WO2009107357A1 - 半田の接続方法、電子機器およびその製造方法 - Google Patents
半田の接続方法、電子機器およびその製造方法 Download PDFInfo
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- WO2009107357A1 WO2009107357A1 PCT/JP2009/000780 JP2009000780W WO2009107357A1 WO 2009107357 A1 WO2009107357 A1 WO 2009107357A1 JP 2009000780 W JP2009000780 W JP 2009000780W WO 2009107357 A1 WO2009107357 A1 WO 2009107357A1
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- solder
- adhesive layer
- solder bump
- connection method
- protruding electrode
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49204—Contact or terminal manufacturing
Definitions
- the present invention relates to a solder connection method, an electronic device, and a manufacturing method thereof.
- solder bonding is used.
- a conductive bonding portion between semiconductor chips a conductive bonding portion between a semiconductor chip and a circuit board such as a package on which a flip chip is mounted, It is used for a conductive junction between a circuit board and a circuit board.
- the solder joints are filled with underfill material using capillary action to reinforce the joints and ensure the reliability of the joints. .
- the gap generated by soldering is reinforced with a resin such as an underfill material
- a resin such as an underfill material
- the resin protrudes to an unnecessary place.
- the terminal area for mounting other components may be limited by the resin that protrudes.
- the underfill material using the capillary phenomenon takes a man-hour in the filling process of the underfill material, and causes a cost increase. Therefore, a prescription has been proposed in which an underfill material mixed with a flux in advance is dropped when a semiconductor element is connected to a substrate, and then the underfill material is cured simultaneously with solder connection. This assembly method eliminates the filling process of the underfill material and is effective for significant cost reduction.
- Patent Document 1 describes a method for interconnecting electronic components to a substrate.
- the solder bump and the metal pattern are connected by interposing an adhesive material between the solder bump formed on the electronic component and the metal pattern formed on the substrate.
- the electronic component and the substrate are aligned so that the metal pattern coated with the adhesive material and the solder bump face each other.
- the solder bump is brought close to and brought into contact with the metal pattern by vacuum pressing, and then pressed and crimped until the solder bump is deformed.
- the adhesive material is removed from the contact point between the solder bump and the metal pattern.
- the solder bump and the metal pattern are joined, and the adhesive is cured, so that the electronic component and the substrate are connected.
- Japanese Patent Laid-Open No. 04-280443 Japanese Patent Laid-Open No. 04-280443
- Patent Document 1 has a problem in that the adhesive material covering the metallized pattern is sandwiched between the solder bump and the metallized pattern, resulting in poor electrical connection.
- a solder connection method for electrically connecting a first electronic component having a solder bump and a second electronic component having a protruding electrode, and forming the solder bump provided on the first electronic component.
- Forming the adhesive layer on the same surface as any one of the surfaces of the surface and the projecting electrode provided on the second electronic component, the solder bump and the projecting electrode facing each other, and the first electronic component And a step of aligning the second electronic component and a step of compressing and deforming the solder bump and the protruding electrode by heating and pressurizing the solder bump and the protruding electrode in contact with each other.
- the height of the solder bump before compression deformation is A [ ⁇ m]
- the height of the protruding electrode before compression deformation is B [ ⁇ m]
- the thickness of the adhesive layer is C [ ⁇ m]
- a + B> C
- the height of the solder bump after compression deformation is D [ ⁇ m]
- the height of the bump electrode after compression deformation is E [ ⁇ m]
- the solder bump and the bump electrode are deformed so that D + E becomes substantially the same as C.
- an electronic apparatus having a solder connection portion connected by the above-described solder connection method is provided.
- the solder bump and the protruding electrode are brought into contact with each other with the adhesive layer interposed therebetween, the solder bump and the protruding electrode are formed by using the convex shape of both by further pressing and deforming.
- the adhesive layer can be efficiently removed from the contact point.
- the height of the solder bump before compression deformation is A [ ⁇ m]
- the height of the protruding electrode before compression deformation is B [ ⁇ m]
- the thickness of the adhesive layer is C [ ⁇ m]
- a + B When the adhesive layer is formed so as to satisfy> C, the height of the solder bump after compression deformation is D [ ⁇ m], and the height of the protruding electrode after compression deformation is E [ ⁇ m], D + E is C
- the solder bumps and the protruding electrodes are compressed and deformed so as to be substantially the same as those in FIG. Thereby, it is possible to eliminate the adhesive layer without leaving the adhesive layer at the contact point between the protruding electrode and the solder bump. Therefore, good electrical connection can be obtained at the solder connection portion.
- solder connection method excellent in reliability in the method of connecting solder via the adhesive bond layer which has a flux function, the solder connection method excellent in reliability can be provided. Further, according to the present invention, it is possible to provide an electronic device with excellent reliability.
- connection method of the solder of this embodiment It is a flowchart explaining the connection method of the solder of this embodiment. It is sectional drawing explaining the connection method of the solder of one Embodiment of this invention. It is sectional drawing which shows S101 of FIG. 1 in one Embodiment of this invention. It is sectional drawing which shows S102 of FIG. 1 in one Embodiment of this invention. It is sectional drawing which shows S104 of FIG. 1 in one Embodiment of this invention. It is sectional drawing which shows S105 of FIG. 1 in one Embodiment of this invention.
- the solder connection method of the present invention is a solder connection method for electrically connecting the first electronic component 1 having the solder bumps 13 and the second electronic component 2 having the protruding electrodes 23.
- FIG. 1 is a flowchart illustrating a solder connection method according to this embodiment. 2 to 6 show an embodiment in which the adhesive layer 3 is formed on the same surface as the surface on which the solder bumps 13 provided on the first electronic component 1 are formed in the solder connection method of the present invention. It is sectional drawing explaining the connection method of solder. In the present embodiment, the step (S101, FIG.
- the height of the solder bump 13 before compression deformation is A [ ⁇ m]
- the height of the protruding electrode 23 before compression deformation is B [ ⁇ m]
- the thickness of the adhesive layer 3 is C
- the adhesive layer 3 is formed so as to satisfy A + B> C.
- the solder bump 13 and the bump electrode 23 In the step of compressing and deforming by heating and pressing (S103), the solder bumps 13 and the protruding electrodes 23 are deformed so that D + E becomes substantially the same as C.
- the adhesive layer 3 is composed of a resin composition containing a thermosetting resin and a compound having flux activity. Details of the resin composition constituting the adhesive layer 3 will be described later.
- the solder bump 13 is made of a solder alloy.
- solder alloy For example, lead-free solder such as tin / silver (Ag) solder is used.
- thermosetting resin of the resin composition constituting the adhesive layer 3 Prior to S102, if necessary, heat treatment may be performed so as to pre-cure the thermosetting resin of the resin composition constituting the adhesive layer 3.
- Pre-curing means curing at a temperature lower than the final glass transition temperature. By pre-curing, a part of the curing of the thermosetting resin of the resin composition constituting the adhesive layer 3 is promoted. The minimum melt viscosity of layer 3 can be adjusted.
- the solder bump 13 and the protruding electrode 23 are opposed to each other, and the first electronic component 1 and the second electronic component 2 on which the adhesive layer 3 is formed are aligned.
- the solder bump 13 and the protruding electrode 23 facing each other are placed in the pressing means, the solder bump 13 and the protruding electrode 23 are compressed and deformed by heating and pressing.
- heating is performed at the same time as or before the pressurization to adjust the viscosity of the adhesive layer 3, so that the heating / pressurizing means such as a press is set to a predetermined temperature in advance.
- the heating / pressurizing means such as a press is set to a predetermined temperature in advance
- the first electronic component 1 and the second electronic component 2 have small heat capacities, so they are installed in the heating / pressurizing means.
