种镀有dlc和pvd薄膜的工件激光加工方法和设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002124690A (ja) * 2000-10-13 2002-04-26 Sharp Corp 薄膜太陽電池及びその製造方法
JP2003305577A (ja) * 2002-04-11 2003-10-28 Sharp Corp レーザ加工装置、それを用いた半導体素子の製造方法およびそれを用いた太陽電池素子の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3153682B2 (ja) * 1993-08-26 2001-04-09 松下電工株式会社 回路板の製造方法
CN100357056C (zh) * 2005-03-04 2007-12-26 江苏大学 激光冲击波三维高防伪无损标识的方法和装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002124690A (ja) * 2000-10-13 2002-04-26 Sharp Corp 薄膜太陽電池及びその製造方法
JP2003305577A (ja) * 2002-04-11 2003-10-28 Sharp Corp レーザ加工装置、それを用いた半導体素子の製造方法およびそれを用いた太陽電池素子の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2730606A1 (fr) * 2009-11-20 2014-05-14 Uchiyama Manufacturing Corp. Procédé de traitement d'une surface en caoutchouc et élément d'étanchéité
CN102214539A (zh) * 2010-04-08 2011-10-12 旭硝子株式会社 带金属图案的基板的制造方法及带金属层叠体的基板
JP2011233872A (ja) * 2010-04-08 2011-11-17 Asahi Glass Co Ltd 金属パターン付き基板の製造方法及び金属積層体付き基板
WO2013021995A1 (fr) * 2011-08-11 2013-02-14 国立大学法人大阪大学 Procédé de travail sur pellicule
CN106251944A (zh) * 2015-06-11 2016-12-21 株式会社理光 导电图形形成底板以及底板制造方法
CN108499984A (zh) * 2018-04-24 2018-09-07 西南交通大学 一种铝合金氧化膜的激光清洗方法

Also Published As

Publication number Publication date
CN102026770A (zh) 2011-04-20
JP5488461B2 (ja) 2014-05-14
KR20110021771A (ko) 2011-03-04
TW201001553A (en) 2010-01-01
TWI492304B (zh) 2015-07-11
JPWO2009139337A1 (ja) 2011-09-22
KR101529748B1 (ko) 2015-06-17

Similar Documents

Publication Publication Date Title
JP5488461B2 (ja) 酸化物層付き基体とその製造方法
US11054712B2 (en) Laser cutting strengthened glass
KR100968389B1 (ko) 투명전극의 제조 방법
US8648278B2 (en) Process for producing substrate provided with metal pattern and substrate provided with metal laminate
WO2007135874A1 (fr) substrat de verre pourvu d'une Électrode transparente et procÉdÉ de fabrication d'un tel substrat de verre
WO2006068204A1 (fr) Substrat avec film conducteur transparent et procédé de mise en motifs idoine
KR20070057807A (ko) 플라즈마 디스플레이 기판용 전극 및/또는 블랙스트라이프의 제조 방법
KR101005454B1 (ko) 보조 배선이 형성된 전극 기체의 제조 방법
JP2005289685A (ja) レーザー照射で異質相が形成されてなる強化ガラス
KR102599939B1 (ko) 은 박막 식각액 조성물 및 이를 이용한 식각 방법 및 금속 패턴의 형성 방법
US20120100774A1 (en) Transparent substrate with thin film and method for manufacturing transparent substrate with circuit pattern wherein such transparent substrate with thin film is used
JP4872585B2 (ja) レーザーパターニング用透明導電膜付き基板およびその製造方法
TWI376978B (en) Laminate for forming substrate with wires, such substrate with wires, and method for forming it
JP4400224B2 (ja) ガラス基板表面の異物除去方法
TWI619847B (zh) 銀線路的黑化方法及顯示裝置
JP2005289046A (ja) 配線付き基体形成用の積層体、配線付き基体およびその形成方法
JPWO2006070648A1 (ja) パターン形成方法および電子回路
KR101109444B1 (ko) 레이저 패터닝용 투명 도전막이 형성된 기판 및 그 제조방법
JP4289396B2 (ja) パターン形成方法、およびこれにより製造される電子回路
WO2013047244A1 (fr) Substrat avec couche conductrice
JP2005308774A (ja) 配線付き基板形成用の積層体、配線付き基板およびその形成方法
WO2006070649A1 (fr) Procede de formation de motifs et circuit electronique

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980117258.7

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09746544

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2010511962

Country of ref document: JP

ENP Entry into the national phase

Ref document number: 20107025406

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09746544

Country of ref document: EP

Kind code of ref document: A1