- the first electronic component 1 and the second electronic component 2 immediately rise in temperature and reach a predetermined temperature in a few seconds.
- the first electronic component 1 and The temperature of the second electronic component 2 will also rise.
- the adhesive layer 3 is formed on the surface on which the solder bumps 13 provided on the first electronic component 1 are formed, it is preferable that at least the first electronic component 1 is heated.
- the viscosity of the adhesive layer 3 when measured at a frequency of 1.0 Hz is 25 ° C. to 10 ° C./min.
- the viscosity decreases as the temperature increases, and after reaching the minimum melt viscosity, increases as the temperature increases, and the minimum melt viscosity is 10 to 10,000 Pa ⁇ s. It is preferable to use the adhesive layer 3.
- D + E is substantially the same as C refers to a state in which the adhesive layer 3 is sandwiched between the first electronic component 1 and the second electronic component 2 without protruding. Specifically, the sum of D and E is 0.9 to 1.1 times C.
- ⁇ is preferably 0.3 to 0.9, and more preferably 0.5 to 0.7.
- solder bump 13 and the protruding electrode 23 are heated below the melting temperature of the solder bump 13. Specifically, it is preferable to heat at a melting temperature of the solder, that is, below the melting point of the solder.
- the adhesive layer 3 is further post-cured (S105).
- Post-cure means that the curing reaction of the thermosetting resin in the resin composition constituting the adhesive layer 3 is allowed to proceed completely. As a result, the adhesive layer 3 is cured and an insulating layer is formed between the first electronic component 1 and the second electronic component 2.
- a first substrate 1 is prepared as the first electronic component 1 and a second substrate 2 is prepared as the second electronic component 2 (FIG. 2).
- the first substrate 1 includes a core substrate 11, terminals 12 provided on one side of the core substrate 11 (lower side in FIG. 2), solder bumps 13 provided so as to cover the terminals 12, a core Solder resist 14a covering one surface side of the substrate 11, circuit wiring 15 provided on the other surface side (upper side in FIG. 2) of the core substrate 11, and the other surface side of the circuit wiring 15 and the core substrate 11 And a solder resist 14b provided so as to cover the surface.
- the second substrate 2 includes a core substrate 21, a terminal 22 provided on one surface side (the upper side in FIG. 2) of the core substrate 21, a protruding electrode 23 provided so as to cover the terminal 22, and a core substrate.
- Solder resist 24a covering one surface side of the circuit board 21, circuit wiring 25 provided on the other surface side of the core substrate 21 (lower side in FIG. 2), circuit wiring 25 and the other surface side of the core substrate 21 And a solder resist 24b provided so as to cover the surface.
- Examples of the material that can be used as the protruding electrode 23 include solder, copper, gold, silver, aluminum, and nickel, preferably copper and nickel that form an intermetallic compound with the solder bump 13, and more preferably, the solder bump. 13 is solder and gold in which the protruding electrodes are melted and integrated. Furthermore, the above-mentioned materials can be used by forming not only one type but also a plurality. For example, a solder connection part with higher connection reliability can be formed by forming solder only at the tip part of a copper protrusion.
- the material of the protruding electrode 23 may be the same solder alloy as that of the solder bump 13.
- As the shape of the protruding electrode 23, a hemispherical shape, a cylindrical shape, or a convex shape such as a gold wire bump can be used.
- the adhesive layer 3 having a flux function is laminated on the side on which the solder bumps 13 of the first substrate 1 are provided, and the adhesive layer 3 having a flux function is disposed (FIG. 3).
- the height A [ ⁇ m] of the solder bump 13 is set from one surface of the first substrate 1 (the lower surface 141 of the solder resist 14a on the lower side of the first substrate 1 in FIG. 3).
- the height B [ ⁇ m] is from one surface of the second substrate 2 (the upper surface 241 of the solder resist 24a on the upper side of the second substrate 2 in FIG. 3), and the thickness of the adhesive layer 3 having a flux function is When C [ ⁇ m], A + B> C.
- the solder bump 13 is brought into contact with the protruding electrode 23 by heating and pressure bonding, and is crushed while removing the adhesive layer 3 interposed between the solder bump 13 and the protruding electrode 23, thereby providing a flux function.
- the tip portion 131 of the solder bump 13 is more easily exposed than the adhesive layer 3 having. Thereby, it is possible to prevent the adhesive layer 3 having a flux function from being sandwiched between the solder bump 13 and the protruding electrode 23 (resin biting) at the time of solder connection.
- the height A [ ⁇ m] of the solder bump 13 from one surface of the first substrate 1 (the lower surface 141 of the solder resist 14a below the first substrate 1) and one surface of the second substrate The relationship between the height B [ ⁇ m] of the protruding electrode 23 from the upper surface 241 of the solder resist 24a on the upper side of the second substrate and the thickness C [ ⁇ m] of the adhesive layer 3 having a flux function is 10 ⁇ A + B ⁇ C ⁇ 100 is preferable, and 20 ⁇ A + B ⁇ C ⁇ 35 is particularly preferable.
- the sum of the height A [ ⁇ m] of the solder bump 13 from one surface 141 of the first substrate 1 and the height B [ ⁇ m] of the protruding electrode 23 from one surface 241 of the second substrate 2 is although not particularly limited, it is preferably 20 to 400 ⁇ m, particularly preferably 50 to 65 ⁇ m. If the sum of the heights is within the above range, a large number of connection terminals are formed in the component, and even if the height variation during solder formation increases to some extent, the solder bumps are pressed to the thickness of the adhesive layer. Since it becomes easy to mutually contact, the yield which obtains a favorable solder connection part can be raised.
- the thickness C [ ⁇ m] of the adhesive layer 3 having a flux function is not particularly limited, but is preferably 10 to 390 ⁇ m, and particularly preferably 30 to 35 ⁇ m. When the thickness is within the above range, the balance between connection reliability and the effect of reducing the occurrence of voids in the adhesive layer is excellent.
- the adhesive layer 3 having the flux function is composed of, for example, a thermosetting resin and a resin composition containing a compound having flux activity.
- thermosetting resin for example, epoxy resin, oxetane resin, phenol resin, (meth) acrylate resin, unsaturated polyester resin, diallyl phthalate resin, maleimide resin and the like are used.
- an epoxy resin excellent in curability and storage stability, heat resistance, moisture resistance, and chemical resistance of a cured product is preferably used.
- the epoxy resin may be either an epoxy resin that is solid at room temperature (25 ° C.) or an epoxy resin that is liquid at room temperature. Further, an epoxy resin that is solid at room temperature and an epoxy resin that is liquid at room temperature may be used in combination. Thereby, the design freedom of the melting behavior of the resin can be further increased.
- the epoxy resin solid at room temperature is not particularly limited, and is not limited to bisphenol A type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, glycidylamine type epoxy resin, glycidyl ester.
- Type epoxy resin trifunctional epoxy resin, tetrafunctional epoxy resin and the like. More specifically, a solid trifunctional epoxy resin and a cresol novolac type epoxy resin may be included.
- the epoxy resin that is liquid at room temperature can be a bisphenol A type epoxy resin or a bisphenol F type epoxy resin. Moreover, you may use combining these.
- the content of the thermosetting resin is not particularly limited, but is preferably 25 to 75% by weight, particularly preferably 45 to 70% by weight, based on the entire resin composition. When the content is within the above range, good curability can be obtained, and good melting behavior can be designed.
- the compound having the flux activity has a function of reducing the oxide film on the surface of the electrode terminal such as a solder bump that hinders connection and removing the oxide film.
- the compound having the flux activity is, for example, a compound having at least one carboxyl group and / or phenolic hydroxyl group in the molecule, and may be liquid or solid.
- Examples of the flux active compound containing a carboxyl group include aliphatic acid anhydrides, alicyclic acid anhydrides, aromatic acid anhydrides, aliphatic carboxylic acids, and aromatic carboxylic acids.
- Examples of the flux active compound having a phenolic hydroxyl group include phenols.
- aliphatic acid anhydride examples include succinic anhydride, polyadipic acid anhydride, polyazeline acid anhydride, polysebacic acid anhydride, and the like.
- Examples of the alicyclic acid anhydride include methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylhymic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, methylcyclohexene dicarboxylic acid. An anhydride etc. are mentioned.
- aromatic acid anhydride examples include phthalic anhydride trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic anhydride, ethylene glycol bistrimellitate, and glycerol tris trimellitate.
- Examples of the aliphatic carboxylic acid include compounds represented by the following formula (1).
- n in the above formula (1) is preferably 3 or more and 10 or less from the balance of flux activity, outgas at the time of adhesion, and the elastic modulus after curing of the adhesive and the glass transition temperature.
- the adhesive can be uniformly melted without generating voids. Therefore, the adhesive layer can be cured without generating outgas.
- n 3 or more the increase in the elasticity modulus after hardening of an adhesive agent can be suppressed and adhesiveness with a to-be-adhered object can be improved. Further, by setting n to 10 or less, it is possible to suppress a decrease in elastic modulus and further improve connection reliability.
- aliphatic carboxylic acids include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, pivalic acid, caproic acid, caprylic acid, lauric acid, myristic acid, palmitic acid, stearic acid, acrylic acid, methacrylic acid, crotonic acid Oleic acid, fumaric acid, maleic acid, oxalic acid, malonic acid, oxalic acid and the like.
- aromatic carboxylic acid examples include benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, hemimellitic acid, trimellitic acid, trimesic acid, merophanic acid, platnic acid, pyromellitic acid, merit acid, triylic acid, xylic acid, Hemelic acid, mesitylene acid, prenylic acid, toluic acid, cinnamic acid, salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6- Dihydroxybenzoic acid, 3,5-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, etc. Naphthoic acid derivatives; phenolphthaline; diphenolic acid and the like.
- Examples of the flux active compound having a phenolic hydroxyl group include phenol, o-cresol, 2,6-xylenol, p-cresol, m-cresol, o-ethylphenol, 2,4-xylenol, 2,5 xylenol, m- Ethylphenol, 2,3-xylenol, meditol, 3,5-xylenol, p-tertiarybutylphenol, catechol, p-tertiaryamylphenol, resorcinol, p-octylphenol, p-phenylphenol, bisphenol A, bisphenol F, bisphenol Monomers containing phenolic hydroxyl groups such as AF, biphenol, diallyl bisphenol F, diallyl bisphenol A, trisphenol, tetrakisphenol, phenol novolac resin, o-creso Novolac resins, bisphenol F novolac resin, bisphenol A novolac resins.
- the flux active compound is three-dimensionally incorporated by reaction with a thermosetting resin such as an epoxy resin, at least two phenolic hydroxyl groups that can be added to the epoxy resin in one molecule, and metal oxidation
- a thermosetting resin such as an epoxy resin
- at least two phenolic hydroxyl groups that can be added to the epoxy resin in one molecule, and metal oxidation
- a compound having at least one carboxyl group directly bonded to an aromatic group exhibiting a flux action on the membrane is preferable.
- examples of such compounds include 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6-dihydroxybenzoic acid, and 3,4-dihydroxybenzoic acid.
- Benzoic acid derivatives such as gallic acid (3,4,5-trihydroxybenzoic acid); 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3,7-dihydroxy-2 -Naphthoic acid derivatives such as naphthoic acid; phenolphthaline; and diphenolic acid.
- These flux active compounds may be used alone or in combination of two or more.
- the content of the compound having the flux activity is not particularly limited. However, from the viewpoint of improving the flux activity, the content is preferably 1% by weight or more, particularly preferably 5% by weight or more of the entire resin composition. . If the thermosetting resin and the unreacted flux active compound remain, it causes migration. Therefore, in order to prevent a flux active compound that does not react with the thermosetting resin from remaining, the content of the flux active compound is not particularly limited, but is preferably 30% by weight or less of the entire resin composition. In particular, it is preferably 25% by weight or less. Within the above range, the oxide film on the surface of the copper foil is reduced, and a good bond with high strength can be obtained.
- the resin composition is not particularly limited, but preferably contains a curing agent for the thermosetting resin.
- the curing agent examples include phenols, amines, and thiols.
- an epoxy resin is used as the thermosetting resin, good reactivity with the epoxy resin, low dimensional change during curing, and appropriate physical properties after curing (for example, heat resistance, moisture resistance, etc.) are obtained.
- Phenols are preferably used.
- the resin composition containing no acid anhydride is difficult to absorb moisture and can prevent an increase in the viscosity of the adhesive layer. Therefore, it is preferable because a good solder connection can be achieved.
- the phenols are not particularly limited, but are preferably bifunctional or higher considering the physical properties after curing of the adhesive.
- Examples include bisphenol A, tetramethylbisphenol A, diallyl bisphenol A, biphenol, bisphenol F, diallyl bisphenol F, trisphenol, tetrakisphenol, phenol novolacs, cresol novolacs, etc., but melt viscosity, reaction with epoxy resin
- phenol novolacs and cresol novolacs can be preferably used.
- the content thereof is not particularly limited. However, from the viewpoint of reliably curing the resin, it is preferably 5% by weight or more, particularly 10% by weight based on the total resin composition. The above is preferable. If epoxy resin and unreacted phenol novolac remain, it causes migration. Therefore, in order not to remain as a residue, it is preferably 30% by weight or less, and particularly preferably 25% by weight or less, based on the entire resin composition.
- the content of the phenol novolac resin may be defined by an equivalent ratio with respect to the epoxy resin.
- the equivalent ratio of the phenol novolac to the epoxy resin is not particularly limited, but is preferably 0.5 or more and 1.2 or less, particularly preferably 0.6 or more and 1.1 or less, and most preferably 0.7 Above, 0.98 or less is preferable.
- an imidazole compound having a melting point of 150 ° C. or higher can be used as another curing agent. If the melting point of the imidazole compound is too low, the adhesive resin may be cured before the solder powder moves to the electrode surface, resulting in unstable connection or reduced storage stability of the adhesive. Therefore, the melting point of imidazole is preferably 150 ° C. or higher. Examples of the imidazole compound having a melting point of 150 ° C. or higher include 2-phenylhydroxyimidazole and 2-phenyl-4-methylhydroxyimidazole.
- fusing point of an imidazole compound For example, it can set suitably according to the adhesion temperature of an adhesive agent.
- the content thereof is not particularly limited, but it is preferably 5 ⁇ 10 ⁇ 3 wt% or more and 10 wt% or less, particularly 1 ⁇ 10 5 of the entire resin composition. It is preferable that the content be ⁇ 2 wt% or more and 5 wt% or less.
- the melt viscosity of the resin is not too high at the temperature at which the solder melts, and a good solder joint structure is obtained. Moreover, the preservability of the adhesive can be further improved.
- These curing agents may be used alone or in combination of two or more.
- the film forming resin is included. Thereby, the film forming property to a film can be improved.
- the film-forming resin include phenoxy resin, polyester resin, polyurethane resin, polyimide resin, siloxane-modified polyimide resin, polybutadiene, polypropylene, styrene-butadiene-styrene copolymer, styrene-ethylene-butylene-styrene copolymer, Polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, polyamide resin, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, polyvinyl acetate, nylon Acrylic rubber or the like can be used. These may be used alone or in combination of two
- a phenoxy resin When a phenoxy resin is used as the film forming resin, its number average molecular weight is not particularly limited, but a phenoxy resin having a molecular weight of 5,000 to 15,000 is preferable. By using such a phenoxy resin, the fluidity of the adhesive before curing can be suppressed and the interlayer thickness can be made uniform.
- the skeleton of the phenoxy resin include, but are not limited to, bisphenol A type, bisphenol F type, and biphenyl skeleton type.
- a phenoxy resin having a saturated water absorption rate of 1% or less is preferable because foaming, peeling, and the like can be suppressed even at high temperatures during bonding and solder mounting.
- a resin having a functional group such as a nitrile group, an epoxy group, a hydroxyl group, or a carboxyl group may be used for the purpose of improving adhesiveness or compatibility with other resins.
- a resin for example, an acrylic rubber having a functional group can be used.
- acrylic rubber having a functional group
- the elastic modulus of the adhesive can be reduced and the residual stress between the adherend and the adhesive can be reduced, the adhesion to the adherend can be improved.
- the content of the film-forming resin is not particularly limited, but is preferably 5% by weight or more and 45% by weight or less of the entire resin composition.
- a decrease in film formability is suppressed and an increase in the elastic modulus after curing of the adhesive is suppressed. Can be improved.
- the increase in the melt viscosity of an adhesive agent is suppressed by setting it as the said range.
- the resin composition is not particularly limited, but preferably contains a silane coupling agent.
- a silane coupling agent include epoxy silane coupling agents and aromatic-containing aminosilane coupling agents. These may be used alone or in combination of two or more.
- the content of the silane coupling agent is not particularly limited, but is preferably 1 ⁇ 10 ⁇ 2 to 5% by weight, particularly preferably 0.1 to 1% by weight, based on the entire resin composition. When the content is within the above range, the effect of improving the adhesion is particularly excellent.
- the resin composition may contain components other than those described above.
- various additives may be appropriately added in order to improve various properties such as resin compatibility, stability, and workability.
- Such a resin composition is dissolved in an aromatic hydrocarbon solvent such as toluene or xylene, an ester organic solvent such as ethyl acetate or butyl acetate, or a ketone organic solvent such as acetone or methyl ethyl ketone, and the resulting varnish is polyester.
- the adhesive layer 3 formed on the polyester sheet is obtained by applying to a sheet and drying at a temperature at which the solvent evaporates to produce an adhesive sheet.
- the adhesive layer 3 having a flux function is laminated on the side on which the solder bumps 13 of the first substrate 1 are provided, and the polyester sheet is peeled to obtain the adhesive layer 3 having a flux function. (S101, FIG. 3).
- the solder bumps 13 and the protruding electrodes 23 are compressed and deformed so as to be substantially the same as the thickness C [ ⁇ m] of the adhesive layer 3 having (S103, FIG. 5).
- the height A [ ⁇ m] of the solder bump 13 before compression deformation, the height B [ ⁇ m] of the protruding electrode 23 and the thickness C [ ⁇ m] of the adhesive layer 3 having a flux function are as follows. A + B> C (FIG. 3).
- the solder bumps 13 and the protruding electrodes 23 are deformed by heating and pressurizing, and thereby the height of the solder bumps 13 after compression deformation is increased.
- the sum of the thickness D [ ⁇ m] and the height E [ ⁇ m] of the protruding electrode 23 after compressive deformation is made substantially the same as the thickness C [ ⁇ m] of the adhesive layer 3 having a flux function (FIG. 5).
- the heating / pressurizing is preferably performed under the condition that the curing reaction of the thermosetting resin in the resin composition constituting the adhesive layer 3 having the flux function does not substantially proceed.
- the temperature is preferably lower than the glass transition temperature of the curable resin in the adhesive layer 3. This facilitates the removal of the adhesive layer 3 having a flux function that covers the tip of the solder bump 13.
- More specific heating conditions are not particularly limited, but 80 to 150 ° C. ⁇ 5 seconds to 5 minutes are preferable, and 90 to 120 ° C. ⁇ 30 seconds to 2 minutes are particularly preferable.
- the pressurizing condition is not particularly limited, but is preferably 0.4 to 1.0 [MPa], particularly preferably 0.6 to 0.9 [MPa]. When the heating / pressurizing condition is within the above range, the effect of reducing the generation of voids due to poor filling of the adhesive layer 3 having a flux function, particularly in the vicinity of the solder bump, is excellent.
- solder connection step in which the solder is melted to connect the solder bump 13 and the protruding electrode 23.
- solder bump 13 and the protruding electrode 23 are solder-connected (S104, FIG. 6).
- solder connection by heating at 220 to 260 ° C. for 30 to 120 seconds, particularly 230 to 240 ° C. for 60 to 100 seconds. It is preferable to do.
- this heating is preferably performed so that the thermosetting resin constituting the adhesive layer 3 is cured after the solder bumps 13 and the protruding electrodes 23 are melted. That is, it is preferable that the solder of the solder bump is melted before the thermosetting resin constituting the adhesive layer 3 by heating is cured. This is because if the thermosetting resin is cured before the solder is melted, the shape of the solder connection portion is fixed by the curing of the thermosetting resin, and a suitable shape may not be obtained.
- solder bump 13 and the protruding electrode 23 are melted as described above and the thermosetting resin constituting the adhesive layer 3 is heated to be cured, the solder bump 13 and the protruding electrode 23 are When crimped and deformed, the solder melts not only at the front end portion of each solder bump but also at the peripheral portion (end portion), and a stable connection portion shape can be obtained.
- the melt viscosity decreases at the beginning and further increases after reaching the minimum melt viscosity.
- the minimum melt viscosity when having such properties is not particularly limited, but is preferably 10 to 10,000 Pa ⁇ s, more preferably 100 to 5,000 Pa ⁇ s, and particularly 1,000 to 2,000 Pa ⁇ s. Is preferred.
- the minimum melt viscosity of the adhesive layer 3 having a flux function is within the above range, particularly, the reduction of voids generated in the adhesive layer during heat treatment due to moisture absorption of the electronic component and gas components generated from the electronic component itself, and The effect of eliminating the adhesive layer between the solder bump 13 and the bump electrode 23 is excellent.
- the minimum melt viscosity is less than the lower limit value, the solder bumps may be scattered in the resin other than between the terminals due to the flow of the resin. If the upper limit is exceeded, the solder bumps may not be integrated with each other, and the shape of the solder bumps may be maintained.
- the adhesive layer 3 can ensure appropriate physical properties (for example, heat resistance, moisture resistance, etc.).
- the curing step is not particularly limited as long as the thermosetting resin constituting the adhesive layer 3 having a flux function is cured. Specifically, the curing step is preferably 160 to 200 ° C, particularly preferably 170 to 190 ° C. .
- the solder connection portion 5 can be formed through the adhesive layer 3 having a flux function between the solder bump 13 of the first substrate 1 and the protruding electrode 23 of the second substrate 2.
- the solder joint has been filled with an underfill material that utilizes capillary action to reinforce the joint, and the joint has been formed. Since the formation of the solder and the reinforcement of the solder joint portion with the resin can be performed at the same time, the process can be greatly shortened. Furthermore, it is possible to stack the insulating layers of the multilayer substrate formed for each layer in a lump and form the conductors in a lump.
- the solder bump 13 and the protruding electrode 23 are brought into contact with each other with the adhesive layer 3 interposed therebetween, and then further deformed by pressure bonding.
- the adhesive layer 3 can be efficiently removed from the connection portion with the protruding electrode 23.
- the height of the solder bump 13 before compression deformation is A [ ⁇ m]
- the height of the protruding electrode 23 before compression deformation is B [ ⁇ m]
- the thickness of the adhesive layer 3 is C [ ⁇ m].
- the adhesive layer 3 is formed so as to satisfy A + B> C
- the height of the solder bump 13 after compression deformation is D [ ⁇ m]
- the height of the protruding electrode 23 after compression deformation is E [ ⁇ m].
- the adhesive layer 3 can be removed without leaving the connection portion between the protruding electrode 23 and the solder bump 13. Therefore, good electrical connection can be obtained at the solder connection portion. Furthermore, by using the adhesive layer 3 having a flux function, when the solder of the solder bumps 13 is melted, the solder wets and spreads on the protruding electrodes, and the joint shape can be further stabilized.
- underfill materials mixed with flux have been widely used liquid epoxy as the main agent and phthalic anhydride acid anhydride as the curing agent.
- the reason is that the acid anhydride itself of the curing agent has a flux action, and further, if necessary, the flux property can be enhanced by adding an acid anhydride in excess of the equivalent to the epoxy.
- the viscosity decreases as the temperature increases, and after reaching the minimum melt viscosity, the viscosity increases as the temperature increases.
- the minimum melt viscosity is 10 to 10,000 Pa ⁇ s.
- Examples of the electronic component of this embodiment include an organic substrate having solder bumps, a ceramic substrate having solder bumps, and a semiconductor element having solder bumps.
- the solder joint portion of the electronic device can be formed using the solder joint method of the present embodiment.
- an electronic device for example, a semiconductor device in which the electronic components described above are electrically connected can be cited.
- the embodiments of the present invention have been described with reference to the drawings. However, these are exemplifications of the present invention, and various configurations other than the above can be adopted.
- the method of forming the adhesive layer 3 on the same surface as the formation surface of the solder bump 13 provided in the first electronic component 1 has been described as an example.
- the adhesive layer 3 may be formed on the same surface as the surface on which the protruding electrode 23 provided on the second electronic component 2 is formed.
- Examples 1 to 6 and Comparative Example 1 Manufacture of adhesive tape
- Each component shown in Table 1 was dissolved in methyl ethyl ketone to obtain a resin varnish.
- This resin varnish was applied to a polyester sheet, dried at 80 ° C. for 3 minutes, and then dried at 120 ° C. for 3 minutes to obtain an adhesive layer (adhesive tape) having a flux function of thickness C ⁇ m.
- surface is the weight% with respect to the total amount of a compounding component.
- First electronic component 1 and first substrate shown in FIG. Two electronic components 2 were produced as follows.
- a double-sided copper-clad laminate (ELC-4785GS manufactured by Sumitomo Bakelite Co., Ltd.) with a 12 ⁇ m copper foil is etched to form a copper circuit pattern, and then the copper circuit pattern is roughened to form a solder resist (Taiyo Ink Manufacturing Co., Ltd.) PSR-AUS703) 14a, b, 24a, b are printed on both sides with a thickness of 15 ⁇ m on a copper circuit, exposed and developed to form an opening of 200 ⁇ m, and then onto the copper circuit pattern of the opening An electroless nickel layer is formed with a thickness of 3 ⁇ m, an electroless gold plating layer is formed with a thickness of 0.03 ⁇ m, and a solder (Sn / 3.5 Ag) paste is printed and formed to a desired height, and the solder paste is melted by reflow.
- EEC-4785GS manufactured by Sumitomo Bakelite Co., Ltd.
- the melting temperature of the solder bumps 13 and 23 was 221 ° C.
- the adhesive layer 3 with a flux function of 30 ⁇ m in thickness is vacuum-pressed (MVLP-500 manufactured by Meiki Seisakusho).
- the polyester film was peeled off at 120 ° C. and 0.8 MPa for 30 seconds.
- the solder bumps 13 of the first substrate 1 and the solder bumps 23 of the second substrate 2 are aligned so as to face each other, and the solder bumps 13 and 23 are brought into contact with each other by a vacuum press. 23 was compressed and deformed by heating and pressing at 120 ° C., 0.8 MPa for 30 seconds.
- solder bumps 13 and 23 were bonded to each other by pressing with a flat plate press (MSA-2 manufactured by System Development Co., Ltd.) at 240 ° C. and 0.3 MPa for 120 seconds. Furthermore, in order to cure the adhesive layer 3, a heat history for 60 minutes at 180 ° C. was applied to obtain a multilayer circuit board (electronic component).
- MSA-2 manufactured by System Development Co., Ltd.
- melt viscosity was measured using the obtained adhesive layer with a flux function (adhesive tape). Specifically, an adhesive tape having a thickness of 100 ⁇ m was measured with a viscoelasticity measuring apparatus (manufactured by Jusco International) at a temperature rising rate of 10 ° C./min, a frequency of 1.0 Hz, with constant strain-stress detection, and the ambient temperature was When measured up to 300 ° C., the melt viscosity initially decreased, and after reaching the minimum melt viscosity, the minimum melt viscosity when further increased was examined.
- a flux function adheresive tape
- the adhesive tape of Example 2 was heat treated at 100 ° C. for 60 minutes as a pre-cure before positioning so that the solder bumps 13 of the first substrate 1 and the solder bumps 23 of the second substrate 2 face each other. As a result, the resin was partially cured to adjust the minimum melt viscosity.
- Each code is as follows. A: There were 20 multilayer circuit boards in which conduction was obtained at all bump connection portions. A: There were 18 or 19 multilayer circuit boards in which conduction was obtained at all bump connection portions. (Triangle
- Examples 1 to 6 have a stable solder joint cross-sectional shape and are excellent in reliability.
- Example 7 In accordance with the electronic component manufacturing method described above, the first substrate (substrate with solder bumps) on which solder bumps having a height of 40 ⁇ m are formed from the solder resist and the solder bumps having heights of 40 ⁇ m are formed from the solder resist. Two substrates (substrates with solder bumps) were obtained. Subsequently, as described above, the solder bumps of the first substrate and the second substrate were joined to each other using the adhesive tape of Example 1 to produce a multilayer circuit board (electronic component). About the obtained multilayer circuit board, according to the method demonstrated above, connectivity, the junction cross section, and the spreading
- the results similar to those of Example 1 were obtained for all of the connectivity, the cross-sectional shape of the solder joint, and the spread amount of the resin.
- Example 8 According to the method for manufacturing an electronic component described above, the first substrate (substrate with solder bumps) on which solder bumps having a height of 18 ⁇ m are formed from the solder resist and the solder bumps having heights of 18 ⁇ m from the solder resist are formed. Two substrates (substrates with solder bumps) were obtained. Subsequently, as described above, the solder bumps of the first substrate and the second substrate were joined to each other using the adhesive tape of Comparative Example 1 to produce a multilayer circuit substrate (electronic component). About the obtained multilayer circuit board, according to the method demonstrated above, it evaluated about the connection rate, the junction cross section, and the spreading
- a first electronic component having a first solder bump and a second electronic component having a protruding electrode are electrically connected to each other through the adhesive layer having a flux function.
- a method of connecting solder to be connected wherein the height of the first solder bump from one surface of the first electronic component is A [ ⁇ m], and the height of the protruding electrode from one surface of the second electronic component is B + [mu] m, and the thickness of the adhesive layer having the flux function is C [[mu] m], and A + B> C, and the adhesive layer having the flux function is disposed on the first electronic component.
- the sum of the height A [ ⁇ m] of the first solder bump and the height B [ ⁇ m] of the protruding electrode is substantially the same as the thickness C [ ⁇ m] of the adhesive layer having the flux function.
- the first solder bump and the protruding electrode are heated and heated so that To the causes deforming the first solder bump and the projecting electrodes, solder connection method characterized by having a contact step of contacting the protrusion electrode and the first solder bump.
- the solder connection method according to (1) further including a curing step of curing the adhesive layer having the flux function.
- (3) The solder connection method according to (1), wherein the adhesive layer having the flux function is composed of a resin composition containing a thermosetting resin and a compound having flux activity.
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Abstract
Description
更に、毛細管現象を利用したアンダーフィル材は、アンダーフィル材の充填工程に工数がかかりコストアップの原因ともなっている。そこで、半導体素子を基板に接続する際に予めフラックスを混合したアンダーフィル材を滴下、その後半田接続と同時にアンダーフィル材を硬化させる処方が提案されている。このアセンブリ方法は、アンダーフィル材の充填工程を省き大幅なコストダウンに有効である。
また、本発明の目的は、信頼性に優れた電子機器を提供することにある。
また、本発明によれば、信頼性に優れた電子機器を提供することができる。
S102で、半田バンプ13と突起電極23とを対向させて、接着剤層3が形成された第1電子部品1と第2電子部品2とを位置合わせしたのち、S103で、プレス等の加熱・加圧手段に設置し、互いに対向している半田バンプ13および突起電極23を接触させた状態で、半田バンプ13および突起電極23を、加熱および加圧して圧縮変形させる。S103では、加圧と同時又はそれより前に加熱を行って、接着剤層3の粘度を調整するため、プレス等の加熱・加圧手段は、予め所定温度に設定しておいても、第1電子部品1と第2電子部品2を設置した後に、加熱、昇温してもよい。プレス等の加熱・加圧手段を予め所定温度に設定した場合には、第1電子部品1および第2電子部品2は、いずれもその熱容量が小さいものであるため、加熱・加圧手段に設置された段階で、第1電子部品1および第2電子部品2は直ぐに昇温し、数秒で所定温度に達する。第1電子部品1と第2電子部品2を加熱・加圧手段に設置した後に、加熱、昇温する場合には、加熱・加圧手段の温度上昇に追随して、第1電子部品1および第2電子部品2も温度上昇することとなる。第1電子部品1に設けられた半田バンプ13の形成面に接着剤層3を形成した本実施形態においては、少なくとも第1電子部品1が加熱されることが好ましい。
その後、さらに接着剤層3をポストキュアする(S105)。ポストキュアとは、接着剤層3を構成する樹脂組成物中の熱硬化性樹脂の硬化反応を完全に進行させることをいう。これにより、接着剤層3が硬化して第1電子部品1と第2電子部品2との間に絶縁層が形成される。
これらのフラックス活性化合物は、単独で用いても、2種以上を組み合わせて用いてもよい。
これらの硬化剤は、単独で用いてもよいし、2種類以上を組み合わせて用いても良い。
前記製膜性樹脂としては、例えばフェノキシ樹脂、ポリエステル樹脂、ポリウレタン樹脂、ポリイミド樹脂、シロキサン変性ポリイミド樹脂、ポリブタジエン、ポリプロピレン、スチレン-ブタジエン-スチレン共重合体、スチレン-エチレン-ブチレン-スチレン共重合体、ポリアセタール樹脂、ポリビニルブチラール樹脂、ポリビニルアセタール樹脂、ブチルゴム、クロロプレンゴム、ポリアミド樹脂、アクリロニトリル-ブタジエン共重合体、アクリロニトリル-ブタジエン-アクリル酸共重合体、アクリロニトリル-ブタジエン-スチレン共重合体、ポリ酢酸ビニル、ナイロン、アクリルゴム等を用いることができる。これらは、単独で用いても、2種以上を組み合わせて用いてもよい。
前記製膜性樹脂として、(官能基を有する)アクリルゴムが用いられる場合、フィルム状の接着剤を作製する際の成膜安定性を向上させることができる。また、接着剤の弾性率を低下させ、被接着物と接着剤間の残留応力を低減することができるため、被接着物に対する密着性を向上させることができる。
これに対して、上述したように半田バンプ13、突起電極23が融解した後に、接着剤層3を構成する熱硬化性樹脂が硬化するように加熱すると、半田バンプ13と、突起電極23とを圧着して変形させた際に、それぞれの半田バンプの先端部のみならず、周辺部(端部)も半田が溶融して安定した接続部形状を得ることができる。
(接着テープの製造)
表1に示される各成分を、メチルエチルケトンに溶解して樹脂ワニスを得た。この樹脂ワニスをポリエステルシートに塗布し、80℃で3分間乾燥させ、ついで、120℃で3分間乾燥させて、厚さCμmのフラックス機能を有する接着剤層(接着テープ)を得た。なお、表中の配合量は、配合成分の合計量に対する重量%である。
・第1基板1(半田バンプ13を有する第1電子部品1)および第2基板2(突起電極として半田バンプ23を有する第2電子部品2)の作製
図2に示す第1電子部品1および第2電子部品2を以下のように作製した。12μmの銅箔が付いた両面銅張り積層板(住友ベークライト社製 ELC-4785GS)をエッチングし、銅回路パターンを形成したのち、銅回路パターンを粗化処理して、ソルダーレジスト(太陽インキ製造社製 PSR-AUS703)14a、b、24a、bを両面へ銅回路上15μmの厚みで印刷形成し、露光・現像して、200μmの開口部を形成したのち、前記開口部の銅回路パターン上へ無電解ニッケル層を厚み3μm、無電解金めっき層を厚み0.03μmで形成し、さらに所望の高さになるように半田(Sn/3.5Ag)ペーストを印刷形成し、リフローにより半田ペースト溶融させて、ソルダーレジスト14aから高さがAμmの半田バンプ13が形成された第1基板1(半田バンプ付き基板)およびソルダーレジスト24aから高さがBμmの半田バンプ(突起電極)23が形成された第2基板2(半田バンプ付き基板)を得た。なお、半田バンプ13、23の溶融温度は、221℃であった。
第1基板1の半田バンプ13が形成された面に、厚さ30μmのフラックス機能付き接着剤層3を真空プレス(名機製作所製 MVLP‐500)により、120℃、0.8MPa、30秒間で貼着し、ポリエステルフィルムを剥離した。つぎに、第1基板1の半田バンプ13と第2基板2の半田バンプ23とが対向するように位置合わせし、真空プレスにより、半田バンプ13、23を接触させた状態で、半田バンプ13、23を、120℃、0.8MPa、30秒間加熱および加圧して、圧縮変形させた。次いで、平板プレス(システム開発製 MSA-2)により240℃、0.3MPa、120秒間プレスし、半田バンプ13、23同士を接合した。さらに、接着剤層3を硬化させるために180℃、60分間の熱履歴を加え多層回路基板(電子部品)を得た。
得られたフラックス機能付き接着層(接着テープ)を用いて、溶融粘度を測定した。具体的には、厚さ100μmの接着テープを、粘弾性測定装置(ジャスコインターナショナル社製)で昇温速度10℃/min、周波数1.0Hzで、歪み一定-応力検知で測定し、雰囲気温度が300℃まで測定した時に、溶融粘度が初期は減少し、最低溶融粘度に到達した後、さらに上昇した際の前記最低溶融粘度を調べた。
得られた多層回路基板(電子部品)の層間接続抵抗を、デジタルマルチメータにより20ヶ所のバンプ接続部を測定した。測定は、多層回路基板作製後と-65℃で1時間、150℃で1時間の温度サイクル1,000サイクル後の両方を測定した。評価は、n=20で行った。各符号は、以下の通りである。
◎:全てのバンプ接続部で導通が取れた多層回路基板が、20個であった。
○:全てのバンプ接続部で導通が取れた多層回路基板が、18個または19個であった。
△:全てのバンプ接続部で導通が取れた多層回路基板が、16個または17個であった。
×:全てのバンプ接続部で導通が取れた多層回路基板が、15個以下であった。
得られた多層回路基板を、エポキシ樹脂硬化物で包埋し、断面を研磨し、層間接続部分10ヶ所をSEM(走査型電子顕微鏡)により観察した。各符号は、以下の通りである。
○:10ヶ所とも安定した接続形状であった。
×:半田バンプ同士が一体化していないあるいは半田が樹脂中に流れた形状のバンプが1ヶ所以上存在した。
多層回路基板を作製する際に、平板プレスでの圧着前後に超音波探傷機での透過法による映像を観察し、接着剤層の広がりを面積の増加率によって測定した。各符号は、以下の通りである。
◎:樹脂の広がり量が、5.0%以内であった。
○:樹脂の広がり量が、5.0%を超え、10.0%以内であった。
△:樹脂の広がり量が、10.0%を超え~50.0%以内であった。
×:樹脂の広がり量が、50%を超えた。
上記説明した電子部品の製造方法にしたがって、ソルダーレジストから高さが40μmの半田バンプが形成された第1基板(半田バンプ付き基板)およびソルダーレジストから高さが40μmの半田バンプが形成された第2基板(半田バンプ付き基板)を得た。ついで、上記説明したように、実施例1の接着テープを用いて第1基板及び第2基板の半田バンプを互いに接合して多層回路基板(電子部品)を作製した。得られた多層回路基板について、上記説明した方法に従って、接続性、接合部断面、及び加圧による接着剤層の広がり量について評価した。
上記説明した電子部品の製造方法にしたがって、ソルダーレジストから高さが18μmの半田バンプが形成された第1基板(半田バンプ付き基板)およびソルダーレジストから高さが18μmの半田バンプが形成された第2基板(半田バンプ付き基板)を得た。ついで、上記説明したように、比較例1の接着テープを用いて第1基板及び第2基板の半田バンプを互いに接合して多層回路基板(電子部品)を作製した。得られた多層回路基板について、上記説明した方法に従って、接続率、接合部断面、及び加圧による接着剤層の広がり量について評価した。
(1)第1半田バンプを有する第1電子部品と、突起電極を有する第2電子部品とを、フラックス機能を有する接着剤層を介して前記第1半田バンプと前記突起電極とが電気的に接続する半田の接続方法であって、前記第1電子部品の一方の面から第1半田バンプの高さをA〔μm〕とし、前記第2電子部品の一方の面から突起電極の高さをB〔μm〕とし、前記フラックス機能を有する接着剤層の厚さをC〔μm〕としたときA+B>Cであり、前記第1電子部品に、前記フラックス機能を有する接着剤層を配置する工程と、前記第1半田バンプの高さA〔μm〕と、前記突起電極の高さB〔μm〕との和が、前記フラックス機能を有する接着剤層の厚さC〔μm〕とほぼ同じとなるように、前記第1半田バンプおよび前記突起電極を加熱・加圧して、前記第1半田バンプおよび前記突起電極を変形させると共に、前記第1半田バンプと前記突起電極とを接触させる接触工程と、を有することを特徴とする半田の接続方法。
(2)さらに、前記フラックス機能を有する接着剤層を硬化させる硬化工程を有するものである上記(1)に記載の半田の接続方法。
(3)前記フラックス機能を有する接着剤層が、熱硬化性樹脂およびフラックス活性を有する化合物とを含む樹脂組成物で構成されているものである上記(1)に記載の半田の接続方法。
(4)前記接触工程では前記半田バンプが融解した後に、前記熱硬化性樹脂が硬化するように加熱するものである上記(1)に記載の半田の接続方法。
(5)前記フラックス機能を有する接着剤を常温から10℃/分の昇温速度で溶融状態まで昇温したときに初期は溶融粘度が減少し、最低溶融粘度に到達した後、さらに上昇するような特性を有し、かつ前記最低溶融粘度が10~10,000Pa・s以下である上記(4)に記載の半田の接続方法。
(6)上記(1)ないし(5)のいずれかに記載の半田の接続方法で接続された半田接続部を有することを特徴とする電子機器。
Claims (18)
- 半田バンプを有する第1電子部品と突起電極を有する第2電子部品とを電気的に接続する半田の接続方法であって、
前記第1電子部品に設けられた前記半田バンプの形成面及び前記第2電子部品に設けられた前記突起電極の形成面のいずれか一方の面と同一の面に接着剤層を形成する工程と、
前記半田バンプと前記突起電極とを対向させて、前記第1電子部品と前記第2電子部品とを位置合わせする工程と、
互いに対向している前記半田バンプおよび前記突起電極を接触させた状態で、前記半田バンプおよび前記突起電極を、加熱および加圧して、圧縮変形させる工程と、
を含み、
圧縮変形前の前記半田バンプの高さをA〔μm〕とし、圧縮変形前の前記突起電極の高さをB〔μm〕とし、前記接着剤層の厚さをC〔μm〕としたとき、前記接着剤層を形成する前記工程において、A+B>Cを満たすように前記接着剤層を形成し、
圧縮変形後の前記半田バンプの高さをD〔μm〕とし、圧縮変形後の前記突起電極の高さをE〔μm〕としたとき、前記半田バンプおよび前記突起電極を圧縮変形させる前記工程において、D+EがCとほぼ同じになるように、前記半田バンプと前記突起電極とを変形させること、
を特徴とする半田の接続方法。 - 前記半田バンプおよび前記突起電極を圧縮変形させる前記工程において、0.9×C≦D+E≦1.1×Cを満たすように前記半田バンプと前記突起電極とを変形させる、請求項1に記載の半田の接続方法。
- 前記半田バンプおよび前記突起電極を圧縮変形させる前記工程の後に、前記接着剤層を硬化させる工程をさらに含む、請求項1に記載の半田の接続方法。
- 前記接着剤層は、熱硬化性樹脂を含む樹脂組成物であり、
前記第1電子部品と前記第2電子部品とを位置合わせする前記工程の前に、前記接着剤層をプリキュアする工程を含む、請求項2に記載の半田の接続方法。 - 前記接着剤層は、熱硬化性樹脂を含む樹脂組成物であり、
前記半田バンプおよび前記突起電極を圧縮変形させる前記工程の後に、前記半田バンプと前記突起電極とを溶融して接合する工程と、
前記半田バンプと前記突起電極とを接合する前記工程の後に、前記接着剤層をポストキュアする工程と、
を含む、請求項2に記載の半田の接続方法。 - 前記半田バンプおよび前記突起電極を圧縮変形させる前記工程において、前記半田バンプおよび前記突起電極を前記半田バンプの溶融温度未満で加熱する、請求項2に記載の半田の接続方法。
- 周波数1.0Hzで測定したときの前記接着剤層の粘度は、25℃から10℃/分の昇温速度で溶融するまで昇温するとき温度の上昇とともに低下し、最低溶融粘度に到達した後温度の上昇とともに上昇し、
前記最低溶融粘度が10~10,000Pa・sである、請求項1に記載の半田の接続方法。 - 周波数1.0Hzで測定したときの前記接着剤層の粘度は、25℃から10℃/分の昇温速度で溶融するまで昇温するとき温度の上昇とともに低下し、最低溶融粘度に到達した後温度の上昇とともに上昇し、前記最低溶融粘度が10~10,000Pa・sである、請求項2に記載の半田の接続方法。
- 周波数1.0Hzで測定したときの前記接着剤層の粘度は、25℃から10℃/分の昇温速度で溶融するまで昇温するとき温度の上昇とともに低下し、最低溶融粘度に到達した後温度の上昇とともに上昇し、前記最低溶融粘度が10~10,000Pa・sである、請求項5に記載の半田の接続方法。
- α=(D+E)/(A+B)としたとき、αが0.3~0.9である請求項2に記載の半田の接続方法。
- 前記接着剤層が、熱硬化性樹脂とフラックス活性を有する化合物とを含む樹脂組成物で構成されている、請求項2に記載の半田の接続方法。
- 前記樹脂組成物がさらに硬化剤を含み、実質的に酸無水物を含まない、請求項11に記載の半田の接続方法。
- 前記熱硬化性樹脂がエポキシ樹脂であり、
前記フラックス活性を有する化合物が脂肪族カルボン酸または芳香族カルボン酸であり、
前記硬化剤がフェノール樹脂である、請求項12に記載の半田の接続方法。 - 前記脂肪族カルボン酸がアジピン酸であり、
前記芳香族カルボン酸が3,5-ジヒドロキシ-2-ナフトエ酸である、請求項13に記載の半田の接続方法。 - 前記接着剤層が、フラックス活性を有する化合物と硬化剤とをさらに含み、
前記熱硬化性樹脂がエポキシ樹脂であり、
前記フラックス活性を有する化合物が脂肪族カルボン酸または芳香族カルボン酸であり、
前記硬化剤がフェノール樹脂である、請求項5に記載の半田の接続方法。 - 前記接着剤層が、熱硬化性樹脂とフラックス活性を有する化合物と硬化剤とを含み、
前記熱硬化性樹脂がエポキシ樹脂であり、
前記フラックス活性を有する化合物が脂肪族カルボン酸または芳香族カルボン酸であり、
前記硬化剤がフェノール樹脂である、請求項6に記載の半田の接続方法。 - 請求項1乃至16いずれかに記載の半田の接続方法で接続された半田接続部を有する電子機器。
- 請求項1乃至16いずれかに記載の半田の接続方法を用いた電子機器の製造方法。
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CN2009801070422A CN101960932B (zh) | 2008-02-29 | 2009-02-24 | 焊料连接的方法、电子器件及其制造方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011165879A (ja) * | 2010-02-09 | 2011-08-25 | Sumitomo Bakelite Co Ltd | 端子間の接続方法 |
JP2011187488A (ja) * | 2010-03-04 | 2011-09-22 | Sumitomo Bakelite Co Ltd | 導電接続材料の製造方法、端子間の接続方法、接続端子の形成方法、半導体装置および電子機器 |
US20210051803A1 (en) * | 2018-03-05 | 2021-02-18 | Heraeus Deutschland GmbH & Co. KG | Method for producing a sandwhich arrangement |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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KR20130059153A (ko) * | 2011-11-28 | 2013-06-05 | 현대자동차주식회사 | 접착제를 이용한 금속재와 고분자 복합재 결합체의 제조방법 |
JP5531188B2 (ja) * | 2012-03-12 | 2014-06-25 | 株式会社弘輝 | フラックス、はんだ組成物および電子回路実装基板の製造方法 |
KR20140019173A (ko) * | 2012-08-06 | 2014-02-14 | 삼성전기주식회사 | 솔더 코팅볼을 이용한 패키징 방법 및 이에 따라 제조된 패키지 |
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CN113645758B (zh) * | 2021-08-11 | 2023-04-07 | 京东方科技集团股份有限公司 | 柔性电路板及其制造方法、显示装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04280443A (ja) | 1990-09-27 | 1992-10-06 | Motorola Inc | 熱硬化可能な接着剤およびこれを用いた電気的コンポーネント組立体 |
JP2000244114A (ja) * | 1999-02-23 | 2000-09-08 | Matsushita Electric Works Ltd | ビルドアップ多層配線板の製造方法 |
JP2005209833A (ja) * | 2004-01-22 | 2005-08-04 | Sony Corp | 半導体装置の製造方法 |
JP2007059538A (ja) * | 2005-08-23 | 2007-03-08 | Denso Corp | バンプ接合体の製造方法 |
JP2007141963A (ja) * | 2005-11-15 | 2007-06-07 | Denso Corp | 基板の実装方法、及びその実装方法で実装された半導体装置 |
JP2007258508A (ja) * | 2006-03-24 | 2007-10-04 | Sumitomo Bakelite Co Ltd | 半導体用接着剤、これを用いた半導体装置および半導体装置の製造方法 |
WO2008023452A1 (fr) * | 2006-08-25 | 2008-02-28 | Sumitomo Bakelite Co., Ltd. | Bande adhésive, structure de jonction, et ensemble semi-conducteur |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6260264B1 (en) * | 1997-12-08 | 2001-07-17 | 3M Innovative Properties Company | Methods for making z-axis electrical connections |
JP3622462B2 (ja) * | 1997-12-16 | 2005-02-23 | 株式会社日立製作所 | 半導体装置 |
JP4609617B2 (ja) * | 2000-08-01 | 2011-01-12 | 日本電気株式会社 | 半導体装置の実装方法及び実装構造体 |
US7331502B2 (en) * | 2001-03-19 | 2008-02-19 | Sumitomo Bakelite Company, Ltd. | Method of manufacturing electronic part and electronic part obtained by the method |
-
2009
- 2009-02-24 JP JP2010500558A patent/JPWO2009107357A1/ja active Pending
- 2009-02-24 WO PCT/JP2009/000780 patent/WO2009107357A1/ja active Application Filing
- 2009-02-24 CN CN2009801070422A patent/CN101960932B/zh not_active Expired - Fee Related
- 2009-02-24 EP EP09715856A patent/EP2257143A1/en not_active Withdrawn
- 2009-02-24 KR KR1020107019290A patent/KR20100120294A/ko not_active Application Discontinuation
- 2009-02-24 US US12/866,457 patent/US8079141B2/en not_active Expired - Fee Related
- 2009-02-27 TW TW098106481A patent/TWI455220B/zh not_active IP Right Cessation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04280443A (ja) | 1990-09-27 | 1992-10-06 | Motorola Inc | 熱硬化可能な接着剤およびこれを用いた電気的コンポーネント組立体 |
JP2000244114A (ja) * | 1999-02-23 | 2000-09-08 | Matsushita Electric Works Ltd | ビルドアップ多層配線板の製造方法 |
JP2005209833A (ja) * | 2004-01-22 | 2005-08-04 | Sony Corp | 半導体装置の製造方法 |
JP2007059538A (ja) * | 2005-08-23 | 2007-03-08 | Denso Corp | バンプ接合体の製造方法 |
JP2007141963A (ja) * | 2005-11-15 | 2007-06-07 | Denso Corp | 基板の実装方法、及びその実装方法で実装された半導体装置 |
JP2007258508A (ja) * | 2006-03-24 | 2007-10-04 | Sumitomo Bakelite Co Ltd | 半導体用接着剤、これを用いた半導体装置および半導体装置の製造方法 |
WO2008023452A1 (fr) * | 2006-08-25 | 2008-02-28 | Sumitomo Bakelite Co., Ltd. | Bande adhésive, structure de jonction, et ensemble semi-conducteur |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011165879A (ja) * | 2010-02-09 | 2011-08-25 | Sumitomo Bakelite Co Ltd | 端子間の接続方法 |
JP2011187488A (ja) * | 2010-03-04 | 2011-09-22 | Sumitomo Bakelite Co Ltd | 導電接続材料の製造方法、端子間の接続方法、接続端子の形成方法、半導体装置および電子機器 |
US20210051803A1 (en) * | 2018-03-05 | 2021-02-18 | Heraeus Deutschland GmbH & Co. KG | Method for producing a sandwhich arrangement |
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